CN111564758A - Low-loss silicon-based laser - Google Patents
Low-loss silicon-based laser Download PDFInfo
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- CN111564758A CN111564758A CN202010465149.2A CN202010465149A CN111564758A CN 111564758 A CN111564758 A CN 111564758A CN 202010465149 A CN202010465149 A CN 202010465149A CN 111564758 A CN111564758 A CN 111564758A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Abstract
A silicon-based laser comprising: an SOI pattern substrate containing a V-shaped bottom groove; the epitaxial structure sequentially comprises an N-type dislocation limiting layer, an N-type buffer layer, an N-type lower cladding layer, a lower waveguide layer, a quantum well active region, an upper waveguide layer, a P-type upper cladding layer, a tunnel junction, an N-type upper cladding layer and an N-type contact layer. The invention uses the tunneling effect of the tunnel junction, and the N-type doped region-the tunnel junction-the P-type doped region replaces the P-type doped region, so that the volume of the P-type doped region is reduced on the premise of meeting the requirements of stable working current and particle number inversion of the laser, the overlapping of an optical field and the P-type doped region can be effectively reduced, the internal loss of the laser is reduced, the laser lasing performance of the laser is optimized, and the realization of the electric pump lasing of the silicon-based laser is further promoted.
Description
Technical Field
The invention relates to the technical field of optical communication devices, in particular to a low-loss silicon-based laser.
Background
With the development of technology, integrated circuits have become an indispensable part of our lives, and our requirements are higher and higher. As the feature size of integrated circuits decreases, their cost, signal quality, bandwidth, power consumption, etc. cannot meet our further needs. Silicon-based optical interconnects are gradually favored by researchers due to the advantages of low delay, large bandwidth, low energy consumption, and the like. A complete optical interconnect contains light sources, waveguides, modulators, detectors, etc. At present, photonic devices such as waveguides, optical amplifiers, optical detectors, optical modulators and the like can be mature and applied. However, since silicon is an indirect bandgap, it is very difficult to directly emit laser light through silicon.
In recent years, the preparation schemes of silicon-based lasers are mainly divided into two categories: the light source is made of the four-group material and the compound thereof, and the light source device is made by introducing the III-V group compound. Until now, the preparation of light sources from group IV materials and their compounds has required a lot of work to achieve reasonably efficient room temperature lasing. The III-V group compound is a direct band gap, is widely used for manufacturing semiconductor lasers at present, and the semiconductor lasers are small in size, excellent in performance and mature in technology. Therefore, the introduction of III-V compound materials to manufacture light source devices is a feasible scheme.
At present, three methods are mainly used for preparing a silicon-based laser by introducing III-V compound materials: bonding, direct epitaxy, and high aspect ratio techniques. The bonding technique is to combine a group III-V laser and a silicon substrate by heating and pressurizing directly or via an intermediate layer, and to introduce the light of the laser into the silicon waveguide. The technology has the advantages of complex process, high requirement on production conditions, low yield and low repeatability, and is not beneficial to large-scale production. The direct epitaxy mode is that a thick buffer layer is epitaxially grown on a beveled substrate to filter dislocation, and then III-V compound materials are epitaxially grown to prepare the silicon-based laser. Due to the fact that a thick buffer layer needs to be grown between the III-V family material and the silicon substrate and the fact that the buffer layer has large defect density, coupling efficiency of the buffer layer into the silicon waveguide is low, and the silicon-based large-scale integrated light source is prepared through direct epitaxy. High Aspect Ratio (ART) technology enables high quality iii-v materials to be epitaxially grown on thin buffer layers at small local silicon substrate sites. In addition, the silicon-based laser prepared by the high aspect ratio technology can eliminate the anti-phase domain of the interface of silicon and III-V group compounds, limit dislocation, does not need substrate beveling, has high yield, thin buffer layer, convenient coupling, flexible device position selection and compatibility with CMOS, and is expected to realize silicon-based large-scale integrated light source.
At present, silicon-based III-V group nano lasers prepared by high aspect ratio technology realize photoinduced laser lasing, but further optimization of the structure is needed to reduce loss, reduce lasing threshold, improve laser performance, create good conditions for realizing laser electric pump lasing, and further realize product application. For silicon-based III-V group nano lasers, the aim of reducing internal loss can be achieved by diluting the waveguide, but the vertical dimension of the laser can be increased, so that the coupling of the laser and the waveguide and the further application development of the laser are not facilitated.
Disclosure of Invention
In view of the above, the main object of the present invention is to provide a low-loss silicon-based laser, which is intended to partially solve at least one of the above technical problems.
In order to achieve the above object, as an aspect of the present invention, there is provided a silicon-based laser including:
an SOI pattern substrate containing a V-shaped bottom groove;
the epitaxial structure sequentially comprises an N-type dislocation limiting layer, an N-type buffer layer, an N-type lower cladding layer, a lower waveguide layer, a quantum well active region, an upper waveguide layer, a P-type upper cladding layer, a tunnel junction, an N-type upper cladding layer and an N-type contact layer.
Wherein the SOI pattern substrate comprises top layer silicon with the thickness H not less than 500nm, is N-type doped, and has the doping concentration range of 1x1018cm-3～5x1018cm-3。
The silicon-based laser structure further comprises an N-type electrode, and the N-type electrode is positioned on the upper surface of the top layer silicon of the SOI pattern substrate with the V-shaped groove.
And all the structures in the epitaxial structure are III-V compound materials.
The tunnel junction in the epitaxial structure is a degenerated and heavily doped P-type and N-type III-V semiconductor tunnel junction structure or a non-heavily doped II-type energy band heterostructure with tunneling characteristics.
Wherein the doping concentration of the P-type upper cladding layer in the epitaxial structure is less than 1x1018cm-3It can adopt uniform doping or gradual doping.
And each part of the epitaxial structure is as wide as the V-shaped bottom.
Wherein the silicon-based laser further comprises an insulating layer and a P-type electrode.
Compared with the prior art, the silicon-based laser has at least part of the following beneficial effects:
the invention uses the tunneling effect of the tunnel junction, and the N-type doped region-the tunnel junction-the P-type doped region replaces the P-type doped region, so that the volume of the P-type doped region is reduced on the premise of meeting the requirements of stable working current and particle number inversion of the laser, the overlapping of an optical field and the P-type doped region can be effectively reduced, the internal loss of the laser is reduced, the laser lasing performance of the laser is optimized, and the realization of the electric pump lasing of the silicon-based laser is further promoted.
Drawings
Fig. 1 is a schematic structural cross-sectional view of a low-loss silicon-based laser device according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional view of a tunnel junction structure of a low-loss silicon-based laser according to an embodiment of the present invention.
In the above figures, the reference numerals have the following meanings:
1. SOI pattern substrate with V-shaped bottom; 2. An N-type dislocation confining layer; 3. An N-type buffer layer;
4. an N-type lower cladding layer; 5. A lower waveguide layer; 6. A quantum well active region; 7. An upper waveguide layer;
8. a P-type upper cladding layer; 9. A tunnel junction; 10. An N-type upper cladding layer; 11. An N-type contact layer;
12. an insulating layer; 13. A metal layer; 14. A P-type electrode; 15. An N-type electrode;
9.1, N-type semiconductor; 9.2, P-type semiconductor.
Detailed Description
At present, a V-shaped groove and SiO are formed through a silicon substrate2The selective epitaxy of the side wall structure can effectively reduce the defects of dislocation, anti-phase domain and the like and the thickness of the buffer layer, and SiO is removed by corrosion2The Si material near the sidewalls and V-grooves reduces leakage loss. At present, the silicon-based laser prepared by adopting a high aspect ratio technology realizes optical pumping, but a certain time is needed to realize the laser pumping, the structure of a device needs to be further optimized, and the difficulty of laser pumping in an electric pump state is reduced by improving the pumping performance.
The structure disclosed by the invention adopts the N-type doped region-tunnel junction-P-type doped region to replace the P-type doped region, electrons radiated and compounded in the valence band in the quantum well active region move into the valence band of the P-type doped region, and then tunnel into the conduction band of the N-type doped region through the tunnel junction, so that the stable working current of the device is maintained, the effective injection of holes into the active region is realized, the volume of the P-type doped region is reduced on the premise of meeting the inversion of the number of particles, the overlapping of an optical field and the P-type doped region can be effectively reduced, the internal loss of the laser is reduced, the lasing performance of the laser is optimized, and the lasing of the silicon-based electric pump laser is promoted. Meanwhile, the structure adopted by the invention has small influence on the size of the laser, is convenient for silicon-based coupling, and is suitable for interconnection of silicon-based photoelectrons and silicon-based light.
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
The invention discloses a low-loss silicon-based laser structure, the structural section of which is shown in figure 1, and the structure comprises:
an SOI patterned substrate having a V-shaped bottom trench;
the epitaxial structure sequentially comprises an N-type dislocation limiting layer, an N-type buffer layer, an N-type lower cladding layer, a lower waveguide layer, a quantum well active region, an upper waveguide layer, a P-type upper cladding layer, a tunnel junction, an N-type upper cladding layer and an N-type contact layer;
and the other device layers are an insulating layer and a P-type electrode.
In some embodiments of the present invention, the SOI substrate comprises a top silicon thicknessH is more than or equal to 500nm, is N-type doped, and has the doping concentration of 1x1018cm-3～5x1018cm-3。
In some embodiments of the present invention, the low-loss silicon-based laser structure further comprises an N-type electrode located on the top silicon upper surface of the SOI patterned substrate containing the V-shaped trench.
In some embodiments of the present invention, the epitaxial layer N-type dislocation confinement layer, the N-type buffer layer, the N-type lower cladding layer, the lower waveguide layer, the quantum well active region, the upper waveguide layer, the P-type upper cladding layer, the tunnel junction, the N-type upper cladding layer, and the N-type contact layer are all III-V group compound materials, which may specifically be: n-type GaAs dislocation limiting layer, N-type GaAs buffer layer, N-type InP lower cladding layer, intrinsic InP lower waveguide layer, quantum well active region (such as AlGaInAs/InP, InGaAsP/InP, InGaAs/InP, as long as quantum well and barrier materials are lattice-matched with InP), intrinsic InP upper waveguide layer, P-type InP upper cladding layer, tunnel junction, N-type InP upper cladding layer, and N-type InGaAs contact layer.
In some embodiments of the present invention, the tunnel junction of the epitaxial layer is a degenerate heavily doped P-type and N-type III-V semiconductor tunnel junction structure or a non-heavily doped II-type band heterostructure with tunneling characteristics, and specifically, as shown in the schematic cross-sectional view of the tunnel junction structure in fig. 2, the tunnel junction structure may be a heavily doped P-type InP layer and a heavily doped N-type InP layer. Electrons in the valence band of the heavily doped P-type semiconductor material can tunnel into the conduction band of the heavily doped N-type semiconductor material by utilizing the tunneling characteristics of the tunnel junction. Therefore, the low-loss silicon-based laser provided by the invention can effectively reduce the volume of a P-type doped region, reduce the internal loss of the laser, optimize the lasing performance of the silicon-based laser and further promote the electric pump lasing of the silicon-based laser under the condition that the device works at a stable current and meets the requirement of population inversion.
In some embodiments of the present invention, the doping concentration of the P-type upper cladding layer is less than 1 × 1018cm-3It can adopt uniform doping or gradual doping. The gradual doping enables the P-type upper cladding layer to form a built-in electric field, electrons in the P-type area have drift velocity and diffusion velocity, the tunneling probability is increased, and the injection efficiency of holes in the active area can be improved.
In some embodiments of the present invention, the N-type dislocation confinement layer, the N-type buffer layer, the N-type lower cladding layer, the lower waveguide layer, the quantum well active region, the upper waveguide layer, the P-type upper cladding layer, the tunnel junction, the N-type upper cladding layer, and the N-type contact layer are as wide as the V-shaped bottom portion.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A silicon-based laser, comprising:
an SOI pattern substrate containing a V-shaped bottom groove;
the epitaxial structure sequentially comprises an N-type dislocation limiting layer, an N-type buffer layer, an N-type lower cladding layer, a lower waveguide layer, a quantum well active region, an upper waveguide layer, a P-type upper cladding layer, a tunnel junction, an N-type upper cladding layer and an N-type contact layer.
2. The silicon-based laser as claimed in claim 1, wherein the SOI patterned substrate comprises a top silicon layer with a thickness H ≥ 500nm, and is N-type doped with a doping concentration in the range of 1 × 1018cm-3～5×1018cm-3。
3. The silicon-based laser of claim 1, wherein the silicon-based laser structure further comprises an N-type electrode located on the top silicon upper surface of the SOI patterned substrate containing the V-shaped trench.
4. The silicon-based laser of claim 1, wherein each partial structure in the epitaxial structure is a III-V compound material.
5. The silicon-based laser of claim 1, wherein the tunnel junction in the epitaxial structure is a degenerate heavily doped P-type and N-type III-V semiconductor tunnel junction structure or a non-heavily doped type II band heterostructure with tunneling properties.
6. The silicon-based laser of claim 1, wherein the doping concentration of the P-type upper cladding layer in the epitaxial structure is less than 1 × 1018cm-3It can adopt uniform doping or gradual doping.
7. The silicon-based laser of claim 1, wherein each partial structure in the epitaxial structure is as wide as the V-bottom.
8. The silicon-based laser of claim 1, further comprising an insulating layer and a P-type electrode.
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| CN202010465149.2A CN111564758A (en) | 2020-05-27 | 2020-05-27 | Low-loss silicon-based laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114336270A (en) * | 2020-09-30 | 2022-04-12 | 苏州华太电子技术有限公司 | Silicon-based semiconductor laser and manufacturing method thereof |
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Application publication date: 20200821 |