CN104091875A - LED packaging structure - Google Patents
LED packaging structure Download PDFInfo
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- CN104091875A CN104091875A CN201410316144.8A CN201410316144A CN104091875A CN 104091875 A CN104091875 A CN 104091875A CN 201410316144 A CN201410316144 A CN 201410316144A CN 104091875 A CN104091875 A CN 104091875A
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- Prior art keywords
- light
- packaging
- conversion layer
- led
- base plate
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 60
- 238000006243 chemical reaction Methods 0.000 claims description 43
- 239000000919 ceramic Substances 0.000 claims description 35
- 239000000843 powder Substances 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 33
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000004038 photonic crystal Substances 0.000 claims description 2
- 239000002096 quantum dot Substances 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 2
- 239000000741 silica gel Substances 0.000 claims 1
- 229910002027 silica gel Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 18
- 230000001795 light effect Effects 0.000 abstract 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 239000003292 glue Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000000465 moulding Methods 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- YCKOAAUKSGOOJH-UHFFFAOYSA-N copper silver Chemical compound [Cu].[Ag].[Ag] YCKOAAUKSGOOJH-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses an LED packaging structure. The LED packaging structure comprises a packaging substrate, a reflecting layer, a light converting layer and an LED chip, wherein the packaging substrate is used for protecting and bearing the LED chip, the reflecting layer is located above the packaging substrate, the light converting layer is located on the reflecting layer, the LED chip without the reflecting layer is located on the light converting layer, and the LED chip can emit light with the specific wavelength in two directions. The LED packaging structure is characterized in that if the light emitting direction defining the packaging structure is positive, the light converting layer is located on the back face of the LED chip; the light emitted by the LED packaging structure is composed of the light emitted by the LED chip and the light with other wavelengths, wherein the light with other wavelengths is converted through the light converting layer. Due to the fact that part of light does not pass through the light converting layer and cannot be absorbed, the loss is reduced, and the light effect is improved.
Description
Technical field
The present invention relates to encapsulating structure based on light-emitting diode and preparation method thereof, particularly relate to the encapsulating structure containing light-converting material.
Background technology
Solid state lighting, particularly light-emitting diode (LED) are because its life-span is long, pollution-free, the high fluorescent lamp/incandescent lamp etc. that replaces just more and more of light efficiency becomes light source of new generation.Due to direct manufacture, LED is out monochromatic light, obtain white light, and must have multiple color to mix could form.The most frequently used mode of preparing white light LEDs is to utilize indigo plant/ultraviolet leds exciting light transition material, and the light being sent by LED self and the complementary light through light conversion layer conversion form white light jointly.
Shown in Fig. 1 is exactly the LED packaging body that utilizes prior art to prepare.Its preparation flow is generally: a LED base plate for packaging 101 is provided, LED chip 102 die bonds, on base plate for packaging, are applied to light conversion layer 103(again as fluorescent material on chip after routing), last baking molding.The blue light R sending from LED chip
1bafter phosphor powder layer, after being absorbed by fluorescent material, a part converts gold-tinted (R to
1yoand R
1yi); Another part Wavelength-converting not after phosphor powder layer, is still blue light (R
1boand R
1bi), this part non-switched blue light (R
1boand R
1bialthough) there is not wavelength conversion when the phosphor powder layer, but still to be absorbed part energy by phosphor powder layer, light efficiency is reduced.Meanwhile, this part non-switched blue light, after fluorescent material scattering, is distinguished the outer R of directive packaging body
1bowith R in packaging body
1bi.The wherein R in directive packaging body
1biagain absorb energy further loss through phosphor powder layer.
Summary of the invention
The object of the invention is to promote the light efficiency containing the encapsulating structure of light-converting material, mainly by reducing light-converting material, to light-emitting diode, luminous unnecessary absorption realizes.
For reaching this purpose, the invention provides a LED encapsulating structure, comprising: base plate for packaging, has relative upper and lower surface; Reflector, is positioned on the upper surface or lower surface of described base plate for packaging, and the light of base plate for packaging is pointed in reflection; Light conversion layer, is positioned on described reflector, absorbs the light of specific wavelength and converts the light of other wavelength to; LED chip, is positioned on described light conversion layer the light of upper and lower two-way transmitting specific wavelength; This encapsulating structure is characterised in that: if define described encapsulating structure light direction for just, light conversion layer is positioned at the back side of LED chip; What the light that described LED encapsulating structure sends was launched by described LED chip does not form through the light of light conversion layer and through the light of described light conversion layer.The light that described LED chip upwards sends, without light conversion layer, is not absorbed, thereby reduces the loss, and promotes light efficiency.
In certain embodiments, described LED base plate for packaging is containing fluorescent material, and described LED chip is flip-chip, is bonded directly on the salient point of base plate for packaging, without routing processing procedure.
In certain embodiments, described LED base plate for packaging is containing fluorescent material, and described LED chip is formal dress/vertical chip, and die bond is fitted on fluorescent material, needs routing to be connected on base plate for packaging.
In certain embodiments, described LED base plate for packaging has a raised platforms, and described LED chip is formal dress/vertical chip, and die bond is fitted on package substrate bumps platform, then routing is connected on base plate for packaging.
In certain embodiments, described LED base plate for packaging is not containing fluorescent material, and a side surface of described LED chip is containing fluorescent material, and described fluorescent material is deposited on LED surface in advance, and depositional mode can be spin coating, spraying, electrophoresis etc.
In certain embodiments, described LED base plate for packaging is not containing fluorescent material, and described LED chip is formed by ceramic fluorescent powder sheet and LED chip bonding.
In certain embodiments, described LED encapsulating structure also comprises selective reflecting lens, and it sees through the light of 500nm-780nm wavelength completely, and the light of part reflection/transmission 400nm-500nm wavelength.
The present invention also provides a kind of LED base plate for packaging, and it comprises: pedestal, and it is for carrying the remainder of base plate for packaging; Be positioned at the reflector on described pedestal; Be positioned at the light conversion layer on described reflector.The light of the first wavelength that so chip sends upward and can form white light after the light of the second wave length of reflective layer reflects is mixed together.
In certain embodiments, described pedestal is base of ceramic, arranges in advance circuit thereon, during for follow-up use and LED chip conducting; Then be used as reflector at described base of ceramic plated surface reflectorized material.Wherein, on described pedestal circuit, plate electric conducting material, as silver etc.At all the other positions plating insulating material, as DBR etc.; Finally, ceramic fluorescent powder sheet is aimed at and fitted on base of ceramic, sinter molding at 500 DEG C-1000 DEG C; Wherein, the pre-drilled through hole of described ceramic fluorescent powder sheet, and in through hole, insert electric conducting material.
In certain embodiments, first provide a ceramic fluorescent powder sheet, bored through hole thereon, and in through hole, insert electric conducting material; Make and cut off hurdle with insulating material at the described ceramic fluorescent powder sheet back side, separate positive and negative electrode through hole; At described ceramic fluorescent powder sheet back side plating conduction reflectorized material as reflector, as silver etc.; Under the reflector layer at the described ceramic fluorescent powder sheet back side, plate the conductive material layer of thick layer, for the protection of supporting phosphor sheet and reflector, play the effect of pedestal.The conduction reflector layer of this base plate for packaging and conductive material layer are spaced apart at positive and negative electrode through hole by described partition hurdle.
In certain embodiments, provide a pedestal, on it, arrange in advance groove, circuit and pedestal.Groove is used for placing phosphor powder layer; Circuit and pedestal are for forming and be electrically connected with LED chip; At described base-plates surface plating reflectorized material, as reflector, wherein circuit part forms electric conducting material, as silver etc., forms insulating material at all the other positions, as DBR etc.; The fluorescent glue preparing will be applied at described base-plates surface, at 100 DEG C of-500 DEG C of baking moldings; Grind/cutting planarization fluorescent glue surface, exposes pedestal.
Although describe the present invention in connection with some exemplary enforcements and using method hereinafter, it will be appreciated by those skilled in the art that and be not intended to the present invention to be limited to these embodiment.Otherwise, be intended to cover all substitutes, correction and the equivalent that are included in the defined spirit of the present invention of appending claims and scope.
Brief description of the drawings
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, for explaining the present invention, is not construed as limiting the invention together with embodiments of the present invention.In addition, accompanying drawing data are to describe summary, are not to draw in proportion.
Fig. 1 is LED packaging body prepared by prior art.
Fig. 2 is the metal material that the is usually used in reflector reflectivity at different-waveband.
Fig. 3 ~ 5 are the generalized section of the embodiment of the present invention 1.
Fig. 6 is the generalized section of the embodiment of the present invention 2.
Fig. 7 is the generalized section of the embodiment of the present invention 3.
Fig. 8 is the generalized section of the embodiment of the present invention 4.
Fig. 9 is the generalized section of the embodiment of the present invention 5.
Figure 10 ~ 11 are the generalized section of the embodiment of the present invention 6, and Figure 12 is the generalized section of the embodiment of the present invention 7.
In figure, each label represents:
R
1b: the blue light that chip sends
R
1bo: the blue light through the backward outer scattering of phosphor powder layer that chip sends
R
1bi: the blue light through the backward inscattering of phosphor powder layer that chip sends
R
1yo: what chip sent absorbs through phosphor powder layer the gold-tinted of changing backward outer transmitting
R
1yi: what chip sent absorbs through phosphor powder layer the gold-tinted of changing backward interior transmitting
R
2b: the blue light that chip is launched upward
R
2y : the gold-tinted of the blue light that chip is launched down after light conversion layer conversion
101,301,401,501,601,701,801,901: base plate for packaging
102,302,402,502,602,702:LED chip
103,303,403,503,603,703,803: light conversion layer
304,404,504,604,704,804,904: reflector
305,405,505,705,805: conductive pole
301a: ceramic body
301b: circuit under ceramic substrate
301c: circuit on ceramic substrate
301d: ceramic substrate interior bone conductive pole
301e: collets
302a: substrate
302b:n type layer
302c: active layer
302d:p type layer
304a, 804a:Ag reflector
304b, 804b:DBR reflector
406,506,606: wire
507: raised platforms
605,905: the pedestal of base plate for packaging
708: selective reflecting lens
901a: insulating body
901b: circuit
903: fluorescent glue.
Embodiment
Describe embodiments of the present invention in detail below with reference to drawings and Examples, to the present invention, how application technology means solve technical problem whereby, and the implementation procedure of reaching technique effect can fully understand and implement according to this.It should be noted that, only otherwise form conflict, each feature in each embodiment and each embodiment in the present invention can mutually combine, and the technical scheme forming is all within protection scope of the present invention.
Embodiment discloses a kind of LED base plate for packaging below, it is fixed on LED chip on base plate for packaging, baking molding afterwards, if define this encapsulating structure light direction for just, a light conversion layer is positioned at the back side of LED chip, and the light of the light that the light that this LED encapsulating structure sends is launched by this LED chip and other wavelength of being changed by light conversion layer thereof forms.Because a part of light is without light conversion layer, be not absorbed, thereby reduce the loss, promote light efficiency.
embodiment 1
Fig. 3 shows according to the profile of the LED encapsulating structure of first embodiment of the invention, and this encapsulating structure comprises: substrate 301, LED chip 302, light conversion layer 303, reflector 304.
Concrete, base plate for packaging 301 can be selected by one or more of plastics, metal, pottery and combine.Fig. 4 has shown a kind of structure of ceramic substrate, and it is applicable to the present embodiment.Please refer to Fig. 4, this ceramic substrate 301 comprises ceramic body 301a, lower surface circuit 301b, upper surface circuit 301c, is communicated with the through hole conductive pole 301d of the base of ceramic inside of upper and lower surface circuit, and wherein the circuit on same surface separates with collets 301e.Ceramic body 301a can be aluminium oxide, aluminium nitride etc., the better aluminium oxide of selecting.The material of upper and lower surface circuit and through hole conductive pole can be selected a kind of or its alloy in copper, silver, gold, preferred, taking copper as conductive material.Collets 301e material used is aluminium oxide.
Reflector 304 is formed on base plate for packaging 301, can metallic mirror surface, photonic crystal, reflective coating one or more combine.In the time adopting ceramic substrate shown in Fig. 4, reflector 304 is divided into two parts, the upper plating conduction of upper surface circuit 301c reflecting material 304a(is as high reflectance metal materials such as silver, aluminium), the upper plating of collets 301e insulating material 304b, is preferably distributed Bragg reflector (english abbreviation is DBR).
Light conversion layer 303 is positioned on reflector 304, has the inner through hole containing electric conducting material on it.The light-converting material of this light conversion layer 303 can be by combining with one or more of fluorescent material, quantum dot, organic fluorescence/phosphor material.In the present embodiment, select integral ceramic phosphor sheet as light conversion layer, the conductive pole 305 with phosphor sheet is connected with the circuit of base plate for packaging.While adopting ceramic substrate 301 shown in Fig. 4, light conversion layer 303 is aimed at and fitted on ceramic substrate 301, sinter molding at 500 DEG C ~ 1000 DEG C, preferably at 850 DEG C of sintering.Base plate for packaging 301 is one-body molded with ceramic fluorescent powder sheet, and each position is combined, and structural strength is higher, and conduction and heat conductivility are more excellent.Meanwhile, fluorescent material coating method does not need on different package supports, to apply respectively, has solved the large problem of conventional point glue mode color point differences, is more suitable in enormous quantities making and produces.In the present embodiment, the stroke of the blue light that LED sends dorsad in phosphor sheet is the twice of its thickness, therefore can change out more gold-tinted with thinner fluorescent material, and best thickness is for being less than 1mm.
LED chip 302 is positioned at light conversion layer 303, and the present embodiment is selected the flip LED chips of upper and lower surperficial capable of bidirectional luminescence, and its structural representation as shown in Figure 5, comprises Sapphire Substrate 302a, N-shaped layer 302b, active layer 302c and p-type layer 302d.This chip 302 is formed and is electrically connected with the conductive pole 305 of light conversion layer 303 by eutectic mode, simultaneously by filling the gap of LED chip 302 and light conversion layer 303, between LED chip and base plate for packaging, form heat conduction via, thereby realize the separation of thermoelectricity conduction, improve thermoelectricity conduction efficiency.This LED chip 302 sends the blue light of 450nm-460nm wavelength, and towards upper and lower both direction transmitting, the blue light of wherein launching down converts the gold-tinted of 570nm-580nm wavelength to through light conversion layer 303 respectively
r 2y , the blue light of launching upward with chip after 304 reflections of reflector
r 2b be mixed together into white light.Due to the blue light of launching upward
r 2b without phosphor powder layer, energy is not absorbed, thereby reduces the loss, and promotes light efficiency.Meanwhile, due to previously prepared good ceramic fluorescent powder sheet on base plate for packaging, omit and joined glue, some glue processing procedure at encapsulation section, made encapsulation procedure become more simple and easy to do, saved and prepare man-hour.Moreover, base plate for packaging surface is provided with reflector, and common metallic reflector (Au/Ag, as shown in Figure 2) often elongated with wavelength, reflectivity uprises, the blue light that so LED chip 302 launch down converts the gold-tinted of 570nm-580nm wavelength to through light conversion layer 303, then reflectivity raising when directive base plate for packaging, can further promote light efficiency.
embodiment 2
Fig. 6 shows according to the profile of the LED encapsulating structure of second embodiment of the invention, the difference of the present embodiment and embodiment 1 is: select 402, two electrodes of packed LED chip of upper and lower surperficial capable of bidirectional luminescence to be formed and be electrically connected with the conductive pole 405 of light conversion layer 403 by wire 406.
embodiment 3
Fig. 7 shows according to the profile of the LED encapsulating structure of third embodiment of the invention, the difference of the present embodiment and embodiment 1 is: base plate for packaging 501 has a raised platforms 507, LED chip 502 is formal dress/vertical chip, die bond is connected in this raised platforms 507, with light conversion layer (phosphor powder layer) 503 isolation.In the present embodiment, the heat that LED chip is sent out can not have influence on fluorescent material, makes fluorescent material be unlikely to cause because temperature is too high quantum luminous efficiency to reduce.This raised platforms below is transparent/hollow out design, is conducive to LED chip towards fluorescent material utilizing emitted light.
embodiment 4
Fig. 8 shows according to the profile of the LED encapsulating structure of fourth embodiment of the invention, and the difference of the present embodiment and embodiment 1 is: phosphor powder layer 603 is contained in LED chip 602 bottoms, forms and is electrically connected with the pedestal 605 of base plate for packaging 601 through routing 606.Phosphor powder layer on LED chip can obtain by two kinds of methods below: 1) at whole spraying/spin coating phosphor powder layer of epitaxial wafer, stroke split and cut into chip after baking molding; 2) after ceramic fluorescent powder sheet and epitaxial wafer bonding, then cutting stroke is cleaved into chip.
embodiment 5
Fig. 9 shows according to the profile of the LED encapsulating structure of fifth embodiment of the invention, the difference of the present embodiment and embodiment 1 is: packaging body is added a cover selective reflecting lens 708 outward, these lens 708 can see through the reddish yellow light of >500nm wavelength completely, and part reflects the blue light of <500nm, thereby make part blue light return phosphor powder layer through selective reflecting reflection from lens, convert more gold-tinted to, this encapsulating structure is more applicable for the high application of Huang/blue light ratio.
embodiment 6
Figure 10 has shown according to the profile of the LED base plate for packaging of sixth embodiment of the invention; this substrate comprises: ceramic fluorescent powder sheet 803; the electricity that is formed at these ceramic fluorescent powder sheet 803 back sides is led reflector 804a and DBR reflector 804b; be formed at the conductive material layer 801 of conductive reflective 804a below; its thickness is more than 100 microns; for the protection of supporting phosphor sheet and reflector, play the effect of pedestal.Wherein, DBR reflector 804b, as cutting off hurdle, separates positive and negative electrode through hole.
Figure 11 has shown the preparation flow of this LED base plate for packaging.First, provide a previously prepared good ceramic fluorescent powder sheet 803, it is inner containing through hole conductive pole 805.Then, the back side of ceramic fluorescent powder sheet 803 is divided into conduction region and isolated area, form insulating material in isolated area and make partition hurdle, separate positive and negative electrode through hole, adopt in the present embodiment DBR reflector, can adopt the combination of silica and titanium oxide, deposit Ag layer as reflector 803a in the conduction region of ceramic fluorescent powder sheet 803; Finally, at the backside deposition layer of conductive material layer of ceramic fluorescent powder sheet 803, as substrate 801, for the protection of supporting phosphor sheet and reflector, the material of conductive material layer 801 can be golden or its alloy of copper silver, and thickness is greater than 100 microns.Preferably, the gross thickness of this conductive material layer 801 and Ag reflector layer 803a is greater than the thickness in DBR reflector.In the present embodiment, can first form DBR reflector at whole ceramic fluorescent powder sheet 803 back sides, output with photoresist figure in DBR reflector, need the region of insulation to stop with photoresist, need the position of conduction to come out, then utilize identical photoetching offset plate figure to form conductive reflective 803a and conductive material layer 801.
The present embodiment has been saved base of ceramic, on cost, more has superiority, and it can be applicable to disclosed any one encapsulating structure of embodiment 1 ~ 5.
embodiment 7
Figure 12 has shown according to the profile of the LED base plate for packaging of seventh embodiment of the invention, this substrate comprises an insulating body 901a, this insulating body 901a has a groove, be used for filling fluorescent glue 903, circuit 901b is distributed in bottom portion of groove and extends to the sidewall of insulating body 901a through insulating body 901a.The upper surface Selective coating reflectorised paint of this insulating body 901a is used as reflector 904(except pedestal 905).Fluorescent glue 903 is filled in insulating body 901a groove, and it has an even surface, and exposes pedestal 905, for LED chip is installed.
This base plate for packaging is applicable to any one encapsulating structure of previous embodiment 1 ~ 5.
Only as described above, it is only the present invention's preferred embodiment, when not limiting with this scope of the invention process, the simple equivalence of generally being done according to the present patent application the scope of the claims and patent specification content changes and modifies, and is all still covered by the present invention within the scope of the patent.
Claims (15)
1. a LED encapsulating structure, comprising:
Base plate for packaging, has relative upper and lower surface;
Reflector, is positioned on the upper surface or lower surface of described base plate for packaging, and the light of base plate for packaging is pointed in reflection;
Light conversion layer, is positioned on described reflector, absorbs the light of specific wavelength and converts the light of other wavelength to;
LED chip, is positioned on described light conversion layer the light of upper and lower two-way transmitting specific wavelength;
This encapsulating structure is characterised in that: if define described encapsulating structure light direction for just, light conversion layer is positioned at the back side of LED chip, and what the light that described LED encapsulating structure sends was launched by described LED chip does not form through the light of light conversion layer and through the light of described light conversion layer.
2. LED encapsulating structure according to claim 1, is characterized in that: on the surface of described base plate for packaging, have positive and negative circuit, between the two by an insulation layer isolation.
3. LED encapsulating structure according to claim 2, it is characterized in that: described reflector is made up of conductive reflective and DBR reflector, wherein conductive reflective is formed on the circuit of described base plate for packaging, and described DBR reflector is formed at the insulation layer of described base plate for packaging.
4. LED encapsulating structure according to claim 1, is characterized in that: described base plate for packaging has raised platforms, and it is above described light conversion layer, and described LED chip is installed in this raised platforms, does not directly contact with described light conversion layer.
5. LED encapsulating structure according to claim 1, it is characterized in that: described base plate for packaging has an insulating body and circuit, this insulating body there is a groove, described circuit is distributed in this bottom portion of groove and extends to the sidewall of this insulating body through this insulating body.
6. LED encapsulating structure according to claim 5, is characterized in that: described reflector is formed on the upper surface of described base plate for packaging, and described light conversion layer is filled described groove, forms the entirety having an even surface with described base plate for packaging.
7. LED encapsulating structure according to claim 1, is characterized in that: described base plate for packaging is made up of two conducting blocks, between by an insulator isolation, it is upper that described reflector is formed at described two conductions, and be isolated into two electrical areas by this insulator.
8. LED encapsulating structure according to claim 1, is characterized in that: described reflector is combined by one or more of metallic mirror surface, photonic crystal, reflective coating.
9. LED encapsulating structure according to claim 1, is characterized in that: the light-converting material of described light conversion layer is combined by one or more of fluorescent material, quantum dot, organic fluorescence/phosphor material.
10. LED encapsulating structure according to claim 9, is characterized in that: described light conversion layer is to be mixed by fluorescent material and silica gel.
11. LED encapsulating structures according to claim 9, is characterized in that: described light conversion layer is ceramic fluorescent powder sheet.
12. LED encapsulating structures according to claim 1, is characterized in that: the thickness of described light conversion layer is less than 1mm.
13. LED encapsulating structures according to claim 1, is characterized in that: described light conversion layer has the through hole of inner filled conductive material.
14. LED encapsulating structures according to claim 1, is characterized in that: described LED chip sends the blue light of 400nm-500nm wavelength, described light conversion layer absorbs the blue light that described LED chip sends, and sends the light of 500nm-780nm wavelength.
15. LED encapsulating structures according to claim 1, is characterized in that: it also comprises lens, and it sees through the light of 500nm-780nm wavelength completely, and the light of part reflection/transmission 400nm-500nm wavelength.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410316144.8A CN104091875A (en) | 2014-07-04 | 2014-07-04 | LED packaging structure |
| PCT/CN2015/073470 WO2016000459A1 (en) | 2014-07-04 | 2015-03-02 | Led encapsulation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410316144.8A CN104091875A (en) | 2014-07-04 | 2014-07-04 | LED packaging structure |
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| CN104091875A true CN104091875A (en) | 2014-10-08 |
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| CN201410316144.8A Pending CN104091875A (en) | 2014-07-04 | 2014-07-04 | LED packaging structure |
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| CN (1) | CN104091875A (en) |
| WO (1) | WO2016000459A1 (en) |
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| WO2016000459A1 (en) * | 2014-07-04 | 2016-01-07 | 厦门市三安光电科技有限公司 | Led encapsulation structure |
| CN105845808A (en) * | 2016-06-02 | 2016-08-10 | 深圳朝伟达科技有限公司 | Preparation method for LED (Light Emitting Diode) package substrate |
| CN105914288A (en) * | 2016-06-02 | 2016-08-31 | 深圳朝伟达科技有限公司 | LED packaging substrate and preparation method thereof |
| CN105914285A (en) * | 2016-06-02 | 2016-08-31 | 深圳朝伟达科技有限公司 | LED packaging substrate |
| CN106025038A (en) * | 2016-06-02 | 2016-10-12 | 深圳朝伟达科技有限公司 | Preparation method for LED packaging substrate |
| WO2017025013A1 (en) * | 2015-08-11 | 2017-02-16 | 深圳朝伟达科技有限公司 | Led encapsulation substrate |
| CN107579144A (en) * | 2016-07-04 | 2018-01-12 | 株式会社小糸制作所 | Sintered body and light-emitting device |
| CN109643743A (en) * | 2016-06-21 | 2019-04-16 | 天空公司 | LED package |
| CN110416390A (en) * | 2019-07-30 | 2019-11-05 | 广东省半导体产业技术研究院 | The production method of nanocrystalline LED component and luminescent device |
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| CN114843253A (en) * | 2021-02-02 | 2022-08-02 | 光宝科技股份有限公司 | Light emitting device |
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| WO2016000459A1 (en) | 2016-01-07 |
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