CN203607398U - A highly color rendering white light LED structure - Google Patents
A highly color rendering white light LED structure Download PDFInfo
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- CN203607398U CN203607398U CN201320659828.9U CN201320659828U CN203607398U CN 203607398 U CN203607398 U CN 203607398U CN 201320659828 U CN201320659828 U CN 201320659828U CN 203607398 U CN203607398 U CN 203607398U
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Abstract
The utility model discloses a highly color rendering white light LED structure comprising a blue-light LED chip and a red-light LED chip which are bonded through adhesive. The highly color rendering white light LED structure is characterized in that the blue-light chip comprises a substrate and a buffer layer, a DBR layer, an n-type semi conducting material layer, a luminescent layer, an electronic barrier layer, a p-type semi conducting material layer and a transparent electrode layer which are sequentially grown on the substrate; and the transparent electrode layer in the blue-light chip is coated with yellow fluorescent powder; the red-light chip comprises a substrate and an n-type semi conducting material layer, a luminescent layer, a p-type semi conducting material layer and a transparent electrode layer which are sequentially grown on the substrate, and a reflecting layer is arranged on the transparent electrode layer. At the same time, the utility model introduces a method for manufacturing the chip structure. According to the utility model, blue lights and red lights are subjected to spectrum superposition and then yellow fluorescent powder on the top portion is excited to emit white lights; red lights absent in traditional white light LED spectrums are made up, so that LED color rendering indexes are raised; the LED luminescence efficiency is raised; and the usage life is prolonged.
Description
Technical field
The utility model relates to LED chip technical field, especially a kind of White LED with high color rendering property structure.
Background technology
Because white light LEDs has low voltage drive, all solid state, low-power consumption, the long-acting advantage such as reliable, white light LED part has all been subject to the great attention of academic and industrial circle in the application study of illumination association area.White light is to be mixed by multiple coloured light, generally has two kinds of methods can obtain white light: the one, and by blue light and yellow light mix, another is to be mixed by red-green-blue.According to the approach that produces white light, can be divided into three kinds of methods:
1, multi-chip is combined: utilize multiple semiconductor chips to launch respectively red, green, blue, be combined into white light.This method color rendering index (Color Rendering Index, CRI) very high (>95).But because the chip using is more, production cost is high, and due to the LED quantum efficiency difference of three kinds of colors, along with the variation of temperature and drive current is inconsistent, along with the rate of decay of time is not identical yet, can cause the unstable of color, need that three kinds of colors are added respectively to feedback circuit for this reason and compensate, cause circuit complexity, can bring 10 ~ 15% loss in efficiency simultaneously.
2, fluorescent conversion type (phosphor-converted): under the exciting of low-voltage DC, the fluorescent material that the optical excitation of semiconductor chip transmitting is coated on chip sends long wavelength's visible ray, and is combined into white light.Can be divided into two classes according to the difference of chip:
(1) blue-light excited type: take blue-light LED chip as basic light source, excite yellow inorganic fluorescent powder or yellow organic fluorescent dye transmitting gold-tinted, both obtain white light at combination.The advantage of this method is simple in structure, and manufacture craft requires relatively lower, and gold-tinted fluorescent material YAG applies for many years in field of fluorescent lamps, manufacture craft comparative maturity.It is general also not high that shortcoming is mainly to lack red light portion color rendering index.
(2) ultraviolet excitation type: excite red, green, blue three-color phosphor with the near ultraviolet LED of high brightness, produce three primary colors light, combination obtains white light.Because color is only determined by the proportioning of fluorescent material, this method easily obtains the white light of solid colour, and color rendering index is also very high.Shortcoming is mainly that high-power near ultraviolet LED is not easy to make, and encapsulating material is easily aging under the irradiation of ultraviolet light, the lost of life; The potential safety hazard that exists ultraviolet ray to reveal.
3, single-chip Multiple Quantum Well type: same semiconductor chip inside exists multiple forbidden bands energy level, launches the visible ray of multiple color simultaneously and is combined into white light when electricity excites.Current this method is also at the experimental stage.This can find out, in current and expected future a period of time, and the main flow that the white light LEDs of fluorescent conversion type is market development.
Summary of the invention
For the deficiencies in the prior art, the utility model provides a kind of White LED with high color rendering property structure, can effectively improve the color rendering index of white light LEDs, strengthens the luminous efficiency of chip and extends white light LEDs useful life.
The technical solution of the utility model is: a kind of White LED with high color rendering property structure, comprise blue-light LED chip and red LED chip by glue bond, resilient coating, DBR layer, N-shaped semiconductor material layer, luminescent layer, electronic barrier layer, p-type semiconductor material layer and transparent electrode layer that described blue chip comprises substrate, on substrate, grows successively, be coated with yellow fluorescent powder on the transparent electrode layer in blue chip;
Preferably, on the transparent electrode layer in described blue chip, be coated with silica gel and the yttrium-aluminium-garnet mixture of (yttrium aluminum garnet is called for short YAG).
In described blue chip, p-type semiconductor material layer is provided with anode, and N-shaped semiconductor material layer is provided with negative electrode, and cathode and anode is equipped with bonding wire, cathode and anode material is one or more in Ti, Ni, Au, Ag, Pt, Cr and Wu, and bonding wire material is one or more in Cu, Al and Ag;
Described DBR layer is made up of 2-15 cycle material layer, each cycle material layer is made up of the bi-material layer in AlGaN, InGaN and GaN, the thickness of each material layer is 1/4,1/8 or 1/16 refractive index divided by material of blue light wavelength, and the DBR layer in blue chip has can not down launch blue light and ruddiness can appear and from the effect of top-emission.
N-shaped semiconductor material layer, luminescent layer, p-type semiconductor material layer and transparent electrode layer that described red light chips comprises substrate, on substrate, grows successively; Transparent electrode layer is provided with reflector, and reflector is metallic reflector and/or dbr structure, and dbr structure material is two kinds in AlGaN, InGaN and GaN, and this reflector that the luminous energy of red light chips transmitting is positioned at bottom is penetrated back and from top-emission;
In described red light chips, p-type semiconductor material layer is provided with anode, and N-shaped semiconductor material layer is provided with negative electrode, and cathode and anode is equipped with bonding wire, cathode and anode material is one or more in Ti, Ni, Au, Ag, Pt, Cr and Wu, and bonding wire material is one or more in Cu, Al and Ag;
The size of described red light chips equals the size of blue chip, be combined together by gluing, and realize the transmitting of white light, the material of glue can be one or more in organic silica gel, silver-colored slurry, heat-conducting glue, gold alloy solder, the thickness of glue is preferably 100nm-100 um, to reduce the absorption of ruddiness.
Preferably, the substrate in blue chip and red light chips is initial substrates, attenuate substrate or surface coarsening substrate.
The cathode and anode of described red light chips and blue chip lays respectively at the arranged on left and right sides of whole chip structure, to have reduced the absorption of electrode pair light.
Preferably, luminescent layer, AlGaN electronic barrier layer, p-type GaN layer and ito transparent electrode layer that described blue chip includes Sapphire Substrate, GaN resilient coating, DBR layer, N-shaped GaN layer, is made up of InGaN and GaN material layer, wherein the material of DBR layer is two kinds in AlGaN, InGaN and GaN; Described red light chips includes the Al that GaP substrate, N-shaped AlInGaN, emission wavelength are 600-650nm
xin
yga
zp luminescent layer, p-type AlInGaN layer, ITO transparency conducting layer and reflector, wherein Al
xin
yga
zin P luminescent layer, the molar fraction of x and y is 0-0.25, x=y, and z=1-x-y, luminescent layer is by the color of the adjustable light of size of change x, y and z.
A manufacture method for White LED with high color rendering property structure, blue chip and red light chips all adopt MOCVD (Metal-organic Chemical Vapor Deposition) fabrication techniques, comprise following two steps:
1, the glue that is 100nm-100 um by thickness is pasted blue chip and red light chips, and the negative electrode of blue chip and the negative electrode of red light chips are positioned at homonymy or heteropleural;
2, on the basis of above-mentioned bonding chip, encapsulate yellow fluorescent powder.
The lead-in wire of described blue chip and red light chips is series connection or in parallel.
The beneficial effects of the utility model are: together with the substrate of blue chip passes through glue bond with the substrate of red light chips, in between the active region of blue chip and buffering area, establish DBR layer, the blue light that mails to bottom is all reflected back and ruddiness can appear, reflector is established in red light chips bottom, the ruddiness that mails to bottom is all reflected and penetrated from blue chip top, after two kinds of spectrum stacks, excite the yellow fluorescent powder at blue chip top, thereby send white light.The utility model, compared with existing White-light LED chip, has made up the ruddiness lacking in conventional white light LED spectrum, has improved LED color rendering index, has strengthened the luminous efficiency of LED and has extended useful life.
Accompanying drawing explanation
Fig. 1 is the generalized section of the utility model embodiment.
Fig. 2 is the front schematic view of the utility model embodiment.
Fig. 3 is the schematic bottom view of the utility model embodiment.
In figure, 1-glue, 2-Sapphire Substrate, 3-resilient coating, 4-DBR layer, 5-n type GaN layer, 6-luminescent layer (blue light), 7-electronic barrier layer, 8-p type GaN layer, 9-transparent electrode layer, 10-anode (blue light), 11-GaP substrate, 12-n type AlInGaN layer, 13-luminescent layer (ruddiness), 14-p-type AlInGaN layer, 15-transparent electrode layer, 16-anode (ruddiness), 17-negative electrode (blue light), 18-negative electrode (ruddiness), 19-reflector.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described further:
As Figure 1-3, a kind of White LED with high color rendering property structure, comprise with bonding blue-light LED chip and the red LED chip of heat-conducting glue (1), wherein, blue chip includes Sapphire Substrate (2), the GaN resilient coating (3) setting gradually in Sapphire Substrate (2), the DBR layer (4) being formed by 2 cycle material layers, N-shaped GaN layer (5), the luminescent layer (6) being formed by InGaN and GaN material layer, AlGaN electronic barrier layer (7), p-type GaN layer (8) and ito transparent electrode layer (9), on ito transparent electrode layer (9), be coated with the mixture of silica gel and yttrium-aluminium-garnet, wherein p-type GaN layer (8) is provided with anode (10), N-shaped GaN layer (5) is provided with negative electrode (17), cloudy, anode is equipped with bonding wire, cloudy, anode material is Ag, bonding wire material is Cu,
Red light chips includes GaP substrate (11), the N-shaped AlInGaN layer (12) setting gradually on GaP substrate (11), AlInGaP luminescent layer (13), p-type AlInGaN layer (14), ito transparent electrode layer (15) and the metallic reflector (19) that emission wavelength is 602nm, wherein p-type AlInGaN layer (14) is provided with anode (16), N-shaped AlInGaN layer (12) is provided with negative electrode (18), cathode and anode is equipped with bonding wire, cathode and anode material is Ag, and bonding wire material is Cu; The size of red light chips and the size of blue chip are equal, and red light chips negative electrode (18) is positioned at homonymy with blue chip negative electrode (17).
The manufacture method of this embodiment is, adopt MOCVD technology to make corresponding blue chip and red light chips, with the heat-conducting glue (1) that thickness is 1000 nm, blue chip and red light chips are pasted again, selecting to paste direction makes the negative electrode (17) of blue chip and the negative electrode (18) of red light chips be positioned at homonymy, directly encapsulate on this basis yellow fluorescent powder, just formed required White LED with high color rendering property structure.
Claims (7)
1. a White LED with high color rendering property structure, comprise blue-light LED chip and red LED chip by glue bond, it is characterized in that: resilient coating, DBR layer, N-shaped semiconductor material layer, luminescent layer, electronic barrier layer, p-type semiconductor material layer and transparent electrode layer that described blue chip comprises substrate, on substrate, grows successively, be coated with yellow fluorescent powder on the transparent electrode layer in blue chip; N-shaped semiconductor material layer, luminescent layer, p-type semiconductor material layer and transparent electrode layer that described red light chips comprises substrate, on substrate, grows successively, transparent electrode layer is provided with reflector.
2. White LED with high color rendering property structure according to claim 1, is characterized in that: the mixture that is coated with silica gel and yttrium-aluminium-garnet on the transparent electrode layer in described blue chip.
3. White LED with high color rendering property structure according to claim 1, is characterized in that: luminescent layer, AlGaN electronic barrier layer, p-type GaN layer and ito transparent electrode layer that described blue chip includes Sapphire Substrate, GaN resilient coating, DBR layer, N-shaped GaN layer, is made up of InGaN and GaN material layer.
4. White LED with high color rendering property structure according to claim 1, is characterized in that: described red light chips includes the Al that GaP substrate, N-shaped AlInGaN, emission wavelength are 600-650nm
xin
yga
zp luminescent layer, p-type AlInGaN layer, ITO transparency conducting layer and reflector, wherein Al
xin
yga
zin P luminescent layer, the molar fraction of x and y is 0-0.25, x=y, z=1-x-y.
5. White LED with high color rendering property structure according to claim 1, is characterized in that: the size of described red light chips equals the size of blue chip.
6. according to the White LED with high color rendering property structure described in claim 1 or 3, it is characterized in that: described DBR layer is made up of 2-15 cycle material layer, each cycle material layer is made up of the bi-material layer in AlGaN, InGaN and GaN, 1/4,1/8 or 1/16 refractive index divided by material that the thickness of each material layer is blue light wavelength.
7. White LED with high color rendering property structure according to claim 1, is characterized in that: the material of described glue is one or more in organic silica gel, silver-colored slurry, heat-conducting glue, gold alloy solder, and the thickness of glue is 100nm-100um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320659828.9U CN203607398U (en) | 2013-10-25 | 2013-10-25 | A highly color rendering white light LED structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320659828.9U CN203607398U (en) | 2013-10-25 | 2013-10-25 | A highly color rendering white light LED structure |
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| CN203607398U true CN203607398U (en) | 2014-05-21 |
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| CN201320659828.9U Expired - Fee Related CN203607398U (en) | 2013-10-25 | 2013-10-25 | A highly color rendering white light LED structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538516A (en) * | 2015-01-12 | 2015-04-22 | 天津三安光电有限公司 | AlGaInP-series light emitting diode device |
| CN107591467A (en) * | 2017-09-08 | 2018-01-16 | 宁波高新区斯汀环保科技有限公司 | A kind of multifunctional intellectual display screen LED materials and its manufacture method |
| WO2020135303A1 (en) * | 2018-12-26 | 2020-07-02 | 深圳光峰科技股份有限公司 | Light-emitting device with high red light brightness and high reliability |
-
2013
- 2013-10-25 CN CN201320659828.9U patent/CN203607398U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538516A (en) * | 2015-01-12 | 2015-04-22 | 天津三安光电有限公司 | AlGaInP-series light emitting diode device |
| CN104538516B (en) * | 2015-01-12 | 2017-07-14 | 天津三安光电有限公司 | AlGaInP series LED devices |
| CN107591467A (en) * | 2017-09-08 | 2018-01-16 | 宁波高新区斯汀环保科技有限公司 | A kind of multifunctional intellectual display screen LED materials and its manufacture method |
| CN107591467B (en) * | 2017-09-08 | 2019-02-22 | 宁波高新区斯汀环保科技有限公司 | A kind of multifunctional intellectual display screen LED material and its manufacturing method |
| WO2020135303A1 (en) * | 2018-12-26 | 2020-07-02 | 深圳光峰科技股份有限公司 | Light-emitting device with high red light brightness and high reliability |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140521 Termination date: 20171025 |