CN102623589A - Manufacturing method of semiconductor light-emitting device with vertical structure - Google Patents
Manufacturing method of semiconductor light-emitting device with vertical structure Download PDFInfo
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- CN102623589A CN102623589A CN2012100949968A CN201210094996A CN102623589A CN 102623589 A CN102623589 A CN 102623589A CN 2012100949968 A CN2012100949968 A CN 2012100949968A CN 201210094996 A CN201210094996 A CN 201210094996A CN 102623589 A CN102623589 A CN 102623589A
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- 238000005530 etching Methods 0.000 claims abstract description 38
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Abstract
The invention discloses a manufacturing method of a semiconductor light-emitting device with a vertical structure. The manufacturing method comprises the following steps of: (1) providing a light-transmitting substrate with a front surface and a back surface, forming an imaging transition layer and forming an imaging substrate; (2) epitaxially growing a light-emitting epitaxial layer in sequence on the imaging substrate, wherein the light-emitting epitaxial layer at least comprises a buffer layer, an n-type conducting layer, a light-emitting layer and a p-type conducting layer from bottom to top; (3) forming an ohmic contact layer and a bonding layer on the light-emitting epitaxial layer; (4) providing a conducting substrate, and bonding the light-emitting epitaxial layer and the conducting substrate by the bonding layer; (5) thinning the light-transmitting substrate; (6) defining an N-electrode region corresponding to the imaging transition layer on the back surface of the light-transmitting substrate, and etching the light-transmitting substrate of the N-electrode region to a preset depth by adopting laser; (7) etching by adopting a dry process or a wet process, and etching the light-transmitting substrate, the transition layer, the buffer layer remained in the N-electrode region till exposing the n-type conducting layer; and (8) manufacturing an n electrode on the exposed n-type conducting layer.
Description
Technical field
The invention belongs to the manufacturing field of light emitting semiconductor device, specifically relate to a kind of manufacture method of light emitting semiconductor device of vertical stratification.
Background technology
Because two utmost point luminous tubes have produced very big concern in the progress that promotes energy efficiency and life-span each side for replace traditional light emitting source in future.Two utmost point ray structures contain three kinds of main difference functional layers: (1) n type conductive layer; (2) activation luminescent layer; And (3) p type conductive layer.From above-mentioned two utmost point ray structures, after electronics is gone into the activation luminescent layer from n-shape laminar flow, combine to produce electron hole pair and send luminous effect with the hole of going into from p-shape laminar flow.
Lighting two utmost point luminous tubes must be with the interface of electric current through n-layer and p-layer.Usually the n-layer all is to be imbedded under p-layer and the multilayer luminescent layer.Handling on the problem that effectively connects n-layer and p-layer available two kinds of basic device encapsulation structures, (1) vertical device structure: with n-layer and p-layer metal electron contact preparation positive and negative at device; (2) lateral device structure: with n-layer and p-layer metal electron contact preparation on the same surface of device.The vertical stratification electric current is to pass to p from the n vertical direction, helps the injection of charge carrier, the raising combined efficiency.
Summary of the invention
The present invention aims to provide a kind of manufacture method of light emitting semiconductor device of vertical stratification.
A kind of light emitting semiconductor device manufacture method of vertical stratification, it comprises following steps:
1) provides one to have the light-transmissive substrates on positive and negative two surfaces, on its front, form a graphical transition zone, constitute patterned substrate;
2) the luminous epitaxial loayer of epitaxial growth successively on said patterned substrate, it comprises from bottom to top at least: resilient coating, n type conductive layer, luminescent layer, p type conductive layer;
3) on said luminous epitaxial loayer, form ohmic contact layer, bonded layer;
4) electrically-conductive backing plate is provided, said luminous epitaxial loayer and said electrically-conductive backing plate is bondd through said bonded layer;
5) the said light-transmissive substrates of attenuate;
6) definition N electrode zone on the said light-transmissive substrates back side, this N electrode zone is corresponding with said graphical transition zone, and the light-transmissive substrates that adopts the said N electrode zone of laser-induced thermal etching is to predetermined depth;
7) adopt dry method or wet etching, residue light-transmissive substrates, transition zone, the resilient coating of the said N electrode zone of etching successively are until exposing n type conductive layer;
8) manufacturing n electrode on the n type conductive layer that exposes.
In the present invention, in step 1), on the front of said light-transmissive substrates, form a transition zone earlier, form graphical transition zone through photoetching, etching; Substrate is chosen and can be seen through visible light or ultrared material, and its material can be selected from AlN, GaN, GaAs, Si or Sapphire Substrate; The material of said graphical transition zone is an exotic material, and its states of matter transition temperature Tg is greater than 800
oC, its pattern can be figure, square, triangle or hexagon etc.In step 3), can also be included in further and form a metallic mirror on the ohmic contact layer; Said bonded layer is formed on the said metallic mirror, and it is a patterned structures.In step 6), said laser-induced thermal etching is an alignment windows with patterned transition zone, the linear etching of space type for the first time, and cross intersection etching for the second time, the area of said crossover location is no more than the area of graphical transition zone.In step 7), at first adopt the residue light-transmissive substrates of first kind of said N electrode zone of chemical solution selective etch to clean the residuals of laser-induced thermal etching simultaneously; Then adopt second kind of said graphical transition zone of chemical solution selective etch; Adopt the dry ecthing resilient coating at last, until exposing n type conductive layer.
The present invention makes resistant to elevated temperatures graphical transition zone on light-transmissive substrates, as the diaphragm of substrate etch, the luminous epitaxial loayer of growing epitaxial is bonded to epitaxial loayer on the conductive base substrate then, adopts and grinds the micro-control technology with substrate thinning.Utilizing laser earlier is alignment windows with patterned transition zone, the linear etching of space type for the first time, cross intersection etching for the second time; Through speed and the power control etch-rate of regulating laser; Then adopt and do/wet etch process, substrate etch to transition zone, is disposed the residual of laser-induced thermal etching on the substrate simultaneously; Because the transition zone protection is arranged, so can ignore the inhomogeneities of grinding thickness.Remove transition zone then, expose resilient coating, utilize dry etching further to be etched to n type conductive layer, make the N electrode then, at last wafer is dissociated one by one, obtain the light emitting semiconductor device of vertical stratification.
The present invention adopts laser-induced thermal etching and dried/wet etching to combine, and improves etching efficiency in the device fabrication processes; Utilize high temperature resistant transition zone as protective layer, reduce the influence of grinding thickness inhomogeneities to corrosion depth, resilient coating can not be damaged when guaranteeing etch substrate.
Other features and advantages of the present invention will be set forth in specification subsequently, and, partly from specification, become obvious, perhaps understand through embodiment of the present invention.The object of the invention can be realized through the structure that in specification, claims and accompanying drawing, is particularly pointed out and obtained with other advantage.
Though will combine certain exemplary enforcement and method for using to describe the present invention hereinafter, and it will be appreciated by those skilled in the art that and be not intended to the present invention is limited to these embodiment.Otherwise, be intended to cover all substitutes, correction and the equivalent that are included in defined spirit of the present invention of appending claims and the scope.
Description of drawings
Accompanying drawing is used to provide further understanding of the present invention, and constitutes the part of specification, is used to explain the present invention with embodiments of the invention, is not construed as limiting the invention.In addition, the accompanying drawing data are to describe summary, are not to draw in proportion.
The device architecture sketch map of the manufacturing process of the light emitting semiconductor device of a kind of vertical stratification that Fig. 1-11 implements according to the present invention.Wherein:
Fig. 1-2 is for forming the patterned substrate (schematic cross-section of step 1);
Fig. 3 is the pattern sketch map of patterned substrate;
Fig. 4 is the schematic cross-section behind the luminous epitaxial loayer of epitaxial growth (step 2);
Fig. 5 is luminous epitaxial loayer and electrically-conductive backing plate the bonding ((schematic cross-section of step 5) after step 4), the attenuate light-transmissive substrates;
Fig. 6 is the pattern sketch map of bonded layer;
Fig. 7 is a N electrode zone distribution schematic diagram, and it is corresponding with graphical transition zone;
Fig. 8 is for adopting laser-induced thermal etching light-transmissive substrates (schematic cross-section of step 6) to predetermined depth;
Fig. 9 is the sketch map of twice laser-induced thermal etching in the step 6;
Figure 10-11 removes transition zone, the resilient coating (schematic cross-section of step 7) for dried, wet etching;
Figure 12 is the manufacturing n electrode (schematic cross-section after the step 8) on n type conductive layer.
Each label is represented among the figure:
100: patterned substrate; 101: light-transmissive substrates; 102: transition zone; 103: graphical transition figure; 200: luminous epitaxial loayer; 201: resilient coating; 202:n type conductive layer; 203: luminescent layer; 204:p type conductive layer; 301: ohmic contact layer; 302: metallic mirror; 303: bonded layer; 400: electrically-conductive backing plate; The 500:n electrode; The 501:p electrode; The 600:N electrode zone; 601: the district of laser-induced thermal etching for the first time; 602: the district of laser-induced thermal etching for the second time.
Embodiment
Below will combine accompanying drawing and embodiment to specify execution mode of the present invention, how the application technology means solve technical problem to the present invention whereby, and the implementation procedure of reaching technique effect can make much of and implement according to this.Need to prove that only otherwise constitute conflict, each embodiment among the present invention and each characteristic among each embodiment can mutually combine, formed technical scheme is all within protection scope of the present invention.
The present invention is applicable to light emitting semiconductor device manufacturing (like indigo plant, green light LED, ultraviolet LED etc.), and the instance with the ultraviolet light emitting semiconductor device specifies below.
A kind of light emitting semiconductor device manufacture method of vertical stratification is following like step:
At first, as shown in Figure 1, light-transmissive substrates 101 is provided, the resistant to elevated temperatures transition zone 102 of the one deck of growing above that.Light-transmissive substrates can be selected sapphire or AlN for use, and the preferred AlN of present embodiment is as growth substrates.The states of matter transition temperature Tg of transition zone is more preferably greater than 800
oC, its states of matter is temperature-resistant when high temperature epitaxy is grown, and can not influence epitaxial growth parameters, and capable of using doing/wet etching is removed in follow-up technology simultaneously, and the first-selected SiO2 of material, thickness also can be SiN or its combination between 50-500nm.
Next step, as shown in Figure 2, through photoetching, etching, obtain patterned transition zone 103, constitute patterned substrate 100.Figure can be circle, square triangle, hexagon etc., and present embodiment is selected circle for use, and its pattern is as shown in Figure 3.
Next step, as shown in Figure 4, epitaxial growth AlGaN resilient coating 201 successively on patterned substrate 100, n type conductive layer 202, luminescent layer 203, p type conductive layer 204 forms luminous epitaxial loayer 200.
Next step, vapor deposition ohmic contact layer 301, metallic mirror 302, bonded layer 303 successively on p type conductive layer 204.The first-selected Ni/Al/Ti/Au of metallic mirror material, thickness also can be to comprise that a kind of alloy among Al, Ag, Ni, Au, Cu, Pd and the Rh processes between 50-500nm, and through at N
2High annealing reaches ohmic contact characteristic and strengthens it and the adhesive force of P semiconductor layer in the atmosphere.The first-selected Ti/Pt/Au alloy of the material of bonded layer 303, thickness also can be that any alloy that comprises Cr, Ni, Co, Cu, Sn, Au is processed between 0.5 ~ 10um.Bonded layer 303 can be patterned structures (as shown in Figure 6), can further improve the alignment precision of laser-induced thermal etching.
Next step provides an electrically-conductive backing plate 400, and luminous epitaxial loayer 200 is bonded on the electrically-conductive backing plate.Electrically-conductive backing plate 400 can be selected the Si sheet for use.The bonding technology condition: temperature is between 0 ~ 500 ℃, and pressure is between 0 ~ 800 kg, and the time is between 0 ~ 180 minute.Wherein be used for the good bonding face weld layer of silicon chip prepared beforehand of wafer bonding, its material is the Ti/Pt/Au alloy, and thickness also can be that any alloy that comprises Cr, Ni, Co, Cu, Sn, Au is processed between 0.5 ~ 10um.The sectional view of its device is as shown in Figure 5.
Next step adopts and grinds the micro-control technology with light-transmissive substrates 101 attenuates, and its THICKNESS CONTROL is at 4 ~ 50um.Guaranteeing under the injury-free prerequisite of epitaxial loayer that in order to obtain the best light effect of getting, light-transmissive substrates is got over Bao Yuejia.Its minimum thickness of the substrate of different materials is different, is 5.8um like the minimum thickness of AlN, and sapphire minimum thickness is 4.5um, and the minimum thickness of silicon is 9.1um, and the minimum thickness of GaAs is 20.1um.In addition, in order to obtain the preferable light effect that goes out, can select the odd of λ/4 (quarter-wave) for use.
Next step, as shown in Figure 8, according to the figure of transition zone, definition N electrode zone 600 on the said light-transmissive substrates back side, the light-transmissive substrates that adopts the said N electrode zone of laser-induced thermal etching is to predetermined depth.As shown in Figure 7, N electrode zone 600 is corresponding with said graphical transition zone, owing to select the substrate of light transmission for use among the present invention, so can use light to see through figure and then definite N electrode zone 600 of substrate identification transition zone.For different substrates, the light of available different wave band identification transition zone figure, as select for use GaAs or Si sheet be the available infrared ray of substrate to the transition zone Figure recognition, selecting sapphire, AlN, GaN for use is that the visible light of substrate can be discerned the transition zone figure.In a preferred embodiment of the invention, adopt the laser-induced thermal etching of space type line segment.As shown in Figure 9, for the first time control the laser-induced thermal etching starting point with terminal point carries out the lines etching, the second time vertical etching on primary position, the position of intermediate interdigitated is the electrode centre position, the area of intermediate interdigitated position is no more than transition zone unit's area of graph.The laser-induced thermal etching degree of depth is no more than the thickness of substrate, and the etching stop position is the above 1 ~ 3um position of transition zone.In this step, utilize high temperature resistant transition zone as protective layer, reduce of the influence of grinding thickness inhomogeneities to corrosion depth, resilient coating can not be damaged when guaranteeing etch substrate.
Next step utilizes wet etching, and transparent substrates 101 is further etched into transition zone 102, washes the burning trace of laser-induced thermal etching simultaneously, the first-selected KOH of etching solution, and concentration is at 2 ~ 5mol/L.
Next step utilizes wet etching, removes transition zone 102, and its device sectional view is shown in figure 10.Etching solution can be used solution combinations such as HF, NH4F.
Next step utilizes dry etching, at the laser cutting position of intersecting point, and etch buffer layers, until exposing the n semi-conductive layer, its device sectional view is shown in figure 11.
Next step makes N electrode 500 on n type conductive layer, the preferred Ti of electrode material, Al, Au meet metal for three kinds, and also can be Ti, Al, Au, Ag, Rh, Co appoints and a kind of alloy is processed interior.
Next step forms p electrode 501 at the back side of electrically-conductive backing plate 400.According to the size of device cell, dissociate one by one, obtain the device of vertical stratification.Shown in figure 12, formation has the luminescent device of the vertical stratification of substrate according to the method described above.Substrate can bear the stress of extension, prevents that epitaxial loayer from breaking in follow-up routing processing procedure.In order to improve the light effect of extracting further, also can do roughening treatment on the surface of substrate.
Claims (10)
1. the light emitting semiconductor device manufacture method of a vertical stratification, it comprises following steps:
1) provides one to have the light-transmissive substrates on positive and negative two surfaces, on its front, form a graphical transition zone, constitute patterned substrate;
2) the luminous epitaxial loayer of epitaxial growth successively on said patterned substrate, it comprises from bottom to top at least: resilient coating, n type conductive layer, luminescent layer, p type conductive layer;
3) on said luminous epitaxial loayer, form ohmic contact layer, bonded layer;
4) electrically-conductive backing plate is provided, said luminous epitaxial loayer and said electrically-conductive backing plate is bondd through said bonded layer;
5) the said light-transmissive substrates of attenuate;
6) definition N electrode zone on the said light-transmissive substrates back side, this N electrode zone is corresponding with said graphical transition zone, and the light-transmissive substrates that adopts the said N electrode zone of laser-induced thermal etching is to predetermined depth;
7) adopt dry method or wet etching, residue light-transmissive substrates, transition zone, the resilient coating of the said N electrode zone of etching successively are until exposing n type conductive layer;
8) manufacturing n electrode on the n type conductive layer that exposes.
2. the light emitting semiconductor device manufacture method of vertical stratification according to claim 1, it is characterized in that: the material of said light-transmissive substrates is selected from AlN, GaN, GaAs, Si or Sapphire Substrate.
3. the light emitting semiconductor device manufacture method of vertical stratification according to claim 1, it is characterized in that: the material of said graphical transition zone is an exotic material, its states of matter transition temperature Tg is greater than 800
oC.
4. the light emitting semiconductor device manufacture method of vertical stratification according to claim 1 is characterized in that: in step 1), on the front of said light-transmissive substrates, form a transition zone earlier, form graphical transition zone through photoetching, etching.
5. the light emitting semiconductor device manufacture method of vertical stratification according to claim 1 is characterized in that: the pattern of said graphical transition zone is figure, square, triangle or hexagon.
6. the light emitting semiconductor device manufacture method of vertical stratification according to claim 1 is characterized in that: in step 3), also comprise: on ohmic contact layer, form a metallic mirror.
7. the light emitting semiconductor device manufacture method of vertical stratification according to claim 1, it is characterized in that: said bonded layer is a patterned structures.
8. the light emitting semiconductor device manufacture method of vertical stratification according to claim 1; It is characterized in that: in step 6); Said laser-induced thermal etching is an alignment windows with patterned transition zone, the linear etching of space type for the first time, cross intersection etching for the second time.
9. the light emitting semiconductor device manufacture method of vertical stratification according to claim 8, it is characterized in that: the area of said crossover location is no more than the area of graphical transition zone.
10. the light emitting semiconductor device manufacture method of vertical stratification according to claim 1; It is characterized in that: in step 7), at first adopt the residue light-transmissive substrates of first kind of said N electrode zone of chemical solution selective etch to clean the residuals of laser-induced thermal etching simultaneously; Then adopt second kind of said graphical transition zone of chemical solution selective etch; Adopt the dry ecthing resilient coating at last, until exposing n type conductive layer.
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| CN104218137A (en) * | 2013-06-05 | 2014-12-17 | 江苏豪迈照明科技有限公司 | LED light-emitting substrate, LED chip COB (chip on board) package structure and LED lamp with LED chip COB package structure |
| CN105914275A (en) * | 2016-06-22 | 2016-08-31 | 天津三安光电有限公司 | Upside-down mounted light emitting diode and manufacturing method therefor |
| CN112885718A (en) * | 2021-01-20 | 2021-06-01 | 厦门乾照光电股份有限公司 | Preparation method of composite conductive film |
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