KR20140007510A - Led package and method of manufacturing the same - Google Patents

Led package and method of manufacturing the same Download PDF

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Publication number
KR20140007510A
KR20140007510A KR1020120074285A KR20120074285A KR20140007510A KR 20140007510 A KR20140007510 A KR 20140007510A KR 1020120074285 A KR1020120074285 A KR 1020120074285A KR 20120074285 A KR20120074285 A KR 20120074285A KR 20140007510 A KR20140007510 A KR 20140007510A
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KR
South Korea
Prior art keywords
substrate
led chip
filling space
led
phosphor layer
Prior art date
Application number
KR1020120074285A
Other languages
Korean (ko)
Inventor
주재철
김영석
Original Assignee
주재철
김영석
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주재철, 김영석 filed Critical 주재철
Priority to KR1020120074285A priority Critical patent/KR20140007510A/en
Publication of KR20140007510A publication Critical patent/KR20140007510A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations
    • H01L33/56Materials, e.g. epoxy or silicone resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to a LED package and a method of manufacturing the same, a substrate; At least one LED chip mounted on the substrate; A molding part formed on the substrate and having a filling space around the LED chip; And a phosphor layer formed in the filling space of the molding part. As a result, the light emitting characteristics of the LED package may be improved by forming a filling space in which a fluorescent material may be filled in a molding part encapsulating the LED chip so that the fluorescent material may be uniformly distributed around the LED chip.

Description

LED package and its manufacturing method {LED Package and Method of manufacturing the same}

The present invention relates to an LED package and a method of manufacturing the same, and more particularly, to form a filling space for filling a fluorescent material in the molding portion sealing the LED chip to distribute the fluorescent material uniformly around the LED chip. The present invention relates to an LED package and a method of manufacturing the same, which can improve light emitting characteristics of the LED package.

In general, a light emitting diode (LED) is a type of diode that emits light when a current flows through a pn junction of a semiconductor, and gallium arsenide (GaAs) is light emitting used for infrared rays. Diodes, gallium arsenide (GaAlAs) are used for infrared or red light emitting diodes; gallium arsenide (GaAsP) is used for red, orange, or yellow light emitting diodes; gallium phosphide (GaP) is red, green, or Light emitting diodes used for yellow and gallium nitrite (GaN) are known as white light emitting diodes that emit white light by mixing phosphors containing Cr · Tm · Tb as rare earth materials as active ions.

In addition, a technique in which a phosphor is disposed on a light emitting diode chip, and a part of the first light emission of the light emitting diode chip and the secondary light emission wavelength-converted by the phosphor are mixed to realize white color. White light emitting diodes having a structure using phosphors are widely used because they are inexpensive and are very simple in principle and structurally. In general, a blue light emitting diode chip and a yellow light emitting phosphor that can be excited from blue light are combined to realize white light. For example, white light may be realized by mixing a blue light having a wavelength of 450 to 470 nm with yellow light of a yellow phosphor such as YAG: Ce or (Ba, Sr, Ca) 2 SiO 4: Eu. In addition, a blue light emitting diode chip and a red and green light emitting phosphor capable of excitation from blue light are combined to realize white light. For example, white light may be realized by mixing blue light having a wavelength of 450 to 470 nm, red light of a red phosphor represented by (Sr, Ca) S: Eu, and green light of a green phosphor represented by SrGa2S4: Eu.

When the phosphor is used, the above-mentioned phosphor is distributed in the transparent resin surrounding the light emitting diode chip, so that the phosphor can emit light using the light of the light emitting diode chip as an excitation source.

1 illustrates a conventional light emitting diode structure.

As shown in FIG. 1, the light emitting diode is mounted on the substrate 10 with the light emitting diode chip 20 and connected to wires to form a phosphor layer 30 on the light emitting diode chip 20. The molding layer 40 may be formed on the 30.

Here, the phosphor layer 30 may be formed by applying a cured resin containing a phosphor on the substrate 10 and the light emitting diode chip 20 to cure.

Here, since the phosphor emits light using the light of the light emitting diode chip as the excitation source, when the distribution of the phosphor is uneven, the path of the light is not uniform and color variation occurs. When color deviation occurs, light efficiency decreases and light emission characteristics such as color temperature and color coordinates become unstable. Therefore, in order to reduce color variation, a phosphor layer having a uniform thickness must be formed around the LED chip.

However, in the case of the light emitting diode according to the prior art, since the phosphor layer 30 is formed by applying a curable resin including a phosphor to the LED chip and curing the phosphor layer 30, it is not easy to form the phosphor layer in a desired shape.

In addition, the fluorescent material coating method of the surroundings of the chip according to the prior art has a problem in that the luminous efficiency is lowered as the amount of light transmitted is reduced by the light shielding effect of the phosphor surrounding the chip as the light from the LED chip is further away from the chip. have.

Accordingly, there is a need for a technology capable of easily forming a phosphor layer having a constant thickness on all surfaces including an upper surface and a side surface of the LED chip, and improving light emission characteristics.

Korean Laid-Open Patent Publication 10-2010-0109285: Molding method

The present invention has been made in order to solve the above-described problems, by forming a filling space for filling the fluorescent material in the LED sealing portion to distribute the fluorescent material around the LED chip by uniformly There is a technical problem to provide an LED package and a method of manufacturing the same that can improve the light emission characteristics.

According to an aspect of the present invention for solving the above problems, a substrate; At least one LED chip mounted on the substrate; A molding part formed on the substrate and having a filling space around the LED chip; And a phosphor layer formed in the filling space of the molding part.

Here, the substrate may include a metal substrate having a portion cut to both sides and having a first electrode and a second electrode formed thereon.

The first electrode and the second electrode may be electrically connected to the LED chip by wire bonding.

The molding unit may encapsulate the upper surface of the substrate and the LED chip using a light-transmissive encapsulant.

In addition, the filling space of the molding part may be formed to have a predetermined thickness.

The phosphor layer may be formed at the same height as the molding part in the filling space of the molding part.

According to another aspect of the present invention for solving the above problems, preparing a substrate; Mounting an LED chip on the substrate; Connecting the LED chip and an electrode provided on the substrate with a bonding wire; Forming a molding part having a filling space on a substrate on which the LED chip is mounted; And forming a phosphor layer in the filling space.

The molding part may encapsulate the upper surface of the substrate and the LED chip using a light-transmissive encapsulant.

In addition, the filling space of the molding part may be formed to have a predetermined thickness.

On the other hand, the step of forming a phosphor layer in the filling space, the step of filling a phosphor containing a resin and a phosphor in the filling space; Curing the fluorescent material; And planarizing the phosphor to the same height as the molding part to form the phosphor layer.

As described above, the LED package of the present invention and a method of manufacturing the LED package by forming a filling space to fill the fluorescent material to seal the LED chip to distribute the fluorescent material uniformly around the LED chip. Can improve the light emission characteristics.

In addition, the LED package and the manufacturing method of the present invention, the same amount of light is transmitted to the phosphor located far away from the chip can transmit more light energy to the phosphor far away from the chip can produce a brighter light It works.

1 is a cross-sectional view of an LED package according to the prior art,
2 is a cross-sectional view of an LED package according to an embodiment of the present invention;
3 to 6 is a manufacturing process diagram of the LED package according to an embodiment of the present invention,
7 is a flowchart of a method of manufacturing an LED package according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description with reference to the accompanying drawings, the same or corresponding components will be denoted by the same reference numerals, and redundant description thereof will be omitted.

2 is a cross-sectional view of an LED package according to an embodiment of the present invention.

As shown in FIG. 2, the LED package according to the present invention includes a substrate 100 having a first electrode 110 and a second electrode 120, and an LED chip 200 mounted on the substrate 100. And a molding part 300 encapsulated on the substrate 100 and having a filling space formed around the LED chip 200, and a phosphor layer 400 formed in the filling space.

When the substrate 100 is a metal substrate formed of a metal material, the first electrode 110, the second electrode 120, and the chip mounting unit may be formed in the form of a plate-shaped body that is structurally separated from each other.

The metal substrate 100 may be made of a metal material having excellent thermal conductivity, and may include copper (heavy Cu), stainless steel, aluminum (Al), nickel (Ni), magnesium (Mg), zinc (Zn), and tantalum. (Ta), or an alloy thereof. It is preferable that the substrate is made of aluminum (Al). In this case, when the substrate 100 is formed of aluminum, the surface of the chip mounting portion on which the chip is mounted on the substrate 100 may be further formed by anodizing. The insulating layer of the thin film by the oxide film may be formed on the surface of the substrate 100. When the surface of the chip mounting part is anodized, the first electrode 110 and the second electrode 120 which are shorted through the substrate 100 and the cutout may be electrically shorted by contact with the chip mounting part during fabrication of the package. Can be additionally prevented.

On the other hand, the substrate 100 may include a printed circuit board using a ceramic or polyphthalamide (PPA) resin material, and may further include a reflector reflecting light generated from the LED chip 200.

At least one LED chip 200 may be mounted on the substrate 100. The LED chip 200 mounted on the substrate 100 may be electrically connected to the first electrode 110 and the second electrode 120 formed on the substrate 100 using the bonding wires W. Referring to FIG. A plurality of LED chips 200 may be mounted, and the present embodiment illustrates a case in which the first to third LED chips are mounted.

The molding part 300 is formed on the substrate 100 on which the LED chip 200 is mounted to form a filling space around the LED chip 200. The molding part 300 may be formed by installing a mold (not shown) on the substrate 100 and filling the translucent resin in the mold. The molding part 300 may be formed of a transparent encapsulant including a transparent epoxy molding compound (EMC), glass, silicon, epoxy, or other transparent resin.

The molding part 300 has a filling space having an open upper portion, and the filling space corresponds to the shape of the LED chip 200 and has a uniform thickness of the space so that the fluorescent material is filled with a uniform thickness. The molding part 300 may be adopted as long as the upper part is open and has a filling space to surround the LED chip 200, thereby accommodating various LED chip shapes.

The phosphor layer 400 is formed in the filling space of the molding part 300. The phosphor layer 400 may be formed by filling a fluorescent material to cover the LED chip 200 in the filling space and then curing the phosphor. When the gap between the filling space of the molding part 300 and the LED chip 200 and the thickness of the filling space are constant, the phosphor layer 400 may be uniformly formed to form a light emission path of the LED chip 200 uniformly. Therefore, the color uniformity of output light can be improved. The fluorescent material may be formed by mixing a light-transmitting resin such as a transparent epoxy or a silicone resin with a phosphor. The phosphor included in the phosphor layer 400 emits primary light emitted from the LED chip 200 as secondary light of which wavelengths are converted, thereby realizing a color of a desired spectral region by mixing them.

Meanwhile, after forming the phosphor layer 400, an encapsulation member (not shown) may be further formed to protect the phosphor layer 400 and the molding part 300. The encapsulation member may include an epoxy resin, a silicone resin, or the like, and may be made of the same material as the molding part 300 described above.

In addition, a lens unit (not shown) may be further formed on the phosphor layer 400 to improve luminous efficiency. The lens unit may be formed to have a predetermined curved surface only on an upper portion of the region in which the LED chip 200 is mounted. When the plurality of LED chips 200 are mounted, the lens unit may have a predetermined curved surface on the entire upper surface of the plurality of LED chips 200. It may be formed to have.

As described above, the LED package of the present invention forms a molding part 300 having a filling space in the substrate 100 on which the LED chip 200 is mounted, and fills the fluorescent material in the filled space to form the phosphor layer 400. To form. Thus, the distance between the phosphor layer 400 and the LED chip 200 and the thickness of the phosphor layer 400 can be designed to be constant, and the shape of the phosphor layer 400 can be freely changed.

The LED package having such a configuration receives light from the first and second electrodes 110 and 120 provided in the substrate 100 so that light generated in the LED chip 200 is uniformly colored in the phosphor layer 400. The color deviation can be reduced as it is emitted to the outside through the conversion path.

3 to 6 is a manufacturing state diagram of the LED package according to the embodiment of the present invention, illustrating a manufacturing process of the LED package mounted with one LED chip 200 on a metal substrate.

As shown in the figure, in the LED package manufacturing method according to the present invention, the LED chip 200 is first mounted on the substrate 100 on which the first electrode 110 and the second electrode 120 are formed. Here, the substrate 100 is made of any one of aluminum (Al), copper (heavy Cu), stainless steel, nickel (Ni), magnesium (Mg), zinc (Zn), tantalum (Ta), or an alloy thereof. It can be formed as. The first electrode 110 and the second electrode 120 may be formed by cutting the metal substrate in a strip form or by mounting a pad.

Thereafter, the LED chip 200 is connected to the first electrode 110 and the second electrode 120 by a bonding wire.

Next, the molding part 300 having the filling space 350 is formed on the metal substrate 100. The molding part 300 may be formed by a transfer molding method using a mold (not shown) in which an inverted shape of the molding part 300 having the filling space 350 is transferred. Here, the filling space 350 may be formed to surround the upper surface and the side portion of the LED chip 200 with a predetermined thickness.

Thereafter, the mixture of the resin and the phosphor is injected into the filling space of the molding part 300 and cured, and then the phosphor layer 400 is formed by planarizing the phosphor layer 400 to the same height as the height of the molding part 300. do. Accordingly, the phosphor layer 400 surrounding the LED chip 200 may be formed at a predetermined thickness.

7 is a flowchart of a method of manufacturing an LED package according to an embodiment of the present invention.

As shown in FIG. 7, in order to manufacture an LED package, an LED chip 200 is first mounted on a substrate 100 (S110).

Thereafter, the bonding wires W are connected to the electrodes formed on the LED chip 200 and the substrate 100 (S120). Here, the electrode may be formed by mounting the LED chip 200 together with the LED chip 200 on the substrate, or cutting the metal substrate, and the like, depending on the method of mounting the LED chip 200 and the number of the mounted LED chips 200. Accordingly, one or more bonding wires W may be connected.

A molding part 300 having a filling space is formed on the substrate 100 on which the LED chip 200 is mounted (S130). The filling space may be formed to surround the top and side portions of the LED chip 200 with a predetermined thickness.

The phosphor layer 400 is filled in the filling space of the molding part 300 to form the phosphor layer 400 (S140). Here, the phosphor layer 400 may be planarized to the same height as the molding part 300, thereby forming the phosphor layer 400 surrounding the upper and side portions of the LED chip 200 to a predetermined thickness.

As described above, in the present invention, the molding unit 300 having the filling space is first formed on the substrate 100 on which the LED chip 200 is mounted, and the phosphor layer 400 is formed by filling the filling space with the fluorescent material. do. Accordingly, the thickness of the phosphor layer 400 may be uniformly formed to uniformly form a light emission path of the LED chip 200, thereby improving color uniformity of output light.

Thus, those skilled in the art will appreciate that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the embodiments described above are to be considered in all respects only as illustrative and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

100 substrate 110 first electrode
120: second electrode 200: LED chip
300: molding 350: filling space
400: phosphor layer

Claims (10)

Board;
At least one LED chip mounted on the substrate;
A molding part formed on the substrate and having a filling space around the LED chip; And
LED package including a phosphor layer formed in the filling space of the molding portion.
The method of claim 1,
Wherein:
LED package, characterized in that it comprises a metal substrate formed with a first electrode and a second electrode is cut partially on both sides.
3. The method of claim 2,
And the first electrode and the second electrode are electrically connected to the LED chip by wire bonding.
The method of claim 1,
The molding part,
The LED package, characterized in that for sealing the upper surface of the substrate and the LED chip using a light-transmissive sealing material.
The method of claim 1,
Filling space of the molding portion LED package, characterized in that formed in a constant thickness.
The method of claim 1,
The phosphor layer,
LED package, characterized in that formed in the filling space of the molding portion and the same height as the molding portion.
Preparing a substrate;
Mounting an LED chip on the substrate;
Connecting the LED chip and an electrode provided on the substrate with a bonding wire;
Forming a molding part having a filling space on a substrate on which the LED chip is mounted; And
Forming a phosphor layer in the filling space manufacturing method of the LED package.
The method of claim 7, wherein
The molding part,
The method of manufacturing an LED package, characterized in that for sealing the upper surface of the substrate and the LED chip using a light-transmissive sealing material.
The method of claim 7, wherein
Filling space of the molding portion is a manufacturing method of the LED package, characterized in that formed in a constant thickness.
The method of claim 7, wherein
Forming a phosphor layer in the filling space,
Filling a fluorescent material including a resin and a phosphor in the filling space;
Curing the fluorescent material; And
And planarizing the phosphor to the same height as the molding part to form the phosphor layer.
KR1020120074285A 2012-07-09 2012-07-09 Led package and method of manufacturing the same KR20140007510A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020120074285A KR20140007510A (en) 2012-07-09 2012-07-09 Led package and method of manufacturing the same

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Application Number Priority Date Filing Date Title
KR1020120074285A KR20140007510A (en) 2012-07-09 2012-07-09 Led package and method of manufacturing the same

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170058055A (en) * 2015-11-18 2017-05-26 엘지이노텍 주식회사 Light emitting device package and method of fabricating the same
CN110379324A (en) * 2019-07-23 2019-10-25 深圳光台实业有限公司 A kind of LED luminous display unit and preparation method thereof
WO2019221431A1 (en) * 2018-05-18 2019-11-21 엘지이노텍 주식회사 Lighting module and lighting device comprising same
CN112219060A (en) * 2018-05-24 2021-01-12 Lg伊诺特有限公司 Lighting module and lighting device with same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170058055A (en) * 2015-11-18 2017-05-26 엘지이노텍 주식회사 Light emitting device package and method of fabricating the same
WO2019221431A1 (en) * 2018-05-18 2019-11-21 엘지이노텍 주식회사 Lighting module and lighting device comprising same
KR20190132124A (en) * 2018-05-18 2019-11-27 엘지이노텍 주식회사 Lighting module and lighting apparatus
JP2021523539A (en) * 2018-05-18 2021-09-02 エルジー イノテック カンパニー リミテッド Lighting module and lighting equipment equipped with it
US11387395B2 (en) 2018-05-18 2022-07-12 Lg Innotek Co., Ltd. Lighting module and lighting device comprising the same
CN112219060A (en) * 2018-05-24 2021-01-12 Lg伊诺特有限公司 Lighting module and lighting device with same
EP3795890A4 (en) * 2018-05-24 2022-03-23 LG Innotek Co., Ltd. Lighting module and lighting apparatus having same
US11742465B2 (en) 2018-05-24 2023-08-29 Lg Innotek Co., Ltd. Lighting module and lighting apparatus having same
CN112219060B (en) * 2018-05-24 2024-03-26 Lg伊诺特有限公司 Lighting module
CN110379324A (en) * 2019-07-23 2019-10-25 深圳光台实业有限公司 A kind of LED luminous display unit and preparation method thereof

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