CN102593719A - Edge-emission semiconductor laser for improving light field distribution of active area - Google Patents
Edge-emission semiconductor laser for improving light field distribution of active area Download PDFInfo
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- CN102593719A CN102593719A CN2012100616989A CN201210061698A CN102593719A CN 102593719 A CN102593719 A CN 102593719A CN 2012100616989 A CN2012100616989 A CN 2012100616989A CN 201210061698 A CN201210061698 A CN 201210061698A CN 102593719 A CN102593719 A CN 102593719A
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Abstract
The invention provides an edge-emission semiconductor laser for improving light field distribution of an active area, belonging to the technical field of a semiconductor photoelectronics. The edge-emission semiconductor laser comprises an epitaxial structure consisting of a substrate, an N-type limiting layer, an N-type waveguide layer, a multi-quantum well active area, a P-type waveguide layer, a P-type limiting layer and a P-type ohm contact layer, and further comprises a silicon dioxide insulating layer, an upper layer P-type electrode and a lower layer N-type electrode simultaneously, wherein grating structures are arranged on a ridge-shaped table, and a photoetching process is used in a manufacturing process; and after a scribing process, a chip is sintered on a copper heat sink and fixedly packaged on a heat radiation base. In the structure provided by the invention, the grating structures at the both sides of the ridge-shaped table are introduced to improve the light field of the active area and restrain the transverse expansion of injection current, so as to reduce threshold current of the semiconductor laser. The edge-emission semiconductor laser provided by the invention has the advantages of simple manufacturing process, low cost and good repeatability.
Description
Technical field
Improve the edge-emission semiconductor laser of active area optical field distribution, belong to field of semiconductor photoelectron technique, relate to a kind of semiconductor laser.
Background technology
Advantages such as semiconductor laser is little, in light weight with its volume, electric light transformation efficiency height, stable performance, reliability height and life-span are long are widely used in key areas such as optical fiber communication, materials processing, disc accessing, optical information processing and medical treatment.And be specially adapted to military fields such as laser night vision, laser fuze, laser radar.Edge-emission semiconductor laser is the important component part of field of semiconductor lasers, and it is directly to utilize the natural cleavage plane of semi-conducting material to do resonant-cavity surface, and technology is simple, crystal face is perfect.Edge-emission semiconductor laser has the following advantages:
1. reduce owing to the active layer lateral dimensions, the light field symmetry increases, thereby can improve the coupling efficiency of light source and optical fiber.
2. because electronics and light field are had restriction, help reducing the threshold current of laser in side direction.
3. because active region area is little, obtain the least possible or flawless active layer of defective easily, except that being used as the cleavage surface of resonant cavity, whole active area is isolated from the outside, and helps improving the stability and the reliability of device simultaneously.
Because the photon energy of edge-emission semiconductor laser mainly concentrates on active area; And constantly expand to both sides; Will cause the leakage of active area light field like this, the optical grating construction in ridged platform both sides can reduce the leakage of light field effectively with a part of light reflected back active area; The optical grating construction of ridged platform both sides can also suppress the extending transversely of injection current effectively simultaneously, thereby threshold property, output mode, the power output of edge-emitting laser all exerted an influence.
The manufacture method that is used to improve the edge-emission semiconductor laser of active area optical field distribution of the present invention is on the basis of traditional edge-emission semiconductor laser technology, to have increased by a step photoetching process, thus its manufacture craft is simple, cost is low, repeated.
Summary of the invention
The objective of the invention is to improve the semiconductor laser active area optical field distribution of limit emission, reduce the light field of active area and reveal, suppress the extending transversely of injection current, thereby reduce the threshold current of laser.
In order to achieve the above object; The invention provides a kind of edge-emission semiconductor laser that improves the active area optical field distribution, it is characterized in that: comprise the epitaxial slice structure that substrate, N type limiting layer, N type ducting layer, MQW active area, P type ducting layer, P type limiting layer, P type ohmic contact layer constitute successively; And utilize wet etching with epitaxial wafer both sides corrosion P type ohmic contact layer to P type limiting layer, depth bounds is: 400nm-600nm, thereby formation ridged platform erode away in ridged platform both sides and to have periodic optical grating construction.
The cycle of this optical grating construction can for: the integral multiple of wavelength adds quarter-wave; Optical grating construction can be effectively with leaking into the outer flash of light preceding an earthquake reflected back active area of active area, thereby improve the optical field distribution of active area; Optical grating construction can also suppress the extending transversely of injection current effectively simultaneously, thereby reduces the threshold current of semiconductor laser.
Can draw from technique scheme, the present invention has following beneficial effect:
1, this edge-emission semiconductor laser that is used to improve the active area optical field distribution provided by the invention has reduced the light field of active area and has revealed; Simultaneously can suppress the extending transversely of injection current, reduce threshold current.
2, this edge-emission semiconductor laser that is used to improve the active area optical field distribution provided by the invention; Its manufacture method has only increased by a step photoetching process on the basis of traditional edge-emission semiconductor laser technology; Compatible fully with existing edge-emission semiconductor laser preparation technology; Preparation technology is simple, and cost is low.
3, this edge-emission semiconductor laser structure that is used to improve the active area optical field distribution provided by the invention is adaptable across the edge-emission semiconductor laser of various materials system.
Description of drawings
Fig. 1: the side direction generalized section of edge-emission semiconductor laser provided by the invention;
Among the figure: 1, MQW active area, 2, P type ducting layer, 3, N type ducting layer, 4, P type limiting layer, 5, N type limiting layer, 6, P type ohmic contact layer, 7, gallium arsenide substrate, 8, silicon dioxide insulating layer, 9, upper strata P type electrode, 10, the N of lower floor type electrode.
Fig. 2: the method flow diagram of making edge-emission semiconductor laser provided by the invention;
Fig. 3: the optical grating construction schematic perspective view that improves the edge-emission semiconductor laser of active area optical field distribution provided by the invention;
Among the figure: 11, MQW active area, 12, P type ducting layer, 13, N type ducting layer, 14, P type limiting layer, 15, N type limiting layer, 16, P type ohmic contact layer, 17, Semiconductor substrate
Fig. 4: the encapsulating structure sketch map that improves the edge-emission semiconductor laser of active area optical field distribution provided by the invention;
Among the figure: 18, copper is heat sink, and 19, potsherd, 20, copper strips, 21, the gold layer on the potsherd, 22, gold thread, 23, semiconductor laser chip, 24, the indium layer.
Embodiment
In order to make the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
Making edge-emission semiconductor laser provided by the invention, adaptable across the edge-emission semiconductor laser that various materials are, the indium gallium arsenic quantum well edge-emission semiconductor laser with 980nm is its principle of example explanation below.
As shown in Figure 1, the structure that present embodiment is a kind of to be used to improve the active area optical field distribution and to suppress injection current edge-emission semiconductor laser extending transversely comprises:
A, substrate 7, this substrate 7 are N type gallium arsenic material, and thickness is about 300-400um, and this substrate 10 is used for carrying out the epitaxial growth of laser layers of material above that;
B, N type limiting layer 5, this N type limiting layer 5 is produced on the substrate 7, and this N type limiting layer 5 is a N type gallium aluminium arsenic material, can effectively limit light field;
C, N type ducting layer 3 and P type ducting layer 2 are formed ducting layer, and this ducting layer is produced on the both sides of quantum well layer 1, in N type limiting layer 5 and the P type limiting layer 4; Its material is low-doped gallium aluminium arsenic material, and al compsn is gradual change, and scope is: 0.05-0.35; After ducting layer adopts the material component gradual change; Its refractive index will diminish, and it is big that the light restriction factor becomes, thereby reduce threshold current;
D, quantum well layer 1, this quantum well layer 1 are produced in N type ducting layer 3 and the P type ducting layer 2, and its material is an indium gallium arsenic material;
E, P type limiting layer 4, this P type limiting layer 4 is produced on the P type ducting layer 2, and its material is a gallium aluminium arsenic material;
F, P type ohmic contact layer 6, its material are the material that can form good Ohmic contact with gallium arsenic material;
Simultaneously; Because the photon energy of edge-emission semiconductor laser mainly concentrates on active area, and constantly expands to both sides, will cause the leakage of active area light field like this; Optical grating construction in ridged platform both sides can reduce the leakage of light field effectively with a part of light reflected back active area; The optical grating construction of ridged platform both sides can also suppress the extending transversely of injection current effectively simultaneously, thereby threshold property, output mode, the power output of edge-emitting laser all exerted an influence.
As shown in Figure 2, Fig. 2 is the method flow diagram of making edge-emission semiconductor laser provided by the invention, and this method may further comprise the steps:
Step 101: on N type gallium arsenic substrate, prepare gallium aluminium arsenic limiting layer, gallium aluminium arsenic light waveguide-layer, indium gallium arsenic mqw active layer successively;
Step 102: on epitaxial wafer, make the ridged platform by lithography;
Step 103: at ridged platform both sides photoetching optical grating construction;
Step 104: deposit electric insulation layer on epitaxial wafer;
Step 105: on electric insulation layer, make fairlead by lithography;
Step 106: on epitaxial wafer, prepare p side electrode;
Step 107: N profile substrate is carried out preparing N face electrode behind the attenuated polishing;
The method flow diagram of the making edge-emission semiconductor laser that provides to the invention described above is below in conjunction with the sketch map of edge-emission semiconductor laser side direction section shown in Figure 1, to further explain of the present invention.
N type substrate described in the above-mentioned steps 101 is (100) face 15 ° of N types of < 111>direction drift angle gallium arsenic substrate 7 partially.Select this substrate for use; Adopt metal-organic chemical vapor deposition equipment in epitaxial growth on the gallium arsenic substrate of N type drift angle light waveguide-layer 2, indium gallium arsenic mqw active layer 1 on light waveguide-layer 3, P type gallium aluminium arsenic upper limiting layer 4, the P type gallium aluminium arsenic under N type gallium aluminium arsenic lower limit layer 5, the N type gallium aluminium arsenic, heavily doped P type gallium arsenic ohmic contact
Layer 6.Select for use inclined to one side 15 ° of N types of < 111>direction drift angle of (100) face gallium arsenic substrate can suppress the formation of metastable state ordered structure in the growth course on the one hand; Can also improve P type magazine doping content in the limiting layer on the other hand, improve effective potential barrier of electronics, suppress the electronics of active area and reveal, help preparing high power semiconductor lasers.
Above-mentioned steps 102 comprises: with the full photoresist of spin coating on the epitaxial wafer, through developing the ridged table top is removed with the photoresist of exterior domain, utilized wet etching method to erode away the ridged table top again.
Above-mentioned steps 103 comprises: utilize the method for wet etching to make the optical grating construction with periodic structure by lithography in ridged platform both sides.
Above-mentioned steps 104 comprises: using plasma strengthens chemical vapour deposition technique deposit one deck electric insulation layer on epitaxial wafer, and this insulating barrier is a silicon dioxide layer.
Above-mentioned steps 105 comprises: on the ridged table top of the epitaxial wafer of growing good electric insulation layer, utilize the wet etching method to make fairlead by lithography, the width of above-mentioned fairlead should be littler than the width of ridged table top.
Above-mentioned steps 106 comprises with step 107: preparation p side electrode 9 and N face electrode 10 on epitaxial wafer; This electrode is to form good ohmic electrodes in contact material with gallium arsenic material; Described p side electrode adopts the method preparation of sputter, the method preparation of N face electrodes use evaporation.
This method can further include after step 107: the epitaxial wafer that will have electrode is separated slivering, on the preceding rear facet of laser, plates anti-reflection film and high-reflecting film respectively.So just, the power output of laser can be improved, the chamber face of laser can also be protected.
For advantage of the present invention further is described, we utilize the structural parameters of indium gallium arsenic quantum-well semiconductor laser to come analog semiconductor laser active area light field restriction factor; The structural parameters of semiconductor laser are following:
A, SQW: the material of this SQW is an indium gallium arsenic, and wherein the indium component is 0.2, and thickness is 8nm;
B, P type ducting layer and N type ducting layer: the material of this ducting layer is a gallium aluminium arsenic, and wherein al compsn is 0.20, and thickness is 110nm;
C, P type limiting layer and N type limiting layer: the material of this limiting layer is a gallium aluminium arsenic, and wherein al compsn is 0.35, and thickness is 500nm;
D, insulating barrier: the material of this insulating barrier is a silicon dioxide, and thickness is 150nm;
The light restriction factor of utilizing slab guide and effective refractive index theoretical modeling to calculate the semiconductor laser of common no-raster structure is 88.76%; The light restriction factor of the semiconductor laser after forming optical grating construction in ridged platform both sides is 99.21%; The light restriction factor has improved 10.45%; Thereby the light field that has reduced active area is effectively revealed, and has reduced the threshold current of semiconductor laser.
Above-described specific embodiment has carried out further detailed description to the object of the invention, technical scheme and beneficial effect, should be understood that; The above is merely embodiments of the invention, is not limited to the present invention, and is all within spirit of the present invention and principle; Any modification of being made; Be equal to replacement, improve etc., all should be within protection range of the present invention.
Claims (1)
1. an edge-emission semiconductor laser that improves the active area optical field distribution is characterized in that: comprise the epitaxial slice structure that substrate, N type limiting layer, N type ducting layer, MQW active area, P type ducting layer, P type limiting layer, P type ohmic contact layer constitute successively; And utilize wet etching with epitaxial wafer both sides corrosion P type ohmic contact layer to P type limiting layer, depth bounds is: 400nm-600nm, thereby formation ridged platform erode away in ridged platform both sides and to have periodic optical grating construction.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103401140A (en) * | 2013-07-18 | 2013-11-20 | 北京工业大学 | Semiconductor laser with novel cavity surface non-injection area window structure |
| CN103647216A (en) * | 2013-11-15 | 2014-03-19 | 北京工业大学 | Semiconductor laser provided with asymmetric cavity surface non-injection zone window structure |
| CN104051960A (en) * | 2014-05-29 | 2014-09-17 | 北京牡丹电子集团有限责任公司 | Edge-emitting semiconductor laser device with grating structure and manufacturing method thereof |
| CN104377545A (en) * | 2014-12-11 | 2015-02-25 | 北京工业大学 | Piezoelectric-modulation vertical cavity semiconductor laser structure |
| CN104682195A (en) * | 2015-02-13 | 2015-06-03 | 北京牡丹视源电子有限责任公司 | Edge emitting semiconductor laser with tunnel junction structure and preparation method thereof |
| CN105914580A (en) * | 2016-07-07 | 2016-08-31 | 北京工业大学 | Semiconductor laser with lateral grating and longitudinal bragg reflector structure |
| CN110197993A (en) * | 2019-06-17 | 2019-09-03 | 威科赛乐微电子股份有限公司 | The VCSEL chip and its manufacturing method of high combined efficiency |
| CN112152085A (en) * | 2020-11-24 | 2020-12-29 | 度亘激光技术（苏州）有限公司 | Semiconductor preparation method, semiconductor structure and semiconductor device |
| CN112467518A (en) * | 2020-11-27 | 2021-03-09 | 因林光电科技(苏州)有限公司 | Semiconductor laser and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101895061A (en) * | 2010-08-03 | 2010-11-24 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser realizing high-power coherent light emission by utilizing grating |
-
2012
- 2012-03-09 CN CN2012100616989A patent/CN102593719A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101895061A (en) * | 2010-08-03 | 2010-11-24 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser realizing high-power coherent light emission by utilizing grating |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103401140B (en) * | 2013-07-18 | 2016-12-28 | 北京工业大学 | A kind of semiconductor laser with non-injection regions, face, chamber window structure |
| CN103401140A (en) * | 2013-07-18 | 2013-11-20 | 北京工业大学 | Semiconductor laser with novel cavity surface non-injection area window structure |
| CN103647216A (en) * | 2013-11-15 | 2014-03-19 | 北京工业大学 | Semiconductor laser provided with asymmetric cavity surface non-injection zone window structure |
| CN104051960A (en) * | 2014-05-29 | 2014-09-17 | 北京牡丹电子集团有限责任公司 | Edge-emitting semiconductor laser device with grating structure and manufacturing method thereof |
| CN104377545A (en) * | 2014-12-11 | 2015-02-25 | 北京工业大学 | Piezoelectric-modulation vertical cavity semiconductor laser structure |
| CN104377545B (en) * | 2014-12-11 | 2018-01-09 | 北京工业大学 | A kind of piezoelectric modulation vertical cavity semiconductor laser structure |
| CN104682195A (en) * | 2015-02-13 | 2015-06-03 | 北京牡丹视源电子有限责任公司 | Edge emitting semiconductor laser with tunnel junction structure and preparation method thereof |
| CN105914580A (en) * | 2016-07-07 | 2016-08-31 | 北京工业大学 | Semiconductor laser with lateral grating and longitudinal bragg reflector structure |
| CN105914580B (en) * | 2016-07-07 | 2019-01-29 | 北京工业大学 | Semiconductor laser with lateral grating and longitudinal bragg reflection mirror structure |
| CN110197993A (en) * | 2019-06-17 | 2019-09-03 | 威科赛乐微电子股份有限公司 | The VCSEL chip and its manufacturing method of high combined efficiency |
| CN110197993B (en) * | 2019-06-17 | 2024-01-26 | 威科赛乐微电子股份有限公司 | VCSEL chip with high recombination efficiency and manufacturing method thereof |
| CN112152085A (en) * | 2020-11-24 | 2020-12-29 | 度亘激光技术（苏州）有限公司 | Semiconductor preparation method, semiconductor structure and semiconductor device |
| CN112152085B (en) * | 2020-11-24 | 2021-02-12 | 度亘激光技术（苏州）有限公司 | Preparation method of semiconductor structure, semiconductor structure and semiconductor device |
| CN112467518A (en) * | 2020-11-27 | 2021-03-09 | 因林光电科技(苏州)有限公司 | Semiconductor laser and preparation method thereof |
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Application publication date: 20120718 |