CN110085619A - A kind of vertical high voltage light-emitting diode chip for backlight unit and preparation method thereof - Google Patents
A kind of vertical high voltage light-emitting diode chip for backlight unit and preparation method thereof Download PDFInfo
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- CN110085619A CN110085619A CN201910360845.4A CN201910360845A CN110085619A CN 110085619 A CN110085619 A CN 110085619A CN 201910360845 A CN201910360845 A CN 201910360845A CN 110085619 A CN110085619 A CN 110085619A
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- 238000002360 preparation method Methods 0.000 title abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims description 65
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- 238000004519 manufacturing process Methods 0.000 claims description 15
- 238000009826 distribution Methods 0.000 abstract description 12
- 239000010410 layer Substances 0.000 description 150
- 238000000034 method Methods 0.000 description 15
- 230000005611 electricity Effects 0.000 description 5
- 239000011324 bead Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 241001465382 Physalis alkekengi Species 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2933/0016—Processes relating to electrodes
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Abstract
The invention discloses a kind of vertical high voltage light-emitting diode chip for backlight unit and preparation method thereof, wherein.Pass through the design of vertical high voltage light-emitting diode chip for backlight unit, rear electrode at first chip region is electrically connected by aperture and bonded layer with electrically-conductive backing plate, and then without performing etching and its exposed rear electrode in the first chip region, guarantee that the efficient lighting area of vertical high voltage light-emitting diode chip for backlight unit is larger；And first the rear electrode of chip region do not need routing, save cost, improve reliability；In addition, each chip region current expansion is all vertical direction, and first chip region rear electrode and the chip region N front electrode formed vertical structure so that the current expansion of vertical high voltage light-emitting diode chip for backlight unit is preferable, and then can be avoided electric current congestion and improve electric current tolerance；In addition, the light type of vertical high voltage light-emitting diode chip for backlight unit is preferable, meets lambertian distribution and be easier to light distribution.
Description
Technical field
The present invention relates to LED technology fields, more specifically, are related to a kind of vertical high voltage light emitting diode
Chip and preparation method thereof.
Background technique
Light emitting diode (English: Light Emitting Diode, referred to as: LED) as great shadow in photoelectronic industry
The new product of power is rung, there are the spies such as small in size, long service life, various colors are colorful, low energy consumption, energy conservation and environmental protection, safety height
Point becomes the leap again after mankind's illumination Shi Shangji incandescent lamp, fluorescent lamp, is just driving the industries such as traditional lighting, display
Upgrading, be widely used in the fields such as illumination, display screen, signal lamp, backlight, toy.
Conventional light emitting diodes generally work under d.c. current, and single LED chip voltage is generally between 2-4V.In reality
In the application of border, especially in high power light source, generally realized by the way of series-parallel, such as a lamp bead in encapsulation process
It is series-parallel using plurality of LEDs chip, or an illuminating module is series-parallel using more lamp beads in lamps and lanterns assembling process.But
These modes increase volume, process and cost.In order to solve these problems, general to use in the concatenated design of chip-scale, this
Kind design can effectively reduce encapsulation volume and process.But the concatenated design of current chip grade is mostly for production technique electricity
The light-emitting diode chip for backlight unit of pole structure, under the conditions of the light-emitting diode chip for backlight unit of identical size, the light emitting diode of horizontal structure
The efficient lighting area of chip is smaller.
Summary of the invention
In view of this, effectively being solved the present invention provides a kind of vertical high voltage light-emitting diode chip for backlight unit and preparation method thereof
Problem of the existing technology, by the design of vertical high voltage light-emitting diode chip for backlight unit, by the rear electrode at the first chip region
It is electrically connected by aperture and bonded layer with electrically-conductive backing plate, and then without being performed etching in the first chip region and its exposed back side is electric
Pole guarantees that the efficient lighting area of vertical high voltage light-emitting diode chip for backlight unit is larger；And first the rear electrode of chip region be not required to
Routing is wanted, cost is saved, improves reliability；In addition, each chip region current expansion is all vertical direction, and the first chip
The rear electrode in area and the front electrode of the chip region N form vertical structure, so that the electricity of vertical high voltage light-emitting diode chip for backlight unit
Stream extension preferably, and then can be avoided electric current congestion and improve electric current tolerance；In addition, vertical high voltage light-emitting diode chip for backlight unit
Light type it is preferable, meet lambertian distribution and be easier to light distribution.
To achieve the above object, technical solution provided by the invention is as follows:
A kind of production method of vertical high voltage light-emitting diode chip for backlight unit, comprising:
A substrate and epitaxial structure are provided, the epitaxial structure includes being sequentially overlapped in the first kind on the substrate
Semiconductor layer, active area and Second Type semiconductor layer；
Rear electrode is formed away from the one side of substrate in the Second Type semiconductor；
Second insulating layer is formed away from the one side of substrate in the rear electrode；
At least one aperture is formed on the second insulating layer；
Deposit a bonded layer away from the one side of substrate in the second insulating layer, the bonded layer by the aperture and
The rear electrode contact；
An electrically-conductive backing plate is bonded away from the one side of substrate in the bonded layer；
Remove the substrate；
The first chip region to the chip region N, arbitrary neighborhood chip region are isolated from first kind semiconductor layer etching
Between region expose the second insulating layer, and the second chip region to the chip region N all has exposed respective respective back surfaces electricity
The interconnecting piece of pole, wherein the aperture is located at first chip region, and N is the integer not less than 2；
The first insulating layer is deposited away from the electrically-conductive backing plate side in the epitaxial structure, first insulating layer covers institute
State the exposed surface that epitaxial structure deviates from the electrically-conductive backing plate side；
The first cutout openings to N cutout openings and second are formed on the first insulating layer connects aperture to N company
Aperture is connect, the i-th cutout openings are located at the first kind semiconductor of the i-th chip region and jth connection aperture is located at jth chip region
Interconnecting piece at, i is positive integer no more than N, and j is not less than 2 and to be not more than the positive integer of N；
First insulating layer away from the electrically-conductive backing plate side formed the first connection electrode to N-1 connection electrode and
Front electrode, wherein kth connection electrode connect the first kind of aperture Yu kth chip region by kth cutout openings with kth+1
The rear electrode of+1 chip region of conductive layer and kth contacts and the front electrode passes through the N cutout openings and described the
The first kind conductive layer contact of the chip region N, k are the positive integer no more than N-1.
Optionally, unintentional doping semiconductor layer is also formed between the substrate and the epitaxial structure, wherein removal
After the substrate, and etching isolate first chip region to the chip region N before, further includes:
Remove the unintentional doping semiconductor layer.
Optionally, the first chip region to the chip region N, arbitrary neighborhood are isolated from first kind semiconductor layer etching
Region exposes the second insulating layer between chip region, and the second chip region to the chip region N all has the exposed back side
The interconnecting piece of electrode, comprising:
The first chip region to the chip region N, arbitrary neighborhood chip region are isolated from first kind semiconductor layer etching
Between region expose the second insulating layer；
Using step etching technics, second chip region to the chip region the N is etched to be formed with exposed respective
The interconnecting piece of respective back surfaces electrode.
Optionally, the connecting portion of the jth chip region is in the jth chip region close to the side of -1 chip region of jth
At side.
Optionally, first insulating layer also covers the side of the epitaxial structure.
Correspondingly, the present invention also provides a kind of vertical high voltage light-emitting diode chip for backlight unit, comprising:
Electrically-conductive backing plate；
Bonded layer on the electrically-conductive backing plate；
Deviate from the second insulating layer of the electrically-conductive backing plate side positioned at the bonded layer, is formed in the second insulating layer
At least one aperture；
Deviate from the rear electrode of the electrically-conductive backing plate side positioned at the second insulating layer, the rear electrode passes through described
Aperture is contacted with the bonded layer；
Deviate from the epitaxial structure of the electrically-conductive backing plate side positioned at the rear electrode, the epitaxial structure is divided into first
Chip region to the chip region N, region exposes the second insulating layer between arbitrary neighborhood chip region, and the second chip region is to
The chip region N all has the interconnecting piece of exposed respective respective back surfaces electrode, wherein the aperture is located at first chip region, and N is
Integer not less than 2；
The epitaxial structure is covered away from the first insulating layer of the exposed surface of the electrically-conductive backing plate side, wherein described the
It is formed with the first cutout openings to N cutout openings and second on one insulating layer and connects aperture to N connection aperture, the i-th hollow out
Aperture is located at the first kind semiconductor of the i-th chip region and jth connection aperture is located at the interconnecting piece of jth chip region, and i is
Positive integer no more than N, j are the positive integer not less than 2 and no more than N；
And positioned at the first insulating layer away from the electrically-conductive backing plate side the first connection electrode to N-1 connection electrode
And front electrode, wherein kth connection electrode connect the first kind of aperture Yu kth chip region by kth cutout openings with kth+1
The rear electrode of+1 chip region of type conductive layer and kth contact and the front electrode by the N cutout openings with it is described
The first kind conductive layer contact of the chip region N, k are the positive integer no more than N-1.
Optionally, the connecting portion of the jth chip region is in the jth chip region close to the side of -1 chip region of jth
At side.
Optionally, first insulating layer also covers the side of the epitaxial structure.
Optionally, the electrically-conductive backing plate is conductive radiator substrate.
Optionally, the first kind semiconductor layer is n type semiconductor layer, and the Second Type semiconductor layer is p-type
Semiconductor layer.
Compared to the prior art, technical solution provided by the invention has at least the following advantages:
The present invention provides a kind of vertical high voltage light-emitting diode chip for backlight unit and preparation method thereof, wherein.Pass through vertical high voltage
Rear electrode at first chip region is electrically connected by aperture and bonded layer with electrically-conductive backing plate by the design of light-emitting diode chip for backlight unit
It connects, and then without performing etching and its exposed rear electrode in the first chip region, guarantees vertical high voltage light-emitting diode chip for backlight unit
Efficient lighting area is larger；And first the rear electrode of chip region do not need routing, save cost, improve reliability；
In addition, each chip region current expansion is all vertical direction, and the front of the rear electrode of the first chip region and the chip region N is electric
Pole forms vertical structure, so that the current expansion of vertical high voltage light-emitting diode chip for backlight unit is preferable, and then can be avoided electric current congestion
And improve electric current tolerance；In addition, the light type of vertical high voltage light-emitting diode chip for backlight unit is preferable, meets lambertian distribution and be easier to
Light distribution.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of flow chart of the production method of vertical high voltage light-emitting diode chip for backlight unit provided by the embodiments of the present application；
Fig. 2 is the process of the production method of another vertical high voltage light-emitting diode chip for backlight unit provided by the embodiments of the present application
Figure.
Fig. 3 to Figure 13 is each corresponding structural schematic diagram of step in Fig. 2.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As described in background, conventional light emitting diodes generally work under d.c. current, and single LED chip voltage is general
Between 2-4V.In practical applications, it especially in high power light source, is generally realized, for example sealed by the way of series-parallel
A lamp bead is series-parallel using plurality of LEDs chip during dress, or an illuminating module use is more in lamps and lanterns assembling process
Lamp bead is series-parallel.But these modes increase volume, process and cost.In order to solve these problems, general using in core
The concatenated design of chip level, this design can effectively reduce encapsulation volume and process.But the concatenated design of current chip grade is big
It is all used for the light-emitting diode chip for backlight unit of production technique electrode structure, it is horizontal under the conditions of the light-emitting diode chip for backlight unit of identical size
The efficient lighting area of the light-emitting diode chip for backlight unit of structure is smaller.
Based on this, the embodiment of the present application provides a kind of vertical high voltage light-emitting diode chip for backlight unit and preparation method thereof, effectively
Solve the problems, such as it is of the existing technology, by the design of vertical high voltage light-emitting diode chip for backlight unit, by the back side at the first chip region
Electrode is electrically connected by aperture and bonded layer with electrically-conductive backing plate, and then without performing etching and its exposed back side in the first chip region
Electrode guarantees that the efficient lighting area of vertical high voltage light-emitting diode chip for backlight unit is larger；And first chip region rear electrode not
Routing is needed, cost is saved, improves reliability；In addition, each chip region current expansion is all vertical direction, and the first core
The rear electrode of section and the front electrode of the chip region N form vertical structure, so that vertical high voltage light-emitting diode chip for backlight unit
Current expansion is preferable, and then can be avoided electric current congestion and improve electric current tolerance；In addition, vertical high voltage light-emitting diodes tube core
The light type of piece is preferable, meets lambertian distribution and is easier to light distribution.To achieve the above object, technical side provided by the embodiments of the present application
Case is as follows, specifically combines Fig. 1 to Figure 13 that technical solution provided by the embodiments of the present application is described in detail.
Refering to what is shown in Fig. 1, being a kind of production method of vertical high voltage light-emitting diode chip for backlight unit provided by the embodiments of the present application
Flow chart, wherein production method includes:
S1, one substrate of offer and epitaxial structure, the epitaxial structure include being sequentially overlapped in first on the substrate
Type semiconductor layer, active area and Second Type semiconductor layer；
S2, rear electrode is formed away from the one side of substrate in the Second Type semiconductor；
S3, second insulating layer is formed away from the one side of substrate in the rear electrode；
S4, at least one aperture is formed on the second insulating layer；
S5, a bonded layer is deposited away from the one side of substrate in the second insulating layer, the bonded layer is opened by described
Hole is contacted with the rear electrode；
S6, an electrically-conductive backing plate is bonded away from the one side of substrate in the bonded layer；
S7, the removal substrate；
S8, the first chip region to the chip region N, arbitrary neighborhood chip are isolated from first kind semiconductor layer etching
Region exposes the second insulating layer between area, and the second chip region to the chip region N all has exposed respective respective back surfaces
The interconnecting piece of electrode, wherein the aperture is located at first chip region, and N is the integer not less than 2；
S9, the first insulating layer is deposited away from the electrically-conductive backing plate side in the epitaxial structure, first insulating layer covers
Cover the exposed surface that the epitaxial structure deviates from the electrically-conductive backing plate side；
S10, the first cutout openings are formed on the first insulating layer to N cutout openings and the second connection aperture to the
N connection aperture, the i-th cutout openings are located at the first kind semiconductor of the i-th chip region and jth connection aperture is located at jth chip
At the interconnecting piece in area, i is the positive integer no more than N, and j is the positive integer not less than 2 and no more than N；
S11, the first connection electrode is formed to N-1 connection away from the electrically-conductive backing plate side in first insulating layer
Electrode and front electrode, wherein kth connection electrode connect the of aperture and kth chip region with kth+1 by kth cutout openings
The rear electrode of+1 chip region of one type conductive layer and kth contact and the front electrode by the N cutout openings with
The first kind conductive layer contact of the chip region the N, k are the positive integer no more than N-1.
It should be understood that technical solution provided by the embodiments of the present application, passes through setting for vertical high voltage light-emitting diode chip for backlight unit
Rear electrode at first chip region is electrically connected by aperture and bonded layer with electrically-conductive backing plate by meter, and then without in the first core
Section performs etching and its exposed rear electrode, guarantees that the efficient lighting area of vertical high voltage light-emitting diode chip for backlight unit is larger；
And the rear electrode of the first chip region provided by the embodiments of the present application does not need routing, saves cost, improves
Reliability；In addition, each chip region current expansion is all vertical direction, and the rear electrode of the first chip region and N chip
The front electrode in area forms vertical structure, so that the current expansion of vertical high voltage light-emitting diode chip for backlight unit is preferable, and then can keep away
Exempt from electric current congestion and improves electric current tolerance；
In addition, the light type of vertical high voltage light-emitting diode chip for backlight unit provided by the embodiments of the present application is preferable, meet lambertian distribution
And it is easier to light distribution.
Further, can also grow between substrate and epitaxial structure provided by the embodiments of the present application has unintentional doping half
Conductor layer, and then can be improved the quality of growth epitaxial structure；It is also formed between the substrate and the epitaxial structure non-
When intentional doping semiconductor layer, wherein after removing the substrate, and etching isolates first chip region to the chip region N
Before, further includes:
Remove the unintentional doping semiconductor layer.
With specific reference to the production side for shown in Fig. 2, being another vertical high voltage light emitting diode provided by the embodiments of the present application
The flow chart of method, wherein production method includes:
S1, one substrate of offer and epitaxial structure, the epitaxial structure include being sequentially overlapped in first on the substrate
Type semiconductor layer, active area and Second Type semiconductor layer are also formed with non-event between the substrate and the epitaxial structure
Meaning doping semiconductor layer；
S2, rear electrode is formed away from the one side of substrate in the Second Type semiconductor；
S3, second insulating layer is formed away from the one side of substrate in the rear electrode；
S4, at least one aperture is formed on the second insulating layer；
S5, a bonded layer is deposited away from the one side of substrate in the second insulating layer, the bonded layer is opened by described
Hole is contacted with the rear electrode；
S6, an electrically-conductive backing plate is bonded away from the one side of substrate in the bonded layer；
After S7, the removal substrate, the unintentional doping semiconductor layer is removed；
S8, the first chip region to the chip region N, arbitrary neighborhood chip are isolated from first kind semiconductor layer etching
Region exposes the second insulating layer between area, and the second chip region to the chip region N all has exposed respective respective back surfaces
The interconnecting piece of electrode, wherein the aperture is located at first chip region, and N is the integer not less than 2；
S9, the first insulating layer is deposited away from the electrically-conductive backing plate side in the epitaxial structure, first insulating layer covers
Cover the exposed surface that the epitaxial structure deviates from the electrically-conductive backing plate side；
S10, the first cutout openings are formed on the first insulating layer to N cutout openings and the second connection aperture to the
N connection aperture, the i-th cutout openings are located at the first kind semiconductor of the i-th chip region and jth connection aperture is located at jth chip
At the interconnecting piece in area, i is the positive integer no more than N, and j is the positive integer not less than 2 and no more than N；
S11, the first connection electrode is formed to N-1 connection away from the electrically-conductive backing plate side in first insulating layer
Electrode and front electrode, wherein kth connection electrode connect the of aperture and kth chip region with kth+1 by kth cutout openings
The rear electrode of+1 chip region of one type conductive layer and kth contact and the front electrode by the N cutout openings with
The first kind conductive layer contact of the chip region the N, k are the positive integer no more than N-1.
Production method provided by the embodiments of the present application is described in more detail in conjunction with Fig. 3 to Figure 13, wherein Fig. 3 is extremely
Figure 13 is each corresponding structural schematic diagram of step in Fig. 2.It is illustrated so that N is 2 as an example it should be noted that being illustrated below.
As shown in figure 3, corresponding step S1, provides a substrate 10 and epitaxial structure, the epitaxial structure includes being sequentially overlapped
In first kind semiconductor layer 110, active area 120 and Second Type semiconductor layer 130 on the substrate, the substrate 10
Unintentional doping semiconductor layer 20 is also formed between the epitaxial structure.
It should be understood that the embodiment of the present application after providing substrate, successively grows light-emitting semiconducting material layer on substrate,
Grow the epitaxial structure of first kind type semiconductor layer, active layer and Second Type semiconductor layer composition.Further, in order to mention
The growth quality of high epitaxial structure before growing epitaxial structure on substrate, can also grow unintentional doping half on substrate
Conductor layer.
In one embodiment of the application, first kind semiconductor layer provided by the present application can be n type semiconductor layer, and the
Two type semiconductor layers can be p type semiconductor layer.
It should be noted that epitaxial structure provided by the embodiments of the present application is not limited to include first kind semiconductor
Layer, active layer and Second Type semiconductor layer can also include the material layer of other optimized emissions, not do specifically to this application
Limitation.
As shown in figure 4, corresponding step S2, forms back away from 10 side of substrate in the Second Type semiconductor 130
Face electrode 140.
In one embodiment of the application, it can also be more that rear electrode provided by the present application, which can be the metal layer of single layer,
The lamination of a metal layer is not particularly limited this application.
As shown in figure 5, corresponding step S3, forms second insulating layer away from the one side of substrate in the rear electrode 140
220。
In the embodiment of the present application, by the setting of second insulating layer, avoid the rear electrode of different chip regions and key
Layer electrical connection is closed, and makes chip region misconnection on electrically-conductive backing plate.
It should be noted that the embodiment of the present application is not particularly limited the material and thickness of second insulating layer, to this
It needs specifically to be designed according to practical application.
As shown in fig. 6, corresponding step S4, forms at least one aperture 221 in the second insulating layer 220.
In one embodiment of the application, aperture provided by the present application can be made using photoetching process, i.e., second
Insulating layer forms mask layer away from one side of substrate, and mask layer has the hollow part of the exposed aperture, then carries out to the hollow part
Etching forms the aperture in second insulating layer, finally removes mask layer.
As shown in fig. 7, corresponding step S5, in the second insulating layer 220 away from 10 side of substrate deposition, one bonding
Layer 300, the bonded layer 300 is contacted by the aperture 221 with the rear electrode 140.
As shown in figure 8, corresponding step S6, is bonded an electrically-conductive backing plate away from 10 side of substrate in the bonded layer 300
400。
In one embodiment of the application, the electrically-conductive backing plate provided by the present application can be conductive radiator substrate, and then improve
The heat-sinking capability of vertical high voltage light-emitting diode chip for backlight unit.
As shown in figure 9, corresponding step S7, after removing the substrate 10, removes the unintentional doping semiconductor layer 20.
In one embodiment of the application, the application can be using the removal of the techniques such as laser lift-off, dry etching, wet etching
Substrate and unintentional doping semiconductor layer, are not particularly limited this application.
As shown in Figure 10, corresponding step S8 isolates the first chip region extremely from the first kind semiconductor layer 110 etching
The chip region N, region exposes the second insulating layer 220 between arbitrary neighborhood chip region, and the second chip region is to N core
Section all has the interconnecting piece 141 of exposed respective respective back surfaces electrode 140, wherein the aperture is located at first chip
Area, N are the integer not less than 2；
In one embodiment of the application, the first chip region is isolated to N core from first kind semiconductor layer etching
Section, region exposes the second insulating layer between arbitrary neighborhood chip region, and the second chip region to the chip region N all has
The interconnecting piece of the exposed rear electrode, comprising:
The first chip region to the chip region N, arbitrary neighborhood chip region are isolated from first kind semiconductor layer etching
Between region expose the second insulating layer；
Using step etching technics, second chip region to the chip region the N is etched to be formed with exposed respective
The interconnecting piece of respective back surfaces electrode.
In order to improve the efficient lighting area of vertical high voltage light emitting diode, the jth core provided by the embodiments of the present application
The connecting portion of section is in the jth chip region close to the side edge of -1 chip region of jth.
In one embodiment of the application, the first chip region provided by the present application to the second chip region can be arranged in "-" type
Column or arch arrangement arranged in a ring or that title is end to end, are not particularly limited this application.
As shown in figure 11, corresponding step S9 is exhausted away from 400 side of electrically-conductive backing plate deposition first in the epitaxial structure
Edge layer 210, first insulating layer 210 cover the exposed surface that the epitaxial structure deviates from 400 side of electrically-conductive backing plate.
It should be noted that the first insulating layer covering epitaxial structure provided by the embodiments of the present application deviates from the electrically-conductive backing plate
The exposed surface of side, i.e. the first insulating layer cover the surface of the exposed first kind semiconductor layer in all chip regions, adjacent chips
At the exposed interconnecting piece in side, rear electrode between area and surface that second insulating layer is exposed away from electrically-conductive backing plate side.
Further, first insulating layer provided by the embodiments of the present application also covers the side of the epitaxial structure, into
And the case where avoiding vertical high voltage light emitting diode from leaking electricity.
As shown in figure 12, corresponding step S10, forms the first cutout openings to N hollow out on first insulating layer 210
To N connection aperture (connection aperture 212), the i-th cutout openings are located at i-th for aperture (cutout openings 211) and the second connection aperture
At the first kind semiconductor of chip region and jth connection aperture is located at the interconnecting piece of jth chip region, and i is just no more than N
Integer, j are the positive integer not less than 2 and no more than N.
In one embodiment of the application, cutout openings provided by the present application and connection aperture can use photoetching process system
It forms.
As shown in figure 13, corresponding step S11 deviates from the 400 side shape of electrically-conductive backing plate in first insulating layer 210
At the first connection electrode to N-1 connection electrode (connection electrode 510) and front electrode 520, wherein kth connection electrode passes through
Kth cutout openings connect the rear electrode of+1 chip region of first kind conductive layer and kth of aperture and kth chip region with kth+1
It contacts and first kind conductive layer contact of the front electrode by the N cutout openings and the chip region the N, k
For the positive integer no more than N-1.
Correspondingly, the embodiment of the present application also provides a kind of vertical high voltage light-emitting diode chip for backlight unit, comprising:
Electrically-conductive backing plate；
Bonded layer on the electrically-conductive backing plate；
Deviate from the second insulating layer of the electrically-conductive backing plate side positioned at the bonded layer, is formed in the second insulating layer
At least one aperture；
Deviate from the rear electrode of the electrically-conductive backing plate side positioned at the second insulating layer, the rear electrode passes through described
Aperture is contacted with the bonded layer；
Deviate from the epitaxial structure of the electrically-conductive backing plate side positioned at the rear electrode, the epitaxial structure is divided into first
Chip region to the chip region N, region exposes the second insulating layer between arbitrary neighborhood chip region, and the second chip region is to
The chip region N all has the interconnecting piece of exposed respective respective back surfaces electrode, wherein the aperture is located at first chip region, and N is
Integer not less than 2；
The epitaxial structure is covered away from the first insulating layer of the exposed surface of the electrically-conductive backing plate side, wherein described the
It is formed with the first cutout openings to N cutout openings and second on one insulating layer and connects aperture to N connection aperture, the i-th hollow out
Aperture is located at the first kind semiconductor of the i-th chip region and jth connection aperture is located at the interconnecting piece of jth chip region, and i is
Positive integer no more than N, j are the positive integer not less than 2 and no more than N；
And positioned at the first insulating layer away from the electrically-conductive backing plate side the first connection electrode to N-1 connection electrode
And front electrode, wherein kth connection electrode connect the first kind of aperture Yu kth chip region by kth cutout openings with kth+1
The rear electrode of+1 chip region of type conductive layer and kth contact and the front electrode by the N cutout openings with it is described
The first kind conductive layer contact of the chip region N, k are the positive integer no more than N-1.
In one embodiment of the application, the connecting portion of the jth chip region provided by the present application is in the jth chip
Side edge of the area close to -1 chip region of jth.
And first insulating layer provided by the present application also covers the side of the epitaxial structure.
Further, the electrically-conductive backing plate provided by the embodiments of the present application is conductive radiator substrate, to improve vertical high voltage
The heat dissipation performance of light emitting diode.
In one embodiment of the application, the first kind semiconductor layer provided by the present application is n type semiconductor layer, and institute
Stating Second Type semiconductor layer is p type semiconductor layer.
The embodiment of the present application provides a kind of vertical high voltage light-emitting diode chip for backlight unit and preparation method thereof, wherein.By hanging down
Rear electrode at first chip region is passed through aperture and bonded layer and electrically-conductive backing plate by the design of straight high pressure light-emitting diode chip
Electrical connection, and then without being performed etching and its exposed rear electrode in the first chip region, guarantee vertical high voltage light-emitting diodes tube core
The efficient lighting area of piece is larger；And first the rear electrode of chip region do not need routing, save cost, improving can
By property；In addition, each chip region current expansion is all vertical direction, and the rear electrode of the first chip region and the chip region N
Front electrode forms vertical structure, so that the current expansion of vertical high voltage light-emitting diode chip for backlight unit is preferable, and then can be avoided electricity
It flows congestion and improves electric current tolerance；In addition, the light type of vertical high voltage light-emitting diode chip for backlight unit is preferable, meet lambertian distribution and
It is easier to light distribution.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and
It is to fit to the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. a kind of production method of vertical high voltage light-emitting diode chip for backlight unit characterized by comprising
There is provided a substrate and epitaxial structure, the epitaxial structure includes partly leading in the first kind on the substrate of being sequentially overlapped
Body layer, active area and Second Type semiconductor layer；
Rear electrode is formed away from the one side of substrate in the Second Type semiconductor；
Second insulating layer is formed away from the one side of substrate in the rear electrode；
At least one aperture is formed on the second insulating layer；
The second insulating layer away from the one side of substrate deposit a bonded layer, the bonded layer by the aperture with it is described
Rear electrode contact；
An electrically-conductive backing plate is bonded away from the one side of substrate in the bonded layer；
Remove the substrate；
It is etched from the first kind semiconductor layer and isolates the first chip region to the chip region N, between arbitrary neighborhood chip region
Region exposes the second insulating layer, and the second chip region to the chip region N all has exposed respective respective back surfaces electrode
Interconnecting piece, wherein the aperture is located at first chip region, and N is the integer not less than 2；
The first insulating layer is deposited away from the electrically-conductive backing plate side in the epitaxial structure, the first insulating layer covering is described outer
Prolong the exposed surface that structure deviates from the electrically-conductive backing plate side；
The first cutout openings to N cutout openings and the second connection aperture to N connection are formed on the first insulating layer to open
Hole, the i-th cutout openings are located at the first kind semiconductor of the i-th chip region and jth connection aperture is located at the company of jth chip region
At socket part, i is the positive integer no more than N, and j is the positive integer not less than 2 and no more than N；
The first connection electrode is formed to N-1 connection electrode and front away from the electrically-conductive backing plate side in first insulating layer
Electrode, wherein kth connection electrode is conductive by the first kind that kth cutout openings connect aperture and kth chip region with kth+1
The rear electrode of layer and+1 chip region of kth contacts and the front electrode passes through the N cutout openings and the N core
The first kind conductive layer contact of section, k are the positive integer no more than N-1.
2. the production method of vertical high voltage light-emitting diode chip for backlight unit according to claim 1, which is characterized in that the substrate
Unintentional doping semiconductor layer is also formed between the epitaxial structure, wherein after removing the substrate, and etching is isolated
Before first chip region to the chip region N, further includes:
Remove the unintentional doping semiconductor layer.
3. the production method of vertical high voltage light-emitting diode chip for backlight unit according to claim 1, which is characterized in that from described
One typeSemiconductor layerEtching isolates the first chip region to the chip region N, and region exposes institute between arbitrary neighborhood chip region
Second insulating layer is stated, and the second chip region to the chip region N all has the interconnecting piece of the exposed rear electrode, comprising:
From the first kindSemiconductor layerIt etches and isolates the first chip region to the chip region N, between arbitrary neighborhood chip region
Region exposes the second insulating layer；
Using step etching technics, second chip region to the chip region the N is etched to be formed with exposed respectively corresponding
The interconnecting piece of rear electrode.
4. the production method of vertical high voltage light-emitting diode chip for backlight unit according to claim 1, which is characterized in that the jth
The connecting portion of chip region is in the jth chip region close to the side edge of -1 chip region of jth.
5. the production method of vertical high voltage light-emitting diode chip for backlight unit according to claim 1, which is characterized in that described first
Insulating layer also covers the side of the epitaxial structure.
6. a kind of vertical high voltage light-emitting diode chip for backlight unit characterized by comprising
Electrically-conductive backing plate；
Bonded layer on the electrically-conductive backing plate；
Deviate from the second insulating layer of the electrically-conductive backing plate side positioned at the bonded layer, is formed at least in the second insulating layer
One aperture；
Deviate from the rear electrode of the electrically-conductive backing plate side positioned at the second insulating layer, the rear electrode passes through the aperture
It is contacted with the bonded layer；
Deviate from the epitaxial structure of the electrically-conductive backing plate side positioned at the rear electrode, the epitaxial structure is divided into the first chip
The chip region Qu Zhi N, region exposes the second insulating layer between arbitrary neighborhood chip region, and the second chip region is to N core
Section all has the interconnecting piece of exposed respective respective back surfaces electrode, wherein the aperture is located at first chip region, and N is not
Integer less than 2；
The epitaxial structure is covered away from the first insulating layer of the exposed surface of the electrically-conductive backing plate side, wherein described first absolutely
It is formed with the first cutout openings to N cutout openings and second in edge layer and connects aperture to N connection aperture, the i-th cutout openings
At the first kind semiconductor of the i-th chip region and jth connection aperture is located at the interconnecting piece of jth chip region, and i is little
In the positive integer of N, j is the positive integer not less than 2 and no more than N；
And positioned at the first insulating layer away from the electrically-conductive backing plate side the first connection electrode to N-1 connection electrode and just
Face electrode, wherein aperture is connect with kth+1 by kth cutout openings for kth connection electrode and the first kind of kth chip region is led
The rear electrode of+1 chip region of electric layer and kth contacts and the front electrode passes through the N cutout openings and the N
The first kind conductive layer contact of chip region, k are the positive integer no more than N-1.
7. vertical high voltage light-emitting diode chip for backlight unit according to claim 6, which is characterized in that the company of the jth chip region
Socket part is located at the jth chip region close to the side edge of -1 chip region of jth.
8. vertical high voltage light-emitting diode chip for backlight unit according to claim 6, which is characterized in that first insulating layer also covers
Cover the side of the epitaxial structure.
9. vertical high voltage light-emitting diode chip for backlight unit according to claim 6, which is characterized in that the electrically-conductive backing plate is conduction
Heat-radiating substrate.
10. vertical high voltage light-emitting diode chip for backlight unit according to claim 6, which is characterized in that the first kind is partly led
Body layer is n type semiconductor layer, and the Second Type semiconductor layer is p type semiconductor layer.
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| CN110085619B (en) | 2021-04-27 |
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