CN102468381A - Method for forming P-type heavy doping - Google Patents
Method for forming P-type heavy doping Download PDFInfo
- Publication number
- CN102468381A CN102468381A CN2010105545247A CN201010554524A CN102468381A CN 102468381 A CN102468381 A CN 102468381A CN 2010105545247 A CN2010105545247 A CN 2010105545247A CN 201010554524 A CN201010554524 A CN 201010554524A CN 102468381 A CN102468381 A CN 102468381A
- Authority
- CN
- China
- Prior art keywords
- type
- doping
- heavily doped
- formation
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention relates to a method for forming P-type heavy doping. The method comprises the following steps of: (1) growing a semiconductor luminescent material by an epitaxial growth way in a manufacturing step of an LED (Light Emitting Diode) luminescent crystal epitaxial wafer; (2) growing a P-type structure layer in the manufacturing step of the LED luminescent crystal epitaxial wafer; (3) stopping the manufacturing step of the LED luminescent crystal epitaxial wafer, and starting a manufacturing step of an LED chip; (4) forming the P-type heavy doping on the outer surface of the P-type structure layer by an injection or doping manner in the manufacturing step of the LED chip. The epitaxial growth is topped before epitaxial growth of the P-type heavy doping, and the epitaxial growth process is finished. The P-type heavy doping is formed by the injection or doping manner. Therefore, by changing the growth manner of the P-type heavy doping, activation efficiency of the P-type heavy doping is improved, and ohmic contact resistance of P-type GaN is reduced so that the luminous efficiency of the LED chip is improved.
Description
Technical field
The present invention relates to a kind of method of mixing, relate in particular to the heavily doped method of a kind of formation P type.
Background technology
Though the development of GaN LED is quite successful, be to use Metalorganic chemical vapor deposition (MOCVD) processing procedure to let p type doped region can't reach Ideal Characteristics.Reach solid-state illumination; The p type zone that need in epitaxial loayer (epilayer) packed structures, have the high-dopant concentration of low resistance and discontinuous doping cross-section structure, but processing procedure can produce two problems now: 1. and highly-resistant material can hinder current expansion (current spreading); 2. relatively poor ohmic contact (ohmic contacts) can increase operating voltage and hinder high drive current.
Since use magnesium to carry out p type GaN and the AlGaN that organic metal vapour deposition (MOCVD) grows up to inherent characteristic as alloy, the rearmounted thermal activation of plated film growth finishing, and these nitride (nitrides) have high resistance.These high-resistance origin causes of formation maybe surface-derived hydrogen cause (hydrogen is standard MOCVD vector gas) due to the passivation result.The rearmounted thermal activation meeting of film forming destroys Mei – hydrogen misfit thing and promotes electrical conductivity, even if the too many magnesium that mixes still can cause the deterioration of quality of materials.
But heavy doping of P type and activation efficiency thereof have very big influence to its ohmic contact, and then directly influence the luminous efficiency of led chip.Therefore, how under the prerequisite that does not increase element manufacturing cost, process complexity, effectively to improve P type heavy doping activation efficiency, become the technical problem that industry needs to be resolved hurrily.
Summary of the invention
The object of the invention is exactly the problems referred to above that exist in the prior art in order to solve, and provides a kind of formation P type heavily doped method.
The object of the invention is realized through following technical scheme:
The heavily doped method of a kind of formation P type comprises
1. step uses epitaxial growth mode growing semiconductor luminescent material in LED luminescent crystal epitaxial wafer making step;
2. step generates P type structure sheaf in LED luminescent crystal epitaxial wafer making step;
3. step stops LED luminescent crystal epitaxial wafer making step, gets into the led chip making step;
4. step in the LED making step, through injecting or doping way, constitutes the heavy doping of P type at described P type structure sheaf outer surface.
Further, the above-mentioned heavily doped method of a kind of formation P type, wherein: described injection or doping way are that low energy ion injects.
Further, the above-mentioned heavily doped method of a kind of formation P type, wherein: described injection or doping way are that plasma immersion mixes.
Further, the above-mentioned heavily doped method of a kind of formation P type, wherein: described injection or doping way immerse laser doping for projection-type gas.
Further, the above-mentioned heavily doped method of a kind of formation P type, wherein: described injection or doping way are for mixing for quick vapour phase.
Again further, the above-mentioned heavily doped method of a kind of formation P type, wherein: described injection or doping way are that ion shower mixes.
Further, the above-mentioned heavily doped method of a kind of formation P type, wherein: described P type structure sheaf is a kind of among P type GaN, P type GaAs, P type GaN, the InGaN.
The advantage of technical scheme of the present invention is mainly reflected in: through changing the heavily doped growth pattern of P type, improve the heavily doped activation efficiency of P type, reduce the ohmic contact resistance of P type GaN, thereby improve the luminous efficiency of led chip.And the present invention does when doing chip, carries out under the low temperature, and chemical is better.
Description of drawings
The object of the invention, advantage and characteristics will illustrate through the non-limitative illustration of following preferred embodiment and explain.These embodiment only are the prominent examples of using technical scheme of the present invention, and all technical schemes of taking to be equal to replacement or equivalent transformation and forming all drop within the scope of requirement protection of the present invention.In the middle of these accompanying drawings,
Fig. 1 is the enforcement sketch map of the heavily doped method of this formation P type.
The implication of each Reference numeral is following among the figure:
| 1 | Sapphire | 2 | |
| 3 | The one P type GaN layer | 4 | N |
| 5 | Multi layer quantum well | 6 | The aluminium gallium |
| 7 | The 2nd P type GaN layer |
Embodiment
The heavily doped method of a kind of formation P type that " embodiment one " is as shown in Figure 1, its unusual part is may further comprise the steps: at first, choose sapphire layer 1 as basic unit, and in basic unit, generate resilient coating 2.Afterwards, on resilient coating 2, carry out the deposition of P type GaN, form a P type GaN layer 3.Immediately, on a P type GaN layer 3, carry out the deposition of N type GaN, form N type GaN layer 4.
Then, on N type GaN layer 4, carry out multi layer quantum well 5 deposition distribution, constitute multi layer quantum well 5 sedimentary deposits.Specifically, multi layer quantum well 5 deposited layers are 6 layers.
And, on multi layer quantum well 5 sedimentary deposits, deposit aluminium gallium nitride alloy, constitute aluminium gallium nitride alloy layer 6.Subsequently, on aluminium gallium nitride alloy layer 6, deposit P type GaN once more, form the 2nd P type GaN layer 7.And then, before the heavy doping of epitaxial growth P type, stop epitaxial growth, accomplish epitaxial process.
At last, through the low energy ion injection mode, constitute the heavy doping of P type.
" embodiment two "
The heavily doped method of a kind of formation P type, its unusual part is may further comprise the steps: at first, choose sapphire layer as basic unit, and in basic unit, generate resilient coating.Afterwards, on resilient coating, carry out the deposition of P type GaN, form a P type GaN layer.Immediately, on a P type GaN layer, carry out the deposition of N type GaN, form N type GaN layer.
Then, on N type GaN layer, carry out the multi layer quantum well deposition distribution, constitute the multi layer quantum well sedimentary deposit.Specifically, the multi layer quantum well deposited layers is 8 layers.
And, on the multi layer quantum well sedimentary deposit, deposit aluminium gallium nitride alloy, constitute the aluminium gallium nitride alloy layer.Subsequently, on the aluminium gallium nitride alloy layer, deposit P type GaN once more, form the 2nd P type GaN layer.And then, before the heavy doping of epitaxial growth P type, stop epitaxial growth, accomplish epitaxial process.
At last, through the plasma immersion doping way, constitute the heavy doping of P type.
" embodiment three "
The heavily doped method of a kind of formation P type, its unusual part is may further comprise the steps: at first, choose sapphire layer as basic unit, and in basic unit, generate resilient coating.Afterwards, on resilient coating, carry out the deposition of P type GaN, form a P type GaN layer.Immediately, on a P type GaN layer, carry out the deposition of N type GaN, form N type GaN layer.
Then, on N type GaN layer, carry out the multi layer quantum well deposition distribution, constitute the multi layer quantum well sedimentary deposit.Specifically, the multi layer quantum well deposited layers is 2 layers.
And, on the multi layer quantum well sedimentary deposit, deposit aluminium gallium nitride alloy, constitute the aluminium gallium nitride alloy layer.Subsequently, on the aluminium gallium nitride alloy layer, deposit P type GaN once more, form the 2nd P type GaN layer.And then, before the heavy doping of epitaxial growth P type, stop epitaxial growth, accomplish epitaxial process.
At last, immerse the laser doping mode, constitute the heavy doping of P type through projection-type gas.Moreover the doping way of above-mentioned employing can or be that ion shower mixes for quick vapour phase doping also.
Through above-mentioned character express and combine accompanying drawing to find out, adopt the present invention after, through changing the heavily doped growth pattern of P type, improve the heavily doped activation efficiency of P type, reduce the ohmic contact resistance of P type GaN, thereby improve the luminous efficiency of led chip.And the present invention does when doing chip, carries out under the low temperature, and chemical is better.
Claims (7)
1. one kind forms the heavily doped method of P type, it is characterized in that may further comprise the steps:
1. step uses epitaxial growth mode growing semiconductor luminescent material in LED luminescent crystal epitaxial wafer making step;
2. step generates P type structure sheaf in LED luminescent crystal epitaxial wafer making step;
3. step stops LED luminescent crystal epitaxial wafer making step, gets into the led chip making step;
4. step in the LED making step, through injecting or doping way, constitutes the heavy doping of P type at described P type structure sheaf outer surface.
2. the heavily doped method of a kind of formation P type according to claim 1 is characterized in that: described injection or doping way are that low energy ion injects.
3. the heavily doped method of a kind of formation P type according to claim 1 is characterized in that: described injection or doping way are that plasma immersion mixes.
4. the heavily doped method of a kind of formation P type according to claim 1 is characterized in that: described injection or doping way immerse laser doping for projection-type gas.
5. the heavily doped method of a kind of formation P type according to claim 1 is characterized in that: described injection or doping way are for mixing for quick vapour phase.
6. the heavily doped method of a kind of formation P type according to claim 1 is characterized in that: described injection or doping way are that ion shower mixes.
7. according to the heavily doped method of each described a kind of formation P type in the claim 1 to 6, it is characterized in that: described P type structure sheaf is a kind of among P type GaN, P type GaAs, P type GaN, the InGaN.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105545247A CN102468381A (en) | 2010-11-23 | 2010-11-23 | Method for forming P-type heavy doping |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105545247A CN102468381A (en) | 2010-11-23 | 2010-11-23 | Method for forming P-type heavy doping |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102468381A true CN102468381A (en) | 2012-05-23 |
Family
ID=46071764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105545247A Pending CN102468381A (en) | 2010-11-23 | 2010-11-23 | Method for forming P-type heavy doping |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102468381A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103077964A (en) * | 2013-01-18 | 2013-05-01 | 中国科学院半导体研究所 | Material structure for improving ohmic contact of p-GaN film and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1691294A (en) * | 2004-04-28 | 2005-11-02 | 国际商业机器公司 | Backgated finfet having diferent oxide thicknesses |
| CN1716542A (en) * | 2004-04-16 | 2006-01-04 | 台湾积体电路制造股份有限公司 | Method for forming gate electrode on multiple gate transistor of semicoductor device |
| CN101183642A (en) * | 2007-12-10 | 2008-05-21 | 厦门大学 | Method of producing p-GaN low-resistance Ohm contact |
| CN101728472A (en) * | 2009-12-02 | 2010-06-09 | 中国科学院半导体研究所 | Multilayer LED chip structure and preparation method thereof |
-
2010
- 2010-11-23 CN CN2010105545247A patent/CN102468381A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1716542A (en) * | 2004-04-16 | 2006-01-04 | 台湾积体电路制造股份有限公司 | Method for forming gate electrode on multiple gate transistor of semicoductor device |
| CN1691294A (en) * | 2004-04-28 | 2005-11-02 | 国际商业机器公司 | Backgated finfet having diferent oxide thicknesses |
| CN101183642A (en) * | 2007-12-10 | 2008-05-21 | 厦门大学 | Method of producing p-GaN low-resistance Ohm contact |
| CN101728472A (en) * | 2009-12-02 | 2010-06-09 | 中国科学院半导体研究所 | Multilayer LED chip structure and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| DONALD G.KENT Ⅲ: "《CO-IMPLANTATION AND DRY-ETCH DAMAGE RECOVERY BY PLASMA NITRIDATION IN GaN》", 《A THESIS PRESENTED TO THE GRADUATE SCHOOL OF THE UNIVERSITY OF FLORIDA IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF MASTER OF SCIENCE》, 31 December 2001 (2001-12-31) * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103077964A (en) * | 2013-01-18 | 2013-05-01 | 中国科学院半导体研究所 | Material structure for improving ohmic contact of p-GaN film and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101626058B (en) | Group III nitride based semiconductor light emitting element and epitaxial wafer | |
| CN101656287B (en) | Light-emitting diode divice and method thereof | |
| CN102097560A (en) | Nitride light emitting diode having composite double current spreading layer | |
| KR101294518B1 (en) | Nitride semiconductor light-emitting device and manufacturing method thereof | |
| CN109411579B (en) | Semiconductor device with graphene structure and preparation method thereof | |
| US20150236194A1 (en) | Method of manufacturing microarray type nitride light emitting device | |
| CN106030834A (en) | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip | |
| CN104272477A (en) | Nitride semiconductor light emitting element | |
| Huang et al. | Lateral current spreading effect on the efficiency droop in GaN based light-emitting diodes | |
| KR20110070382A (en) | Light emitting device and method for fabricating the same | |
| JP5568009B2 (en) | Semiconductor light emitting device and manufacturing method thereof | |
| KR20100076297A (en) | Semiconductor light emitting device and fabrication method thereof | |
| US8932943B2 (en) | Nitride semiconductor light emitting device and method of manufacturing the same | |
| CN103730555A (en) | Nitride semiconductor light-emitting device | |
| CN102468381A (en) | Method for forming P-type heavy doping | |
| KR101761310B1 (en) | Light emitting device and method of manufacturing the same | |
| CN106653959B (en) | A kind of preparation method of LED epitaxial wafer | |
| US10665755B2 (en) | Method for manufacturing light emitting device | |
| CN106601878B (en) | A kind of LED preparation method with high photosynthetic efficiency | |
| CN106601879B (en) | A kind of preparation method of the gallium nitride-based semiconductor for LED | |
| KR20140074516A (en) | Method of grawing gallium nitride based semiconductor layers and method of fabricating light emitting device therewith | |
| KR101442809B1 (en) | Nitride semiconductor light emitting device and method for manufacturing thereof | |
| KR20110081650A (en) | Light emitting device and method of manufacturing the same | |
| US10672948B2 (en) | Methods for producing light extraction structures for semiconductor devices | |
| KR20120041439A (en) | Nitride semiconductor device and method for manufacturing thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: HDK (NANTONG) OPTOELECTRONIC TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SUN ZHIJIANG Effective date: 20150225 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 200010 HUANGPU, SHANGHAI TO: 226500 NANTONG, JIANGSU PROVINCE |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20150225 Address after: Taoyuan Town Yuhua village in Rugao City, Jiangsu province 226500 Nantong City 34 photoelectric science and Technology Industrial Park No. 8 Applicant after: HAIDIKE (NANTONG) PHOTOELECTRIC SCIENCE & TECHNOLOGY CO., LTD. Address before: 200010 200 lane, South Zhongshan Road, Shanghai, Huangpu District 8-501 Applicant before: Sun Zhijiang |
|
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120523 |