CN202601714U - Combined electrode suitable for high-power GaN-based LED chip - Google Patents
Combined electrode suitable for high-power GaN-based LED chip Download PDFInfo
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- CN202601714U CN202601714U CN 201220196434 CN201220196434U CN202601714U CN 202601714 U CN202601714 U CN 202601714U CN 201220196434 CN201220196434 CN 201220196434 CN 201220196434 U CN201220196434 U CN 201220196434U CN 202601714 U CN202601714 U CN 202601714U
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Abstract
The utility model relates to a combined electrode suitable for a high-power GaN-based LED chip. The combined electrode comprises a P electrode and an N electrode; the P electrode is a combined electrode containing an ITO (Indium Tin Oxide) film, a P-surface metal bonding pad and a P-surface ITO bar-type electrode, to be specific, the ITO film covers the P-type GaN surface, the P-surface metal bonding pad is arranged at one end of the P-type GaN surface, and the P-surface ITO bar-type electrode is connected with the P-surface metal bonding pad and extends towards another end; and the N electrode is an N combined electrode containing an N-surface metal bonding pad and an N-surface ITO bar-type electrode, to be specific, the N-surface metal bonding pad is arranged in the middle of one end of the N-surface, and the N-surface ITO bar-type electrode is connected with the N-surface metal bonding pad and extends towards another end along the edge of the N-surface from two ends of the metal bonding pad. According to the utility model, the ITO bar-types have better light permeability and capabilities of improving the light emitting efficiency of the LED chip and the uniformity of current extension, improving the heat radiation uniformity and making preparation for development of LED chips.
Description
Technical field
The utility model relates to the led chip technical field, and concrete is a kind of new combination electrode that is applicable to GaN based LED chip of great power.
Background technology
Light-emitting diode (LED) is a kind of solid-state semiconductor device that can electric energy be converted into visible light, can directly electricity be converted into light, is solid state light emitter of new generation.LED has that volume is little, power consumption is low, long service life, luminous efficiency is high, heat is low, environmental protection and energy saving, plurality of advantages such as sturdy and durable, thereby has wide application market.At present, LED has obtained extensive use in fields such as backlight, traffic lights, large scale display, automobile, decorative lightings, and along with the continuous development of technology with ripe, LED will be expected to become the 4th generation lighting source.And gallium nitride (GaN) and compound thereof are important third generation semi-conducting materials after germanium (Ge), silicon (Si) and GaAs (GaAs), indium phosphide (InP); Be acknowledged as the significant achievement of photoelectron science and technology at present based on the development of the basic LED of GaN; Be the key light source of development solid-state illumination, the human illumination of realization revolution, be with a wide range of applications.
Commercial LED production mainly is to adopt method extension on Sapphire Substrate of metal organic chemical vapor deposition (MOCVD) to obtain.Because sapphire is an insulator, it is peeled off difficult the realization, so present business-like GaN base LED adopts planar structure more.Corresponding way is: earlier etching is carried out in Sapphire Substrate epi-layer surface subregion, form mesa structure, expose the N district then, P electrode, N electrode are made in the same side of device.Because electric current always trends towards " searching " minimal path in flow process, certainly exist the influence to chip light-emitting of electric current uneven problem extending transversely and metal electrode like this.So for the led chip of planar structure, the quality that electrode pair reasonable in design promotes chip has very crucial effect.
At present, the electrode of common LED chip generally is made up of P, N face metal pad and P face transparency conducting layer two parts, and said metal pad is general to be adopted and the reasonable metal material of GaN adhesiveness, and its design generally need not considered light transmission.The design of said P face transparency conducting layer then need be considered permeability and the conductivity to light simultaneously.The P face transparency conducting layer of common LED chip adopts vapor deposition nickel (Ni), gold (Au) film and its mode of carrying out alloy is realized.But the conductive film that this mode is made is relatively poor to the permeability of light.The appearance of transparent conductive metal oxide tin indium oxide (ITO) has overcome the deficiency of original technology to a great extent, has improved the transmitance of conductive film light.But the architectural characteristic of ITO material itself causes its electrical property and optical property can not all reach optimum simultaneously.Like this, in order to obtain the electric conductivity that light transmission features preferably must reduce conductive film.Tin indium oxide (ITO) or tin-doped indium oxide are indium (III family) oxide (In2O3) and tin (IV family) oxide (SnO
2) mixture.Concerning large-sized led chip, this ito thin film with high resistivity characteristic is particularly evident to electric current influence extending transversely.Be head it off, at present corresponding way is: the metal strip electrode that low resistive light-proof materials such as Cr/Au are processed is extended by P, N metal pad and is uniformly distributed in the transparent conductive film surface.This method can solve electric current and be difficult to the problem in the ito thin film layer, expanded.Yet be accompanied by the increase of led chip size; The ito thin film of this high light transmittance will need more metal strip electrode to increase the divergence of electric current; Thereby take more glazed area; The problem of thereupon bringing is that the absorption meeting that stops to light increases gradually, thereby has reduced the light extraction efficiency of led chip.If but that the metal strip electrode is used is very few, can reduce the ability of current expansion again.
The utility model content
The purpose of the utility model is to address the above problem; A kind of new combination electrode that is applicable to GaN based LED chip of great power is provided; It can improve the light extraction efficiency of led chip and the uniformity of current expansion, can improve the uniformity of led chip heat radiation to a certain extent.
For realizing above-mentioned purpose, the technical scheme that the utility model is taked is following.
A kind of combination electrode that is applicable to GaN based LED chip of great power; Contain p side electrode and N face electrode; It is characterized in that said p side electrode is the P face combination electrode that contains ito thin film, P face metal pad and P face ITO strip electrode, said ito thin film covers P type gallium nitride (GaN) surface; Said P face metal pad is arranged on an end on P type GaN surface, and said P face ITO strip electrode is connected with said P face metal pad and is extended to the other end by P face metal pad; Said N face electrode is the N face combination electrode that contains N face metal pad, N face ITO strip electrode; Said N face metal pad is arranged on the centre of N face one end (indent is arranged), and said N face ITO strip electrode is connected with said N face metal pad and the other end to the N face extends to the end near P face metal pad along N face edge by N face metal pad two ends.
Further, said P face ITO strip electrode is the structure of strip.
Further, said P face ITO strip electrode is radial structure.
The utility model is applicable to that the good effect of the combination electrode of GaN based LED chip of great power is:
(1) the P face ITO strip electrode that adopts has certain light transmission.
(2) in the design of electrode, can adopt one or many or the P face ITO strip electrode that distributes radially and do not influence its light extraction efficiency, for production large scale led chip has been done technical preparation.
(3) improve the light extraction efficiency of led chip and the uniformity of current expansion, improved the uniformity of led chip heat radiation to a certain extent.
Description of drawings
Fig. 1 is applicable to the structural representation of a kind of embodiment of combination electrode of GaN based LED chip of great power for the utility model.
Fig. 2 is applicable to the structural representation of the another kind of embodiment of combination electrode of GaN based LED chip of great power for the utility model.
Label among the figure is respectively:
1, ito thin film; 2, P face metal pad; 3, P face ITO strip electrode; 4, N face metal pad; 5, N face ITO strip electrode.
Embodiment
Continue to explain that below in conjunction with accompanying drawing the utility model is applicable to the practical implementation situation of the combination electrode of GaN based LED chip of great power, 2 embodiment are provided.But the enforcement of the utility model is not limited to following execution mode.
Referring to accompanying drawing 1.A kind of combination electrode that is applicable to GaN based LED chip of great power; P side electrode and N face electrode are set on the substrate of led chip; Said p side electrode comprises light transmission better but relatively poor relatively ito thin film 1, nontransparent P face metal pad 2 and the P face ITO strip electrode 3 of conductivity, and their constitute P face combination electrode.Said ito thin film 1 is covered led chip P type gallium nitride (GaN) surface; Said P face metal pad 2 is arranged on an end (not having the arc indent) on P type GaN surface; Said P face ITO strip electrode 3 is a list structure; The one of which end is connected with described P face metal pad 2, and the other end is extended by the other end (the arc indent is arranged) of P face metal pad 2 to P type GaN surface, and its length is near the length on P type GaN surface.
Said N face electrode is the N face combination electrode that contains N face metal pad 4 and N face ITO strip electrode 5.The centre that said N face metal pad 4 is arranged on N face one end (promptly; Have on the led chip in the structure of arc indent); With said N face ITO strip electrode 5 be connected with said N face metal pad 4 and by N face metal pad 4 two ends along N face edge (being the edge of led chip substrate) extend to the other end of N face, until a end near P face metal pad 2.
In the enforcement, said P face ITO strip electrode 3 adopts and N face ITO strip electrode 5 number of various materials, and specifically, said P face ITO strip electrode 3 can adopt tin ash (SnO
2) ITO material that mass percent equals 10%, its transmitance is moderate, resistivity lower (concrete can through tendentious choice on the performance is carried out in the design of ITO component).
Said N face ITO strip electrode 5 can adopt with P face ITO strip electrode 3 identical materials and make.
The direct effect of adopting above-mentioned ITO material is the diffusivity that has increased the led chip electric current, can solve the relatively poor problem of transverse electric extended capability that high light transmittance ITO exists, and makes electric current evenly be diffused into the whole LED chip surface.On the other hand, increased transmittancy with respect to lighttight metal strip electrode.
Embodiment 2(referring to accompanying drawing 2)
A kind of combination electrode that is applicable to GaN based LED chip of great power, itself and embodiment 1 difference are:
(1) described P face ITO strip electrode 3 is radial structure, and it has an end to be connected with described P face metal pad 2, becomes pinniform to scatter and extend to P type GaN surface in addition, covers P type GaN surface.The P face ITO strip electrode 3 that distributes does not radially influence the light extraction efficiency of led chip, for production large scale led chip has been done technical preparation.
(2) said P face ITO strip electrode 3 adopts and N face ITO strip electrode 5 number of various materials: P face ITO strip electrode 3 adopts tin ash (SnO
2) mass percent is 25% ITO material; N face ITO strip electrode 5 adopts tin ash (SnO
2) mass percent is 15% ITO material.
The above is merely the preferred implementation of the utility model; Should be understood that; For those skilled in the art; Under the prerequisite that does not break away from the utility model structure, can also make some improvement and retouching, these improvement and retouching also should be regarded as in the protection range of the utility model.
Claims (3)
1. combination electrode that is applicable to GaN based LED chip of great power; Contain p side electrode and N face electrode; It is characterized in that; Said p side electrode is for containing the P face combination electrode of ito thin film (1), P face metal pad (2) and P face ITO strip electrode (3); Said ito thin film (1) covers P type gallium nitride surface, and said P face metal pad (2) is arranged on an end on P type GaN surface, and said P face ITO strip electrode (3) is connected with said P face metal pad (2) and is extended to the other end by P face metal pad (2); Said N face electrode is for containing the N face combination electrode of N face metal pad (4), N face ITO strip electrode (5); Said N face metal pad (4) is arranged on the centre of N face one end, and said N face ITO strip electrode (5) is connected with said N face metal pad (4) and the other end to the N face extends to the end near P face metal pad (2) along N face edge by N face metal pad (4) two ends.
2. the combination electrode that is applicable to GaN based LED chip of great power according to claim 1 is characterized in that, described P face ITO strip electrode (3) is the structure of strip.
3. the combination electrode that is applicable to GaN based LED chip of great power according to claim 1 is characterized in that, described P face ITO strip electrode (3) is radial structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220196434 CN202601714U (en) | 2012-05-04 | 2012-05-04 | Combined electrode suitable for high-power GaN-based LED chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220196434 CN202601714U (en) | 2012-05-04 | 2012-05-04 | Combined electrode suitable for high-power GaN-based LED chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202601714U true CN202601714U (en) | 2012-12-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220196434 Expired - Fee Related CN202601714U (en) | 2012-05-04 | 2012-05-04 | Combined electrode suitable for high-power GaN-based LED chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709431A (en) * | 2012-05-04 | 2012-10-03 | 施科特光电材料(昆山)有限公司 | Composition electrode applicable to large-power gallium nitride (GaN) based light-emitting diode (LED) chip |
-
2012
- 2012-05-04 CN CN 201220196434 patent/CN202601714U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709431A (en) * | 2012-05-04 | 2012-10-03 | 施科特光电材料(昆山)有限公司 | Composition electrode applicable to large-power gallium nitride (GaN) based light-emitting diode (LED) chip |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121212 Termination date: 20160504 |
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| CF01 | Termination of patent right due to non-payment of annual fee |