JP2008041807A - White light source - Google Patents

White light source Download PDF

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JP2008041807A
JP2008041807A JP2006211898A JP2006211898A JP2008041807A JP 2008041807 A JP2008041807 A JP 2008041807A JP 2006211898 A JP2006211898 A JP 2006211898A JP 2006211898 A JP2006211898 A JP 2006211898A JP 2008041807 A JP2008041807 A JP 2008041807A
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light
light emitting
quantum well
emitting element
green
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Koichi Goshonoo
浩一 五所野尾
Jitsuki Moriyama
実希 守山
Daisuke Yamazaki
大輔 山崎
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Toyoda Gosei Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a white light source ensuring excellent color balance of the three primary colors and higher light emitting coefficient. <P>SOLUTION: A multi-color light emitting element for emitting at least green and blue lights is sealed with a transparent sealing member, a fluorescent material is scattered into the sealing member, and the fluorescent material emits the red fluorescence using the light from the multi-color light emitting element as the excitation light. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は白色光源に関する。更に詳しくは、III族窒化物系化合物半導体発光素子を用いた白色光源の改良に関する。   The present invention relates to a white light source. More specifically, the present invention relates to an improvement of a white light source using a group III nitride compound semiconductor light emitting device.

白色光源として、発光素子と、これを封止する封止用樹脂に蛍光体を含有させた蛍光体層とを備える発光装置が実用化されている。このような白色光源の代表的な例として、青色発光素子と、青色光を励起光として黄色光を蛍光する蛍光体を分散させた封止部材とを備えた発光素子が知られている(例えば、特許文献１参照)。この白色光源では、視感度の高い緑色光の光度が少ないため、色バランスが十分ではなかった。
このような問題を解決するために、紫外発光素子と、紫外光を励起光として青色光、緑色光及び赤色光を蛍光する３種の蛍光体を分散させた封止部材とを備えた発光装置や、青色発光素子と、緑色光及び赤色光を蛍光する２種の蛍光体を分散させた封止部材とを備えた発光装置が開発されている（例えば、特許文献２及び特許文献３参照）。
しかしながら、複数種の蛍光体を用いた発光装置では、蛍光体の比重の違いにより封止部材内における各蛍光体の沈降の度合いが異なるため、封止部材において蛍光体の偏在が生じ、各蛍光体を均等に分散させることが困難であった。そのため、製造された白色光源ごとに白バランスにばらつきが生じやすかった。
また、ＩｎＸＧａ１−ＸＮ（０≦Ｘ≦１）は、ＩｎとＧａの組成比を変えることにより、紫外光から赤色光のエネルギーに相当するバンドギャップエネルギーを有するため、上記の組成からなる赤色、緑色及び青色量子井戸層を含む多重量子井戸構造を形成し、一つの発光素子で白色光を得る方法が検討されている（例えば、特許文献４参照）。
特開平１０−２４２５１３号公報 特開２００３−２４９６９４号公報 特開２００４−３２７５１８号公報 特開２００３−２３４７００号公報 As a white light source, a light-emitting device including a light-emitting element and a phosphor layer in which a phosphor is contained in a sealing resin that seals the light-emitting element has been put into practical use. As a typical example of such a white light source, a light emitting element including a blue light emitting element and a sealing member in which a phosphor that emits yellow light with blue light as excitation light is dispersed is known (for example, , See Patent Document 1). In this white light source, since the luminous intensity of green light with high visibility is small, the color balance is not sufficient.
In order to solve such a problem, a light-emitting device including an ultraviolet light-emitting element and a sealing member in which three kinds of phosphors that emit blue light, green light, and red light using ultraviolet light as excitation light are dispersed. In addition, a light-emitting device including a blue light-emitting element and a sealing member in which two kinds of phosphors that fluoresce green light and red light are dispersed has been developed (see, for example, Patent Document 2 and Patent Document 3). .
However, in a light emitting device using a plurality of types of phosphors, the degree of sedimentation of the phosphors in the sealing member varies depending on the specific gravity of the phosphors. It was difficult to distribute the body evenly. For this reason, the white balance is likely to vary for each manufactured white light source.
In X Ga 1-X N (0 ≦ X ≦ 1) has a band gap energy corresponding to the energy of ultraviolet light to red light by changing the composition ratio of In and Ga. A method of forming a multiple quantum well structure including red, green, and blue quantum well layers and obtaining white light with one light emitting element has been studied (for example, see Patent Document 4).
Japanese Patent Laid-Open No. 10-242513 JP 2003-249694 A JP 2004-327518 A JP 2003-234700 A

しかしながら、特許文献４の発光層の組成において、Ｉｎの組成比が大きくなると、良好な結晶を得ることが困難であるため、赤色量子井戸層の形成には問題が残る。また、長波長側の赤色光が青色発光層に吸収されやすいため、赤色光の光取り出し効率が悪い。
これらの理由から、一つの発光素子で白色光を得る方法の実用化は困難である。 However, in the composition of the light emitting layer of Patent Document 4, if the In composition ratio is increased, it is difficult to obtain a good crystal, so that a problem remains in the formation of the red quantum well layer. Further, since red light on the long wavelength side is easily absorbed by the blue light emitting layer, the light extraction efficiency of red light is poor.
For these reasons, it is difficult to put into practical use a method for obtaining white light with a single light emitting element.

この発明は上記課題の少なくとも一つを解決すべくなされたものであり、その第1の局面の構成は次のように規定される。即ち、
少なくとも緑色光と青色光を発光する多色発光素子と、
該発光素子からの光を励起光として、赤色蛍光を発光する蛍光体を含む透光性材料層と、を備えてなる白色光源。 The present invention has been made to solve at least one of the above problems, and the configuration of the first aspect thereof is defined as follows. That is,
A multicolor light emitting element emitting at least green light and blue light;
A white light source comprising: a translucent material layer including a phosphor that emits red fluorescence using light from the light emitting element as excitation light.

このように規定されるこの発明の白色光源によれば、発光素子から緑色光と青色光とが放出され、蛍光体から赤色光が放出されるので、白色光源として基本三原色（赤色光、緑色光、青色光）が含まれる。よって、色バランスのとれた白色光源を提供することができる。また、蛍光体を１種類のみ用いるのでこれを均等に分散させることができる。よって、白色光源ごとの白バランスが安定する。   According to the white light source of the present invention thus defined, green light and blue light are emitted from the light emitting element, and red light is emitted from the phosphor. Therefore, the basic three primary colors (red light, green light) , Blue light). Therefore, a white light source with a well-balanced color can be provided. Further, since only one type of phosphor is used, it can be evenly dispersed. Therefore, the white balance for each white light source is stabilized.

第２の局面の発明は次のように規定される。即ち、第1の局面の白色光源において、前記多色発光素子はIII族窒化物系化合物半導体からなり、前記緑色光を発光する緑色発光量子井戸層と前記青色光を発光する青色発光量子井戸層とを含む多重量子井戸構造を備えている、ことを特徴とする白色光源。
このように構成された白色光源によれば、多重量子井戸層を用いて緑色光と青色光を発光させるので、発光効率が向上して多重量子井戸から高い光量で光を放出することができる。その結果、白色光源として充分な出力を得ることができる。 The invention of the second aspect is defined as follows. That is, in the white light source of the first aspect, the multicolor light-emitting element is made of a group III nitride compound semiconductor, and emits green light and a blue light-emitting quantum well layer that emits blue light. A white light source comprising a multiple quantum well structure including:
According to the thus configured white light source, green light and blue light are emitted using the multiple quantum well layer, so that the light emission efficiency is improved and light can be emitted from the multiple quantum well with a high light quantity. As a result, a sufficient output as a white light source can be obtained.

ここで、蛍光体は発光素子からの光を励起光として赤色光を蛍光するものであれば任意に選択することができる。   Here, the phosphor can be arbitrarily selected as long as it emits red light using light from the light emitting element as excitation light.

緑色光を励起光として赤色光を蛍光する蛍光体として次のものを挙げることができる。
例えば、ＣａＡｌＳｉＮ３：Ｅｕである。 Examples of phosphors that emit green light as excitation light and red light as fluorescent light include the following.
For example, CaAlSiN 3 : Eu.

青色光を励起光として赤色光を蛍光する蛍光体として次のものを挙げることができる。
例えば、ＣａＡｌＳｉＮ３：Ｅｕ，ＡｅＳｉ：Ｅｕ（Ａｅ：アルカリ土類金属）、Ａｅ２Ｓｉ５Ｎ８：Ｅｕ（Ａｅ：アルカリ土類金属）である。
この発明の第3の局面で規定するように、発光素子から紫色を発光させてこの紫色光を励起光として赤色蛍光を発光させることができる。
この場合の蛍光体として次のものを挙げることができる。
例えば、Ｙ２Ｏ２Ｓ：Ｅｕ，Ｌａ２Ｏ２Ｓ：Ｅｕ，ＣａＡｌＳｉＮ３：Ｅｕである。 Examples of phosphors that fluoresce red light using blue light as excitation light include the following.
For example, CaAlSiN 3 : Eu, AeSi: Eu (Ae: alkaline earth metal), Ae 2 Si 5 N 8 : Eu (Ae: alkaline earth metal).
As defined in the third aspect of the present invention, purple light can be emitted from the light emitting element, and red fluorescence can be emitted using this purple light as excitation light.
Examples of the phosphor in this case include the following.
For example, Y 2 O 2 S: Eu, La 2 O 2 S: Eu, CaAlSiN 3 : Eu.

緑色光及び青色光、更には必要に応じて紫色光を共に効率よく放出する発光素子としてIII族窒化物系化合物半導体発光素子を用いることが好ましい。ここに、III族窒化物系化合物半導体とは、一般式としてＡｌＸＧａＹＩｎ１−Ｘ−ＹＮ（０≦Ｘ≦１、０≦Ｙ≦１、０≦Ｘ＋Ｙ≦１）の四元系で表され、ＡｌＮ、ＧａＮ及びＩｎＮのいわゆる２元系、ＡｌｘＧａ１−ｘＮ、ＡｌｘＩｎ１−ｘＮ及びＧａｘＩｎ１−ｘＮ（以上において０＜ｘ＜１）のいわゆる３元系を包含する。
多色発光のためには、量子井戸構造（多重量子井戸構造、若しくは単一量子井戸構造）を用いることが好ましい。本発明者らは、量子井戸層／バリア層を繰り返す一連の多重量子井戸構造において特定の量子井戸層の組成及び／又は膜厚を調整することにより、１つの素子において紫色発光、緑色発光、青色発光を同時発光できることを確認している。 It is preferable to use a group III nitride compound semiconductor light-emitting device as a light-emitting device that efficiently emits both green light and blue light, and further, if necessary, violet light. Here, the group III nitride compound semiconductor is a quaternary system of Al X Ga Y In 1- XYN (0 ≦ X ≦ 1, 0 ≦ Y ≦ 1, 0 ≦ X + Y ≦ 1) as a general formula. A so-called binary system of AlN, GaN and InN, so-called 3 of Al x Ga 1-x N, Al x In 1-x N and Ga x In 1-x N (where 0 <x <1). Includes the original system.
For multicolor light emission, it is preferable to use a quantum well structure (multiple quantum well structure or single quantum well structure). The inventors have adjusted the composition and / or film thickness of a specific quantum well layer in a series of multiple quantum well structures in which a quantum well layer / barrier layer is repeated, thereby making purple light emission, green light emission, blue light emission in one device. It has been confirmed that the light can be emitted simultaneously.

次に、この発明の実施例について説明する。
実施例の白色光源１を図１に示す。
この白色光源１は、多色発光素子１０をケース３０に封止したパッケージタイプであり、封止部材３１に蛍光体が分散されている。 Next, examples of the present invention will be described.
The white light source 1 of an Example is shown in FIG.
The white light source 1 is a package type in which the multicolor light emitting element 10 is sealed in a case 30, and phosphors are dispersed in a sealing member 31.

多色発光素子１０の構成を図２に示す。
多色発光素子１０の各III族窒化物系化合物半導体層のスペックは次の通りである。
層 ： 組成
ｐコンタクト層１７ ： ｐ−ＧａＮ：Ｍｇ ３０ｎｍ
ｐクラッド層１６ ： ＡｌＧａＮ ３００ｎｍ
ＭＱＷ層１５
バリア層１５１ ：ＡｌＧａＮ ８ｎｍ
青色発光量子井戸層１５２Ｂ：Ｉｎ０．２５Ｇａ０．７５Ｎ ３ｎｍ
紫色発光量子井戸層１５２Ｐ：Ｉｎ０．１Ｇａ０．９Ｎ ３ｎｍ
緑色発光量子井戸層１５２Ｇ：Ｉｎ０．３Ｇａ０．７Ｎ ３ｎｍ
中間層１４ ：ＩｎＧａＮ ２００ｎｍ
ｎコンタクト層１３ ：ｎ−ＧａＮ：Ｓｉ ２００ｎｍ
バッファ層 ：ＡｌＮ ２０ｎｍ
基板１２ ： サファイア １００μｍ The configuration of the multicolor light emitting element 10 is shown in FIG.
The specifications of each group III nitride compound semiconductor layer of the multicolor light emitting device 10 are as follows.
Layer: Composition p contact layer 17: p-GaN: Mg 30 nm
p-clad layer 16: AlGaN 300 nm
MQW layer 15
Barrier layer 151: AlGaN 8 nm
Blue light emitting quantum well layer 152B: In 0.25 Ga 0.75 N 3 nm
Purple light emitting quantum well layer 152P: In 0.1 Ga 0.9 N 3 nm
Green light emitting quantum well layer 152G: In 0.3 Ga 0.7 N 3 nm
Intermediate layer 14: InGaN 200 nm
n-contact layer 13: n-GaN: Si 200 nm
Buffer layer: AlN 20 nm
Substrate 12: Sapphire 100 μm

上記において、基板にはサファイアを用いたが、これに限定されることはなく、サファイア、スピネル、シリコン、炭化シリコン、酸化亜鉛、リン化ガリウム、ヒ化ガリウム、酸化マグネシウム、酸化マンガン、III族窒化物系化合物半導体単結晶等を用いることができる。
ｎコンタクト層及びｐコンタクト層としてはＧａＮが例示されているが、ＡｌＧａＮ、ＩｎＧａＮ若しくはＡｌＩｎＧａＮ、その他のIII族窒化物系化合物半導体を用いることができる。III族元素の一部をボロン（Ｂ）、タリウム（Ｔｌ）等で置換しても良く、窒素（Ｎ）の一部も リン（Ｐ）、ヒ素（Ａｓ）、アンチモン（Ｓｂ）、ビスマス（Ｂｉ）等で置換できる。また、発光層は任意のドーパントを含有するものであってもよい。
多重量子井戸層もIII族窒化物系化合物半導体層で形成することができる。
また、ｎ型層にドープされるｎ型不純物としてＳｉの他、Ｇｅ、Ｓｅ、Ｔｅ、Ｃ等を用いることもできる。
ｐ型層にドープされるｐ型不純物としてＭｇの他に、Ｚｎ、Ｂｅ、Ｃａ、Ｓｒ、Ｂａを用いることもできる。
ｎコンタクト層１３と多重量子井戸層１５との間にｎクラッド層を介在させることができる。 In the above, sapphire was used for the substrate, but the substrate is not limited to this, and sapphire, spinel, silicon, silicon carbide, zinc oxide, gallium phosphide, gallium arsenide, magnesium oxide, manganese oxide, Group III nitride A physical compound semiconductor single crystal or the like can be used.
GaN is exemplified as the n contact layer and the p contact layer, but AlGaN, InGaN or AlInGaN, and other group III nitride compound semiconductors can be used. Part of group III elements may be substituted with boron (B), thallium (Tl), etc., and part of nitrogen (N) may also be phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi ) Etc. Moreover, the light emitting layer may contain an arbitrary dopant.
The multiple quantum well layer can also be formed of a group III nitride compound semiconductor layer.
In addition to Si, Ge, Se, Te, C, or the like can be used as the n-type impurity doped in the n-type layer.
In addition to Mg, Zn, Be, Ca, Sr, or Ba can be used as the p-type impurity doped in the p-type layer.
An n-clad layer can be interposed between the n-contact layer 13 and the multiple quantum well layer 15.

上記構成の発光素子において、各III族窒化物系化合物半導体層はＭＯＣＶＤ法を実行して形成したが、分子線結晶成長法（ＭＢＥ法）、ハライド系気相成長法（ＨＶＰＥ法）、スパッタ法、イオンプレーティング法、電子シャワー法等の方法で形成することもできる。
ｐコンタクト層１７、多重量子井戸層１５、及びｎコンタクト層１３の一部がエッチングされて、ｎコンタクト層１３にｎパッド電極２０が蒸着により形成される。このｎ電極はＡｌとＶの２層で構成される。
ｐコンタクト層１７の全面に金を含む金属薄膜や金属酸化物（例えば、ＩＴＯ）の透光性電極が積層される。透光性電極の上に蒸着により金を含むｐ電極が形成される。
上記の工程により各半導体層及び各電極を形成した後、各チップの分離工程を行う。
このように構成された実施例の発光素子に電流を印加すると紫色系の発光（ピーク波長：４０５ｎｍ）、青色系の発光（ピーク波長：４５５ｎｍ）及び緑色系の発光（ピーク波長：５３０ｎｍ）が得られる。 In the light emitting device having the above-described structure, each group III nitride compound semiconductor layer is formed by executing MOCVD. Molecular beam crystal growth (MBE), halide vapor deposition (HVPE), sputtering It can also be formed by a method such as an ion plating method or an electron shower method.
The p contact layer 17, the multiple quantum well layer 15, and a part of the n contact layer 13 are etched, and an n pad electrode 20 is formed on the n contact layer 13 by vapor deposition. The n electrode is composed of two layers of Al and V.
A light-transmitting electrode made of a metal thin film or metal oxide (for example, ITO) containing gold is laminated on the entire surface of the p-contact layer 17. A p-electrode containing gold is formed on the translucent electrode by vapor deposition.
After forming each semiconductor layer and each electrode by the above process, a separation process of each chip is performed.
When a current is applied to the light emitting element of the embodiment thus configured, purple light emission (peak wavelength: 405 nm), blue light emission (peak wavelength: 455 nm), and green light emission (peak wavelength: 530 nm) are obtained. It is done.

このような構成の多色発光素子１０は、図１に示すとおり、カップ状のケース３０の底面中央にマウントされる。ケース３０の底面に形成されるボンディングパッド（図示せず）と多色発光素子１０の各電極パッド１９、２０がボンディングワイアで連結される。
ケース３０の凹部に透明なエポキシ樹脂からなる封止部材３１が充填されている。封止部材３１にはＹ２Ｏ２Ｓ：Ｅｕからなる蛍光体が均一に分散されている。この蛍光体は多色発光素子１０から放出される紫色系の発光色を励起光として赤色系の光を発光する。 The multicolor light emitting device 10 having such a configuration is mounted at the center of the bottom surface of the cup-shaped case 30 as shown in FIG. Bonding pads (not shown) formed on the bottom surface of the case 30 and the electrode pads 19 and 20 of the multicolor light emitting element 10 are connected by bonding wires.
The concave portion of the case 30 is filled with a sealing member 31 made of a transparent epoxy resin. In the sealing member 31, a phosphor made of Y 2 O 2 S: Eu is uniformly dispersed. The phosphor emits red light using the violet light emitted from the multicolor light emitting element 10 as excitation light.

封止部材３１は透光性の部材であればよく、上記のエポキシ樹脂に何ら限定されるものではない。封止部材として、シリコーン樹脂等の透明合成樹脂、ゾルゲルガラス等の透明無機材料を用いることができる。
蛍光体も上記のＹ２Ｏ２Ｓ：Ｅｕに限定されるものではなく、ＣａＡｌＳｉＮ３：Ｅｕ等の蛍光体を混合して、又は代替物として使用することができる。蛍光体は封止部材３１において多色発光素子１０の近傍へ高濃度に分散させることともできる。蛍光体に加えてシリカ等からなる光拡散材料を分散させることもできる。 The sealing member 31 should just be a translucent member, and is not limited to said epoxy resin at all. As the sealing member, a transparent synthetic resin such as silicone resin or a transparent inorganic material such as sol-gel glass can be used.
The phosphor is not limited to the above Y 2 O 2 S: Eu, and can be used by mixing phosphors such as CaAlSiN 3 : Eu or as an alternative. The phosphor can be dispersed at a high concentration in the vicinity of the multicolor light emitting element 10 in the sealing member 31. In addition to the phosphor, a light diffusing material made of silica or the like can be dispersed.

このように構成された実施例の白色光源１によれば、多色発光素子１の多重量子井戸層１５の紫色量子井戸層１５２Ｐから放出される紫色の光が封止部材３１に分散された蛍光体に吸収されて、赤色光に波長変換される。一方、多重量子井戸層１５の青色量子井戸層１５２Ｂから青色光が放出され、緑色量子井戸層１５２Ｇからは緑色光が放出される。このように、光の三原色である赤色光、緑色光及び青色光が放出されてバランス良く混合されることにより、白色光源が形成される。   According to the white light source 1 of the embodiment configured as above, the fluorescent light in which the purple light emitted from the purple quantum well layer 152P of the multiple quantum well layer 15 of the multicolor light emitting device 1 is dispersed in the sealing member 31 is used. It is absorbed by the body and converted into red light. On the other hand, blue light is emitted from the blue quantum well layer 152B of the multiple quantum well layer 15, and green light is emitted from the green quantum well layer 152G. In this way, red light, green light, and blue light, which are the three primary colors of light, are emitted and mixed in a balanced manner, thereby forming a white light source.

上記の例では、多色発光素子が緑色光及び青色光に加えて紫色光を発光させている。紫色光は赤色発光蛍光体の励起光となるものであるため、蛍光体として緑色若しくは青色を吸収して赤色発光するものを採用すれば、当該紫色の発光は不要になる。他方、励起光として紫外線を多色発光素子から放出し、これを赤色光に波長変換する蛍光体を用いることも可能である。   In the above example, the multicolor light emitting element emits purple light in addition to green light and blue light. Since violet light is the excitation light of the red light-emitting phosphor, if a phosphor that absorbs green or blue and emits red light is used, the purple light emission becomes unnecessary. On the other hand, it is also possible to use a phosphor that emits ultraviolet rays as excitation light from a multicolor light emitting element and converts the wavelength of the ultraviolet light into red light.

この発明は、上記発明の実施例の説明に何ら限定されるものではない。特許請求の範囲の記載を逸脱せず、当業者が容易に想到できる範囲で種々の変形態様もこの発明に含まれる。   The present invention is not limited to the description of the embodiments of the invention. Various modifications may be included in the present invention as long as those skilled in the art can easily conceive without departing from the description of the scope of claims.

図１はこの発明の実施例の白色光源の構成を示す断面図である。FIG. 1 is a sectional view showing the configuration of a white light source according to an embodiment of the present invention. 図２は実施例に用いられる多色発光素子の構成を示す模式図である。FIG. 2 is a schematic diagram showing a configuration of a multicolor light emitting device used in the examples.

符号の説明Explanation of symbols

１ 白色光源
１０ 多色発光素子
３０ ケース
３１ 封止部材 DESCRIPTION OF SYMBOLS 1 White light source 10 Multicolor light emitting element 30 Case 31 Sealing member

Claims (4)

少なくとも緑色光と青色光を発光する多色発光素子と、
該発光素子からの光を励起光として、赤色蛍光を発光する蛍光体を含む透光性材料層と、を備えてなる白色光源。 A multicolor light emitting element emitting at least green light and blue light;
A white light source comprising: a translucent material layer including a phosphor that emits red fluorescence using light from the light emitting element as excitation light. 前記多色発光素子はIII族窒化物系化合物半導体からなり、前記緑色光を発光する緑色発光量子井戸層と前記青色光を発光する青色発光量子井戸層とを含む多重量子井戸構造を備えている、ことを特徴とする請求項１に記載の白色光源。 The multicolor light emitting device is made of a group III nitride compound semiconductor and has a multiple quantum well structure including the green light emitting quantum well layer emitting green light and the blue light emitting quantum well layer emitting blue light. The white light source according to claim 1. 紫色光、緑色光と青色光を発光する多色発光素子と、
該発光素子からの前記紫色光を励起光として、赤色蛍光を発光する蛍光体を含む透光性材料層と、を備えてなる白色光源。 A multicolor light emitting element that emits purple light, green light and blue light;
A white light source comprising: a translucent material layer including a phosphor that emits red fluorescence using the violet light from the light emitting element as excitation light. 前記多色発光素子はIII族窒化物系化合物半導体からなり、前記紫色光を発光する紫色発光量子井戸層、前記緑色光を発光する緑色発光量子井戸層、及び前記青色光を発光する青色発光量子井戸層を含む多重量子井戸構造を備えている、ことを特徴とする請求項３に記載の白色光源。 The multicolor light emitting device is composed of a group III nitride compound semiconductor, and the purple light emitting quantum well layer emitting violet light, the green light emitting quantum well layer emitting green light, and the blue light emitting quantum emitting blue light. The white light source according to claim 3, comprising a multiple quantum well structure including a well layer.
JP2006211898A 2006-08-03 2006-08-03 White light source Pending JP2008041807A (en)

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Patent Citations (1)

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JP2005303320A (en) * 2004-04-14 2005-10-27 Genesys Photonics Inc One-chip led having three emission spectra of red, blue, and green wavelengths

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102315369A (en) * 2010-06-29 2012-01-11 日东电工株式会社 Luminescent coating and light-emitting device
JP2012015175A (en) * 2010-06-29 2012-01-19 Nitto Denko Corp Phosphor layer and light emitting device
US8796712B2 (en) 2010-06-29 2014-08-05 Nitto Denko Corporation Phosphor layer and light-emitting device
CN105161604A (en) * 2010-06-29 2015-12-16 日东电工株式会社 Phosphor layer and light-emitting device
JP2014187366A (en) * 2013-03-25 2014-10-02 Biroku Kagi Kofun Yugenkoshi Stacked light emitting diode array structure
JP2017045787A (en) * 2015-08-25 2017-03-02 シャープ株式会社 Nitride semiconductor light-emitting element
WO2018012585A1 (en) * 2016-07-13 2018-01-18 シャープ株式会社 Light emitting diode and light emitting device

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