CN102545052B - Edge-emitting diode semiconductor laser with raster structure - Google Patents
Edge-emitting diode semiconductor laser with raster structure Download PDFInfo
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- CN102545052B CN102545052B CN201210060694.9A CN201210060694A CN102545052B CN 102545052 B CN102545052 B CN 102545052B CN 201210060694 A CN201210060694 A CN 201210060694A CN 102545052 B CN102545052 B CN 102545052B
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Abstract
The invention discloses an edge-emitting diode semiconductor laser with a raster structure and belongs to the optoelectronic technical field of semiconductors. The edge-emitting diode semiconductor laser comprises a semiconductor laser epitaxial structure, a silicon dioxide insulating layer, an upper layer of P type electrode and a lower layer of P type electrode, wherein the semiconductor laser epitaxial structure consists of a substrate, an N type limit layer, an N type waveguide layer, a multi-quantum well active region, a P type waveguide layer, a P type limit layer and a P type ohmic contact layer; and the raster structure is grown on a crestiform table. The photolithographic process is adopted in a manufacturing process; and after scraping, a chip is sintered on a copper heat sink and is packaged and fixedly arranged on a radiating base. According to the structure, due to the introduction of the raster structure on the crestiform table, the lateral diffusion of current carriers injected into an active layer is inhibited, the uniformity of the current carriers in the active area is improved, and the threshold current of a semiconductor laser is reduced. The edge-emitting diode semiconductor laser is simple in manufacturing process, low in cost and good in repeatability.
Description
Technical field
The edge-emission semiconductor laser with optical grating construction, belongs to field of semiconductor photoelectron technique, relates to a kind of semiconductor laser.
Background technology
The advantages such as semiconductor laser is little, lightweight with its volume, low price are widely used in the key areas such as optical fiber communication, disc accessing, spectrum analysis and optical information processing.And be specially adapted to the military fields such as laser night vision, laser fuze, laser radar.Edge-emission semiconductor laser is the important component part of field of semiconductor lasers, and it is directly to utilize the natural cleavage plane of semi-conducting material to do resonant-cavity surface, and technique is simple, crystal face is perfect.Edge-emission semiconductor laser has the following advantages:
1. because active layer lateral dimensions reduces, light field symmetry increases, thereby can improve the coupling efficiency of light source and optical fiber.
2. because of restricted to electronics and light field in side direction, be conducive to reduce the threshold current of laser.
3. because active region area is little, easily obtain the least possible or flawless active layer of defect, except being used as the cleavage surface of resonant cavity, whole active area is isolated from the outside, and is conducive to improve stability and the reliability of device simultaneously.
Because edge-emission semiconductor laser is that Injection Current is added on a strip electrode, the non-equilibrium minority carrier that is injected into like this active layer by the formed concentration gradient in mind-set both sides make it inevitably sideways diffusion can occur, the uniformity that will distribute to active area charge carrier like this exerts an influence, thereby the threshold property of edge-emitting laser, output mode, power output have all been produced to harmful effect.
Of the present invention for improving the edge-emission semiconductor laser of active area charge carrier distributing homogeneity, its manufacture method has only increased by a step photoetching process on the basis of traditional edge-emission semiconductor laser technique, thus its manufacture craft is simple, cost is low, repeated.
Summary of the invention
The object of the invention is to improve the semiconductor laser active area charge carrier distributing homogeneity of limit transmitting, reduce the charge carrier of active area and reveal, thus the threshold current of reduction laser.
In order to achieve the above object, the invention provides a kind of edge-emission semiconductor laser with optical grating construction, it is characterized in that: comprise successively the epitaxial slice structure that substrate, N-type limiting layer, N-type ducting layer, Multiple Quantum Well active area, P type ducting layer, P type limiting layer, P type ohmic contact layer form; And utilize wet etching that P type ohmic contact layer is corroded to P type limiting layer in epitaxial wafer both sides, depth bounds is: 400nm-600nm, thus form ridged platform, on ridged platform, erode away and there is periodic optical grating construction.
In such scheme, on ridged platform, form optical grating construction, this optical grating construction can improve the charge carrier distributing homogeneity of active area, and reduce the charge carrier of active area and reveal, thus the threshold current of reduction laser.
From technique scheme, can draw, the present invention has following beneficial effect:
1, provided by the invention this for improving the edge-emission semiconductor laser of active area charge carrier distributing homogeneity, reduced the charge carrier of active area and revealed, thus the threshold current of reduction laser.
2, provided by the invention this for improving the edge-emission semiconductor laser of active area charge carrier distributing homogeneity, its manufacture method has only increased by a step photoetching process on the basis of traditional edge-emission semiconductor laser technique, completely compatible with existing edge-emission semiconductor laser preparation technology, preparation technology is simple, and cost is low.
3, provided by the invention this for improving the edge-emission semiconductor laser of active area charge carrier distributing homogeneity, be widely used in the edge-emission semiconductor laser that various materials are.
Accompanying drawing explanation
Fig. 1: the side direction generalized section of edge-emission semiconductor laser provided by the invention;
In figure: 1, Multiple Quantum Well active area, 2, P type ducting layer, 3, N-type ducting layer, 4, P type limiting layer, 5, N-type limiting layer, 6, P type ohmic contact layer, 7, gallium arsenide substrate, 8, silicon dioxide insulating layer, 9, upper strata P type electrode, 10, lower floor's N-type electrode.
Fig. 2: the method flow diagram of making edge-emission semiconductor laser provided by the invention.
Fig. 3: the optical grating construction schematic perspective view that improves the edge-emission semiconductor laser of active area optical field distribution provided by the invention.
In figure: 11, Multiple Quantum Well active area, 12, P type ducting layer, 13, N-type ducting layer, 14, P type limiting layer, 15, N-type limiting layer, 16, P type ohmic contact layer, 17, Semiconductor substrate.
Fig. 4: the encapsulating structure schematic diagram that improves the edge-emission semiconductor laser of active area optical field distribution provided by the invention;
In figure: 18, copper is heat sink, 19, potsherd, 20, copper strips, 21, the gold layer on potsherd, 22, gold thread, 23, semiconductor laser chip, 24, indium layer.
Fig. 5: the semiconductor laser P-I characteristic curve of no-raster structure.
Fig. 6: the P-I characteristic curve with the semiconductor laser of optical grating construction provided by the invention.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Embodiment 1
The method of making edge-emission semiconductor laser provided by the invention, is widely used in the edge-emission semiconductor laser of various materials system, and to be quantum well edge-emission semiconductor laser illustrate its principle as example to the indium gallium arsenic of 980nm of take below.
As shown in Figure 1, the present embodiment is a kind of comprises for improving the structure of the edge-emission semiconductor laser of active area charge carrier distributing homogeneity:
A, substrate 7, this substrate 7 is N-type gallium arsenic material, and thickness is about 300-400um, and this substrate 10 is for carrying out the epitaxial growth of laser layers of material thereon;
B, N-type limiting layer 5, this N-type limiting layer 5 is produced on substrate 7, and this N-type limiting layer 5 is N-type AlGaAs, can effectively limit light field;
C, N-type ducting layer 3 and P type ducting layer 2 form ducting layer, this ducting layer is produced on the both sides of quantum well layer 1, in N-type limiting layer 5 and P type limiting layer 4, its material is low-doped AlGaAs, and al composition is gradual change, and scope is: 0.05-0.35, ducting layer adopts after material component gradual change, its refractive index will diminish, and it is large that light restriction factor becomes, thereby reduce threshold current;
D, quantum well layer 1, this quantum well layer 1 is produced in N-type ducting layer 3 and P type ducting layer 2, and its material is indium gallium arsenic material;
E, P type limiting layer 4, this P type limiting layer 4 is produced on P type ducting layer 2, and its material is AlGaAs;
F, P type ohmic contact layer 6, its material is for can form with gallium arsenic material the material of good ohmic contact;
Simultaneously, because edge-emission semiconductor laser is that Injection Current is added on a strip electrode, the non-equilibrium minority carrier that is injected into like this active layer by the formed concentration gradient in mind-set both sides make it inevitably sideways diffusion can occur, on ridged platform, form the charge carrier distributing homogeneity that optical grating construction can improve active area effectively, reduce the charge carrier of active area and reveal, thus the threshold current of reduction laser.
Embodiment 2
Fig. 2 is the method flow diagram of making edge-emission semiconductor laser provided by the invention, and the method comprises the following steps:
Step 101: prepare successively gallium aluminium arsenic limiting layer, gallium aluminium arsenic light waveguide-layer, indium gallium arsenic mqw active layer on N-type gallium arsenic substrate, and formation limits respectively heterostructure;
Step 102: make ridge waveguide on epitaxial wafer by lithography;
Step 103: deposit electric insulation layer on epitaxial wafer;
Step 104: make fairlead on electric insulation layer by lithography;
Step 105: the fairlead place on ridged platform makes optical grating construction by lithography;
Step 106: prepare p side electrode on epitaxial wafer;
Step 107: N-type face substrate is carried out preparing N face electrode after attenuated polishing;
The method flow diagram of the making edge-emission semiconductor laser providing for the invention described above, below in conjunction with the schematic diagram of the edge-emission semiconductor laser side direction section shown in Fig. 1, the present invention is described in more detail.
N-type substrate described in above-mentioned steps 101 is 15 ° of N-type drift angle gallium arsenic substrates 7 of the inclined to one side <111> direction of (100) face.Select this substrate, adopt metal-organic chemical vapor deposition equipment (MOCVD) on the gallium arsenic substrate of N-type drift angle epitaxial growth light waveguide-layer 2, indium gallium arsenic mqw active layer 1 on light waveguide-layer 3, P type gallium aluminium arsenic upper limiting layer 4, P type gallium aluminium arsenic under N-type gallium aluminium arsenic lower limit layer 5, N-type gallium aluminium arsenic, heavily doped P type gallium arsenic ohmic contact layer 6.Select 15 ° of N-type drift angle gallium arsenic substrates of the inclined to one side <111> direction of (100) face can suppress the formation of metastable state ordered structure in growth course on the one hand; Can also improve on the other hand P type magazine doping content in limiting layer, improve effective potential barrier of electronics, suppress the electronics of active area and reveal, be conducive to prepare high power semiconductor lasers.
Above-mentioned steps 102 comprises: by the full photoresist of spin coating on epitaxial wafer, by developing, ridged table top is removed with the photoresist of exterior domain, recycling wet etching method erodes away ridged table top.
Above-mentioned steps 103 comprises: on epitaxial wafer, using plasma strengthens chemical vapour deposition technique (PECVD) deposit one deck electric insulation layer, and this insulating barrier is silicon dioxide layer.
Above-mentioned steps 104 comprises: on the ridged table top of epitaxial wafer of growing good electric insulation layer, utilize wet etching method to make fairlead by lithography, the width of above-mentioned fairlead should be less than the width of ridged table top.
Above-mentioned steps 105 comprises: on fairlead, utilize wet etching method to make the optical grating construction with periodic structure by lithography.
Above-mentioned steps 106 and step 107 comprise: on epitaxial wafer, prepare p side electrode 9 and N face electrode 10, this electrode is to form the electrode material that good ohmic contacts with gallium arsenic material, described p side electrode adopts the method preparation of sputter, and N face electrode adopts the method preparation of evaporation.
The method can further include after step 107: by having the epitaxial wafer solution slivering of electrode, on the front rear facet of laser, plate respectively anti-reflection film and high-reflecting film.So just, the power output of laser can be improved, the chamber face of laser can also be protected.
By above-mentioned steps, prepare semiconductor laser epitaxial wafer, after scribing, sintering is on heat sink, and then encapsulation is fixed on cooling base, at 28 ℃ of temperature, tests, obtain the output characteristic curve as Fig. 6, Fig. 5 is the output characteristic curve of the semiconductor laser of no-raster structure; After employing optical grating construction, the threshold current of semiconductor laser is reduced to 0.42A by 0.5A, and its power output also improves.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect have been carried out to further detailed description; should be understood that; the foregoing is only embodiments of the invention, be not limited to the present invention, within the spirit and principles in the present invention all; any modification of making; be equal to replacement, improve etc., all should be within protection range of the present invention.
Claims (1)
1. an edge-emission semiconductor laser with optical grating construction, is characterized in that: comprise successively the epitaxial slice structure that substrate, N-type limiting layer, N-type ducting layer, Multiple Quantum Well active area, P type ducting layer, P type limiting layer, P type ohmic contact layer form; And utilize wet etching that P type ohmic contact layer is corroded to P type limiting layer in epitaxial wafer both sides, depth bounds is: 400nm-600nm, thereby form ridged platform, on ridged platform, erode away and there is periodic optical grating construction, and the direction of optical grating construction is along the direction of ridged platform extension.
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| CN104051960A (en) * | 2014-05-29 | 2014-09-17 | 北京牡丹电子集团有限责任公司 | Edge-emitting semiconductor laser device with grating structure and manufacturing method thereof |
| CN104600565B (en) * | 2015-01-22 | 2017-08-25 | 中国科学院半导体研究所 | A kind of gallium arsenide laser with low electronics leakage and preparation method thereof |
| CN105914580B (en) * | 2016-07-07 | 2019-01-29 | 北京工业大学 | Semiconductor laser with lateral grating and longitudinal bragg reflection mirror structure |
| US10230217B2 (en) * | 2016-10-31 | 2019-03-12 | Sumitomo Electric Device Innovations, Inc. | Semiconductor laser diode having multi-quantum well structure |
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| CN109616869A (en) * | 2018-12-28 | 2019-04-12 | 西安立芯光电科技有限公司 | A kind of quasi-continuous semiconductor laser chip of high power |
| CN111769436B (en) * | 2020-07-07 | 2021-09-28 | 因林光电科技(苏州)有限公司 | Distributed feedback laser chip and preparation method thereof |
| US20230327405A1 (en) * | 2020-11-06 | 2023-10-12 | Mitsubishi Electric Corporation | Optical semiconductor device |
| CN112636162A (en) * | 2020-12-18 | 2021-04-09 | 勒威半导体技术(嘉兴)有限公司 | Packaging structure and packaging method of semiconductor laser |
| CN112713506A (en) * | 2020-12-25 | 2021-04-27 | 勒威半导体技术(嘉兴)有限公司 | Bar semiconductor laser and preparation method thereof |
| CN112688165A (en) * | 2020-12-25 | 2021-04-20 | 勒威半导体技术(嘉兴)有限公司 | Bar semiconductor laser capable of reducing threshold current and preparation method thereof |
| CN113206441A (en) * | 2021-04-30 | 2021-08-03 | 中国科学院半导体研究所 | Main oscillation power amplification laser and preparation method thereof |
| CN114497310B (en) * | 2022-04-15 | 2022-07-05 | 苏州长光华芯光电技术股份有限公司 | Lateral optical mode control high-power semiconductor device and preparation method thereof |
| CN116387973B (en) * | 2023-06-05 | 2023-12-29 | 福建慧芯激光科技有限公司 | Stable wavelength edge-emitting laser |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101026287A (en) * | 2006-02-22 | 2007-08-29 | 中国科学院半导体研究所 | GaAs base single-mode emitting quantum cascade laser structure and its manufacturing method |
-
2012
- 2012-03-09 CN CN201210060694.9A patent/CN102545052B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101026287A (en) * | 2006-02-22 | 2007-08-29 | 中国科学院半导体研究所 | GaAs base single-mode emitting quantum cascade laser structure and its manufacturing method |
Non-Patent Citations (4)
| Title |
|---|
| Material Growth and Device Fabrication of GaAs Based 1.2um GaInNAs Quantum Well Laser Diodes;Niu Zhichuan et al.;《半导体学报》;20050930;第26卷(第9期);1860-1864 * |
| Niu Zhichuan et al..Material Growth and Device Fabrication of GaAs Based 1.2um GaInNAs Quantum Well Laser Diodes.《半导体学报》.2005,第26卷(第9期),1860-1864. * |
| 戚晓东等.面发射分布反馈半导体激光器及光栅耦合半导体激光器.《中国光学与应用光学》.2010,第3卷(第5期),415-425. * |
| 面发射分布反馈半导体激光器及光栅耦合半导体激光器;戚晓东等;《中国光学与应用光学》;20101031;第3卷(第5期);415-425 * |
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