KR20140007510A - Led package and method of manufacturing the same - Google Patents
Led package and method of manufacturing the same Download PDFInfo
- Publication number
- KR20140007510A KR20140007510A KR1020120074285A KR20120074285A KR20140007510A KR 20140007510 A KR20140007510 A KR 20140007510A KR 1020120074285 A KR1020120074285 A KR 1020120074285A KR 20120074285 A KR20120074285 A KR 20120074285A KR 20140007510 A KR20140007510 A KR 20140007510A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- led chip
- filling space
- led
- phosphor layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 238000000465 moulding Methods 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 4
- 239000003566 sealing material Substances 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 239000004954 Polyphthalamide Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920006375 polyphtalamide Polymers 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- -1 YAG: Ce or (Ba Chemical compound 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a LED package and a method of manufacturing the same, a substrate; At least one LED chip mounted on the substrate; A molding part formed on the substrate and having a filling space around the LED chip; And a phosphor layer formed in the filling space of the molding part. As a result, the light emitting characteristics of the LED package may be improved by forming a filling space in which a fluorescent material may be filled in a molding part encapsulating the LED chip so that the fluorescent material may be uniformly distributed around the LED chip.
Description
The present invention relates to an LED package and a method of manufacturing the same, and more particularly, to form a filling space for filling a fluorescent material in the molding portion sealing the LED chip to distribute the fluorescent material uniformly around the LED chip. The present invention relates to an LED package and a method of manufacturing the same, which can improve light emitting characteristics of the LED package.
In general, a light emitting diode (LED) is a type of diode that emits light when a current flows through a pn junction of a semiconductor, and gallium arsenide (GaAs) is light emitting used for infrared rays. Diodes, gallium arsenide (GaAlAs) are used for infrared or red light emitting diodes; gallium arsenide (GaAsP) is used for red, orange, or yellow light emitting diodes; gallium phosphide (GaP) is red, green, or Light emitting diodes used for yellow and gallium nitrite (GaN) are known as white light emitting diodes that emit white light by mixing phosphors containing Cr · Tm · Tb as rare earth materials as active ions.
In addition, a technique in which a phosphor is disposed on a light emitting diode chip, and a part of the first light emission of the light emitting diode chip and the secondary light emission wavelength-converted by the phosphor are mixed to realize white color. White light emitting diodes having a structure using phosphors are widely used because they are inexpensive and are very simple in principle and structurally. In general, a blue light emitting diode chip and a yellow light emitting phosphor that can be excited from blue light are combined to realize white light. For example, white light may be realized by mixing a blue light having a wavelength of 450 to 470 nm with yellow light of a yellow phosphor such as YAG: Ce or (Ba, Sr, Ca) 2 SiO 4: Eu. In addition, a blue light emitting diode chip and a red and green light emitting phosphor capable of excitation from blue light are combined to realize white light. For example, white light may be realized by mixing blue light having a wavelength of 450 to 470 nm, red light of a red phosphor represented by (Sr, Ca) S: Eu, and green light of a green phosphor represented by SrGa2S4: Eu.
When the phosphor is used, the above-mentioned phosphor is distributed in the transparent resin surrounding the light emitting diode chip, so that the phosphor can emit light using the light of the light emitting diode chip as an excitation source.
1 illustrates a conventional light emitting diode structure.
As shown in FIG. 1, the light emitting diode is mounted on the
Here, the
Here, since the phosphor emits light using the light of the light emitting diode chip as the excitation source, when the distribution of the phosphor is uneven, the path of the light is not uniform and color variation occurs. When color deviation occurs, light efficiency decreases and light emission characteristics such as color temperature and color coordinates become unstable. Therefore, in order to reduce color variation, a phosphor layer having a uniform thickness must be formed around the LED chip.
However, in the case of the light emitting diode according to the prior art, since the
In addition, the fluorescent material coating method of the surroundings of the chip according to the prior art has a problem in that the luminous efficiency is lowered as the amount of light transmitted is reduced by the light shielding effect of the phosphor surrounding the chip as the light from the LED chip is further away from the chip. have.
Accordingly, there is a need for a technology capable of easily forming a phosphor layer having a constant thickness on all surfaces including an upper surface and a side surface of the LED chip, and improving light emission characteristics.
The present invention has been made in order to solve the above-described problems, by forming a filling space for filling the fluorescent material in the LED sealing portion to distribute the fluorescent material around the LED chip by uniformly There is a technical problem to provide an LED package and a method of manufacturing the same that can improve the light emission characteristics.
According to an aspect of the present invention for solving the above problems, a substrate; At least one LED chip mounted on the substrate; A molding part formed on the substrate and having a filling space around the LED chip; And a phosphor layer formed in the filling space of the molding part.
Here, the substrate may include a metal substrate having a portion cut to both sides and having a first electrode and a second electrode formed thereon.
The first electrode and the second electrode may be electrically connected to the LED chip by wire bonding.
The molding unit may encapsulate the upper surface of the substrate and the LED chip using a light-transmissive encapsulant.
In addition, the filling space of the molding part may be formed to have a predetermined thickness.
The phosphor layer may be formed at the same height as the molding part in the filling space of the molding part.
According to another aspect of the present invention for solving the above problems, preparing a substrate; Mounting an LED chip on the substrate; Connecting the LED chip and an electrode provided on the substrate with a bonding wire; Forming a molding part having a filling space on a substrate on which the LED chip is mounted; And forming a phosphor layer in the filling space.
The molding part may encapsulate the upper surface of the substrate and the LED chip using a light-transmissive encapsulant.
In addition, the filling space of the molding part may be formed to have a predetermined thickness.
On the other hand, the step of forming a phosphor layer in the filling space, the step of filling a phosphor containing a resin and a phosphor in the filling space; Curing the fluorescent material; And planarizing the phosphor to the same height as the molding part to form the phosphor layer.
As described above, the LED package of the present invention and a method of manufacturing the LED package by forming a filling space to fill the fluorescent material to seal the LED chip to distribute the fluorescent material uniformly around the LED chip. Can improve the light emission characteristics.
In addition, the LED package and the manufacturing method of the present invention, the same amount of light is transmitted to the phosphor located far away from the chip can transmit more light energy to the phosphor far away from the chip can produce a brighter light It works.
1 is a cross-sectional view of an LED package according to the prior art,
2 is a cross-sectional view of an LED package according to an embodiment of the present invention;
3 to 6 is a manufacturing process diagram of the LED package according to an embodiment of the present invention,
7 is a flowchart of a method of manufacturing an LED package according to an embodiment of the present invention.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description with reference to the accompanying drawings, the same or corresponding components will be denoted by the same reference numerals, and redundant description thereof will be omitted.
2 is a cross-sectional view of an LED package according to an embodiment of the present invention.
As shown in FIG. 2, the LED package according to the present invention includes a
When the
The
On the other hand, the
At least one
The
The
The
Meanwhile, after forming the
In addition, a lens unit (not shown) may be further formed on the
As described above, the LED package of the present invention forms a
The LED package having such a configuration receives light from the first and
3 to 6 is a manufacturing state diagram of the LED package according to the embodiment of the present invention, illustrating a manufacturing process of the LED package mounted with one
As shown in the figure, in the LED package manufacturing method according to the present invention, the
Thereafter, the
Next, the
Thereafter, the mixture of the resin and the phosphor is injected into the filling space of the
7 is a flowchart of a method of manufacturing an LED package according to an embodiment of the present invention.
As shown in FIG. 7, in order to manufacture an LED package, an
Thereafter, the bonding wires W are connected to the electrodes formed on the
A
The
As described above, in the present invention, the
Thus, those skilled in the art will appreciate that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the embodiments described above are to be considered in all respects only as illustrative and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.
100
120: second electrode 200: LED chip
300: molding 350: filling space
400: phosphor layer
Claims (10)
At least one LED chip mounted on the substrate;
A molding part formed on the substrate and having a filling space around the LED chip; And
LED package including a phosphor layer formed in the filling space of the molding portion.
Wherein:
LED package, characterized in that it comprises a metal substrate formed with a first electrode and a second electrode is cut partially on both sides.
And the first electrode and the second electrode are electrically connected to the LED chip by wire bonding.
The molding part,
The LED package, characterized in that for sealing the upper surface of the substrate and the LED chip using a light-transmissive sealing material.
Filling space of the molding portion LED package, characterized in that formed in a constant thickness.
The phosphor layer,
LED package, characterized in that formed in the filling space of the molding portion and the same height as the molding portion.
Mounting an LED chip on the substrate;
Connecting the LED chip and an electrode provided on the substrate with a bonding wire;
Forming a molding part having a filling space on a substrate on which the LED chip is mounted; And
Forming a phosphor layer in the filling space manufacturing method of the LED package.
The molding part,
The method of manufacturing an LED package, characterized in that for sealing the upper surface of the substrate and the LED chip using a light-transmissive sealing material.
Filling space of the molding portion is a manufacturing method of the LED package, characterized in that formed in a constant thickness.
Forming a phosphor layer in the filling space,
Filling a fluorescent material including a resin and a phosphor in the filling space;
Curing the fluorescent material; And
And planarizing the phosphor to the same height as the molding part to form the phosphor layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120074285A KR20140007510A (en) | 2012-07-09 | 2012-07-09 | Led package and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020120074285A KR20140007510A (en) | 2012-07-09 | 2012-07-09 | Led package and method of manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20140007510A true KR20140007510A (en) | 2014-01-20 |
Family
ID=50141827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020120074285A KR20140007510A (en) | 2012-07-09 | 2012-07-09 | Led package and method of manufacturing the same |
Country Status (1)
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KR (1) | KR20140007510A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170058055A (en) * | 2015-11-18 | 2017-05-26 | 엘지이노텍 주식회사 | Light emitting device package and method of fabricating the same |
CN110379324A (en) * | 2019-07-23 | 2019-10-25 | 深圳光台实业有限公司 | A kind of LED luminous display unit and preparation method thereof |
WO2019221431A1 (en) * | 2018-05-18 | 2019-11-21 | 엘지이노텍 주식회사 | Lighting module and lighting device comprising same |
CN112219060A (en) * | 2018-05-24 | 2021-01-12 | Lg伊诺特有限公司 | Lighting module and lighting device with same |
-
2012
- 2012-07-09 KR KR1020120074285A patent/KR20140007510A/en not_active Application Discontinuation
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170058055A (en) * | 2015-11-18 | 2017-05-26 | 엘지이노텍 주식회사 | Light emitting device package and method of fabricating the same |
WO2019221431A1 (en) * | 2018-05-18 | 2019-11-21 | 엘지이노텍 주식회사 | Lighting module and lighting device comprising same |
KR20190132124A (en) * | 2018-05-18 | 2019-11-27 | 엘지이노텍 주식회사 | Lighting module and lighting apparatus |
JP2021523539A (en) * | 2018-05-18 | 2021-09-02 | エルジー イノテック カンパニー リミテッド | Lighting module and lighting equipment equipped with it |
US11387395B2 (en) | 2018-05-18 | 2022-07-12 | Lg Innotek Co., Ltd. | Lighting module and lighting device comprising the same |
CN112219060A (en) * | 2018-05-24 | 2021-01-12 | Lg伊诺特有限公司 | Lighting module and lighting device with same |
EP3795890A4 (en) * | 2018-05-24 | 2022-03-23 | LG Innotek Co., Ltd. | Lighting module and lighting apparatus having same |
US11742465B2 (en) | 2018-05-24 | 2023-08-29 | Lg Innotek Co., Ltd. | Lighting module and lighting apparatus having same |
CN112219060B (en) * | 2018-05-24 | 2024-03-26 | Lg伊诺特有限公司 | Lighting module |
CN110379324A (en) * | 2019-07-23 | 2019-10-25 | 深圳光台实业有限公司 | A kind of LED luminous display unit and preparation method thereof |
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