CN106876532A - A kind of high light-emitting rate, the UV LED of high reliability and its manufacture method - Google Patents
A kind of high light-emitting rate, the UV LED of high reliability and its manufacture method Download PDFInfo
- Publication number
- CN106876532A CN106876532A CN201710033552.6A CN201710033552A CN106876532A CN 106876532 A CN106876532 A CN 106876532A CN 201710033552 A CN201710033552 A CN 201710033552A CN 106876532 A CN106876532 A CN 106876532A
- Authority
- CN
- China
- Prior art keywords
- layer
- graphene
- metal
- contact layer
- high reliability
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 70
- 239000002184 metal Substances 0.000 claims abstract description 70
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 62
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 61
- 238000012546 transfer Methods 0.000 claims abstract description 34
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 15
- 239000012298 atmosphere Substances 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 238000002310 reflectometry Methods 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 238000000137 annealing Methods 0.000 claims description 22
- 239000010931 gold Substances 0.000 claims description 22
- 229910052737 gold Inorganic materials 0.000 claims description 19
- 238000003780 insertion Methods 0.000 claims description 18
- 230000037431 insertion Effects 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 238000010276 construction Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000002070 nanowire Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 238000009825 accumulation Methods 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 239000002096 quantum dot Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910002704 AlGaN Inorganic materials 0.000 description 14
- 239000000758 substrate Substances 0.000 description 10
- 150000001336 alkenes Chemical class 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000004575 stone Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000013517 stratification Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 241001465805 Nymphalidae Species 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of high light-emitting rate, the ultraviolet semiconductor light emitting diode of high reliability, including a LED chip, Graphene transparency conducting layer, metal conducting layer and conductive reflective are sequentially provided with the LED chip in p-type layer, Graphene transparency conducting layer is characterised by that its Graphene stacking by repeatedly shifting is formed, and Ohmic contact is formed between the Graphene transparency conducting layer and metal conducting layer and p-type layer.By single or multiple lift Graphene, repeatedly transfer is formed the Graphene transparency conducting layer of the multiple transfer, and the metal conducting layer is formed on graphene layer or between multi-layer graphene.The present invention reduces surface resistance by repeatedly transfer stacked graphene, improves luminous efficiency；Metal conducting layer formation process of the invention, the 2min that anneals under the conditions of 400 DEG C in nitrogen, the oxygen mix atmosphere makes contact resistivity be down to 4.3*10‑4Ω·cm‑2, while so that Al reflecting layer reflectivity in 450nm maintains 90%.
Description
Technical field
The invention belongs to photoelectron technical field, it is related to a kind of ultraviolet semiconductor luminescent device and its manufacture method.
Background technology
UV LED has the potential advantages of small volume, long lifespan, efficiency high, environmental protection, energy-conservation, in Industrial Solid
The aspect such as change, sterilization, Water warfare, medical treatment and biochemistry, high-density optical record replaces the purples such as existing mercury lamp, gas laser
Outer light source, there is important application prospect and the wide market demand.LED device is divided into formal dress, upside-down mounting and vertical junction
Structure.
Upside-down mounting can have advantages below with vertical stratification by adding metallic conductive reflective layer：By metallic conductive reflective layer
As current extending, electric current is set to be spread evenly from electrode to active area；Heat is directly transferred to thermal conductivity simultaneously higher
Substrate, then by radiator heat-dissipation, its thermal resistance is more much smaller than positive assembling structure therefore more potential and application value.
The ultraviolet LED of upside-down mounting and vertical stratification need to be using the p-type ohmic contact metal layer of high reflection, so as to improve device light
Effect.High reflection metal ohmic contact such as Ag commonly used in visible light wave range etc. is greatly reduced in the reflectivity of ultraviolet band, main
Only Al still has reflectivity higher in ultraviolet band in wanting metal.However, Al and p-GaN or p-AlGaN can not form ohm connecing
Touch.It is that Al is covered in p-GaN the or p-AlGaN Ohmic contacts of electrically conducting transparent by the use of Al as the method for high reflection layer, this
In the technology of kind, it is desirable to have effective to stop that Al is destroyed to Ohmic contact caused by the diffusion of electrically conducting transparent ohmic contact layer.Specially
Sharp CN104810455A uses the electrically conducting transparent ohmic contact layer of Graphene-Ag composite constructions, wherein, there is Graphene stop to make
With, can with so that lift its reliability, but there are the following problems for it：First there is multidomain structure in Graphene, exist between farmland
Space, Al can pass through space and migrate, and meeting fast degradation causes it to spread when especially more than 100 DEG C, destroys p Ohmic contacts,
Device reliability is made a big impact；Al and Graphene adhesion are poor simultaneously, easily peel off, and Al can be solved currently without technology
With the sticking problem of Graphene, so as to significantly limit the preparation of flip device.
The content of the invention
For deficiency of the prior art, the main object of the present invention is to provide for a kind of with high-transmission rate, bottom surface electricity
Resistance, high reflection, the UV LED of good p-type Ohmic contact.Another object of the present invention is to provide for a kind of system
The method for making the UV LED.
To realize that the present invention provides the purpose of high light-emitting rate, the UV LED of high reliability, what the present invention was used
Technical scheme is：
A kind of UV LED device of high light-emitting rate, high reliability, including mainly by n-layer, quantum well layer and p
The epitaxial structure layer of type layer composition, is sequentially provided with P-contact layer, Graphene photic zone and conductive reflective, the Europe in p-type layer
Nurse contacts layer segment blanket p-type layer surface, and than being less than 30%, the Graphene photic zone is by the Graphene heap that repeatedly shifts for covering
It is folded to form, all it is Ohmic contact between the P-contact layer and p-type layer, between P-contact layer and Graphene photic zone；
Preferably, the ohmic contact layer includes Ag, or Au, or Ni, or above-mentioned metal alloy structure or many
Rotating fields；
Preferably, it is described to constitute the insertion gold also covered comprising part between euphotic at least two layer graphenes of Graphene
Category layer, metal level covering ratio is less than 10%；Preferably, it is described insertion metal conducting shell be tiling Ag or Au nano dot or
Person's nano wire；It is further preferred that the particle diameter of Ag or Au nano dots described in the metal inserting layer be 10nm~1 μm, Ag or
A diameter of 5~100nm of Au nano wires, length are 5~100 μm；
Preferably, the conductive reflective thickness is 0.1~3 μm, and the conductive reflective has electric conductivity high
And reflectivity, the preferred Al of conducting reflective layer material.
To realize another object of the present invention, the technical solution adopted by the present invention is：
The manufacture method of high light-emitting rate, the UV LED device of high reliability, comprises the following steps：
Step S1, Grown epitaxial structure layer, epitaxial layer successively include p-type layer, n-layer and quantum well layer；
Step S2, the processing such as perform etching for epitaxial structure layer, form n contact holes；
Step S3, in p-type layer by evaporation or sputter, and annealing form P-contact layer；
Step S4, in P-contact layer by repeatedly transfer Graphene stack to form Graphene photic zone；
Step S5, on Graphene photic zone by evaporating high reflecting metal conductive reflective, it is preferred that the high reflection
Conductive metal layer is more than 150nm aluminium；
Step S6, the preparation n areas ohmic contact layer on n contact holes；
Step S7, on p areas high reflecting metal conductive layer and n areas ohmic contact layer p, n-electrode are formed respectively
Preferably, P-contact layer described in step S3 is Ag, Au, Ni individual layer of 1~5nm, or above-mentioned metallic multilayer structures exist
Nitrogen or nitrogen are formed with short annealing in oxygen mix atmosphere, and accumulation of metal after annealing, coverage rate is reduced to less than 30%；
Or, step S3 is comprised the steps of：Ag, Au, Ni, ITO of step S3a, 3~100nm of evaporation or sputtering
Single or multiple lift, circular or polygon metal dots array, metal spot diameter or right are formed by photoetching with corrosion or stripping technology
Angular length degree is 2~10 μm, and adjacent metal dot center distance is twice of metal spot diameter or diagonal length or more；Step S3b,
In nitrogen or nitrogen and short annealing in oxygen mix atmosphere；
Preferably, step S4 is comprised the following steps：On S4a, transfer single or multiple lift Graphene to P-contact layer；S4b、
Transfer Graphene on also have insertion metal level, insertion metal level for 1-2nm Ni, Au or Ti, or above-mentioned metal alloy
Structure or sandwich construction；S4c, repetition S4a~S4b or S4a, the transfer number of plies needed for reaching；Additionally, the insertion metal of step S4b
The subsequent technique of layer also includes short annealing under nitrogen atmosphere.
Compared with prior art, advantages of the present invention includes：
(1) present invention stops that the ability that Al spreads also is greatly reinforced by repeatedly transfer Graphene, improves connecing for device
Tactile, reflecting properties and reliability；
(2) covering of P contact layers is than being less than 30%, it is ensured that it has light transmission rate very high while forming Ohmic contact；
(3) preferred scheme improves stone by increasing insertion metal level between graphene layer and between Graphene and Al
Electric connection between black alkene layer, and solve the problems, such as the poor adhesion of Graphene and Al reflecting layer.
In sum so that the ultraviolet semiconductor luminescent device for being formed has high-transmission rate, outside amount compared with the prior art
Sub- efficiency high, light extraction efficiency are high, characteristic, cut-in voltage are low, thermal diffusivity is good, high reliability for good p-type Ohmic contact etc..
Brief description of the drawings
Fig. 1 is the structural representation of multiple transfer Graphene upside-down mounting GaN base UV LED chip in the embodiment of the present invention 1；
Fig. 2 is the structure of the direct multiple transfer Graphene upside-down mounting GaN base UV LED chip of annealing in the embodiment of the present invention 2
Schematic diagram；
Fig. 3 is the multiple transfer Graphene upside-down mounting GaN base UV LED chip containing insertion metal level in the embodiment of the present invention 3
Structural representation；
Fig. 4 is the structural representation of P-contact layer.
Specific embodiment
In order that the object, technical solutions and advantages of the present invention become more apparent, describe in detail with reference to embodiments.
It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not intended to limit the present invention.
Embodiment 1
Reference picture 1, this GaN base ultraviolet LED structure is main by Sapphire Substrate 101, and in the epitaxial layer of Grown,
Contact electrode composition.From substrate up, epitaxial layer includes successively：AlN cushions 102, n-AlGaN electronic shell 103, quantum well layer
104, p-type layer 105.After epitaxial growth, epitaxial layer is etched out table top and n contact holes, and mesa surfaces are former epi-layer surface, n
Contact hole surface is n-AlGaN layers.P-contact layer 106 is disposed with table top, repeatedly the Graphene of transfer stacks the stone to be formed
Black alkene photic zone 107 and conductive reflective 108, and p-type electrode 109, collectively form the reflective ohmic contact electrode of p-type layer.
Wherein, P-contact layer 106 is metal dots array, and metal spot diameter or diagonal length are 2~10 μm, adjacent metal dot center distance
Twice for metal spot diameter or diagonal length or more.N-shaped Ohm contact electrode 110 is provided with n contact holes.
The manufacturing step of the GaN base UV LED chip described further below：
Step S1：In Sapphire Substrate 101, using MOCVD techniques, grown epitaxial layer successively, epitaxial layer includes successively
AlN cushions 102, n-AlGaN electronic shell 103, InGaN/AlGaN multiple quantum well layers 104, AlGaN p-type layers 105.
Step S2, be etched to n-AlGaN layers from p-AlGaN layers by photoetching and etching technics, formed n-AlGaN table tops and
N contact holes；
The Ag of step S3a, evaporation 3nm, circular or polygon metal dots array, metal are formed by photoetching and etching process
Spot diameter or diagonal length are 2~10 μm, adjacent metal dot center distance for metal spot diameter or diagonal length twice or with
On, it is distributed with Fig. 4 lattice-likes, wherein 41 is metal dots, 42 is p-type layer；
Step S3b, the short annealing in nitrogen；
Contact layer can be replaced Ag, Au, Ni, ITO individual layer or many of 3~100nm of evaporation or sputtering in above step S3a
Layer, annealing can be replaced the short annealing in nitrogen and oxygen mix atmosphere in step S3b.
Step S4, in P-contact layer stack to form Graphene photic zone 107 by the Graphene of multiple transfer；Specifically such as
Under：
Graphene transfer method can be wet method transfer or dry method transfer, and wet method is displaced through is gathered using organic material
Methyl methacrylate (PMMA) or dimethione (PDMS) as transfer medium etched the matrix method, dry method uses
Roll To Roll or pressure sintering (Hot pressing) (bibliography：Efficient Transfer of Large-
Area Graphene Films onto Rigid Substrates by Hot Pressing.(2012).Acs Nano 6
(6)：5360-5365.).It is preferred using wet method be displaced through by the use of organic material polymethyl methacrylate (PMMA) as
The etched the matrix method of transfer medium, contact layer is transferred to by monoatomic layer or polyatom layer graphene, is then carried out again next time
Transfer, transfer number is controlled at 2-5 times, preferably 3 times, forms Graphene photic zone 107.
Step S5, on Graphene photic zone by evaporate high reflecting metal formed conductive reflective 108, it is preferred that institute
High reflection conductive metal layer is stated for more than 150nm aluminium；
Step S6, with photoetching, stripping, annealing method n areas ohmic contact layer is prepared on n contact holes, contact material is
Ti/Al, Cr/Al or Cr/Au；
Step S7, with PECVD methods sample surfaces deposit SiO2 passivation layers, with photoetching, caustic solution over the passivation layer
Perforate, exposes the metal level under p, n-electrode；Using electron beam evaporation or sputtering sedimentation electrode metal, preferably Ti (50nm)/Au
(1000nm), with reference to photoetching, stripping means, forms p, n metal electrode 109,110 above passivation layer opening；
Step S8, further, thinning, sliver is carried out by epitaxial wafer, forms single chip.
The present embodiment is stopping that the ability that Al spreads also is greatly reinforced by repeatedly transfer Graphene, improves connecing for device
Tactile, reflecting properties and reliability；It is distributed by being lithographically formed the dot matrix of P-contact layer simultaneously, P-contact layer is covered for part, is covered
Lid is than being less than 25%, it is ensured that it has light transmission rate very high while forming Ohmic contact.
Embodiment 2
Reference picture 2, this GaN base ultraviolet LED structure is main by Sapphire Substrate 201, and in the epitaxial layer of Grown,
Contact electrode composition.From substrate up, epitaxial layer includes successively：AlN cushions 202, n-AlGaN electronic shell 203, quantum well layer
204, p-type layer 205.After epitaxial growth, epitaxial layer is etched out table top and n contact holes, and mesa surfaces are former epi-layer surface, n
Contact hole surface is n-AlGaN layers.P-contact layer 206 is disposed with table top, repeatedly the Graphene of transfer stacks the stone to be formed
Black alkene photic zone 207 and conductive reflective 208, and p-type electrode 209, collectively form the reflective ohmic contact electrode of p-type layer.
Wherein P-contact layer 206 is the metal dots of random distribution, and N-shaped Ohm contact electrode 210 is provided with n contact holes.
The present embodiment is as described below with the difference of the structure and technique of embodiment 1：
P-contact layer in embodiment 1 is Ag, Au, Ni, ITO single or multiple lift for evaporating or sputtering 3~100nm, by light
Carve and form circular or polygon metal dots array with corrosion or stripping technology.By forming metal dots array after photoetching with corrosion
Afterwards, further P-contact layer is formed with short annealing in oxygen mix atmosphere in nitrogen or nitrogen.
Embodiment 2 is with the difference of the structure of embodiment 1：Embodiment 2 does not form P-contact layer rule row as shown in Figure 4
The metal dots array of cloth, but aggregation forms random metal dots after thin metal layer is annealed.The metal be Ag, Ni or
Au, metal layer thickness is 1~3nm before annealing, and accumulation of metal forms the metal dots of nano-scale after annealing, and metal dot coverage is low
In 30%.
Embodiment 2 is with the difference of the technique of embodiment 1：The step S3 of embodiment 2 is：
The Ag of step S3a, evaporation 3nm；
Step S3b, the short annealing in nitrogen；
Contact layer can be replaced Ag, Au, Ni single or multiple lift of 1~3nm of evaporation or sputtering, step in above step S3a
Annealing can be replaced the short annealing in nitrogen and oxygen mix atmosphere in rapid S3b.
Other processing steps are identical with embodiment 1.
Embodiment 3
Reference picture 3, this GaN base ultraviolet LED structure is main by Sapphire Substrate 301, and in the epitaxial layer of Grown,
Contact electrode composition.From substrate up, epitaxial layer includes successively：AlN cushions 302, n-AlGaN electronic shell 303, quantum well layer
304, p-type layer 305.After epitaxial growth, epitaxial layer is etched out table top and n contact holes, and mesa surfaces are former epi-layer surface, n
Contact hole surface is n-AlGaN layers.P-contact layer 306 is disposed with table top, repeatedly the Graphene of transfer stacks the stone to be formed
Black alkene photic zone 307, wherein 307a, 307b, 307c are the Graphene of transfer, also have insertion metal level on transfer Graphene
308 (308a, 308b, 308c), conductive reflective 309, and p-type electrode 310, collectively form the reflective ohmic contact of p-type layer
Electrode.Wherein N-shaped Ohm contact electrode 311 is provided with n contact holes.
The preparation method of embodiment 3 is with the difference of the structure of embodiment 1：Increase insertion in graphene layer in step s 4
Metal level 308 (308a, 308b, 308c).Comprised the following steps in step S4：
On S4a, transfer single or multiple lift Graphene to P-contact layer；
S4b, transfer Graphene on also have insertion metal level, insertion metal level for 1-2nm Ni, Au or Ti, Huo Zheshang
State the alloy structure or sandwich construction of metal；
S4c, repetition S4a~S4b or S4a, the transfer number of plies needed for reaching.
Additionally, the subsequent technique of the insertion metal level of step S4b also includes nitrogen atmosphere, or argon gas and hydrogen mixed gas atmosphere
In lower short annealing.
Other processing steps are identical with embodiment 1.
The present embodiment can improve graphite by increasing insertion metal level between graphene layer and between Graphene and Al
Electric connection between alkene layer, and improve the adhesiveness of Graphene and Al reflecting layer.
In above 3 embodiments, using the inverted structure from Sapphire Substrate side light extraction, light is greatly reduced
Loss, increased light emission rate；Stop that the ability of Al diffusions is also greatly reinforced using the method for repeatedly transfer Graphene simultaneously, make it
Ohmic contact is more likely formed, reliability is improve, in addition three above embodiment also all has low turn-on voltage, height radiating
Property, the advantages of external quantum efficiency is high.
Only it is the preferred embodiment of the present invention above in association with the embodiment described by accompanying drawing, and not to guarantor of the invention
The restriction of scope is protected, any improvement done based on spirit of the invention all ought to be within the scope of the present invention.
Claims (10)
1. the UV LED device of a kind of high light-emitting rate, high reliability, including mainly by n-layer, quantum well layer and p-type
The epitaxial structure layer of layer composition, is sequentially provided with P-contact layer, Graphene photic zone and conductive reflective in p-type layer, and its feature exists
In the Ohmic contact layer segment blanket p-type layer surface, than being less than 30%, the Graphene photic zone is by repeatedly shifting for covering
Graphene stacking is formed, and is all Ohmic contact between the P-contact layer and p-type layer, between P-contact layer and Graphene photic zone.
2. ultraviolet semiconductor luminescent device according to claim 1, it is characterised in that the ohmic contact layer includes Ag, or
Person Au, or Ni, or above-mentioned metal alloy structure or sandwich construction.
3. the UV LED device of a kind of high light-emitting rate according to claim 1, high reliability, it is characterised in that
Described to constitute the insertion metal level also covered comprising part between euphotic at least two layer graphenes of Graphene, the metal level covers
Lid ratio is less than 10%.
4. the UV LED device of a kind of high light-emitting rate according to claim 3, high reliability, it is characterised in that
The insertion metal conducting shell is the nano dot or nano wire of the Ag or Au of tiling.
5. the UV LED device of a kind of high light-emitting rate according to claim 4, high reliability, it is characterised in that
The particle diameter of Ag or Au nano dots described in the metal inserting layer be 10nm~1 μm, Ag or Au nano wires a diameter of 5~
100nm, length are 5~100 μm.
6. the UV LED device of a kind of high light-emitting rate according to claim 1, high reliability, it is characterised in that
The conductive reflective thickness is 0.1~3 μm, and the conductive reflective has electric conductivity and reflectivity high, conductive anti-
Penetrate the preferred Al of layer material.
7. high light-emitting rate, the manufacture method of the UV LED device of high reliability, it is characterised in that including following step
Suddenly：
Step S1, Grown epitaxial structure layer, epitaxial layer successively include p-type layer, n-layer and quantum well layer；
Step S2, the processing such as perform etching for epitaxial structure layer, form n contact holes；
Step S3, in p-type layer by evaporation or sputter, and annealing form P-contact layer；
Step S4, in P-contact layer by repeatedly transfer Graphene stack to form Graphene photic zone；
Step S5, on Graphene photic zone by evaporating high reflecting metal conductive reflective, it is preferred that the high reflection is conductive
Metal level is more than 150nm aluminium；
Step S6, the preparation n areas ohmic contact layer on n contact holes；
Step S7, on p areas high reflecting metal conductive layer and n areas ohmic contact layer p, n-electrode are formed respectively.
8. a kind of high light-emitting rate according to claim 7, the manufacture method of the UV LED device of high reliability,
It is characterized in that：P contact layer described in step S3 is Ag, Au, Ni individual layer of 1~5nm, or above-mentioned metallic multilayer structures in nitrogen or
Nitrogen is formed with short annealing in oxygen mix atmosphere, and accumulation of metal after annealing, coverage rate is reduced to less than 30%.
9. a kind of high light-emitting rate according to claim 7, the manufacture method of the UV LED device of high reliability,
It is characterized in that：
Step S3 is comprised the steps of：
Ag, Au, Ni, ITO single or multiple lift of step S3a, 3~100nm of evaporation or sputtering, by photoetching and corrosion or stripping work
Skill forms circular or polygon metal dots array, and metal spot diameter or diagonal length are 2~10 μm, adjacent metal dot center distance
Twice for metal spot diameter or diagonal length or more；
Step S3b, the short annealing in nitrogen or nitrogen and oxygen mix atmosphere.
10. a kind of high light-emitting rate according to claim 7, the manufacturer of the UV LED device of high reliability
Method, it is characterised in that：
Step S4 is comprised the following steps：
On S4a, transfer single or multiple lift Graphene to P-contact layer；
S4b, there is insertion metal level on transfer Graphene, insertion metal level is Ni, Au or Ti of 1-2nm, or above-mentioned gold
The alloy structure or sandwich construction of category；
S4c, repetition S4a~S4b or S4a, the transfer number of plies needed for reaching.
Additionally, the subsequent technique of the insertion metal level of step S4b also includes short annealing under nitrogen atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710033552.6A CN106876532B (en) | 2017-01-13 | 2017-01-13 | The UV LED and its manufacturing method of a kind of high light-emitting rate, high reliability |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710033552.6A CN106876532B (en) | 2017-01-13 | 2017-01-13 | The UV LED and its manufacturing method of a kind of high light-emitting rate, high reliability |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106876532A true CN106876532A (en) | 2017-06-20 |
| CN106876532B CN106876532B (en) | 2019-01-25 |
Family
ID=59158483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710033552.6A Active CN106876532B (en) | 2017-01-13 | 2017-01-13 | The UV LED and its manufacturing method of a kind of high light-emitting rate, high reliability |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106876532B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107799657A (en) * | 2016-08-31 | 2018-03-13 | 乐金显示有限公司 | Organic illuminating element and display device with light-emitting component with this |
| CN108011002A (en) * | 2017-11-30 | 2018-05-08 | 广东省半导体产业技术研究院 | A kind of UV LED chip production method |
| EP3675156A1 (en) * | 2018-12-28 | 2020-07-01 | Palo Alto Research Center Incorporated | Method and system for mass assembly of 2-d materials |
| CN112885937A (en) * | 2020-12-30 | 2021-06-01 | 华灿光电（浙江）有限公司 | Preparation method of P electrode of light-emitting diode chip with vertical structure |
| CN113066910A (en) * | 2021-03-22 | 2021-07-02 | 华南师范大学 | Blue light semiconductor device and preparation method thereof |
| CN113745385A (en) * | 2021-07-28 | 2021-12-03 | 厦门士兰明镓化合物半导体有限公司 | LED chip with vertical structure and manufacturing method thereof |
| CN114171652A (en) * | 2020-09-11 | 2022-03-11 | 北京大学 | Structure for improving AlGaN-based DUV-LED light extraction efficiency and application thereof |
| CN115206918A (en) * | 2022-07-20 | 2022-10-18 | 浙江德合光电科技有限公司 | IC chip and lamp-driver integrated LED device and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102660740A (en) * | 2012-05-29 | 2012-09-12 | 东南大学 | Graphene and metal nanoparticle composite film preparation method |
| US20130081678A1 (en) * | 2011-09-30 | 2013-04-04 | Katsuyuki Naito | Conductive material |
| CN104810455A (en) * | 2015-04-30 | 2015-07-29 | 南京大学 | Ultraviolet semiconductor light emitting device and manufacturing method thereof |
| CN106129208A (en) * | 2016-07-07 | 2016-11-16 | 南京大学 | UV LED chips and manufacture method thereof |
-
2017
- 2017-01-13 CN CN201710033552.6A patent/CN106876532B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130081678A1 (en) * | 2011-09-30 | 2013-04-04 | Katsuyuki Naito | Conductive material |
| CN102660740A (en) * | 2012-05-29 | 2012-09-12 | 东南大学 | Graphene and metal nanoparticle composite film preparation method |
| CN104810455A (en) * | 2015-04-30 | 2015-07-29 | 南京大学 | Ultraviolet semiconductor light emitting device and manufacturing method thereof |
| CN106129208A (en) * | 2016-07-07 | 2016-11-16 | 南京大学 | UV LED chips and manufacture method thereof |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107799657A (en) * | 2016-08-31 | 2018-03-13 | 乐金显示有限公司 | Organic illuminating element and display device with light-emitting component with this |
| CN108011002A (en) * | 2017-11-30 | 2018-05-08 | 广东省半导体产业技术研究院 | A kind of UV LED chip production method |
| CN108011002B (en) * | 2017-11-30 | 2019-06-11 | 广东省半导体产业技术研究院 | A kind of UV LED chip production method |
| EP3675156A1 (en) * | 2018-12-28 | 2020-07-01 | Palo Alto Research Center Incorporated | Method and system for mass assembly of 2-d materials |
| US10926521B2 (en) | 2018-12-28 | 2021-02-23 | Palo Alto Research Center Incorporated | Method and system for mass assembly of thin film materials |
| US11648762B2 (en) | 2018-12-28 | 2023-05-16 | Palo Alto Research Center Incorporated | Method and system for mass assembly of thin-film materials |
| US11440307B2 (en) | 2018-12-28 | 2022-09-13 | Palo Alto Research Center Incorporated | Method and system for mass assembly of thin-film materials |
| CN114171652B (en) * | 2020-09-11 | 2024-04-19 | 北京大学 | Structure for improving light extraction efficiency of AlGaN-based DUV-LED and application thereof |
| CN114171652A (en) * | 2020-09-11 | 2022-03-11 | 北京大学 | Structure for improving AlGaN-based DUV-LED light extraction efficiency and application thereof |
| CN112885937B (en) * | 2020-12-30 | 2022-05-17 | 华灿光电（浙江）有限公司 | Preparation method of P electrode of light-emitting diode chip with vertical structure |
| CN112885937A (en) * | 2020-12-30 | 2021-06-01 | 华灿光电（浙江）有限公司 | Preparation method of P electrode of light-emitting diode chip with vertical structure |
| CN113066910A (en) * | 2021-03-22 | 2021-07-02 | 华南师范大学 | Blue light semiconductor device and preparation method thereof |
| CN113745385A (en) * | 2021-07-28 | 2021-12-03 | 厦门士兰明镓化合物半导体有限公司 | LED chip with vertical structure and manufacturing method thereof |
| CN113745385B (en) * | 2021-07-28 | 2023-11-21 | 厦门士兰明镓化合物半导体有限公司 | LED chip with vertical structure and manufacturing method thereof |
| CN115206918A (en) * | 2022-07-20 | 2022-10-18 | 浙江德合光电科技有限公司 | IC chip and lamp-driver integrated LED device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106876532B (en) | 2019-01-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106876532B (en) | The UV LED and its manufacturing method of a kind of high light-emitting rate, high reliability | |
| CN1917246B (en) | Nitride-based white light emitting device and manufacturing method thereof | |
| US8853711B2 (en) | Semiconductor light emitting device and method for manufacturing same | |
| JP5220984B2 (en) | Top-emitting nitride-based light emitting device and method for manufacturing the same | |
| TWI324401B (en) | Fabrication method of high-brightness light emitting diode having reflective layer | |
| CN101310392B (en) | Gallium nitride-based compound semiconductor light-emitting device, lamp, electronic device and machine | |
| CN102097559B (en) | LED and manufacture method thereof | |
| CN103125028B (en) | For the manufacture of the method for group iii nitride semiconductor light-emitting device | |
| CN104810455B (en) | Ultraviolet semiconductor luminescent device and its manufacture method | |
| CN102484185A (en) | Semiconductor light-emitting element and a production method therefor | |
| CN111244244B (en) | High-power LED chip and manufacturing method thereof | |
| JP2008041866A (en) | Nitride semiconductor element | |
| TW201214771A (en) | Light emitting device, light emitting device package, and lighting device | |
| CN105742450B (en) | The preparation method and structure of specific plane geometric figure hot spot LED chip can be irradiated | |
| JP2011513901A (en) | Organic light emitting diode, contact device, and manufacturing method of organic light emitting diode | |
| TW201448284A (en) | Conductive phosphor layer electrode for vertical LED | |
| CN103325912A (en) | Group III nitride semiconductor light-emitting element and method for producing the same | |
| CN106449932A (en) | Vertical-structure light emitting diode and manufacturing method thereof | |
| CN108389945A (en) | Light-emitting component | |
| US20190229233A1 (en) | Light-emitting device and manufacturing method thereof | |
| CN102751415B (en) | There is luminescent device and the manufacture method thereof of vertical stratification | |
| FI122622B (en) | Light-emitting semiconductor device and method of manufacture | |
| KR20090044311A (en) | Light emitting diode and its manufacturing method | |
| CN204857768U (en) | Ultraviolet semiconductor luminescent device | |
| CN106992235B (en) | Light-emitting diode chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |