JPH1093146A - Light-emitting diode - Google Patents

Light-emitting diode

Info

Publication number
JPH1093146A
JPH1093146A JP9306393A JP30639397A JPH1093146A JP H1093146 A JPH1093146 A JP H1093146A JP 9306393 A JP9306393 A JP 9306393A JP 30639397 A JP30639397 A JP 30639397A JP H1093146 A JPH1093146 A JP H1093146A
Authority
JP
Japan
Prior art keywords
light
emitting element
wavelength
gallium nitride
based compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9306393A
Other languages
Japanese (ja)
Other versions
JP2900928B2 (en
Inventor
Yoshiaki Tadatsu
芳昭 多田津
Shuji Nakamura
修二 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP30639397A priority Critical patent/JP2900928B2/en
Publication of JPH1093146A publication Critical patent/JPH1093146A/en
Application granted granted Critical
Publication of JP2900928B2 publication Critical patent/JP2900928B2/en
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PROBLEM TO BE SOLVED: To improve the luminosity and brightness of an LED, having a GaN compd. semiconductor-made light-emitting element. SOLUTION: The diode comprises a light-emitting element 11 and fluorescent dye or pigment 5 which is excited by a light from the element 1 at a wavelength to fluorescence at a different wavelength from the exciting one. The diode is such that the fluorescent dye or the pigment 5 surrounds the emitting element 11 on a metal and the element has laminated n- and p-type GaN compd. semiconductors and pair of electrodes wire-bonded to the element on the opposite surface to the metal. One electrode is an ohmic electrode connected to an exposed part of the surface of an n-type layer formed by etching the GaN compd. semiconductor.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は発光素子を樹脂モー
ルドで包囲してなる発光ダイオード（以下ＬＥＤとい
う）に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode (hereinafter, referred to as LED) in which a light emitting element is surrounded by a resin mold.

【０００２】[0002]

【従来の技術】一般に、ＬＥＤは図１に示すような構造
を有している。１はｌｍｍ角以下に切断された例えばＧ
ａＡｌＡｓ、ＧａＰ等よりなる発光素子、２はメタルス
テム、３はメタルポスト、４は発光素子を包囲する樹脂
モールドである。発光素子１の裏面電極はメタルステム
２に銀ペースト等で接着され電気的に接続されており、
発光素子１の表面電極は他端子であるメタルポスト３か
ら伸ばされた金線によりその表面でワイヤボンドされ、
さらに発光素子１は透明な樹脂モールド４でモールドさ
れている。2. Description of the Related Art Generally, an LED has a structure as shown in FIG. 1 is cut into 1 mm square or less, for example, G
A light emitting element made of aAlAs, GaP, or the like, 2 is a metal stem, 3 is a metal post, and 4 is a resin mold surrounding the light emitting element. The back electrode of the light emitting element 1 is electrically connected to the metal stem 2 by bonding with a silver paste or the like.
The surface electrode of the light emitting element 1 is wire-bonded on its surface by a gold wire extended from a metal post 3 as another terminal,
Further, the light emitting element 1 is molded with a transparent resin mold 4.

【０００３】通常、樹脂モールド４は、発光素子の発光
を空気中に効率よく放出する目的で、屈折率が高く、か
つ透明度の高い樹脂が選択されるが、他に、その発光素
子の発光色を変換する目的で、あるいは色を補正する目
的で、その樹脂モールド４の中に着色剤として無機顔
料、または有機顔料が混入される場合がある。例えば、
ＧａＰの半導体材料を有する緑色発光素子の樹脂モール
ド中に、赤色顔料を添加すれば発光色は白色とすること
ができる。Usually, a resin having a high refractive index and a high transparency is selected for the resin mold 4 in order to efficiently emit light emitted from the light emitting element into the air. In some cases, an inorganic pigment or an organic pigment is mixed as a colorant into the resin mold 4 for the purpose of converting the color or correcting the color. For example,
If a red pigment is added to the resin mold of the green light emitting element having a GaP semiconductor material, the emission color can be white.

【０００４】[0004]

【発明が解決しようとする課題】しかしながら、従来、
樹脂モールドに着色剤を添加して波長を変換するという
技術はほとんど実用化されておらず、着色剤により色補
正する技術がわずかに使われているのみである。なぜな
ら、樹脂モールドに、波長を変換できるほどの非発光物
質である着色剤を添加すると、ＬＥＤそのもの自体の輝
度が大きく低下してしまうからである。However, conventionally,
The technique of adding a colorant to a resin mold to convert the wavelength has hardly been put to practical use, and the technique of correcting the color with a colorant is only slightly used. This is because the addition of a coloring agent, which is a non-light-emitting substance that can convert the wavelength, to the resin mold significantly reduces the brightness of the LED itself.

【０００５】ところで、現在、ＬＥＤとして実用化され
ているのは、赤外、赤、黄色、緑色発光のＬＥＤであ
り、青色または紫外のＬＥＤは未だ実用化されていな
い。青色、紫外発光の発光素子はＩＩ−ＶＩ族のＺｎＳ
ｅ、ＩＶ−ＩＶ族のＳｉＣ、ＩＩＩ−Ｖ族のＧａＮ等の
半導体材料を用いて研究が進められ、最近、その中でも
一般式がＧａxＡｌ1-xＮ（但しＸは０≦Ｘ≦１であ
る。）で表される窒化ガリウム系化合物半導体が、常温
で、比較的優れた発光を示すことが発表され注目されて
いる。また、窒化ガリウム系化合物半導体を用いて、初
めてｐｎ接合を実現したＬＥＤが発表されている（応用
物理、６０巻、２号、ｐ１６３〜ｐ１６６、１９９
１）。それによるとｐｎ接合の窒化ガリウム系化合物半
導体を有するＬＥＤの発光波長は、主として４３０ｎｍ
付近にあり、さらに３７０ｎｍ付近の紫外域にも発光ピ
ークを有している。その波長は上記半導体材料の中で最
も短い波長である。しかし、そのＬＥＤは発光波長が示
すように紫色に近い発光色を有しているため視感度が悪
いという欠点がある。[0005] By the way, currently, LEDs that are put to practical use as LEDs are LEDs that emit infrared, red, yellow, and green light, and LEDs that emit blue or ultraviolet light have not been put to practical use yet. The blue and ultraviolet light-emitting elements are II-VI group ZnS.
e, studies have been made using semiconductor materials such as SiC of the IV-IV group and GaN of the III-V group, and recently, among them, the general formula is Ga x Al 1 -xN (where X is 0 ≦ X ≦ 1). It has been reported that the gallium nitride-based compound semiconductor represented by the formula (1) exhibits relatively excellent light emission at room temperature, and has attracted attention. Also, an LED that realizes a pn junction for the first time using a gallium nitride-based compound semiconductor has been announced (Applied Physics, Vol. 60, No. 2, p163-p166, 199).
1). According to this, the emission wavelength of an LED having a pn junction gallium nitride-based compound semiconductor is mainly 430 nm.
And also has an emission peak in the ultraviolet region around 370 nm. The wavelength is the shortest wavelength among the semiconductor materials. However, the LED has an emission color close to purple as indicated by the emission wavelength, and thus has a disadvantage that visibility is poor.

【０００６】本発明はこのような事情を鑑みなされたも
ので、その目的とするところは、窒化ガリウム系化合物
半導体材料よりなる発光素子を有するＬＥＤの視感度を
良くし、またその輝度を向上させることにある。The present invention has been made in view of such circumstances, and an object of the present invention is to improve the visibility of an LED having a light-emitting element made of a gallium nitride-based compound semiconductor material and to improve the luminance thereof. It is in.

【０００７】[0007]

【課題を解決するための手段】本発明の発光ダイオード
は、発光素子１１と、この発光素子１１からの波長によ
り励起されて、励起波長と異なる波長の蛍光を出す蛍光
染料又は蛍光顔料５とを有する。さらに、本発明の発光
ダイオードは、蛍光染料又は蛍光顔料５が、メタル上の
発光素子１１を包囲するよう配置されると共に、発光素
子が、ｎ型およびｐ型に積層されてなる窒化ガリウム系
化合物半導体を備える。窒化ガリウム系化合物半導体か
らなる発光素子１１は、メタルに対向する面の反対側に
位置する同一面側に一対の電極をワイヤボンドして接続
している。一方の電極は、窒化ガリウム系化合物半導体
がエッチングされてｎ型層の表面を露出させた部分に接
続されたオーミック電極である。本発明の請求項２の発
光ダイオードは、発光素子１１を、青色の可視光を発光
する窒化ガリウム系化合物半導体としている。The light emitting diode of the present invention comprises a light emitting element 11 and a fluorescent dye or pigment 5 which is excited by a wavelength from the light emitting element 11 and emits fluorescence having a wavelength different from the excitation wavelength. Have. Furthermore, in the light emitting diode of the present invention, a gallium nitride-based compound in which a fluorescent dye or a fluorescent pigment 5 is arranged so as to surround the light emitting element 11 on a metal and the light emitting elements are stacked in n-type and p-type. It has a semiconductor. In the light-emitting element 11 made of a gallium nitride-based compound semiconductor, a pair of electrodes is connected by wire bonding to the same surface located on the opposite side to the surface facing the metal. One electrode is an ohmic electrode connected to a portion where the gallium nitride-based compound semiconductor is etched to expose the surface of the n-type layer. In the light emitting diode according to a second aspect of the present invention, the light emitting element 11 is a gallium nitride-based compound semiconductor that emits blue visible light.

【０００８】[0008]

【発明の実施の形態】図２は本発明のＬＥＤの構造を示
す一実施例である。１１はサファイア基板の上にＧａＡ
ｌＮがｎ型およびｐ型に積層されてなる青色発光素子、
２および３は図１と同じくメタルステム、メタルポス
ト、４は発光素子を包囲する樹脂モールドである。発光
素子１１の裏面はサファイアの絶縁基板であり裏面から
電極を取り出せないため、ＧａＡｌＮ層のｎ電極をメタ
ルステム２と電気的に接続するため、ＧａＡｌＮ層をエ
ッチングしてｎ型層の表面を露出させてオーミック電極
を付け、金線によって電気的に接続する手法が取られて
いる。また他の電極は図１と同様にメタルポスト３から
伸ばした金線によりｐ型層の表面でワイヤボンドされて
いる。さらに樹脂モールド４には４２０〜４４０ｎｍ付
近の波長によって励起されて４８０ｎｍに発光ピークを
有する波長を発光する蛍光染料５が添加されている。FIG. 2 is an embodiment showing the structure of an LED according to the present invention. 11 is GaAs on a sapphire substrate
a blue light-emitting element in which 1N is stacked in n-type and p-type,
Reference numerals 2 and 3 denote a metal stem and a metal post as in FIG. 1, and reference numeral 4 denotes a resin mold surrounding the light emitting element. Since the back surface of the light emitting element 11 is a sapphire insulating substrate and the electrode cannot be taken out from the back surface, the GaAlN layer is etched to expose the surface of the n-type layer to electrically connect the n electrode of the GaAlN layer to the metal stem 2. Then, an ohmic electrode is attached, and a method of electrically connecting with a gold wire is adopted. The other electrodes are wire-bonded on the surface of the p-type layer by gold wires extending from the metal posts 3 as in FIG. Further, a fluorescent dye 5 that emits at a wavelength having an emission peak at 480 nm when excited by a wavelength around 420 to 440 nm is added to the resin mold 4.

【０００９】[0009]

【発明の効果】本発明の発光ダイオードの蛍光染料、蛍
光顔料は、短波長の光によって励起され、励起波長より
も長波長光を発光する。逆に長波長の光によって励起さ
れて短波長の光を発光する蛍光顔料もあるが、それはエ
ネルギー効率が非常に悪く微弱にしか発光しない。前記
したように窒化ガリウム系化合物半導体はＬＥＤに使用
される半導体材料中で最も短波長側にその発光ピークを
有するものであり、しかも紫外域にも発光ピークを有し
ている。そのためそれを発光素子の材料として使用した
場合、その発光素子を包囲する樹脂モールドに蛍光染
料、蛍光顔料を添加することにより、最も好適にそれら
蛍光物質を励起することができる。したがって青色ＬＥ
Ｄの色補正はいうにおよばず、蛍光染料、蛍光顔料の種
類によって数々の波長の光を変換することができる。さ
らに、短波長の光を長波長に変え、エネルギー効率がよ
い為、添加する蛍光染料、蛍光顔料が微量で済み、輝度
の低下の点からも非常に好都合である。The fluorescent dye and the fluorescent pigment of the light emitting diode of the present invention are excited by light having a short wavelength and emit light having a wavelength longer than the excitation wavelength. Conversely, some fluorescent pigments emit short-wavelength light when excited by long-wavelength light, but they have very poor energy efficiency and emit only weakly. As described above, a gallium nitride-based compound semiconductor has an emission peak on the shortest wavelength side among semiconductor materials used for LEDs, and also has an emission peak in an ultraviolet region. Therefore, when it is used as a material for a light emitting element, the fluorescent substance can be most suitably excited by adding a fluorescent dye or a fluorescent pigment to a resin mold surrounding the light emitting element. Therefore blue LE
Needless to say, color correction of D, light of various wavelengths can be converted depending on the type of fluorescent dye or fluorescent pigment. Furthermore, since short-wavelength light is converted into long-wavelength light and energy efficiency is high, only a small amount of fluorescent dye or fluorescent pigment needs to be added, which is very convenient from the viewpoint of lowering luminance.

【図面の簡単な説明】[Brief description of the drawings]

【図１】 従来の一ＬＥＤの構造を示す模式断面図FIG. 1 is a schematic sectional view showing the structure of a conventional LED.

【図２】 本発明のＬＥＤの一実施例の構造を示す模式
断面図FIG. 2 is a schematic sectional view showing the structure of an embodiment of the LED of the present invention.

【符号の説明】[Explanation of symbols]

１１・・・発光素子 ２・・・メタルステム ３・・・メタルポスト ４・・・樹脂モールド ５・・・蛍光染料 11 light emitting element 2 metal stem 3 metal post 4 resin mold 5 fluorescent dye

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 発光素子(11)と、この発光素子(11)から
の波長により励起されて、励起波長と異なる波長の蛍光
を出す蛍光染料又は蛍光顔料(5)とを有する発光ダイオ
ードにおいて、 前記蛍光染料又は蛍光顔料(5)は、メタル上の発光素子
(11)を包囲するよう配置されると共に、前記発光素子
は、ｎ型およびｐ型に積層されてなる窒化ガリウム系化
合物半導体を備え、 この窒化ガリウム系化合物半導体からなる発光素子(11)
は、メタルに対向する面の反対側に位置する同一面側
に、一対の電極をワイヤボンドして接続しており、一方
の電極は、窒化ガリウム系化合物半導体がエッチングさ
れてｎ型層の表面を露出させた部分に接続されたオーミ
ック電極であることを特徴とする発光ダイオード。1. A light-emitting diode comprising a light-emitting element (11) and a fluorescent dye or a fluorescent pigment (5) that is excited by a wavelength from the light-emitting element (11) and emits fluorescence having a wavelength different from the excitation wavelength. The fluorescent dye or fluorescent pigment (5) is a light-emitting element on a metal
The light emitting device is arranged so as to surround (11), the light emitting device includes a gallium nitride-based compound semiconductor laminated in n-type and p-type, and the light-emitting device (11) formed of the gallium nitride-based compound semiconductor.
Has a pair of electrodes connected by wire bonding to the same surface located on the opposite side of the surface facing the metal, and one of the electrodes is formed by etching a gallium nitride-based compound semiconductor and forming a surface of the n-type layer. A light-emitting diode, characterized by being an ohmic electrode connected to a portion where the is exposed. 【請求項２】 前記発光素子(11)が、青色の可視光を発
光する窒化ガリウム系化合物半導体である請求項１に記
載される発光ダイオード。2. The light-emitting diode according to claim 1, wherein the light-emitting element is a gallium nitride-based compound semiconductor that emits blue visible light.
JP30639397A 1997-10-20 1997-10-20 Light emitting diode Expired - Lifetime JP2900928B2 (en)

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