CN104600565B - A kind of gallium arsenide laser with low electronics leakage and preparation method thereof - Google Patents
A kind of gallium arsenide laser with low electronics leakage and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of gallium arsenide laser with low electronics leakage and preparation method thereof, by introducing thicker narrow band gap insert layer between n-type ducting layer and active area, electron energy is reduced.The reduction of electron energy, which not only increases SQW capture carrier efficiency, can also improve the temperature characterisitic of SQW, so as to reduce electronics leakage.The present invention is by the use of quaternary material as insert layer, by selecting suitable material component, not only reduce insert layer band gap width, and it is consistent with n-type ducting layer refractive index to remain inserted into the refractive index of layer, it is to avoid influence of the introducing of insert layer to optical field distribution.Therefore, by introducing thicker narrow band gap insert layer between n-type ducting layer and active area, the performances such as GaAs base lasers threshold current, electro-optical efficiency are substantially improved.
Description
Technical field
The present invention relates to semiconductor photoelectronic device technical field, especially a kind of GaAs with low electronics leakage
Laser and preparation method thereof.
Background technology
With developing rapidly for semiconductor photoelectronic device, high power semiconductor lasers arise at the historic moment.Due to semiconductor
The advantages of laser small volume, high cheap, electro-optical efficiency and long lifespan, semiconductor laser is in optoelectronic areas
Have a very wide range of applications.Semiconductor laser is ground in field of industrial processing, therapeutic treatment field, military field and theory
Study carefully field and all play important role.So far, compared with other semiconductor III-V materials, to GaAs material
Research is most ripe.Thus, people are also highest to the performance requirement of gallium arsenide laser, and this shows gallium arsenide laser
Device can have very low threshold current, very low vertical divergence angle, higher electro-optical efficiency etc. other semiconductor lasers
The incomparable advantage of device.
Gallium arsenide laser material layer is broadly divided into three parts：Single quantum well or the active area, active of MQW formation
Area side provides the n areas of electronics for active area and active area opposite side provides the p areas in hole for active area.Carrier is from limit
Preparative layer injects, and is then transported to by diffusion and drift above Quantum well active district edge, is then answered by SQW capture
Merge and produce light.But it is due to limiting layer and the larger band gap width of ducting layer, causes electron energy when being captured by SQW
It is higher.
However, the electronics of higher-energy can make laser have serious electronics leakage.Electronics leakage refers to that electronics does not exist
SQW occurs radiation recombination and is transported to p areas, and occurring the compound electronics that causes with the hole in p areas reveals.Electronics leakage is made
Into the loss of electronics, so as to have impact on the performances such as the threshold current of laser, efficiency.The electronics of higher-energy is revealed electronics
Influence be mainly manifested in two aspects.First, temperature characterisitic is deteriorated.The process that electronics is captured by SQW, is exactly that electronics leads to
The interaction crossed between transmitting optical phonon and carrier discharges the energy of oneself until the process of the ground state level of SQW.
These energy being released can heat Quantum well active district in the form of heat.Obviously, electron energy is higher, and the energy of release is got over
Height, active area is heated more serious.Active area temperature is too high, and the electronics in trap can be made to escape out again, cause electronics to let out
Dew.Auger recombination can be made more serious in addition, active area temperature is too high, auger recombination can produce hot carrier and cause electronics to let out
Dew.Second, the reduction of SQW capture rate.SQW can be regarded as an effective trap center.However, injected electrons
Energy is higher, speed is bigger, and the time interacted with SQW is shorter, is just more difficult to be captured.In addition, the energy of injection electronics
Amount is higher, and the collision matrix member for scattering to SQW from barrier layer is also smaller.The reduction of SQW capture rate is ultimately resulted in, this also can
More electronics is not directed across SQW to p areas by SQW capture, cause electronics to reveal.
For laser electronics leakage problem, the present invention by laser structure n-type ducting layer and active area it
Between introduce quaternary material narrow band gap insert layer, can not only reduce the electron energy for being injected into active area, and can pass through
Suitable material component is selected, keeps Refractive Index of Material unaffected.In summary, the reduction amount of not only increasing of electron energy
Sub- trap capture carrier efficiency can also improve the temperature characterisitic of SQW, so as to reduce electronics leakage.
The content of the invention
(1) technical problem to be solved
In view of this, it is a primary object of the present invention to propose a kind of gallium arsenide laser with low electronics leakage and its
Preparation method, to improve SQW capture carrier efficiency, improves the temperature characterisitic of SQW, so as to reduce electronics leakage.
(2) technical scheme
To reach above-mentioned purpose, the invention provides a kind of gallium arsenide laser with low electronics leakage, including：N-type
GaAs (GaAs) substrate 10；N-type limiting layer 11, is formed on n-type GaAs substrates 10；N-type ducting layer 12, is formed at n-type
On limiting layer 11；Quantum well active district 14, is formed on n-type ducting layer 12；P-type ducting layer 15, being formed at SQW has
On source region 14；P-type limiting layer 16, is formed on p-type ducting layer 15；P type contact layer 17, be formed at p-type limiting layer 16 it
On；P-type Ohmic electrode 18, is formed on P type contact layer 17；N-type Ohmic electrode 19, is formed at the back of the body of gallium arsenide substrate 10
Face；Wherein, the gallium arsenide laser also includes：Insert layer 13, is formed between n-type ducting layer 12 and Quantum well active district 14,
The insert layer 13 is narrow band gap insert layer, can make the electron energy reduction for being injected into Quantum well active district 14.
In such scheme, the material that the insert layer 13 is used, for quaternary material, is InGaAsP material or AlGaInP
Material, 0.1-0.5 μm of thickness.
In such scheme, the band gap width of the insert layer 13 is less than the band gap width of the n-type ducting layer 12, described
The refractive index of narrow band gap insert layer 13 is consistent with the refractive index of the n-type ducting layer 12.
In such scheme, the SQW number of the Quantum well active district 14 is 1-5, and the material used is GaAs material
Material, gallium arsenic phosphide material or indium gallium arsenic material, thickness is 1-10nm.The material that the Quantum well active district 14 is used is GaAs material
When material, gallium arsenic phosphide material or indium gallium arsenic material, corresponding quantum barrier material is respectively AlGaAs, indium gallium phosphate material or gallium arsenic
Phosphate material.
In such scheme, the thickness of the p-type ducting layer 15 is 0.2-2 μm.
To reach above-mentioned purpose, present invention also offers a kind of making side of the gallium arsenide laser with low electronics leakage
Method, including：The growing n-type limiting layer 11 on gallium arsenide substrate 10；The growing n-type ducting layer 12 on n-type limiting layer 11；
Insert layer 13 is grown on n-type ducting layer 12；The grown quantum trap active area 14 on insert layer 13；In Quantum well active district 14
On growth p-type ducting layer 15；P-type limiting layer 16 is grown on p-type ducting layer 15；P-type is grown on p-type limiting layer 16
Contact layer 17；Wet etching or dry etching formation ridge are carried out to P type contact layer 17 and p-type limiting layer 16；In P type contact layer
P-type Ohmic electrode 18 is made on 17；Gallium arsenide substrate 10 is thinned, cleaned；N-type ohm is made at the back side of gallium arsenide substrate 10
Electrode 19；And cleavage, plated film are carried out, finally it is encapsulated on shell, completes the gallium arsenide laser with low electronics leakage
Make.
In such scheme, the material that the insert layer 13 is used, for quaternary material, is InGaAsP material or AlGaInP
Material, 0.1-0.5 μm of thickness.
In such scheme, the band gap width of the insert layer 13 is less than the band gap width of the n-type ducting layer 12, described
The refractive index of narrow band gap insert layer 13 is consistent with the refractive index of the n-type ducting layer 12.
In such scheme, in encapsulation, the P type contact layer 17 contacts heat sink inverted structure.
(3) beneficial effect
It can be seen from the above technical proposal that the invention has the advantages that：
1st, gallium arsenide laser with low electronics leakage that the present invention is provided and preparation method thereof, by n-type waveguide
Thicker narrow band gap insert layer is introduced between layer and active area, electron energy is reduced.The reduction of electron energy is not only increased
SQW captures carrier efficiency, can also improve the temperature characterisitic of SQW, so as to reduce electronics leakage.
2nd, the present invention, by selecting suitable material component, not only makes insert layer band by the use of quaternary material as insert layer
Gap width is reduced, and it is consistent with n-type ducting layer refractive index to remain inserted into the refractive index of layer, it is to avoid the introducing of insert layer
Influence to optical field distribution.Therefore, by introducing thicker narrow band gap insert layer between n-type ducting layer and active area, significantly
Improve the performances such as GaAs base lasers threshold current, electro-optical efficiency.
Brief description of the drawings
Fig. 1 is the structural representation for the gallium arsenide laser with low electronics leakage that the present invention is provided.
Fig. 2 is conduction band schematic diagram of the gallium arsenide laser with low electronics leakage shown in Fig. 1 in the direction of growth.
Fig. 3 is the method flow diagram for making the gallium arsenide laser with low electronics leakage shown in Fig. 1.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail.
The present invention is not being influenceed by the narrow band gap insert layer of the introducing quaternary material between n-type ducting layer and active area
In the case of index distribution, make the electron energy reduction for being injected into active area, so as to improve electronics capture rate and temperature
Characteristic, finally substantially reduces electronics leakage.The reduction of electron energy not only increases SQW capture carrier efficiency and may be used also
To improve the temperature characterisitic of SQW, so as to reduce electronics leakage.The present invention passes through selection by the use of quaternary material as insert layer
Suitable material component, not only makes the reduction of insert layer band gap width, and can remain inserted into the refractive index and n-type ducting layer of layer
Refractive index is consistent, it is to avoid influence of the introducing of insert layer to optical field distribution.
The key of the present invention is that the band gap width of quaternary insertion layer material will be less than the band gap width of n-type waveguide material,
The refractive index of insert layer is consistent with the refractive index of n-type waveguide material, reduces shadow of the introducing to optical field distribution of insert layer as far as possible
Ring.
As shown in figure 1, Fig. 1 is the structural representation for the gallium arsenide laser with low electronics leakage that the present invention is provided,
There is the gallium arsenide laser of low electronics leakage to include for this：N-type GaAs (GaAs) substrate 10；N-type limiting layer 11, is formed at n
On type GaAs substrates 10；N-type ducting layer 12, is formed on n-type limiting layer 11；Quantum well active district 14, is formed at n-type ripple
On conducting shell 12；P-type ducting layer 15, is formed on Quantum well active district 14；P-type limiting layer 16, is formed at p-type ducting layer 15
On；P type contact layer 17, is formed on p-type limiting layer 16；P-type Ohmic electrode 18, is formed on P type contact layer 17；n
Type Ohmic electrode 19, is formed at the back side of gallium arsenide substrate 10；Wherein, the gallium arsenide laser also includes：Insert layer 13, is formed
Between n-type ducting layer 12 and Quantum well active district 14, the insert layer 13 is narrow band gap insert layer, can make to be injected into SQW
The electron energy reduction of active area 14.
The material that insert layer 13 is used, for quaternary material, is InGaAsP material or AlGaInP material, thickness 0.1-0.5
μm.The band gap width of insert layer 13 is less than the band gap width of the n-type ducting layer 12, the refraction of the narrow band gap insert layer 13
Rate is consistent with the refractive index of the n-type ducting layer 12.
The SQW number of Quantum well active district 14 is 1-5, the material used for GaAs material, gallium arsenic phosphide material or
Indium gallium arsenic material, thickness is 1-10nm.The material that Quantum well active district 14 is used is GaAs material, gallium arsenic phosphide material or indium gallium
During arsenic material, corresponding quantum barrier material is respectively AlGaAs, indium gallium phosphate material or gallium arsenic phosphide material.
The thickness of p-type ducting layer 15 is 0.2-2 μm.
Fig. 2 is conduction band schematic diagram of the gallium arsenide laser with low electronics leakage shown in Fig. 1 in the direction of growth.In figure
In 2, electronics injects from n-type electrode, is spread from n-type limiting layer or floats to ducting layer and insert layer.Due to insert layer conduction band compared with
Low, the electron energy for being injected into SQW is also reduced by.
Based on the structural representation of the gallium arsenide laser with low electronics leakage shown in Fig. 1, Fig. 3 shows making figure
The method flow diagram of the gallium arsenide laser with low electronics leakage shown in 1, this method comprises the following steps：
Step 1：The growing n-type limiting layer 11 on gallium arsenide substrate 10；
Step 2：The growing n-type ducting layer 12 on n-type limiting layer 11；
Step 3：Insert layer 13 is grown on n-type ducting layer 12；
Step 4：The grown quantum trap active area 14 on insert layer 13；
Step 5：P-type ducting layer 15 is grown on Quantum well active district 14；
Step 6：P-type limiting layer 16 is grown on p-type ducting layer 15；
Step 7：P type contact layer 17 is grown on p-type limiting layer 16；
Step 8：Wet etching or dry etching formation ridge are carried out to P type contact layer 17 and p-type limiting layer 16；
Step 9：P-type Ohmic electrode 18 is made on P type contact layer 17；
Step 10：Gallium arsenide substrate 10 is thinned, cleaned；
Step 11：N-type Ohmic electrode 19 is made at the back side of gallium arsenide substrate 10；
Step 12：Cleavage, plated film are carried out, is finally encapsulated on shell, the gallium arsenide laser with low electronics leakage is completed
The making of device.
Wherein, the material that insert layer 13 described in step 3 is used, for quaternary material, is InGaAsP material or AlGaInP
Material, 0.1-0.5 μm of thickness.The band gap width of insert layer 13 is less than the band gap width of the n-type ducting layer 12, the arrowband
The refractive index of gap insert layer 13 is consistent with the refractive index of the n-type ducting layer 12.
In addition, the P type contact layer 17 contacts heat sink inverted structure in encapsulation.
Based on the method flow diagram of gallium arsenide laser of the making with low electronics leakage shown in Fig. 2, presented below one
Kind make the specific embodiment of the gallium arsenide laser with low electronics leakage, its structure as shown in figure 1, specific preparation process such as
Under：In gallium arsenide substrate 10 using metalorganic vapor phase chemical deposition successively growing n-type limiting layer 11, n-type ducting layer 12,
Insert layer 13, Quantum well active district 14, p-type ducting layer 15, p-type limiting layer 16 and P type contact layer 17；Then by photoetching, wet
Method, which is corroded, laser ridge, makes p-electrode, is then thinned, cleaned by substrate 10, makes n-type electrode；Finally, solved
Reason, plated film, are finally encapsulated on shell, and a kind of laser of reduction gallium arsenide laser electronics leakage is made.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail it is bright, should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., should be included in the guarantor of the present invention
Within the scope of shield.
Claims (6)
1. a kind of gallium arsenide laser with low electronics leakage, including：
N-type GaAs (GaAs) substrate (10)；
N-type limiting layer (11), is formed on n-type GaAs substrates (10)；
N-type ducting layer (12), is formed on n-type limiting layer (11)；
Quantum well active district (14), is formed on n-type ducting layer (12)；
P-type ducting layer (15), is formed on Quantum well active district (14)；
P-type limiting layer (16), is formed on p-type ducting layer (15)；
P type contact layer (17), is formed on p-type limiting layer (16)；
P-type Ohmic electrode (18), is formed on P type contact layer (17)；
N-type Ohmic electrode (19), is formed at the back side of gallium arsenide substrate (10)；
Characterized in that, the gallium arsenide laser also includes：
Insert layer (13), is formed between n-type ducting layer (12) and Quantum well active district (14), and the insert layer (13) is narrow band gap
Insert layer, can make the electron energy reduction for being injected into Quantum well active district (14)；
The material that the insert layer (13) uses, for quaternary material, is InGaAsP material or AlGaInP material, thickness 0.1-
0.5μm；
The band gap width of the insert layer (13) is less than the band gap width of the n-type ducting layer (12), the insert layer (13)
Refractive index it is consistent with the refractive index of the n-type ducting layer (12).
2. the gallium arsenide laser according to claim 1 with low electronics leakage, it is characterised in that the SQW has
The SQW number of source region (14) is 1-5, and the material used is thick for GaAs material, gallium arsenic phosphide material or indium gallium arsenic material
Spend for 1-10nm.
3. the gallium arsenide laser according to claim 2 with low electronics leakage, it is characterised in that the SQW has
When the material that source region (14) is used is GaAs material, gallium arsenic phosphide material or indium gallium arsenic material, corresponding quantum barrier material difference
For AlGaAs, indium gallium phosphate material or gallium arsenic phosphide material.
4. the gallium arsenide laser according to claim 1 with low electronics leakage, it is characterised in that the p-type waveguide
The thickness of layer (15) is 0.2-2 μm.
5. a kind of preparation method of the gallium arsenide laser with low electronics leakage, including：
The growing n-type limiting layer (11) on gallium arsenide substrate (10)；
The growing n-type ducting layer (12) on n-type limiting layer (11)；
Insert layer (13) is grown on n-type ducting layer (12)；
The grown quantum trap active area (14) on insert layer (13)；
P-type ducting layer (15) is grown on Quantum well active district (14)；
P-type limiting layer (16) is grown on p-type ducting layer (15)；
P type contact layer (17) is grown on p-type limiting layer (16)；
Wet etching or dry etching formation ridge are carried out to P type contact layer (17) and p-type limiting layer (16)；
P-type Ohmic electrode (18) is made on P type contact layer (17)；
Gallium arsenide substrate (10) is thinned, cleaned；
N-type Ohmic electrode (19) is made at gallium arsenide substrate (10) back side；And
Cleavage, plated film are carried out, is finally encapsulated on shell, the making of the gallium arsenide laser with low electronics leakage is completed；
The material that the insert layer (13) uses, for quaternary material, is InGaAsP material or AlGaInP material, thickness 0.1-
0.5μm；
The insert layer (13) is narrow band gap insert layer, and its band gap width is less than the band gap width of the n-type ducting layer (12),
The refractive index of the insert layer (13) is consistent with the refractive index of the n-type ducting layer (12).
6. the preparation method of the gallium arsenide laser according to claim 5 with low electronics leakage, it is characterised in that
The P type contact layer (17) contacts heat sink inverted structure during encapsulation.
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| JP4119158B2 (en) * | 2002-04-23 | 2008-07-16 | 三菱電機株式会社 | Semiconductor light emitting device using tilted multiple quantum barrier |
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|---|---|---|---|---|
| CN1599086A (en) * | 2003-09-19 | 2005-03-23 | 住友电气工业株式会社 | Semiconductor light emitting device |
| CN103765707A (en) * | 2011-08-16 | 2014-04-30 | 康宁股份有限公司 | Hole blocking layers in non-polar and semi-polar green light emitting devices |
| CN102545052A (en) * | 2012-03-09 | 2012-07-04 | 北京工业大学 | Edge-emitting diode semiconductor laser with raster structure |
| CN103022296A (en) * | 2012-11-30 | 2013-04-03 | 华南师范大学 | Semiconductor extension structure and luminescent device thereof |
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