CN101728472A - Multilayer LED chip structure and preparation method thereof - Google Patents
Multilayer LED chip structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a multilayer LED chip structure and a preparation method thereof. The structure comprises a sapphire substrate, a GaN buffer layer formed on the sapphire substrate through low temperature epitaxial growth, a n-type GaN formed on the GaN buffer layer through high temperature epitaxial growth, an AlGaN layer formed on the n-type GaN through high temperature epitaxial growth, an InGaN/GaN quantum well relaxation layer growing on the AlGaN layer for three periods, an InGaN/GaN quantum well active area growing on the InGaN/GaN quantum well relaxation layer for seven periods, a p-type AlGaN electronic blocking layer growing on the InGaN/GaN quantum well active area, a p-type GaN layer growing on the electronic blocking layer and a heavily-doped p-type GaN contact layer growing on the p-type GaN layer. The structure can effectively reduce the dislocation density of a material in an epitaxial layer, reduces the influence of quantum-confined Stark effect, and improves the internal quantum efficiency of an LED.
Description
Technical field
The present invention relates to the solid-state illumination technical field, be meant multilayer LED chip structure of a kind of MOCVD of utilization growth and preparation method thereof especially.The led chip of extension can improve the interior quantum luminous efficiency and the light extraction efficiency of material internal effectively under this structure.
Background technology
The whole world is all consuming a large amount of energy every year, and wherein electric consumption on lighting has accounted for about 20% of total power consumption again.Fluorescent lamp and incandescent lamp are the lighting sources of present extensive use, but they have very big defective, are exactly that luminous efficient is too low, and 40% having been consumed by them of electric consumption on lighting.Incandescent lamp is to send white light by thermal-radiating mode, though very good of its color developing effect, efficient is very low but, has only 10% the electric energy can be luminous.Fluorescent lamp is better a little, but efficient is not high yet.The typical luminous efficiency of incandescent lamp and fluorescent lamp is respectively 13 to 20lm/W and 90lm/W.Finding the high new light sources of light conversion efficiency to substitute these conventional light source, is one of important channel of realizing energy-saving and emission-reduction.LED (light emitting diodes) is a kind of novel light source, and compound and luminous by electronics and hole direct radiation, luminous efficient is very high.Advantages such as that semiconductor lighting has is energy-conservation, long, energy-conservation attractive in appearance, the environmental protection of safety, life-span, Miniaturized, rich color, and high temperature high voltage resistant, acid-alkali-corrosive-resisting is even also can operate as normal under harsh condition.The approach that realizes the LED white-light illuminating mainly contains three kinds: the one, and blue-ray LED excites yellow fluorescent powder to emit white light; The 2nd, ultraviolet LED cooperates the red, green, blue three-color phosphor to emit white light; The 3rd, LED is mixed into white light by redgreenblue.Wherein first method is to realize the effective means of LED illumination present stage.
With GaN is the development of the III-IV group-III nitride of representative, has promoted the development of semiconductor solid lighting.The III-IV group-III nitride has covered from ultraviolet to far emission wavelength, and all is the direct luminescent material of band system in whole compositional range.With GaN is the III-V family wide bandgap compound semiconductors material of representative, with respect to SiC, ZnSe and the made bluish-green luminescent device of other II/VI compound semiconductor wide bandgap materials, the GaN base device life-span is long, inside and outside quantum efficiency height, the luminous efficiency height, price is relatively cheap, is acknowledged as the preferred material of all solid state lighting source with die devices.Because the fusing point and the saturated vapor pressure of GaN crystal are very high, be difficult to make the monocrystal of GaN by the method for fusion, so GaN material and device generally be on foreign substrate such as sapphire, silicon chip, carry out epitaxially grown.But very big of the lattice constant of foreign substrate such as sapphire, silicon chip and GaN and difference of thermal expansion coefficients so exist misfit dislocation on the GaN film of extension on these substrates, is unfavorable for that the performance of GaN base electronic devices and components improves.So during extension GaN film, it is extremely important that the selection of resilient coating just seems on foreign substrate such as sapphire, silicon chip.
In the heteroepitaxy development of GaN material, the work with decision meaning is to be finished by the group that Akasaki leads.1986, they used low temperature AI N resilient coating heteroepitaxy GaN film on Sapphire Substrate, and they find that the crystal mass of GaN epitaxial film has had very big improvement as a result, and background election concentration has also reduced a lot.Soon, Nakamura leader's group finds that low temperature GaN resilient coating also can greatly improve the crystal mass of GaN.
No matter be research or large-scale industrialization production, MOCVD is the capital equipment of GaN heteroepitaxy now.The production technology of main flow is such: step 1, on sapphire substrate, at the AlN of the growth of the temperature about 530 ℃ about 20 to 30nm or the resilient coating of GaN; Step 2, be raised to the high temperature more than 1000 ℃, the film of growing GaN; Step 3, the subsequent device extension of on the film of GaN, carrying out.
Though the quality of the GaN epitaxial film that this method makes is greatly improved, still can not satisfy at present requirement for high-power, high efficiency LED and LD.The GaN material of extension on Sapphire Substrate at first because the very big lattice mismatch and the difference of thermal coefficient of expansion, makes to have a large amount of dislocations in the LED structure.Secondly, the LED structure of extension on sapphire (0001) face, in luminous quantum well region, the quantum limit Stark effect that causes owing to piezoelectric polarization and spontaneous polarization effect.
So the design of high-power blue-ray LED, the dislocation density of the reduction material that will try one's best will reduce the influence of quantum limit Stark effect on the other hand as far as possible on the one hand.
Summary of the invention
(1) technical problem that will solve
Main purpose of the present invention is to provide a kind of multilayer LED chip structure and preparation method thereof, to reduce the dislocation density of material in the epitaxial loayer, reduces the influence of quantum limit Stark effect, improves the internal quantum efficiency of LED.
(2) technical scheme
For achieving the above object, the invention provides a kind of multilayer LED chip structure, this structure comprises:
Sapphire Substrate 1;
The GaN resilient coating 2 of low-temperature epitaxy growth on Sapphire Substrate 1;
The n type GaN 3 of high temperature epitaxy growth on GaN resilient coating 2;
The AlGaN layer 4 of high temperature epitaxy growth on n type GaN 3;
The relaxed layer 5 of the InGaN/GaN quantum well in 3 cycles of growth on AlGaN layer 4;
The InGaN/GaN quantum well active area 6 in 7 cycles of growth on the relaxed layer 5 of InGaN/GaN quantum well;
The p type AlGaN electronic barrier layer 7 of growth on InGaN/GaN quantum well active area 6;
The p type GaN layer 8 of growth on electronic barrier layer 7; And
The heavily doped p type GaN contact layer 9 of growth on p type GaN layer 8.
In the such scheme, the growth temperature of described GaN resilient coating 2 is 500 ℃, and the growth temperature of described n type GaN3 is 1100 ℃.
In the such scheme, the thickness of described n type GaN 3 is 2 μ m, and the thickness of described AlGaN layer 4 is 20nm, and the thickness of described p type GaN layer 8 is 200nm.
In the such scheme, the width of trap is 1nm in the relaxed layer 5 of described InGaN/GaN quantum well, and the width at base is 20nm, and the component of In is 3% among the InGaN.
In the such scheme, the width of InGaN potential well is 3nm in the described InGaN/GaN quantum well active area 6, and the width of potential barrier is 15nm, and the In component is 13% among the InGaN.
In the such scheme, al composition is 20% in the electronic barrier layer 7 of described p type AlGaN.
For achieving the above object, the present invention also provides a kind of method for preparing multilayer LED chip structure, and this method comprises:
Cleaning and nitrogen treatment are carried out in the Sapphire Substrate surface;
Epitaxial growth one deck GaN resilient coating on the Sapphire Substrate after the processing;
Elevated temperature, epitaxial growth one deck n type GaN on the GaN resilient coating;
Extension one deck AlGaN layer on n type GaN;
Reduce temperature, the relaxed layer of the InGaN/GaN quantum well in three cycles of epitaxial growth on the AlGaN layer;
The InGaN/GaN quantum well active area in 7 cycles of epitaxial growth on the relaxed layer of InGaN/GaN quantum well;
Epitaxial growth one deck p type AlGaN electronic barrier layer on InGaN/GaN quantum well active area;
Epitaxial growth one deck p type GaN layer on p type AlGaN electronic barrier layer;
The heavily doped p type of epitaxial growth one deck GaN contact layer on p type GaN layer.
In the such scheme, described to carrying out clean and nitrogen treatment comprises in the Sapphire Substrate surface: as, to use H with the high temperature of Sapphire Substrate at 1100 ℃
2Substrate surface is carried out cleaning to be handled; Temperature is reduced to 500 ℃ then, nitrogen treatment is carried out on the Sapphire Substrate surface.
In the such scheme, epitaxial growth one deck GaN resilient coating comprises on the described Sapphire Substrate after processing: under 500 ℃ of temperature, epitaxial growth one layer thickness is the GaN resilient coating of 20nm on Sapphire Substrate.
In the such scheme, described elevated temperature, epitaxial growth one deck n type GaN on the GaN resilient coating specifically comprises: temperature is elevated to 1100 ℃, and epitaxial growth one layer thickness is the n type GaN of 2 μ m on the GaN resilient coating.
In the such scheme, describedly comprise at extension one deck AlGaN layer on the n type GaN: extension one layer thickness is the AlGaN layer of 20nm on n type GaN.
In the such scheme, described reduction temperature, the relaxed layer of the InGaN/GaN quantum well in three cycles of epitaxial growth on the AlGaN layer specifically comprises: temperature is reduced to 850 ℃, and the relaxed layer of the InGaN/GaN quantum well in three cycles of growth on the AlGaN layer is used N
2As carrier gas; Wherein the width of trap is 1nm, and the width at base is 20nm, and the component of In is 3% among the InGaN.
In the such scheme, described InGaN/GaN quantum well active area in 7 cycles of epitaxial growth on the relaxed layer of InGaN/GaN quantum well comprises: the active area of epitaxial growth LED on the relaxed layer of InGaN/GaN quantum well, the active area of LED is made up of the InGaN/GaN quantum well in 7 cycles, wherein the width of InGaN potential well is 3nm, the width of potential barrier is 15nm, and wherein the In component is 13%.
In the such scheme, described on InGaN/GaN quantum well active area epitaxial growth one deck p type AlGaN electronic barrier layer comprise: temperature is elevated to 950 ℃, and epitaxial growth layer of aluminum component is 20% p type AlGaN electronic barrier layer on InGaN/GaN quantum well active area.
In the such scheme, describedly comprise at epitaxial growth one deck p type GaN layer on the p type AlGaN electronic barrier layer: epitaxial growth one layer thickness is the p type GaN layer of 200nm on p type AlGaN electronic barrier layer.
(3) beneficial effect
The invention has the advantages that, a kind of multilayer epitaxial structure that is used for high-power and high-luminance LED and preparation method thereof is provided, this structure can reduce the dislocation density in the led chip effectively, avoid the generation of crackle, improve the crystal mass and the uniformity of epitaxial material, and then can improve the luminous efficiency of led chip.Utilize the chip of this structure growth, after optimizing chip structure and epitaxy technique, luminous efficiency can reach 80 to more than the 90lm/W after the high-power LED encapsulation.
Description of drawings
Fig. 1 is the method flow diagram of preparation multilayer LED chip structure provided by the invention;
Fig. 2 is the schematic diagram of the multilayer LED chip structure for preparing of the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the method flow diagram of preparation multilayer LED chip structure provided by the invention, and this method may further comprise the steps:
Step 1: cleaning and nitrogen treatment are carried out in the Sapphire Substrate surface;
In this step, carry out clean to the Sapphire Substrate surface and nitrogen treatment specifically comprises:, use H with the high temperature of Sapphire Substrate at 1100 ℃
2Substrate surface is carried out cleaning to be handled; Temperature is reduced to 500 ℃ then, nitrogen treatment is carried out on the Sapphire Substrate surface.
Step 2: epitaxial growth one deck GaN resilient coating on the Sapphire Substrate after the processing;
In this step, under 500 ℃ of temperature, epitaxial growth one layer thickness is the GaN resilient coating of 20nm on Sapphire Substrate.
Step 3: elevated temperature, epitaxial growth one deck n type GaN on the GaN resilient coating;
In this step, temperature is elevated to 1100 ℃, epitaxial growth one layer thickness is the n type GaN of 2 μ m on the GaN resilient coating.
Step 4: extension one deck AlGaN layer on n type GaN;
In this step, extension one layer thickness is the AlGaN layer of 20nm on n type GaN.
Step 5: reduce temperature, the relaxed layer of the InGaN/GaN quantum well in three cycles of epitaxial growth on the AlGaN layer;
In this step, temperature is reduced to 850 ℃, the relaxed layer of the InGaN/GaN quantum well in three cycles of growth on the AlGaN layer is used N
2As carrier gas; Wherein the width of trap is 1nm, and the width at base is 20nm, and the component of In is 3% among the InGaN.
Step 6: the InGaN/GaN quantum well active area in 7 cycles of epitaxial growth on the relaxed layer of InGaN/GaN quantum well;
In this step, the active area of epitaxial growth LED on the relaxed layer of InGaN/GaN quantum well, the active area of LED is made up of the InGaN/GaN quantum well in 7 cycles, and wherein the width of InGaN potential well is 3nm, the width of potential barrier is 15nm, and wherein the In component is 13%.
Step 7: epitaxial growth one deck p type AlGaN electronic barrier layer on InGaN/GaN quantum well active area;
In this step, temperature is elevated to 950 ℃, epitaxial growth layer of aluminum component is 20% p type AlGaN electronic barrier layer on InGaN/GaN quantum well active area.
Step 8: epitaxial growth one deck p type GaN layer on p type AlGaN electronic barrier layer;
In this step, epitaxial growth one layer thickness is the p type GaN layer of 200nm on p type AlGaN electronic barrier layer.
Step 9: the heavily doped p type of epitaxial growth one deck GaN contact layer on p type GaN layer.
Fig. 2 shows the schematic diagram of the multilayer LED chip structure of the present invention's preparation, and this structure comprises:
Sapphire Substrate 1;
The GaN resilient coating 2 of low-temperature epitaxy growth on Sapphire Substrate 1;
The n type GaN 3 of high temperature epitaxy growth on GaN resilient coating 2;
The AlGaN layer 4 of high temperature epitaxy growth on n type GaN 3;
The relaxed layer 5 of the InGaN/GaN quantum well in 3 cycles of growth on AlGaN layer 4;
The InGaN/GaN quantum well active area 6 in 7 cycles of growth on the relaxed layer 5 of InGaN/GaN quantum well;
The p type AlGaN electronic barrier layer 7 of growth on InGaN/GaN quantum well active area 6;
The p type GaN layer 8 of growth on electronic barrier layer 7; And
The heavily doped p type GaN contact layer 9 of growth on p type GaN layer 8.
This multilayer epitaxial structure that is used for high-power and high-luminance LED provided by the invention and preparation method thereof, can reduce the dislocation density in the led chip effectively, avoid the generation of crackle, improve the crystal mass and the uniformity of epitaxial material, and then can improve the luminous efficiency of led chip.Utilize the chip of this structure growth, after optimizing chip structure and epitaxy technique, luminous efficiency can reach 80 to more than the 90lm/W after the high-power LED encapsulation.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (15)
1. a multilayer LED chip structure is characterized in that, this structure comprises:
Sapphire Substrate (1);
Go up the GaN resilient coating (2) of low-temperature epitaxy growth in Sapphire Substrate (1);
Go up the n type GaN (3) of high temperature epitaxy growth at GaN resilient coating (2);
Go up the AlGaN layer (4) of high temperature epitaxy growth at n type GaN (3);
Go up the relaxed layer (5) of the InGaN/GaN quantum well in 3 cycles of growing at AlGaN layer (4);
Go up the InGaN/GaN quantum well active area (6) in 7 cycles of growth in the relaxed layer (5) of InGaN/GaN quantum well;
Go up the p type AlGaN electronic barrier layer (7) of growth at InGaN/GaN quantum well active area (6);
Go up the p type GaN layer (8) of growth at electronic barrier layer (7); And
Go up the heavily doped p type GaN contact layer (9) of growth at p type GaN layer (8).
2. multilayer LED chip structure according to claim 1 is characterized in that, the growth temperature of described GaN resilient coating (2) is 500 ℃, and the growth temperature of described n type GaN (3) is 1100 ℃.
3. multilayer LED chip structure according to claim 1 is characterized in that, the thickness of described n type GaN (3) is 2 μ m, and the thickness of described AlGaN layer (4) is 20nm, and the thickness of described p type GaN layer (8) is 200nm.
4. multilayer LED chip structure according to claim 1 is characterized in that, the width of trap is 1nm in the relaxed layer of described InGaN/GaN quantum well (5), and the width at base is 20nm, and the component of In is 3% among the InGaN.
5. multilayer LED chip structure according to claim 1 is characterized in that, the width of InGaN gesture hydrazine is 3nm in the described InGaN/GaN quantum well active area (6), and the width of potential barrier is 15nm, and the In component is 13% among the InGaN.
6. multilayer LED chip structure according to claim 1 is characterized in that, al composition is 20% in the electronic barrier layer (7) of described p type AlGaN.
7. a method for preparing multilayer LED chip structure is characterized in that, this method comprises:
Cleaning and nitrogen treatment are carried out in the Sapphire Substrate surface;
Epitaxial growth one deck GaN resilient coating on the Sapphire Substrate after the processing;
Elevated temperature, epitaxial growth one deck n type GaN on the GaN resilient coating;
Extension one deck AlGaN layer on n type GaN;
Reduce temperature, the relaxed layer of the InGaN/GaN quantum well in three cycles of epitaxial growth on the AlGaN layer;
The InGaN/GaN quantum well active area in 7 cycles of epitaxial growth on the relaxed layer of InGaN/GaN quantum well;
Epitaxial growth one deck p type AlGaN electronic barrier layer on InGaN/GaN quantum well active area;
Epitaxial growth one deck p type GaN layer on p type AlGaN electronic barrier layer;
The heavily doped p type of epitaxial growth one deck GaN contact layer on p type GaN layer.
8. the method for preparing multilayer LED chip structure according to claim 7 is characterized in that, and is described to carrying out cleaning and nitrogen treatment comprises in the Sapphire Substrate surface:
With the high temperature of Sapphire Substrate, use H at 1100 ℃
2Substrate surface is carried out cleaning to be handled; Temperature is reduced to 500 ℃ then, nitrogen treatment is carried out on the Sapphire Substrate surface.
9. the method for preparing multilayer LED chip structure according to claim 7 is characterized in that, epitaxial growth one deck GaN resilient coating comprises on the described Sapphire Substrate after processing:
Under 500 ℃ of temperature, epitaxial growth one layer thickness is the GaN resilient coating of 20nm on Sapphire Substrate.
10. the method for preparing multilayer LED chip structure according to claim 7 is characterized in that, described elevated temperature, and epitaxial growth one deck n type GaN on the GaN resilient coating specifically comprises:
Temperature is elevated to 1100 ℃, and epitaxial growth one layer thickness is the n type GaN of 2 μ m on the GaN resilient coating.
11. the method for preparing multilayer LED chip structure according to claim 7 is characterized in that, describedly comprises at extension one deck AlGaN layer on the n type GaN: extension one layer thickness is the AlGaN layer of 20nm on n type GaN.
12. the method for preparing multilayer LED chip structure according to claim 7 is characterized in that, described reduction temperature, and the relaxed layer of the InGaN/GaN quantum well in three cycles of epitaxial growth on the AlGaN layer specifically comprises:
Temperature is reduced to 850 ℃, and the relaxed layer of the InGaN/GaN quantum well in three cycles of growth on the AlGaN layer is used N
2As carrier gas; Wherein the width of trap is 1nm, and the width at base is 20nm, and the component of In is 3% among the InGaN.
13. the method for preparing multilayer LED chip structure according to claim 7 is characterized in that, described on the relaxed layer of InGaN/GaN quantum well the InGaN/GaN quantum well active area in 7 cycles of epitaxial growth comprise:
The active area of epitaxial growth LED on the relaxed layer of InGaN/GaN quantum well, the active area of LED is made up of the InGaN/GaN quantum well in 7 cycles, and wherein the width of InGaN potential well is 3nm, and the width of potential barrier is 15nm, and wherein the In component is 13%.
14. the method for preparing multilayer LED chip structure according to claim 7 is characterized in that, described on InGaN/GaN quantum well active area epitaxial growth one deck p type AlGaN electronic barrier layer comprise:
Temperature is elevated to 950 ℃, and epitaxial growth layer of aluminum component is 20% p type AlGaN electronic barrier layer on InGaN/GaN quantum well active area.
15. the method for preparing multilayer LED chip structure according to claim 7, it is characterized in that, describedly comprise at epitaxial growth one deck p type GaN layer on the p type AlGaN electronic barrier layer: epitaxial growth one layer thickness is the p type GaN layer of 200nm on p type AlGaN electronic barrier layer.
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| CN104617194A (en) * | 2015-02-03 | 2015-05-13 | 映瑞光电科技(上海)有限公司 | Preparation method of GaN-based LED epitaxial structure |
| CN112670378A (en) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | Light emitting diode and manufacturing method thereof |
| CN113270525A (en) * | 2021-04-30 | 2021-08-17 | 广东德力光电有限公司 | Preparation method of green light epitaxial structure |
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