CN104600164B - Efficient current injection light-emitting diode and method for manufacturing same - Google Patents
Efficient current injection light-emitting diode and method for manufacturing same Download PDFInfo
- Publication number
- CN104600164B CN104600164B CN201510061407.XA CN201510061407A CN104600164B CN 104600164 B CN104600164 B CN 104600164B CN 201510061407 A CN201510061407 A CN 201510061407A CN 104600164 B CN104600164 B CN 104600164B
- Authority
- CN
- China
- Prior art keywords
- gap current
- extendings
- gap
- current extendings
- luminous zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Abstract
The invention discloses an efficient current injection light-emitting diode and a method for manufacturing the same, and belongs to the field of photoelectric technologies. The method includes manufacturing a first P-GaP current spreading layer, a second P-GaP current spreading layer and a third P-GaP current spreading layer in three separate procedures; manufacturing patterns on the third P-GaP current spreading layer; manufacturing the second P-GaP current spreading layer by means of etching; manufacturing patterns on the second P-GaP current spreading layer; manufacturing the first P-GaP current spreading layer by means of etching. Doped elements of the first P-GaP current spreading layer, the second P-GaP current spreading layer and the third P-GaP current spreading layer are magnesium elements and have gradient doping concentration. The efficient current injection light-emitting diode and the method have the advantages that current injection distribution is changed, accordingly, the current injection efficiency can be greatly improved, the illumination intensity of the light-emitting diode can be improved, and the illumination efficiency can be effectively improved.
Description
Technical field
The invention belongs to photoelectron technical field, more particularly to the manufacturing technology neck of AlGaInP quaternary series LED
Domain.
Background technology
Quaternary system AlGaInP is a kind of semi-conducting material with direct broad-band gap, is widely used to various photoelectricity
The preparation of sub- device.Because material emission wave band can be with the feux rouges of covering visible light to yellow green wave band, the visible ray being thus made
Light emitting diode is received significant attention.
Traditional AlGaInP light-emitting diode in vertical structure by thick P-GaP current extendings carry out it is extending transversely after
Inject a current into luminous zone, on the one hand because P-GaP current expansions are limited in one's ability, base part near zone current density compared with
Height, ionization electrode zone current density farther out is relatively low, causes overall current injection efficiency relatively low, so as to reduce light-emitting diodes
The light extraction efficiency of pipe.On the other hand thick P-GaP needs growth time more long, and source consumption is higher, causes cost to greatly increase.
High brightness reversed polarity AlGaInP chip realizes that substrate is replaced using bonding technology, uses the silicon substrate of good in thermal property
（The thermal conductivity of silicon is about 1.5W/K.cm）Instead of gallium arsenide substrate（The thermal conductivity of GaAs is about 0.8W/K.cm）, chip has
More low-heat resistance, heat dispersion is more preferable.Reflection efficiency is improved using the Omni-directional reflector technology of high reflectance.Using surface
Coarsening technique improves the total reflection of chip and encapsulating material interface, and brightness can be higher.But because making step is various, technique
It is extremely complex, cause cost of manufacture higher, yield rate is low.
The content of the invention
The present invention seeks to propose a kind of efficient current injection luminescent diode that can lift light emitting diode light extraction efficiency.
The present invention includes second electrode, substrate, N-GaAs transition zones, AlAs/AlGaAs reflecting layer, N- successively from top to bottom
AlGaInP lower limit layers, MQW multiple quantum well active layers, P-AlGaInP upper limiting layers, P-GaInP cushions, P-GaP electric currents expand
Exhibition layer, transparency conducting layer and first electrode, are characterized in：The P-GaP current extendings are three layers, respectively a P-GaP
Current extending, patterned 2nd P-GaP current extendings and patterned 3rd P-GaP current extendings.
Electric current carries out extending transversely after first electrode is injected into transparency conducting layer in transparency conducting layer, mainly passes through
Most of electric current is injected into active area by the 3rd P-GaP current extendings, and the 2nd P-GaP current extendings injection portion of electrical current is arrived
Active area, a P-GaP current extendings inject a small amount of electric current to active area, and distributed electrical stream injection mode slow down electric current and exist
The accumulation of base part, reduces the invalid injection of electric current, therefore the present invention changes the distribution of electric current injection, greatly promotes electric current
Injection efficiency, improves the luminous intensity of light emitting diode, can effective improving luminous efficiency.
In addition, a P-GaP current extendings thickness of the invention is 1500~2000nm, patterned 2nd P-GaP electricity
Stream extension layer thickness is 50~70nm, and patterned 3rd P-GaP current extendings thickness is 50~70nm.
First P-GaP current extendings thickness is beneficial to extending transversely, the 2nd P-GaP current expansions after electric electric current injection
It is to avoid the etch depth when being patterned too deep, causing that layer and the 3rd P-GaP current extendings design relatively thin thickness
Pattern side wall step is too high, and transparent conductive film step coverage is deteriorated, and resistance can be caused to increase, and influences the extension of electric current.
With magnesium as doped chemical, doping concentration is 8 × 10 to first P-GaP current extendings17cm-3~1 × 1018cm-3。
With magnesium as doped chemical, doping concentration is 5 × 10 to 2nd P-GaP current extendings18cm-3~8 × 1018cm-3。
With magnesium as doped chemical, doping concentration is 1 × 10 to 3rd P-GaP current extendings19cm-3~3 × 1019cm-3。
Magnesium-doped concentration is distributed along longitudinal direction in staged in three layers of magnesium-doped P-GaP current extendings of the present invention, more
Doping concentration close to the magnesium of cushion is lower.Doping concentration is to ensure electric current by electrically conducting transparent in staged distribution
Layer is injected into when three layers of P-GaP conduct has directionality, it is to avoid electric current is directly directly injected into current extending from surrounding them,
But active area, motor current injection efficiency are injected from around luminous zone after three layers of P-GaP current extendings are shunted.
In addition, transparency conducting layer of the present invention is indium tin oxide, thickness is 250~300nm.The thickness is by optics meter
Calculate the optimal optical thickness that gained correspondence feux rouges plays enhanced shine.
It is another object of the present invention to propose a kind of above-mentioned a kind of efficient electric streamer that can realize high finished product rate and low cost
Enter the production method of light emitting diode.
Production method of the present invention is comprised the following steps：
1）Make epitaxial wafer：In one side epitaxial growth N-GaAs cushions, the AlAs/AlGaAs successively of permanent substrate GaAs
Reflecting layer, N-AlGaInP lower limit layers, MQW multiple quantum well active layers, P-AlGaInP upper limiting layers, P-GaInP cushions,
One P-GaP current extendings, the 2nd P-GaP current extendings and the 3rd P-GaP current extendings；First P-GaP current expansions
Layer, the 2nd P-GaP current extendings and the 3rd P-GaP current extending doped chemicals are magnesium（Mg）Element, and a P-GaP
Current extending doping concentration is 8 × 1017cm-3~1 × 1018cm-3, the 2nd P-GaP current extendings doping concentration be 5 ×
1018cm-3~8 × 1018cm-3, the 3rd P-GaP current extendings doping concentration is 1 × 1019cm-3~3 × 1019cm-3；
2）Figure is produced on the 3rd P-GaP current extendings, the 2nd P-GaP current extendings, Ran Hou is etched
Figure is produced on 2nd P-GaP current extendings, a P-GaP current extendings are etched；
3）Transparent conductive film is deposited on the P-GaP current extendings by graphical treatment；
4）First electrode is made on transparent conductive film；
5）Second electrode is made in the another side of permanent substrate GaAs；
6）Made annealing treatment using RTA.
It is characteristic of the invention that：When the P-GaP current extendings of epitaxial wafer are made, with magnesium as doped chemical, using not
Same doping concentration, produces three layers of P-GaP current extendings, then produce P-GaP electric currents by secondary wet process engraving method
After the figure of extension layer, the material for depositing transparent conductive film is indium tin oxide.
The present invention has three layers of P-GaP current spread layer constructions of different levels of doping by graphical treatment, forms same
The different contact effect of indium tin oxide, electric current flows into indium and tin oxide film layer, indium and tin oxide film by first electrode
Layer lateral resistance less than the contact resistance with P-GaP, electric current first carried out on indium tin oxide it is extending transversely after, then by three layers
P-GaP current extendings are shunted again, and then enter into active layer, so as to change the distribution of electric current injection, greatly promote electricity
Stream injection efficiency, improves the luminous intensity of light emitting diode.Process is simple, simultaneously because reducing P-GaP current extendings
Thickness, with low cost, the advantage of yield high, suitable mass production, beneficial to the product for obtaining high-quality, low cost.
By the step 2）In, figure is first produced on the 3rd P-GaP current extendings, then in the 2nd P-GaP electricity
Figure is produced on stream extension layer, after graphical treatment, a P-GaP current extendings region is spilt positioned at luminous zone center
Domain, accounts for whole luminous zone area 40~60%, spills the 2nd P-GaP current extendings region positioned at luminous zone central region, accounts for whole
Individual luminous zone area 20~40%, remaining 3rd P-GaP current extendings region accounts for luminous zone face positioned at luminous zone fringe region
Product 10~30%.
When being patterned, doping concentration the 3rd P-GaP current extendings region higher is located at luminous zone fringe region
Account for luminous zone area 10~30%, it is ensured that form good electrical contact with indium tin oxide, beneficial to the injection of electric current, be
The first passage of electric current injection, the 2nd moderate P-GaP current extendings region of doping concentration is located at luminous zone central region, accounts for
Whole luminous zone area 20~40%, can form good electrical contact with indium tin oxide, but contact resistance is more than the 3rd P-
GaP current extendings with indium tin oxide contact resistance, be electric current injection second channel, the minimum P- of doping concentration
GaP current extendings region is located at luminous zone central area, accounts for whole luminous zone area 40~60%, is formed with indium tin oxide
Poor electrical contact, there is larger contact electrode, quite with formation schottky junction, it is to avoid a large amount of injections of electrode.
In addition, in order to ensure that indium tin oxide forms good electrical contact with P-GaP, ensureing substrate GaAs with the second electricity
Pole forms good electrical contact, and RTA annealing temperatures of the present invention are 400~450 DEG C, 10~30s of annealing time.
Brief description of the drawings
Fig. 1 is a kind of structural representation of finished product of the present invention.
Specific embodiment
First, it is as shown in Figure 1 that manufacturing step of the present invention is as follows：
1st, epitaxial wafer is made：N-GaAs transition zones are grown successively on a permanent substrate GaAs101 faces using MOCVD device
102nd, AlAs/AlGaAs reflecting layer 103, N-AlGaInP lower limit layers 104, MQW multiple quantum well active layers 105, P-AlGaInP
Upper limiting layer 106, P-GaInP cushions 107, a magnesium-doped P-GaP current extendings 108, the 2nd P-GaP current expansions
Layer 109, the 3rd P-GaP current extendings 110.
The preferred thickness 1800nm of a wherein P-GaP current extendings 108, the 2nd P-GaP current extendings 109 are preferred thick
Degree 60nm, the preferred thickness 60nm of the 3rd P-GaP current extendings 110, three layers of P-GaP current extending doped chemicals are magnesium
（Mg）, to ensure certain current expansion ability.The preferred doping concentration of first P-GaP current extendings 108 is 9 × 1017cm-3,
The preferred doping concentration of the 2nd P-GaP current extendings 109 on first P-GaP current extendings 108 is 6 × 1018cm-3, second
The preferred doping concentration of the 3rd P-GaP current extendings 110 on P-GaP current extendings 109 is 2 × 1019cm-3。
2nd, three layers of P-GaP current extendings 108,109,110, spin coating positive-tone photo thereon are cleaned using 511 cleaning fluids
Glue, by exposure, special pattern is produced in development.Again by being 1 using volume ratio after plasma gluing：1：5 hydrochloric acid：Nitre
Acid：Water mixed liquid, etches 60s, etches the 2nd P-GaP current extendings 109, and etch depth is 60~70nm.
3rd, the sample immersion acetone soln that will make figure carries out ultrasonic cleaning 10min, in the one side spin coating for having figure
Positive photoresist, by exposure, special pattern is produced in development.Again by being 1 using volume ratio after plasma gluing：1：5
Hydrochloric acid：Nitric acid：Water mixed liquid, etches 60s, etches a P-GaP current extendings 110, and etch depth is 60~70nm.
After graphical treatment, a P-GaP current extendings region is spilt positioned at luminous zone central area, account for whole luminous
Area's area 40~60%, spills the 2nd P-GaP current extendings region positioned at luminous zone central region, accounts for whole luminous zone area
20~40%, remaining 3rd P-GaP current extendings region accounts for luminous zone area 10~30% positioned at luminous zone fringe region.
4th, the sample immersion acetone soln that will make figure carries out ultrasonic cleaning 10min, using electron beam evaporation plating mode,
It is the indium tin oxide transparent film 111 of 250nm in the surface deposit thickness of patterned P-GaP current extendings 108,109,110,
Indium tin oxide transparent film 111 ensures that more than 95% square resistance is within 10 in 620nm wave band transmitances.
5th, the sample immersion acetone soln that will be deposited with tin indium oxide carries out ultrasonic cleaning 10min, spin coating negative photoresist,
Through overbaking, exposure, baking produces electrode pattern, after sample is spin-dried for by high speed spinner, using electron beam after development
Evaporation mode is deposited with first electrode 112, and electrode material is Cr, Pt, Au, and thickness is respectively 30nm, 80nm, 2000nm.
6th, ground by grinder, by chip thinning to 200 ± 10 μ m thicks.
7th, ground sample immersion acetone soln is carried out into ultrasonic cleaning 10min, by the way of electron beam evaporation plating
The back side of substrate GaAs101 makes second electrode 113, and electrode material is AuGe, and thickness is respectively 200nm.
8th, chip is annealed using RTA annealing furnaces, 420 DEG C of annealing temperature, annealing time 20s.Complete device
Make.
2nd, the product structure feature being made：
As shown in figure 1, being disposed with N-GaAs transition zones 102, AlAs/ in permanent substrate GaAs101 one sides
AlGaAs reflecting layer 103, N-AlGaInP lower limit layers 104, MQW multiple quantum well active layers 105, P-AlGaInP upper limiting layers
106th, P-GaInP cushions 107, a P-GaP current extendings 108, the 2nd P-GaP current extendings 109, the 3rd P-GaP
Current extending 110, transparency conducting layer 111, first electrode 112, the second electricity is set in the another side of a permanent substrate GaAs101
Pole 113.
Because the current distributing of the P-GaP current extendings with patterned three layers of different levels of doping is acted on, by oxygen
The electric current for changing the conduction of indium tin nesa coating is most of from luminous zone surrounding injection active area, so as to reduce electric current under the electrodes
The accumulation of side, reduces the invalid injection of electric current, improves luminous efficiency.
Claims (10)
1. a kind of efficient current injection luminescent diode, include successively from top to bottom second electrode, substrate, N-GaAs transition zones,
AlAs/AlGaAs reflecting layer, N-AlGaInP lower limit layers, MQW multiple quantum well active layers, P-AlGaInP upper limiting layers, P-
GaInP cushions, P-GaP current extendings, transparency conducting layer and first electrode, it is characterised in that the P-GaP current expansions
Layer is three layers, a respectively P-GaP current extendings, patterned 2nd P-GaP current extendings and the patterned 3rd
P-GaP current extendings；First P-GaP current extendings region is located at luminous zone central area, accounts for whole luminous zone area 40
~60%；Patterned 2nd P-GaP current extendings region be located at luminous zone central region, account for whole luminous zone area 20~
40%；Patterned 3rd P-GaP current extendings region accounts for luminous zone area 10~30% positioned at luminous zone fringe region；First
P-GaP current extending doping concentrations are minimum, and the 2nd P-GaP current extending doping concentrations are moderate, the 3rd P-GaP current expansions
Layer doping concentration is higher.
2. efficient current injection luminescent diode according to claim 1, it is characterised in that：First P-GaP current extendings
Thickness is 1500~2000nm, and patterned 2nd P-GaP current extendings thickness is 50~70nm, patterned 3rd P-
GaP current extendings thickness is 50~70nm.
3. efficient current injection luminescent diode according to claim 1, it is characterised in that：First P-GaP current extendings
With magnesium as doped chemical, doping concentration is 8 × 1017cm-3~1 × 1018cm-3。
4. efficient current injection luminescent diode according to claim 1, it is characterised in that：2nd P-GaP current extendings
With magnesium as doped chemical, doping concentration is 5 × 1018cm-3~8 × 1018cm-3。
5. efficient current injection luminescent diode according to claim 1, it is characterised in that：3rd P-GaP current extendings
With magnesium as doped chemical, doping concentration is 1 × 1019cm-3~3 × 1019cm-3。
6. efficient current injection luminescent diode according to claim 1, it is characterised in that the transparency conducting layer is indium tin
Oxide, thickness is 250~300nm.
7. the production method of efficient current injection luminescent diode as claimed in claim 1, comprises the following steps：
1）Make epitaxial wafer：In one side epitaxial growth N-GaAs transition zones, the AlAs/AlGaAs reflections successively of permanent substrate GaAs
Layer, N-AlGaInP lower limit layers, MQW multiple quantum well active layers, P-AlGaInP upper limiting layers, P-GaInP cushions, P-GaP
Current extending；
2）Treatment is patterned to P-GaP current extendings；
3）Transparent conductive film is deposited on the P-GaP current extendings of graphical treatment；
4）First electrode is made on transparent conductive film；
5）Second electrode is made in the another side of permanent substrate GaAs；
6）Made annealing treatment using RTA；
It is characterized in that：In the step 1）In, the P-GaP current extendings make in three times, first in the P-AlGaInP upper limits
A P-GaP current extendings are made on preparative layer, the 2nd P-GaP electric currents are then made on a P-GaP current extendings expands
Exhibition layer, finally makes the 3rd P-GaP current extendings on the 2nd P-GaP current extendings；First P-GaP current extendings,
2nd P-GaP current extendings and the 3rd P-GaP current extending doped chemicals are magnesium elements, and a P-GaP electric currents expand
Exhibition layer doping concentration is 8 × 1017cm-3~1 × 1018cm-3, the 2nd P-GaP current extendings doping concentration is 5 × 1018cm-3~
8×1018cm-3, the 3rd P-GaP current extendings doping concentration is 1 × 1019cm-3~3 × 1019cm-3；In the 3rd P-GaP electric currents
Figure is produced on extension layer, the 2nd P-GaP current extendings are etched, then made on the 2nd P-GaP current extendings
Go out figure, etch a P-GaP current extendings.
8. the production method of efficient current injection luminescent diode according to claim 7, it is characterised in that：By the step
Rapid 2）In, figure is first produced on the 3rd P-GaP current extendings, then figure is produced on the 2nd P-GaP current extendings
Shape, after graphical treatment, exposes a P-GaP current extendings region positioned at luminous zone central area, accounts for whole luminous zone face
Product 40~60%, exposes the 2nd P-GaP current extendings region positioned at luminous zone central region, account for whole luminous zone area 20~
40%, remaining 3rd P-GaP current extendings region accounts for luminous zone area 10~30% positioned at luminous zone fringe region.
9. according to claim 7 or 8 efficient current injection luminescent diode production method, it is characterised in that：3rd P-
The graphics depth of GaP current extendings is 80~100nm, and the graphics depth of the 2nd P-GaP current extendings is 80~100nm.
10. the production method of efficient current injection luminescent diode according to claim 7, it is characterised in that：The RTA is moved back
Fiery temperature is 400~450 DEG C, 10~30s of annealing time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510061407.XA CN104600164B (en) | 2015-02-06 | 2015-02-06 | Efficient current injection light-emitting diode and method for manufacturing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510061407.XA CN104600164B (en) | 2015-02-06 | 2015-02-06 | Efficient current injection light-emitting diode and method for manufacturing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104600164A CN104600164A (en) | 2015-05-06 |
| CN104600164B true CN104600164B (en) | 2017-05-24 |
Family
ID=53125805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510061407.XA Active CN104600164B (en) | 2015-02-06 | 2015-02-06 | Efficient current injection light-emitting diode and method for manufacturing same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104600164B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105226158A (en) * | 2015-10-10 | 2016-01-06 | 厦门乾照光电股份有限公司 | A kind of large scale light-emitting diode |
| CN105226157A (en) * | 2015-10-10 | 2016-01-06 | 厦门乾照光电股份有限公司 | A kind of large scale technique for preparing light emitting diode |
| CN105932131A (en) * | 2016-06-22 | 2016-09-07 | 扬州乾照光电有限公司 | Vertical structure AlGaInP-based light-emitting diode and manufacturing method thereof |
| CN106129217A (en) * | 2016-08-22 | 2016-11-16 | 扬州乾照光电有限公司 | There is high brightness AlGaInP light emitting diode and the manufacture method thereof of AZO roughened layer |
| CN108321264A (en) * | 2017-12-22 | 2018-07-24 | 南昌凯迅光电有限公司 | High brightness ito thin film LED chip and its manufacturing method |
| CN109962130A (en) * | 2019-04-15 | 2019-07-02 | 扬州乾照光电有限公司 | A kind of the infrared LED chip and production method of the roughening of six faces |
| CN110197790B (en) * | 2019-06-17 | 2021-07-27 | 苏州长瑞光电有限公司 | Annealing method of III-V semiconductor wafer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6486500B1 (en) * | 2001-12-04 | 2002-11-26 | Epitech Corporation, Ltd. | Led structure having a schottky contact and manufacturing method |
| CN101771122A (en) * | 2010-01-18 | 2010-07-07 | 山东华光光电子有限公司 | AlGaInP system LED with electron hole dual limitation and preparation method thereof |
| CN101834247A (en) * | 2009-03-03 | 2010-09-15 | Lg伊诺特有限公司 | Light emitting device, light emitting device package and lighting system including the same |
| CN204441318U (en) * | 2015-02-06 | 2015-07-01 | 扬州乾照光电有限公司 | A kind of efficient current injection luminescent diode |
-
2015
- 2015-02-06 CN CN201510061407.XA patent/CN104600164B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6486500B1 (en) * | 2001-12-04 | 2002-11-26 | Epitech Corporation, Ltd. | Led structure having a schottky contact and manufacturing method |
| CN101834247A (en) * | 2009-03-03 | 2010-09-15 | Lg伊诺特有限公司 | Light emitting device, light emitting device package and lighting system including the same |
| CN101771122A (en) * | 2010-01-18 | 2010-07-07 | 山东华光光电子有限公司 | AlGaInP system LED with electron hole dual limitation and preparation method thereof |
| CN204441318U (en) * | 2015-02-06 | 2015-07-01 | 扬州乾照光电有限公司 | A kind of efficient current injection luminescent diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104600164A (en) | 2015-05-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104600164B (en) | Efficient current injection light-emitting diode and method for manufacturing same | |
| CN104300059B (en) | Light emitting diode and its manufacture method with distributed conductive via structure | |
| CN104576863B (en) | A kind of high brightness LED and its manufacture method | |
| CN103931004B (en) | Coalescence nano thread structure and its manufacture method with interstitial void | |
| CN102097559B (en) | LED and manufacture method thereof | |
| CN100438110C (en) | LED with the current transfer penetration-enhanced window layer structure | |
| CN103996772B (en) | Light-emitting diode chip and manufacturing method thereof | |
| CN105655462B (en) | High voltage direct current gallium nitride based light emitting diode and its manufacture method | |
| WO2017092451A1 (en) | Light-emitting diode chip and manufacturing method therefor | |
| CN106098876A (en) | A kind of copper base high brightness AlGaInP light emitting diode and manufacture method thereof | |
| CN204441319U (en) | A kind of high brightness LED | |
| CN105355743B (en) | Light emitting diode and preparation method thereof | |
| CN104124321B (en) | Semiconductor light-emitting elements and its manufacture method | |
| CN105355740A (en) | Light-emitting diode and fabrication method thereof | |
| CN108461581B (en) | Surface phasmon enhances volcano shape of the mouth as one speaks 3D vertical structure LED structure and preparation method | |
| CN105932131A (en) | Vertical structure AlGaInP-based light-emitting diode and manufacturing method thereof | |
| CN204441318U (en) | A kind of efficient current injection luminescent diode | |
| CN206003793U (en) | A kind of copper base high brightness AlGaInP light emitting diode | |
| CN204189818U (en) | There is the light-emitting diode of distributed conductive via structure | |
| CN203607447U (en) | Led chip | |
| CN104617198A (en) | Light emitting diode using ITO regional sheet resistance change to improve current spreading and manufacturing method | |
| CN205790047U (en) | A kind of vertical stratification AlGaInP based light-emitting diode | |
| CN105895755A (en) | Manufacturing method of GaN-based light emitting diode with strippable structure | |
| CN104681678B (en) | The light emitting diode and its manufacture method of a kind of double mirror structure | |
| CN206003830U (en) | A kind of patterning high brightness AlGaInP light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |