CN106129208A - UV LED chips and manufacture method thereof - Google Patents
UV LED chips and manufacture method thereof Download PDFInfo
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- CN106129208A CN106129208A CN201610545536.0A CN201610545536A CN106129208A CN 106129208 A CN106129208 A CN 106129208A CN 201610545536 A CN201610545536 A CN 201610545536A CN 106129208 A CN106129208 A CN 106129208A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention discloses a kind of UV LED chips, including the epitaxial layer being mainly made up of substrate, n AlGaN layer, multiple quantum well layer, p AlGaN layer, p GaN layer, p-electrode and n-electrode, it is characterised in that: the p GaN layer on described p AlGaN is partially etched and forms the shallow table top with multiple island or perforate；The shallow table top of p GaN is provided with metal dots, and forms local Ohmic contact with Graphene.Relative to present technology, technical solutions according to the invention as diffusion layer by Graphene, are improve the migration of electronics, improve the uniformity of CURRENT DISTRIBUTION；By Metal Point Contact, reduce contact resistance, improve luminous efficiency；By etching GaN layer, reduce the absorption of ultraviolet band, improve overall ultraviolet light rate.
Description
Technical field
The invention belongs to the manufacture field of luminescent device, relate to one and there is p-GaN etching ledge structure and metal dots-stone
The UV LED chips of ink alkene composite construction p Ohmic contact.
Background technology
ITO, because of its high transmission rate and low sheet resistance, is widely used among transparent conductive material.But ITO itself
Sensitive for sour environment, frangible, in the presence of bronsted lowry acids and bases bronsted lowry, easily occur that ion spreads, its use is to manufacturer's environment
Working the mischief with health, meanwhile, ion is diffused in polymeric device insulating barrier, causes optical property to decline, even leaks
Conductance causes device failure.The more important thing is that ITO has stronger absorption to the light of ultraviolet band, so, find and replace ITO
Material and the making deep ultraviolet device of energy become a demand the most urgent.
For the problems referred to above, have been reported and use graphene composite structure as electrically conducting transparent electricity in uv-LED device
Pole.Graphene has high electron mobility, and fabulous light transmission, especially good in ultraviolet band performance.(Kim, D.H.,
Et al., Current Applied Physics 14:1176-1180 (2014)；Seo, T.H., et al., Applied
Physics Letters 103,051105 (2013)).
AlGaN is the main material of deep-UV light-emitting device, and AlGaN has wider bandwidth, meets well
The luminous demand of ultraviolet band.Exactly because but AlGaN energy gap is wider, p-type doped energy-band is relatively deep, and hole concentration is low,
The more difficult preparation of Ohmic contact.Compared with p-AlGaN, p-GaN energy gap is narrower, and Ohmic contact is relatively easy to prepare, therefore stone
Ink alkene composite construction and GaN have preferable Ohmic contact.The luminescent device using Graphene and GaN material to make has wider answering
Use prospect.
But, the ABSORPTION EDGE corresponding wavelength of GaN is 365nm, absorbs strong for the wavelength ultraviolet band light less than 365nm
Strong.The situation that light extraction efficiency is relatively low can be there is in the short wavelength UV luminescent device utilizing GaN to make.
Summary of the invention
For the deficiencies in the prior art, present invention is primarily targeted at offer one have high ultraviolet band light transmittance,
The UV LED chips of the p-type Ohmic contact of low contact resistance.
Meanwhile, present invention also offers the manufacture method of described UV LED chips.
For realizing object above, the scheme that the present invention uses is as follows:
A kind of ultraviolet semiconductor luminescence chip, including mainly by substrate, n-AlGaN layer, multiple quantum well layer, p-AlGaN layer,
The epitaxial layer of p-GaN layer composition, p-electrode and n-electrode, on described p-AlGaN layer, p-GaN layer is partially etched formation and has multiple
Island or the shallow table top of perforate；The shallow table top of p-GaN is provided with metal dots, is provided with graphene layer in metal dots, forms local
Ohmic contact, constitutes p-electrode or a part for p-electrode；
Concrete, described chip is positive assembling structure, vertical or inverted structure, and described metal dots and Graphene are collectively forming
The p Ohm contact electrode of bright conduction, is additionally provided with p pad thereon；
Or, described chip is vertical or inverted structure, and described metal dots and graphene layer are provided with reflecting layer, altogether
With constituting height reflection p Ohm contact electrode；
Further, described reflecting layer is Al or Ni/Al；
Preferably, described graphene layer is single-layer graphene or the multi-layer graphene of 2-50 layer.
Preferably, described metal dots diameter is in 1nm～109 μm.
Preferably, described metal dots dutycycle is 1%～50%.
Further, described metal dots is random distribution, or metal dots is dot matrix distribution, or is grid according to metal dots
Shape is distributed.
Preferably, described metal is Ag, Ni, or Ni/Ag, or Ni/Au.
The manufacture method of a kind of luminescent device, comprises the following steps:
Growing AIN or AlGaN cushion, n-AlGaN layer, multiple quantum well layer, p-AlGaN layer, p-GaN successively on substrate
The epitaxial layer of layer composition；
On p-GaN, metal level is deposited by evaporation or sputtering method, and by the method for annealing at p-GaN layer upper surface
Form metal dots, or form metal lattice or grid with photoetching method, then using on this metal level as mask etching p-
GaN, obtains the shallow table top of the p-GaN described in claim 1, and the perforate degree of depth is just to p-AlGaN layer or the deepest；
Graphene layer is transferred to chip surface and Metal Point Contact.
Relative to present technology, technical solutions according to the invention are by by metal dots and p-GaN Ohmic contact, fall
Low contact resistance；And the part of GaN layer is to p-AlGaN, and by the local complexity of metal dots, reduce p-GaN and metal
The point absorption to ultraviolet band；By Graphene as transparent current-diffusion layer, improve uniformity and the reduction of CURRENT DISTRIBUTION
Electrode absorption, Graphene has preferable block simultaneously, be conducive to improving device reliability..
In order to be fully understood from the purpose of the present invention, feature and effect, below with reference to accompanying drawing to the design of the present invention, tool
The technique effect of body structure and generation is described further.
Accompanying drawing explanation
Fig. 1 is the cross-sectional view of UV LED chips embodiment 1 of the present invention；
Fig. 2 is the cross-sectional view of UV LED chips embodiment 2 of the present invention；
Fig. 3 is UV LED chips metal surface of the present invention array structure schematic diagram；
Fig. 4 is UV LED chips metal surface of the present invention network schematic diagram；
Detailed description of the invention
With some cases that are embodied as, technical scheme is further described below in conjunction with the accompanying drawings.
Embodiment 1:
As it is shown in figure 1, a kind of UV LED chips, its luminous component includes the AlN of substrate 100 Epitaxial growth
Cushion 101, n-AlGaN layer 102, multiple quantum well layer 104, p-AlGaN layer 105 and p-GaN layer 106.In order to reduce p-GaN pair
The absorption of ultraviolet light, p-GaN layer 106 part is etched formation table top, and table top lower surface is p-AlGaN layer 105.The p-being etched
GaN layer 106 forms random distribution on p-AlGaN layer 105 surface, and metal dots 107 contacts with p-GaN layer 106 surface.Graphene
Layer 108 is covered in metal dots 107 surface, becomes current extending, and is collectively forming ohm of p-GaN with metal dots 107 and connects
Touch.
P-type electrode 109 covers on Graphene, and Graphene has perforate, so that the metal level of p-type electrode 109 is direct
Contact with p-AlGaN layer, strengthen the adhesiveness of electrode.Electric current passes through the current expansion effect of graphene layer 108 from p-electrode 109,
Extending transversely open and pass through metal dots 107 and p-GaN layer, be longitudinally injected in device.N-type electrode 103 and n-AlGaN layer 102
Form Ohmic contact.
In order to be better understood from luminescent device of the present invention, the one of this luminescent device described in detail below is preferably
Manufacture method.
Step 1: grown epitaxial layer: growing AIN cushion, n-AlGaN layer, multiple quantum well layer, p-the most successively
AlGaN layer, p-GaN layer；
Step 2: etching forms n contact hole: etches the epitaxial layer 106 of p-GaN, forms at least one etched hole, until institute
State etched hole and expose bottom n-AlGaN layer 102；
Step 3: making p Ohmic contact:
3-a, by evaporation or sputtering, combine photoetching, corrosion or stripping means, p-GaN deposits metallic film shape
Become figure, and form metal dots by the method for annealing at p-GaN layer upper surface, then perform etching in this metal dots,
To the perforate p-GaN layer described in claim 1, the perforate degree of depth is just to p-AlGaN layer or the deepest；
Graphene layer 108 is transferred to chip surface and covers metal dots 107 by 3-b, the method utilizing PMMA chemistry to shift；
3-c, use photoetching, lithographic method are by graphical for graphene layer 108, and Graphene only covers p polar semiconductor region, and
P-electrode pad locations perforate on Graphene；
Step 4: make p, n-electrode: by evaporation or sputtering, in conjunction with photoetching, corrosion or stripping means, at n contact hole
N Metal contact electrode 103 and p-electrode 109 is formed on n-AlGaN layer 102；
After completing above step, wafer i.e. forms multiple UV LED chips unit, by follow-up crystalline substance
Circle is thinning, cutting i.e. may separate out single UV LED chips.
Embodiment 2:
As in figure 2 it is shown, a kind of UV LED chips, its luminous component includes the AlN of substrate 100 Epitaxial growth
Cushion 101, n-AlGaN layer 102, multiple quantum well layer 104, p-AlGaN layer 105 and p-GaN layer 106.In order to reduce p-GaN pair
The absorption of ultraviolet light, p-GaN layer 106 part is etched formation table top, and table top lower surface is p-AlGaN layer 105.The p-being etched
GaN layer 106 forms random distribution on p-AlGaN layer 105 surface, and metal dots 107 contacts with p-GaN layer 106 surface.Graphene
Layer 108 is covered in metal dots 107 surface, becomes current extending and metal diffusion barrier layer, and common with metal dots 107
Form the Ohmic contact of p-GaN.
Reflective metal layer (Al, Ti/Al or Ni/Al) 200 covers on Graphene, and Graphene has perforate, so that
Reflective metal layer 200 contacts with n-AlGaN layer, strengthens the adhesiveness of whole electrode.N-type electrode 103 and n-AlGaN layer 102 shape
Become Ohmic contact.It is further provided with ubm layer 202, by salient point 201 and substrate on reflecting layer 200 and n-electrode 103
203 connect
In order to be better understood from luminescent device of the present invention, the one of this luminescent device described in detail below is preferably
Manufacture method.
Step 1: grown epitaxial layer: growing AIN cushion, n-AlGaN layer, multiple quantum well layer, p-the most successively
AlGaN layer, p-GaN layer；
Step 2: etching forms n contact hole: etches the epitaxial layer 106 of p-GaN, forms at least one etched hole, until institute
State etched hole and expose bottom n-AlGaN layer 102；
Step 3: making p Ohmic contact and reflecting layer:
3-a, by evaporation or sputtering, combine photoetching, corrosion or stripping means, p-GaN deposits metallic film shape
Become figure, and form metal dots by the method for annealing at p-GaN layer upper surface, then perform etching in this metal dots,
To the perforate p-GaN layer described in claim 1, the perforate degree of depth is just to p-AlGaN layer or the deepest；
Graphene layer 108 is transferred to chip surface and covers metal dots 107 by 3-b, the method utilizing PMMA chemistry to shift；
3-c, use photoetching, lithographic method are by graphical for graphene layer 108, and Graphene only covers p polar semiconductor region, and
In the position perforate of Graphene upper part；
3-d, evaporate on p district graphene layer or sputter Al (or Ti/Al, Ni/Al) make reflecting layer 200；
Step 4: make n-electrode: by evaporation or sputtering, in conjunction with photoetching, corrosion or stripping means, at the n-of n contact hole
N Metal contact electrode 103 is formed in AlGaN layer 102；
Step 5: make ubm layer: by evaporation or sputtering, in conjunction with photoetching, corrosion or stripping means, in p-electrode
Ubm layer 202 is formed in 109 and p reflecting layer, districts；
After completing above step, wafer i.e. forms multiple upside-down mounting UV LED chips unit, by follow-up
Wafer thinning, cutting i.e. may separate out single upside-down mounting UV LED chips；Further, this chip can be by convex
Point 201 is bonded with substrate flip-chip.
Embodiment 3:
The present embodiment chip structure is with the difference of embodiment 1, and the metal dots 107 in embodiment 1 is annealing balling shape
Become, for random distribution, and cover in p-GaN layer 106 as etch mask, corresponding p-GaN surface in embodiment 3
Metal is being distributed with Fig. 3 lattice-like of being deliberately formed, and covers in p-GaN layer 106 as etching mask layer, so that p-
The shape of GaN layer 106 is also distributed for lattice-like.
From the difference of embodiment 1 manufacture method, the manufacture method of embodiment 3 is only that its step 3-a details is different, specifically
As follows:
Step 3-a, by evaporation or sputtering, combine photoetching, corrosion or stripping means, on p-GaN deposit metallic film
And form lattice-like figure 300, then performing etching for mask with this metallic film, obtaining opening described in claim 1
Hole p-GaN layer, the perforate degree of depth is just to p-AlGaN layer or the deepest.
Embodiment 4:
The present embodiment chip structure is with the difference of embodiment 1, and the metal dots 107 in embodiment 1 is a sheet of metal
Annealing balling is formed, and for random distribution, and is paved with whole big region, and covers in p-GaN layer 106 as etch mask
On, corresponding metal dots 107 in example 4 is formed for grid-shaped metal annealing balling, is random distribution in grid, grid
Not having outward metal dots, metal dots covers in p-GaN layer 106 as etch mask, so that the shape of p-GaN layer 106 is also
Lattice-like is distributed.
From the difference of embodiment 1 manufacture method, the manufacture method of embodiment 3 is only that its step 3-a details is different, specifically
As follows:
Step 3-a, by evaporation or sputtering, combine photoetching, corrosion or stripping means, on p-GaN deposit metallic film
And form lattice-like pattern 400, and grid inner metal layer surface in p-GaN layer is made to form metal dots, so by the method for annealing
After perform etching in this metal dots, obtain the perforate p-GaN layer described in claim 1, the perforate degree of depth is just to p-AlGaN
Layer or the deepest.
The preferred embodiment of the present invention described in detail above.The invention is not limited in above-mentioned embodiment, as
Really various changes or deformation to the present invention are without departing from the spirit and scope of the present invention, if these are changed and deformation belongs to this
Within the scope of bright claim and equivalent technologies, then the present invention is also intended to comprise these changes and deformation.
Claims (10)
1. a ultraviolet semiconductor luminescence chip, including main by substrate, n-AlGaN layer, multiple quantum well layer, p-AlGaN layer, p-
The epitaxial layer of GaN layer composition, p-electrode and n-electrode, it is characterised in that:
P-GaN layer on described p-AlGaN layer is partially etched and forms the shallow table top with multiple island or perforate；
The shallow table top of p-GaN is provided with metal dots, is provided with graphene layer in metal dots, forms local Ohmic contact, constitutes p-electrode
Or a part for p-electrode.
Ultraviolet semiconductor luminescence chip the most according to claim 1, it is characterised in that: described chip is positive assembling structure, hangs down
Straight or inverted structure, described metal dots and Graphene are collectively forming the p Ohm contact electrode of electrically conducting transparent, are additionally provided with p thereon
Pad.
Ultraviolet semiconductor luminescence chip the most according to claim 1, it is characterised in that: described chip is vertical or upside-down mounting
Structure, described metal dots and graphene layer are provided with reflecting layer, collectively form high reflection p Ohm contact electrode.
Ultraviolet semiconductor luminescence chip the most according to claim 1, it is characterised in that: described graphene layer is mono-layer graphite
Alkene or the multi-layer graphene of 2-50 layer.
Ultraviolet semiconductor luminescence chip the most according to claim 1, it is characterised in that: described metal dots diameter at 1nm～
109μm。
Ultraviolet semiconductor luminescence chip the most according to claim 1, it is characterised in that: described metal dots dutycycle is 1%
～50%.
Ultraviolet semiconductor luminescence chip the most according to claim 1, it is characterised in that: described metal dots is random distribution,
Or metal level is dot matrix distribution, or is distributed in grid according to metal level.
Ultraviolet semiconductor luminescence chip the most according to claim 1, it is characterised in that: described metal is Ag, Ni, or
Ni/Ag, or Ni/Au.
Ultraviolet semiconductor luminescence chip the most according to claim 3, it is characterised in that: described reflecting layer be Al, Ti/Al or
Person Ni/Al.
10. the manufacture method of a ultraviolet semiconductor luminescence chip, it is characterised in that comprise the following steps:
Growing AIN or AlGaN cushion, n-AlGaN layer, multiple quantum well layer, p-AlGaN layer, p-GaN layer group successively on substrate
The epitaxial layer become；
On p-GaN, deposit metal level by evaporation or sputtering method, and formed at p-GaN layer upper surface by the method for annealing
Metal dots, or form metal lattice or grid with photoetching method, then using on this metal level as mask etching p-GaN,
To the shallow table top of the p-GaN described in claim 1, the perforate degree of depth is just to p-AlGaN layer or the deepest；
Graphene layer is transferred to chip surface and Metal Point Contact.
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| CN201610545536.0A CN106129208A (en) | 2016-07-07 | 2016-07-07 | UV LED chips and manufacture method thereof |
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| CN201610545536.0A CN106129208A (en) | 2016-07-07 | 2016-07-07 | UV LED chips and manufacture method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876532A (en) * | 2017-01-13 | 2017-06-20 | 南京大学 | A kind of high light-emitting rate, the UV LED of high reliability and its manufacture method |
| CN109065680A (en) * | 2018-07-16 | 2018-12-21 | 马鞍山杰生半导体有限公司 | A kind of epitaxial structure of ultraviolet LED and preparation method thereof |
| CN112420887A (en) * | 2020-11-20 | 2021-02-26 | 广东省科学院半导体研究所 | Deep ultraviolet LED device and manufacturing method thereof |
| CN112563381A (en) * | 2020-12-29 | 2021-03-26 | 中国科学院长春光学精密机械与物理研究所 | Deep ultraviolet light-emitting diode with low ohmic contact resistance and preparation method thereof |
| CN114171652A (en) * | 2020-09-11 | 2022-03-11 | 北京大学 | Structure for improving AlGaN-based DUV-LED light extraction efficiency and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106876532A (en) * | 2017-01-13 | 2017-06-20 | 南京大学 | A kind of high light-emitting rate, the UV LED of high reliability and its manufacture method |
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| CN114171652A (en) * | 2020-09-11 | 2022-03-11 | 北京大学 | Structure for improving AlGaN-based DUV-LED light extraction efficiency and application thereof |
| CN114171652B (en) * | 2020-09-11 | 2024-04-19 | 北京大学 | Structure for improving light extraction efficiency of AlGaN-based DUV-LED and application thereof |
| CN112420887A (en) * | 2020-11-20 | 2021-02-26 | 广东省科学院半导体研究所 | Deep ultraviolet LED device and manufacturing method thereof |
| CN112563381A (en) * | 2020-12-29 | 2021-03-26 | 中国科学院长春光学精密机械与物理研究所 | Deep ultraviolet light-emitting diode with low ohmic contact resistance and preparation method thereof |
| CN112563381B (en) * | 2020-12-29 | 2022-04-05 | 中国科学院长春光学精密机械与物理研究所 | Deep ultraviolet light-emitting diode with low ohmic contact resistance and preparation method thereof |
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Application publication date: 20161116 |
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