CN104576628B - A kind of novel white-light LED structure and preparation method thereof - Google Patents
A kind of novel white-light LED structure and preparation method thereof Download PDFInfo
- Publication number
- CN104576628B CN104576628B CN201310507360.6A CN201310507360A CN104576628B CN 104576628 B CN104576628 B CN 104576628B CN 201310507360 A CN201310507360 A CN 201310507360A CN 104576628 B CN104576628 B CN 104576628B
- Authority
- CN
- China
- Prior art keywords
- layer
- chip
- light led
- blue
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 46
- 230000003287 optical effect Effects 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000003292 glue Substances 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 7
- 229910002704 AlGaN Inorganic materials 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000010405 anode material Substances 0.000 claims description 8
- 239000010406 cathode material Substances 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims 1
- 238000005286 illumination Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000001228 spectrum Methods 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 description 20
- 238000000034 method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
The invention discloses a kind of novel white-light LED structure, including the blue-light LED chip and reddish yellow light LED chip for passing through glue bond, it is characterised in that：The blue chip includes substrate, the cushion grown successively on substrate, DBR layer, n-type semiconductor layer, luminescent layer, electronic barrier layer, p-type semiconductor material layer and transparent electrode layer；The reddish yellow optical chip includes substrate, the n-type semiconductor layer grown successively on substrate, luminescent layer, p-type semiconductor material layer and transparent electrode layer, and transparent electrode layer is provided with reflecting layer, while the preparation method for also describing the chip structure.The reddish yellow light that the present invention is sent by the blue light and reddish yellow optical chip that send blue chip carries out spectrum directly superposition to send white light, compared with existing White-light LED chip, without fluorescent material, illumination effect is good, improves LED energy conversion efficiencies and extends service life.
Description
Technical field
The present invention relates to LED chip technical field, especially a kind of novel white-light LED structure and preparation method thereof.
Background technology
Light emitting diode（Light emitting diodle, abbreviation LED）According to the chemical constitution of different luminescent materials and
Attribute, it is divided into inorganic LED（Commonly referred to as LED）And organic LED（Commonly referred to as OLEDs）.In 1993, blue gallium nitride
（GaN）LED technology is broken through, and realizes within 1996 inorganic LED white light emissions on this basis.Because white light LEDs have
Low voltage drive, all solid state, low-power consumption, it is long-acting reliable the advantages that, white light LED part illumination association area application study all
Receive academic and industrial circle great attention.Because white light LEDs are a kind of to meet the efficient of environmental protection and energy saving green illumination theory
Light source, therefore, the semiconductor illumination technique based on white light LEDs at present（Forth generation lighting engineering）Obtained in worldwide
Promotion and development energetically, is forming huge industry.White light LED part realizes that the mode of white light mainly has three kinds：1st,
Blue-light LED chip excites yellow fluorescent powder, and white light is obtained by compound；2nd, ultraviolet LED excites red, green, blue three primary colors fluorescent powder,
White light is obtained by compound；3rd, red, green, blue three-primary color LED multi-chip by integration packaging so as to obtaining white light.
Second of white light makes the red bluish-green three kinds of fluorescent material that need to select to match with ultraviolet wavelength, UV light sources, anti-UV
Encapsulating material, and the making of these three materials and exploitation are all more difficult, therefore second of white light is also less on the market.The third is white
Light preparation method is faced with mixed light difficulty, and user can observe a variety of different colors easily everywhere in front of this light source, together
When three kinds of light driving it is more complicated, occur the change of color under different electric currents, the third is also less in market.At present most
Commonly the first, i.e., in blue-light LED chip, just face coats one layer of yellow fluorescent powder and realizes the transmitting of white light, using the party
The fluorescent material paint-on technique that method is realized, not only production efficiency is not high, and big with the product colour temperature difference of batch.It must be made follow-up
Cheng Zhong, white light LEDs are fixed on cup centre and carry out die bond process, LED wafer die bond process due to equipment precision
Problem, it is impossible to ensure that wafer is bonded at the middle of cup, for the mixed layer coated with fluorescent material, because chip is not in centre,
Cause the optical path difference on both sides different so as to producing the inhomogeneities of color.
The content of the invention
In view of the shortcomings of the prior art, the present invention provides a kind of novel white-light LED structure and preparation method thereof, can be without glimmering
White light LEDs are realized in the case of light powder, to effectively improve chip light emitting efficiency and extend white light LEDs service life.
The technical scheme is that：A kind of novel white-light LED structure, including by the blue-light LED chip of glue bond and
Reddish yellow light LED chip, the blue chip include substrate, the cushion grown successively on substrate, DBR layer, n-type semiconductor material
The bed of material, luminescent layer, electronic barrier layer, p-type semiconductor material layer and transparent electrode layer；
In the blue chip, p-type semiconductor material layer is provided with anode, and n-type semiconductor layer is provided with negative electrode,
Cathode and anode is equipped with bonding wire, and cathode and anode material is the one or more in Ti, Ni, Au, Ag, Pt, Cr and Wu, bonding wire material
For the one or more in Cu, Al and Ag；
The DBR layer is made up of 2-15 cycle material layer, and each cycle material layer is by AlGaN, InGaN and GaN
Two kinds of material layer compositions, the thickness of each material layer is the refractive index of 1/4,1/8 or 1/16 divided by material of blue light wavelength, blue
DBR layer in optical chip has and prevents blue light from down launching and feux rouges can appear and from the effect of top-emission.
The reddish yellow optical chip includes substrate, the n-type semiconductor layer grown successively on substrate, luminescent layer, p-type half
Conductor material layer and transparent electrode layer；Transparent electrode layer is provided with reflecting layer, and reflecting layer is metallic reflector and/or dbr structure,
Dbr structure material is two kinds in AlGaN, InGaN and GaN, and the luminous energy of reddish yellow optical chip transmitting is by the reflection positioned at bottom
Layer be emitted back towards and from top-emission；
In the reddish yellow optical chip, p-type semiconductor material layer is provided with anode, and n-type semiconductor layer is provided with negative electrode,
Cathode and anode is equipped with bonding wire, and cathode and anode material is the one or more in Ti, Ni, Au, Ag, Pt, Cr and Wu, bonding wire material
For the one or more in Cu, Al and Ag；
The size of the reddish yellow optical chip is more than or equal to the size of blue chip, is combined together by gluing, and realizes
The transmitting of white light, the material of glue can be the one or more in organic silica gel, silver paste, heat-conducting glue, alloy weldering, and the thickness of glue is preferred
For 100nm-100 um, to reduce the absorption of reddish yellow light.
Preferably, the substrate in blue chip and reddish yellow optical chip is initial substrates, organic semiconductor device or surface coarsening lining
Bottom.
The cathode and anode of the reddish yellow optical chip and blue chip is located at the arranged on left and right sides of whole chip structure respectively, to subtract
The absorption of electrode pair light is lacked.
Preferably, the blue chip include Sapphire Substrate, GaN cushions, DBR layer, n-type GaN layer, by InGaN
With luminescent layer, AlGaN electronic barrier layers, p-type GaN layer and the ito transparent electrode layer of GaN material layer composition；The reddish yellow light core
Piece includes GaP substrates, n-type AlInGaN layers, the Al that emission wavelength is 560-600nmxInyGazP luminescent layers, p-type AlInGaN
Layer, ito transparent electrode layer and reflecting layer, wherein AlxInyGazIn P luminescent layers, preferably x and y molar fraction are 0.25-
0.5, x=y, z=1-x-y, luminescent layer can adjust the color of light by changing x, y and z size.
A kind of preparation method of novel white-light LED structure, blue chip use MOCVD (Metal- with reddish yellow optical chip
Organic Chemical Vapor Deposition) fabrication techniques, including following two steps：
1st, blue chip and reddish yellow optical chip are pasted by the glue that thickness is 100nm-100 um, the negative electrode of blue chip
It is located at homonymy or heteropleural with the negative electrode of reddish yellow optical chip；
2nd, directly it is packaged lead on the basis of above-mentioned bonding chip.
The lead of blue chip and the reddish yellow optical chip is in series or in parallel.
Beneficial effects of the present invention are：The substrate of blue chip is linked together by the substrate of glue and reddish yellow optical chip,
DBR layer is set in blue chip, DBR layer is located between active region and the buffering area of blue chip, and the blue light for being sent to bottom is whole
Reflect back and reddish yellow light can appear, reddish yellow optical chip bottom sets reflecting layer, will be sent to the reddish yellow light of bottom all reflection and
Projected from top, while the direct superposition of two kinds of spectrum is with regard to that can send white light.It is of the invention compared with existing White-light LED chip,
Without fluorescent material, illumination effect is good, improves LED energy conversion efficiencies and extends service life.
Brief description of the drawings
Fig. 1 is the diagrammatic cross-section of the embodiment of the present invention 1；
Fig. 2 is the front schematic view of the embodiment of the present invention 1；
Fig. 3 is the schematic bottom view of the embodiment of the present invention 1；
Fig. 4 is the diagrammatic cross-section of the embodiment of the present invention 2；
Fig. 5 is the front schematic view of the embodiment of the present invention 2；
Fig. 6 is the schematic bottom view of the embodiment of the present invention 2.
In figure, 1- glue, 2- Sapphire Substrates, 3- cushions, 4- DBR layers, 5-n type GaN layers, 6- luminescent layers（Blue light）, 7-
Electronic barrier layer, 8-p type GaN layers, 9- transparent electrode layers, 10- anodes（Blue light）, 11-GaP substrates, 12-n type AlInGaN layers,
13- luminescent layers（Reddish yellow light）, 14- p-type AlInGaN layers, 15- transparent electrode layers, 16- anodes（Reddish yellow light）, 17- negative electrodes（It is blue
Light）, 18- negative electrodes（Reddish yellow light）, 19- reflecting layer.
Embodiment
The embodiment of the present invention is described further below in conjunction with the accompanying drawings：
Embodiment 1：As Figure 1-3, a kind of novel white-light LED structure, including with heat-conducting glue（1）The blue-ray LED of bonding
Chip and reddish yellow light LED chip, wherein, blue chip includes Sapphire Substrate（2）, in Sapphire Substrate（2）On set successively
The GaN cushions put（3）, the DBR layer that is made up of AlGaN and GaN material layer（4）, n-type GaN layer（5）, by 2 cycle material layer groups
Into luminescent layer（6）, AlGaN electronic barrier layers（7）, p-type GaN layer（8）With ito transparent electrode layer（9）, wherein p-type GaN layer
（8）It is provided with anode（10）, n-type GaN layer（5）It is provided with negative electrode（17）, cathode and anode is equipped with bonding wire, and cathode and anode material is
Ag, bonding wire material are Cu；
Reddish yellow optical chip includes GaP substrates（11）, in GaP substrates（11）On the n-type AlInGaN layers that set gradually
（12）、Al0.3In0.3Ga0.4P luminescent layers（13）, p-type AlInGaN layers（14）, ito transparent electrode layer（15）And metallic reflector
（19）, wherein p-type AlInGaN layers（14）It is provided with anode（16）, n-type AlInGaN layers（12）It is provided with negative electrode（18）, yin, yang
Pole is equipped with bonding wire, and cathode and anode material is Ag, and bonding wire material is Cu；
In the present embodiment, the size of reddish yellow optical chip is equal to the size of blue chip, reddish yellow optical chip negative electrode（18）With indigo plant
Optical chip negative electrode（17）Positioned at homonymy.
The preparation method of embodiment 1 is corresponding blue chip and reddish yellow optical chip to be made using MOCVD technologies, then use
Thickness is 200 nm heat-conducting glue（1）Blue chip and reddish yellow optical chip are pasted, different stickup directions can make blue chip
Negative electrode（17）With the negative electrode of reddish yellow optical chip（18）Then it is homonymy, then above-mentioned in homonymy or heteropleural, the embodiment
Lead is directly packaged on the basis of bonding chip, the chip structure being formed in embodiment 1.
Embodiment 2：As Figure 4-Figure 6, a kind of novel white-light LED structure, including with organic silica gel（1）The blue light of bonding
LED chip and reddish yellow light LED chip, wherein, blue chip includes Sapphire Substrate（2）, in Sapphire Substrate（2）On successively
The GaN cushions of setting（3）, the DBR layer that is made up of AlGaN and GaN material layer（4）, n-type GaN layer（5）, by 12 cycle materials
The luminescent layer of layer composition（6）, AlGaN electronic barrier layers（7）, p-type GaN layer（8）With ito transparent electrode layer（9）, wherein p-type GaN
Layer（8）It is provided with anode（10）, n-type GaN layer（5）It is provided with negative electrode（17）, cathode and anode is equipped with bonding wire, and cathode and anode material is equal
For Ag, bonding wire material is Cu；
Reddish yellow optical chip includes GaP substrates（11）, in GaP substrates（11）On the n-type AlInGaN layers that set gradually
（12）、Al0.4In0.4Ga0.2P luminescent layers（13）, p-type AlInGaN layers（14）, ito transparent electrode layer（15）And metallic reflector
（19）, wherein p-type AlInGaN layers（14）It is provided with anode（16）, n-type AlInGaN layers（12）It is provided with negative electrode（18）, yin, yang
Pole is equipped with bonding wire, and cathode and anode material is Ag, and bonding wire material is Cu, in the present embodiment, GaP substrates（11）Right side is by part
Peel off so that the negative electrode of reddish yellow optical chip（18）Set upward, the convenient negative electrode with blue chip（17）Enter line lead；
In the present embodiment, the size of reddish yellow optical chip is more than the size of blue chip, and reddish yellow optical chip has more part and sent out
The luminous energy penetrated without directly launching inside blue chip, improves light extraction efficiency, reddish yellow optical chip negative electrode（18）With blue light
Chip negative electrode（17）Positioned at homonymy.
The preparation method of embodiment 2 is：Corresponding blue chip and reddish yellow optical chip is made using MOCVD technologies, then used
Thickness is 2000nm organic silica gel（1）Blue chip and reddish yellow optical chip are pasted, make blue light core by adjusting stickup direction
Piece negative electrode（17）With reddish yellow optical chip negative electrode（18）Positioned at homonymy, lead is directly packaged on this basis, is formed reality
Apply the chip structure in example 2.
Claims (7)
1. a kind of novel white-light LED structure, including existed by the blue-light LED chip and reddish yellow light LED chip, its feature of glue bond
In：The blue chip includes Sapphire Substrate, grows successively on a sapphire substrate GaN cushions, DBR layer, n-type
GaN layer, the luminescent layer being made up of InGaN and GaN material layer, AlGaN electronic barrier layers, p-type GaN layer and ito transparent electrode layer；
N-type AlInGaN layers, the emission wavelength 560- that the reddish yellow optical chip includes GaP substrates, grown successively on a gap substrate
600nm AlxInyGazP luminescent layers, p-type AlInGaN layers, ito transparent electrode layer and reflecting layer, wherein AlxInyGazP light
In layer, x and y molar fraction are 0.25-0.5, x=y, z=1-x-y.
2. novel white-light LED structure according to claim 1, it is characterised in that：The size of the reddish yellow optical chip is more than
Or the size equal to blue chip.
3. novel white-light LED structure according to claim 1, it is characterised in that：The DBR layer is by 2-15 cycle material
Layer composition, each cycle material layer are made up of two kinds of material layers in AlGaN, InGaN and GaN, the thickness of each material layer
For the 1/4 of blue light wavelength, 1/8 or 1/16 divided by the refractive index of material.
4. novel white-light LED structure according to claim 1, it is characterised in that：The reflecting layer be metallic reflector and/
Or dbr structure, dbr structure material are two kinds in AlGaN, InGaN and GaN.
5. novel white-light LED structure according to claim 1, it is characterised in that：The material of the glue is organic silica gel, silver
One or more in slurry, heat-conducting glue, alloy weldering, the thickness of glue is 100nm-100um.
6. novel white-light LED structure according to claim 1, it is characterised in that：In the blue chip, p-type semiconductor
Material layer is provided with anode, and n-type semiconductor layer is provided with negative electrode, and cathode and anode is equipped with bonding wire cathode and anode material and is
One or more in Ti, Ni, Au, Ag, Pt, Cr and Wu, bonding wire material are the one or more in Cu, Al and Ag.
7. novel white-light LED structure according to claim 1, it is characterised in that：In the reddish yellow optical chip, p-type is partly led
Body material layer is provided with anode, and n-type semiconductor layer is provided with negative electrode, and cathode and anode is equipped with bonding wire, and cathode and anode material is equal
For the one or more in Ti, Ni, Au, Ag, Pt, Cr and Wu, bonding wire material is the one or more in Cu, Al and Ag.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310507360.6A CN104576628B (en) | 2013-10-25 | 2013-10-25 | A kind of novel white-light LED structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310507360.6A CN104576628B (en) | 2013-10-25 | 2013-10-25 | A kind of novel white-light LED structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104576628A CN104576628A (en) | 2015-04-29 |
| CN104576628B true CN104576628B (en) | 2018-04-06 |
Family
ID=53092314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310507360.6A Expired - Fee Related CN104576628B (en) | 2013-10-25 | 2013-10-25 | A kind of novel white-light LED structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104576628B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950792A (en) * | 2019-03-29 | 2019-06-28 | 钟祥博谦信息科技有限公司 | The distributed bragg reflector mirror of gallium nitride and the preparation method of resonant cavity |
| GB2592017B (en) * | 2020-02-11 | 2022-08-03 | Plessey Semiconductors Ltd | Multicolour light emitting structure |
| CN111834505B (en) * | 2020-06-12 | 2022-04-08 | 福州大学 | Three-pole luminous tube based on wavelength down-conversion and manufacturing method thereof |
| CN113690268A (en) * | 2021-07-01 | 2021-11-23 | 河源市众拓光电科技有限公司 | Visible light communication cascade type array LED chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101180741A (en) * | 2005-04-05 | 2008-05-14 | 飞利浦拉米尔德斯照明设备有限责任公司 | A1lngap led having reduced temperature dependence |
| CN101740559A (en) * | 2009-12-18 | 2010-06-16 | 北京工业大学 | White-light emitting diode |
| CN102171847A (en) * | 2008-10-03 | 2011-08-31 | 港大科桥有限公司 | Semiconductor color-tunable broadband light sources and full-color microdisplays |
| CN102201507A (en) * | 2010-03-25 | 2011-09-28 | Lg伊诺特有限公司 | Light-emitting device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100634307B1 (en) * | 2005-08-10 | 2006-10-16 | 서울옵토디바이스주식회사 | Light-emitting device and method of manufacturing the same |
-
2013
- 2013-10-25 CN CN201310507360.6A patent/CN104576628B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101180741A (en) * | 2005-04-05 | 2008-05-14 | 飞利浦拉米尔德斯照明设备有限责任公司 | A1lngap led having reduced temperature dependence |
| CN102171847A (en) * | 2008-10-03 | 2011-08-31 | 港大科桥有限公司 | Semiconductor color-tunable broadband light sources and full-color microdisplays |
| CN101740559A (en) * | 2009-12-18 | 2010-06-16 | 北京工业大学 | White-light emitting diode |
| CN102201507A (en) * | 2010-03-25 | 2011-09-28 | Lg伊诺特有限公司 | Light-emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104576628A (en) | 2015-04-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI636589B (en) | Light emitting diode module and fabricating method thereof | |
| CN103094269B (en) | White light emitting device and preparation method thereof | |
| TWI414088B (en) | Light-emitting device and the manufacturing method thereof | |
| CN101582418B (en) | Tricolor single-chip white light-emitting diode regulated through electric injection | |
| US20130015461A1 (en) | Light-emitting Device Capable of Producing White Light And Light Mixing Method For Producing White Light With Same | |
| CN101839403A (en) | AC-driven light emitting device | |
| CN101540361B (en) | Preparation method of AlGaInP LED grown on silicon base | |
| CN104576628B (en) | A kind of novel white-light LED structure and preparation method thereof | |
| CN111326621A (en) | Flip Micro LED full-color quantum dot chip, and preparation method and application thereof | |
| CN101465398B (en) | preparation method of single electrode white light LED based on secondary substrate transfer technology | |
| CN106783821A (en) | The full-spectrum LED encapsulating structure and its method for packing of a kind of unstressed configuration powder | |
| CN105932127B (en) | Light emitting diode and preparation method thereof | |
| US9257614B2 (en) | Warm white LED with stacked wafers and fabrication method thereof | |
| CN101740559A (en) | White-light emitting diode | |
| WO2014040412A1 (en) | Led packaging structure | |
| TWM277111U (en) | Vertical electrode structure for white-light LED | |
| CN104576627B (en) | A kind of White LED with high color rendering property structure and preparation method thereof | |
| CN203607398U (en) | A highly color rendering white light LED structure | |
| CN203607399U (en) | A novel white light LED structure | |
| CN206401317U (en) | A kind of full-spectrum LED encapsulating structure of unstressed configuration powder | |
| TW201301570A (en) | Multi-color light emitting diode and manufacturing method thereof | |
| CN202712260U (en) | Plane structure white light led chip | |
| CN102130242A (en) | Single-color LED (light-emitting diode) chip and method for forming single-color LED chip | |
| CN108091734A (en) | Four color LED chip of vertical stratification based on GaN material and preparation method thereof | |
| CN203659932U (en) | Forward-installed LED chip without bonding wire |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180406 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |