CN102545052A - Edge-emitting diode semiconductor laser with raster structure - Google Patents
Edge-emitting diode semiconductor laser with raster structure Download PDFInfo
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- CN102545052A CN102545052A CN2012100606949A CN201210060694A CN102545052A CN 102545052 A CN102545052 A CN 102545052A CN 2012100606949 A CN2012100606949 A CN 2012100606949A CN 201210060694 A CN201210060694 A CN 201210060694A CN 102545052 A CN102545052 A CN 102545052A
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Abstract
The invention discloses an edge-emitting diode semiconductor laser with a raster structure and belongs to the optoelectronic technical field of semiconductors. The edge-emitting diode semiconductor laser comprises a semiconductor laser epitaxial structure, a silicon dioxide insulating layer, an upper layer of P type electrode and a lower layer of P type electrode, wherein the semiconductor laser epitaxial structure consists of a substrate, an N type limit layer, an N type waveguide layer, a multi-quantum well active region, a P type waveguide layer, a P type limit layer and a P type ohmic contact layer; and the raster structure is grown on a crestiform table. The photolithographic process is adopted in a manufacturing process; and after scraping, a chip is sintered on a copper heat sink and is packaged and fixedly arranged on a radiating base. According to the structure, due to the introduction of the raster structure on the crestiform table, the lateral diffusion of current carriers injected into an active layer is inhibited, the uniformity of the current carriers in the active area is improved, and the threshold current of a semiconductor laser is reduced. The edge-emitting diode semiconductor laser is simple in manufacturing process, low in cost and good in repeatability.
Description
Technical field
Have the edge-emission semiconductor laser of optical grating construction, belong to field of semiconductor photoelectron technique, relate to a kind of semiconductor laser.
Background technology
Advantages such as semiconductor laser is little, in light weight with its volume, low price are widely used in key areas such as optical fiber communication, disc accessing, spectrum analysis and optical information processing.And be specially adapted to military fields such as laser night vision, laser fuze, laser radar.Edge-emission semiconductor laser is the important component part of field of semiconductor lasers, and it is directly to utilize the natural cleavage plane of semi-conducting material to do resonant-cavity surface, and technology is simple, crystal face is perfect.Edge-emission semiconductor laser has the following advantages:
1. reduce owing to the active layer lateral dimensions, the light field symmetry increases, thereby can improve the coupling efficiency of light source and optical fiber.
2. because electronics and light field are had restriction, help reducing the threshold current of laser in side direction.
3. because active region area is little, obtain the least possible or flawless active layer of defective easily, except that being used as the cleavage surface of resonant cavity, whole active area is isolated from the outside, and helps improving the stability and the reliability of device simultaneously.
Because edge-emission semiconductor laser is that injection current is added on the strip electrode; The non-equilibrium minority carrier that is injected into active layer like this makes it inevitably sideways diffusion can take place by the formed concentration gradient in middle mind-set both sides; Will the uniformity that the active area charge carrier distributes be exerted an influence like this, thereby threshold property, output mode, the power output of edge-emitting laser all produced harmful effect.
The edge-emission semiconductor laser that is used to improve active area charge carrier distributing homogeneity of the present invention; Its manufacture method has only increased by a step photoetching process on the basis of traditional edge-emission semiconductor laser technology, thus its manufacture craft is simple, cost is low, repeated.
Summary of the invention
The objective of the invention is to improve the semiconductor laser active area charge carrier distributing homogeneity of limit emission, reduce the charge carrier of active area and reveal, thus the threshold current of reduction laser.
In order to achieve the above object; The invention provides a kind of edge-emission semiconductor laser, it is characterized in that: comprise the epitaxial slice structure that substrate, N type limiting layer, N type ducting layer, MQW active area, P type ducting layer, P type limiting layer, P type ohmic contact layer constitute successively with optical grating construction; And utilize wet etching with epitaxial wafer both sides corrosion P type ohmic contact layer to P type limiting layer, depth bounds is: 400nm-600nm, thereby formation ridged platform erode away on the ridged platform and have periodic optical grating construction.
In the such scheme, on the ridged platform, form optical grating construction, this optical grating construction can improve the charge carrier distributing homogeneity of active area, and reduce the charge carrier of active area and reveal, thus the threshold current of reduction laser.
Can draw from technique scheme, the present invention has following beneficial effect:
1, this edge-emission semiconductor laser that is used to improve active area charge carrier distributing homogeneity provided by the invention has reduced the charge carrier of active area and has revealed, thereby reduces the threshold current of laser.
2, this edge-emission semiconductor laser that is used to improve active area charge carrier distributing homogeneity provided by the invention; Its manufacture method has only increased by a step photoetching process on the basis of traditional edge-emission semiconductor laser technology; Compatible fully with existing edge-emission semiconductor laser preparation technology; Preparation technology is simple, and cost is low.
3, this edge-emission semiconductor laser that is used to improve active area charge carrier distributing homogeneity provided by the invention is adaptable across the edge-emission semiconductor laser of various materials system.
Description of drawings
Fig. 1: the side direction generalized section of edge-emission semiconductor laser provided by the invention;
Among the figure: 1, MQW active area, 2, P type ducting layer, 3, N type ducting layer, 4, P type limiting layer, 5, N type limiting layer, 6, P type ohmic contact layer, 7, gallium arsenide substrate, 8, silicon dioxide insulating layer, 9, upper strata P type electrode, 10, the N of lower floor type electrode.
Fig. 2: the method flow diagram of making edge-emission semiconductor laser provided by the invention.
Fig. 3: the optical grating construction schematic perspective view that improves the edge-emission semiconductor laser of active area optical field distribution provided by the invention.
Among the figure: 11, MQW active area, 12, P type ducting layer, 13, N type ducting layer, 14, P type limiting layer, 15, N type limiting layer, 16, P type ohmic contact layer, 17, Semiconductor substrate.
Fig. 4: the encapsulating structure sketch map that improves the edge-emission semiconductor laser of active area optical field distribution provided by the invention;
Among the figure: 18, copper is heat sink, and 19, potsherd, 20, copper strips, 21, the gold layer on the potsherd, 22, gold thread, 23, semiconductor laser chip, 24, the indium layer.
Fig. 5: the semiconductor laser P-I characteristic curve of no-raster structure.
Fig. 6: the P-I characteristic curve with semiconductor laser of optical grating construction provided by the invention.
Embodiment
In order to make the object of the invention, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, to further explain of the present invention.
The method of making edge-emission semiconductor laser provided by the invention, adaptable across the edge-emission semiconductor laser that various materials are, the indium gallium arsenic with 980nm is that quantum well edge-emission semiconductor laser is its principle of example explanation below.
As shown in Figure 1, the structure that present embodiment is a kind of to be used to improve the edge-emission semiconductor laser of active area charge carrier distributing homogeneity comprises:
A, substrate 7, this substrate 7 are N type gallium arsenic material, and thickness is about 300-400um, and this substrate 10 is used for carrying out the epitaxial growth of laser layers of material above that;
B, N type limiting layer 5, this N type limiting layer 5 is produced on the substrate 7, and this N type limiting layer 5 is a N type gallium aluminium arsenic material, can effectively limit light field;
C, N type ducting layer 3 and P type ducting layer 2 are formed ducting layer, and this ducting layer is produced on the both sides of quantum well layer 1, in N type limiting layer 5 and the P type limiting layer 4; Its material is low-doped gallium aluminium arsenic material, and al compsn is gradual change, and scope is: 0.05-0.35; After ducting layer adopts the material component gradual change; Its refractive index will diminish, and it is big that the light restriction factor becomes, thereby reduce threshold current;
D, quantum well layer 1, this quantum well layer 1 are produced in N type ducting layer 3 and the P type ducting layer 2, and its material is an indium gallium arsenic material;
E, P type limiting layer 4, this P type limiting layer 4 is produced on the P type ducting layer 2, and its material is a gallium aluminium arsenic material;
F, P type ohmic contact layer 6, its material are the material that can form good Ohmic contact with gallium arsenic material;
Simultaneously; Because edge-emission semiconductor laser is that injection current is added on the strip electrode; The non-equilibrium minority carrier that is injected into active layer like this makes it inevitably sideways diffusion can take place by the formed concentration gradient in middle mind-set both sides; On the ridged platform, form the charge carrier distributing homogeneity that optical grating construction can improve active area effectively, reduce the charge carrier of active area and reveal, thus the threshold current of reduction laser.
Fig. 2 is the method flow diagram of making edge-emission semiconductor laser provided by the invention, and this method may further comprise the steps:
Step 101: on N type gallium arsenic substrate, prepare gallium aluminium arsenic limiting layer, gallium aluminium arsenic light waveguide-layer, indium gallium arsenic mqw active layer successively, and formation limits heterostructure respectively;
Step 102: on epitaxial wafer, make ridge waveguide by lithography;
Step 103: deposit electric insulation layer on epitaxial wafer;
Step 104: on electric insulation layer, make fairlead by lithography;
Step 105: the fairlead place on the ridged platform makes optical grating construction by lithography;
Step 106: on epitaxial wafer, prepare p side electrode;
Step 107: N profile substrate is carried out preparing N face electrode behind the attenuated polishing;
The method flow diagram of the making edge-emission semiconductor laser that provides to the invention described above is below in conjunction with the sketch map of edge-emission semiconductor laser side direction section shown in Figure 1, to further explain of the present invention.
N type substrate described in the above-mentioned steps 101 is (100) face 15 ° of N types of < 111>direction drift angle gallium arsenic substrate 7 partially.Select this substrate for use; Adopt metal-organic chemical vapor deposition equipment (MOCVD) in epitaxial growth on the gallium arsenic substrate of N type drift angle light waveguide-layer 2, indium gallium arsenic mqw active layer 1 on light waveguide-layer 3, P type gallium aluminium arsenic upper limiting layer 4, the P type gallium aluminium arsenic under N type gallium aluminium arsenic lower limit layer 5, the N type gallium aluminium arsenic, heavily doped P type gallium arsenic ohmic contact layer 6.Select for use inclined to one side 15 ° of N types of < 111>direction drift angle of (100) face gallium arsenic substrate can suppress the formation of metastable state ordered structure in the growth course on the one hand; Can also improve P type magazine doping content in the limiting layer on the other hand, improve effective potential barrier of electronics, suppress the electronics of active area and reveal, help preparing high power semiconductor lasers.
Above-mentioned steps 102 comprises: with the full photoresist of spin coating on the epitaxial wafer, through developing the ridged table top is removed with the photoresist of exterior domain, utilized wet etching method to erode away the ridged table top again.
Above-mentioned steps 103 comprises: using plasma strengthens chemical vapour deposition technique (PECVD) deposit one deck electric insulation layer on epitaxial wafer, and this insulating barrier is a silicon dioxide layer.
Above-mentioned steps 104 comprises: on the ridged table top of the epitaxial wafer of growing good electric insulation layer, utilize the wet etching method to make fairlead by lithography, the width of above-mentioned fairlead should be littler than the width of ridged table top.
Above-mentioned steps 105 comprises: on fairlead, utilize the wet etching method to make the optical grating construction with periodic structure by lithography.
Above-mentioned steps 106 comprises with step 107: preparation p side electrode 9 and N face electrode 10 on epitaxial wafer; This electrode is to form good ohmic electrodes in contact material with gallium arsenic material; Described p side electrode adopts the method preparation of sputter, the method preparation of N face electrodes use evaporation.
This method can further include after step 107: the epitaxial wafer that will have electrode is separated slivering, on the preceding rear facet of laser, plates anti-reflection film and high-reflecting film respectively.So just, the power output of laser can be improved, the chamber face of laser can also be protected.
Prepare the semiconductor laser epitaxial wafer through above-mentioned steps; Sintering is on heat sink after the scribing, and encapsulation is fixed on the cooling base then, under 28 ℃ of temperature, tests; Obtain the output characteristic curve like Fig. 6, Fig. 5 is the output characteristic curve of the semiconductor laser of no-raster structure; The threshold current of semiconductor laser is reduced to 0.42A by 0.5A behind the employing optical grating construction, and its power output also improves.
Above-described specific embodiment has carried out further detailed description to the object of the invention, technical scheme and beneficial effect, should be understood that; The above is merely embodiments of the invention, is not limited to the present invention, and is all within spirit of the present invention and principle; Any modification of being made; Be equal to replacement, improve etc., all should be within protection range of the present invention.
Claims (1)
1. the edge-emission semiconductor laser with optical grating construction is characterized in that: comprise the epitaxial slice structure that substrate, N type limiting layer, N type ducting layer, MQW active area, P type ducting layer, P type limiting layer, P type ohmic contact layer constitute successively; And utilize wet etching with epitaxial wafer both sides corrosion P type ohmic contact layer to P type limiting layer, depth bounds is: 400nm-600nm, thereby formation ridged platform erode away on the ridged platform and have periodic optical grating construction.
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104051960A (en) * | 2014-05-29 | 2014-09-17 | 北京牡丹电子集团有限责任公司 | Edge-emitting semiconductor laser device with grating structure and manufacturing method thereof |
| CN104600565A (en) * | 2015-01-22 | 2015-05-06 | 中国科学院半导体研究所 | Gallium arsenide laser with low electronic leakage and manufacturing method thereof |
| CN105914580A (en) * | 2016-07-07 | 2016-08-31 | 北京工业大学 | Semiconductor laser with lateral grating and longitudinal bragg reflector structure |
| CN107069433A (en) * | 2017-06-20 | 2017-08-18 | 中国科学院半导体研究所 | GaN base ultraviolet laser wafer, chip of laser and laser and preparation method thereof |
| CN108011295A (en) * | 2016-10-31 | 2018-05-08 | 住友电工光电子器件创新株式会社 | Semiconductor laser diode with multi-quantum pit structure |
| CN109616869A (en) * | 2018-12-28 | 2019-04-12 | 西安立芯光电科技有限公司 | A kind of quasi-continuous semiconductor laser chip of high power |
| CN111769436A (en) * | 2020-07-07 | 2020-10-13 | 因林光电科技(苏州)有限公司 | Distributed feedback laser chip and preparation method thereof |
| CN112636162A (en) * | 2020-12-18 | 2021-04-09 | 勒威半导体技术(嘉兴)有限公司 | Packaging structure and packaging method of semiconductor laser |
| CN112688165A (en) * | 2020-12-25 | 2021-04-20 | 勒威半导体技术(嘉兴)有限公司 | Bar semiconductor laser capable of reducing threshold current and preparation method thereof |
| CN112713506A (en) * | 2020-12-25 | 2021-04-27 | 勒威半导体技术(嘉兴)有限公司 | Bar semiconductor laser and preparation method thereof |
| CN113206441A (en) * | 2021-04-30 | 2021-08-03 | 中国科学院半导体研究所 | Main oscillation power amplification laser and preparation method thereof |
| CN116387973A (en) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | Stable wavelength edge-emitting laser |
| TWI810653B (en) * | 2020-11-06 | 2023-08-01 | 日商三菱電機股份有限公司 | Optical semiconductor device and manufacturing method thereof |
| WO2023198225A1 (en) * | 2022-04-15 | 2023-10-19 | 苏州长光华芯光电技术股份有限公司 | Lateral optical mode control high power semiconductor device and preparation method therefor |
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| CN104051960A (en) * | 2014-05-29 | 2014-09-17 | 北京牡丹电子集团有限责任公司 | Edge-emitting semiconductor laser device with grating structure and manufacturing method thereof |
| CN104600565A (en) * | 2015-01-22 | 2015-05-06 | 中国科学院半导体研究所 | Gallium arsenide laser with low electronic leakage and manufacturing method thereof |
| CN104600565B (en) * | 2015-01-22 | 2017-08-25 | 中国科学院半导体研究所 | A kind of gallium arsenide laser with low electronics leakage and preparation method thereof |
| CN105914580A (en) * | 2016-07-07 | 2016-08-31 | 北京工业大学 | Semiconductor laser with lateral grating and longitudinal bragg reflector structure |
| CN105914580B (en) * | 2016-07-07 | 2019-01-29 | 北京工业大学 | Semiconductor laser with lateral grating and longitudinal bragg reflection mirror structure |
| CN108011295B (en) * | 2016-10-31 | 2021-02-12 | 住友电工光电子器件创新株式会社 | Semiconductor laser diode with multiple quantum well structure |
| CN108011295A (en) * | 2016-10-31 | 2018-05-08 | 住友电工光电子器件创新株式会社 | Semiconductor laser diode with multi-quantum pit structure |
| CN107069433A (en) * | 2017-06-20 | 2017-08-18 | 中国科学院半导体研究所 | GaN base ultraviolet laser wafer, chip of laser and laser and preparation method thereof |
| CN109616869A (en) * | 2018-12-28 | 2019-04-12 | 西安立芯光电科技有限公司 | A kind of quasi-continuous semiconductor laser chip of high power |
| CN111769436A (en) * | 2020-07-07 | 2020-10-13 | 因林光电科技(苏州)有限公司 | Distributed feedback laser chip and preparation method thereof |
| CN111769436B (en) * | 2020-07-07 | 2021-09-28 | 因林光电科技(苏州)有限公司 | Distributed feedback laser chip and preparation method thereof |
| TWI810653B (en) * | 2020-11-06 | 2023-08-01 | 日商三菱電機股份有限公司 | Optical semiconductor device and manufacturing method thereof |
| CN112636162A (en) * | 2020-12-18 | 2021-04-09 | 勒威半导体技术(嘉兴)有限公司 | Packaging structure and packaging method of semiconductor laser |
| CN112688165A (en) * | 2020-12-25 | 2021-04-20 | 勒威半导体技术(嘉兴)有限公司 | Bar semiconductor laser capable of reducing threshold current and preparation method thereof |
| CN112713506A (en) * | 2020-12-25 | 2021-04-27 | 勒威半导体技术(嘉兴)有限公司 | Bar semiconductor laser and preparation method thereof |
| CN113206441A (en) * | 2021-04-30 | 2021-08-03 | 中国科学院半导体研究所 | Main oscillation power amplification laser and preparation method thereof |
| WO2023198225A1 (en) * | 2022-04-15 | 2023-10-19 | 苏州长光华芯光电技术股份有限公司 | Lateral optical mode control high power semiconductor device and preparation method therefor |
| CN116387973A (en) * | 2023-06-05 | 2023-07-04 | 福建慧芯激光科技有限公司 | Stable wavelength edge-emitting laser |
| CN116387973B (en) * | 2023-06-05 | 2023-12-29 | 福建慧芯激光科技有限公司 | Stable wavelength edge-emitting laser |
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