CN104218137A - LED light-emitting substrate, LED chip COB (chip on board) package structure and LED lamp with LED chip COB package structure - Google Patents
LED light-emitting substrate, LED chip COB (chip on board) package structure and LED lamp with LED chip COB package structure Download PDFInfo
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- CN104218137A CN104218137A CN201310225255.3A CN201310225255A CN104218137A CN 104218137 A CN104218137 A CN 104218137A CN 201310225255 A CN201310225255 A CN 201310225255A CN 104218137 A CN104218137 A CN 104218137A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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Abstract
Disclosed are an LED light-emitting substrate, an LED chip COB (chip on board) package structure and an LED lamp with the LED chip COB package structure. The LED chip COB package structure comprises one or multiple LED light-emitting substrates (10); each LED light-emitting substrate comprises a P-type semiconductor layer (P) connected with an anode (A+), an N-type semiconductor layer (N) connected with a cathode (A-), and a light-emitting PN junction layer (102) formed between the P-type semiconductor layer and the N-type semiconductor layer; the cathode (A-) is a transparent electrode connected to the N-type semiconductor layer through a conductive transparent substrate layer (T); the LED chip COB package structure further comprises a light-permeable substrate (110); the light-permeable substrate (110) is used for bearing the LED light-emitting substrates (10); one side of the light-permeable substrate (110) is connected with the cathode (A-) of every LED light-emitting substrate (10), and the other side of the light-permeable substrate (110) is connected with a reflecting structure layer (R).
Description
Technical field
The present invention relates to LED encapsulation structure, particularly relate to the COB(chip-on-board of LED chip) encapsulating structure.The invention still further relates to the LED of the LED chip making adopting described LED encapsulation structure to make.
Background technology
LED will become many-sided one preferred technique such as green illumination, economize on electricity and protection of the environment undoubtedly.But before LED really can be widely used in every field, still have many technical issues that need to address.The light ejection efficiency of such as LED needs to improve with the requirement being applicable to practical application further.
The encapsulation technology that the light ejection efficiency of LED adopts with it is closely related.Wherein COB encapsulation technology is the many a kind of form of employing that immediate development is got up.Especially general lighting LED, LED chip development great majority adopt this encapsulation.Its main cause is, the light transmittance that generalized lighting requirements is higher, LED light source requires to reach certain power simultaneously, and COB packing forms can meet the demand of difformity (as rectangle, circle, polygon etc.) and size expansion easily, the needs of the relatively high power required for general lighting can be adapted to again.
Common COB encapsulation is generally adopt aluminium or ceramic substrate, and also have in the industry recently and propose to adopt molybdenum substrate to solve chip better to substrate heat conduction, heat dissipation problem, this is a kind of passive caving-in bash in fact.Because solve, COB chip operation heat is large, to realize the most positive way of effective chip heat pipe reason should be the ejection efficiency realizing improving further photon, that is: make to import the electric energy of chip and be converted into light more, and photon can escape into outer space more efficiently and becomes useful light source instead of become heat.But the baseplate material adopted in view of current COB encapsulation and the existing designing technique of substrate, it is difficult to the efficiency improving photon effusion/extraction further.
Specifically see Fig. 1, illustrated therein is the COB encapsulating structure of the modal a kind of LED chip of prior art.As shown in Figure 1, wherein left side is the schematic diagram of a COB packaging LED chips 100.Chip attachment face by the cross-section structure justifying the COB packaged chip 100 on the right side of being formed after area that S encloses amplifies, wherein from top to bottom successively: fluorescent material and transparent silica gel 101, luminous PN junction 102, chip substrate 103, mounted substrate 104.
As shown in fig. 1, no matter be adopt rectangle or circular package, because the mounted substrate that carry LED chip is made up of complete light-proof material, even if having employed substrate desquamation technology, adopt the material such as transparency electrode and transparent die bond cream, space outerpace can not be escaped into from the photon of chip attachment substrate side effusion, but absorbed by substrate surface, or reflect, reflect and again enter chip.Enter this photon kinetic energy after chip and be normally converted to harmful heat through complicated diffusion path by chip absorption in the chips.
Technology as a setting, has the representative instance about above-mentioned COB packaging LED chips can with reference to the disclosed Chinese patent application CN1702862A(applying date: on April 20th, 2005; Application number: 200510034332.2; Publication date: on November 30th, 2005).
Summary of the invention
The present invention is intended to solve the problems referred to above in prior art, thus provide a kind of can improve the light ejection efficiency of LED the luminous substrate of LED, luminous for described LED substrate is carried out COB encapsulation and the COB encapsulating structure of LED chip that formed and the LED adopting this LED chip to make.
According to a technical scheme of the present invention, provide the luminous substrate of a kind of LED, it comprises: the p type semiconductor layer of jointed anode, the n type semiconductor layer connecting negative electrode and the luminous PN junction layer be formed between described p type semiconductor layer and n type semiconductor layer; It is characterized in that, wherein said negative electrode is transparency electrode and is combined with described n type semiconductor layer by the transparent substrate of conduction.
According to a technical scheme of the present invention, a kind of LED chip encapsulating structure realizing carrying out for the luminous substrate of LED of the invention described above COB encapsulation is provided, it is characterized in that comprising: transparent substrates, for carrying the luminous substrate array of LED of the luminous substrate of a described LED or the formation of multiple LED luminous substrate, its side is combined with the negative electrode of described LED chip array, and opposite side is combined with a reflective structure layer.
In a preferred embodiment of the invention, according to the difference of the LED chip size of the COB encapsulation formed, the thickness of described transparent substrates is selected between 1mm to 2mm, and material can be selected from the polycrystal alumina of printing opacity, high-boron-silicon glass or high heat-conducting polymer material.And described reflective structure layer can be made up of the coating (such as vacuum coating) of metal material layer (such as the plated film of aluminium foil, chromium or nickel) or nonmetallic materials (ceramic powder of good heat dissipation, as silicon nitride).And described reflective structure layer can be plane, also regular concavo-convex fluctuating geometric form reflecting surface can be had, such as inclined-plane or the conical surface and other curved surface be applicable to, so that the space outerpace of photon reflection to the anode side of described LED chip effectively described luminous PN junction layer being sent this reflective structure layer of arrival.In design, the geometrical correspondence determined is had between the luminous substrate of each LED in the luminous substrate array of LED that the luminous substrate of a LED used or the luminous substrate of multiple LED are formed and described reflective structure layer, the luminous substrate of such as each LED corresponding a reflecting surface structure, such as a reflection conical surface; Or the luminous substrate of each row/column LED corresponding a reflecting surface structure, the such as reflecting slant in the luminous substrate array of LED.
Present invention also offers the LED adopting the LED chip of above-mentioned COB encapsulation to make.When adopting the LED chip encapsulated according to the COB of said structure of the present invention to make lighting device, reflexed to the space outerpace of the anode side of described LED chip after by transparent substrate T, transparent cathode and transparent substrates by reflective structure layer due to the photon that sends from luminous PN junction layer, become using up of this lighting device, thus while the ejection efficiency of light improving LED chip, reduce the working temperature of this LED chip, and then improve the useful life of LED chip used while saving the energy.
Accompanying drawing explanation
Fig. 1 shows the COB encapsulating structure of a kind of LED chip of prior art;
Fig. 2 is the structural representation according to LED substrate of the present invention;
Fig. 3 shows the schematic diagram of the COB encapsulating structure of a kind of LED chip according to basic conception of the present invention;
Fig. 3 a and Fig. 3 b shows the schematic diagram of preferred embodiment Ra and Rb according to two kinds of reflective structure layer R of the present invention;
Fig. 4 a and Fig. 4 b shows the schematic diagram of transparent substrates 110a and 110b respectively with reflection layer structure Ra and Rb shown in Fig. 3 a and Fig. 3 b;
Fig. 5 a and Fig. 5 b shows the COB encapsulating structure of transparent substrates 110a and 110b adopting Fig. 4 a and Fig. 4 b to be formed respectively and the LED chip of the present invention formed;
Fig. 6 is the partial schematic diagram taken out from the COB encapsulating structure 100a of the LED chip of the present invention of Fig. 5 a, for illustration of the principle of the COB encapsulating structure photon ejection efficiency of LED chip of the present invention; And
Fig. 7 is the side circuit schematic diagram that the COB encapsulating structure 100b of the LED chip of the present invention adopting Fig. 5 b is formed.
Embodiment
Below in conjunction with the preferred embodiment shown by accompanying drawing, the present invention is described.
Realize the LED substrate that a pith of the present invention is to be formed a kind of transparent two sides, Fig. 2 shows the structural representation of this LED substrate, and this substrate is also a luminous elementary cell.As luminous " particle ", consider the parameter request of the manufacture craft of LED substrate in prior art and the LED product of expectation, its size range is at 1 to 4mm
2.
With reference to figure 2, the LED substrate 10 shown in it comprises: anode A+, p type semiconductor layer P, n type semiconductor layer N, be formed in luminous PN junction layer 102, substrate layer T, negative electrode A-between described p type semiconductor layer and n type semiconductor layer.
Wherein major part, namely LED substrate 10 anode A+, p type semiconductor layer P, n type semiconductor layer N, be formed in luminous PN junction layer 102 between described p type semiconductor layer and n type semiconductor layer, have identical structure and characteristics with the corresponding part in prior art.But, different from prior art and as feature of the present invention: substrate layer T is the substrate (and in prior art being lighttight substrate) of printing opacity and the negative electrode A-used also is transparency electrode.Obviously, owing to have employed light-transmissive substrates layer T and transparent cathode A-, then the light that the luminous PN junction layer 102 in the LED substrate so formed sends can to the outside radiation substantially equably of the outside of p type semiconductor layer P side and n type semiconductor layer N side.
The making of the LED substrate 10 wanted required for the present invention can be realized by processing LED substrate of the prior art.Such as, by having belonged to ripe etch process at present, the opaque chip substrate of finished product LED substrate of the prior art is almost all peeled off, residual fraction (also claiming " residual substrate ") atomic for thickness is formed the light-transmissive substrates layer T wanted required for the present invention.In fact, the thickness due to residual substrate now has reached close to molecular dimension level (such as 100nm), and its light transmittance can arrive more than 70%, thus formation meets the light-transmissive substrates layer T wanted required for the present invention.Light-transmissive substrates layer T in Fig. 2 is one and schematically represents, so that understand the existence of this light-transmissive substrates layer T in implementation procedure of the present invention.In fact, compare with the thickness that transparent cathode A-has with relevant n type semiconductor layer N, the thickness of this light-transmissive substrates layer T is negligible.Subsequently, light-transmissive substrates layer T forms transparent cathode A-.
The LED chip of growing GaN layer illustrates the stripping technology of above-mentioned LED chip substrate for sapphire as backing material and on saphire substrate material.Specifically, pulsed excimer laser lift-off technique can be adopted, such as high-octane 248nm pulsed excimer laser technique.In laser lift-off process, LED chip is directly subject to the irradiation of the UV laser pulses of high-energy-density, because Sapphire Substrate band gap is very high, transparent for 248nm laser, so laser pulse can get to GaN layer through Sapphire Substrate, and GaN layer and sapphire articulamentum place (about 2nm) meeting strong absorption Ultra-Violet Laser energy, be 800 ~ 900J/cm at laser energy density
2time, the temperatures at localized regions of articulamentum can reach about 1000 DEG C, causes the material producing angerization of articulamentum, thus makes Sapphire Substrate and GaN layer safe separating.
Laser lift-off realizes than being easier to for adopting the excimer laser of independent design, adopting excimer laser peel-off device to remove sapphire is then a kind of effective process means, in the preparation of the highlighted LED chip of a new generation, indispensable key technology will be become.
Along with the development of 248nm excimer laser technology, Laser output pulse energy is made to reach more than 1J.Original laser lift-off technique needs the laser pulse using 500mJ, and the wafer of 6 inches needs 1500 pulses to peel off completely.And use now the excimer laser of 50Hz repetition rate, only need just can complete this task in 30 seconds.Along with the progress of excimer laser technology, laser lift-off technique will obtain great development in high brightness LED chip manufacturing.By above-mentioned pulsed excimer laser lift-off technique, realize the combination of a transparent cathode A-and light-transmissive substrates layer T.
Fig. 3 shows a partial illustrations of the COB encapsulating structure of a kind of LED chip according to basic conception of the present invention.As shown in Figure 3, the COB encapsulating structure of this LED chip comprises the reflective structure layer R of LED substrate 10 of the present invention, transparent substrates 110 and the catoptric arrangement as light as shown in Figure 2.That is: on the side of transparent substrates 110, carry the luminous substrate 10(of one or more LED according to the present invention be combined with described LED luminous substrate 10 negative electrode A-), opposite side is then in conjunction with a reflective structure layer R.
Realize another pith of the present invention and be formation reflective structure layer R, light for being sent by the LED substrate 10 of above-mentioned transparent two sides reflexes to opposite side from side, that is: PN junction layer 102 to be sent and through transparent substrate T and transparent cathode A-and the light be irradiated on reflective structure layer R of the present invention reflexes to p type semiconductor layer P side as much as possible, thus be formed with the utilance of using up the light improving LED substrate 10 of the present invention.
Fig. 3 a and Fig. 3 b shows the schematic diagram according to two kinds of exemplary reflective structure layer R of the present invention.Wherein Fig. 3 a is slant reflection layer (corrugation) structure Ra, Fig. 3 b is a distribution conical reflecting Rotating fields Rb.Should illustrate, the available reflective structure layer realizing the present invention's design is not limited to situation in Fig. 3 a and Fig. 3 b illustrated, and in principle, the structure with regular concavo-convex fluctuating geometric form reflecting surface contributing to carrying out light reflection can be used for realizing the present invention.The straight line of the conical surface in Fig. 3 b such as can be made to become such as other curve hyp, thus the concrete condition of the LED chip used unit parameter (material of the material of the size of such as LED substrate, the material of transparent substrate T and thickness, transparent cathode A-and thickness, transparent substrates 110 and thickness etc.) of made COB encapsulation can be applicable to better.
Fig. 4 a and Fig. 4 b is the schematic diagram of transparent substrates 110a and 110b respectively with reflective structure layer Ra and Rb shown in Fig. 3 a, 3b.As we can see from the figure, reflective structure layer Ra and Rb is formed on the downside surface of described transparent substrates 110a and 110b.The material of transparent substrates 110a and 110b can be selected from the polycrystal alumina of printing opacity (PCA), high-boron-silicon glass or high heat-conducting polymer material, and its thickness can be selected between 1mm to 2mm according to the demand of product.According to the plasticity being used for realizing the material that transparent substrates 110a and 110b makes, can consider that the mode adopting mold/mold pressing carrys out shaping transparent substrates 110a and 110b, pass through traditional vacuum coating technique subsequently by metals such as metallic aluminium, chromium, nickel, or the nonmetallic materials such as magnesium fluoride, silicon monoxide, zinc sulphide replace evaporation, thus high-efficiency reflective film is formed on reflective structure layer Ra and Rb, more than 70% of the light arrived on reflective structure layer Ra and Rb can be reflected.Coating operation can carry out on conventional vacuum coating machine, and after plated film completes, needs consolidate film 24 hours in 400 DEG C of baking ovens, to ensure the firm of rete.
Fig. 5 a and Fig. 5 b is schematic diagram, respectively illustrates COB encapsulating structure 100a and 100b of the LED chip adopting transparent substrates 110a and 110b in Fig. 4 a, 4b to be formed.Now, the upper surface of transparent substrates 110a and 110b is furnished with LED substrate 10 array.LED substrate 10 arranged in arrays is and reflective structure layer Ra(or Rb) regular concavo-convex fluctuating geometric form reflecting surface between remain the corresponding geometry site determined.Such as finding in the drawings, removing has outside the symmetry of distribution, each (or one group) LED substrate 10 correspond to a geometry reflecting surface, such as, in one group of LED substrate 10(Fig. 5 a is in fig 5 a row) center make a decision on the rib crestal line of inclined-plane (corrugation) structure.The vertex of a cone of a conical reflecting surface is aimed at the center of each the LED substrate 10 and for example in Fig. 5 b.
Illustrate that the COB encapsulating structure of LED chip of the present invention improves the principle of photon ejection efficiency below by Fig. 6.Wherein Fig. 6 is a schematic partial cross-sectional view of taking out from the COB encapsulating structure 100b of the LED chip of the present invention shown in Fig. 5 b, specifically, be the schematic partial cross-sectional view obtained from the vertical incision of its vertex of a cone with a corresponding with it conical reflecting surface by a LED chip.
As can be seen from Fig. 6, the light that the luminous PN junction layer of LED substrate 10 sends can project on reflective structure layer Rb by transparent cathode A-, transparent substrates 110b, and drawing (secondary extraction) from transparent substrates 110b after being reflected by reflective structure layer Rb becomes and use light L.In this manner the photon secondary that originally can only become damaging heat in prior art is drawn, thus improve the ejection efficiency of photon.Visible in Fig. 6, when cone-apex angle (d+d ') changes, also can be changed with the exit direction of light L by having of reflecting of reflective structure layer Rb, the application purpose that the size of cone-apex angle (d+d ') needs basis to make product is determined.The preferred value of this cone-apex angle (d+d ') angle can be considered to select in the scope of 45 ° of <d=d ' <90 °.
Wherein, area and thickness, the shape of catoptric arrangement and the selection of reflective structure layer Ra/Rb of the size of LED substrate 10 and the quantity of use, transparent substrates 110a/110b are all the parameters that need determine, specifically need the factor such as power, application scenario according to making product to consider as a whole.Such as, when adopting the cellular construction of Fig. 6 to make road lamp, preferred parameter is: employing area is that the LED chip of 3.5mm × 1.2mm amounts to 12 strings-and is arranged on the substrate of COB encapsulation of long 40mm × wide 12mm × thick 1.3mm after connection, and put identical fluorescent material and utilize identical driver drives, testing after steady operation 1h under each comfortable 25 DEG C of environment.Test result is as follows: prior art (substrate is unstripped) input voltage DC9V, input current 100mA, power 0.9W, and light leads to for 85.3lm, and amounting to light efficiency is 94.78lm/W; The technology of the present invention (taking substrate desquamation) input voltage DC9V, input current 98.9MA, input power 0.89W, light leads to 97.1lm, and amounting to light efficiency is 109.1lm/W, and the light efficiency comparing prior art improves 15%.
Fig. 7 is the side circuit schematic diagram that the COB encapsulating structure 100b of the LED chip of the present invention adopting Fig. 5 b is formed.The COB encapsulation of the simplest LED chip can thinking to adopt the substrate 110a of Fig. 4 a to realize.One row LED substrate 10 makes a decision after connecting and to align with the rib ridge of inclined-plane (corrugation) reflector Ra on transparency carrier 110a.The solder w(of the good tin AI alloy component of heat conductivility is filled with such as, chip die bond cream) in the lower space of reflective structure layer Ra.As shown in Figure 7, by the substrate 110a of good for filling solder and metal base plate K(such as, Copper Foil) combine, such as, by being heated to about 300 DEG C while evenly exerting pressure, then slowly cooling realizes the combination of substrate 110a and metal base plate K.
The data measured fully show, the COB encapsulating structure of LED chip of the present invention, while the ejection efficiency of light improving LED chip, reduces the working temperature of this LED chip, and then improve the useful life of LED chip used while saving the energy.
For the side circuit shown in Fig. 7, under the condition that other part remains unchanged, adopt the LED substrate of the invention described above and coordinate transparent cathode and transparent substrates and reflective structure layer, the ejection efficiency of light is made to bring up to 45% by about 30% of currently available technology, temperature during steady operation reduces 25 DEG C, and the calculated value of working life is doubled.
Claims (8)
1. the luminous substrate (10) of LED, it comprises:
The p type semiconductor layer (P) of jointed anode (A+);
Connect the n type semiconductor layer (N) of negative electrode (A-); And
Be formed in the luminous PN junction layer (102) between described p type semiconductor layer and n type semiconductor layer; It is characterized in that,
Described negative electrode (A-) is transparency electrode and is combined with described n type semiconductor layer by the transparent substrate (T) of conduction.
2. a LED chip COB encapsulating structure, comprising:
The luminous substrate (10) of one or more LED, the luminous substrate of each LED comprises:
The p type semiconductor layer (P) of jointed anode (A+);
Connect the n type semiconductor layer (N) of negative electrode (A-); And
Be formed in the luminous PN junction layer (102) between described p type semiconductor layer and n type semiconductor layer; Wherein,
Described negative electrode (A-) is transparency electrode and is combined with described n type semiconductor layer by the transparent substrate (T) of conduction; And
Transparent substrates (110), it is for carrying the luminous substrate (10) of described one or more LED, the side of described transparent substrates (110) and the negative electrode (A-) of the luminous substrate (10) of described one or more LED combine, and opposite side and a reflective structure layer (R) combine.
3. LED chip COB encapsulating structure according to claim 2, wherein:
Described transparent substrates (110) is made up of the transparent ploycrystalline aluminium oxide of thickness between 1mm to 2mm (PCA), high-boron-silicon glass or high heat-conducting polymer material, and there is the corresponding geometry site determined between described reflective structure layer (R) with the luminous substrate (10) of described LED.
4. LED chip COB encapsulating structure according to claim 2, wherein:
Described reflective structure layer (R) has regular concavo-convex fluctuating geometric form reflecting surface.
5. LED chip COB encapsulating structure according to claim 4, wherein:
Described reflecting surface is one of inclined-plane, the conical surface, curved surface.
6. LED chip COB encapsulating structure according to claim 4, wherein:
Described reflecting surface is the reflection plated film that metal material or nonmetallic materials are formed.
7. LED chip COB encapsulating structure according to claim 6, wherein:
The metal material that described reflection plated film uses is aluminium, chromium, nickel or one of metallic composite zinc sulphide, magnesium fluoride, and described nonmetallic materials are one of ceramic powder, silica.
8. a LED, is characterized in that,
The LED chip wherein adopted has one of any LED chip COB encapsulating structure of the claims 2-7.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105280628A (en) * | 2014-07-21 | 2016-01-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Semiconductor luminescent device package structure on the basis of transparent substrate |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101118937A (en) * | 2006-08-02 | 2008-02-06 | 中国科学院半导体研究所 | Gallium nitride based LED device for illumination |
| CN101566323A (en) * | 2008-04-24 | 2009-10-28 | 陈宗烈 | Pipe type basic element LED and lighting device comprising same |
| JP2011023703A (en) * | 2009-06-17 | 2011-02-03 | Sumitomo Electric Ind Ltd | Epitaxial substrate, light-emitting element, light-emitting device, and method for producing epitaxial substrate |
| CN102623589A (en) * | 2012-03-31 | 2012-08-01 | 厦门市三安光电科技有限公司 | Manufacturing method of semiconductor light-emitting device with vertical structure |
| CN102683550A (en) * | 2012-03-06 | 2012-09-19 | 泉州市博泰半导体科技有限公司 | Semiconductor light-emitting device and manufacturing method thereof |
| CN102903798A (en) * | 2011-07-28 | 2013-01-30 | 上海博恩世通光电股份有限公司 | LED (light-emitting diode) capable of simultaneously emitting light forwardly and backwardly and manufacturing method thereof |
-
2013
- 2013-06-05 CN CN201310225255.3A patent/CN104218137B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101118937A (en) * | 2006-08-02 | 2008-02-06 | 中国科学院半导体研究所 | Gallium nitride based LED device for illumination |
| CN101566323A (en) * | 2008-04-24 | 2009-10-28 | 陈宗烈 | Pipe type basic element LED and lighting device comprising same |
| JP2011023703A (en) * | 2009-06-17 | 2011-02-03 | Sumitomo Electric Ind Ltd | Epitaxial substrate, light-emitting element, light-emitting device, and method for producing epitaxial substrate |
| CN102903798A (en) * | 2011-07-28 | 2013-01-30 | 上海博恩世通光电股份有限公司 | LED (light-emitting diode) capable of simultaneously emitting light forwardly and backwardly and manufacturing method thereof |
| CN102683550A (en) * | 2012-03-06 | 2012-09-19 | 泉州市博泰半导体科技有限公司 | Semiconductor light-emitting device and manufacturing method thereof |
| CN102623589A (en) * | 2012-03-31 | 2012-08-01 | 厦门市三安光电科技有限公司 | Manufacturing method of semiconductor light-emitting device with vertical structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105280628A (en) * | 2014-07-21 | 2016-01-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Semiconductor luminescent device package structure on the basis of transparent substrate |
| CN105280628B (en) * | 2014-07-21 | 2018-08-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Semiconductor cuminescent device package structure based on transparent substrate |
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