CN100411211C - Monolithic integrated white light diode - Google Patents
Monolithic integrated white light diode Download PDFInfo
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- CN100411211C CN100411211C CNB2006101247308A CN200610124730A CN100411211C CN 100411211 C CN100411211 C CN 100411211C CN B2006101247308 A CNB2006101247308 A CN B2006101247308A CN 200610124730 A CN200610124730 A CN 200610124730A CN 100411211 C CN100411211 C CN 100411211C
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Abstract
This invention relates to a single-chip integrated white light LED with type-P electrode and type-N electrode on the surface, a distributive Bragg reflector, a substrate, a buffer layer, a first cladding, a first active region, a first upper cladding, a photon crystal layer, a second lower cladding, a second active region, a second upper cladding, a P type cladding and a P type ohm contact layer are set upwards from the bottom in it, in which, a first optical feedback cavity is composed of the distributive Bragg reflector and the top surface of the single-chip integrated white light LED, a second cavity is composed of the photon crystal layer and the top surface of the single-chip integrated white LED, lights emitted by the two active regions are compensated mutually, so it can emit white light directly not needing light conversion of fluorescent powder.
Description
Technical field
The present invention relates to the monolithic integrated white light light-emitting diode of a kind of specular quality, high-luminous-efficiency.
Background technology
Semiconductor illuminating light source based on white light emitting diode (LED) has advantage energy-efficient, environmental protection, is expected to become electric light source of new generation and enters huge numbers of families, has very tempting application prospect.Realize that at present the semiconductor white light source mainly concentrates on three kinds of methods: first kind is that red, green, blue LED hybrid package obtains white light, and complicated drive circuit and feedback control system must be arranged; Second kind is coating gold-tinted fluorescent material on blue-light LED chip, and blue-light excited fluorescent material sends gold-tinted, and blue light and yellow light mix obtain white light; The third is to apply three primary colors fluorescent powder on ultraviolet (perhaps purple light) led chip, and ultraviolet light (perhaps purple light) excitated fluorescent powder sends red, green, blue, and three's mixing obtains white light.Second all requires to increase fluorescent powder coating technique in the LED packaging process with the third method, not only increased device cost, and the performance of white light LEDs can be subjected to the influence of fluorescent material performance degradation, especially in the LED of high brightness power-type, the degeneration of fluorescent material will aggravate, and seriously threaten the stability and the life-span of device.Because above-mentioned three kinds of methods that realize the semiconductor white light sources respectively have shortcoming, so people wish to develop monolithic integrated white light LED, and the light transformation that need not fluorescent material just can directly obtain white light.
In order to obtain white light emission in monolithic integrated LED, its inside must have a plurality of smooth emitter region of corresponding different wave length, such as: blue emission district+yellow emission district, red emission district+green emission zones+blue emission district.For nitride luminescent material,, must adopt the In of high In ingredient in order to obtain gold-tinted (perhaps ruddiness) emission
xGa
1-xN or In
xGa
yAl
1-x-yThe N material.Because the lattice constant of InN and GaN and the difference of heat chemistry constant are bigger, so the In of high In ingredient
xGa
1-xN material growth comparatively difficulty (list of references: I-hsiu Ho and G.B.Stringfellow, Solid phaseimmiscibility in GaInN.Applied Physics Letters.69 (18), 1996, p2701).This just causes the of poor quality of epitaxial crystal, and defective, dislocation are many, and optical loss increases, and causes the luminous efficiency of gold-tinted or ruddiness very low.And In
xGa
1-xThe internal electric field of introducing owing to piezoelectric polarization and spontaneous polarization effect between the N/GaN interface also can make the very low (list of references: D.Xiao of luminous efficiency of gold-tinted or ruddiness, K.W.Kim, et al..Design of white light-emittingdiodes using InGaN/AlInGaN quantum-well structures.Applied Physics Letters.84 (52), 2004, p672.).Such as, at present the green light LED luminous efficiency of 550nm has surpassed 25 lumens/watt, and the yellow InGaN of commercial use (wavelength is 590nm) has been though LED has developed, and its luminous efficiency but has only 4 lumens/watt.More long wavelength's ruddiness InGaN/GaN LED then still is in laboratory stage, its luminous efficiency BELAND light for InGaN/GaN LED will hang down two orders of magnitude (list of references: B.Damilano, et al.InGaN/GaN quantum wellsgrown by molecular beam epitaxy emitting at 300 K in the whole visible spectrum.MaterialsScience and Engineering B82 (2001) 224-226.).Make that just because of material epitaxy growth difficulty and internal electric field effect the internal quantum efficiency of longer wavelength light is very little, so in the monolithic integrated white light LED of (blue light+gold-tinted), gold-tinted shared power proportions in synthetic light is too little, the chromaticity poor quality who causes synthesize white light, even it is far to depart from the white light color, and this just is difficult to obtain high-quality white light outgoing.This obviously can not satisfy the demand of illumination, because the illumination white light source must have chromaticity quality preferably, has higher color rendering index, can reproduce the true colors of object better.
Except photochromic poor quality, in monolithic integrated white light LED, the photon of shorter wavelength also will face the luminous efficiency that is absorbed by the longer wavelength light-emitting zone again and cause and reduce problem.Such as in the monolithic integrated white light LED of (blue light+gold-tinted), in a single day short blue photons of wavelength enters into the long Yellow light emitting district of wavelength, will meet with strong intrinsic and absorb, thereby reduce luminous efficiency.Though can take the short-wave long light-emitting district to reduce this harm in the scheme of following (away from exiting surface) in last (near exiting surface), long emission wavelength district, but owing to be emitted as the master with spontaneous among the LED, the probability of all directions ballistic phonon is identical, so still have the short wavelength photons of a great deal of downward emission to be sponged, thereby reduced luminous efficiency by following long emission wavelength district.
Summary of the invention
Technical problem to be solved by this invention is: a kind of monolithic integrated white light diode is provided, it not only can eliminate the adverse effect of the too little dialogue light color of long wavelength light power, can also solve short wavelength photons by the problem that the long emission wavelength district is absorbed, have good white light quality, high color rendering index (CRI) and big luminous efficiency.
The technical scheme that the present invention solves its technical problem employing is: its surface is provided with P type electrode and N type electrode; Its inside has distributed Bragg reflector, substrate, resilient coating, first under-clad layer, first active area, first top covering, layer of photonic crystals, second under-clad layer, second active area, second top covering, P type covering and P type ohmic contact layer from lower to upper successively, wherein, the dominant wavelength of the first active area emission spectrum is longer, the dominant wavelength of the second active area emission spectrum is shorter, the light that two active areas send is complementary colours, is white light after the mixing.Constitute first optical feedback cavity by distributed Bragg reflector and monolithic integrated white light LED upper surface, constitute second optical feedback cavity by layer of photonic crystals and monolithic integrated white light LED upper surface.
The present invention compared with prior art has following major advantage:
Therefore 1. have glow color two active areas of complementary color (such as first active area is gold-tinted, and second active area is a blue light) each other, no longer need to apply fluorescent material, can directly obtain white light after the light that two active areas send mixes.
2. two optical feedback cavities provide the bulk of optical feedback amplification for the light of shorter wavelength and the light of longer wavelength, significantly improve the luminous efficiency and the luminous power of these two kinds of light, thereby improve the luminous efficiency and the luminous power of entire device.
3. two optical feedback cavities are separate, can allow the light of longer wavelength obtain stronger light feedback effect, improve its luminous efficiency and luminous power, thereby improve the power proportions of light in synthesize white light of longer wavelength, improve the chromaticity quality and the color rendering index of synthesize white light.
4. layer of photonic crystals can stop the light of shorter wavelength to enter into the light-emitting zone of longer wavelength light effectively, solves the short wavelength photons that exists among the monolithic integrated white light LED effectively by the resorbent problem in long emission wavelength district, thereby improves luminous efficiency.
Description of drawings
Fig. 1 is the structural representation of one embodiment of the invention.
Embodiment
The invention will be further described below in conjunction with embodiment and accompanying drawing.
Monolithic integrated white light LED provided by the invention is provided with layer of photonic crystals 6 and two optical feedback cavities.
The concrete structure of monolithic integrated white light LED is as shown in the figure: its surface is provided with P type electrode 12 and N type electrode 13, and its inside has distributed Bragg reflector 14, substrate 1, resilient coating 2, first under-clad layer 3, first active area 4, first top covering 5, layer of photonic crystals 6, second under-clad layer 7, second active area 8, second top covering 9, P type covering 10, P type ohmic contact layer 11 from lower to upper successively.In two optical feedback cavities, first optical feedback cavity 17 is made of distributed Bragg reflector 14 and monolithic integrated white light LED upper surface, and the light that first active area sends obtains the bulk of optical feedback booster action in this feedback cavity; Second optical feedback cavity 16 is made of layer of photonic crystals 6 and monolithic integrated white light LED upper surface, and the light that second active area sends obtains the bulk of optical feedback booster action in this feedback cavity.
Described first active area 4 is away from exiting surface (side of white light 15 is an exiting surface among the figure), and the dominant wavelength of its emission spectrum is grown (for example gold-tinted); Second active area 8 is near exiting surface, and the dominant wavelength of its emission spectrum is lacked (for example blue light).The light that two active areas send is complementary colours, is white light 15 after the mixing; For example blue light and gold-tinted are complementary colours, and it is white light after mixing.These two active areas can perhaps be made by the mixture of quantum dot and quantum well by a kind of the making in Multiple Quantum Well, body material, quantum dot, the quantum wire, are perhaps made by the mixture of quantum dot and quantum wire.
By first active area 4 and second active area 8 that Multiple Quantum Well is made, its structure is: be trap with InGaN, AlInGaN is for building; Perhaps be trap with InGaN, GaN is for building; Perhaps, can select other material preparation trap, base for use according to actual needs.Any two kinds of first and second active areas of complementary color each other, the light of two kinds of colors that it sends can obtain white light after mixing.
Described substrate 1 can be by a kind of the making in the materials such as sapphire, gallium nitride (GaN), carborundum, zinc oxide, spinelle, silicon.
Described resilient coating 2 can be by a kind of the making among N type GaN, N type AlN, N type InGaN, N type AlGaN, the N type AlInGaN.Described distributed Bragg reflector 14 can be made by optical coating technology, such as, adopt by TiO
2/ SiO
2Perhaps HfO
2/ SiO
2Structure Deng dielectric material constitutes perhaps adopts other two kinds or more of structures with dielectric materials formation of different refractivity according to actual needs; Perhaps adopt the mixed structure that constitutes by metal (such as Ag, Al) and dielectric material.
In the present embodiment, P type electrode 12 and N type electrode 13 all are the same one sides (exiting surface) that is produced on LED.Also can they be produced on the not coplanar of LED according to actual needs, exiting surface, the N type electrode 13 that is positioned at LED such as, P type electrode 12 be positioned at distributed Bragg reflector 14 below.
Described layer of photonic crystals 6 is a kind of by the 1-D photon crystal layer that InGaN and GaN constituted, perhaps by 1-D photon crystal layer that AlGaN and InGaN constituted; Can also be that a kind of two dimension or three-dimensional photonic crystal constituted by above-mentioned material constitutes.Perhaps one dimension, two dimension or the three-dimensional photonic crystal that adopts other semi-conducting material to constitute according to actual needs constitutes.
Layer of photonic crystals 6 has dual-use function: first, the function that it has " stop blue light by, saturating gold-tinted ", the blue light that the high reflectance (up to more than 90%) that blue light is provided can stop blue light active area (second active area 8) to produce effectively enters following gold-tinted active area (first active area 4), and the long gold-tinted of wavelength is provided up to the transmitance more than 90%, thereby solved the existing short wavelength photons of common monolithic integrated white light LED effectively by the resorbent problem in long emission wavelength district; Second, layer of photonic crystals 6 conducts feedback cavity face have down made up blue light feedback cavity (second optical feedback cavity 16), the last feedback cavity face of blue light feedback cavity is at the exiting surface of device, because the refractive index difference of semiconductor device and extraneous air can provide about reflectivity of about 20%.Blue light feedback cavity (second optical feedback cavity 16) provides certain light feedback amplification to the blue photons of spontaneous emission, helps improving the luminous efficiency of blue light.
On the Sapphire Substrate 1 of polishing attenuate, the 14 pairs of gold-tinteds of distributed Bragg reflector that form by optical coating technology have higher reflectivity (more than 90%), its is as following feedback cavity face, has constituted the feedback cavity 17 of gold-tinted with exiting surface (going up the feedback cavity face).Gold-tinted feedback cavity 17 has double effects: on the one hand, the light feedback amplification that it provides gold-tinted helps improving the luminous efficiency of gold-tinted; On the other hand, make it provide stronger light feedback effect by optimal design to gold-tinted, to strengthen gold-tinted shared ratio in synthesize white light power, solve because the adverse effect that causes of the less dialogue light color of gold-tinted internal quantum efficiency, thereby obtain the white light of high color rendering index (CRI).
In addition, other parts can adopt routine techniques among the present invention, for example:
Described first under-clad layer 3, second under-clad layer 7 can adopt a kind of formation among N type GaN, N type AlGaN, the N type AlInGaN, also can be that a kind of among the GaN, the AlGaN that do not carry out any doping or the AlInGaN constitutes; Perhaps adopt other materials to constitute according to actual needs.
Described first top covering 5, second top covering 9 can adopt a kind of formation among P type GaN, P type AlGaN, the P type AlInGaN, also can be that a kind of among the GaN, the AlGaN that do not carry out any doping or the AlInGaN constitutes; Perhaps adopt other materials to constitute according to actual needs.
Described P type covering 10 can be P type GaN or adopt other different semiconductor material structures to constitute according to actual needs, such as the superlattice structure that is made of P type GaN, P type AlGaN.
Described P type ohmic contact layer 11 is to be made of P type GaN layer, perhaps adopts other different semi-conducting material to constitute according to actual needs.
Described P type electrode 12 adopts other different materials to be constituted by Ni/Ag alloy or Cr/Au alloy or according to actual needs.
Described N type electrode 13 adopts other different materials to be constituted by Ti/Al alloy or Cr/Au alloy or according to actual needs.
In sum, because the present invention has adopted the active area of two glow color complementations, and introduce the photonic crystal layer building two optical feedback cavities provide different light feedback effects to two kinds of color of light, so this single chip integrated white light LEDs need not the light transformation of fluorescent material with regard to the direct outgoing white light of energy, it not only can eliminate the adverse effect of the too little dialogue light color of long wavelength light power, can also solve the problem that short wavelength photons is absorbed by the long emission wavelength district, has good white light quality, the advantage of high color rendering index (CRI) and big luminous efficiency.
Sketch the course of work of the present invention below in conjunction with accompanying drawing:
(1) after this diode is by P type electrode 12 and N type electrode 13 injection currents, electronics in first active area 4 and hole radiation recombination produce the long gold-tinted photon of wavelength; And electronics in second active area 8 and hole radiation recombination produce the short blue photons of wavelength.
(2) because layer of photonic crystals has the function of " stop blue light by, saturating gold-tinted ", the blue light that the high reflectance that it provides blue light (up to more than 90%) can stop blue light active area (second active area 8) to produce effectively enters following gold-tinted active area (first active area 4), thereby solves the problem that short wavelength photons is absorbed by long wavelength's active area effectively.And the blue light feedback cavity (second optical feedback cavity 16) that is made of layer of photonic crystals and LED upper surface provides certain light feedback amplification to the blue photons of spontaneous emission, has improved the luminous efficiency and the luminous power of blue light.Because 6 pairs of blue lights of layer of photonic crystals have higher reflectivity (more than 90%), last, the blue light that obtains amplifying is from the outgoing of LED upper surface.
(3) because layer of photonic crystals has the function of " stop blue light by, saturating gold-tinted ", the gold-tinted that the high transmittance that it provides gold-tinted (up to more than 90%) can allow gold-tinted active area (first active area 4) produce efficiently passes through, and obtains the bulk of optical feedback booster action in the gold-tinted feedback cavity that is made of distributed Bragg reflector and monolithic integrated white light LED upper surface (first optical feedback cavity 17).Because 14 pairs of gold-tinteds of distributed Bragg reflector have higher reflectivity (more than 90%), last, the gold-tinted that obtains amplifying is with the upper surface outgoing of the overwhelming majority from LED.
(4) from the blue light and the yellow light mix of the upper surface outgoing of LED, form white light.
Claims (6)
1. monolithic integrated white light diode, its surface is provided with P type electrode (12) and N type electrode (13), its inside has distributed Bragg reflector (14) from lower to upper successively, substrate (1), resilient coating (2), first under-clad layer (3), first active area (4), first top covering (5), second under-clad layer (7), second active area (8), second top covering (9), P type covering (10), P type ohmic contact layer (11), it is characterized in that: the dominant wavelength of first active area (4) emission spectrum is longer, the dominant wavelength of second active area (8) emission spectrum is shorter, the light that two active areas send is complementary colours, is white light after the mixing; And, be provided with layer of photonic crystals (6) and two optical feedback cavities, layer of photonic crystals is between first top covering and second under-clad layer, first optical feedback cavity (17) is made of distributed Bragg reflector and monolithic integrated white light diode upper surface, and second optical feedback cavity (16) is made of layer of photonic crystals and monolithic integrated white light diode upper surface.
2. monolithic integrated white light diode according to claim 1, it is characterized in that: first active area (4) and second active area (8) are by a kind of the making in Multiple Quantum Well, body material, quantum dot, the quantum wire, perhaps make, perhaps make by the mixture of quantum dot and quantum wire by the mixture of quantum dot and quantum well.
3. monolithic integrated white light diode according to claim 1 is characterized in that: layer of photonic crystals (6) is made of one dimension, two dimension or three-dimensional photonic crystal.
4. monolithic integrated white light diode according to claim 1 is characterized in that: described substrate (1) is by a kind of the making in sapphire, gallium nitride, carborundum, zinc oxide, spinelle, the silicon.
5. monolithic integrated white light diode according to claim 1 is characterized in that: described resilient coating (2) is by a kind of the making among N type GaN, N type AlN, N type InGaN, N type AlGaN, the N type AlInGaN.
6. monolithic integrated white light diode according to claim 1, it is characterized in that: distributed Bragg reflector (14) is made by optical coating technology, it adopts the two kinds or more of dielectric materials of different refractivity to constitute, and perhaps adopts the mixed structure that is made of metal and dielectric material.
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| CNB2006101247308A CN100411211C (en) | 2006-10-10 | 2006-10-10 | Monolithic integrated white light diode |
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|---|---|---|---|
| CNB2006101247308A CN100411211C (en) | 2006-10-10 | 2006-10-10 | Monolithic integrated white light diode |
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| CN1933198A CN1933198A (en) | 2007-03-21 |
| CN100411211C true CN100411211C (en) | 2008-08-13 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102522469B (en) * | 2011-12-13 | 2014-06-11 | 内蒙古华延芯光科技有限公司 | ZnO substrate epitaxy structure, manufacture method thereof and ZnO substrate chip structure |
| CN103779450A (en) * | 2012-10-17 | 2014-05-07 | 甘志银 | Integration method for increasing luminous power of LED |
| US11424393B2 (en) | 2019-04-19 | 2022-08-23 | Kaistar Lighting (Xiamen) Co., Ltd. | Light-emitting diode and light-emitting module |
| CN111834498B (en) | 2019-04-19 | 2022-01-25 | 开发晶照明（厦门）有限公司 | Epitaxial light-emitting structure of light-emitting diode |
| CN115663080A (en) * | 2020-05-22 | 2023-01-31 | 开发晶照明（厦门）有限公司 | Light emitting diode |
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| JP2004281929A (en) * | 2003-03-18 | 2004-10-07 | Canare Electric Co Ltd | Resonator type light emitting diode |
| JP2004356438A (en) * | 2003-05-29 | 2004-12-16 | Hamamatsu Photonics Kk | Semiconductor light emitting element |
| CN1619846A (en) * | 2004-02-26 | 2005-05-25 | 金芃 | Power type high brightness white light combined semiconductor LED chip and technique of batch production |
| CN1641413A (en) * | 2004-01-16 | 2005-07-20 | 汉欣企业有限公司 | One-dimensional photon crystal and its light emitting device |
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2006
- 2006-10-10 CN CNB2006101247308A patent/CN100411211C/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0979994A2 (en) * | 1998-08-11 | 2000-02-16 | Instituto Elettrotecnico Nazionale Galileo Ferraris | Porous material optical gas sensing device |
| CN1423345A (en) * | 2001-12-07 | 2003-06-11 | 张修恒 | Structure and method for packaging colour light-emitting diode with stacked wafer |
| CN1497306A (en) * | 2002-09-30 | 2004-05-19 | ��ʽ��������Զ�֯�������� | Optical transmitting set, display unit and luminescence unit |
| CN1499651A (en) * | 2002-11-05 | 2004-05-26 | 炬鑫科技股份有限公司 | Method for manufacturing white light LED and illuminator |
| JP2004281929A (en) * | 2003-03-18 | 2004-10-07 | Canare Electric Co Ltd | Resonator type light emitting diode |
| JP2004356438A (en) * | 2003-05-29 | 2004-12-16 | Hamamatsu Photonics Kk | Semiconductor light emitting element |
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