CN104638081A - Silicon-based GaN luminescent device based on crystalline silicon photovoltaic technology and preparation method of silicon-based GaN luminescent device - Google Patents
Silicon-based GaN luminescent device based on crystalline silicon photovoltaic technology and preparation method of silicon-based GaN luminescent device Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 36
- 239000010703 silicon Substances 0.000 title claims abstract description 36
- 238000013082 photovoltaic technology Methods 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title claims description 13
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 230000003139 buffering effect Effects 0.000 claims abstract description 16
- 238000009826 distribution Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 239000013078 crystal Substances 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 2
- 210000002268 wool Anatomy 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000035800 maturation Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000017105 transposition Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000005699 Stark effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a silicon-based GaN luminescent device based on a crystalline silicon photovoltaic technology. The silicon-based GaN luminescent device comprises a substrate for N-type or P-type silicon (100), a randomly distributed forward pyramid structure manufactured on the substrate, a buffering reflection layer which is manufactured on the surface of the forward pyramid structure and is made of high-temperature AlN or low-temperature AlN, a luminous layer which is manufactured on the buffering reflection layer, a transparent conductive oxide layer which is manufactured on the luminous layer, an upper electrode layer which is manufactured on the transparent conductive oxide layer and is in meshed distribution, and a lower electrode layer manufactured on the back surface of the substrate, wherein the surface of the luminous layer is parallel to the surface of the forward pyramid structure or parallel to the surface of the substrate; the surface of the transparent conductive oxide layer is a plane. According to the silicon-based GaN luminescent device, stress on an epitaxial material can be effectively released, so that high-quality luminous LED (light emitting diode) which is provided with epitaxial GaN and is low in manufacturing cost and high in efficiency can be obtained.
Description
Technical field
The invention belongs to field of semiconductor device preparation, particularly a kind of silica-based GaN luminescent device based on crystal silicon photovoltaic technology and preparation method.
Background technology
In recent years, the third generation semi-conducting material being representative with I work machine fluid nitride and photoelectric functional device thereof demonstrate more and more important leading role at key areas such as energy-conserving and environment-protective, are the key and the basis that support emerging strategic industries of future generation development.
Group III-nitride series material utilizes crucial field of photoelectric devices to demonstrate huge advantage in semiconductor lighting high efficient energy sources, but efficient I work machine fluid nitride optoelectronic devices sizable application is faced with low cost backing material, substrate technology, high-quality material extension controllable growth all the time and how reduces the crucial science and technology problems such as device making technics cost.Therefore, seek to explore novel dimensional electron epitaxial substrate material and progress, to its performance improvement and sizable application, there is decisive meaning.
Owing to being difficult to obtain large-sized GaN body monocrystal material, up to the present, high-quality GaN material is generally all obtained by foreign substrate epitaxy method.High-quality epitaxial film generally need substrate meet lattice constant match, matched coefficients of thermal expansion, can the principle such as large scale and affordable.Commercial LED has three technology paths, i.e. Sapphire Substrate technology path, SiC substrate technology path and Si substrate technology route according to substrate division at present.Silicon substrate technology path is owing to having the plurality of advantages such as technical maturity, low cost and large scale, and some international expert is even asserted, silicon substrate LED technology path is exactly the ultimate technology path that future semiconductor illumination chip is produced.But the quality of Si substrate growth GaN monocrystal thin films can not show a candle to Sapphire Substrate at present, subject matter be Si and GaN up to 114% thermal mismatching, far away higher than sapphire (about-25.5%), tensile stress huge in epitaxial film and the be full of cracks of epitaxial film can be caused like this.
Monocrystalline substrate conventional in crystal silicon solar batteries is Si (100) substrate, utilizes wet etching to go out inverted pyramid, just pyramidal technology is very ripe at silicon face.The wet etch techniques that we plan this maturation is applied on Si (100) substrate epitaxial high-quality GaN, thus obtains light-emitting diode that is efficient, low cost.
Summary of the invention
The object of the present invention is to provide a kind of silica-based GaN luminescent device based on crystal silicon photovoltaic technology and preparation method, its be adopt the method for wet etching generally to use in solar battery process Si (100) substrate on erode away the positive pyramid pattern of random distribution, can effectively discharge epitaxial material stress, thus obtain high-quality extension GaN, manufacture low cost, emitting led efficiently.
The invention provides a kind of silica-based GaN luminescent device based on crystal silicon photovoltaic technology, comprising:
The substrate of one N-type or P-type silicon (100);
The positive pyramid structure of one random distribution, it is produced on substrate;
One buffering reflector, it is produced on the surface of positive pyramid structure, and the material in this buffering reflector is high-temperature AlN or low temperature AI N;
One luminescent layer, it is produced on buffering reflector, and the surface of this luminescent layer is parallel to positive pyramid structure surface, or is parallel to the surface of substrate;
One including transparent conducting oxide layer, it is produced on luminescent layer, and the surface of this including transparent conducting oxide layer is a plane;
One upper electrode layer, it is produced on including transparent conducting oxide layer, and this upper electrode layer is net distribution;
One lower electrode layer, it is produced on the back side of substrate.
The beneficial effect that the present invention has is:
In conjunction with the process for etching of crystal silicon solar batteries maturation, utilize in technique and generally make
Si (100) substrate, significantly can reduce the cost of GaN base LED.
(2) work simplification, Si substrate graphical without the need to steps such as photoetching, reduce further production cost.
(3) just pyramidal average-size is adjustable, greatly can to tens microns, and little of hundreds of nanometer, the stress that lattice mismatch (16.9%) and the thermal mismatching (56%) of epitaxial wafer and substrate produce is discharged, and improves film quality.
(4) pyramid below micron order has nanometer size effect, and surface forms graded index, reduces total reflection, is conducive to bright dipping.
(5) utilize horizontal extension to produce the epitaxial loayer being parallel to Si (100) surface, what obtain is semi-polarity face or non-polar plane, the impact that the electronics that reduction or elimination quantum Stark effect cause is separated with hole, thus improves luminous efficiency.
(6) the positive pyramid of Arbitrary distribution effectively improves light-emitting area.
Accompanying drawing explanation
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in detail furtherly, wherein:
Fig. 1 is the structural representation of first embodiment of the invention;
Fig. 2 is the structural representation of second embodiment of the invention;
Fig. 3 is preparation flow figure of the present invention.
Embodiment
Refer to shown in Fig. 1 and Fig. 2, the invention provides a kind of silica-based GaN luminescent device based on crystal silicon photovoltaic technology, comprising:
The substrate 10 of one N-type or P-type silicon (100);
The positive pyramid structure 11 of one random distribution, it makes over the substrate 10, described positive pyramid structure 11 is scattered or be paved with and be distributed on substrate 10 at random, and its peak value or width size are from tens microns to hundreds of nanometer, and the side of this positive pyramid structure 11 is silicon (111) faces;
One buffering reflector 12, it is produced on the surface of positive pyramid structure 11, and the material in this buffering reflector 12 is high-temperature AlN, low temperature AI N, and during deposit AlN material, pre-deposited one deck Al atom prevents the nitrogenize of silicon substrate or direct deposit AlN;
One luminescent layer 13, it is produced on buffering reflector 12, the surface of this luminescent layer 13 is parallel to positive pyramid structure 11 surface (in Fig. 1), or be parallel to the surface (in Fig. 2) of substrate 10, luminescent layer is made up of n-GaN, single or multiple quantum well, p-GaN, and n-GaN and p-GaN can transposition.Described quantum well layer comprises and being made up of the Material selec-tion in InN, InGaN, GaN, InAlN, AlInGaN, AlGaN and InGaAlP.
One including transparent conducting oxide layer 14, it is produced on luminescent layer 13, and the surface of this including transparent conducting oxide layer 14 is a plane, and the thickness of described including transparent conducting oxide layer 14 is tens nanometers to tens micron;
One upper electrode layer 15, it is produced on including transparent conducting oxide layer 14, and this upper electrode layer 15 is net distribution;
One lower electrode layer 16, it is produced on the back side of substrate 10.
Refer to Fig. 3, and combination is consulted shown in Fig. 1 and Fig. 2, the invention provides a kind of preparation method of the silica-based GaN luminescent device based on crystal silicon photovoltaic technology, comprises the following steps:
Step 1: standard RCA clean is carried out to the substrate 10 of N-type or P-type silicon (100);
Step 2: adopt crystal silicon solar batteries making herbs into wool technology, adopt TMAH solution or KOH, positive pyramid structure 11 that NaOH solution erodes away random distribution over the substrate 10, described positive pyramid structure 11 is scattered or be paved with and be distributed on substrate 10 at random, its peak value or width size are from tens microns to hundreds of nanometer, by regulating the concentration of corrosive liquid, etching time and corrosion temperature can regulate just pyramidal average-size, this pyramidal side is silicon (111) face;
Step 3: utilize MOCVD or MBE to deposit one deck low temperature AI N or high-temperature AlN buffering reflector 12 in positive pyramid structure 11, this buffering reflector is as the nucleating layer of subsequent growth GaN, and the light that can also send as reflective layer reflects luminescent layer 13 makes more light penetrate from front; This AlN layer adopts Si doping provide electric conductivity or undope;
Step 4: utilize MBE or MOCVD method depositing light emitting layer 13. luminescent layer 13 can be parallel to just pyramidal surface and silicon (111) plane distribution on buffering reflector 12, thus exiting surface is parallel to Si (111) face (consulting Fig. 1), realize many lateral emittings, light-emitting area improves 1.5 times; This luminescent layer also can be parallel to substrate 10 surface (consulting Fig. 2), namely Si (100) face, thus obtains nonpolar or semi-polar GaN surface.Emission layer is made up of n-GaN, single or multiple quantum well, p-GaN, and n-GaN and p-GaN can transposition.Described quantum well layer comprises and being made up of the Material selec-tion in InN, InGaN, GaN, InAlN, AlInGaN, AlGaN and InGaAlP.
Step 5: evaporation including transparent conducting oxide layer 14 on luminescent layer 13, the thickness of described including transparent conducting oxide layer 14 is tens nanometers to tens micron, this transparent conductive oxide can play the effect of printing opacity, and can current convergence be made in electrode by collected current; On transparent conductive oxide 14, carry out photoetching, photoengraving pattern is netted;
Step 6: the upper metal electrode 15 utilizing the method deposit net distribution of evaporation after photoetching on transparent conductive oxide 14, metal system is the metal system that Cr/Al/Ti/Cu or other combined efficiencies are higher, and each layer metal thickness is tens nanometers between tens microns;
Step 7: utilize TMAH solution or KOH, NaOH solution etching away substrate 10, or do not remove substrate 10, forms substrate;
Step 8: metal electrode 16 under back side evaporation one deck of substrate, backplate utilizes vapour deposition method to form ohmic contact overleaf, and electrode is enough thick, can support whole device, and the effect that also can play increases reflection makes most light penetrate from front, completes preparation.
Above-described specific embodiment; further detailed description has been carried out to object of the present invention, technical scheme and beneficial effect; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1., based on a silica-based GaN luminescent device for crystal silicon photovoltaic technology, comprising:
The substrate of one N-type or P-type silicon (100);
The positive pyramid structure of one random distribution, it is produced on substrate;
One buffering reflector, it is produced on the surface of positive pyramid structure, and the material in this buffering reflector is high-temperature AlN or low temperature AI N;
One luminescent layer, it is produced on buffering reflector, and the surface of this luminescent layer is parallel to positive pyramid structure surface, or is parallel to the surface of substrate;
One including transparent conducting oxide layer, it is produced on luminescent layer, and the surface of this including transparent conducting oxide layer is a plane;
One upper electrode layer, it is produced on including transparent conducting oxide layer, and this upper electrode layer is net distribution;
One lower electrode layer, it is produced on the back side of substrate.
2. the silica-based GaN luminescent device based on crystal silicon photovoltaic technology according to claim 1, wherein said positive pyramid structure is scattered or be paved with and be distributed on substrate at random, and its peak value or width size are from tens microns to hundreds of nanometer.
3. the silica-based GaN luminescent device based on crystal silicon photovoltaic technology according to claim 1, wherein said luminescent layer comprises n-GaN, quantum well and p-GaN.
4. the silica-based GaN luminescent device based on crystal silicon photovoltaic technology according to claim 1, the thickness of wherein said including transparent conducting oxide layer is tens nanometers to tens micron.
5., based on a preparation method for the silica-based GaN luminescent device of crystal silicon photovoltaic technology, comprise the following steps:
Step 1: standard RCA clean is carried out to the substrate of N-type or P-type silicon (100);
Step 2: adopt crystal silicon photovoltaic making herbs into wool technology, substrate erodes away the positive pyramid structure of random distribution;
Step 3: deposit one deck low temperature AI N or high-temperature AlN buffering reflector in positive pyramid structure;
Step 4: depositing light emitting layer on buffering reflector, the surface of this luminescent layer is parallel to positive pyramid structure surface, or is parallel to the surface of substrate;
Step 5: evaporation including transparent conducting oxide layer on luminescent layer, carries out photoetching;
Step 6: metal electrode in evaporation net distribution on transparent conductive oxide;
Step 7: remove substrate or do not remove substrate, forms substrate;
Step 8: metal electrode completes preparation under back side evaporation one deck of substrate.
6. the preparation method of the silica-based GaN luminescent device based on crystal silicon photovoltaic technology according to claim 5, wherein said positive pyramid structure is scattered or be paved with and be distributed on substrate at random, and its peak value or width size are from tens microns to hundreds of nanometer.
7. the preparation method of the silica-based GaN luminescent device based on crystal silicon photovoltaic technology according to claim 5, wherein said luminescent layer comprises n-GaN, quantum well and p-GaN.
8. the preparation method of the silica-based GaN luminescent device based on crystal silicon photovoltaic technology according to claim 5, the thickness of wherein said including transparent conducting oxide layer is tens nanometers to tens micron.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140364A (en) * | 2015-07-27 | 2015-12-09 | 中国科学院半导体研究所 | GaN light-emitting device and fabrication method thereof |
| CN106558637A (en) * | 2016-11-16 | 2017-04-05 | 中国科学院半导体研究所 | On-plane surface silicon substrate LED device and preparation method thereof |
| CN108011000A (en) * | 2017-11-30 | 2018-05-08 | 西安交通大学 | Silicon substrate MOS thin film light emitting devices and preparation method thereof and full spectrum thin film light emitting device |
| CN108400082A (en) * | 2017-02-08 | 2018-08-14 | 英诺赛科（珠海）科技有限公司 | A kind of method, structure and the power device of gallium nitride film growth on a silicon substrate |
| CN108400087A (en) * | 2017-02-08 | 2018-08-14 | 英诺赛科（珠海）科技有限公司 | A kind of method, structure and the power device of gallium nitride film growth on a silicon substrate |
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| CN102130260A (en) * | 2010-09-30 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Luminous device and manufacturing method thereof |
| US20110318860A1 (en) * | 2008-04-16 | 2011-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Group-III Nitride Epitaxial Layer on Silicon Substrate |
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| JP2001284643A (en) * | 2000-03-29 | 2001-10-12 | Showa Denko Kk | Wafer for group iii nitride semiconductor light emitting element, method for manufacturing the same and group iii nitride semiconductor light emitting element |
| US20110318860A1 (en) * | 2008-04-16 | 2011-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Group-III Nitride Epitaxial Layer on Silicon Substrate |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105140364A (en) * | 2015-07-27 | 2015-12-09 | 中国科学院半导体研究所 | GaN light-emitting device and fabrication method thereof |
| CN106558637A (en) * | 2016-11-16 | 2017-04-05 | 中国科学院半导体研究所 | On-plane surface silicon substrate LED device and preparation method thereof |
| CN108400082A (en) * | 2017-02-08 | 2018-08-14 | 英诺赛科（珠海）科技有限公司 | A kind of method, structure and the power device of gallium nitride film growth on a silicon substrate |
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