CN104682195A - Edge emitting semiconductor laser with tunnel junction structure and preparation method thereof - Google Patents
Edge emitting semiconductor laser with tunnel junction structure and preparation method thereof Download PDFInfo
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- CN104682195A CN104682195A CN201510077277.9A CN201510077277A CN104682195A CN 104682195 A CN104682195 A CN 104682195A CN 201510077277 A CN201510077277 A CN 201510077277A CN 104682195 A CN104682195 A CN 104682195A
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Abstract
The invention relates to an edge emitting semiconductor laser with a tunnel junction structure. The edge emitting semiconductor laser comprises an N-surface electrode 1 and an epitaxial structure with the tunnel junction structure, wherein the two sides of the epitaxial structure with the tunnel junction structure are photo-etched to form a ridged table; an electric insulation layer 8 is deposited on the surface, where the ridged table is formed, of the epitaxial structure; a P-surface electrode 9 is laminated on the electric insulation layer. The edge emitting semiconductor laser with the tunnel junction structure, provided by the invention, has the advantages that loss of a cavity in a P-type limiting layer is reduced, and the injection efficiency of a charge carrier is improved, so that the device output power is improved; meanwhile, the problem of higher difficulty in P-type heavy doping of certain semiconductors is eliminated, and the working voltage of the device is reduced, so that the power conversion efficiency of the semiconductor laser is improved. The edge emitting semiconductor laser with the tunnel junction structure, provided by the invention, is widely applied to various material systems.
Description
Technical field
The present invention relates to field of semiconductor photoelectron technique, particularly relate to a kind of edge-emission semiconductor laser with tunnel junction structure and preparation method thereof.
Background technology
Semiconductor laser is developed so far the developing history of existing 60 years nearly, external or domesticly all in semiconductor epitaxial material, laser structure design, laser process preparation and device package etc., carried out systematic research in the meantime.The advantages such as semiconductor laser is lightweight with it, low price, life-span are long and easy of integration are widely used in the key areas such as optical fiber communication, machining, disc accessing, biomedicine, spectrum analysis and optical information processing.
Along with going deep into of research, in order to meet industry and military exigence further, the raising of semiconductor laser power and the reduction of operating voltage become the focus of research, and researchers have attempted a lot of ways for this reason.Early stage researcher improves metal and semiconductor contact by changing electrode material, thus realizes the raising of injection efficiency.Researcher improved contacting of metal and semiconductor by changing alloy temperature and time in technique afterwards.But these methods all cannot the hole loss of control P type ohmic contact largely, and the doping of the P type of some semi-conducting material is inherently very difficult, will realize good ohmic contact like this and just seem more difficult.Therefore new structure is badly in need of to realize the semiconductor laser with high injection efficiency and low-work voltage.
Summary of the invention
Technical problem to be solved by this invention is for the deficiencies in the prior art, a kind of edge-emission semiconductor laser with tunnel junction structure and preparation method thereof is provided, improve the injection efficiency of charge carrier and the operating voltage of device, reduce the threshold current of laser, improve power output and the electricity conversion of laser.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of edge-emission semiconductor laser with tunnel junction structure, comprise N face electrode, there is the epitaxial structure of tunnel junction structure, the epitaxial structure both sides that photoetching has tunnel junction structure form ridged platform, forming the epitaxial structure surface precipitation electric insulation layer of ridged platform, described electric insulation layer makes fairlead by lithography, stacked p side electrode on electric insulation layer.
The invention has the beneficial effects as follows: this edge-emission semiconductor laser with tunnel junction structure provided by the invention, decreases the loss in hole in P type limiting layer, improve the injection efficiency of charge carrier, thus improve the power output of device; Eliminate the problem that some semiconductor p-type heavy doping is comparatively difficult simultaneously, reduce the operating voltage of device, thus improve the power-conversion efficiencies of semiconductor laser.This edge-emission semiconductor laser with tunnel junction structure provided by the invention, is widely used in the edge-emission semiconductor laser of various material system.
On the basis of technique scheme, the present invention can also do following improvement.
Further, the epitaxial structure described in tunnel junction structure comprise stack gradually semiconductor substrate layer waveguiding structure region, tunnel junction structure and N-type ohmic contact layer.
Adopt the beneficial effect of above-mentioned further scheme: the introducing of described tunnel junction structure reduces the internal loss of device and the operating voltage of device; Described N-type ohmic contact layer and p side electrode form top electrode, define the edge-emission semiconductor laser with tunnel junction structure, due to the bad formation of P type ohmic contact of a lot of semi-conducting material, thus cut-in voltage can be caused to become large, but the N-type ohmic contact of semi-conducting material all can realize than being easier to, and finally reaches the effect of the cut-in voltage reducing device.
Further, described waveguiding structure region comprises the N-type limiting layer, N-type ducting layer, multi-quantum well active region, P type ducting layer and the P type limiting layer that stack gradually.
Further, the refractive index of limiting layer, ducting layer and multi-quantum well active region raises successively, thus laterally forming three layers of waveguiding structure, the light that multi-quantum well active region is sent is limited in multi-quantum well active region, wherein said limiting layer comprises N-type limiting layer and P type limiting layer, and described ducting layer comprises N-type ducting layer and P type ducting layer.
Adopt the beneficial effect of above-mentioned further scheme: what luminous energy was concentrated emits from active area, thus improves the Output optical power density of laser, facilitates the coupling output of laser power.
Further, described tunnel junction structure comprises the heavily doped layer of P type and the heavily doped layer of N-type that stack gradually.
Adopt the beneficial effect of above-mentioned further scheme: the hole concentration in P type ducting layer is improved greatly, improve the Carrier Injection Efficiency of device, improve slope efficiency and the power output of device.
Another technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of method preparing the edge-emission semiconductor laser with tunnel junction structure, comprises the steps:
Step 1, extension generates the epitaxial structure with tunnel junction structure;
Step 2, the epitaxial structure both sides that photoetching has tunnel junction structure form ridged platform;
Step 3, is forming the epitaxial structure surface precipitation electric insulation layer of ridged platform;
Step 4, electric insulation layer makes fairlead by lithography;
Step 5, electric insulation layer prepares p side electrode;
Step 6, carries out attenuated polishing process to the substrate of the epitaxial structure with tunnel junction structure, and then preparation N face electrode.
The invention has the beneficial effects as follows: the present invention merely add the number of plies in MOCVD epitaxy process on technique realizes, and adds tunnel junction structure, and N-type heavily doped layer, manufacture craft be simple, cost is low, reproducible.
On the basis of technique scheme, the present invention can also do following improvement.
Further, it is characterized in that, step 1 to be implemented as on semiconductor substrate layer extension waveguiding structure region, tunnel junction structure and N and type ohmic contact layer successively.
Further, described waveguiding structure region comprises the N-type limiting layer, N-type ducting layer, multi-quantum well active region, P type ducting layer and the P type limiting layer that stack gradually.
Further, the refractive index of limiting layer, ducting layer and multi-quantum well active region raises successively, thus laterally forming three layers of waveguiding structure, the light that multi-quantum well active region is sent is limited in multi-quantum well active region, wherein said limiting layer comprises N-type limiting layer and P type limiting layer, and described ducting layer comprises N-type ducting layer and P type ducting layer.
Further, described tunnel junction structure comprises the heavily doped layer of P type and the heavily doped layer of N-type that stack gradually.
Accompanying drawing explanation
Fig. 1 is a kind of side direction generalized section with the edge-emission semiconductor laser of tunnel junction structure of the present invention;
Fig. 2 is a kind of method flow diagram preparing the edge-emission semiconductor laser with tunnel junction structure of the present invention;
Fig. 3 is a kind of schematic perspective view with the edge-emission semiconductor laser of tunnel junction structure of the present invention
Fig. 4 of the present inventionly has the P-I-V characteristic curve of the edge-emission semiconductor laser of tunnel junction structure and the characteristic comparison diagram of P-I-V of common edge-emitting laser.
In accompanying drawing, the list of parts representated by each label is as follows:
1, N face electrode, 2, semiconductor substrate layer, 3, N-type limiting layer, 4, N-type ducting layer, 5, multi-quantum well active region, 6, P type ducting layer, 7, P type limiting layer, 8, electric insulation layer, 9, p side electrode, 10, N-type heavily doped layer, 11, P type heavily doped layer, 12, N-type ohmic contact layer, 13, fairlead, 14, tunnel junction structure, 15, window structure.
Embodiment
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1, a kind of edge-emission semiconductor laser with tunnel junction structure, comprise N face electrode 1, there is the epitaxial structure of tunnel junction structure, the epitaxial structure both sides that photoetching has tunnel junction structure form ridged platform, forming the epitaxial structure surface precipitation electric insulation layer 8 of ridged platform, described electric insulation layer 8 makes fairlead 13 by lithography, stacked p side electrode 9 on electric insulation layer.The introducing of tunnel junction structure described in the present invention inhibits the absorption loss of device inside, improves slope efficiency and the power output of device.In addition, for some semi-conducting material, the heavy doping of P type is more difficult.Therefore in P face, the more difficult formation of ohmic contact of metal electrode and semi-conducting material, thus make the operating voltage of device larger, the introducing of tunnel junction can utilize metal electrode and the heavily doped semi-conducting material of N-type to form good ohmic contact, thus reduce the operating voltage of device, thus improve the electricity conversion of device.
The described epitaxial structure with tunnel junction structure comprise stack gradually semiconductor substrate layer 2, waveguiding structure region, tunnel junction structure 14 and N-type ohmic contact layer 12.Described waveguiding structure region comprises the N-type limiting layer 3, N-type ducting layer 4, multi-quantum well active region 5, P type ducting layer 6 and the P type limiting layer 7 that stack gradually.Described tunnel junction structure 14 comprises the heavily doped layer 11 of the P type stacked gradually and the heavily doped layer 10 of N-type.The old bottom of described semiconductor adopts N type semiconductor substrate.
In the present embodiment, described electric insulation layer 8 adopts silicon dioxide insulating layer.
As shown in Figure 2, a kind of method preparing the edge-emission semiconductor laser with tunnel junction structure, comprises the steps:
Step 1, extension generates the epitaxial structure with tunnel junction structure.
Particularly, N-type gallium arsenic substrate is prepared N-type gallium aluminium arsenic limiting layer, N-type gallium aluminium arsenic light waveguide-layer, indium gallium arsenic or gallium arsenic mqw active layer, P type gallium aluminium arsenic light waveguide-layer, P type gallium aluminium arsenic limiting layer, P type gallium arsenic heavily doped layer, N-type gallium arsenic heavily doped layer, N-type gallium arsenic ohmic contact layer successively, wherein P type gallium arsenic heavily doped layer and N-type gallium arsenic heavily doped layer composition tunnel junction structure, define the epitaxial structure of the semiconductor laser with tunnel junction structure.Described n type semiconductor layer is 15 °, inclined <111> direction, (100) face N-type drift angle gallium arsenic substrate.Select the formation of metastable state ordered structure in the N-type drift angle gallium arsenic substrate one side energy Developing restraint process of 15 °, inclined <111> direction, (100) face; P type magazine doping content in limiting layer can also be improved on the other hand, improve effective potential barrier of electronics, suppress the electronics of active area to be revealed, be conducive to preparing high power semiconductor lasers.
Metal-organic chemical vapor deposition equipment (MOCVD) is adopted to carry out extension on the gallium arsenic substrate of N-type drift angle.
Step 2, the epitaxial structure both sides that photoetching has tunnel junction structure form ridged platform.
Particularly, by there is tunnel junction structure epitaxial structure on the full photoresist of spin coating, by development, ridged table top is removed with the photoresist of exterior domain, recycles wet etching method and erode away ridged table top.
Step 3, is forming the epitaxial structure surface precipitation electric insulation layer 8 of ridged platform.
Particularly, on the epitaxial structure with tunnel junction structure, using plasma strengthens chemical vapour deposition technique (PECVD) deposit one deck electric insulation layer 8, and this insulating barrier is silicon dioxide layer.
Step 4, electric insulation layer 8 makes by lithography fairlead 13.
Particularly, the ridged table top of the epitaxial structure of long good electric insulation layer 8 utilizes wet etching method to make fairlead 13 by lithography, and the width of above-mentioned fairlead 13 is less than the width of ridged table top.
Step 5, electric insulation layer prepares p side electrode.
Particularly, prepare p side electrode 9 having on tunnel junction structure, this p side electrode 9 is can form with N-type gallium arsenic material the electrode material that good ohmic contacts, and this p side electrode 9 thickness is generally more than 1um, and described p side electrode 9 adopts the method preparation of sputtering.
Step 6, carries out attenuated polishing process to the substrate of the epitaxial structure with tunnel junction structure, and then preparation N face electrode.
Particularly, in order to reduce the volume resistance of device, utilize the method for mechanical reduction by thinning on epitaxial wafer, thinning thickness is generally and epitaxial wafer is thinned to 120um-140um.Then prepare N face electrode 1, this N face electrode 1 be can form with N-type gallium arsenic material the electrode material that good ohmic contact, and this N face electrode 1 thickness is generally more than 1um, prepared by the method that described N face electrode 1 employing sputters.
As shown in Figure 3, the method can further include between step 2 and step 3: on the epitaxial structure with tunnel junction structure, make window structure 15 by lithography.
Particularly, by there is tunnel junction structure epitaxial structure on the full photoresist of spin coating, removed by the photoresist of window area 15 by development, recycling wet etching method erodes away window structure 15.
The method can further include between step 5 and step 6, and the epitaxial structure with tunnel junction structure of long good p side electrode makes cleavage line by lithography.
Particularly, because p side electrode 9 adopts thick gold process, conveniently follow-up cleavage process, needs to form cleavage line by photoetching.The epitaxial wafer of long good p side electrode 9 utilizes wet etching method to make cleavage line by lithography, and the width of above-mentioned cleavage line is 15um-25um.
The method can further include after step 6: will have the epitaxial wafer solution slivering of electrode, and before laser, rear facet plate anti-reflection film and high-reflecting film respectively.So just, the power output of laser can be improved, the face, chamber of laser can also be protected.
As shown in Figure 4, there is the edge-emission semiconductor laser P-I-V characteristic curve of tunnel junction structure and common edge-emitting laser comparison diagram, wherein solid line-I-V curve is the P-I-V curve of the edge-emission semiconductor laser with tunnel junction structure, dotted line-I-V curve is the P-I-V curve of the edge-emission semiconductor laser of ordinary construction, the threshold current as can be seen from the figure with the semiconductor laser of tunnel junction structure is less, cut-in voltage is less, and Output optical power is larger.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. one kind has the edge-emission semiconductor laser of tunnel junction structure, it is characterized in that, comprise N face electrode (1), there is the epitaxial structure of tunnel junction structure, the epitaxial structure both sides that photoetching has tunnel junction structure form ridged platform, forming the epitaxial structure surface precipitation electric insulation layer (8) of ridged platform, described electric insulation layer (8) makes fairlead (13) by lithography, the upper stacked p side electrode (9) of electric insulation layer (8).
2. a kind of edge-emission semiconductor laser with tunnel junction structure according to claim 1, it is characterized in that, described in there is tunnel junction structure epitaxial structure comprise stack gradually semiconductor substrate layer (2), waveguiding structure region, tunnel junction structure (14) and N-type ohmic contact layer (12).
3. a kind of edge-emission semiconductor laser with tunnel junction structure according to claim 2, it is characterized in that, described waveguiding structure region comprises the N-type limiting layer (3), N-type ducting layer (4), multi-quantum well active region (5), P type ducting layer (6) and the P type limiting layer (7) that stack gradually.
4. a kind of edge-emission semiconductor laser with tunnel junction structure according to claim 3, it is characterized in that, the refractive index of limiting layer, ducting layer and multi-quantum well active region (5) raises successively, thus laterally forming three layers of waveguiding structure, the light that multi-quantum well active region (5) is sent is limited in multi-quantum well active region (5), wherein said limiting layer comprises N-type limiting layer (3) and P type limiting layer (7), and described ducting layer comprises N-type ducting layer (4) and P type ducting layer (6).
5. a kind of edge-emission semiconductor laser with tunnel junction structure according to claim 2, it is characterized in that, described tunnel junction structure (14) comprises the heavily doped layer (11) of the P type stacked gradually and the heavily doped layer (10) of N-type.
6. prepare a method for the edge-emission semiconductor laser with tunnel junction structure, it is characterized in that, comprise the steps:
Step 1, extension generates the epitaxial structure with tunnel junction structure;
Step 2, the epitaxial structure both sides that photoetching has tunnel junction structure form ridged platform;
Step 3, is forming the epitaxial structure surface precipitation electric insulation layer of ridged platform;
Step 4: make fairlead by lithography on electric insulation layer;
Step 5, electric insulation layer prepares p side electrode;
Step 6, carries out attenuated polishing process to the substrate of the epitaxial structure with tunnel junction structure, and then preparation N face electrode.
7. a kind of method preparing the edge-emission semiconductor laser with tunnel junction structure according to claim 6, it is characterized in that, step 1 to be implemented as on semiconductor substrate layer extension waveguiding structure region, tunnel junction structure (14) and N and type ohmic contact layer (12) successively.
8. a kind of method preparing the edge-emission semiconductor laser with tunnel junction structure according to claim 7, it is characterized in that, described waveguiding structure region comprises the N-type limiting layer (3), N-type ducting layer (4), multi-quantum well active region (5), P type ducting layer (6) and the P type limiting layer (7) that stack gradually.
9. a kind of method preparing the edge-emission semiconductor laser with tunnel junction structure according to claim 8, it is characterized in that, the refractive index of limiting layer, ducting layer and multi-quantum well active region (5) raises successively, thus laterally forming three layers of waveguiding structure, the light that multi-quantum well active region (5) is sent is limited in multi-quantum well active region (5), wherein said limiting layer comprises N-type limiting layer (3) and P type limiting layer (7), and described ducting layer comprises N-type ducting layer (4) and P type ducting layer (6).
10. a kind of method preparing the edge-emission semiconductor laser with tunnel junction structure according to claim 7, it is characterized in that, described tunnel junction structure (14) comprises the heavily doped layer (11) of the P type stacked gradually and the heavily doped layer (10) of N-type.
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