CN101908592A - Light-emitting diode (LED) electrode structure for effectively utilizing current and manufacturing method thereof - Google Patents
Light-emitting diode (LED) electrode structure for effectively utilizing current and manufacturing method thereof Download PDFInfo
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- CN101908592A CN101908592A CN 201010226992 CN201010226992A CN101908592A CN 101908592 A CN101908592 A CN 101908592A CN 201010226992 CN201010226992 CN 201010226992 CN 201010226992 A CN201010226992 A CN 201010226992A CN 101908592 A CN101908592 A CN 101908592A
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Abstract
The invention discloses a light-emitting diode (LED) electrode structure for effectively utilizing current and a manufacturing method thereof. In the LED electrode structure, a partial non-ohmic contact area is formed below an LED electrode. The method for manufacturing the LED electrode structure comprises the following steps of: manufacturing an ohmic contact layer on an LED tube core, removing a partial non-ohmic contact layer at a position, at which the electrode is to be manufactured, on the ohmic contact layer, removing a photoresist and washing, evaporating and coating a metal electrode layer on the entire ohmic contact layer including the removed part by the conventional method, and removing a part of metal electrode layer outside an electrode pattern to be manufactured by corroding; and alloying to form ohmic contact on the remaining ohmic contact layer. The LED electrode structure has the advantages of reducing blocked light, increasing effective utilization of current and improving luminous efficiency. The manufacturing method has the advantages of simple operation, easy implementation, high reliability and stability and wide application range.
Description
Technical field
The present invention relates to the method for making its electrode of a kind of semiconductor light-emitting-diode (LED), belong to the semiconductor device processing technology field.
Background technology
Plurality of advantages such as LED has the luminous efficiency height, power consumption is little, the life-span is long, caloric value is low, volume is little, environmental protection and energy saving, thereby have application market widely, as fields such as automobile, backlight, traffic lights, large scale display, military affairs.
Along with the high speed development of semiconductor technology, internal quantum efficiency reaches more than 90%, and external quantum efficiency is subjected to all multifactor influences and improves not significantly, and for example chip structure, electrode shape etc. directly affect the LED light extraction efficiency.For the LED of ordinary construction, its structure comprises from top to bottom successively: top electrode, ohmic contact layer, current extending, upper limiting layer, active area, lower limit layer, resilient coating, substrate and bottom electrode.The making of top electrode is an evaporation metal electrode layer on ohmic contact layer, and back photoetching electrode pattern corrosion forms top electrode, forms ohmic contact by alloy at last.What initial LED adopted is traditional circular electrode, circular electrode not only is used for doing the weld pad of routing but also is used as current expansion, when voltage is added on the electrode, electric current mainly concentrates on the subregion of electrode below, and electrode is limited to the distance of active area, when electric current also is not able to do in time just to have arrived when extending transversely active area, it is the part active area that light-emitting zone mainly concentrates on the electrode below, cause the electric field concentrations, the LED non-uniform light, poor heat stability, the lost of life, problems such as light extraction efficiency is lower, the shape of therefore improving electrode becomes urgent day by day to improve light extraction efficiency.People have designed electrode shape miscellaneous, as cross, flechette-type, flower shape, fylfot, netted shape, bar shaped, back-shaped or the like, purpose all be for make electric field evenly to around be evenly distributed, improved light extraction efficiency to a great extent.
The various kinds electrode of people's design all can be divided into two parts: a part is first electrode, as weld pad, another part is second electrode (extension electrode), make electric current better to diffusion all around, Fig. 1 has provided the figure of existing semiconductor light-emitting-diode (LED) cross electrode, the cross electrode comprises first electrode 1 and second electrode, 2, the first electrodes 1 and second electrode 2 all on ohmic contact layer 3, and the following of LED is bottom electrode (face metal electrode layer) 4.Though these designs can both be played good current expansion effect, but first electrode, 1 shared chip area large percentage, so there is quite a few electric current still to concentrate on the below of first electrode 1, and traditional LED electrode material is again opaque metal or metal alloy, this light overwhelming majority of sending with regard to the below of causing first electrode 1 is blocked, can not effectively utilize injection current, the current expansion of the LED electrode that conventional method is as shown in Figure 2 made.Institute is so that more electric current is to diffusion all around, and better utilization electric current and the light that sends become puzzlement people urgent problem.
Summary of the invention
The present invention is directed to the problems referred to above of the electrode existence of existing semiconductor light-emitting-diode (LED), provide a kind of electric current was fully used, but also can not cause the LED electrode structure that effectively utilizes electric current that voltage raises, a kind of manufacture method of this LED electrode is provided simultaneously.
The LED electrode structure that effectively utilizes electric current of the present invention is by the following technical solutions:
This effectively utilizes the LED electrode structure of electric current, below the LED electrode, be provided with part non-ohmic contact district, the area in non-ohmic contact district is the 10%--150% that will make first electrode area of electrode, and the area of that part of ohmic contact layer of removing when having only first electrode is for making the 10%--70% of electrode area.
The above-mentioned LED method for making its electrode that effectively utilizes electric current is:
After LED die making goes out ohmic contact layer, on ohmic contact layer, to make the position of electrode and get rid of the part ohmic contact layer, the cleaning of then removing photoresist, the area of that part of ohmic contact layer of removing is the 10%--150% that will make first electrode area of electrode, and the area of that part of ohmic contact layer of removing when having only first electrode is for making the 10%--70% of electrode area; On whole ohmic contact layer, comprise that part of removing, metal electrode layer on the evaporation according to a conventional method, that part of metal electrode layer outside the electrode pattern that erosion removal will be made; Final alloy forms ohmic contact on the ohmic contact layer of not getting rid of.
The shape of the part ohmic contact layer of removing can be circle, square or irregularly shaped.
The present invention makes around the more current direction, effectively improves the LED luminous efficiency.Compare with other methods that improve LED brightness, have simple to operately, implement easily, advantage such as reliability stability is high, and is applied widely.
Description of drawings
Fig. 1 is the pictorial diagram of existing semiconductor light-emitting-diode (LED) cross electrode.
Fig. 2 be among Fig. 1 along the cutaway view of A-A ' line, this figure has embodied the current expansion section of the LED electrode that conventional method makes.
Fig. 3 is the LED structural representation that has ohmic contact layer.
Fig. 4 is the LED structural representation behind the ohmic contact layer of removal first electrode below among Fig. 3.
Fig. 5 is the LED structural representation behind the evaporation metal electrode layer.
Fig. 6 is the LED electrode current expansion generalized section that the present invention makes.
Fig. 7 is the LED electrode current expansion generalized section of having only first electrode that the present invention makes.
Among the figure: 1, first electrode, 2, second electrode, 3, ohmic contact layer, 4, bottom electrode (face metal electrode layer), 5, active area, 6, metal electrode layer.
Embodiment
It is of the present invention that effectively to utilize the LED electrode structure of electric current be exactly to be provided with part non-ohmic contact district below the LED electrode.Below be that example is set forth LED method for making its electrode of the present invention with known cross electrode shown in Figure 1.
At first, on the ohmic contact layer 3 of LED shown in Figure 3, make the figure of the part ohmic contact layer 3 that will remove by lithography in the position that will make first electrode 1, wet method routinely or dry method are removed this part ohmic contact layer then, the ohmic contact layer material can be gallium phosphide, GaAs, gallium nitride, gallium arsenide phosphide, phosphorous nitride gallium etc., with the GaAs is example, chip is put into the volume proportion hydrogen peroxide: ammoniacal liquor: the GaAs corrosive liquid of water=1: 5: 1 teetertotters, observe the corrosion cleaning of removing photoresist after clean, obtain structure as shown in Figure 4.The area of the part ohmic contact layer of removing is the 10%-150% of first electrode area.The shape of the ohmic contact layer segment of removing can be circle, square or irregularly shaped.Then (comprise that part of removing) on ohmic contact layer 3 evaporation metal electrode layer 6 according to a conventional method, as Fig. 5, the material of metal electrode layer 6 can be metal and also can be metal alloy, is example with the nickel gold here.Adopt photoetching method to make cross electrode pattern shown in Figure 1 by lithography, put into quality proportioning iodine behind the development post bake: KI: the metallic solution corrosion nickel gold of water=5: 1: 15, rock gently, Halogen lamp LED is observed the corrosion cleaning of removing photoresist after clean down.Final alloy forms ohmic contact.The electrode structure of making as shown in Figure 6, the below of first electrode 1 is non-ohmic contact, the below of second electrode 2 forms ohmic contact by alloy, when electric current was flowed through, electric current can flow to the below of second electrode 2 by first electrode 1, through second electrode 2 active area beyond to first electrode, 1 below extending transversely, significantly reduced shading light, increase effective utilization of electric current, improved luminous efficiency, and can not cause the rising of voltage.
If when making the LED electrode that has only first electrode 1 (outside first electrode 1, not having extension electrode) with method of the present invention, as traditional circular electrode, can remove the part ohmic contact layer of first electrode, 1 below, make first electrode, 1 below of making partly form non-ohmic contact, part forms ohmic contact, the part ohmic contact layer shape of removing can be circle, square or irregularly shaped, and the area of that part of ohmic contact layer of removal is the 10%--70% of first electrode area.Electric current can be expanded downwards by the outer ring of first electrode in this case, and current direction as shown in Figure 7.
Method for making its electrode of the present invention has effectively utilized electric current, makes around the more current direction, has avoided shading light to a great extent, has improved light extraction efficiency.The LED photoelectric parameter comparing result that method for making its electrode of the present invention and conventional electrodes manufacture method are made is as follows: chip size 14mil, under other process conditions the same terms, measuring current 20mA, the LED brightness that the LED that adopts method for making its electrode of the present invention to make makes than the conventional electrodes manufacture method improves about 100mcd, and voltage is constant.
Experimental results show that the LED that the present invention makes, the LED that brightness is made than conventional method promotes more than 20%.And simple to operate, to implement easily, reliability stability is high, applied widely, is suitable for large-scale production.
The present invention also can be used for other semiconductor device except can be used for light-emitting diode.
Claims (3)
1. LED electrode structure that effectively utilizes electric current, it is characterized in that: below the LED electrode, be provided with part non-ohmic contact district, the area in non-ohmic contact district is the 10%--150% that will make first electrode area of electrode, and the area of that part of ohmic contact layer of removing when having only first electrode is for making the 10%--70% of electrode area.
2. the LED electrode structure that effectively utilizes electric current according to claim 1 is characterized in that: being shaped as of the ohmic contact layer of removal is circular, square or irregularly shaped.
3. described manufacture method of effectively utilizing the LED electrode structure of electric current of claim 1 is characterized in that:
After LED die making goes out ohmic contact layer, on ohmic contact layer, to make the position of electrode and get rid of the part ohmic contact layer, the cleaning of then removing photoresist, the area of that part of ohmic contact layer of removing is the 10%--150% that will make first electrode area of electrode, and the area of that part of ohmic contact layer of removing when having only first electrode is for making the 10%--70% of electrode area; On whole ohmic contact layer, comprise that part of removing, metal electrode layer on the evaporation according to a conventional method, that part of metal electrode layer outside the electrode pattern that erosion removal will be made; Final alloy forms ohmic contact on the ohmic contact layer of not getting rid of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010226992 CN101908592A (en) | 2010-07-15 | 2010-07-15 | Light-emitting diode (LED) electrode structure for effectively utilizing current and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010226992 CN101908592A (en) | 2010-07-15 | 2010-07-15 | Light-emitting diode (LED) electrode structure for effectively utilizing current and manufacturing method thereof |
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| CN101908592A true CN101908592A (en) | 2010-12-08 |
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| CN 201010226992 Pending CN101908592A (en) | 2010-07-15 | 2010-07-15 | Light-emitting diode (LED) electrode structure for effectively utilizing current and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845801A (en) * | 2016-06-13 | 2016-08-10 | 天津三安光电有限公司 | Light emitting diode and manufacturing method therefor |
| CN107958946A (en) * | 2017-11-17 | 2018-04-24 | 扬州乾照光电有限公司 | A kind of light-emitting diode chip for backlight unit for improving current expansion and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5789768A (en) * | 1997-06-23 | 1998-08-04 | Epistar Corporation | Light emitting diode having transparent conductive oxide formed on the contact layer |
| US20020028526A1 (en) * | 2000-09-04 | 2002-03-07 | Takahisa Kurahashi | Semiconductor light-emitting device |
| US6420732B1 (en) * | 2000-06-26 | 2002-07-16 | Luxnet Corporation | Light emitting diode of improved current blocking and light extraction structure |
| US20050082555A1 (en) * | 2003-10-15 | 2005-04-21 | United Epitaxy Company, Ltd. | Light-emitting semiconductor device having enhanced brightness |
-
2010
- 2010-07-15 CN CN 201010226992 patent/CN101908592A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5789768A (en) * | 1997-06-23 | 1998-08-04 | Epistar Corporation | Light emitting diode having transparent conductive oxide formed on the contact layer |
| US6420732B1 (en) * | 2000-06-26 | 2002-07-16 | Luxnet Corporation | Light emitting diode of improved current blocking and light extraction structure |
| US20020028526A1 (en) * | 2000-09-04 | 2002-03-07 | Takahisa Kurahashi | Semiconductor light-emitting device |
| US20050082555A1 (en) * | 2003-10-15 | 2005-04-21 | United Epitaxy Company, Ltd. | Light-emitting semiconductor device having enhanced brightness |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845801A (en) * | 2016-06-13 | 2016-08-10 | 天津三安光电有限公司 | Light emitting diode and manufacturing method therefor |
| CN107958946A (en) * | 2017-11-17 | 2018-04-24 | 扬州乾照光电有限公司 | A kind of light-emitting diode chip for backlight unit for improving current expansion and preparation method thereof |
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Application publication date: 20101208 |