CN103259193B - A kind of 1300nm ~ 1550nm is containing the preparation method of the semiconductor laser of bismuthide - Google Patents
A kind of 1300nm ~ 1550nm is containing the preparation method of the semiconductor laser of bismuthide Download PDFInfo
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- CN103259193B CN103259193B CN201310176408.XA CN201310176408A CN103259193B CN 103259193 B CN103259193 B CN 103259193B CN 201310176408 A CN201310176408 A CN 201310176408A CN 103259193 B CN103259193 B CN 103259193B
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Abstract
The invention discloses the semiconductor laser of a kind of 1300nm ~ 1550nm containing bismuthide, comprise connect in turn transition zone, lower limit layer, lower waveguide layer, active area, upper ducting layer, electronic barrier layer, upper limiting layer, ohmic contact layer, its active area adopts the strained quantum well made by GaNAsBi/GaAs material system, P type AlGaAs is provided with P type AlGaAs electronic barrier layer between ducting layer and P type AlGaAs or GaInP upper limiting layer, between GaAs substrate and N-type AlGaAs or GaInP lower limit layer, is provided with N-type AlGaAs transition zone.Described semiconductor laser epitaxial structure grows on gaas substrates, there is the production cost lower than InP-base laser, there is higher characteristic temperature, charge carrier effectively can be stoped to overflow active area, can be generalized to the laser of the other types such as vertical cavity surface emitting laser.
Description
[technical field]
The present invention relates to semi-conductor photoelectronic field, particularly relate to a kind of 1300nm ~ 1550nm and contain semiconductor laser of bismuthide and preparation method thereof.
[background technology]
Modern telephone and data network rely on silicon optical fiber and transmit data on the optical fiber connecting transmission and receiving terminal.Because silicon optical fiber can overcome Dispersion Limitation wherein greatly in the optical band transmit optical signals centered by 1300nm ~ 1550nm especially 1310nm, therefore, the best effort wave band of existing local switched access fiber optic network is at 1310nm.The greatest difficulty that the development of optical fiber telecommunications system runs into is at light source.The international standard at communications loop networking is that laser diode or other equivalent photocells establish harsh technical parameter.These parameters comprise: threshold current, and in this value, diode starts to produce laser; Differential quantum efficency; Optical output power under operating current condition; Operating temperature range extends to more than 85 DEG C, not need complexity, expensive refrigerator.
At present, business-like 1300nm ~ 1550nm especially 1310nm semiconductor laser with InGaAsP/InP material system for main flow.Although its performance improves year by year, be still difficult to more than 85 DEG C without refrigeration work.In order to address this problem, other two kinds of substitution material systems covering 1300nm ~ 1550nm especially 1310nm wave band are developed: InGaNAs/GaAs, InAlGaAs/InP.So far, for InGaNAs/GaAs material system, the component of N brought up to 10% still very difficult, and mix atom N and easily introduce defect, the laser therefore based on this material system is also in foundation phase.For InAlGaAs/InP material system, as everyone knows, the oxidation rate that Al atom is higher not only can increase the difficulty of growth technique, also can bring higher non-radiative recombination speed, cause laser performance to worsen.Therefore active area is second to active area without Al laser containing the life and reliability of Al laser.
As a kind of novel quaternary alloy material, research finds that GaNAsBi material not only covers 1300nm ~ 1550nm especially 1310nm wave band of optical fiber communication, and can the energy gap of this material of independent regulation and lattice constant.The conduction band band rank ratio (Δ Ec/ Δ Eg ≈ 0.7) of GaNAsBi material, than the height of InGaAsP, is conducive to the threshold current reducing laser, and improves characteristic temperature.Especially, the energy gap size of GaNAsBi is extremely insensitive to temperature, and the laser based on this material has splendid temperature characterisitic, and this makes it in WDM optical fiber telecommunications system, have much application prospect.As can be seen here, beyond doubt a kind of excellent material realizing 1300nm ~ 1550nm especially 1310nm uncooled laser of GaNAsBi.
[summary of the invention]
For the deficiency of existing semiconductor laser, an object of the present invention is to propose the semiconductor laser of a kind of 1300nm ~ 1550nm containing bismuthide.This semiconductor laser is using the GaNAsBi/GaAs strained quantum well without Al as active area, can realize, to effective restriction of injecting charge carrier, there is higher characteristic temperature, extremely low temperature coefficient, can realize without refrigeration work, improve laser life-span and reliability simultaneously.
Another object of the present invention is to the preparation method of the 1300nm ~ 1550nm described in proposing containing the semiconductor laser of bismuthide.
For achieving the above object, the technical solution adopted for the present invention to solve the technical problems is:
Described 1300nm ~ 1550nm containing bismuthide semiconductor laser from comprise connect in turn transition zone, lower limit layer, lower waveguide layer, active area, upper ducting layer, electronic barrier layer, upper limiting layer, ohmic contact layer, wherein, described active area adopts the strained quantum well made by GaNAsBi/GaAs material system.
As a kind of preferred implementation: the strained quantum well made by GaNAsBi/GaAs material system is totally 3 cycles, using GaAs barrier layer, GaNAsBi, as potential well layer, forms the compressive strain of 1% with GaAs, wherein the component of N is the component of 1.68%, Bi is 2.38%.
Preferably, described 1300nm ~ 1550nm contains the semiconductor laser epitaxial growth of bismuthide on gaas substrates.
Preferably, described transition zone is N-type AlGaAs transition zone, and between described GaAs substrate and described lower limit layer, the content gradually variational scope of Al is from 0.1% to 10%.
Preferably, described lower limit layer is N-type AlGaAs lower limit layer, is made up of N-type AlGaAs layer, and the component of Al is 15%.
Corresponding, described upper limiting layer is P type AlGaAs upper limiting layer, is made up of P type AlGaAs layer, and the component of Al is 15%.
Preferably, described lower limit layer is N-type GaInP lower limit layer, is made up of N-type GaInP layer, and the component of Ga is 52%.
Corresponding, described upper limiting layer is P type GaInP upper limiting layer, is made up of P type GaInP layer, and the component of Ga is 52%.
Preferably, described lower waveguide layer is AlGaAs lower waveguide layer, and adopt graded index limiting structure respectively, the content gradually variational scope of Al is from 15% to 0.1%.
Preferably, described upper ducting layer is ducting layer on AlGaAs, and adopt graded index limiting structure respectively, the content gradually variational scope of Al is from 0.1% to 15%.
Preferably, described electronic barrier layer is P type AlGaAs electronic barrier layer, and on described AlGaAs between ducting layer and described upper limiting layer, the component of Al is 40%.
Preferably, described ohmic contact layer is P type GaAs ohmic contact layer.
Described 1300nm ~ 1550nm is containing the preparation method of the semiconductor laser of bismuthide, and it is characterized in that, the method comprises the following steps:
Step one: described 1300nm ~ 1550nm grows successively in the following order containing the semiconductor laser of bismuthide:
(1): at N-type GaAs Grown N-type AlGaAs transition zone;
(2): growth N-type AlGaAs or GaInP lower limit layer;
(3): growth AlGaAs lower waveguide layer;
(4): growing GaN AsBi/GaAs strained quantum well active area;
(5): ducting layer on growth AlGaAs;
(6): growing P-type AlGaAs electronic barrier layer;
: grow the P type AlGaAs upper limiting layer corresponding with described N-type AlGaAs lower limit layer, or the P type GaInP upper limiting layer corresponding with described N-type GaInP lower limit layer (7);
(8): growing P-type GaAs ohmic contact layer;
Step 2: described 1300nm ~ 1550nm is prepared by following processing step containing the semiconductor laser of bismuthide:
After growth structure described in completing steps one, first by electron beam evaporation deielectric-coating, form P-type electrode window, then thermal evaporation Au/Zn/Au through conventional photoetching, etching process again, form P type Ohm contact electrode, then the thinning rear evaporation Au/Ge/Ni of N surface chemistry, form N-type ohmic contact layer, then form chip of laser through cleavage, then chip is sintered to heat sink on, through lead-in wire, obtain target laser.
Preferably, described N-type AlGaAs transition zone, comprises the N-type doped with Al GaAs layer of content gradually variational;
Preferably, described N-type AlGaAs or GaInP lower limit layer, comprise N-type doped with Al GaAs or GaInP layer;
Preferably, described AlGaAs lower waveguide layer, comprises the undoped AlGaAs layer of content gradually variational;
Preferably, described GaNAsBi/GaAs strained quantum well active area, comprises spaced 4 GaAs undoped barrier layers and 3 GaNAsBi undoped potential well layers successively, forms 3 cyclic strains quantum well structures;
Preferably, ducting layer on described AlGaAs, comprises the non-doped layer AlGaAs of content gradually variational;
Preferably, described P type AlGaAs electronic barrier layer, comprises P type doped with Al GaAs layer;
Preferably, the P type AlGaAs upper limiting layer that described and described N-type AlGaAs lower limit layer is corresponding, comprises P type doped with Al GaAs layer, or the P type GaInP upper limiting layer that described and described N-type GaInP lower limit layer is corresponding, comprises P type doping GaInP layer;
Preferably, described P type GaAs ohmic contact layer, comprises P type heavy doping GaAs ohmic contact layer.
Preferably, described 1300nm ~ 1550nm is formed by mocvd method or the growth of MBE method containing the semiconductor laser extension of bismuthide.
Concrete, if the semiconductor laser extension that described 1300nm ~ 1550nm contains bismuthide is formed by mocvd method growth, then N-type impurity atom is Si, Se, S or Te, and P type foreign atom is Zn, Mg or C; If the semiconductor laser extension that described 1300nm ~ 1.55 μm contain bismuthide is formed by the growth of MBE method, then N-type foreign atom is Si, Se, S, Sn or Te, and P type foreign atom is Be, Mg or C.
Compared with existing laser, tool of the present invention has the following advantages:
1,1300nm ~ 1550nm of the present invention can realize, to effective restriction of injecting charge carrier, having higher characteristic temperature, extremely low temperature coefficient containing the semiconductor laser of bismuthide, realizes without refrigeration work;
2,1300nm ~ 1550nm of the present invention grows on gaas substrates containing the semiconductor laser extension of bismuthide, has the production cost lower than InP-base laser;
3,1300nm ~ 1550nm of the present invention can be compatible with GaAs/AlAs Bragg reflector containing the active area structure of the semiconductor laser of bismuthide, can be applicable to vertical cavity surface emitting laser;
4,1300nm ~ 1550nm of the present invention is containing the semiconductor laser employing of bismuthide without the active area of Al, reduces growth technique difficulty, improves laser life-span and reliability;
5,1300nm ~ 1550nm of the present invention introduces electronic barrier layer containing the semiconductor laser of bismuthide between upper ducting layer and upper limiting layer, can effectively stop charge carrier to overflow from active area, and then reduces threshold current, improves gain;
6,1300nm ~ 1550nm of the present invention introduces transition zone containing the semiconductor laser of bismuthide between substrate and lower limit layer, can improve Carrier Injection Efficiency, reduce threshold current further.
[accompanying drawing explanation]
Fig. 1 is the structure chart of 1300nm ~ 1550nm of providing of the embodiment of the present invention containing the semiconductor laser of bismuthide.
Comprise: N-type GaAs substrate 01, N-type AlGaAs transition zone 02, N-type AlGaAs(or GaInP) lower limit layer 03, AlGaAs lower waveguide layer 04, GaAs undoped barrier layer 05, GaNAsBi undoped potential well layer 06, GaNAsBi/GaAs strained quantum well active area 07, the upper ducting layer 08 of AlGaAs, P type AlGaAs electronic barrier layer 09, P type AlGaAs(or GaInP) upper limiting layer 10, P type GaAs contact layer 11, and:
N-type AlGaAs transition zone comprises the N-type doped with Al GaAs layer 02 of content gradually variational;
N-type AlGaAs(or GaInP) lower limit layer comprises N-type doped with Al GaAs(or GaInP) layer 03;
AlGaAs lower waveguide layer comprises the undoped AlGaAs layer 04 of content gradually variational;
GaNAsBi/GaAs strained quantum well active area comprises spaced 4 GaAs undoped barrier layers 05 and 3 GaNAsBi undoped potential well layers 06 successively, forms 3 cyclic strains quantum well structures 07;
The upper ducting layer of AlGaAs comprises the non-doped layer AlGaAs08 of content gradually variational;
P type AlGaAs electronic barrier layer comprises P type doped with Al GaAs layer 09;
P type AlGaAs(or GaInP) upper limiting layer comprises P type doped with Al GaAs(or GaInP) layer 10;
P type GaAs ohmic contact layer comprises P type heavy doping GaAs ohmic contact layer 11.
[embodiment]
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that described herein is only a part of embodiment of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite not making creative work, all belongs to the scope of protection of the invention.
An object of the present invention is to propose the semiconductor laser of a kind of 1300nm ~ 1550nm containing bismuthide, and for achieving the above object, the technical solution adopted for the present invention to solve the technical problems is:
Described 1300nm ~ 1550nm containing bismuthide semiconductor laser from comprise connect in turn transition zone, lower limit layer, lower waveguide layer, active area, upper ducting layer, electronic barrier layer, upper limiting layer, ohmic contact layer, wherein, described active area adopts the strained quantum well made by GaNAsBi/GaAs material system.
As a kind of preferred implementation: the strained quantum well made by GaNAsBi/GaAs material system is totally 3 cycles, using GaAs barrier layer, GaNAsBi, as potential well layer, forms the compressive strain of 1% with GaAs, wherein the component of N is the component of 1.68%, Bi is 2.38%.
Preferably, described 1300nm ~ 1550nm contains the semiconductor laser epitaxial growth of bismuthide on gaas substrates.
Preferably, described transition zone is N-type AlGaAs transition zone, and between described GaAs substrate and described lower limit layer, the content gradually variational scope of Al is from 0.1% to 10%.
Preferably, described lower limit layer is N-type AlGaAs lower limit layer, is made up of N-type AlGaAs layer, and the component of Al is 15%.
Corresponding, described upper limiting layer is P type AlGaAs upper limiting layer, is made up of P type AlGaAs layer, and the component of Al is 15%.
Preferably, described lower limit layer is N-type GaInP lower limit layer, is made up of N-type GaInP layer, and the component of Ga is 52%.
Corresponding, described upper limiting layer is P type GaInP upper limiting layer, is made up of P type GaInP layer, and the component of Ga is 52%.
Preferably, described lower waveguide layer is AlGaAs lower waveguide layer, and adopt graded index limiting structure respectively, the content gradually variational scope of Al is from 15% to 0.1%.
Preferably, described upper ducting layer is ducting layer on AlGaAs, and adopt graded index limiting structure respectively, the content gradually variational scope of Al is from 0.1% to 15%.
Preferably, described electronic barrier layer is P type AlGaAs electronic barrier layer, and on described AlGaAs between ducting layer and described upper limiting layer, the component of Al is 40%.
Preferably, described ohmic contact layer is P type GaAs ohmic contact layer.
Described 1300nm ~ 1550nm is containing the preparation method of the semiconductor laser of bismuthide, and it is characterized in that, the method comprises the following steps:
Step one: described 1300nm ~ 1550nm grows successively in the following order containing the semiconductor laser of bismuthide:
(1): at N-type GaAs Grown N-type AlGaAs transition zone;
(2): growth N-type AlGaAs or GaInP lower limit layer;
(3): growth AlGaAs lower waveguide layer;
(4): growing GaN AsBi/GaAs strained quantum well active area;
(5): ducting layer on growth AlGaAs;
(6): growing P-type AlGaAs electronic barrier layer;
: grow the P type AlGaAs upper limiting layer corresponding with described N-type AlGaAs lower limit layer, or the P type GaInP upper limiting layer corresponding with described N-type GaInP lower limit layer (7);
(8): growing P-type GaAs ohmic contact layer;
Step 2: described 1300nm ~ 1550nm is prepared by following processing step containing the semiconductor laser of bismuthide:
After growth structure described in completing steps one, first by electron beam evaporation deielectric-coating, form P-type electrode window, then thermal evaporation Au/Zn/Au through conventional photoetching, etching process again, form P type Ohm contact electrode, then the thinning rear evaporation Au/Ge/Ni of N surface chemistry, form N-type ohmic contact layer, then form chip of laser through cleavage, then chip is sintered to heat sink on, through lead-in wire, obtain target laser.
Preferably, described N-type AlGaAs transition zone, comprises the N-type doped with Al GaAs layer of content gradually variational;
Preferably, described N-type AlGaAs or GaInP lower limit layer, comprise N-type doped with Al GaAs or GaInP layer;
Preferably, described AlGaAs lower waveguide layer, comprises the undoped AlGaAs layer of content gradually variational;
Preferably, described GaNAsBi/GaAs strained quantum well active area, comprises spaced 4 GaAs undoped barrier layers and 3 GaNAsBi undoped potential well layers successively, forms 3 cyclic strains quantum well structures;
Preferably, ducting layer on described AlGaAs, comprises the non-doped layer AlGaAs of content gradually variational;
Preferably, described P type AlGaAs electronic barrier layer, comprises P type doped with Al GaAs layer;
Preferably, the P type AlGaAs upper limiting layer that described and described N-type AlGaAs lower limit layer is corresponding, comprises P type doped with Al GaAs layer, or the P type GaInP upper limiting layer that described and described N-type GaInP lower limit layer is corresponding, comprises P type doping GaInP layer;
Preferably, described P type GaAs ohmic contact layer, comprises P type heavy doping GaAs ohmic contact layer.
Preferably, described 1300nm ~ 1550nm is formed by mocvd method or the growth of MBE method containing the semiconductor laser extension of bismuthide.
Concrete, if the semiconductor laser extension that described 1300nm ~ 1550nm contains bismuthide is formed by mocvd method growth, then N-type impurity atom is Si, Se, S or Te, and P type foreign atom is Zn, Mg or C; If described 1300nm ~ 1550nm is formed by the growth of MBE method containing the semiconductor laser extension of bismuthide, then N-type foreign atom is Si, Se, S, Sn or Te, and P type foreign atom is Be, Mg or C.
Embodiment one: as Fig. 1, when adopting AlGaAs upper and lower limit preparative layer, the preparation method that described 1300nm ~ 1.55 μm contain the semiconductor laser of bismuthide comprises the following steps:
(1) with the semiconductor laser of the 1300nm ~ 1550nm described in the growth of MOCVD method containing bismuthide, its structure as shown in Figure 1:
(1) grow N-type doping at N-type GaAs substrate 01 and be about 2 × 10
18cm
-30.05 micron of AlGaAs layer, Al component by 0.1% gradual change to 10%, formed transition zone 02;
(2) N-type doping about 2 × 10 is grown
18cm
-30.2 micron of AlGaAs layer, Al component is 15%, formed lower limit layer 03;
(3) grow 0.1 micron of AlGaAs content gradually variational layer of undoped, Al component, by 15% gradual change to 0.1%, forms lower waveguide layer 04;
(4) the GaNAsBi potential well layer 06 (3) of alternating growth 10 nanometer GaAs barrier layer 05 (4) and 5.5 nanometer 1% compressive strain, wherein N component is about 1.68%, Bi component is about 2.38%, form 3 cyclic strains quantum well structures, form the active area 07 of described laser;
(5) grow 0.1 micron of AlGaAs content gradually variational layer of undoped, Al component by 0.1% gradual change to 15%, ducting layer 08 in formation;
(6) growing P-type doping content is about 3 × 10
18cm
-30.01 micron of AlGaAs layer, Al component is 40%, formed electronic barrier layer 09;
(7) growing P-type doping content is about 3 × 10
18cm
-3the AlGaAs layer of 0.2 micron, Al component is 15%, formed upper limiting layer 10;
(8) then growing P-type doping content is about 2 × 10
19cm
-3the P type GaAs ohmic contact layer 11 of 0.2 micron.
(2) preparation technology
After completing said structure, by the SiO of electron beam evaporation 0.1 micron
2deielectric-coating, then form P-type electrode window (width is 200 microns), then thermal evaporation Au/Zn/Au through conventional photoetching, etching process, form P type Ohm contact electrode.N surface chemistry evaporates Au/Ge/Ni after being thinned to about 100 microns, forms N-type ohmic contact layer.Alloy temperature is 420 DEG C, and alloying atmosphere is H
2.Through cleavage formed chip of laser, then chip is sintered to heat sink on, through lead-in wire, obtain target laser.
Embodiment 2: as Fig. 1, when adopting GaInP as upper and lower limit preparative layer, the preparation method that described 1300nm ~ 1.55 μm contain the semiconductor laser of bismuthide comprises the following steps:
(1) with the semiconductor laser of MOCVD method growth 1300nm ~ 1550nm containing bismuthide, its structure as shown in Figure 1:
(1) grow N-type doping at N-type GaAs substrate 01 and be about 2 × 10
18cm
-30.05 micron of AlGaAs layer, Al component by 0.1% gradual change to 10%, formed transition zone 02;
(2) N-type doping about 2 × 10 is grown
18cm
-30.2 micron of GaInP layer, the component of Ga is 52%, formed lower limit layer 03;
(3) grow 0.1 micron of AlGaAs content gradually variational layer of undoped, Al component, by 15% gradual change to 0.1%, forms lower waveguide layer 04;
(4) the GaNAsBi potential well layer 06 (3) of alternating growth 10 nanometer GaAs barrier layer 05 (4) and 5.5 nanometer 1% compressive strain, wherein the component of N is about 1.68%, the component of Bi is about 2.38%, form 3 cyclic strains quantum well structures, form the active area 07 of described laser;
(5) grow 0.1 micron of AlGaAs content gradually variational layer of undoped, Al component by 0.1% gradual change to 15%, ducting layer 08 in formation;
(6) growing P-type doping content is about 3 × 10
18cm
-30.01 micron of AlGaAs layer, the component of Al is 40%, formed electronic barrier layer 09;
(7) growing P-type doping content is about 3 × 10
18cm
-3the GaInP layer of 0.2 micron, the component of Ga is 52%, formed upper limiting layer 10;
(8) then growing P-type doping content is about 2 × 10
19cm
-3the P type GaAs ohmic contact layer 11 of 0.2 micron.
(2) preparation technology
After completing said structure, by the SiO of electron beam evaporation 0.1 micron
2deielectric-coating, then form P-type electrode window (width is 200 microns), then thermal evaporation Au/Zn/Au through conventional photoetching, etching process, form P type Ohm contact electrode.N surface chemistry evaporates Au/Ge/Ni after being thinned to about 100 microns, forms N-type ohmic contact layer.Alloy temperature is 420 DEG C, and alloying atmosphere is H
2.Through cleavage formed chip of laser, then chip is sintered to heat sink on, through lead-in wire, obtain target laser.
Through the above description of the embodiments, those skilled in the art can be well understood to dimension disclosed by the invention and value and is not intended to be used to strictly be limited to described exact value.On the contrary, except as otherwise noted, each such dimension and value are intended to the scope stating described value and be functionally equal to around this value.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should look protection scope of the present invention.
Claims (3)
1. 1300nm ~ 1550nm is containing a preparation method for the semiconductor laser of bismuthide, it is characterized in that, comprises the following steps:
Step one:
(1) 2 × 10 are about in the doping of N-type GaAs substrate (01) growth N-type
18cm
-30.05 micron of AlGaAs layer, Al component by 0.1% gradual change to 10%, formed transition zone (02);
(2) N-type doping about 2 × 10 is grown
18cm
-30.2 micron of AlGaAs layer, Al component is 15%, formed lower limit layer (03);
(3) grow 0.1 micron of AlGaAs content gradually variational layer of undoped, Al component, by 15% gradual change to 0.1%, forms lower waveguide layer (04);
(4) the GaNAsBi potential well layer (06) of alternating growth 4 10 nanometer GaAs barrier layers (05) and 3 5.5 nanometer 1% compressive strain, wherein N component is about 1.68%, Bi component is about 2.38%, form 3 cyclic strains quantum well structures, form the active area (07) of described laser;
(5) grow 0.1 micron of AlGaAs content gradually variational layer of undoped, Al component by 0.1% gradual change to 15%, ducting layer (08) in formation;
(6) growing P-type doping content is about 3 × 10
18cm
-30.01 micron of AlGaAs layer, Al component is 40%, formed electronic barrier layer (09);
(7) growing P-type doping content is about 3 × 10
18cm
-3the AlGaAs layer of 0.2 micron, Al component is 15%, formed upper limiting layer (10);
(8) then growing P-type doping content is about 2 × 10
19cm
-3the P type GaAs ohmic contact layer (11) of 0.2 micron;
(2) preparation technology
After completing said structure, by the SiO of electron beam evaporation 0.1 micron
2deielectric-coating, P-type electrode window is formed again through conventional photoetching, etching process, wherein, window width is 200 microns, then thermal evaporation Au/Zn/Au, forms P type Ohm contact electrode, N surface chemistry evaporates Au/Ge/Ni after being thinned to about 100 microns, form N-type ohmic contact layer, alloy temperature is 420 DEG C, and alloying atmosphere is H
2, through cleavage formed chip of laser, then chip is sintered to heat sink on, through lead-in wire, obtain target laser.
2. 1300nm ~ 1550nm as claimed in claim 1 is containing the preparation method of the semiconductor laser of bismuthide, it is characterized in that, described 1300nm ~ 1550nm is formed by mocvd method or the growth of MBE method containing the semiconductor laser extension of bismuthide.
3. 1300nm ~ 1550nm as claimed in claim 2 is containing the preparation method of the semiconductor laser of bismuthide, it is characterized in that:
If described 1300nm ~ 1550nm is formed by mocvd method growth containing the semiconductor laser extension of bismuthide, then N-type foreign atom is Si, Se, S or Te, and P type foreign atom is Zn, Mg or C;
If described 1300nm ~ 1550nm is formed by the growth of MBE method containing the semiconductor laser extension of bismuthide, then N-type foreign atom is Si, Se, S, Sn or Te, and P type foreign atom is Be, Mg or C.
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| CN103280695B (en) * | 2013-05-28 | 2016-04-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Long wavelength GaNAsBi/GaAs multiple quantum well laser and preparation method thereof |
| CN103779456A (en) * | 2014-01-26 | 2014-05-07 | 南通明芯微电子有限公司 | Method for manufacturing N type GaAs-based semiconductor light emitting diode |
| CN104037618B (en) * | 2014-04-22 | 2017-01-18 | 吉林农业大学 | GaAs-based near-infrared band Sb multi-layer quantum dot and asymmetric quantum well coupled laser structure |
| CN106785912B (en) * | 2016-05-26 | 2020-04-10 | 杭州增益光电科技有限公司 | Semiconductor laser and method for manufacturing the same |
| CN107910388B (en) * | 2017-06-30 | 2020-11-13 | 超晶科技（北京）有限公司 | Semiconductor material containing bismuth and nitrogen compound, preparation method and all-band photoelectric device |
| CN110783812A (en) * | 2019-11-21 | 2020-02-11 | 江苏索尔思通信科技有限公司 | InP-based semiconductor laser structure with low contact resistance and preparation method thereof |
| CN114142343B (en) * | 2020-09-04 | 2024-01-02 | 山东华光光电子股份有限公司 | Low-power AlGaInP red light semiconductor laser with optimized graded waveguide layer and preparation method thereof |
| CN114400506B (en) * | 2022-01-17 | 2024-01-12 | 光为科技(广州)有限公司 | Semiconductor laser and method for manufacturing the same |
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