CN103066179A - Epitaxial structure and method for preparation of self-peeling gallium nitride thin film of sapphire substrate - Google Patents
Epitaxial structure and method for preparation of self-peeling gallium nitride thin film of sapphire substrate Download PDFInfo
- Publication number
- CN103066179A CN103066179A CN2013100137033A CN201310013703A CN103066179A CN 103066179 A CN103066179 A CN 103066179A CN 2013100137033 A CN2013100137033 A CN 2013100137033A CN 201310013703 A CN201310013703 A CN 201310013703A CN 103066179 A CN103066179 A CN 103066179A
- Authority
- CN
- China
- Prior art keywords
- sapphire substrate
- epitaxial
- layer
- gallium nitride
- mechanical strength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention relates to an epitaxial structure for preparation of a self-peeling gallium nitride thin film of a sapphire substrate and a method for the preparation of the self-peeling gallium nitride thin film of the sapphire substrate, wherein the epitaxial structure for the preparation of the self-peeling gallium nitride thin film of the sapphire substrate and the method for the preparation of the self-peeling gallium nitride thin film of the sapphire substrate have a low dislocation rate, a large area and a high yield, and can realize manufacturing of light-emitting diodes (LEDs) which are low in cost and high in luminous efficacy and are in perpendicular structures. The epitaxial structure for the preparation of the self-peeling gallium nitride thin film of the sapphire substrate comprises an epitaxial layer on the top and the sapphire substrate at the bottom, wherein a low mechanical strength layer is arranged between the epitaxial layer and the sapphire substrate and comprises a plurality of dot-shaped structures which are arranged in the shape of a matrix, one portion of each dot-shaped structure protrudes out of the surface of the sapphire substrate, the other portion of each dot-shaped structure extends into the sapphire substrate, and the contact area between the epitaxial layer and the surface of the sapphire substrate is as small as possible.
Description
Technical field
The present invention relates to a kind of preparation method of gallium nitride film, relate in particular to gallium nitride film preparation that a kind of Sapphire Substrate can peel off certainly with epitaxial structure and method.
Background technology
LED as a kind of solid state light emitter have that volume is little, the life-span is long, brightness is high, energy consumption is low, do not produce secondary pollution, the many merits such as easy of integration, as a kind of green illumination light source, it progresses into general illumination from high-end lighting field.The white light LEDs preparation method of existing market mainly makes the epitaxial wafer with gallium nitride base light emitting structure by the organic metal vapour deposition process at Sapphire Substrate, silicon carbide substrates or silicon substrate, then epitaxial wafer is further made the LED of transversary or vertical stratification by techniques such as photoetching, electrode evaporations.The LED of so-called transversary, its positive and negative metal electrode all is in the same side of led chip.The LED of so-called vertical stratification, upside and the downside of its positive and negative metal electrode office chip.The LED of vertical stratification is more even because of electric current distribution, is easier to derive give birth to heat in the luminescent layer, reduces junction temperature, therefore the LED of vertical stratification has higher light efficiency.
Silicon carbide substrates and silicon substrate can be made into the higher vertical structure LED of light efficiency because its heat-conductivity conducting is good, corrodible.But this two kinds of substrates or because of with high costs, or can't promote greatly because of technical difficulty.
The growth technology of Sapphire Substrate is the most ripe in three kinds of substrates, with low cost, but Sapphire Substrate is corrosion-resistant because of it, hardness is high, the characteristic of printing opacity, thermal insulation, electric insulation, the main transversary of using manufactures and designs undersized LED on the market, and Sapphire Substrate ground attenuate, improve light efficiency.But large scale, high-power LED because of the inevitable current spread problem of transversary self and Sapphire Substrate heat dissipation problem, have restricted the further lifting of light efficiency and brightness.
In order further to improve light efficiency and the brightness of LED, must peel off Sapphire Substrate, realize the LED of vertical stratification.
The method of peeling off at present Sapphire Substrate mainly contains three kinds: the corrosion of laser lift-off, selective chemical is peeled off and is had certainly peeling off of weak mechanical strength layer.The laser lift-off technique peeling rate is fast, but equipment cost is high, to peel off yield low, only has the large-scale producer of minority to use.The selective chemical corrosion utilizes the different or different GaN of the energy gap of InGaN and GaN to mix, and selects by lighting activation or electric current, InGaN and the heavily doped GaN selective chemical of N-shaped are corroded (
(1)A.R.Stonas, T.Margalith, S.P.DenBaars, L.A.Coldren, E.L.Hu, Development of selective lateral photoelectrochemical etching of InGaN/GaN for lift-off applications, Appl.Phys.Lett.78,1945 (2001).(corrosion of selective light electrochemistry side)) (
(2)J.Park, K.M.Song, S.R.Jeon, J.H.Baek, and S.W.Ryu, Doping selective lateral electrochemical etching of GaN for chemical lift-off, Appl.Phys.Lett.94,221907 (2009).(corrosion of selective electrochemical side)).Selective chemical corrosion corrosion has advantages of the not damaged luminescent layer, but because of the restriction of corrosion rate, general chip size is no more than 1mm.Require at the bottom of peeling liner Sapphire Substrate and gallium nitride contact-making surface with weak mechanical strength layer have lower mechanical strength, to realize separating of epitaxial loayer and substrate.The making of weak mechanical strength layer mainly realizes by two kinds of methods: extension self-generating and selective chemical corrosion.Extension self-generating method is by depositing first one deck gallium nitride film on substrate, again by PhotoelectrochemicalMethod Method to thin film corrosive, form and have many mushy weak mechanical strength layers, then continue GaN epitaxial growth (
(3)Y.Zhang, B.Leung, J.Han, A liftoff process of GaN layers and devices through nanoporous transformation, Appl.Phys.Lett.100,181908 (2012).(nanoaperture mechanical stripping)).This kind method is large because of pore-size control difficulty, and gallium nitride dislocation rate is high, therefore affect the LED light efficiency, causes cost to rise, and overall yield descends.The method of selective chemical corrosion deposits first one deck and has strip or cancellated corrodible sacrifice layer before epitaxial growth, after finishing epitaxial growth, epitaxial loayer is cut apart corrosion, and then carry out mechanical stripping (
(4)M.S.Lin, C.F.Lin, W.C.Huang, G.M.Wang, B.C.Shieh, J.J.Dai, S.Y.Chang, D.S.Wuu, P.L.Liu, R.H.Horng, Chemical – Mechanical Lift-Off Process for InGaN Epitaxial Layers, Appl.Phys.Express4,062101 (2011).(generating again mechanical stripping of nano-pillar after the corrosion of selective chemical side), R.H.Horng, C.T.Pan, T.Y.Tsai, D.S.Wuu, Transferring Thin Film GaN LED Epi-Structure to the Cu Substrate by Chemical Lift-Off Technology, Electrochem.Solid-State Lett.14 (7) H281-H284 (2011).)。This method has continued the shortcoming of side direction chemical corrosion, and production efficiency is low, and the LED size is little, can't carry out large-scale application.
Summary of the invention
Purpose of the present invention is exactly for addressing the above problem, and provides gallium nitride film preparation that the Sapphire Substrate of a kind of infraversion malposition rate, large tracts of land, high yield can peel off certainly with epitaxial structure and method, realizes that the LED of the vertical stratification of low-cost, high light efficiency makes.
For achieving the above object, the present invention adopts following technical scheme:
The gallium nitride film preparation epitaxial structure that a kind of Sapphire Substrate can be peeled off certainly, it comprises the epitaxial loayer on top and the Sapphire Substrate of bottom, between epitaxial loayer and Sapphire Substrate, be provided with weak mechanical strength layer, weak mechanical strength layer comprises some dots structures of rectangular arrangement, dots structure partly protrudes from the Sapphire Substrate surface, and remainder gos deep into Sapphire Substrate; Epitaxial loayer and Sapphire Substrate Surface Contact are the least possible.
Described dots structure is six terrace with edges, round platform or hemispherical, and the bottom of each dots structure is embedded in the Sapphire Substrate, and the interval exposes the surface of Sapphire Substrate in the dot matrix; Each dots structure comprises a metal level, and metal level three faces are wrapped in the passivation layer, and the metal level bottom surface contacts with Sapphire Substrate, as Sapphire Substrate surface graphics mask.
Described six terrace with edge shapes, round platform or hemispherical height are not more than 3um, and the length of side or straight fineness ratio are greater than 4um, and minimum spacing is not more than 2um.
Described epitaxial loayer comprises from top to bottom at least: p-type GaN, multiple InGaN/GaN quantum well, N-shaped GaN and resilient coating.
Described epitaxy layer thickness is not less than 6um, and resilient coating must be enough to cover weak mechanical strength layer.
Be provided with one deck N-shaped AlGaN between described N-shaped GaN and resilient coating.
Described passivation material is SiO2 or SiN.
A kind of Sapphire Substrate stripping means of epitaxial structure, detailed process is:
Step 1 is at the weak mechanical strength layer of Sapphire Substrate preparation;
Step 2 is carried out the outer layer growth of gallium nitride, weak mechanical strength layer is covered fully, until p-type GaN finishes growth;
Step 3, after finishing whole epitaxial growth, plating p-type electrode on the p-type GaN of epitaxial wafer top, the p-type electrode can be the combination electrode of metal electrode or ITO and metal electrode combination, supporting substrate at p-type electrode welding heat-conductivity conducting, adopt the mechanical assistance mode to peel off Sapphire Substrate, stay remaining epitaxial loayer by base plate supports;
Step 4 after etch buffer layer removed, is carried out chip manufacture, and GaN plates metal electrode at N-shaped, and the chip that completes has from top to bottom: the metal electrode on the N-shaped GaN, luminous epitaxial loayer, as the heat-conductivity conducting substrate of p-type electrode.
The detailed process of described step 1 is:
Step 1-1, Sapphire Substrate is carried out pattern mask and is made:
At Sapphire Substrate deposition one deck mask, and graphical, form rectangular hole of arranging;
Step 1-2: Sapphire Substrate is graphical
Further adopt dry etching or wet etching that Sapphire Substrate is carried out etching, form the hole corresponding with the hole of mask;
Step 1-3: metal cladding
Plate the metal level that a layer thickness is not less than the hole degree of depth in patterned Sapphire Substrate;
Step 1-4: graphical metal level
Etching metal layer unnecessary between each hole is removed, exposed corresponding Sapphire Substrate surface;
Step 1-5: plating passivation layer
On graphical metal level, deposit again the thick SiO2 passivation layer of one deck 0.5-1um first, again SiO2 passivation layer etching unnecessary between hole is removed, expose corresponding Sapphire Substrate surface, finish the preparation of weak mechanical strength layer.
The detailed process of described step 3 is:
Step 3-1, plating p-type electrode
At first at the transparency conducting layer ITO of p-type GaN layer deposition thick layer 200-250nm, on ITO, deposit again the thick gold electrode of one deck 1um;
Step 3-2, the welding supporting substrate
The heat-conductivity conducting substrate that scribbles golden tin solder is close to the epitaxial wafer that is coated with the p-type electrode, and is carried out 10-20min280-300 ℃ of annealing, make the weldering of substrate and epitaxial wafer tight;
Step 3-3, mechanical assistance is peeled off Sapphire Substrate
The rapid temperature rise and drop that epitaxial wafer is carried out more than 50 times-30 ℃ to 120 ℃ is processed, and alternating temperature speed is not to damage epitaxial loayer for easy; The intrinsic thermal deformation of the rapid thermal strain of metal level and gallium nitride and sapphire itself is poor, weak mechanical strength layer and epitaxial loayer is broken away from fully, and then Sapphire Substrate is stripped from.
The invention has the beneficial effects as follows: utilize not infiltrating of metal level thermal denaturation, passivation layer and epitaxial loayer, and utilize the mask transverse epitaxial growth technology, when improving the outer layer growth quality, realize the possibility that epitaxial loayer and Sapphire Substrate are peeled off, and by the heating and cooling processing repeated multiple times to epitaxial wafer, further reduce weak mechanical strength layer to the adhesion of epitaxial loayer, realized that the integral body of the batch of epitaxial loayer is peeled off, greatly improved production efficiency.
Description of drawings
Fig. 1 is the structural representation of the epitaxial wafer that contains weak mechanical strength layer of the embodiment of the invention.
Fig. 2 is weak mechanical strength layer operation principle schematic diagram of the present invention.
Fig. 2 a forms the hole schematic diagram after passivation layer and epitaxial loayer break away from.
Fig. 3 is the structure schematic diagram of fabrication technology of the weak mechanical strength layer of the embodiment of the invention.
Fig. 4 is the structure schematic diagram of fabrication technology that the Sapphire Substrate of the embodiment of the invention shifts
Fig. 5 is the structural representation of the vertical structure LED of the embodiment of the invention.
Embodiment
The present invention is described in further detail below in conjunction with drawings and Examples.
The present embodiment adopts the general epitaxial structure (Fig. 1) of gallium nitride based LED, and it comprises from top to bottom:
(1) epitaxial loayer 130
The growth of epitaxial layer of gallium nitride can be adopted general two-step growth method, forms GaN nuclear on Sapphire Substrate 110 surfaces, and by the high annealing crystallization, then carries out the growth of resilient coating 131.
Weak mechanical strength layer 120, its surface does not infiltrate the GaN of N-shaped, impels resilient coating 131 cross growths, has stoped extending upward of crystal defect, has improved the quality of GaN crystal.Nonwettable surface is less to the adhesion of epitaxial layer of gallium nitride in addition, is beneficial to peeling off of substrate.
(2) weak mechanical strength layer 120
Weak mechanical strength layer 120 must at high temperature keep stable, and provides the gallium nitride transversal epitaxial growth required mask.
Weak mechanical strength layer 120 lower floor are metal level 121, can be gold, aluminium, silver, molybdenum etc., this example choosing gold.Gold surface covers one deck SiO2 or SiN passivation layer 122, and the while is as the mask of GaN epitaxial growth.
Weak mechanical strength layer 120 has the dot structure that is the point-like matrix arrangement, and dot structure partly protrudes from Sapphire Substrate 110 surfaces, and all the other go deep into Sapphire Substrate 110, thereby improves the adhesive force to Sapphire Substrate 110.Epitaxial layer of gallium nitride 130 should be the least possible with contacting of Sapphire Substrate 110 surfaces, few can peel off easily to the adhesion of epitaxial loayer 130 and Sapphire Substrate 110, but it is good enough resisting the adaptive strain of lattice, therefore the weak preferred six terrace with edge shapes of mechanical strength layer 120 point-like profile of this example.
Six terrace with edge height are not more than 3um, and this example is preferably 1.5um, and the length of side is not more than 4um, and this example is preferably 2um.Minimum spacing is not more than 2um between six terrace with edges, and this example is preferably 0.5um.
The operation principle of weak mechanical strength layer as shown in Figure 2: metal level 121 expands because of high temperature when epitaxial layer of gallium nitride 130 growth, and because passivation layer 122 does not infiltrate gallium nitride itself, therefore along with the cooling of metal level 121 is shunk, passivation layer 122 is pullled with epitaxial loayer 130 disengagings by metal level 121 and is formed hole 221 after epitaxial loayer 130 growths are finished.
The hole greatly reduces epitaxial loayer and Sapphire Substrate contact-making surface, until can epitaxial loayer and Sapphire Substrate can be stripped from easily by further fast heating and cooling.
(3) Sapphire Substrate 110.
The described weak mechanical strength layer of this example adopts following manufacture method (Fig. 3):
Step 310: the Sapphire Substrate pattern mask is made
At Sapphire Substrate 110 deposition one deck masks 312, and graphical, expose the hole 313 such as diameter 2um, the spacing 3.25um that is matrix 314 arrangements.The material of mask can adopt SiO2 or photoresist according to dry method or wet etch process, or other material.
Step 320: Sapphire Substrate is graphical
Further adopt dry etching or wet etching that Sapphire Substrate 110 is carried out etching, formation is not more than 2um deeply, diameter 2um, spacing 1um are the hole 321 that matrix 314 is arranged.
Step 330: metal cladding
Can adopt electron beam evaporation process or Plasma Ion Assisted Deposition for Optical Coating to plate the metal level 331 that a layer thickness is not less than hole 321 degree of depth in patterned Sapphire Substrate, this example is got 3um.
Step 340: graphical metal level
Adopt photoetching technique and with chloroazotic acid 331 etchings of unnecessary metal level are removed, expose the Sapphire Substrate surface 342 of wide 1.5um, consist of indium metal six terrace with edges such as matrix 314 arrangements.Indium six terrace with edge length of side 1.4um.
Step 350: plating passivation layer
On graphical metal level 331, deposit again the thick SiO2 passivation layer 361 of one deck 0.5-1um first, adopt again photoetching technique and with chloroazotic acid unnecessary SiO2 etching is removed, expose the Sapphire Substrate surface 362 of wide 0.5um, consist of the weak mechanical strength layer 120 of six terrace with edge shapes.
After the manufacturing of finishing weak mechanical strength layer 120, Sapphire Substrate 110 is namely carried out epitaxial loayer 130 growths of gallium nitride.Epitaxial layer of gallium nitride 130 growths adopt general two-step method to carry out.Under nitrogen atmosphere, substrate is carried out first 1050 ℃ of high temperature sinterings of 10min, remove Sapphire Substrate 110 surface impurities.Because of the protection of 122 pairs of metal levels 121 of passivation layer, the structure of weak mechanical strength layer 120 is not destroyed at high temperature.Be cooled to again the 500-550 ℃ of thick not Doped GaN of deposition one deck 20-30nm after finishing high temperature sintering, then under nitrogen atmosphere, be warming up to 1040-1050 ℃ of crystallization, form stratum nucleare.Then proceed not mix or N-shaped GaN growth and be cooled to 900-950 ℃, continue approximately 500-1000s, the intensification of walking unhurriedly is again gone up in 500-1000s to 1040-1050 ℃, the not doping of continued growth 2um or N-shaped GaN.Through as above step, weak mechanical strength layer 120 is covered fully by gallium nitride.Because of the three-dimensional crystal growth pattern, the most of defective in the gallium nitride is converted to crosswise development, has reduced the defect concentration of gallium nitride.On this basis, continue the growth of the extension luminescent layer of LED, until epitaxial loayer is finished growth.
After finishing epitaxial loayer 130 growths of whole LED ray structure, the transfer of Sapphire Substrate 110 is carried out in reference as shown in Figure 4 method, and its step is as follows:
Step 410: plating p-type electrode
At first according to the manufacture method of the general p-type electrode of LED, at p-type GaN layer 134(Fig. 1) the transparency conducting layer ITO414 of deposition thick layer 200-250nm.On ITO414, deposit again the thick electrode of one deck 1um 415.For improving light extraction efficiency, also can plate the reflector of one deck high reflectance.
For making things convenient for peeling off of Sapphire Substrate 110, also can first Sapphire Substrate 110 be passed through to grind attenuate, make the crystal grain of required size specification.
Step 420: welding supporting substrate
Adopt the general semiconductor solder technology, the copper base 421 that scribbles golden tin solder is close to the epitaxial wafer 130 that is coated with gold electrode, and is carried out 10-20min280-300 ℃ of annealing, make copper base 421 tight with epitaxial wafer 130 welderings.
Step 430: mechanical assistance is peeled off Sapphire Substrate 110
The rapid temperature rise and drop that epitaxial wafer 130 is carried out more than 50 times-30 ℃ to 120 ℃ is processed, and alternating temperature speed is not to damage epitaxial wafer 130 for easy, and this example is optimized for and is not more than 50 ℃/min, further is optimized for 30 ℃/min.The intrinsic thermal deformation of the rapid thermal strain of metal level and gallium nitride and sapphire itself is poor, and weak mechanical strength layer 120 is broken away from fully with epitaxial loayer 130.
Use blue film to stick on the Sapphire Substrate 110, by tearing blue film off Sapphire Substrate 110 is peeled off.Stay remaining epitaxial loayer 130 to be supported by copper base 421, conveniently to carry out next step chip manufacturing.
The epitaxial loayer 130 that is transferred to copper base 421 can carry out according to general chip processing procedure, only sketches herein.
The epitaxial loayer 130 that copper base 421 shifts exposes resilient coating 131.Be undoped GaN such as resilient coating, must carry out etching and remove.Be N-shaped GaN such as resilient coating, can directly plate thereon metal, make N-shaped electrode 530.The chip that completes has vertical stratification as shown in Figure 5, and it has from top to bottom: N-shaped electrode 530, luminous epitaxial loayer 130, as the copper base 421 of the heat-conductivity conducting of p-type electrode.
The manufacture method of the vertical structure LED shown in this example, utilize metal level thermal denaturation, passivation layer 122 not to infiltrate with epitaxial loayer 130, and utilize the mask transverse epitaxial growth technology, when improving epitaxial loayer 130 growth qualities, realize the possibility that epitaxial loayer 130 and Sapphire Substrate 110 are peeled off, and by to epitaxial loayer 130 repeated multiple times heating and cooling process, further reduce the adhesion of weak 120 pairs of epitaxial loayer 130 of mechanical strength layer, realized that the integral body of the batch of epitaxial loayer 130 peels off, greatly improved production efficiency.
In addition, those skilled in the art also can do other variation in spirit of the present invention.Certainly, the variation that these are done according to spirit of the present invention all should be included in the present invention's scope required for protection.
Claims (10)
1. the gallium nitride film preparation epitaxial structure that can certainly peel off of a Sapphire Substrate, it comprises the epitaxial loayer on top and the Sapphire Substrate of bottom, it is characterized in that, between epitaxial loayer and Sapphire Substrate, be provided with weak mechanical strength layer, weak mechanical strength layer comprises some dots structures of rectangular arrangement, dots structure partly protrudes from the Sapphire Substrate surface, and remainder gos deep into Sapphire Substrate; Epitaxial loayer and Sapphire Substrate Surface Contact are the least possible.
2. the gallium nitride film preparation epitaxial structure that can certainly peel off of Sapphire Substrate as claimed in claim 1, it is characterized in that, described dots structure is six terrace with edges, round platform or hemispherical, and the bottom of each dots structure is embedded in the Sapphire Substrate, and the interval exposes the surface of Sapphire Substrate in the dot matrix; Each dots structure comprises a metal level, and metal level three faces are wrapped in the passivation layer, and the metal level bottom surface contacts with Sapphire Substrate, as Sapphire Substrate surface graphics mask.
3. epitaxial structure is used in the gallium nitride film preparation that can certainly peel off of Sapphire Substrate as claimed in claim 2, it is characterized in that, described six terrace with edge shapes highly are not more than 3um, and elongated ratio is greater than 4um, and six terrace with edge minimum spacings are not more than 2um.
4. epitaxial structure is used in the gallium nitride film preparation that can certainly peel off of Sapphire Substrate as claimed in claim 1, it is characterized in that, described epitaxial loayer comprises from top to bottom at least: p-type GaN, multiple InGaN/GaN quantum well, N-shaped GaN and resilient coating.
5. epitaxial structure is used in the gallium nitride film preparation that can certainly peel off of Sapphire Substrate as claimed in claim 4, it is characterized in that, described epitaxy layer thickness is not less than 6um, and resilient coating must be enough to cover weak mechanical strength layer.
6. epitaxial structure is used in the gallium nitride film preparation that can certainly peel off of Sapphire Substrate as claimed in claim 4, it is characterized in that, is provided with one deck AlGaN between described N-shaped GaN and resilient coating.
7. epitaxial structure is used in the gallium nitride film preparation that can certainly peel off of Sapphire Substrate as claimed in claim 2, it is characterized in that, described passivation material is SiO2 or SiN.
8. the Sapphire Substrate stripping means of the arbitrary described epitaxial structure of claim 1-7 is characterized in that, detailed process is:
Step 1 is at the weak mechanical strength layer of Sapphire Substrate preparation;
Step 2 is carried out the outer layer growth of gallium nitride, weak mechanical strength layer is covered fully, until p-type GaN finishes growth;
Step 3 after finishing whole epitaxial growth, at epitaxial wafer top plating p-type electrode, at the supporting substrate of p-type electrode welding heat-conductivity conducting, adopts mechanical assistance mode glass Sapphire Substrate, stays remaining epitaxial loayer by base plate supports;
Step 4 after etch buffer layer taken out, is carried out chip manufacture, and the chip that completes has from top to bottom: N-shaped electrode, luminous epitaxial loayer, as the heat-conductivity conducting substrate of p-type electrode.
9. Sapphire Substrate stripping means as claimed in claim 8 is characterized in that, the detailed process of described step 1 is:
Step 1-1, Sapphire Substrate is carried out pattern mask and is made:
At Sapphire Substrate deposition one deck mask, and graphical, form rectangular hole of arranging;
Step 1-2: Sapphire Substrate is graphical
Further adopt dry etching or wet etching that Sapphire Substrate is carried out etching, form the hole corresponding with the hole of mask;
Step 1-3: metal cladding
Plate the metal level that a layer thickness is not less than the hole degree of depth in patterned Sapphire Substrate;
Step 1-4: graphical metal level
Etching metal layer unnecessary between each hole is removed, exposed corresponding Sapphire Substrate surface;
Step 1-5: plating passivation layer
On graphical metal level, deposit again the thick SiO2 passivation layer of one deck 0.5-1um first, again SiO2 passivation layer etching unnecessary between hole is removed, expose corresponding Sapphire Substrate surface; Finish the preparation of weak mechanical strength layer.
10. Sapphire Substrate stripping means as claimed in claim 8 is characterized in that, the detailed process of described step 3 is:
Step 3-1, plating p-type electrode
At first at the transparency conducting layer ITO of p-type GaN layer deposition thick layer 200-250nm, on ITO, deposit again the thick gold electrode of one deck 1um;
Step 3-2, the welding supporting substrate
The heat-conductivity conducting substrate that scribbles golden tin solder is close to the epitaxial wafer that is coated with the p-type electrode, and is carried out 10-20min280-300 ℃ of annealing, make the weldering of substrate and epitaxial wafer tight;
Step 3-3, mechanical assistance is peeled off Sapphire Substrate
The rapid temperature rise and drop that epitaxial wafer is carried out more than 50 times-30 ℃ to 120 ℃ is processed, and alternating temperature speed is not to damage epitaxial loayer for easy; The intrinsic thermal deformation of the rapid thermal strain of metal level and gallium nitride and sapphire itself is poor, and weak mechanical strength layer is broken away from fully with epitaxial loayer, peels off Sapphire Substrate, and the epitaxial loayer more than staying is supported by copper base, conveniently to carry out next step chip manufacturing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310013703.3A CN103066179B (en) | 2013-01-14 | 2013-01-14 | Sapphire Substrate can from the gallium nitride film preparation epitaxial structure peeled off and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310013703.3A CN103066179B (en) | 2013-01-14 | 2013-01-14 | Sapphire Substrate can from the gallium nitride film preparation epitaxial structure peeled off and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103066179A true CN103066179A (en) | 2013-04-24 |
| CN103066179B CN103066179B (en) | 2015-12-02 |
Family
ID=48108720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310013703.3A Expired - Fee Related CN103066179B (en) | 2013-01-14 | 2013-01-14 | Sapphire Substrate can from the gallium nitride film preparation epitaxial structure peeled off and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103066179B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226155A (en) * | 2014-05-30 | 2016-01-06 | 程君 | Laminated circuit board is directly built method and the application of crystals growth LED |
| CN105762305A (en) * | 2016-04-28 | 2016-07-13 | Tcl集团股份有限公司 | Composite anode, QLED device, and preparation methods thereof |
| CN108281525A (en) * | 2017-12-07 | 2018-07-13 | 上海芯元基半导体科技有限公司 | A kind of compound substrate, semiconductor device structure and preparation method thereof |
| CN114094439A (en) * | 2021-10-22 | 2022-02-25 | 南京邮电大学 | Gallium nitride surface emitting laser based on silicon nitride photonic crystal and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060080827A (en) * | 2005-01-06 | 2006-07-11 | 엘지전자 주식회사 | Method for lifting off sapphire substrate from epi-layer in light emitting device |
| US20100317131A1 (en) * | 2008-01-20 | 2010-12-16 | Lg Innotek Co., Ltd. | Method for manufacturing light emitting device |
| CN102117869A (en) * | 2011-01-21 | 2011-07-06 | 厦门市三安光电科技有限公司 | Method for stripping substrate of LED |
| CN102723264A (en) * | 2011-03-29 | 2012-10-10 | 清华大学 | Preparation method for substrate with nanometer microstructure |
-
2013
- 2013-01-14 CN CN201310013703.3A patent/CN103066179B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060080827A (en) * | 2005-01-06 | 2006-07-11 | 엘지전자 주식회사 | Method for lifting off sapphire substrate from epi-layer in light emitting device |
| US20100317131A1 (en) * | 2008-01-20 | 2010-12-16 | Lg Innotek Co., Ltd. | Method for manufacturing light emitting device |
| CN102117869A (en) * | 2011-01-21 | 2011-07-06 | 厦门市三安光电科技有限公司 | Method for stripping substrate of LED |
| CN102723264A (en) * | 2011-03-29 | 2012-10-10 | 清华大学 | Preparation method for substrate with nanometer microstructure |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226155A (en) * | 2014-05-30 | 2016-01-06 | 程君 | Laminated circuit board is directly built method and the application of crystals growth LED |
| CN105762305A (en) * | 2016-04-28 | 2016-07-13 | Tcl集团股份有限公司 | Composite anode, QLED device, and preparation methods thereof |
| CN108281525A (en) * | 2017-12-07 | 2018-07-13 | 上海芯元基半导体科技有限公司 | A kind of compound substrate, semiconductor device structure and preparation method thereof |
| CN114094439A (en) * | 2021-10-22 | 2022-02-25 | 南京邮电大学 | Gallium nitride surface emitting laser based on silicon nitride photonic crystal and preparation method thereof |
| CN114094439B (en) * | 2021-10-22 | 2023-12-12 | 南京邮电大学 | Gallium nitride surface emitting laser based on silicon nitride photonic crystal and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103066179B (en) | 2015-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101969089B (en) | Method for manufacturing gallium nitride-based light-emitting diode with current barrier layer | |
| CN104617195B (en) | A kind of near-infrared luminous diode and its production method | |
| EP2259344B1 (en) | Light emitting device and manufacturing method for same | |
| US8168455B2 (en) | Method for manufacturing light emitting diode | |
| CN102916028B (en) | LED (light emitting diode) array and manufacturing method thereof | |
| CN101834251B (en) | Manufacturing method of light emitting diode chip | |
| CN102017193A (en) | Semiconductor light-emitting device with double-sided passivation | |
| CN102067345A (en) | Method for fabricating semiconductor light-emitting device with double-sided passivation | |
| CN102779911A (en) | Fabricating method of GaN-based light-emitting component with vertical structure | |
| CN102054911A (en) | Light-emitting diode chip and manufacturing method thereof and light-emitting diode with chip | |
| CN105655462A (en) | High-voltage direct-current GaN-based light emitting diode and preparation method thereof | |
| CN102790045A (en) | Light emitting diode array and manufacturing method thereof | |
| CN111063778A (en) | Light-emitting diode structure | |
| CN103066179A (en) | Epitaxial structure and method for preparation of self-peeling gallium nitride thin film of sapphire substrate | |
| JP6519593B2 (en) | Light emitting element and method of manufacturing light emitting element | |
| TWI488334B (en) | Light-emitting device and manufacturing method thereof | |
| CN104465899A (en) | Preparation method for LED perpendicular structure | |
| CN102067340B (en) | Semiconductor light-emitting device with passivation in p-type layer | |
| CN103474529B (en) | A kind of preparation method of vertical LED chip and vertical LED chip | |
| CN108400213A (en) | The LED chip and preparation method thereof of through-hole superstructure with duty ratio optimization | |
| CN215342638U (en) | LED chip structure and display module | |
| CN111063779A (en) | Preparation method and application of light-emitting diode structure | |
| CN214336736U (en) | LED chip structure of double-layer ITO film | |
| CN102623589A (en) | Manufacturing method of semiconductor light-emitting device with vertical structure | |
| CN102800779A (en) | Light-emitting diode (LED) wafer for graphene electrode and manufacturing method for LED wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151202 Termination date: 20170114 |