CN102623589B - Manufacturing method of semiconductor light-emitting device with vertical structure - Google Patents
Manufacturing method of semiconductor light-emitting device with vertical structure Download PDFInfo
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- CN102623589B CN102623589B CN201210094996.8A CN201210094996A CN102623589B CN 102623589 B CN102623589 B CN 102623589B CN 201210094996 A CN201210094996 A CN 201210094996A CN 102623589 B CN102623589 B CN 102623589B
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Abstract
The invention discloses a manufacturing method of a semiconductor light-emitting device with a vertical structure. The manufacturing method comprises the following steps of: (1) providing a light-transmitting substrate, manufacturing an imaging transition layer and forming an imaging substrate; (2) epitaxially growing a light-emitting epitaxial layer in sequence on the imaging substrate, wherein the light-emitting epitaxial layer at least comprises a buffer layer, an n-type conducting layer, a light-emitting layer and a p-type conducting layer from bottom to top; (3) manufacturing an ohmic contact layer and a bonding layer on the light-emitting epitaxial layer; (4) providing a conducting substrate, and bonding the light-emitting epitaxial layer and the conducting substrate by the bonding layer; (5) thinning the light-transmitting substrate; (6) defining an N-electrode region corresponding to the imaging transition layer on the back surface of the light-transmitting substrate, and etching the light-transmitting substrate of the N-electrode region to a preset depth by adopting laser; (7) etching by adopting a dry process or a wet process, and etching the N-electrode region till exposing the n-type conducting layer; and (8) manufacturing an n electrode on the exposed n-type conducting layer.
Description
Technical field
The invention belongs to the manufacture field of light emitting semiconductor device, specifically relate to a kind of manufacture method of light emitting semiconductor device of vertical stratification.
Background technology
Because two utmost point luminous tubes are in the progress that promotes energy efficiency and life-span each side, for replace traditional light emitting source in future, produced very large concern.Two utmost point ray structures contain three kinds of main difference functional layers: (1) N-shaped conductive layer; (2) activation luminescent layer; And (3) p-type electric-conducting layer.From above-mentioned two utmost point ray structures, when electronics is combined generation electron hole pair and is sent luminous effect from n-shape laminar flow enters to activate luminescent layer with the hole entering from p-shape laminar flow.
Lighting two utmost point luminous tubes must be by electric current by the interface of n-layer and p-layer.Conventionally n-layer is to be all imbedded under p-layer and multilayer luminescent layer.Processing in the problem that effectively connects n-layer and p-layer available two kinds of basic device encapsulation structures, (1) vertical device structure: the positive and negative by n-layer and p-layer metal electron contact preparation at device; (2) lateral device structure: by n-layer and p-layer metal electron contact preparation on the same surface of device.Vertical stratification electric current is to be transmitted to p from n vertical direction, is conducive to the injection of charge carrier, raising combined efficiency.
Summary of the invention
The present invention aims to provide a kind of manufacture method of light emitting semiconductor device of vertical stratification.
A light emitting semiconductor device manufacture method for vertical stratification, it comprises following steps:
1) provide one to there are positive and negative two surperficial light-transmissive substrates, on its front, form a graphical transition zone, form patterned substrate;
2) epitaxial growth epitaxial loayer successively in described patterned substrate, it at least comprises from bottom to top: resilient coating, N-shaped conductive layer, luminescent layer, p-type electric-conducting layer;
3) on described epitaxial loayer, form ohmic contact layer, bonded layer;
4) provide an electrically-conductive backing plate, by described bonded layer, described epitaxial loayer and described electrically-conductive backing plate are bondd;
5) light-transmissive substrates described in attenuate;
6) on the described light-transmissive substrates back side, define N electrode zone, this N electrode zone is corresponding with described graphical transition zone, adopts the light-transmissive substrates of N electrode zone described in laser-induced thermal etching to predetermined depth;
7) adopt dry method or wet etching, residue light-transmissive substrates, transition zone, the resilient coating of N electrode zone described in etching successively, until expose N-shaped conductive layer;
8) on the N-shaped conductive layer exposing, make n electrode.
In the present invention, in step 1), first on the front of described light-transmissive substrates, form a transition zone, by photoetching, etching, form graphical transition zone; Substrate is chosen and can be seen through visible ray or ultrared material, and its material can be selected from AlN, GaN, GaAs, Si or Sapphire Substrate; The material of described graphical transition zone is exotic material, and its transformation temperature T g is greater than 800
oc, its pattern can be circle, square, triangle or hexagon etc.In step 3), can also be included in further and on ohmic contact layer, form a metallic mirror; Described bonded layer is formed on described metallic mirror, and it is patterned structures.In step 6), described laser-induced thermal etching be take patterned transition zone as alignment windows, the linear etching of space type for the first time, and cross intersection etching for the second time, the area of described crossover location is no more than the area of graphical transition zone.In step 7), first adopt the residue light-transmissive substrates of N electrode zone described in the first chemical solution selective etch to clean the residuals of laser-induced thermal etching simultaneously; Then adopt graphical transition zone described in the second chemical solution selective etch; Finally adopt dry ecthing resilient coating, until expose N-shaped conductive layer.
The present invention makes resistant to elevated temperatures graphical transition zone in light-transmissive substrates, and as the diaphragm of substrate etch, then growing epitaxial epitaxial loayer, is bonded to epitaxial loayer on conductive base substrate, adopts and grinds micro-control technology by substrate thinning.First utilize laser to take patterned transition zone as alignment windows; the linear etching of space type for the first time; cross intersection etching for the second time; by regulating speed and the power of laser, control etch-rate; then adopt dry/wet etch process, substrate etch, to transition zone, is disposed to the residual of laser-induced thermal etching on substrate simultaneously; because have transition zone protection, so can ignore the inhomogeneities of grinding thickness.Then remove transition zone, expose resilient coating, utilize dry etching to be further etched to N-shaped conductive layer, then make N electrode, finally wafer is dissociated one by one, obtain the light emitting semiconductor device of vertical stratification.
The present invention adopts laser-induced thermal etching to combine with dry/wet etching, improves etching efficiency in device fabrication processes; Utilize high temperature resistant transition zone as protective layer, reduce the impact of grinding thickness inhomogeneities on corrosion depth, while guaranteeing etch substrate, resilient coating can not be damaged.
Other features and advantages of the present invention will be set forth in the following description, and, partly from specification, become apparent, or understand by implementing the present invention.Object of the present invention and other advantage can be realized and be obtained by specifically noted structure in specification, claims and accompanying drawing.
Although describe the present invention in connection with some exemplary enforcements and using method hereinafter, it will be appreciated by those skilled in the art that and be not intended to the present invention to be limited to these embodiment.Otherwise, be intended to covering and be included in all substitutes, correction and the equivalent in the defined spirit of the present invention of appending claims and scope.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, for explaining the present invention, is not construed as limiting the invention together with embodiments of the present invention.In addition, accompanying drawing data are to describe summary, are not to draw in proportion.
Fig. 1-11 are according to the device architecture schematic diagram of the manufacturing process of the light emitting semiconductor device of a kind of vertical stratification of the invention process.Wherein:
Fig. 1-2 is for forming the patterned substrate (schematic cross-section of step 1);
Fig. 3 is the pattern schematic diagram of patterned substrate;
Fig. 4 is the schematic cross-section after epitaxial growth epitaxial loayer (step 2);
Fig. 5 is epitaxial loayer and electrically-conductive backing plate the bonding ((schematic cross-section of step 5) after step 4), attenuate light-transmissive substrates;
Fig. 6 is the pattern schematic diagram of bonded layer;
Fig. 7 is N electrode zone distribution schematic diagram, and it is corresponding with graphical transition zone;
Fig. 8 is for adopting laser-induced thermal etching light-transmissive substrates (schematic cross-section of step 6) to predetermined depth;
Fig. 9 is the schematic diagram of twice laser-induced thermal etching in step 6;
Figure 10-11 are dry, wet etching removal transition zone, the resilient coating (schematic cross-section of step 7);
Figure 12 for making the n electrode (schematic cross-section after step 8) on N-shaped conductive layer.
In figure, each label represents:
100: patterned substrate; 101: light-transmissive substrates; 102: transition zone; 103: graphical transition zone; 200: epitaxial loayer; 201: resilient coating; 202:n type conductive layer; 203: luminescent layer; 204:p type conductive layer; 301: ohmic contact layer; 302: metallic mirror; 303: bonded layer; 400: electrically-conductive backing plate; 501:p electrode; 502:n electrode; 600:N electrode zone; 601: the district of laser-induced thermal etching for the first time; 602: the district of laser-induced thermal etching for the second time.
Embodiment
Below with reference to drawings and Examples, describe embodiments of the present invention in detail, to the present invention, how application technology means solve technical problem whereby, and the implementation procedure of reaching technique effect can fully understand and implement according to this.It should be noted that, only otherwise form conflict, each embodiment in the present invention and each feature in each embodiment can mutually combine, and formed technical scheme is all within protection scope of the present invention.
The present invention is applicable to light emitting semiconductor device manufacture (as indigo plant, green light LED, ultraviolet LED etc.), and the example with ultraviolet light emitting semiconductor device is specifically described below.
A light emitting semiconductor device manufacture method for vertical stratification is as follows in step:
First, as shown in Figure 1, provide light-transmissive substrates 101, the resistant to elevated temperatures transition zone 102 of the one deck of growing thereon.Light-transmissive substrates can be selected sapphire or AlN, and the preferred AlN of the present embodiment is as growth substrates.The transformation temperature T g of transition zone is more preferably greater than 800
oc, when high temperature epitaxy is grown, its states of matter is temperature-resistant, can not affect epitaxial growth parameters, can utilize dry/wet etching to remove simultaneously in follow-up technique, the first-selected SiO2 of material, thickness, between 50-500nm, can be also SiN or its combination.
Next step, as shown in Figure 2, by photoetching, etching, obtain patterned transition zone 103, forms patterned substrate 100.Figure can be circle, square triangle, hexagon etc., and the present embodiment is selected circle, and its pattern is as shown in Figure 3.
Next step, as shown in Figure 4, epitaxial growth AlGaN resilient coating 201 successively on patterned substrate 100, N-shaped conductive layer 202, luminescent layer 203, p-type electric-conducting layer 204, forms epitaxial loayer 200.
Next step, evaporation ohmic contact layer 301, metallic mirror 302, bonded layer 303 successively on p-type electric-conducting layer 204.The first-selected Ni/Al/Ti/Au of metallic mirror material, thickness, between 50-500nm, can be also to comprise that a kind of alloy in Al, Ag, Ni, Au, Cu, Pd and Rh makes, and by N
2in atmosphere, high annealing reaches ohmic contact characteristic and strengthens it and the adhesive force of P semiconductor layer.The first-selected Ti/Pt/Au alloy of material of bonded layer 303, thickness, between 0.5 ~ 10um, can be also that any alloy that comprises Cr, Ni, Co, Cu, Sn, Au is made.Bonded layer 303 can be patterned structures (as shown in Figure 6), can further improve the alignment precision of laser-induced thermal etching.
Next step, provide an electrically-conductive backing plate 400, and epitaxial loayer 200 is bonded on electrically-conductive backing plate.Electrically-conductive backing plate 400 can be selected Si sheet.Bonding technology condition: temperature is between 0 ~ 500 ℃, and pressure is between 0 ~ 800 kg, and the time is between 0 ~ 180 minute.Wherein the silicon chip for bonding chip prepares bonding face weld layer in advance, and its material is Ti/Pt/Au alloy, and thickness, between 0.5 ~ 10um, can be also that any alloy that comprises Cr, Ni, Co, Cu, Sn, Au is made.The sectional view of its device as shown in Figure 5.
Next step, adopt and grind micro-control technology by light-transmissive substrates 101 attenuates, and its THICKNESS CONTROL is at 4 ~ 50um.Guaranteeing under the injury-free prerequisite of epitaxial loayer, in order to obtain the best light effect of getting, light-transmissive substrates is got over Bao Yuejia.Its minimum thickness of the substrate of different materials is different, and if the minimum thickness of AlN is 5.8um, sapphire minimum thickness is 4.5um, and the minimum thickness of silicon is 9.1um, and the minimum thickness of GaAs is 20.1um.In addition, in order obtaining, preferably to go out light effect, can to select λ/4(quarter-wave) odd-multiple.
Next step as shown in Figure 8, according to the figure of transition zone, defines N electrode zone 600 on the described light-transmissive substrates back side, adopts the light-transmissive substrates of N electrode zone described in laser-induced thermal etching to predetermined depth.As shown in Figure 7, N electrode zone 600 is corresponding with described graphical transition zone, owing to selecting the substrate of light transmission in the present invention, so can use light to see through figure and then definite N electrode zone 600 of substrate identification transition zone.For different substrates, the light of available different wave band identification transition zone figure, the available infrared ray that GaAs or Si sheet are substrate as selected, to the identification of transition zone figure, selects the visible ray that sapphire, AlN, GaN are substrate can identify transition zone figure.In a preferred embodiment of the invention, adopt the laser-induced thermal etching of space type line segment.As shown in Figure 9, control for the first time laser-induced thermal etching starting point and terminal and carry out lines etching, vertical etching on primary position for the second time, the position of intermediate interdigitated is electrode centre position, the area of intermediate interdigitated position is no more than the area of transition zone unit's figure.The laser-induced thermal etching degree of depth is no more than the thickness of substrate, and etch stop position is the above 1 ~ 3um of transition zone position.In this step, utilize high temperature resistant transition zone as protective layer, reduce the impact of grinding thickness inhomogeneities on corrosion depth, while guaranteeing etch substrate, resilient coating can not be damaged.
Next step, utilize wet etching, and transparent substrates 101 is further etched into transition zone 102, washes the burning trace of laser-induced thermal etching simultaneously, the first-selected KOH of etching solution, and concentration is at 2 ~ 5mol/L.
Next step, utilize wet etching, removes transition zone 102, and its device sectional view as shown in figure 10.Etching solution can be used the solution combinations such as HF, NH4F.
Next step, utilize dry etching, at laser cutting position of intersecting point, and etch buffer layers, until expose N-shaped conductive layer, its device sectional view is as shown in figure 11.
Next step makes n electrode 502 on N-shaped conductive layer, and the preferred Ti of electrode material, Al, tri-kinds of composition metals of Au can be also that Ti, Al, Au, Ag, Rh, Co make at interior any alloy.
Next step, form p electrode 501 at the back side of electrically-conductive backing plate 400.According to the size of device cell, dissociate one by one, obtain the device of vertical stratification.As shown in figure 12, form according to the method described above the luminescent device with the vertical stratification of substrate.Substrate can bear the stress of extension, prevents that epitaxial loayer from breaking in follow-up routing processing procedure.In order to improve further light effect of extracting, also can do roughening treatment on the surface of substrate.
Claims (9)
1. a light emitting semiconductor device manufacture method for vertical stratification, it comprises following steps:
1) provide one to there are positive and negative two surperficial light-transmissive substrates, on its front, form a graphical transition zone, form patterned substrate;
2) epitaxial growth epitaxial loayer successively in described patterned substrate, it at least comprises from bottom to top: resilient coating, N-shaped conductive layer, luminescent layer, p-type electric-conducting layer;
3) on described epitaxial loayer, form ohmic contact layer, bonded layer;
4) provide an electrically-conductive backing plate, by described bonded layer, described luminous epitaxial loayer and described electrically-conductive backing plate are bondd;
5) light-transmissive substrates described in attenuate;
6) on the described light-transmissive substrates back side, define N electrode zone, this N electrode zone is corresponding with described graphical transition zone, adopts the light-transmissive substrates of N electrode zone described in laser-induced thermal etching to predetermined depth;
7) first adopt the residue light-transmissive substrates of N electrode zone described in the first chemical solution selective etch to clean the residuals of laser-induced thermal etching simultaneously; Then adopt graphical transition zone described in the second chemical solution selective etch; Finally adopt dry ecthing resilient coating, until expose N-shaped conductive layer;
8) on the N-shaped conductive layer exposing, make n electrode.
2. the light emitting semiconductor device manufacture method of vertical stratification according to claim 1, is characterized in that: the material of described light-transmissive substrates is selected from AlN, GaN, GaAs, Si or Sapphire Substrate.
3. the light emitting semiconductor device manufacture method of vertical stratification according to claim 1, is characterized in that: the material of described graphical transition zone is exotic material, and its transformation temperature T g is greater than 800
oc.
4. the light emitting semiconductor device manufacture method of vertical stratification according to claim 1, is characterized in that: in step 1), first on the front of described light-transmissive substrates, form a transition zone, by photoetching, etching, form graphical transition zone.
5. the light emitting semiconductor device manufacture method of vertical stratification according to claim 1, is characterized in that: the pattern of described graphical transition zone is circular, square, triangle or hexagon.
6. the light emitting semiconductor device manufacture method of vertical stratification according to claim 1, is characterized in that: in step 3), also comprise: on ohmic contact layer, form a metallic mirror.
7. the light emitting semiconductor device manufacture method of vertical stratification according to claim 1, is characterized in that: described bonded layer is patterned structures.
8. the light emitting semiconductor device manufacture method of vertical stratification according to claim 1, it is characterized in that: in step 6), described laser-induced thermal etching be take patterned transition zone as alignment windows, linear etching, for the second time cross intersection etching of space type for the first time.
9. the light emitting semiconductor device manufacture method of vertical stratification according to claim 8, is characterized in that: the area of described crossover location is no more than the area of graphical transition zone.
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| CN105914275B (en) * | 2016-06-22 | 2018-04-27 | 天津三安光电有限公司 | Inverted light-emitting diode (LED) and preparation method thereof |
| CN112885718B (en) * | 2021-01-20 | 2022-07-05 | 厦门乾照光电股份有限公司 | Preparation method of composite conductive film |
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| CN101604717A (en) * | 2009-07-15 | 2009-12-16 | 山东华光光电子有限公司 | A kind of vertical GaN-based LED chip and preparation method thereof |
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| CN102099934A (en) * | 2008-07-15 | 2011-06-15 | 高丽大学校 | Supporting substrate for producing a vertically structured semiconductor light-emitting element, and a vertically structured semiconductor light-emitting element employing the same |
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| US20080042149A1 (en) * | 2006-08-21 | 2008-02-21 | Samsung Electro-Mechanics Co., Ltd. | Vertical nitride semiconductor light emitting diode and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100350642C (en) * | 2004-03-26 | 2007-11-21 | 晶元光电股份有限公司 | Organic bonding luminous assembly with verticals tructure |
| CN102099934A (en) * | 2008-07-15 | 2011-06-15 | 高丽大学校 | Supporting substrate for producing a vertically structured semiconductor light-emitting element, and a vertically structured semiconductor light-emitting element employing the same |
| CN101604717A (en) * | 2009-07-15 | 2009-12-16 | 山东华光光电子有限公司 | A kind of vertical GaN-based LED chip and preparation method thereof |
| CN101937960A (en) * | 2010-08-20 | 2011-01-05 | 厦门市三安光电科技有限公司 | AlGaInP light-emitting diode in vertical structure and manufacturing method thereof |
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Effective date of registration: 20231029 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |
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