CN104218137B - LED light substrate, LED chip COB encapsulating structures and using the structure LED - Google Patents
LED light substrate, LED chip COB encapsulating structures and using the structure LED Download PDFInfo
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- CN104218137B CN104218137B CN201310225255.3A CN201310225255A CN104218137B CN 104218137 B CN104218137 B CN 104218137B CN 201310225255 A CN201310225255 A CN 201310225255A CN 104218137 B CN104218137 B CN 104218137B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
LED light substrate, LED chip COB encapsulating structures and using the structure LED.LED chip COB encapsulating structures therein include：One or more LED light substrate（10）, each LED light substrate include：Jointed anode（A+）P type semiconductor layer（P）；Connect negative electrode（A‑）N type semiconductor layer（N）；And the luminous PN junction layer formed between the p type semiconductor layer and n type semiconductor layer（102）, wherein described negative electrode（A‑）Be transparency electrode and by conduction transparent substrate（T）Combined with described n type semiconductor layer；The LED chip COB encapsulating structures also include transparent substrates（110）, it is used to carry the luminous substrates of one or more of LED（10）, the transparent substrates（110）Side and one or more of LED light substrate（10）Negative electrode（A‑）With reference to opposite side and a reflective structure layer（R）With reference to.
Description
Technical field
The present invention relates to the COB of LED encapsulation structure, more particularly to LED chip（chip-on-board）Encapsulating structure.This
Invention further relates to the LED made using LED chip made of the LED encapsulation structure.
Background technology
LED will undoubtedly turn into many one preferred techniques such as green illumination, economize on electricity and environmental protection.But can in LED
Really it is widely used in before every field, still there are many technical issues that need to address.Such as LED light ejection efficiency needs
Further to improve with the requirement suitable for practical application.
The encapsulation technology that LED light ejection efficiency and its use is closely related.Wherein COB encapsulation technologies are to develop in the recent period
A kind of more form of next use.Especially general lighting LED, LED chip development is most of to use this encapsulation.It is led
Wanting reason is, the higher light transmittance of generalized lighting requirements, while LED light source requirement reaches certain power, and COB packing forms
Different shape can easily be met（Such as rectangle, circle, polygon）With the demand of size expansion, can adapt to commonly shine again
The needs of relatively high power required for bright.
Common COB encapsulation is usually to use aluminium or ceramic substrate, also has proposition using molybdenum base plate come more preferable in the industry recently
Ground solves chip to substrate heat conduction, heat dissipation problem, and this is a kind of passive caving-in bash in fact.Because solve COB chip works
It should realize the ejection efficiency for further improving photon to make that heat is big, realizes effective chip heat pipe to manage most positive method,
I.e.：So that the electric energy for importing chip is more converted into light, and photon can more efficiently escape into outer space into
For useful light source rather than it is changed into heat.But in view of baseplate material and the existing design of substrate that COB encapsulation at present uses
Technology, it is difficult to the efficiency for further improving photon effusion/extraction.
Referring specifically to Fig. 1, a kind of COB encapsulating structures of the most common LED chip of prior art are illustrated therein is.Such as Fig. 1
It is shown, wherein left side is the schematic diagram of a COB packaging LED chips 100.Chip attachment face is amplified by justifying the area that S is enclosed
The cross-section structure of the COB encapsulation chips 100 on right side is formed afterwards, wherein being successively from top to bottom：Fluorescent material and transparent silica gel
101st, light PN junction 102, chip substrate 103, mounted substrate 104.
As shown in fig. 1, either using rectangle or circular package, because the mounted substrate that carry LED chip is
It is made up of complete light-proof material, even if employing substrate desquamation technology, using the material such as transparency electrode and transparent die bond cream, from
The photon of chip attachment substrate side effusion can not escape into exterior space, but be absorbed by substrate surface, or occur anti-
Penetrate, reflect and be again introduced into chip.Into this photon kinetic energy after chip typically in the chips by complicated diffusion path
And absorbed by chip and be converted to harmful heat.
As background technology, the representative instance for being related to above-mentioned COB packaging LED chips may be referred to disclosed Chinese patent
Apply for CN1702862A（The applying date：On April 20th, 2005；Application number：200510034332.2；Publication date：November 30 in 2005
Day）.
The content of the invention
Present invention seek to address that the above mentioned problem in prior art, effect is drawn so as to provide a kind of light that can improve LED
The LED of rate light LED chip that substrate, substrate that the LED lights carry out COB encapsulation and formed COB encapsulating structures and adopt
The LED made of the LED chip.
According to the technical scheme of the present invention, there is provided a kind of LED lights substrate, and it includes：The p-type of jointed anode is partly led
Body layer, the n type semiconductor layer for connecting negative electrode and the luminous PN formed between the p type semiconductor layer and n type semiconductor layer
Tie layer；Characterized in that, wherein described negative electrode is transparency electrode and partly led with described N-type by the transparent substrate of conduction
Body layer combines.
According to the technical scheme of the present invention, there is provided a kind of to realize that the luminous substrates of LED for the invention described above are carried out
The LED core chip package of COB encapsulation, it is characterised in that including：Transparent substrates, for carrying the luminous substrates of one LED
Or the luminous substrate arrays of LED that the luminous substrates of multiple LED are formed, its side is combined with the negative electrode of the LED chip array, another
Side is combined with a reflective structure layer.
In a preferred embodiment of the invention, according to the difference of the COB of the formation LED chip sizes encapsulated, described is saturating
The thickness of photopolymer substrate is selected in 1mm between 2mm, and material can be from the polycrystal alumina, high-boron-silicon glass or high heat conduction of printing opacity
Selected in high polymer material.And described reflective structure layer can be by metal material layer（Such as the plated film of aluminium foil, chromium or nickel）Or
Nonmetallic materials（The ceramic powder of good heat dissipation, such as silicon nitride）Coating（Such as vacuum coating）Form.And described is reflective
Structure sheaf can be plane, it is possible to have regular concavo-convex fluctuating geometric form reflecting surface, such as inclined-plane or the conical surface and other
Suitable curved surface, the photon that described luminous PN junction layer is issued to up to the reflective structure layer is reflexed to so as to effectively described
The exterior space of the anode side of LED chip.In design, the luminous substrates of a LED used or the luminous substrate shapes of multiple LED
Into the luminous geometry for having determination between substrate and described reflective structure layer of each LED that lights in substrate array of LED
Corresponding relation, such as the corresponding reflecting surface structure of the luminous substrates of each LED, such as a reflection conical surface；Or the luminous bases of LED
The corresponding reflecting surface structure of the luminous substrates of each row/column LED in chip arrays, such as a reflecting slant.
Present invention also offers the LED that the LED chip using above-mentioned COB encapsulation makes.When using according in the present invention
When stating the LED chip making lighting device of the COB encapsulation of structure, due to passing through transparent lining from the photon that luminous PN junction layer is sent
The exterior space of the anode side of the LED chip is reflexed to after bottom T, transparent cathode and transparent substrates by reflective structure layer,
Become using up for the lighting device, so as to while the ejection efficiency of light of LED chip is improved, reduce the LED core
The operating temperature of piece, and then improve while the energy is saved the service life of LED chip used.
Brief description of the drawings
Fig. 1 shows a kind of COB encapsulating structures of LED chip of prior art；
Fig. 2 is the structural representation according to the LED substrates of the present invention；
Fig. 3 shows a kind of schematic diagram of the COB encapsulating structures of LED chip according to basic idea of the present invention；
Fig. 3 a and Fig. 3 b show the preferred embodiment Ra and Rb of two kinds of reflective structure layer R according to present invention signal
Figure；
Fig. 4 a and Fig. 4 b show the transparent substrates respectively with reflection layer structure Ra and Rb shown in Fig. 3 a and Fig. 3 b
110a and 110b schematic diagram；
Fig. 5 a and Fig. 5 b show the transparent substrates 110a and 110b that Fig. 4 a and Fig. 4 b formation is respectively adopted and the sheet that forms
The COB encapsulating structures of the LED chip of invention；
Fig. 6 is the partial schematic diagram taken out from the COB encapsulating structures 100a of Fig. 5 a LED chip of the invention,
For the principle for the COB encapsulating structure photon ejection efficiencies for illustrating LED chip of the invention；And
Fig. 7 is the actual circuit signal formed using the COB encapsulating structures 100b of Fig. 5 b LED chip of the invention
Figure.
Embodiment
Illustrated below in conjunction with the preferred embodiment shown by accompanying drawing for the present invention.
Realize that the pith of the present invention is the LED substrates to form a kind of transparent two sides, Fig. 2 be show it is this
The structural representation of LED substrates, this substrate are also a luminous elementary cell." particle " luminous as one, it is comprehensive
Consider the parameter request of the manufacture craft of LED substrates and desired LED product in the prior art, its size range be 1 to
4mm2。
With reference to figure 2, there is shown with LED substrates 10 include：Anode A+, p type semiconductor layer P, n type semiconductor layer N, formed
Luminous PN junction layer 102, substrate layer T, negative electrode A- between the p type semiconductor layer and n type semiconductor layer.
Wherein most, the i.e. anode A of LED substrates 10+, p type semiconductor layer P, n type semiconductor layer N, formed in the P
Luminous PN junction layer 102 between type semiconductor layer and n type semiconductor layer, there is identical knot with the corresponding part in prior art
Structure and characteristic.But feature different from prior art and as the present invention is：Substrate layer T is the substrate of printing opacity（And have
It is lighttight substrate in technology）And used negative electrode A- is also transparency electrode.Clearly as employ light-transmissive substrates layer
T and transparent cathode A-, then the light that the luminous PN junction layer 102 in the LED substrates being thusly-formed is sent can be to p type semiconductor layer P
The outside of side and the outside of n type semiconductor layer N sides substantially equally radiate.
The making of the LED substrates 10 required for the present invention can be realized by processing LED substrates of the prior art.Example
Such as, it is by having belonged to the etch process of maturation at present that the opaque chip substrate of finished product LED substrates of the prior art is almost complete
Portion is peeled off, by the atomic residual fraction of thickness（Also referred to as " residual substrate "）The light-transmissive substrates layer T formed required for the present invention.Thing
In reality, because the thickness of residual substrate now has reached close to molecular dimension level（Such as 100nm）, its light transmittance can arrive
Up to more than 70%, so as to form the light-transmissive substrates layer T required for the satisfaction present invention.Light-transmissive substrates layer T in Fig. 2 is a signal
Property expression, in order to understand the present invention implementation process in light-transmissive substrates layer T presence.In fact, to related N-type
Semiconductor layer N compares with thickness possessed by transparent cathode A-, and light-transmissive substrates layer T thickness can be ignored.Then,
Transparent cathode A- is formed on light-transmissive substrates layer T.
For exemplified by the LED chip of GaN layer is grown using sapphire as backing material and on saphire substrate material
The stripping technology of bright above-mentioned LED chip substrate.Specifically, pulsed excimer laser lift-off technique can be used, for example, it is high
The 248nm pulsed excimer laser techniques of energy.During laser lift-off, LED chip is directly by high-energy-density
The irradiation of UV laser pulses, it is transparent for 248nm laser because Sapphire Substrate band gap is very high, so swashing
Light pulse can get to GaN layer through Sapphire Substrate, and at GaN layer and sapphire articulamentum（About 2nm）It can absorb strongly purple
Outer laser energy, it is 800~900J/cm in laser energy density2When, the temperatures at localized regions of articulamentum can reach about
1000 DEG C, the material of articulamentum is caused to produce gasification, so that Sapphire Substrate and GaN layer safe separating.
Laser lift-off is easier to realize for the excimer laser using independent design, using quasi-molecule
It is then a kind of effective process meanses that laser lift-off equipment, which removes sapphire, in the preparation of the highlighted LED chip of a new generation, it will
As indispensable key technology.
With the development of 248nm excimer laser technologies so that laser output pulse energy can reach more than 1J.It is former
Some laser lift-off techniques need to use 500mJ laser pulse, and one 6 inches of chip needs 1500 pulses can be complete
Fully stripped.And the excimer laser of 50Hz repetition rates is used now, it is only necessary to which can completes this task within 30 seconds.With
The progress of excimer laser technology, laser lift-off technique will obtain great development in high brightness LED chip manufacturing.Pass through
Above-mentioned pulsed excimer laser lift-off technique, realize transparent cathode A- and a light-transmissive substrates layer T combination.
Fig. 3 shows an a kind of partial illustrations of the COB encapsulating structures of LED chip according to basic idea of the present invention.
As shown in Figure 3, the COB encapsulating structures of the LED chip include LED substrates 10 of the invention as shown in Figure 2, transparent substrates
The 110 and reflective structure layer R of the catoptric arrangement as light.I.e.：Carry on the side of transparent substrates 110 according to the present invention's
One or more LED light substrate 10（Combined with the luminous negative electrode A- of substrate 10 of the LED）, opposite side then combines a reflective structure
Layer R.
Realize that another pith of the present invention is to form a reflective structure layer R, for by above-mentioned transparent two sides
The light that sends of LED substrates 10 reflex to opposite side from side, i.e.,：PN junction layer 102 is sent and through transparent substrate T and thoroughly
Bright negative electrode A- and be irradiated to the present invention reflective structure layer R on light reflex to p type semiconductor layer P sides as much as possible, from
And improve the utilization rate of the light of the LED substrates 10 of the present invention formed with using up.
Fig. 3 a and Fig. 3 b show the schematic diagram of two kinds of exemplary reflective structure layer R according to the present invention.Wherein Fig. 3 a
It is a slant reflection layer（Corrugation）Structure Ra, Fig. 3 b are a distribution conical reflecting Rotating fields Rb.It should be noted that realize this hair
The available reflective structure layer of bright design is not limited to the situation in Fig. 3 a shown and Fig. 3 b, in principle, helps to carry out
The structure with regular concavo-convex fluctuating geometric form reflecting surface of light reflection may serve to realize the present invention.Such as Fig. 3 b can be made
In the straight line of the conical surface be changed into for example hyp other curves, so as to preferably be applied to what made COB was encapsulated
LED chip used unit parameter（Such as the size of LED substrates, transparent substrate T material and thickness, transparent cathode A- material
Material and thickness, the material of transparent substrates 110 and thickness etc.）Concrete condition.
Fig. 4 a and Fig. 4 b are the transparent substrates 110a and 110b for having respectively reflective structure layer Ra and Rb shown in Fig. 3 a, 3b
Schematic diagram.From the figure, it can be seen that reflective structure layer Ra and Rb are formed in described transparent substrates 110a and 110b downside
On surface.Transparent substrates 110a and 110b material can be from the polycrystal aluminas of printing opacity（PCA）, high-boron-silicon glass or high heat conduction
Selected in high polymer material, its thickness can be selected in 1mm between 2mm according to the demand of product.According to for realizing printing opacity base
The plasticity for the material that plate 110a and 110b make, it may be considered that transparent substrates 110a is molded by the way of mold/molding
And 110b, then by traditional vacuum coating technique by the metals such as metallic aluminium, chromium, nickel, or magnesium fluoride, silicon monoxide, zinc sulphide
Alternately it is deposited etc. nonmetallic materials, so as to form high-efficiency reflective film on reflective structure layer Ra and Rb, can will reaches reflective structure
Light on layer Ra and Rb more than 70% is reflected.Coating operation can be carried out on conventional vacuum coating machine, after the completion of plated film
Solid film 24 hours in 400 DEG C of baking ovens are needed, to ensure the firm of film layer.
Fig. 5 a and Fig. 5 b are schematic diagrames, respectively illustrate what is formed using the transparent substrates 110a and 110b in Fig. 4 a, 4b
COB the encapsulating structures 100a and 100b of LED chip.Now, transparent substrates 110a and 110b upper surface is disposed with LED substrates 10
Array.The array of LED substrates 10 is arranged as and reflective structure layer Ra（Or Rb）Regular concavo-convex fluctuating geometric form reflecting surface between protect
Hold the corresponding geometry site of determination.Such as seen in figure, remove outside the symmetry with distribution, each（Or
One group）LED substrates 10 correspond to a geometry reflecting surface, such as one group of LED substrate 10 in fig 5 a（It is a row in Fig. 5 a）
Center make a decision on inclined-plane（Corrugation）On the rib ridge line of structure.And for example the center of each LED substrate 10 in Fig. 5 b is aligned
The vertex of a cone of one conical reflecting surface.
Illustrate that the COB encapsulating structures of the LED chip of the present invention improve the principle of photon ejection efficiency below by Fig. 6.
Wherein Fig. 6 is the partial cross section signal taken out from the COB encapsulating structures 100b of the LED chip of the invention shown in Fig. 5 b
Figure, is the office for obtaining a LED chip and a corresponding conical reflecting surface from the vertical incision of its vertex of a cone specifically
Portion's schematic cross-section.
As can be seen from Fig. 6, the light that the luminous PN junction layer of LED substrates 10 is sent can be by transparent cathode A-, transparent substrates
110b is projected on reflective structure layer Rb, is drawn after being reflected by reflective structure layer Rb from transparent substrates 110b（Secondary extraction）Turn into
Have and use light L.It will can only turn into the secondary extraction of photon of damaging heat in prior art originally in this manner, so as to improve
The ejection efficiency of photon.It is visible in Fig. 6, work as cone-apex angle（d+d’）During change, had by what reflective structure layer Rb was reflected with light L's
Exit direction can also change, cone-apex angle（d+d’）Size need determined according to the application purpose that product is made.The cone-apex angle
（d+d’）The preferred value of angle can contemplate selection at 45 °<d=d’<In the range of 90 °.
Wherein, the size of LED substrates 10 and quantity, transparent substrates 110a/110b area and the thickness, the reflection knot that use
The shape of structure and reflective structure layer Ra/Rb selection are all the parameters that need to be determined, the specific power for needing basis that product is made, are answered
Considered as a whole with factors such as occasions.For example, when making road lamp using Fig. 6 cellular construction, preferable parameter is：Using face
Product is arranged in long 40mm × wide 12mm × thick 1.3mm's after amounting to 12 strings-and connection for 3.5mm × 1.2mm LED chip
On the substrate of COB encapsulation, and put identical fluorescent material and driven using identical driver, under each comfortable 25 DEG C of environment
Tested after steady operation 1h.Test result is as follows：Prior art（Substrate is unstripped）Input voltage DC9V, input current
100mA, power 0.9W, light lead to for 85.3lm, and it is 94.78lm/W to convert into light efficiency；The technology of the present invention（Take substrate desquamation）It is defeated
Enter voltage DC9V, input current 98.9MA, input power 0.89W, light leads to 97.1lm, and it is 109.1lm/W to convert into light efficiency, relatively more existing
The light efficiency for having technology improves 15%.
Fig. 7 is the actual circuit signal formed using the COB encapsulating structures 100b of Fig. 5 b LED chip of the invention
Figure.It may be considered the COB encapsulation using Fig. 4 a substrate 110a simplest LED chip realized.One row LED substrates
10 series connection after make a decision on transparency carrier 110a with inclined-plane（Corrugation）Reflecting layer Ra rib ridge alignment.Under reflective structure layer Ra
Solder w filled with the good tin AI alloy component of heat conductivility in portion space（For example, chip die bond cream）.As shown in fig. 7,
The substrate 110a and metal base plate K of solder will be filled（For example, copper foil）With reference to, such as by being heated while uniform pressure
To 300 DEG C or so, then slowly cool down to realize substrate 110a and metal base plate K combination.
The data of measurement fully show that the COB encapsulating structures of LED chip of the invention are improving drawing for the light of LED chip
While going out efficiency, the operating temperature of the LED chip is reduced, and then LED chip used is improved while the energy is saved
Service life.
By taking the actual circuit shown in Fig. 7 as an example, under conditions of other parts keep constant, using the invention described above
LED substrates simultaneously coordinate transparent cathode and transparent substrates and reflective structure layer so that the ejection efficiency of light is by currently available technology
30% or so brings up to 45%, and temperature during steady operation reduces 25 DEG C, and the calculated value of working life is doubled.
Claims (9)
- The substrate (10) 1. a kind of LED lights, it includes：The p type semiconductor layer (P) of jointed anode (A+)；Connect the n type semiconductor layer (N) of negative electrode (A-)；AndThe luminous PN junction layer (102) formed between the p type semiconductor layer and n type semiconductor layer；Characterized in that,Described negative electrode (A-) is transparency electrode and combined by the light-transmissive substrates layer (T) of conduction with described n type semiconductor layer； AndThe light-transmissive substrates layer is the light-transmissive substrates layer that the thickness formed by opaque chip substrate reaches molecular dimension level.
- 2. a kind of LED chip COB encapsulating structures, including：One or more LED light substrate (10), and each LED substrates that light include：The p type semiconductor layer (P) of jointed anode (A+)；Connect the n type semiconductor layer (N) of negative electrode (A-)；AndThe luminous PN junction layer (102) formed between the p type semiconductor layer and n type semiconductor layer；Wherein,Described negative electrode (A-) is transparency electrode and combined by the light-transmissive substrates layer (T) of conduction with described n type semiconductor layer； AndThe light-transmissive substrates layer is the light-transmissive substrates layer that the thickness formed by opaque chip substrate reaches molecular dimension level；AndTransparent substrates (110), it is used to carry the luminous substrates (10) of one or more of LED, the transparent substrates (110) Side and the negative electrode (A-) of the luminous substrates (10) of one or more of LED are combined, and opposite side and a reflective structure layer (R) are tied Close.
- 3. LED chip COB encapsulating structures according to claim 2, wherein：Described transparent substrates (110) are in 1mm to transparent ploycrystalline aluminium oxide (PCA), the high-boron-silicon glass between 2mm by thickness Or high heat conduction high polymer material is formed, and exist between described reflective structure layer (R) and the luminous substrates (10) of described LED The corresponding geometry site determined.
- 4. LED chip COB encapsulating structures according to claim 2, wherein：Described reflective structure layer (R) has regular concavo-convex fluctuating geometric form reflecting surface.
- 5. LED chip COB encapsulating structures according to claim 4, wherein：Described reflecting surface is one of inclined-plane, curved surface.
- 6. LED chip COB encapsulating structures according to claim 5, wherein：Described curved surface is the conical surface.
- 7. LED chip COB encapsulating structures according to claim 4, wherein：The reflection plated film that described reflecting surface is metal material or nonmetallic materials are formed.
- 8. LED chip COB encapsulating structures according to claim 7, wherein：The metal material that described reflection plated film uses is one of aluminium, chromium, nickel or metallic composite zinc sulphide, magnesium fluoride, institute The nonmetallic materials stated are one of ceramic powder, silica.
- A kind of 9. LED, it is characterised in thatThe LED chip COB encapsulating structures that the LED chip wherein used one of has the claims 2-8 any.
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| CN101118937A (en) * | 2006-08-02 | 2008-02-06 | 中国科学院半导体研究所 | Gallium nitride based LED device for illumination |
| CN101566323A (en) * | 2008-04-24 | 2009-10-28 | 陈宗烈 | Pipe type basic element LED and lighting device comprising same |
| CN102903798A (en) * | 2011-07-28 | 2013-01-30 | 上海博恩世通光电股份有限公司 | LED (light-emitting diode) capable of simultaneously emitting light forwardly and backwardly and manufacturing method thereof |
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| CN101566323A (en) * | 2008-04-24 | 2009-10-28 | 陈宗烈 | Pipe type basic element LED and lighting device comprising same |
| CN102903798A (en) * | 2011-07-28 | 2013-01-30 | 上海博恩世通光电股份有限公司 | LED (light-emitting diode) capable of simultaneously emitting light forwardly and backwardly and manufacturing method thereof |
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