CN101118937A - Gallium nitride based LED device for illumination - Google Patents

Gallium nitride based LED device for illumination Download PDF

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CN101118937A
CN101118937A CNA2006100890742A CN200610089074A CN101118937A CN 101118937 A CN101118937 A CN 101118937A CN A2006100890742 A CNA2006100890742 A CN A2006100890742A CN 200610089074 A CN200610089074 A CN 200610089074A CN 101118937 A CN101118937 A CN 101118937A
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韩培德
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Institute of Semiconductors of CAS
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Institute of Semiconductors of CAS
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Abstract

The present invention discloses a lighting gallium nitride based LED. The present invention comprises a p type underlay(2); the outer edge of the p type underlay(2) is extended with a n type GaN based compound(4) and a p type InGaN source layer(7); the p type InGaN source layer(7) is provided with a p type transparent electrode(9); and the back surface of the n type underlay(2) is provided with a n type electrode(10). Therefore the present invention can make the electron and the compound lighting area superposition with the whole exhausting layer to enhance the lighting efficiency of the LED; the present invention can prepare pn tie in low temperature and can effectively prevent the escape of the In component; the present invention can greatly enhance the quality of the pn; and the present invention can realize the parallel connection of the two pn ties in the same container volume and enhances the power of the device by times through the folding growth of the two pn.

Description

A kind of gallium nitride based LED device for illumination
Technical field
The present invention relates to led technology field in the semiconductor device, relate in particular to a kind of gallium nitride based LED device for illumination.
Background technology
As document F.A.Ponce and D.P.Bour, Nitride-based semiconductors for blueand green light-emitting devices, Nature, 386 (1997) 351 and document ShujiNakamura, Gerhard Fasol, " The Blue Laser Diode;--GaN based light emittersand lasers ", Springer-Verlage Berlin Heidelberg, New York, (1997) described, after two more than ten years of pacing up and down, GaN base semiconductor growth for Thin Film has had development at full speed in earlier 1990s.
As document Shuji Nakamura, et.al. " Candela-class highbrightnessInGaN/AlGaN double-heterostructure blue-light-emitting diodes; Appl.Phys.Lett.64 (13): 1687-89; 1994; document Shuji Nakamura; et.al. " InGaN-based multi-quantum-well-structure laser diodes "; Jpn.J.Appl.Phys.35:L74-76,1996 and document F.Binet, et.al. " Mechanisms of recombination in GaNphotodetectors; Appl.Phys.Lett.69 (9): 1202-04; 1996 is described; along with to P-GaN; the breakthrough of InGaN research has developed the basic indigo plant/green light LED of GaN with its compound; GaN based laser diode (LD), GaN base ultraviolet detector etc.
Although the existing part industrialization of GaN base LED, but still exist a large amount of problems and the place that haves much room for improvement.
At first, because the electron density (10 of existing n type InGaN 19/ cm 3) and mobility (100cm 2/ Vs) all far above p type GaN (10 17/ cm 3And 10cm 2/ Vs), so the depletion layer of pn knot then is to be present in p type GaN one side basically, this is to being that the light-emitting diode of active layer is a contradiction with n type InGaN, it is non-radiative compound to exist a large amount of electronics-holes.Therefore, the luminous efficiency of diode is very low.
Secondly, must be at low temperature (600 ℃-900 ℃) and nitrogen (N 2) growing InGaN active layer under the atmosphere, follow-up growing p-type GaN then need be at high temperature (1050 ℃) and hydrogen (H 2) carry out in the atmosphere, this has just caused a very big temperature to switch (about 400 ℃ of temperature difference), a very big flow perturbation (ambiance switching) and a big lattice mismatch.Therefore, in diode, be difficult to form the pn heterojunction of high-quality.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of gallium nitride based LED device for illumination, to improve the luminous efficiency of diode, forms the pn heterojunction of high-quality in diode.
(2) technical scheme
For achieving the above object, technical scheme of the present invention is achieved in that
A kind of gallium nitride based LED device for illumination, this diode component comprises:
N type substrate (2);
Epitaxially grown successively n type GaN based compound (4) and p type InGaN active layer (7) on n type substrate (2);
Go up the p type transparency electrode (9) of preparation at p type InGaN active layer (7); With
N type electrode (10) in the preparation of the back side of n type substrate (2).
This diode component further comprises between described p type InGaN active layer (7) and p type transparency electrode (9): p type GaN based compound (5), this p type GaN based compound (5) is gone up according to the order of n type GaN based compound (4), p type InGaN active layer (7) and p type GaN based compound (5) epitaxial growth successively at n type substrate (2) and is formed, and at p type GaN based compound
(5) go up preparation p type transparency electrode (9).
This diode component further comprises between described p type InGaN active layer (7) and n type GaN based compound (4): n type InGaN active layer (6), this n type InGaN active layer (6) are gone up according to the order of n type GaN based compound (4), n type InGaN active layer (6), p type InGaN active layer (7) and p type GaN based compound (5) epitaxial growth successively at n type substrate (2) and are formed.
This diode component further comprises between described p type InGaN active layer (7) and n type GaN based compound (4): n type InGaN active layer (6), this n type InGaN active layer (6) are gone up according to the order of n type GaN based compound (4), n type InGaN active layer (6) and p type InGaN active layer (7) epitaxial growth successively at n type substrate (2) and are formed.
This diode component further comprises between described p type InGaN active layer (7) and p type transparency electrode (9): p type GaN based compound (5), this p type GaN based compound (5) is gone up according to the order of n type GaN based compound (4), n type InGaN active layer (6), p type InGaN active layer (7) and p type GaN based compound (5) epitaxial growth successively at n type substrate (2) and is formed, and goes up at p type GaN based compound (5) and to prepare p type transparency electrode (9).
This diode component further comprises on p type InGaN active layer (7): n type GaN based compound (4), this n type GaN based compound (4) is gone up according to n type GaN based compound (4) at n type substrate (2), the order of p type InGaN active layer (7) and n type GaN based compound (4) epitaxial growth successively forms, and the method for employing dry etching or wet etching, with the local removal of outermost n type GaN based compound (4), expose p type InGaN active layer (7), go up preparation p type electrode (13) at the p type InGaN active layer (7) that exposes, the outermost layer n type GaN based compound (4) of etching upward prepares n type transparency electrode (12) remaining not.
This diode component further comprises: connect n type transparency electrode (12) and n type electrode (10), they form the in parallel of two pn heterojunction with p type electrode (13); Heterogeneous p type InGaN active layer (7) and the formed pn heterojunction of its both sides n type GaN based compounds (4) become of described pn.
This diode component further comprises between p type InGaN active layer (7) and outermost layer n type GaN based compound (4): n type InGaN active layer (6), this n type InGaN active layer (6) is gone up according to n type GaN based compound (4) at n type substrate (2), p type InGaN active layer (7), the order of n type InGaN active layer (6) and n type GaN based compound (4) epitaxial growth successively forms, and the method for employing dry etching or wet etching, with outermost layer n type GaN based compound (4) and the local removal of time outer n type InGaN active layer (6), expose p type InGaN active layer (7).
This diode component further comprises: connect n type transparency electrode (12) and n type electrode (10), they form the in parallel of pn heterojunction and pn homojunction with p type electrode (13), heterogeneous p type InGaN active layer (7) and the formed pn heterojunction of n type GaN based compound (4) become of described pn, described pn homogeneity is become p type InGaN active layer (7) and the formed pn homojunction of n type InGaN active layer (6).
This diode component further comprises between p type InGaN active layer (7) and n type GaN based compound (4): n type InGaN active layer (6), this n type InGaN active layer (6) are gone up according to the order of n type GaN based compound (4), n type InGaN active layer (6), p type InGaN active layer (7), n type InGaN active layer (6) and n type GaN based compound (4) epitaxial growth successively at n type substrate (2) and are formed.
This diode component further comprises between p type InGaN active layer (7) and n type GaN based compound (4): n type InGaN active layer (6), this n type InGaN active layer (6) is gone up according to n type GaN based compound (4) at n type substrate (2), n type InGaN active layer (6), the order of p type InGaN active layer (7) and n type GaN based compound (4) epitaxial growth successively forms, and the method for employing dry etching or wet etching, with the local removal of n type GaN based compound (4), expose p type InGaN active layer (7), go up preparation p type electrode (13) at the p type InGaN active layer (7) that exposes, the n type GaN based compound (4) of etching upward prepares n type transparency electrode (12) remaining not.
This diode component further comprises: connect n type transparency electrode (12) and n type electrode (10), they form the in parallel of pn homojunction and pn heterojunction with p type electrode (13), described pn homogeneity is become p type InGaN active layer (7) and the formed pn homojunction of n type InGaN active layer (6), heterogeneous p type InGaN active layer (7) and the formed pn heterojunction of n type GaN based compound (4) become of described pn.
This diode component further comprises between p type InGaN active layer (7) and n type GaN based compound (4): n type InGaN active layer (6), this n type InGaN active layer (6) is gone up according to n type GaN based compound (4) at n type substrate (2), n type InGaN active layer (6), p type InGaN active layer (7), the order of n type InGaN active layer (6) and n type GaN based compound (4) epitaxial growth successively forms, and the method for employing dry etching or wet etching, with outermost layer n type GaN based compound (4) and the local removal of time outer n type InGaN active layer (6), expose p type InGaN active layer (7).
This diode component further comprises on p type InGaN active layer (7): n type InGaN active layer (6), this n type InGaN active layer (6) is gone up according to n type GaN based compound (4) at n type substrate (2), the order of p type InGaN active layer (7) and n type InGaN active layer (6) epitaxial growth successively forms, and the method for employing dry etching or wet etching, with the local removal of n type InGaN active layer (6), expose p type InGaN active layer (7), go up preparation p type electrode (13) at the p type InGaN active layer (7) that exposes, the n type InGaN active layer (6) of etching upward prepares n type transparency electrode (12) remaining not.
This diode component further comprises: connect n type transparency electrode (12) and n type electrode (10), formation pn heterojunction is in parallel with the pn homojunction, heterogeneous p type InGaN active layer (7) and the formed pn heterojunction of n type GaN based compound (4) become of described pn, described pn homogeneity is become p type InGaN active layer (7) and the formed pn homojunction of n type InGaN active layer (6).
This diode component further comprises between p type InGaN active layer (7) and n type GaN based compound (4): n type InGaN active layer (6), this n type InGaN active layer (6) are gone up according to the order of n type GaN based compound (4), n type InGaN active layer (6), p type InGaN active layer (7) and n type InGaN active layer (6) epitaxial growth successively at n type substrate (2) and are formed.
This diode component further comprises: connect n type transparency electrode (12) and n type electrode (10), they form the in parallel of two pn homojunctions with p type electrode (13), and described pn homogeneity is become p type InGaN active layer (7) and the formed pn homojunction of its both sides n type InGaN active layers (6).
This diode component further comprises on n type InGaN active layer (6): n type GaN based compound (4), this n type InGaN based compound (4) is gone up according to the order of n type GaN based compound (4), n type InGaN active layer (6), p type InGaN active layer (7), n type InGaN active layer (6) and n type GaN based compound (4) epitaxial growth successively at n type substrate (2) and is formed, and the method for employing dry etching or wet etching, with outermost layer n type GaN based compound (4) and the local removal of time outer n type InGaN active layer (6), expose p type InGaN active layer (7).
This diode component further comprises: connect n type transparency electrode (12) and n type electrode (10), they form the in parallel of two pn homojunctions with p type electrode (13), and described pn homogeneity is become p type InGaN active layer (7) and the formed pn homojunction of its both sides n type InGaN active layers (6).
Described n type substrate (2) is for comprising n type carborundum SiC, n p type gallium arensidep GaAs or n type silicon Si thrin; Described n type electrode (10) is the n type electrode of reflection-type, or is transparent n type electrode.
Described n type GaN based compound (4) is any one of n type GaN, n type AlGaN or three kinds of compounds of n type InGaN, perhaps be the combination in any of n type GaN, n type AlGaN or three kinds of compounds of n type InGaN, the energy gap of described n type GaN based compound (4) is greater than the energy gap of n type InGaN active layer (6) and p type InGaN active layer (7).
Described p type GaN based compound (5) is any one of p type GaN, p type AlGaN or three kinds of compounds of p type InGaN, perhaps be the combination in any of p type GaN, p type AlGaN or three kinds of compounds of p type InGaN, the energy gap of described p type GaN based compound (5) is greater than the energy gap of p type InGaN active layer (7) and n type InGaN active layer (6).
The photon energy that described p type InGaN active layer (7) sends is corresponding with its band gap, be Eg=hc/ λ, wherein Eg is an energy gap, h is a Planck's constant, c is the light velocity, λ is a wavelength, this p type InGaN active layer (7) contacts with n type GaN based compound (4) and forms the pn heterojunction, form the pn homojunction with n type InGaN active layer (6) contact of identical component, the energy gap of described p type InGaN active layer (7) is less than the energy gap of n type GaN based compound (4) and p type GaN based compound (5).
The photon energy that described n type InGaN active layer (6) sends is corresponding with its band gap, be Eg=hc/ λ, wherein Eg is an energy gap, h is a Planck's constant, c is the light velocity, λ is a wavelength, this n type InGaN active layer (6) contacts with p type GaN based compound (5) and forms the pn heterojunction, form the pn homojunction with p type InGaN active layer (7) contact of identical component, the energy gap of described n type InGaN active layer (6) is less than the energy gap of n type GaN based compound (4) and p type GaN based compound (5).
For the device that contains single pn knot, the preparation technology of described pn heterojunction boundary is a temperature-fall period, and the preparation technology at described pn homojunction interface is a temperature no change process;
For the device that contains two pn knots, the preparation technology who has a pn junction interface among the preparation technology of described pn junction interface at least is for lowering the temperature or not having temperature changing process.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, utilizes the present invention, pn knot electronics-hole-recombination luminous zone is overlapped substantially with whole depletion layer.Because the concentration of electronics and concentration and the mobility that mobility is far longer than hole among the p type InGaN among the n type GaN, so electronics will be far more than the hole from the diffusion of p type GaN to n type InGaN to the diffusion of p type InGaN from n type GaN, pn knot depletion layer mainly is present in p type InGaN one side, therefore selecting p type InGaN is active area, thereby make electronics-hole-recombination luminous zone consistent with depletion layer, make the luminous zone enlarge several times, improve the combined efficiency in electronics-hole, and then improved the luminous efficiency of pn knot GaN base LED device.
2, utilize the present invention, can effectively avoid the In component on the pn junction interface to escape.Grow in the intensification conversion of high temperature (1050 ℃) p type GaN growth at common low temperature (600 ℃-900 ℃) n type InGaN, be difficult to avoid the escape of In component, but in the present invention the pn knot is chosen in by n type GaN growth in the temperature-fall period of p type InGaN growth, its In component escape situation can be greatly improved, and can form the pn heterojunction of high-quality in diode.
3, utilize the present invention, can avoid the lattice mismatch on the pn junction interface.Usually the lattice mismatch of InGaN and GaN is up to 12%, therefore can draw many misfit dislocations and pass through dislocation, but select the homojunction to p type InGaN by n type InGaN in the present invention, its situation can be greatly improved, and can form pn homojunction precipitous, no misfit dislocation in diode.
4, utilize the present invention, increased the pn knot number of GaN base LED.Because present GaN base LED device is to be become by single pn structure, so its power is difficult to increase under the constant situation of chip area.And on n type substrate epitaxial growth n-p-n structure, the corresponding electrode of preparing separately, and make two pn knot in parallel then can improve GaN based light-emitting diode power exponentially under the identical chips size.
5, utilize the present invention, improved the white-light spectrum characteristic of GaN base LED.Because present GaN base LED white-light spectrum is to be formed by stacking by a narrow blue light peak and a wide fluorescent material yellow peak, so its white-light spectrum is one the curve of fluctuating to be arranged, and the blue light peak is narrow more, and this fluctuating is big more, and white-light spectrum is poor more.And constituted pn homojunction and pn heterojunction by active area with p type InGaN, and can produce the blue light peak of broad, two stacks than broad peak just can form comparatively smooth white-light spectrum, and this is very important on colorimetry.On the other hand, the blue light peak of broad is also comparatively effective to excitated fluorescent powder, thereby can improve the transformation efficiency of fluorescent material to blue photons, improves the white-light spectrum characteristic of GaN base LED.
Description of drawings
Fig. 1 is the schematic diagram of first type of gallium nitride based LED device for illumination structure provided by the invention;
Fig. 2 is the schematic diagram of second type of gallium nitride based LED device for illumination structure provided by the invention;
Fig. 3 is the schematic diagram of the third type gallium nitride based LED device for illumination structure provided by the invention;
Fig. 4 is the schematic diagram of the 4th type of gallium nitride based LED device for illumination structure provided by the invention;
Fig. 5 is the schematic diagram of the 5th type of gallium nitride based LED device for illumination structure provided by the invention;
Fig. 6 is the schematic diagram of the 6th type of gallium nitride based LED device for illumination structure provided by the invention;
Fig. 7 is the schematic diagram of the 7th type of gallium nitride based LED device for illumination structure provided by the invention;
Fig. 8 is the schematic diagram of the 8th type of gallium nitride based LED device for illumination structure provided by the invention;
Fig. 9 is the schematic diagram of the 9th type of gallium nitride based LED device for illumination structure provided by the invention;
Figure 10 is the schematic diagram of the provided by the invention ten type of gallium nitride based LED device for illumination structure.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the schematic diagram of first type of gallium nitride based LED device for illumination structure provided by the invention, and this diode component is a pn single heterojunction GaN base LED device, specifically comprises: n type substrate (2); Epitaxially grown successively n type GaN based compound (4) and p type InGaN active layer (7) on n type substrate (2); Go up the p type transparency electrode (9) of preparation at p type InGaN active layer (7); With n type electrode (10) in the preparation of the back side of n type substrate (2).
Prepare described first type of gallium nitride based LED device for illumination, be epitaxial growth n type GaN based compound (4) and p type InGaN active layer (7) successively on n type substrate (2), go up preparation large-area p type transparency electrode (9) and binding post at p type InGaN active layer (7); Prepare n type electrode (10) at the back side of n type substrate (2) then.
As shown in Figure 2, Fig. 2 is the schematic diagram of second type of gallium nitride based LED device for illumination structure provided by the invention, and this diode component is a ppn double heterojunction GaN base LED device.This diode component is the device that further comprises p type GaN based compound (5) on the basis of the described first type gallium nitride based LED device for illumination of Fig. 1, promptly further comprises p type GaN based compound (5) between the p type InGaN active layer (7) of the described first type of gallium nitride based LED device for illumination of Fig. 1 and p type transparency electrode (9).
Described p type GaN based compound (5) is to go up according to the order of n type GaN based compound (4), p type InGaN active layer (7) and p type GaN based compound (5) epitaxial growth successively at n type substrate (2) to form, and goes up at p type GaN based compound (5) and to prepare p type transparency electrode (9).
Prepare described second type of gallium nitride based LED device for illumination, be epitaxial growth n type GaN based compound (4), p type InGaN active layer (7) and p type GaN based compound (5) successively on n type substrate (2), go up preparation large-area p type transparency electrode (9) and binding post at p type GaN based compound (5); Prepare n type electrode (10) at the back side of n type substrate (2) then.
As shown in Figure 3, Fig. 3 is the schematic diagram of the third type gallium nitride based LED device for illumination structure provided by the invention, and this diode component is the pn homojunction GaN base LED device of bilateral restriction.
This diode component is the device that further comprises n type InGaN active layer (6) on the basis of the described second type of gallium nitride based LED device for illumination of Fig. 2, promptly further comprises n type InGaN active layer (6) between the p type InGaN active layer (7) of the described first type of gallium nitride based LED device for illumination of Fig. 2 and n type GaN based compound (4).Described n type InGaN active layer (6) is gone up according to the order of n type GaN based compound (4), n type InGaN active layer (6), p type InGaN active layer (7) and p type GaN based compound (5) epitaxial growth successively at n type substrate (2) and is formed, and goes up at p type GaN based compound (5) and to prepare p type transparency electrode (9).
Prepare described the third type gallium nitride based LED device for illumination, be epitaxial growth n type GaN based compound (4), n type InGaN active layer (6), p type InGaN active layer (7) and p type GaN based compound (5) successively on n type substrate (2), go up preparation p type transparency electrode (9) and binding post at p type GaN based compound (15); Prepare n type electrode (10) at the back side of n type substrate (2) then.
As shown in Figure 4, Fig. 4 is the schematic diagram of the 4th type of gallium nitride based LED device for illumination structure provided by the invention, and this diode component is the pn homojunction GaN base LED device of one-sided restriction.
This diode component is the device that further comprises n type InGaN active layer (6) on the basis of the described first type of gallium nitride based LED device for illumination of Fig. 1, promptly further comprises n type InGaN active layer (6) between the n type GaN based compound (4) of the described first type of gallium nitride based LED device for illumination of Fig. 1 and p type InGaN active layer (7).Described n type InGaN active layer (6) is gone up according to the order of n type GaN based compound (4), n type InGaN active layer (6) and p type InGaN active layer (7) epitaxial growth successively at n type substrate (2) and is formed.
Prepare described the 4th type of gallium nitride based LED device for illumination, be epitaxial growth n type GaN based compound (4), n type InGaN active layer (6) and p type InGaN active layer (7) successively on n type substrate (2), go up preparation large-area p type transparency electrode (9) and binding post at p type InGaN active layer (7); Prepare n type electrode (10) at the back side of n type substrate (2) then.
As shown in Figure 5, Fig. 5 is the schematic diagram of the 5th type of gallium nitride based LED device for illumination structure provided by the invention, and this diode component is the in parallel high-power GaN base of two a pn heterojunction LED device.This diode component is the device that further comprises n type GaN based compound (4) on the basis of the described first type of gallium nitride based LED device for illumination of Fig. 1, promptly further comprises n type GaN based compound (4) on the p type InGaN active layer (7) of the described first type of gallium nitride based LED device for illumination of Fig. 1.
Described n type GaN based compound (4) is to go up according to the order of n type GaN based compound (4), p type InGaN active layer (7) and n type GaN based compound (4) epitaxial growth successively at n type substrate (2) to form, and the method for employing dry etching or wet etching, with the local removal of outermost n type GaN based compound (4), expose p type InGaN active layer (7), go up preparation p type electrode (13) at the p type InGaN active layer (7) that exposes, the outermost layer n type GaN based compound (4) of etching upward prepares n type transparency electrode (12) remaining not.
Prepare described the third type gallium nitride based LED device for illumination, it is epitaxial growth n type GaN based compound (4) successively on n type substrate (2), p type InGaN active layer (7) and n type GaN based compound (4), and the method for employing dry etching or wet etching, with the local removal of outermost n type GaN based compound (4), expose p type InGaN active layer (7), go up preparation p type electrode (13) at the p type InGaN active layer (7) that exposes, the outermost layer n type GaN based compound (4) of etching upward prepares n type transparency electrode (12) remaining not, and binding post; Prepare n type electrode (10) at the back side of n type substrate (2) then; And connecting n type transparency electrode (12) and n type electrode (10), they form the in parallel of two pn heterojunction with p type electrode (13); Heterogeneous p type InGaN active layer (7) and the formed pn heterojunction of its both sides n type GaN based compounds (4) become of described pn.
As shown in Figure 6, Fig. 6 is the schematic diagram of the 6th type of gallium nitride based LED device for illumination structure provided by the invention, and this diode component is the high-power GaN base LED device of pn heterojunction and the parallel connection of pn homojunction.This diode component is the device that further comprises n type GaN based compound (6) on the basis of described the 5th type of gallium nitride based LED device for illumination of Fig. 5, promptly further comprises n type InGaN active layer (6) between the p type InGaN active layer (7) of described the 5th type of gallium nitride based LED device for illumination of Fig. 5 and outermost layer n type GaN based compound (4).
Described n type InGaN active layer (6) is to go up according to n type GaN based compound (4) at n type substrate (2), p type InGaN active layer (7), the order of n type InGaN active layer (6) and n type GaN based compound (4) epitaxial growth successively forms, and the method for employing dry etching or wet etching, with outermost layer n type GaN based compound (4) and the local removal of time outer n type InGaN active layer (6), expose p type InGaN active layer (7), go up preparation p type electrode (13) at the p type InGaN active layer (7) that exposes, the outermost layer n type GaN based compound (4) of etching upward prepares n type transparency electrode (12) remaining not.
Prepare described the 6th type of gallium nitride based LED device for illumination, it is epitaxial growth n type GaN based compound (4) successively on n type substrate (2), p type InGaN active layer (7), n type InGaN active layer (6) and n type GaN based compound (4), and the method for employing dry etching or wet etching, with outermost layer n type GaN based compound (4) and the local removal of time outer n type InGaN active layer (6), expose p type InGaN active layer (7), go up preparation p type electrode (13) at the p type InGaN active layer (7) that exposes, the n type GaN based compound (4) of etching upward prepares n type transparency electrode (12) remaining not, and binding post; Prepare n type electrode (10) at the back side of n type substrate (2) then; And connection n type transparency electrode (12) and n type electrode (10), they form the in parallel of pn heterojunction and pn homojunction with p type electrode (13), heterogeneous p type InGaN active layer (7) and the formed pn heterojunction of n type GaN based compound (4) become of described pn, described pn homogeneity is become p type InGaN active layer (7) and the formed pn homojunction of n type InGaN active layer (6).。
As shown in Figure 7, Fig. 7 is the schematic diagram of the 7th type of gallium nitride based LED device for illumination structure provided by the invention, and this diode component is the high-power GaN base LED device of pn homojunction and the parallel connection of pn heterojunction.This diode component is the device that further comprises n type InGaN active layer (6) on the basis of described the 5th type of gallium nitride based LED device for illumination of Fig. 5, promptly further comprises n type InGaN active layer (6) between the p type InGaN active layer (7) of described the 5th type of gallium nitride based LED device for illumination of Fig. 5 and n type GaN based compound (4).
Described n type InGaN active layer (6) is to go up according to the order of n type GaN based compound (4), n type InGaN active layer (6), p type InGaN active layer (7) and n type GaN based compound (4) epitaxial growth successively at n type substrate (2) to form, and the method for employing dry etching or wet etching, with the local removal of outermost layer n type GaN based compound (4), expose p type InGaN active layer (7), go up preparation p type electrode (13) at the p type InGaN active layer (7) that exposes, the outermost layer n type GaN based compound (4) of etching upward prepares n type transparency electrode (12) remaining not.
Prepare described the 7th type of gallium nitride based LED device for illumination, it is epitaxial growth n type GaN based compound (4) successively on n type substrate (2), n type InGaN active layer (6), p type InGaN active layer (7) and n type GaN based compound (4), and the method for employing dry etching or wet etching, with the local removal of outermost layer n type GaN based compound (4), expose p type InGaN active layer (7), go up preparation p type electrode (13) at the p type InGaN active layer (7) that exposes, the outermost layer n type GaN based compound (4) of etching upward prepares n type transparency electrode (12) remaining not, and binding post; Prepare n type electrode (10) at the back side of n type substrate (2) then; And connection n type transparency electrode (12) and n type electrode (10), they form the in parallel of pn homojunction and pn heterojunction with p type electrode (13), described pn homogeneity is become p type InGaN active layer (7) and the formed pn homojunction of n type InGaN active layer (6), heterogeneous p type InGaN active layer (7) and the formed pn heterojunction of n type GaN based compound (4) become of described pn.
As shown in Figure 8, Fig. 8 is the schematic diagram of the 8th type of gallium nitride based LED device for illumination structure provided by the invention, and this diode component is the high-power GaN base LED device of two pn homojunctions parallel connection.
This diode component is the device that further comprises n type InGaN active layer (6) on the basis of Fig. 6 or the described gallium nitride based LED device for illumination of Fig. 7.
When this diode component is when further comprising the device of n type InGaN active layer (6) on the basis of described the 6th type of gallium nitride based LED device for illumination of Fig. 6, be between the p type InGaN active layer (7) of described the 6th type of gallium nitride based LED device for illumination of Fig. 6 and n type GaN based compound (4), further to comprise n type InGaN active layer (6).
When this diode component is when further comprising the device of n type InGaN active layer (6) on the basis of described the 7th type of gallium nitride based LED device for illumination of Fig. 7, be between the p type InGaN active layer (7) of described the 7th type of gallium nitride based LED device for illumination of Fig. 7 and outermost layer n type GaN based compound (4), further to comprise n type InGaN active layer (6).
Described n type InGaN active layer (6) is gone up according to the order of n type GaN based compound (4), n type InGaN active layer (6), p type InGaN active layer (7), n type InGaN active layer (6) and n type GaN based compound (4) epitaxial growth successively at n type substrate (2) and is formed, and the method for employing dry etching or wet etching, with outermost layer n type GaN based compound (4) and the local removal of time outer n type InGaN active layer (6), expose p type InGaN active layer (7).
Prepare described the 8th type of gallium nitride based LED device for illumination, it is epitaxial growth internal layer n type GaN based compound (4) successively on n type substrate (2), n type InGaN active area (6), p type InGaN active area (7), n type InGaN active area (6) and n type GaN based compound (4), and be used in the method for method etching or wet etching, with outermost layer n type GaN based compound (4) and the local removal of time outer n type InGaN active layer (6), expose p type InGaN active layer (7), go up preparation p type electrode (13) at the p type InGaN active layer (7) that exposes, the outermost layer n type GaN based compound (4) of etching upward prepares n type transparency electrode (12) remaining not, and binding post; Prepare n type electrode (10) at the back side of n type substrate (2) then; And connect n type transparency electrode (12) and n type electrode (10), they form the in parallel of two pn homojunctions with p type electrode (13),
Described pn homogeneity is become p type InGaN active layer (7) and the formed pn homojunction of its both sides n type InGaN active layers (6).
As shown in Figure 9, Fig. 9 is the schematic diagram of the 9th type of gallium nitride based LED device for illumination structure provided by the invention, and this diode component is the high-power GaN base LED device of pn heterojunction and the parallel connection of pn homojunction.This diode component is the device that further comprises n type InGaN active layer (6) on the basis of the described first type of gallium nitride based LED device for illumination of Fig. 1, promptly further comprises n type InGaN active layer (6) on the p type InGaN active layer (7) of the described first type of gallium nitride based LED device for illumination of Fig. 1.
Described n type InGaN active layer (6) is to go up according to the order of n type GaN based compound (4), p type InGaN active layer (7) and n type InGaN active layer (6) epitaxial growth successively at n type substrate (2) to form, and the method for employing dry etching or wet etching, with the local removal of n type InGaN active layer (6), expose p type InGaN active layer (7), go up preparation p type electrode (13) at the p type InGaN active layer (7) that exposes, the n type InGaN active layer (6) of etching upward prepares n type transparency electrode (12) remaining not.
Prepare described the 9th type of gallium nitride based LED device for illumination, be epitaxial growth n type GaN based compound (4), p type InGaN active layer (7) and n type InGaN active layer (6) successively on n type substrate (2), and the method for employing dry etching or wet etching, with the local removal of n type InGaN active layer (6), expose p type InGaN active layer (7), go up preparation p type electrode (13) at the p type InGaN active layer (7) that exposes, the n type InGaN active layer (6) of etching upward prepares n type transparency electrode (12) and binding post remaining not; Prepare n type electrode (10) at the back side of n type substrate (2) then; And connection n type transparency electrode (12) and n type electrode (10), they form the in parallel of pn heterojunction and pn homojunction with p type electrode (13), heterogeneous p type InGaN active layer (7) and the formed pn heterojunction of n type GaN based compound (4) become of described pn, described pn homogeneity is become p type InGaN active layer (7) and the formed pn homojunction of n type InGaN active layer (6).
As shown in figure 10, Figure 10 is the schematic diagram of the provided by the invention ten type of gallium nitride based LED device for illumination structure, and this diode component is the high-power GaN base LED device of two pn homojunctions parallel connection.This diode component is the device that further comprises n type InGaN active layer (6) on the basis of described the 9th type of gallium nitride based LED device for illumination of Fig. 9, promptly further comprises n type InGaN active layer (6) between the p type InGaN active layer (7) of described the 9th type of gallium nitride based LED device for illumination of Fig. 9 and n type GaN based compound (4).
Described n type InGaN active layer (6) is to go up according to the order of n type GaN based compound (4), n type InGaN active layer (6), p type InGaN active layer (7) and n type InGaN active layer (6) epitaxial growth successively at n type substrate (2) to form, and the method for employing dry etching or wet etching, with the local removal of outermost layer n type InGaN active layer (6), expose p type InGaN active layer (7), go up preparation p type electrode (13) at the p type InGaN active layer (7) that exposes, the n type InGaN active layer (6) of etching upward prepares n type transparency electrode (12) remaining not.
Prepare the described ten type of gallium nitride based LED device for illumination, it is epitaxial growth n type GaN based compound (4) successively on n type substrate (2), n type InGaN active layer (6), p type InGaN active layer (7) and n type InGaN active layer (6), and the method for employing dry etching or wet etching, with the local removal of outermost layer n type InGaN active layer (6), expose p type InGaN active layer (7), go up preparation p type electrode (13) at the p type InGaN active layer (7) that exposes, the n type InGaN active layer (6) of etching upward prepares n type transparency electrode (12) remaining not, and binding post; Prepare n type electrode (10) at the back side of n type substrate (2) then; And connect n type transparency electrode (12) and n type electrode (10), and they form the in parallel of two pn homojunctions with p type electrode (13), and described pn homogeneity is become p type InGaN active layer (7) and the formed pn homojunction of its both sides n type InGaN active layers (6).
In addition, for the gallium nitride based LED device for illumination of described ten types of Fig. 1 to Figure 10, described n type substrate (2) is for comprising n type carborundum SiC, n p type gallium arensidep GaAs or n type silicon Si thrin; Described n type electrode (10) is the n type electrode of reflection-type, or is transparent n type electrode.
Described n type GaN based compound (4) is any one of n type GaN, n type AlGaN or three kinds of compounds of n type InGaN, perhaps be the combination in any of n type GaN, n type AlGaN or three kinds of compounds of n type InGaN, the energy gap of described n type GaN based compound (4) is greater than the energy gap of n type InGaN active layer (6) and p type InGaN active layer (7).
Described p type GaN based compound (5) is any one of p type GaN, p type AlGaN or three kinds of compounds of p type InGaN, perhaps be the combination in any of p type GaN, p type AlGaN or three kinds of compounds of p type InGaN, the energy gap of described p type GaN based compound (5) is greater than the energy gap of p type InGaN active layer (7) and n type InGaN active layer (6).
Described p type InGaN active layer (7) is the luminous zone, and its photon energy of sending is corresponding with its band gap, i.e. Eg=hc/ λ, and wherein Eg is that energy gap, h are that Planck's constant, c are that the light velocity, λ are wavelength.This active layer (7) contacts with n type GaN based compound (4) and forms the pn heterojunction, form the pn homojunction with n type InGaN active layer (6) contact of identical component, the energy gap of described p type InGaN active layer (7) is less than the energy gap of n type GaN based compound (4) and p type GaN based compound (5).
Described n type InGaN active layer (6) is the luminous zone, its photon energy of sending corresponding with its band gap (Eg=hc/ λ), this active layer (6) contacts with p type GaN based compound (5) and forms the pn heterojunction, form the pn homojunction with p type InGaN active layer (7) contact of identical component, the energy gap of described n type InGaN active layer (6) is less than the energy gap of n type GaN based compound (4) and p type GaN based compound (5).
The preparation technology of described pn junction interface, for the device that contains single pn knot, the preparation technology of pn heterojunction boundary is a temperature-fall period, the preparation technology at pn homojunction interface is a temperature no change process; For the device that contains two pn knot, wherein as for the preparation technology that a pn junction interface is arranged for cooling or there is not temperature changing process.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (25)

1. a gallium nitride based LED device for illumination is characterized in that, this diode component comprises:
N type substrate (2);
Epitaxially grown successively n type GaN based compound (4) and p type InGaN active layer (7) on n type substrate (2);
Go up the p type transparency electrode (9) of preparation at p type InGaN active layer (7); With
N type electrode (10) in the preparation of the back side of n type substrate (2).
2. gallium nitride based LED device for illumination according to claim 1 is characterized in that, this diode component further comprises between described p type InGaN active layer (7) and p type transparency electrode (9):
P type GaN based compound (5), this p type GaN based compound (5) is gone up according to the order of n type GaN based compound (4), p type InGaN active layer (7) and p type GaN based compound (5) epitaxial growth successively at n type substrate (2) and is formed, and goes up at p type GaN based compound (5) and to prepare p type transparency electrode (9).
3. gallium nitride based LED device for illumination according to claim 2 is characterized in that, this diode component further comprises between described p type InGaN active layer (7) and n type GaN based compound (4):
N type InGaN active layer (6), this n type InGaN active layer (6) are gone up according to the order of n type GaN based compound (4), n type InGaN active layer (6), p type InGaN active layer (7) and p type GaN based compound (5) epitaxial growth successively at n type substrate (2) and are formed.
4. gallium nitride based LED device for illumination according to claim 1 is characterized in that, this diode component further comprises between described p type InGaN active layer (7) and n type GaN based compound (4):
N type InGaN active layer (6), this n type InGaN active layer (6) are gone up according to the order of n type GaN based compound (4), n type InGaN active layer (6) and p type InGaN active layer (7) epitaxial growth successively at n type substrate (2) and are formed.
5. gallium nitride based LED device for illumination according to claim 4 is characterized in that, this diode component further comprises between described p type InGaN active layer (7) and p type transparency electrode (9):
P type GaN based compound (5), this p type GaN based compound (5) is gone up according to the order of n type GaN based compound (4), n type InGaN active layer (6), p type InGaN active layer (7) and p type GaN based compound (5) epitaxial growth successively at n type substrate (2) and is formed, and goes up at p type GaN based compound (5) and to prepare p type transparency electrode (9).
6. gallium nitride based LED device for illumination according to claim 1 is characterized in that, this diode component further comprises on p type InGaN active layer (7):
N type GaN based compound (4), this n type GaN based compound (4) is gone up according to the order of n type GaN based compound (4), p type InGaN active layer (7) and n type GaN based compound (4) epitaxial growth successively at n type substrate (2) and is formed, and the method for employing dry etching or wet etching, with the local removal of outermost n type GaN based compound (4), expose p type InGaN active layer (7), go up preparation p type electrode (13) at the p type InGaN active layer (7) that exposes, the outermost layer n type GaN based compound (4) of etching upward prepares n type transparency electrode (12) remaining not.
7. gallium nitride based LED device for illumination according to claim 6 is characterized in that, this diode component further comprises:
Connect n type transparency electrode (12) and n type electrode (10), they form the in parallel of two pn heterojunction with p type electrode (13);
Heterogeneous p type InGaN active layer (7) and the formed pn heterojunction of its both sides n type GaN based compounds (4) become of described pn.
8. gallium nitride based LED device for illumination according to claim 6 is characterized in that, this diode component further comprises between p type InGaN active layer (7) and outermost layer n type GaN based compound (4):
N type InGaN active layer (6), this n type InGaN active layer (6) is gone up according to the order of n type GaN based compound (4), p type InGaN active layer (7), n type InGaN active layer (6) and n type GaN based compound (4) epitaxial growth successively at n type substrate (2) and is formed, and the method for employing dry etching or wet etching, with outermost layer n type GaN based compound (4) and the local removal of time outer n type InGaN active layer (6), expose p type InGaN active layer (7).
9. gallium nitride based LED device for illumination according to claim 8 is characterized in that, this diode component further comprises:
Connect n type transparency electrode (12) and n type electrode (10), they are in parallel with p type electrode (13) formation pn heterojunction and pn homojunction,
Heterogeneous p type InGaN active layer (7) and the formed pn heterojunction of n type GaN based compound (4) become of described pn, described pn homogeneity is become p type InGaN active layer (7) and the formed pn homojunction of n type InGaN active layer (6).
10. gallium nitride based LED device for illumination according to claim 8 is characterized in that, this diode component further comprises between p type InGaN active layer (7) and n type GaN based compound (4):
N type InGaN active layer (6), this n type InGaN active layer (6) are gone up according to the order of n type GaN based compound (4), n type InGaN active layer (6), p type InGaN active layer (7), n type InGaN active layer (6) and n type GaN based compound (4) epitaxial growth successively at n type substrate (2) and are formed.
11. gallium nitride based LED device for illumination according to claim 6 is characterized in that, this diode component further comprises between p type InGaN active layer (7) and n type GaN based compound (4):
N type InGaN active layer (6), this n type InGaN active layer (6) is gone up according to the order of n type GaN based compound (4), n type InGaN active layer (6), p type InGaN active layer (7) and n type GaN based compound (4) epitaxial growth successively at n type substrate (2) and is formed, and the method for employing dry etching or wet etching, with the local removal of n type GaN based compound (4), expose p type InGaN active layer (7), go up preparation p type electrode (13) at the p type InGaN active layer (7) that exposes, the n type GaN based compound (4) of etching upward prepares n type transparency electrode (12) remaining not.
12. gallium nitride based LED device for illumination according to claim 11 is characterized in that, this diode component further comprises:
Connect n type transparency electrode (12) and n type electrode (10), they are in parallel with p type electrode (13) formation pn homojunction and pn heterojunction,
Described pn homogeneity is become p type InGaN active layer (7) and the formed pn homojunction of n type InGaN active layer (6), heterogeneous p type InGaN active layer (7) and the formed pn heterojunction of n type GaN based compound (4) become of described pn.
13. gallium nitride based LED device for illumination according to claim 11 is characterized in that, this diode component further comprises between p type InGaN active layer (7) and n type GaN based compound (4):
N type InGaN active layer (6), this n type InGaN active layer (6) is gone up according to the order of n type GaN based compound (4), n type InGaN active layer (6), p type InGaN active layer (7), n type InGaN active layer (6) and n type GaN based compound (4) epitaxial growth successively at n type substrate (2) and is formed, and the method for employing dry etching or wet etching, with outermost layer n type GaN based compound (4) and the local removal of time outer n type InGaN active layer (6), expose p type InGaN active layer (7).
14. gallium nitride based LED device for illumination according to claim 1 is characterized in that, this diode component further comprises on p type InGaN active layer (7):
N type InGaN active layer (6), this n type InGaN active layer (6) is gone up according to the order of n type GaN based compound (4), p type InGaN active layer (7) and n type InGaN active layer (6) epitaxial growth successively at n type substrate (2) and is formed, and the method for employing dry etching or wet etching, with the local removal of n type InGaN active layer (6), expose p type InGaN active layer (7), go up preparation p type electrode (13) at the p type InGaN active layer (7) that exposes, the n type InGaN active layer (6) of etching upward prepares n type transparency electrode (12) remaining not.
15. gallium nitride based LED device for illumination according to claim 14 is characterized in that, this diode component further comprises:
Connect n type transparency electrode (12) and n type electrode (10), formation pn heterojunction is in parallel with the pn homojunction,
Heterogeneous p type InGaN active layer (7) and the formed pn heterojunction of n type GaN based compound (4) become of described pn, described pn homogeneity is become p type InGaN active layer (7) and the formed pn homojunction of n type InGaN active layer (6).
16. gallium nitride based LED device for illumination according to claim 14 is characterized in that, this diode component further comprises between p type InGaN active layer (7) and n type GaN based compound (4):
N type InGaN active layer (6), this n type InGaN active layer (6) are gone up according to the order of n type GaN based compound (4), n type InGaN active layer (6), p type InGaN active layer (7) and n type InGaN active layer (6) epitaxial growth successively at n type substrate (2) and are formed.
17. gallium nitride based LED device for illumination according to claim 16 is characterized in that, this diode component further comprises:
Connect n type transparency electrode (12) and n type electrode (10), they form the in parallel of two pn homojunctions with p type electrode (13),
Described pn homogeneity is become p type InGaN active layer (7) and the formed pn homojunction of its both sides n type InGaN active layers (6).
18. gallium nitride based LED device for illumination according to claim 16 is characterized in that, this diode component further comprises on n type InGaN active layer (6):
N type GaN based compound (4), this n type InGaN based compound (4) is gone up according to the order of n type GaN based compound (4), n type InGaN active layer (6), p type InGaN active layer (7), n type InGaN active layer (6) and n type GaN based compound (4) epitaxial growth successively at n type substrate (2) and is formed, and the method for employing dry etching or wet etching, with outermost layer n type GaN based compound (4) and the local removal of time outer n type InGaN active layer (6), expose p type InGaN active layer (7).
19., it is characterized in that this diode component further comprises according to claim 10,13 or 18 described gallium nitride based LED device for illumination:
Connect n type transparency electrode (12) and n type electrode (10), they form the in parallel of two pn homojunctions with p type electrode (13),
Described pn homogeneity is become p type InGaN active layer (7) and the formed pn homojunction of its both sides n type InGaN active layers (6).
20. according to each described gallium nitride based LED device for illumination of claim 1 to 19, it is characterized in that,
Described n type substrate (2) is for comprising n type carborundum SiC, n p type gallium arensidep GaAs or n type silicon Si thrin;
Described n type electrode (10) is the n type electrode of reflection-type, or is transparent n type electrode.
21. according to each described gallium nitride based LED device for illumination of claim 1 to 19, it is characterized in that,
Described n type GaN based compound (4) is any one of n type GaN, n type AlGaN or three kinds of compounds of n type InGaN, perhaps be the combination in any of n type GaN, n type AlGaN or three kinds of compounds of n type InGaN, the energy gap of described n type GaN based compound (4) is greater than the energy gap of n type InGaN active layer (6) and p type InGaN active layer (7).
22. according to each described gallium nitride based LED device for illumination of claim 1 to 19, it is characterized in that,
Described p type GaN based compound (5) is any one of p type GaN, p type AlGaN or three kinds of compounds of p type InGaN, perhaps be the combination in any of p type GaN, p type AlGaN or three kinds of compounds of p type InGaN, the energy gap of described p type GaN based compound (5) is greater than the energy gap of p type InGaN active layer (7) and n type InGaN active layer (6).
23. according to each described gallium nitride based LED device for illumination of claim 1 to 19, it is characterized in that,
The photon energy that described p type InGaN active layer (7) sends is corresponding with its band gap, be Eg=hc/ λ, wherein Eg is an energy gap, h is a Planck's constant, c is the light velocity, λ is a wavelength, this p type InGaN active layer (7) contacts with n type GaN based compound (4) and forms the pn heterojunction, form the pn homojunction with n type InGaN active layer (6) contact of identical component, the energy gap of described p type InGaN active layer (7) is less than the energy gap of n type GaN based compound (4) and p type GaN based compound (5).
24. according to each described gallium nitride based LED device for illumination of claim 1 to 19, it is characterized in that,
The photon energy that described n type InGaN active layer (6) sends is corresponding with its band gap, be Eg=hc/ λ, wherein Eg is an energy gap, h is a Planck's constant, c is the light velocity, λ is a wavelength, this n type InGaN active layer (6) contacts with p type GaN based compound (5) and forms the pn heterojunction, form the pn homojunction with p type InGaN active layer (7) contact of identical component, the energy gap of described n type InGaN active layer (6) is less than the energy gap of n type GaN based compound (4) and p type GaN based compound (5).
25. according to claim 23 and 24 described gallium nitride based LED device for illumination, it is characterized in that,
For the device that contains single pn knot, the preparation technology of described pn heterojunction boundary is a temperature-fall period, and the preparation technology at described pn homojunction interface is a temperature no change process;
For the device that contains two pn knots, the preparation technology who has a pn junction interface among the preparation technology of described pn junction interface at least is for lowering the temperature or not having temperature changing process.
CNA2006100890742A 2006-08-02 2006-08-02 Gallium nitride based LED device for illumination Pending CN101118937A (en)

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CN104218137B (en) * 2013-06-05 2017-11-28 江苏豪迈照明科技有限公司 LED light substrate, LED chip COB encapsulating structures and using the structure LED
CN105070806A (en) * 2015-07-17 2015-11-18 贵州大学 LED and preparation method thereof
CN105070806B (en) * 2015-07-17 2018-01-30 贵州大学 A kind of light emitting diode and preparation method thereof
CN109671825A (en) * 2017-10-17 2019-04-23 北京天元广建科技研发有限责任公司 A kind of polar semiconductor light emitting diode

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