WO2018184287A1 - Porous dbr- and ingan-based enhanced detector chip having resonant cavity - Google Patents

Porous dbr- and ingan-based enhanced detector chip having resonant cavity Download PDF

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WO2018184287A1
WO2018184287A1 PCT/CN2017/086854 CN2017086854W WO2018184287A1 WO 2018184287 A1 WO2018184287 A1 WO 2018184287A1 CN 2017086854 W CN2017086854 W CN 2017086854W WO 2018184287 A1 WO2018184287 A1 WO 2018184287A1
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layer
type gan
ingan
dbr
gan layer
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Chinese (zh)
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赵丽霞
刘磊
杨超
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中国科学院半导体研究所
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Priority to US16/500,025 priority Critical patent/US10964829B2/en
Publication of WO2018184287A1 publication Critical patent/WO2018184287A1/en

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    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
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    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor

Definitions

  • the present disclosure relates to a vertical cavity cavity cavity enhanced photodetector, and more particularly to an InGaN-based vertical cavity surface cavity enhanced detector chip based on a porous Bragg mirror (DBR).
  • DBR porous Bragg mirror
  • GaN-based devices have unique advantages in UV and visible light applications.
  • GaN-based materials have excellent thermal and chemical stability and are highly resistant to radiation, making GaN-based optoelectronic devices suitable for operation under extreme conditions.
  • GaN-based materials also have high electron drift speeds, which facilitate the fabrication of high-frequency photodetector devices.
  • InGaN visible light detectors from the integration of visible light communication systems, InGaN-based detectors and light-emitting terminals commonly used in visible light communication, InGaN/GaN quantum well light-emitting diodes, the same in the material system, and the preparation process Compatible, so it has great potential.
  • the InGaN-based visible light detector is still far from the visible light detector such as Si-based in the performance level of the device, which is mainly reflected in the low quantum efficiency.
  • a common method of increasing quantum efficiency is to increase the thickness of the absorber layer.
  • InGaN materials it is very difficult to epitaxially obtain thick layers of InGaN on GaN, and there are often problems such as phase separation, In polymerization, high background carrier concentration, and material unevenness in the nanometer range. These problems are in the high In group.
  • the thick layer of InGaN is more severe.
  • a common solution is to fabricate an InGaN/GaN superlattice structure to relieve stress in each layer and suppress phase separation, thereby increasing the effective thickness of InGaN.
  • the effective thickness of the InGaN layer obtained by this method is still limited.
  • increasing the quantum efficiency of the detector by increasing the thickness of the absorber layer increases the drift time of the photogenerated carriers in the absorber layer and limits the response speed of the detector.
  • the present disclosure provides a porous DBR-based InGaN-based resonator-enhanced detector chip, comprising:
  • n-type GaN layer is formed on an upper surface of the bottom porous DBR layer, one side of the n-type GaN layer is formed downward with a mesa, and the other side is a protrusion, and the depth of the mesa is smaller than the n-type The thickness of the GaN layer;
  • a p-type GaN layer formed on an upper surface of the active region
  • a sidewall passivation layer which is an insulating medium, is formed on an upper surface of the p-type GaN layer portion and a raised n-type GaN layer, an active region, and a sidewall of the p-type GaN layer, and covers a portion of the n-type mesa a surface having a window in the middle of the sidewall passivation layer on the upper surface of the p-type GaN layer;
  • a transparent conductive layer formed on the sidewall passivation layer and the upper surface of the p-type GaN layer at the window;
  • a p-electrode formed around the upper surface of the sidewall passivation layer and covering a portion of the transparent conductive layer
  • a top dielectric DBR layer is formed on the transparent conductive layer and the upper surface of the p-electrode.
  • the beneficial effects of the present disclosure are that, since only the epitaxial light-doped alternating GaN layer is required, not only There is no problem of lattice mismatch, which is also beneficial to the release of stress in the epitaxial structure, which can improve the epitaxial quality of the crystal.
  • the epitaxial process is relatively simple and controllable and the repetition rate is high, and the bottom mirror is directly embedded in the chip, which is beneficial for practical applications.
  • the porous DBR is prepared by electrochemical method based on the light and heavy doped alternating GaN layer, and the realization process is simple and the cost is low.
  • the porous DBR structure can fundamentally break through the technical barrier of the InGaN-based cavity detector for high reflectivity bottom mirrors.
  • FIG. 1 is a schematic structural view of an InGaN-based resonator-enhanced detector chip based on a porous DBR according to an embodiment of the present disclosure
  • Figure 2 is a scanning electron microscope image of the porous DBR of Figure 1 of the present disclosure
  • Figure 3 is a reflection spectrum corresponding to the porous DBR scanning electron microscope of Figure 1 of the present disclosure.
  • This InGaN-based cavity detector structure consists of:
  • a substrate 10 a planar sapphire substrate or a patterned sapphire substrate. Other can be used for extension
  • the substrate further comprises silicon, silicon carbide or glass;
  • a buffer layer 11 is formed on the upper surface of the substrate 10.
  • the layer uses high-purity pure ammonia gas as a nitrogen source, and trimethylgallium or triethylgallium as a Ga source.
  • the GaN nucleation layer is grown at a low temperature, and the unintentionally doped GaN layer is grown at a high temperature.
  • Other buffers that can be used as a buffer layer are graphene or zinc oxide;
  • a bottom porous DBR layer 12 is formed on the upper surface of the buffer layer 11.
  • the layer is obtained by electrochemical etching of light and heavily doped alternating GaN layers.
  • the dopant is silane, the doping concentration is 1 ⁇ 10 19 cm -3 , and the light doping concentration is 5 ⁇ 10 16 cm -3 .
  • n-type GaN layer 13 is formed on an upper surface of the bottom porous DBR layer 12.
  • One side of the n-type GaN layer 13 is formed with a mesa 13' downward, and the other side is a protrusion, and the mesa 13' The depth is smaller than the thickness of the n-type GaN layer 13.
  • the dopant is silane and has a doping concentration of 1 ⁇ 10 18 cm -3 .
  • the n-type GaN layer 13 is used for electrochemical etching to form a current spreading layer of the porous DBR, and also serves as an electron injecting layer when the device is in operation;
  • An active layer 14 is formed on the upper surface of the n-type GaN layer 13.
  • the layer is an InGaN/GaN superlattice layer or a quantum well layer, and the other active layers further include AlGaN/GaN.
  • a p-type GaN layer 15 is formed on the upper surface of the active layer 14.
  • the layer dopant is ferrocene with a doping concentration of 1 ⁇ 10 20 cm ⁇ 3 .
  • This layer performs sidewall passivation to reduce the surface recombination current of the device.
  • Other materials that can be used as the sidewall passivation layer include Si 3 N 4 , HfO 2 or Al 2 O 3 .
  • a transparent conductive layer 16 is formed on the upper surface of the sidewall passivation layer 20 and its window at the p-type GaN layer 15.
  • This layer is an indium-doped tin oxide layer and forms an ohmic contact with the p-type GaN layer as a transparent electrode.
  • Other alternative indium-doped tin oxide layer materials include metal thin films, aluminum-doped zinc oxide, graphene or nano-silver wires.
  • An n-electrode 18 is formed on the mesa 13' of the n-type GaN layer 13.
  • the metal system used is Cr/Al/Ti/Au, and other metal systems usable as electrodes include Ni/Au, Cr/Pt/Au, Ni/Ag/Pt/Au, Ti/Au, Ti/Pt/Au.
  • a p-electrode 19 formed around the upper surface of the sidewall passivation layer 20 and covering a portion
  • the transparent conductive layer 16 the metal system used is Cr/Al/Ti/Au
  • other metal systems usable as electrodes include Ni/Au, Cr/Pt/Au, Ni/Ag/Pt/Au, Ti/Au, Ti/Pt/Au.
  • a top dielectric DBR layer 17 is formed on the upper surfaces of the transparent conductive layer 16 and the p-electrode 19.
  • This layer is a SiO 2 /TiO 2 dielectric layer DBR as a top mirror.
  • Other alternative DBRs include SiO 2 /Ta 2 O 5 , ZrO 2 /SiO 2 , SiO 2 /Al 2 O 3 or TiO 2 /Al 2 O 3 dielectric layer DBR.
  • the dielectric layer may include a phase adjustment layer to adjust the electric field distribution in the resonant cavity.
  • FIG. 2 shows a scanning electron microscope image of a porous DBR layer 12.
  • the porous GaN layer in the figure is a heavily doped GaN layer after electrochemical etching, and the unetched GaN layer is an unintentionally doped layer.
  • Fig. 3 is a reflection spectrum of the porous DBR.
  • the abscissa is the wavelength of light and the ordinate is the reflectivity.
  • the DBR has extremely high reflectivity and a wide height near 520 nm. Reflection band.
  • the resonant cavity structure is adopted on the InGaN-based detector according to the embodiment of the present disclosure, so that the optical wave reciprocates in the resonant cavity to form a photoelectric enhancement effect, thereby obtaining a high quantum efficiency on the InGaN absorption layer with a limited thickness without restricting Its response speed.
  • the detector with resonant cavity structure can also use the mode selection in the resonant cavity to achieve selective response of specific wavelengths such as blue light, greatly improving the wavelength recognition capability and anti-interference ability of the detector.
  • the response wavelength of the cavity detector can be adjusted, which is beneficial to realize multiplexing communication of different wavelengths, that is, wavelength division multiplexing, thereby greatly expanding the communication bandwidth.

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  • Electromagnetism (AREA)
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  • Engineering & Computer Science (AREA)
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Abstract

A porous DBR- and InGaN-based enhanced detector chip having a resonant cavity. The chip comprises: a substrate (10); a buffer layer (11) formed on the substrate (10); a lower porous DBR layer (12) formed on the buffer layer (11); an n-type GaN layer (13) formed on the lower porous DBR layer (12) and having a lower platform (13') on one side and a protrusion on anoother side; an active region (14) formed on the n-type GaN layer (13); a p-type GaN layer (15) formed on the active region (14); a side wall passivation layer (20) formed on an upper surface of a portion of the p-type GaN layer (15), and on side walls of the protruding portion of the n-type GaN layer (13), the active region (14), and p-type GaN layer (150), wherein a window is provided at a middle portion of the side wall passivation layer (20) on the upper surface of the p-type GaN layer (15); a transparent conductive layer (16) formed on the side wall passivation layer (20) and on the p-type GaN layer (15) at the window; a negative electrode (18) formed on the platform of the n-type GaN layer (13); a positive electrode (19) fabricated at a periphery of an upper surface of the side wall passivation layer (20); and an upper dielectric DBR layer (17) formed on the transparent conductive layer (16) and the positive electrode (19).

Description

基于多孔DBR的InGaN基谐振腔增强型探测器芯片InGaN-based resonant cavity enhanced detector chip based on porous DBR 技术领域Technical field
本公开涉及垂直腔面谐振腔增强型光电探测器，尤其涉及一种基于多孔布拉格反射镜(DBR)的InGaN基垂直腔面谐振腔增强型探测器芯片。The present disclosure relates to a vertical cavity cavity cavity enhanced photodetector, and more particularly to an InGaN-based vertical cavity surface cavity enhanced detector chip based on a porous Bragg mirror (DBR).
背景技术Background technique
当前，可见光通信在智能家居和智慧城市领域展现出了广阔的应用前景。作为可见光通信系统的重要环节，光接收端的光电转换效率和响应速度将直接制约可见光通信的传输距离和传输速率。目前光接收端多采用传统的Si基或GaAs、GaP基等商用半导体可见光探测器，但这类传统探测器容易受到户外复杂通信环境中的背景信号干扰。GaN及其三元化合物AlGaN和InGaN具有宽带隙以及带隙可调的特点，因此，GaN基器件在紫外光以及可见光光电应用上独具优势。GaN基材料具有优异的热稳定性及化学稳定性，并且具有较强的抗辐照能力，这使得GaN基光电器件可以胜任极端条件下的工作。此外，GaN基材料还具有高的电子漂移速度，利于制备高频光电探测器件。特别是InGaN可见光探测器，从可见光通信系统的一体化集成上来看，InGaN基探测器与可见光通信中常用的光发射端，InGaN/GaN量子阱发光二极管，在材料体系上相同，且制备工艺上兼容，因此极具潜力。Currently, visible light communication has shown broad application prospects in the field of smart homes and smart cities. As an important part of the visible light communication system, the photoelectric conversion efficiency and response speed of the light receiving end will directly restrict the transmission distance and transmission rate of the visible light communication. At present, conventional Si-based or GaAs, GaP-based and other commercial semiconductor visible light detectors are used in the light receiving end, but such conventional detectors are susceptible to background signal interference in outdoor complex communication environments. GaN and its ternary compounds, AlGaN and InGaN, have wide bandgap and adjustable bandgap. Therefore, GaN-based devices have unique advantages in UV and visible light applications. GaN-based materials have excellent thermal and chemical stability and are highly resistant to radiation, making GaN-based optoelectronic devices suitable for operation under extreme conditions. In addition, GaN-based materials also have high electron drift speeds, which facilitate the fabrication of high-frequency photodetector devices. In particular, InGaN visible light detectors, from the integration of visible light communication systems, InGaN-based detectors and light-emitting terminals commonly used in visible light communication, InGaN/GaN quantum well light-emitting diodes, the same in the material system, and the preparation process Compatible, so it has great potential.
目前研制的InGaN基可见光探测器在器件性能水平上仍然与Si基等可见光探测器有较大差距，主要体现在量子效率低。通常提高量子效率的方法是增加吸收层的厚度。但是对于InGaN材料而言，在GaN上外延得到厚层的InGaN非常困难，往往会出现相分离、In聚合、高背景载流子浓度以及纳米范围内材料不均匀等问题，这些问题在高In组分的厚层InGaN中更为严重。通常的解决方法是制备InGaN/GaN超晶格结构，来缓解各层应力，抑制相分离，从而使InGaN的有效厚度得到增加。 然而这种方法得到的InGaN层有效厚度依然有限。此外，通过增加吸收层厚度的方法来提高探测器的量子效率，会增加光生载流子在吸收层内的漂移时间，制约探测器的响应速度。At present, the InGaN-based visible light detector is still far from the visible light detector such as Si-based in the performance level of the device, which is mainly reflected in the low quantum efficiency. A common method of increasing quantum efficiency is to increase the thickness of the absorber layer. However, for InGaN materials, it is very difficult to epitaxially obtain thick layers of InGaN on GaN, and there are often problems such as phase separation, In polymerization, high background carrier concentration, and material unevenness in the nanometer range. These problems are in the high In group. The thick layer of InGaN is more severe. A common solution is to fabricate an InGaN/GaN superlattice structure to relieve stress in each layer and suppress phase separation, thereby increasing the effective thickness of InGaN. However, the effective thickness of the InGaN layer obtained by this method is still limited. In addition, increasing the quantum efficiency of the detector by increasing the thickness of the absorber layer increases the drift time of the photogenerated carriers in the absorber layer and limits the response speed of the detector.
发明内容Summary of the invention
本公开的目的在于，提供一种基于多孔DBR的InGaN基谐振腔增强型探测器芯片，具有制备工艺简单、成本低且重复率高的用于InGaN基谐振腔探测器的底部反射镜。It is an object of the present disclosure to provide a porous DBR-based InGaN-based resonator-enhanced detector chip having a bottom mirror for an InGaN-based resonator detector with a simple fabrication process, low cost, and high repetition rate.
本公开提供一种基于多孔DBR的InGaN基谐振腔增强型探测器芯片，包括：The present disclosure provides a porous DBR-based InGaN-based resonator-enhanced detector chip, comprising:
一衬底；a substrate
一缓冲层，形成于所述衬底的上表面；a buffer layer formed on an upper surface of the substrate;
一底部多孔DBR层，形成于所述缓冲层的上表面；a bottom porous DBR layer formed on an upper surface of the buffer layer;
一n型GaN层，形成于所述底部多孔DBR层的上表面，所述n型GaN层的一侧向下形成有台面，另一侧为凸起，所述台面的深度小于所述n型GaN层的厚度；An n-type GaN layer is formed on an upper surface of the bottom porous DBR layer, one side of the n-type GaN layer is formed downward with a mesa, and the other side is a protrusion, and the depth of the mesa is smaller than the n-type The thickness of the GaN layer;
一有源区，形成于所述n型GaN层的上表面；An active region formed on an upper surface of the n-type GaN layer;
一p型GaN层，其形成于所述有源区的上表面；a p-type GaN layer formed on an upper surface of the active region;
一侧壁钝化层，为绝缘介质，形成于所述p型GaN层部分的上表面及凸起的n型GaN层、有源区和p型GaN层的侧壁，并覆盖部分n型台面的表面，该p型GaN层上表面的侧壁钝化层中间有一窗口；a sidewall passivation layer, which is an insulating medium, is formed on an upper surface of the p-type GaN layer portion and a raised n-type GaN layer, an active region, and a sidewall of the p-type GaN layer, and covers a portion of the n-type mesa a surface having a window in the middle of the sidewall passivation layer on the upper surface of the p-type GaN layer;
一透明导电层，形成于所述侧壁钝化层及上述窗口处p型GaN层的上表面；a transparent conductive layer formed on the sidewall passivation layer and the upper surface of the p-type GaN layer at the window;
一n电极，形成于n型GaN层的台面上；An n-electrode formed on the mesa of the n-type GaN layer;
一p电极，其制作在侧壁钝化层上表面的周围，并覆盖部分透明导电层；a p-electrode formed around the upper surface of the sidewall passivation layer and covering a portion of the transparent conductive layer;
一顶部介质DBR层，形成于所述透明导电层及p电极的上表面。A top dielectric DBR layer is formed on the transparent conductive layer and the upper surface of the p-electrode.
本公开的有益效果是，由于只需外延轻重掺杂交替的GaN层，不仅 不存在晶格失配的问题，还有利于外延结构中应力的释放，可以改善晶体的外延质量，外延过程相对简单可控且重复率高，而且底部反射镜是直接嵌入芯片内部，利于实际应用。另外，多孔DBR是在轻重掺杂交替的GaN层的基础上采用电化学的方法制备，实现过程简单且成本低。多孔DBR结构可以从根本上突破InGaN基谐振腔探测器对于高反射率底部反射镜的技术壁垒。The beneficial effects of the present disclosure are that, since only the epitaxial light-doped alternating GaN layer is required, not only There is no problem of lattice mismatch, which is also beneficial to the release of stress in the epitaxial structure, which can improve the epitaxial quality of the crystal. The epitaxial process is relatively simple and controllable and the repetition rate is high, and the bottom mirror is directly embedded in the chip, which is beneficial for practical applications. . In addition, the porous DBR is prepared by electrochemical method based on the light and heavy doped alternating GaN layer, and the realization process is simple and the cost is low. The porous DBR structure can fundamentally break through the technical barrier of the InGaN-based cavity detector for high reflectivity bottom mirrors.
附图说明DRAWINGS
为使本公开的目的、技术方案和优点更加清楚明白，以下结合具体实施例并参照附图对本公开做进一步详细说明，其中：In order to make the objects, technical solutions, and advantages of the present disclosure more comprehensible, the present disclosure will be further described in detail with reference to the accompanying drawings
图1为本公开实施例基于多孔DBR的InGaN基谐振腔增强型探测器芯片的结构示意图；1 is a schematic structural view of an InGaN-based resonator-enhanced detector chip based on a porous DBR according to an embodiment of the present disclosure;
图2为本公开图1的多孔DBR扫描电子显微镜图片；Figure 2 is a scanning electron microscope image of the porous DBR of Figure 1 of the present disclosure;
图3本公开图1中的多孔DBR扫描电子显微镜对应的反射谱图。Figure 3 is a reflection spectrum corresponding to the porous DBR scanning electron microscope of Figure 1 of the present disclosure.
具体实施方式detailed description
在本公开中，术语“包括”和“含有”及其派生词意为包括而非限制。In the present disclosure, the terms "comprising" and "including" and their derivatives are intended to be inclusive and not limiting.
需要说明的是，本公开中提到的方向用语，例如“上”、“下”、“前”、“后”、“左”、“右”等，仅是参考附图的方向，并非用来限制本发明的保护范围。贯穿附图，相同的元素由相同或相近的附图标记来表示。在可能导致对本发明的理解造成混淆时，将省略常规结构或构造。并且图中各部件的形状和尺寸不反映真实大小和比例，而仅示意本公开实施例的内容。It should be noted that the directional terms mentioned in the present disclosure, such as "upper", "lower", "front", "back", "left", "right", etc., are only referring to the directions of the drawings, and are not used. To limit the scope of protection of the present invention. Throughout the drawings, the same elements are denoted by the same or similar reference numerals. Conventional structures or configurations will be omitted when it may cause confusion to the understanding of the present invention. Further, the shapes and sizes of the components in the drawings do not reflect the true size and proportion, but merely illustrate the contents of the embodiments of the present disclosure.
请参阅图1所示，本公开提供一种基于多孔DBR的InGaN基谐振腔增强型探测器芯片。此InGaN基谐振腔探测器结构包含：Referring to FIG. 1 , the present disclosure provides a porous DBR-based InGaN-based resonator enhanced detector chip. This InGaN-based cavity detector structure consists of:
一衬底10，平面蓝宝石衬底或图形蓝宝石衬底。其它可用于外延的 衬底还包括硅、碳化硅或玻璃；A substrate 10, a planar sapphire substrate or a patterned sapphire substrate. Other can be used for extension The substrate further comprises silicon, silicon carbide or glass;
一缓冲层11，形成与所述衬底10的上表面。该层以高纯纯氨气作为氮源，三甲基镓或三乙基镓作为Ga源，先低温生长GaN形核层，再高温生长非故意掺杂GaN层。其它可作为缓冲层的还有石墨烯或氧化锌；A buffer layer 11 is formed on the upper surface of the substrate 10. The layer uses high-purity pure ammonia gas as a nitrogen source, and trimethylgallium or triethylgallium as a Ga source. The GaN nucleation layer is grown at a low temperature, and the unintentionally doped GaN layer is grown at a high temperature. Other buffers that can be used as a buffer layer are graphene or zinc oxide;
一底部多孔DBR层12，形成于所述缓冲层11的上表面。该层由轻重掺杂交替的GaN层经电化学腐蚀得到，掺杂剂为硅烷，重掺杂浓度为1×1019cm-3，轻掺杂浓度为5×1016cm-3。A bottom porous DBR layer 12 is formed on the upper surface of the buffer layer 11. The layer is obtained by electrochemical etching of light and heavily doped alternating GaN layers. The dopant is silane, the doping concentration is 1×10 19 cm -3 , and the light doping concentration is 5×10 16 cm -3 .
一n型GaN层13，形成于所述底部多孔DBR层12的上表面，所述n型GaN层13的一侧向下形成有台面13’，另一侧为凸起，所述台面13’的深度小于所述n型GaN层13的厚度。掺杂剂为硅烷，掺杂浓度为1×1018cm-3。该n型GaN层13用于电化学腐蚀形成多孔DBR的电流扩展层，同时也作为器件工作时的电子注入层；An n-type GaN layer 13 is formed on an upper surface of the bottom porous DBR layer 12. One side of the n-type GaN layer 13 is formed with a mesa 13' downward, and the other side is a protrusion, and the mesa 13' The depth is smaller than the thickness of the n-type GaN layer 13. The dopant is silane and has a doping concentration of 1×10 18 cm -3 . The n-type GaN layer 13 is used for electrochemical etching to form a current spreading layer of the porous DBR, and also serves as an electron injecting layer when the device is in operation;
一有源层14，形成于所述n型GaN层13的上表面。该层为InGaN/GaN超晶格层或量子阱层，其它有源层还包括AlGaN/GaN。An active layer 14 is formed on the upper surface of the n-type GaN layer 13. The layer is an InGaN/GaN superlattice layer or a quantum well layer, and the other active layers further include AlGaN/GaN.
一p型GaN层15，其形成于所述有源层14的上表面。该层掺杂剂为二茂镁，掺杂浓度为1×1020cm-3。A p-type GaN layer 15 is formed on the upper surface of the active layer 14. The layer dopant is ferrocene with a doping concentration of 1×10 20 cm −3 .
一侧壁钝化层20，为绝缘介质SiO2，形成于所述p型GaN层15部分的上表面及凸起的n型GaN层13、有源层14和p型GaN层15的侧壁，并覆盖部分n型台面13’的表面，该p型GaN层15上表面的侧壁钝化层20中间有一窗口。该层做侧壁钝化作用，减少器件的表面复合电流，其它可用作侧壁钝化层的材料还包括Si3N4、HfO2或Al2O3。A sidewall passivation layer 20, which is an insulating medium SiO 2 , is formed on the upper surface of the portion of the p-type GaN layer 15 and the sidewalls of the raised n-type GaN layer 13, the active layer 14, and the p-type GaN layer 15. And covering a surface of a portion of the n-type mesa 13' having a window in the middle of the sidewall passivation layer 20 on the upper surface of the p-type GaN layer 15. This layer performs sidewall passivation to reduce the surface recombination current of the device. Other materials that can be used as the sidewall passivation layer include Si 3 N 4 , HfO 2 or Al 2 O 3 .
一透明导电层16，形成于所述侧壁钝化层20及其窗口处p型GaN层15的上表面。该层为掺铟氧化锡层，作为透明电极与p型GaN层形成欧姆接触。其它可替代的掺铟氧化锡层材料包括金属薄膜、掺铝氧化锌、石墨烯或纳米银线。A transparent conductive layer 16 is formed on the upper surface of the sidewall passivation layer 20 and its window at the p-type GaN layer 15. This layer is an indium-doped tin oxide layer and forms an ohmic contact with the p-type GaN layer as a transparent electrode. Other alternative indium-doped tin oxide layer materials include metal thin films, aluminum-doped zinc oxide, graphene or nano-silver wires.
一n电极18，形成于n型GaN层13的台面13’上，所用金属体系为Cr/Al/Ti/Au，其它可用作电极的金属体系还包括Ni/Au，Cr/Pt/Au，Ni/Ag/Pt/Au，Ti/Au,Ti/Pt/Au。An n-electrode 18 is formed on the mesa 13' of the n-type GaN layer 13. The metal system used is Cr/Al/Ti/Au, and other metal systems usable as electrodes include Ni/Au, Cr/Pt/Au, Ni/Ag/Pt/Au, Ti/Au, Ti/Pt/Au.
一p电极19，其制作在侧壁钝化层20上表面的周围，并覆盖部分 透明导电层16，所用的金属体系为Cr/Al/Ti/Au，其它可用作电极的金属体系还包括Ni/Au，Cr/Pt/Au，Ni/Ag/Pt/Au，Ti/Au,Ti/Pt/Au。a p-electrode 19 formed around the upper surface of the sidewall passivation layer 20 and covering a portion The transparent conductive layer 16, the metal system used is Cr/Al/Ti/Au, and other metal systems usable as electrodes include Ni/Au, Cr/Pt/Au, Ni/Ag/Pt/Au, Ti/Au, Ti/Pt/Au.
一顶部介质DBR层17，形成于所述透明导电层16及p电极19的上表面。该层为SiO2/TiO2介质层DBR，作为顶部反射镜。其它可替代的DBR包括SiO2/Ta2O5、ZrO2/SiO2、SiO2/Al2O3或TiO2/Al2O3介质层DBR。该介质层中可包含一层相位调整层，以调整谐振腔中的电场分布。A top dielectric DBR layer 17 is formed on the upper surfaces of the transparent conductive layer 16 and the p-electrode 19. This layer is a SiO 2 /TiO 2 dielectric layer DBR as a top mirror. Other alternative DBRs include SiO 2 /Ta 2 O 5 , ZrO 2 /SiO 2 , SiO 2 /Al 2 O 3 or TiO 2 /Al 2 O 3 dielectric layer DBR. The dielectric layer may include a phase adjustment layer to adjust the electric field distribution in the resonant cavity.
图2给出了一种多孔DBR层12的扫描电子显微镜图片。图中多孔GaN层为经电化学腐蚀后的重掺杂GaN层，未腐蚀的GaN层为非故意掺杂层。图3为此多孔DBR的反射谱图，图中横坐标为光波长，纵坐标为反射率，从反射谱图中可以看出，该DBR在520nm附近具有极高的反射率以及较宽的高反射带。Figure 2 shows a scanning electron microscope image of a porous DBR layer 12. The porous GaN layer in the figure is a heavily doped GaN layer after electrochemical etching, and the unetched GaN layer is an unintentionally doped layer. Fig. 3 is a reflection spectrum of the porous DBR. In the figure, the abscissa is the wavelength of light and the ordinate is the reflectivity. As can be seen from the reflection spectrum, the DBR has extremely high reflectivity and a wide height near 520 nm. Reflection band.
本公开实施例提出的在InGaN基探测器上采用谐振腔结构，促使光波在谐振腔内往复行进形成光电增强效应，从而在厚度有限的InGaN吸收层上获得较高的量子效率，同时又不制约其响应速度。另外，采用谐振腔结构的探测器，还可以利用谐振腔内的模式选择，实现特定波长如蓝光的选择性响应，大幅度提升探测器的波长识别能力以及抗干扰能力。通过InGaN中In组分的调制，可以调控谐振腔探测器的响应波长，这有利于实现不同波长的复用通信，即波分复用，从而大大扩展通信带宽。The resonant cavity structure is adopted on the InGaN-based detector according to the embodiment of the present disclosure, so that the optical wave reciprocates in the resonant cavity to form a photoelectric enhancement effect, thereby obtaining a high quantum efficiency on the InGaN absorption layer with a limited thickness without restricting Its response speed. In addition, the detector with resonant cavity structure can also use the mode selection in the resonant cavity to achieve selective response of specific wavelengths such as blue light, greatly improving the wavelength recognition capability and anti-interference ability of the detector. Through the modulation of the In composition in InGaN, the response wavelength of the cavity detector can be adjusted, which is beneficial to realize multiplexing communication of different wavelengths, that is, wavelength division multiplexing, thereby greatly expanding the communication bandwidth.
值得说明的是，以上所述仅为本公开的具体实施例，并不用于限制本公开，凡在本公开的精神和原则之内，所做的任何修改、等同替换和改进等，均应包含在本公开的保护范围之内。 It should be noted that the above description is only specific embodiments of the present disclosure, and is not intended to limit the disclosure, and any modifications, equivalents, and improvements made within the spirit and principles of the present disclosure should include It is within the scope of protection of the present disclosure.

Claims (8)

  1. 一种基于多孔DBR的InGaN基谐振腔增强型探测器芯片，包括：An InGaN-based resonant cavity enhanced detector chip based on porous DBR, comprising:
    一衬底；a substrate
    一缓冲层，形成于所述衬底的上表面；a buffer layer formed on an upper surface of the substrate;
    一底部多孔DBR层，形成于所述缓冲层的上表面；a bottom porous DBR layer formed on an upper surface of the buffer layer;
    一n型GaN层，形成于所述底部多孔DBR层的上表面，所述n型GaN层的一侧向下形成有台面，另一侧为凸起，所述台面的深度小于所述n型GaN层的厚度；An n-type GaN layer is formed on an upper surface of the bottom porous DBR layer, one side of the n-type GaN layer is formed downward with a mesa, and the other side is a protrusion, and the depth of the mesa is smaller than the n-type The thickness of the GaN layer;
    一有源区，形成于所述n型GaN层的上表面；An active region formed on an upper surface of the n-type GaN layer;
    一p型GaN层，其形成于所述有源区的上表面；a p-type GaN layer formed on an upper surface of the active region;
    一侧壁钝化层，为绝缘介质，形成于所述p型GaN层部分的上表面及凸起的n型GaN层、有源区和p型GaN层的侧壁，并覆盖部分n型台面的表面，该p型GaN层上表面的侧壁钝化层中间有一窗口；a sidewall passivation layer, which is an insulating medium, is formed on an upper surface of the p-type GaN layer portion and a raised n-type GaN layer, an active region, and a sidewall of the p-type GaN layer, and covers a portion of the n-type mesa a surface having a window in the middle of the sidewall passivation layer on the upper surface of the p-type GaN layer;
    一透明导电层，形成于所述侧壁钝化层及所述窗口处p型GaN层的上表面；a transparent conductive layer formed on the sidewall passivation layer and an upper surface of the p-type GaN layer at the window;
    一n电极，形成于n型GaN层的台面上；An n-electrode formed on the mesa of the n-type GaN layer;
    一p电极，其制作在侧壁钝化层上表面的周围，并覆盖部分透明导电层；a p-electrode formed around the upper surface of the sidewall passivation layer and covering a portion of the transparent conductive layer;
    一顶部介质DBR层，形成于所述透明导电层及p电极的上表面。A top dielectric DBR layer is formed on the transparent conductive layer and the upper surface of the p-electrode.
  2. 根据权利要求1所述的InGaN基谐振腔增强型探测器芯片，其中所述顶部介质DBR层和底部多孔DBR层分别构成谐振腔的上、下反射镜，且底部多孔DBR层在有源区发光峰附近的反射率高于95％并高于顶部介质DBR层。The InGaN-based resonator-enhanced detector chip according to claim 1, wherein said top dielectric DBR layer and bottom porous DBR layer respectively constitute upper and lower mirrors of the resonant cavity, and bottom porous DBR layer emits light in the active region The reflectance near the peak is higher than 95% and higher than the top dielectric DBR layer.
  3. 根据权利要求1所述的InGaN基谐振增强型腔探测器芯片，其中所述底部多孔DBR层为多孔层和非多孔层交替堆叠构成的氮化物DBR，该底部多孔DBR层的材料为GaN、AlGaN、InGaN或AlInGaN，或以上材料组合的n型重掺杂层和非故意掺杂层得到。The InGaN-based resonance-enhanced cavity detector chip according to claim 1, wherein the bottom porous DBR layer is a nitride DBR formed by alternately stacking a porous layer and a non-porous layer, and the material of the bottom porous DBR layer is GaN or AlGaN. InGaN or AlInGaN, or an n-type heavily doped layer and an unintentionally doped layer of the combination of the above materials are obtained.
  4. 根据权利要求1所述的InGaN基谐振腔增强型探测器芯片，其 中所述顶部介质DBR层为具有不同折射率的氧化物交替堆叠构成的多周期DBR结构，材料为SiO2/TiO2、SiO2/Ta2O5、ZrO2/SiO2、SiO2/Al2O3或TiO2/Al2O3。The InGaN-based resonator-enhanced detector chip according to claim 1, wherein said top dielectric DBR layer is a multi-cycle DBR structure in which oxides having different refractive indices are alternately stacked, and the material is SiO 2 /TiO 2 , SiO. 2 /Ta 2 O 5 , ZrO 2 /SiO 2 , SiO 2 /Al 2 O 3 or TiO 2 /Al 2 O 3 .
  5. 根据权利要求1所述的InGaN基谐振腔增强型探测器芯片，其中所述芯片衬底为蓝宝石、硅或碳化硅材料；所述缓冲层由依序生长的低温GaN形核层和非故意掺杂GaN层构成，形核层的材料包括AlN、ZnO或石墨烯。The InGaN-based resonator-enhanced detector chip according to claim 1, wherein said chip substrate is sapphire, silicon or silicon carbide material; said buffer layer is formed by sequentially growing low-temperature GaN nucleation layer and unintentionally doped The GaN layer is composed of a material including AlN, ZnO or graphene.
  6. 根据权利要求1所述的InGaN基谐振腔增强型探测器芯片，其中所述有源区为蓝光、绿光、黄光或紫光可见光波段的GaN基多量子阱结构；所述透明导电层为ITO、石墨烯、ZnO薄膜、透明金属电极材料，或以上材料所组合的复合薄膜材料。The InGaN-based resonator-enhanced detector chip according to claim 1, wherein the active region is a GaN-based multiple quantum well structure of a blue, green, yellow or violet visible light band; the transparent conductive layer is ITO , graphene, ZnO thin film, transparent metal electrode material, or a composite thin film material combined with the above materials.
  7. [根据细则26改正15.08.2017]　
    根据权利要求1所述的InGaN基谐振腔增强型探测器芯片，其中所述侧壁钝化层为SiO2、Si3N4、HfO2或Al2O3材料。     [Correct according to Rule 26 15.08.2017]
    The InGaN-based resonator-enhanced detector chip according to claim 1, wherein the sidewall passivation layer is a SiO 2 , Si 3 N 4 , HfO 2 or Al 2 O 3 material.
  8. [根据细则26改正15.08.2017]　
    根据权利要求1所述的InGaN基谐振腔增强型探测器芯片，其中所述底部多孔DBR层和缓冲层之间还多生长一层n型GaN层，作为专用于电化学腐蚀形成多孔DBR的电流扩展层。     [Correct according to Rule 26 15.08.2017]
    The InGaN-based resonator-enhanced detector chip according to claim 1, wherein an n-type GaN layer is further grown between the bottom porous DBR layer and the buffer layer as a current dedicated to electrochemically etching the porous DBR. Expansion layer.
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