CN105047788A - Thin-film structure light-emitting diode (LED) chip based on silver-based metal bonding and preparation method of thin-film structure LED chip - Google Patents
Thin-film structure light-emitting diode (LED) chip based on silver-based metal bonding and preparation method of thin-film structure LED chip Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract
The invention discloses a thin-film structure light-emitting diode (LED) chip based on silver-based metal bonding and a preparation method of the thin-film structure LED chip. AgCuIn alloy is adopted as a bonding metal layer, so that the bonding temperature is reduced and the retention time is shortened; AgCuIn bonding can be finished at relatively low bonding temperature and bonding pressure; the bonding time is shortened; reduction of the injuries to the photoelectric property of an LED epitaxial layer in the bonding process is facilitated; by a bonding metal layer of the AgCuIn alloy, the cavity phenomenon in the bonding process is removed; stress release of the LED epitaxial layer is facilitated; the AgCuIn bonding is high in mechanical property and has good conductivity and heat-conducting property; prolonging of the service life of the LED chip is facilitated; with the AgCuIn as bonding metal, the manufacturing cost of the vertical structure LED chip is greatly reduced; and marketing development of the vertical structure LED chip is facilitated.
Description
Technical field
The present invention relates to membrane structure LED chip, particularly relate to a kind of membrane structure LED chip based on silver-base metal bonding and preparation method thereof.
Background technology
GaN base power-type membrane structure LED based on laser lift-off and bonding techniques has very wide application prospect in high-power illumination field.The committed step of the program be by the GaN epitaxial layer of grown on sapphire after preparing the p face structures such as p-electrode, be bonded in the translate substrate of the conductive and heat-conductives such as Si or Cu, then utilize laser lift-off technique removal as the sapphire of growth substrates, and the N polar GaN surface of exposing, carry out surface coarsening, then prepare n-electrode.Bonding techniques needs to realize high bond strength to ensure rate of finished products, needs good conductive and heat-conductive ability to reduce resistance, to improve the tube core life-span; Last bonding techniques generally will realize certain Stress Release.In bonding process, the selection of bonding medium directly affects above-mentioned performance and and then affects the performance of membrane structure LED.
AuSn bonding is bonding method common in power-type membrane structure LED preparation technology.AuSn bonding techniques generally adopts the gold-tin alloy preformed sheet of eutectic as dielectric layer, epitaxial loayer and translate substrate is bonded together in the scope of 300 ~ 500 DEG C.AuSn bonding has that mechanical strength is high, wettability good, be beneficial to the advantages such as heat-conductivity conducting.On the other hand, because AuSn bonding is based on liquid-solid-phase changeable, there are time solid-state δ phase and ζ phase two kinds of stable phases, the randomness of the diffusion in liquid-solid-phase changeable process result in unordered and uncontrollable (Mat.Sci.Eng.B, 175,213 of Entropy density deviation, (2010)) stress build up, affect bond strength, the thermal conductivity of bonding metal layer and conductance, the AuSn of melting under stress can overflow to surrounding, is unfavorable for subsequent technique.
Au-Au bonding is also the common technology means in prepared by power-type membrane structure LED.Different from AuSn bonding, Au-Au bonding does not need similar gold-tin alloy as preformed sheet, but the Au of evaporation 1 ~ 3 μm is distinguished at epitaxial loayer and translate substrate surface, bonding temperature about 300 DEG C, a little less than AuSn bonding, but bonding pressure is more than AuSn bonding three orders of magnitude (about 6000 ~ 8000kgf/wafer), utilize Au atom or crystal grain again contact interface thermal diffusion obtain bonding closely.The method technique is comparatively simple, is applicable to large-scale industrial production.Its weak point is, need to keep the long period at high temperature under high pressure, fully complete to ensure the counterdiffusion of metal interface, result in opto-electronic device performance and reduce (IEEETransactionsonElectronicsPackagingManufacturing, 31 (2): 159 (2008)).Finally, expensive due to Au, Au-Au bonding adds the manufacturing cost of power-type membrane structure LED.
Silver-base solder uses a widest class hard solder.Its fusing point is moderate, can infiltrate a lot of metal, have good intensity, plasticity, conduction and thermal conductivity.And SnAgCu, SnAg compare Ag conductive rubber has better heat conduction, conductivity, be in power type LED encapsulation, use a more class solder.But be seldom used in the bonding of epitaxial loayer.Braunschweig, Germany University of Science and Technology professor Waag also has the encapsulation (IEEETRANSACTIONSONCOMPONENTS using the method for nanometer and micron Ag particle sintering to carry out power-type LED, PACKAGINGANDMANUFACTURINGTECHNOLOGY, 2 (2): 199 (2012)).Due to LED technique, Ag Base Metal melting temperature, generally lower than 300 DEG C, is difficult to the technique of carrying out the contact of nitrogen face for the vertical thin-film structure LED after substrate desquamation, and lower alloy melting point also can bring the decline of functional reliability simultaneously.Although the bonding of micro-nano Ag particle may solve the problem, it has report on chip bonding, and epitaxial loayer bonding is not reported.
Summary of the invention
In order to solve the problem of bonding cost and reliability, membrane structure LED chip that the invention provides silver-base metal bonding and preparation method thereof, for the preparation of power-type membrane structure LED chip.
One object of the present invention is to provide a kind of membrane structure LED chip based on silver-base metal bonding.
Membrane structure LED chip of the present invention is the light emitting diode (LED) chip with vertical structure based on bonding and laser lift-off, or inverted structure LED chip.
For light emitting diode (LED) chip with vertical structure, the membrane structure LED chip unit based on silver-base metal bonding of the present invention comprises: translate substrate, bonding metal layer, transition zone, reflector, p-electrode, LED epitaxial loayer, n-electrode, n face go out light cone and passivation layer; Wherein, translate substrate is followed successively by bonding metal layer, transition zone, reflector, p-electrode and LED epitaxial loayer from bottom to up; The sub-fraction of LED epitaxial loayer forms n-electrode; Part on the surface of LED epitaxial loayer except n-electrode forms n face and goes out light cone; Reflector and n face go out light cone and form light emitting structures; Laser road plan between chip unit forms passivation layer with the sidewall in etching aisle; Bonding metal layer adopts AgCuIn alloy.
AgCuIn is the ternary alloy three-partalloy of cupric and indium, has good welding performance, lower vapour pressure.There is AgCuln30-5, the models such as AgCuIn24-15, AgCuln85-5, AgCuIn20-31 and AgCuln27-10.Their fusion temperature is followed successively by 770 ~ 800 DEG C, 630 ~ 705 DEG C, 900 ~ 950 DEG C, 540 ~ 575 DEG C and 685 ~ 730 DEG C.Its melting temperature is greater than the technological temperature of n face contact, coordinates the bonding technology of low temperature, elevated pressures, may be used for the vacuum bonding metal of power-type membrane structure LED.
Light emitting diode (LED) chip with vertical structure of the present invention is the bright dipping of nitrogen face, and LED epitaxial loayer comprises n-contact layer, n-layer, Multiple Quantum Well, p-type layer and P type contact layer from top to bottom successively; The sub-fraction of n-contact layer forms n-electrode; The part of surface except n-electrode of alligatoring n-contact layer forms n face and goes out light cone.The thickness of LED epitaxial loayer is between 2 ~ 100 μm.Further, between n-contact layer and n-layer, add current extending, the thickness of current extending is determined, between 10 ~ 80 μm by the thickness of whole LED epitaxial loayer.
Further, light emitting structures also comprises metal Nano structure, in the middle p-type layer that the metal Nano structure of periodic arrangement is embedded in LED epitaxial loayer and P type contact layer.Metal Nano structure comprises nano-pore, metal nanoparticle and medium covering; Wherein, nano-pore is formed in p-type layer and P type contact layer; The metal nanoparticle being wrapped in medium covering is arranged in nano-pore.
N-electrode adopts the metal structure of palladium Pd, indium In, nickel and golden Au, utilizes the stability of metal work function that PdIn alloy is lower and high temperature, stops the diffusion of Ga atom, significantly improve the performance of nitrogen face ohmic contact.The n-electrode of such shape effectively can improve the current expansion characteristic of chip, improves device light efficiency and reliability.P-electrode adopts transparent indium tin oxide ITO.
For inverted structure LED chip, the membrane structure LED chip unit based on silver-base metal bonding of the present invention comprises: LED epitaxial loayer, n-electrode, p-electrode, reflector, bonding metal layer, passivation layer and translate substrate; Wherein, LED epitaxial loayer supremely comprises n-contact layer, multiquantum well region and P type contact layer successively from little; Utilize the method for etching to expose a part of n-contact layer, the n-contact layer exposed prepares n-electrode; P type contact layer prepares p-electrode, p-electrode prepares reflector; Around the sidewall that passivation layer is wrapped in LED epitaxial loayer and n-electrode, prevent electric leakage; Reflector deposits bonding metal layer; LED epitaxial loayer and translate substrate are bonded together by bonding metal layer.
In the AgCuIn alloy that bonding metal layer adopts, the component of Ag is between 40 ~ 50%, and the component of Cu is between 40 ~ 50%, and the component of In is between 10 ~ 20%.
Another object of the present invention is the preparation method providing a kind of membrane structure LED chip based on silver-base metal bonding.
For light emitting diode (LED) chip with vertical structure, the preparation method of the membrane structure LED chip unit based on silver-base metal bonding of the present invention, comprises the following steps:
1) growth substrates of applicable laser lift-off is provided, growth substrates grows non-doped gan layer, growing n-type contact layer, n-layer, Multiple Quantum Well, p-type layer and P type contact layer successively in non-doped gan layer, form LED epitaxial loayer;
2) on LED epitaxial loayer, adopt laser scribing to mark off the LED chip unit of separation, deeply to growth substrates, form laser road plan, laser road plan is cleaned, remove the residue in sidewall damage district and laser road plan;
3) on LED epitaxial loayer, grow one deck mask layer, mask layer etches LED chip unit, is etched to n-layer, form etching aisle, remove mask layer and expose P type contact layer, remove etching injury further, then remove mask layer;
4) regrowth passivation material on LED epitaxial loayer, adopts the method for photoetching prepare figure and carry out wet etching, removes the passivation material on P type contact layer surface, retains laser road plan and the passivation material of etching aisle sidewall, forms passivation layer; 5) evaporation p-electrode on the surface of P type contact layer, then at surperficial evaporation reflector and the transition zone of p-electrode;
6) adopt the mode of electron beam evaporation, at the surface evaporation bond wire simultaneously of transition zone and translate substrate, the material of bond wire adopts AgCuIn alloy, and then para-linkage metal carries out thermal annealing;
7) by evaporation, the translate substrate of bond wire is anchored on the LED epitaxial loayer to be formed in growth substrates, at high temperature under high pressure, translate substrate and LED epitaxial loayer are bonded together, the bond wire on transition zone and the bond wire in translate substrate are fused into one deck bonding metal layer;
8) utilize laser-stripping method to remove growth substrates, and expose non-doped gan layer, the surface of the LED epitaxial loayer of clean stripping;
9) carry out wet method and dry etching, remove non-doped gan layer, expose n-contact layer, and laser road plan is expanded to some extent, release portion residual stress;
10) metal of evaporating n electrode, adopt stripping means to remove part metals, expose most n-contact layer, form n-electrode, annealing obtains stable ohmic contact;
11) carry out the passivation protection of electrode and sidewall, the surface of alligatoring n-contact layer, formation cycle or aperiodic n face go out light cone, thus are formed and comprise the light emitting structures that reflector and n face go out light cone;
12) with machinery or laser cutting LED epitaxial loayer, test and sort obtaining LED chip unit.
Wherein, in step 1) in, the thickness of LED epitaxial loayer is between 2 ~ 100 μm.The GaN carrier concentration of n-contact layer reaches 10
19cm
-3, thickness is between 1 ~ 2 μm.Can also add current extending between n-contact layer and n-layer, thickness is determined, between 10 ~ 80 μm by the thickness of whole LED epitaxial loayer.The carrier concentration of current extending is 10
17cm
-3~ 10
18cm
-3, lateral current and longitudinal series resistance are considered in the selection of parameter simultaneously.Carry out the optimization of Multiple Quantum Well, the cycle of Multiple Quantum Well and trap wide depend on metal nanoparticle size, shape and position, guarantee that surface phasmon excites Multiple Quantum Well to obtain luminescence enhancement.P type contact layer generally adopts the non-of 1 ~ 5nm to mix or N-shaped InGaN, forms the tunnel junction with p-GaN layer.
In step 2) in, adopt laser scribing, LED epitaxial loayer divides the LED chip unit of separation, the degree of depth of laser road plan deeply to growth substrates, then adopts wet etching remove the damage of sidewall and reach the object of alligatoring more than the thickness of LED epitaxial loayer.Scribing using plasma strengthens chemical vapour deposition technique PECVD and grows SiO
2as protective layer, and the protection liquid of spin coating laser scribing, reduce the damage that laser scribing causes LED epitaxial loayer; On the other hand, in following high-temperature acid cleaning process, play the effect of protection LED epitaxial loayer.The sidewall of laser road plan and the inclination angle of growth substrates are between 70 ~ 85 °, and the width of laser road plan is between 10 ~ 50 μm; The wet etching condition adopted is the mixed acid of phosphoric acid and sulfuric acid, and corrosion temperature is between 200 ~ 250 DEG C, and etching time is relevant to the thickness of LED epitaxial loayer, removes the residue that laser scribing produces.The size of sidewall corrosion cone is between 100nm ~ 10 μm.The present invention adopts laser scribing and mixed acid corrosion sidewall segmentation chip unit, efficiently reduces the warpage in epitaxial loayer.The corrosion of sidewall simultaneously forms sidewall alligatoring, is conducive to the outgoing of ambient light.
In step 3) in, on mask layer, exposure obtains the mask of photoresist.Adopt mask layer in the fluorine-based reacting gas etching of inductively coupled plasma ICP, adopt chloro reacting gas to etch further and form etching aisle, remove the damage layer of the sidewall of laser road plan simultaneously further.The etching depth in etching aisle is between 0.5 μm ~ 5 μm.Remove residual mask layer.
In step 4) in, the thickness of passivation material between 300 ~ 500nm, photoetching remove P type contact layer surface passivation material after; in the edge of P type contact layer; in distance 10 μm, edge, some passivation material retains, and forms passivation layer, better to realize sidewall protection.
In step 5) in, p-electrode is transparent conductive electrode, and adopt indium tin oxygen ITO, thickness is between 100 ~ 400nm, and the thickness of emission wavelength, ITO and the thickness of p-type layer are optimized jointly, is formed and increases minus effect.Reflector adopts Al base reflecting electrode or Ag base reflecting electrode.Al base reflecting electrode is TiAl or NiAl, and wherein titanium Ti and nickel are sticky glutinous metal, and thickness is between 1 ~ 2nm, and the thickness of Al is between 20 ~ 50nm.Adopt Al base reflecting electrode by being of value to compared with the stability at high technology temperature, as the bonding etc. of high temperature, high pressure.Ag base reflecting electrode is to increase reflectivity and stability.The metal of transition zone is nickel, platinum or palladium etc., and thickness is between 20 ~ 50nm.
In step 6) in, bond wire is AgCuIn alloy, in order to ensure the uniformity of AgCuIn alloy compositions, have employed following steps: a) with the AgCuIn alloy of speed evaporation a layer thickness between 400 ~ 500nm of constant 0.4 ~ 0.5nm/s; B) with the speed of the constant 8 ~ 12nm/s AgCuIn alloy of evaporation a layer thickness between 500 ~ 1000nm again; C) behind 1 ~ 5min interval, step b is repeated).After completing the evaporation of AgCuIn alloy, adopt the annealing of 20 ~ 30min under 200 ~ 300 DEG C of blanket of nitrogen, ensure that alloy compositions is even.The thickness of AgCuIn alloy, between 1.5 ~ 2 μm, can ensure that bonding metal layer stands the chip technology temperature of more than 500 DEG C.
In step 7) in, translate substrate adopts semiconductor wafer or metal.Translate substrate comprises Semiconductor substrate and p-electrode layer, at its front deposition bond wire.Bonding process generally substep carries out, and concrete steps comprise: a) boost between 800 ~ 1000kgf/wafer, and temperature rises between 80 ~ 120 DEG C, and the retention time is between 1 ~ 3min; B) boost between 4000 ~ 5000kgf/wafer, temperature rises between 200 ~ 300 DEG C, and the retention time is between 1 ~ 3min; C) keep pressure constant, temperature rises between 300 ~ 500 DEG C, and the retention time is between 10 ~ 30min; D) keep pressure constant, temperature is down between 200 ~ 300 DEG C, and the retention time is between 1 ~ 3min; E) keep pressure constant, temperature is down between 80 ~ 120 DEG C, and the retention time is between 1 ~ 3min; F) temperature is down to room temperature, and pressure unloads completely.
In step 8) in, the LED epitaxial loayer after para-linkage carries out laser lift-off, removes growth substrates.The translate substrate of bonding adopts metal structure, will greatly reduce the damage that in LED epitaxial loayer, residual stress causes.The surface of peeling off the rear non-doped gan layer exposed is carried out to the cleaning of watery hydrochloric acid, the Ga getting rid of surface drips.
In step 9) in, adopt wet etching or the non-doped gan layer in ICP etching+wet etching nitrogen face (about 1 ~ 2 μm).Wet etching adopts the hot phosphoric acid of 100 ~ 160 DEG C, more than the width to 20 of expansion of laser light road plan μm, obtains more smooth surface, nitrogen face.The condition of control ICP etching and phosphoric acid corrosion, the residual stress effectively in release chip.
In step 10) in, the metal of evaporating n electrode, adopts metal structure, Pd/In/Ni/Au structure or the Cr/Pt/Au structure of palladium Pd, indium In, nickel and golden Au.
In step 11) in, by the hot phosphoric acid alligatoring of exiting surface, or the n face using the method for nano impression and etching to obtain surface micronano goes out light cone.Surface adopts hot phosphoric acid alligatoring, and can obtain 12 pyramidal structures of more exiting surfaces, the inclination angle of simultaneously corroding side can regulate according to the temperature of solution and concentration.
In step 12) in, according to semiconductor Si, GaAs substrate as translate substrate, common laser scribing can meet the demands, and for the scribing of the translate substrate of Cu base, picosecond laser need be adopted to do scribing segmentation.
For inverted structure LED chip, the preparation method of the membrane structure LED chip based on silver-base metal bonding of the present invention is as follows:
1) growth substrates of applicable laser lift-off is provided, and in growth substrates, grows LED epitaxial loayer, from growth substrates upwards, comprise n-contact layer, Multiple Quantum Well and P type contact layer successively;
2) adopt laser scribing that LED epitaxial loayer is separated into individual dice;
3) inductively coupled plasma ICP lithographic method is utilized, in each die surfaces etched portions P type contact layer to exposing n-contact layer, formation etching aisle around each tube core simultaneously;
4) in the n-contact layer exposed, n-electrode is prepared;
5) in P type contact layer, p-electrode is prepared;
6) in p-electrode, reflector is prepared further;
7) deposition forms passivation layer, and passivation layer parcel etching aisle, and isolated n-electrode and p-electrode, prevent electric leakage;
8) at the surface in reflector and the surface evaporation bond wire respectively of translate substrate, the material of bond wire adopts AgCuIn alloy, and then para-linkage metal carries out thermal annealing;
9) by evaporation, the translate substrate of bond wire is anchored on the LED epitaxial loayer to be formed in growth substrates, at high temperature under high pressure, translate substrate and LED epitaxial loayer are bonded together, the bond wire on transition zone and the bond wire in translate substrate are fused into one deck bonding metal layer;
10) laser-stripping method is utilized to remove growth substrates, the surface of the LED epitaxial loayer of clean stripping;
11) roughening treatment is carried out to the LED epi-layer surface after laser lift-off, form n face and go out light cone;
12) with machinery or laser cutting LED epitaxial loayer, test and sort obtaining LED chip unit.
Wherein, in step 8) in, bond wire is AgCuIn alloy, in order to ensure the uniformity of AgCuIn alloy compositions, have employed following steps: a) with the AgCuIn alloy of speed evaporation a layer thickness between 400 ~ 500nm of constant 0.4 ~ 0.5nm/s; B) with the speed of the constant 8 ~ 12nm/s AgCuIn alloy of evaporation a layer thickness between 500 ~ 1000nm again; C) behind 1 ~ 5min interval, step b is repeated).After completing the evaporation of AgCuIn alloy, adopt the annealing of 20 ~ 30min under 200 ~ 300 DEG C of blanket of nitrogen, ensure that alloy compositions is even.The thickness of AgCuIn is 1.5 ~ 2 μm, can ensure that bonding metal layer stands the chip technology temperature of more than 500 DEG C.
In step 9) in, translate substrate adopts semiconductor wafer or metal.Translate substrate comprises Semiconductor substrate and p-electrode layer, at its front deposition bond wire.Bonding process generally substep carries out, and concrete steps comprise: a) boost between 800 ~ 1000kgf/wafer, and temperature rises between 80 ~ 120 DEG C, and the retention time is between 1 ~ 3min; B) boost between 4000 ~ 5000kgf/wafer, temperature rises between 200 ~ 300 DEG C, and the retention time is between 1 ~ 3min; C) keep pressure constant, temperature rises between 300 ~ 500 DEG C, and the retention time is between 10 ~ 30min; D) keep pressure constant, temperature is down between 200 ~ 300 DEG C, and the retention time is between 1 ~ 3min; E) keep pressure constant, temperature is down between 80 ~ 120 DEG C, and the retention time is between 1 ~ 3min; F) temperature is down to room temperature, and pressure unloads completely.
Present invention employs AgCuIn alloy as bonding metal layer complete vertical structure LED preparation in bonding technology, achieve stable mechanical strength, bonding temperature and retention time comparatively Au-Au be bonded with certain reduction, with AuSn Bonded Phase ratio, eliminate the cavitation of bonding metal layer, be conducive to the Stress Release in LED epitaxial loayer; Further, adopt AgCuIn as bond wire, greatly reduce the manufacturing cost of light emitting diode (LED) chip with vertical structure, be conducive to the marketing development of light emitting diode (LED) chip with vertical structure.
Advantage of the present invention:
1) AgCuIn bonding can complete under lower bonding temperature and bonding pressure, and bonding time shortens, and is conducive to reducing bonding process to the damage of the photoelectric properties of LED epitaxial loayer;
2) adopt the bonding metal layer of AgCuIn alloy, eliminate the cavitation in bonding process, be conducive to the Stress Release to LED epitaxial loayer;
3) AgCuIn bonding mechanical performance is high, has good conduction and heat conductivility, is conducive to the life-span of improving LED chip;
4) AgCuIn alloy low price, with Au-Au Bonded Phase ratio, greatly reduces the manufacturing cost of light emitting diode (LED) chip with vertical structure, is conducive to the marketing development of light emitting diode (LED) chip with vertical structure.
Accompanying drawing explanation
Fig. 1 is the structural representation of an embodiment of the membrane structure LED chip based on silver-base metal bonding of the present invention, and wherein, (a) is profile, and (b) is vertical view;
Fig. 2 is the schematic diagram of the LED epitaxial loayer of an embodiment of the membrane structure LED chip based on silver-base metal bonding of the present invention;
Fig. 3 is the laser scribing division of one embodiment of the present of invention and the effect schematic diagram of chemical wet etching LED chip unit, and wherein, (a) is profile, and (b) is vertical view;
Fig. 4 is the side wall passivation design sketch of an embodiment of the membrane structure LED chip based on silver-base metal bonding of the present invention, and wherein, (a) is the design sketch forming passivation material, and (b) is the design sketch after forming passivation layer;
Fig. 5 be an embodiment of the membrane structure LED chip based on silver-base metal bonding of the present invention at the surperficial evaporation reflector of p-electrode and the profile of transition zone;
Fig. 6 is the AgCuIn bonding process schematic diagram of an embodiment of the membrane structure LED chip based on silver-base metal bonding of the present invention;
Fig. 7 is the laser lift-off schematic diagram of an embodiment of the membrane structure LED chip based on silver-base metal bonding of the present invention.
Embodiment
Below in conjunction with accompanying drawing, for the LED chip of vertical stratification, the present invention will be further described.
As shown in Figure 1, the membrane structure LED chip unit of the vertical stratification of the present embodiment comprises: translate substrate 0, bonding metal layer 1, transition zone 2, reflector 3, p-electrode 4, LED epitaxial loayer 5, n-electrode 6, n face go out light cone 7 and passivation layer 8; Wherein, translate substrate 0 is followed successively by bonding metal layer 1, transition zone 2, reflector 3, p-electrode 4 and LED epitaxial loayer 5 from bottom to up; The sub-fraction of LED epitaxial loayer forms n-electrode 6; Part on the surface of LED epitaxial loayer except n-electrode forms n face and goes out light cone 7; Reflector 3 and n face go out light cone structure 7 one-tenth light emitting structures; The sidewall in the laser road plan between LED chip unit and etching aisle fills passivation material, forms passivation layer 8.In the present embodiment, insulating layer material adopts SiO
2.In bonding metal layer 1, the component of the component of Ag to be the component of 40%, Cu be 50%, In is 10%.
As shown in Fig. 1 (b), the figure of n-electrode 6 comprises: annulus, two rectangular and two circles; Wherein, two rectangular intersects at circle Ring current distribution, is respectively equipped with a circle, as n-electrode contact point two rectangular one end.
For translate substrate 0, translate substrate comprises Semiconductor substrate and p-electrode layer, and Semiconductor substrate adopts WCu structure, also can adopt the replacements such as Si.Translate substrate is bonded together by AgCuIn bonding metal layer and LED epitaxial loayer.
Above planar structure is of a size of 1.1mm, is the representative value of large scale LED chip, and to arbitrary dimension chip, its size can change within the scope of 0.2 ~ 5mm, and the size of chip part also can change in proportion in proper range.
The preparation method of the present embodiment specifically comprises the following steps:
1) provide thickness to be about the Sapphire Substrate 01 of 400 μm as growth substrates, the non-doped gan layer 02 that first growth thickness is about 2 μm, then grow total thickness at the LED epitaxial loayer of 30 μm, comprising: heavily doped n-contact layer 51, doping content is about 10
19cm
-3n face GaN ohmic contact is formed, its thickness about 2 μm to facilitate; Thicker current extending is conducive to the crystal mass improving quantum well in the mode of accurate extension; N-layer 52, concentration is generally 10
18cm
-3, thickness about 2 μm, thickness about tens nanometer of Multiple Quantum Well 53, the thickness of p-type layer 54 about 200nm and P type contact layer 55 is about 5nm, and P type contact layer adopts InGaN, to be conducive to forming ohmic contact with ITO, as shown in Figure 2.
2) on LED epitaxial loayer, adopt laser scribing, LED epitaxial loayer is divided into isolated area, adopt the sidewall damage that wet etching removal laser causes, form laser road plan 08, laser scribing penetrates LED epitaxial loayer to Sapphire Substrate 01.
3) PECVD is adopted to deposit the SiO of 300nm
2film is as mask layer, and adopting photoetching method, take photoresist as mask, adopts the method for ICP etching, is etched to n-layer 51, forms etching aisle 03, obtains LED chip unit, then remove photoresist, remove SiO
2, as shown in Figure 3.The wet etching condition adopted is the mixed acid of phosphoric acid and sulfuric acid, and corrosion temperature is between 200 ~ 250 DEG C, and etching time is about 15min, sidewall corrosion cone about 2 μm.
4) on LED epitaxial loayer, PECVD grows the SiO that a layer thickness is about 300 ~ 500nm
2passivation material; as shown in Fig. 4 (a); remove the passivation material on P type contact layer surface in photoetching after; in the edge of P type contact layer; in distance 10 μm, edge, some passivation material retains; form passivation layer 8, as shown in Fig. 4 (b), better to realize sidewall protection.
5) at LED epitaxial loayer evaporation ITO transparent conductive electrode as p-electrode 4, thickness is 230nm, then at surperficial evaporation reflector 3 and the transition zone 2 of p-electrode, as shown in Figure 5.
6) the AgCuIn alloy of the surface of the LED epitaxial loayer in translate substrate 0 and evaporation p-electrode and reflector simultaneously evaporation thickness about 2 μm, the metal of electron beam evaporation plating is AgCuIn ternary alloy three-partalloy solder, and the evaporation condition of AgCuIn alloy is as follows: a) with the AgCuIn alloy that the speed evaporation 500nm of 0.5nm/s is thick; B) with the speed of the 10nm/s AgCuIn alloy that evaporation 750nm is thick again; C) behind the interval of 3 minutes, step b is repeated).Then at the N of 300 DEG C
2anneal under atmosphere 30min, ensures that alloy compositions is even.
7) translate substrate and LED epitaxial loayer are bonded together, as shown in Figure 6.The step that bonding adopts is: a) boost to 800kg, and temperature rises to 80 DEG C, retention time 3min; B) boost to 4000kg, temperature rises to 300 DEG C, retention time 3min; C) keep pressure, be warming up to 380 DEG C, keep 30min; D) keep pressure, be cooled to 300 DEG C, keep 3min; E) keep pressure, be cooled to 80 DEG C, keep 3min; F) temperature is down to room temperature, and pressure unloads completely.
8) carry out laser lift-off, laser is incident from Sapphire Substrate 01, Sapphire Substrate 01 is peeled off, as shown in Figure 7, and exposes non-doped gan layer.
9) utilize ICP to etch away non-doped gan layer, and expose heavily doped n-contact layer, utilize the method for corrosion to carry out removing surface to heavily doped n-contact layer and expand laser road plan is expanded afterwards, realize stress to a certain extent and regulate.
10) n-electrode 6 is deposited.
11) light cone 7 is gone out in the surface of n-contact layer formation cycle or aperiodic n face.
12) along etching aisle machinery or laser cutting LED epitaxial loayer, test, sorting obtain LED chip unit, as shown in Figure 1.
It is finally noted that, the object publicizing and implementing mode is to help to understand the present invention further, but it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various substitutions and modifications are all possible.Therefore, the present invention should not be limited to the content disclosed in embodiment, and the scope that the scope of protection of present invention defines with claims is as the criterion.
Claims (10)
1. the membrane structure LED chip based on silver-base metal bonding, it is characterized in that, for light emitting diode with vertical structure LED chip, described LED chip unit comprises: translate substrate, bonding metal layer, transition zone, reflector, p-electrode, LED epitaxial loayer, n-electrode, n face go out light cone and passivation layer; Wherein, described translate substrate is followed successively by bonding metal layer, transition zone, reflector, p-electrode and LED epitaxial loayer from bottom to up; The sub-fraction of LED epitaxial loayer forms n-electrode; Part on the surface of LED epitaxial loayer except n-electrode forms n face and goes out light cone; Described reflector and n face go out light cone and form light emitting structures; Laser road plan between chip unit forms passivation layer with the sidewall in etching aisle; Described bonding metal layer adopts AgCuIn alloy.
2. based on a membrane structure LED chip for silver-base metal bonding, it is characterized in that, for inverted structure LED chip, described LED chip unit comprises: LED epitaxial loayer, n-electrode, p-electrode, reflector, bonding metal layer, passivation layer and translate substrate; Wherein, LED epitaxial loayer supremely comprises n-contact layer, multiquantum well region and P type contact layer successively from little; Utilize the method for etching to expose a part of n-contact layer, the n-contact layer exposed prepares n-electrode; P type contact layer prepares p-electrode, p-electrode prepares reflector; Around the sidewall that passivation layer is wrapped in LED epitaxial loayer and n-electrode; Reflector deposits bonding metal layer; LED epitaxial loayer and translate substrate are bonded together by described bonding metal layer.
3. LED chip as claimed in claim 1 or 2, is characterized in that, in the AgCuIn alloy that described bonding metal layer adopts, the component of Ag is between 40 ~ 50%, and the component of Cu is between 40 ~ 50%, and the component of In is between 10 ~ 20%.
4. based on a preparation method for the membrane structure LED chip unit of silver-base metal bonding, it is characterized in that, for light emitting diode (LED) chip with vertical structure, described preparation method comprises the following steps:
1) growth substrates of applicable laser lift-off is provided, growth substrates grows non-doped gan layer, growing n-type contact layer, n-layer, Multiple Quantum Well, p-type layer and P type contact layer successively in non-doped gan layer, form LED epitaxial loayer;
2) on LED epitaxial loayer, adopt laser scribing to mark off the LED chip unit of separation, deeply to growth substrates, form laser road plan, laser road plan is cleaned, remove the residue in sidewall damage district and laser road plan;
3) on LED epitaxial loayer, grow one deck mask layer, mask layer etches LED chip unit, is etched to n-layer, form etching aisle, remove mask layer and expose P type contact layer, remove etching injury further, then remove mask layer;
4) regrowth passivation material on LED epitaxial loayer, adopts the method for photoetching prepare figure and carry out wet etching, removes the passivation material on P type contact layer surface, retains laser road plan and the passivation material of etching aisle sidewall, forms passivation layer;
5) evaporation p-electrode on the surface of P type contact layer, then at surperficial evaporation reflector and the transition zone of p-electrode;
6) adopt the mode of electron beam evaporation, at the surface evaporation bond wire simultaneously of transition zone and translate substrate, the material of bond wire adopts AgCuIn alloy, and then para-linkage metal carries out thermal annealing;
7) by evaporation, the translate substrate of bond wire is anchored on the LED epitaxial loayer to be formed in growth substrates, at high temperature under high pressure, translate substrate and LED epitaxial loayer are bonded together, the bond wire on transition zone and the bond wire in translate substrate are fused into one deck bonding metal layer;
8) utilize laser-stripping method to remove growth substrates, and expose non-doped gan layer, the surface of the LED epitaxial loayer of clean stripping;
9) carry out wet method and dry etching, remove non-doped gan layer, expose n-contact layer, and laser road plan is expanded to some extent, release portion residual stress;
10) metal of evaporating n electrode, adopt stripping means to remove part metals, expose most n-contact layer, form n-electrode, annealing obtains stable ohmic contact;
11) carry out the passivation protection of electrode and sidewall, the surface of alligatoring n-contact layer, formation cycle or aperiodic n face go out light cone, thus are formed and comprise the light emitting structures that reflector and n face go out light cone;
12) with machinery or laser cutting LED epitaxial loayer, test and sort obtaining LED chip unit.
5. preparation method as claimed in claim 4, it is characterized in that, in step 6) in, bond wire is AgCuIn alloy, and evaporate process comprises the following steps: a) with the AgCuIn alloy of speed evaporation a layer thickness between 400 ~ 500nm of constant 0.4 ~ 0.5nm/s; B) with the speed of the constant 8 ~ 12nm/s AgCuIn alloy of evaporation a layer thickness between 500 ~ 1000nm again; C) behind 1 ~ 5min interval, step b is repeated).
6. preparation method as claimed in claim 4, is characterized in that, in step 6) in, after completing the evaporation of AgCuIn alloy, adopt the annealing of 20 ~ 30min under 200 ~ 300 DEG C of blanket of nitrogen.
7. preparation method as claimed in claim 4, is characterized in that, in step 7) in, bonding process comprises: a) boost between 800 ~ 1000kgf/wafer, and temperature rises between 80 ~ 120 DEG C, and the retention time is between 1 ~ 3min; B) boost between 4000 ~ 5000kgf/wafer, temperature rises between 200 ~ 300 DEG C, and the retention time is between 1 ~ 3min; C) keep pressure constant, temperature rises between 300 ~ 500 DEG C, and the retention time is between 10 ~ 30min; D) keep pressure constant, temperature is down between 200 ~ 300 DEG C, and the retention time is between 1 ~ 3min; E) keep pressure constant, temperature is down between 80 ~ 120 DEG C, and the retention time is between 1 ~ 3min; F) temperature is down to room temperature, and pressure unloads completely.
8. based on a preparation method for the membrane structure LED chip unit of silver-base metal bonding, it is characterized in that, for inverted structure LED chip, described preparation method comprises the following steps:
1) growth substrates of applicable laser lift-off is provided, and in growth substrates, grows LED epitaxial loayer, from growth substrates upwards, comprise n-contact layer, Multiple Quantum Well and P type contact layer successively;
2) adopt laser scribing that LED epitaxial loayer is separated into individual dice;
3) inductively coupled plasma ICP lithographic method is utilized, in each die surfaces etched portions P type contact layer to exposing n-contact layer, formation etching aisle around each tube core simultaneously;
4) in the n-contact layer exposed, n-electrode is prepared;
5) in P type contact layer, p-electrode is prepared;
6) in p-electrode, reflector is prepared further;
7) deposition forms passivation layer, passivation layer parcel etching aisle, and isolated n-electrode and p-electrode;
8) at the surface in reflector and the surface evaporation bond wire respectively of translate substrate, the material of bond wire adopts AgCuIn alloy, and then para-linkage metal carries out thermal annealing;
9) by evaporation, the translate substrate of bond wire is anchored on the LED epitaxial loayer to be formed in growth substrates, at high temperature under high pressure, translate substrate and LED epitaxial loayer are bonded together, the bond wire on transition zone and the bond wire in translate substrate are fused into one deck bonding metal layer;
10) laser-stripping method is utilized to remove growth substrates, the surface of the LED epitaxial loayer of clean stripping;
11) roughening treatment is carried out to the LED epi-layer surface after laser lift-off, form n face and go out light cone;
12) with machinery or laser cutting LED epitaxial loayer, test and sort obtaining LED chip unit.
9. preparation method as claimed in claim 8, it is characterized in that, in step 8) in, bond wire is AgCuIn alloy, and evaporate process comprises the following steps: a) with the AgCuIn alloy of speed evaporation a layer thickness between 400 ~ 500nm of constant 0.4 ~ 0.5nm/s; B) with the speed of the constant 8 ~ 12nm/s AgCuIn alloy of evaporation a layer thickness between 500 ~ 1000nm again; C) behind 1 ~ 5min interval, step b is repeated).
10. preparation method as claimed in claim 8, is characterized in that, in step 9) in, bonding process comprises: a) boost between 800 ~ 1000kgf/wafer, and temperature rises between 80 ~ 120 DEG C, and the retention time is between 1 ~ 3min; B) boost between 4000 ~ 5000kgf/wafer, temperature rises between 200 ~ 300 DEG C, and the retention time is between 1 ~ 3min; C) keep pressure constant, temperature rises between 300 ~ 500 DEG C, and the retention time is between 10 ~ 30min; D) keep pressure constant, temperature is down between 200 ~ 300 DEG C, and the retention time is between 1 ~ 3min; E) keep pressure constant, temperature is down between 80 ~ 120 DEG C, and the retention time is between 1 ~ 3min; F) temperature is down to room temperature, and pressure unloads completely.
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