CN111785816A - Quantum dot resonant cavity device based on DBR and preparation method - Google Patents

Quantum dot resonant cavity device based on DBR and preparation method Download PDF

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CN111785816A
CN111785816A CN202010638191.XA CN202010638191A CN111785816A CN 111785816 A CN111785816 A CN 111785816A CN 202010638191 A CN202010638191 A CN 202010638191A CN 111785816 A CN111785816 A CN 111785816A
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quantum dot
dbr
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赵丽霞
胡天贵
李晓东
林杉
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
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    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
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    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

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Abstract

The present disclosure provides a quantum dot resonant cavity device based on DBR, including: a substrate; a buffer layer on the substrate; a current diffusion layer on the buffer layer; the porous DBR layer is positioned on the n-GaN current diffusion layer and used as a bottom reflector of the resonant cavity; the phase adjusting layer is positioned on the porous DBR layer and used for adjusting the electric field distribution in the resonant cavity and increasing the resonance effect of the resonant cavity; a quantum dot active layer on the phase adjustment layer; a quantum dot protective layer on the quantum dot active layer; and the dielectric layer and the multi-period structure are positioned on the quantum dot protective layer and are used as a reflector at the top of the resonant cavity.

Description

Quantum dot resonant cavity device based on DBR and preparation method
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to a quantum dot resonant cavity device based on a DBR (Distributed bragg reflector) and a manufacturing method thereof.
Background
Resonant cavity devices exhibit great application prospects and market demands in the fields of high-density optical storage, light illumination, optical communication and the like, and have attracted attention in international scientific research and industry in recent years. Compared with the traditional side emitting device, the vertical emitting resonant cavity device has good dynamic single mode characteristics and space emitting mode characteristics, has the advantages of low working threshold value, small light beam divergence angle, low manufacturing cost, high temperature stability and the like, and is easy to realize high-density two-dimensional array integration and light output with higher light power. However, the edge-emitting device has been commercialized, and the resonant cavity device with more excellent performance for vertical emission has not yet reached the practical level, and the difficulty is mainly that it is difficult to obtain a high-quality optical resonant cavity.
BRIEF SUMMARY OF THE PRESENT DISCLOSURE
Technical problem to be solved
Based on the above problems, the present disclosure provides a quantum dot resonant cavity device based on a DBR and a manufacturing method thereof, so as to alleviate the technical problem that in the prior art, a vertically emitting resonant cavity device still does not reach a practical level due to the difficulty in obtaining a high-quality optical resonant cavity.
(II) technical scheme
In one aspect of the present disclosure, there is provided a DBR-based quantum dot resonant cavity device, comprising: a substrate; a buffer layer on the substrate; a current diffusion layer on the buffer layer; the porous DBR layer is positioned on the n-GaN current diffusion layer and used as a bottom reflector of the resonant cavity; the phase adjusting layer is positioned on the porous DBR layer and used for adjusting the electric field distribution in the resonant cavity and increasing the resonance effect of the resonant cavity; a quantum dot active layer on the phase adjustment layer; a quantum dot protective layer on the quantum dot active layer; and the dielectric layer and the multi-period structure are positioned on the quantum dot protective layer and are used as a reflector at the top of the resonant cavity.
In an embodiment of the present disclosure, the substrate is a planar or a patterned substrate; the preparation material of the substrate comprises any one of sapphire, silicon or silicon carbide.
In an embodiment of the present disclosure, the buffer layer is composed of a low temperature GaN nucleation layer and an unintentionally doped GaN layer.
In an embodiment of the present disclosure, the porous DBR layer includes porous layers and non-porous layers alternately stacked to constitute a multi-period DBR structure.
In the embodiment of the present disclosure, the bottom DBR layer is obtained by electrochemically etching the lightly doped layer and the heavily doped layer which are alternately stacked, the heavily doped layer is electrochemically etched to obtain the porous layer, and the non-porous layer is the un-etched lightly doped layer.
In the disclosed embodiment, the phase adjustment layer is made of a hydrophilic, transparent material.
In the embodiment of the disclosure, the quantum dot active layer is formed by uniformly coating quantum dots on the upper surface of the phase adjustment layer by a spin coating method and is located at the position of the standing wave peak of the cavity of the resonant cavity.
In embodiments of the present disclosure, the quantum dots are aqueous phase quantum dots.
In the embodiment of the disclosure, the preparation material of the dielectric layer comprises multi-period SiO2/TiO2、SiO2/Ta2O5、TiO2/Al2O3Or ZrO2/SiO2At least one of them.
In another aspect of the present disclosure, a method for manufacturing a DBR-based quantum dot resonant cavity device is provided, where the method is used to manufacture any one of the DBR-based quantum dot resonant cavity devices, and includes:
step S1: sequentially growing a buffer layer and a current diffusion layer on a substrate;
step S2: preparing the alternately stacked lightly doped layers and heavily doped layers on the current diffusion layer prepared in step S1, and performing lateral etching on the alternately stacked lightly doped layers and heavily doped layers to obtain porous DBR layers in which porous layers and non-porous layers are alternately stacked;
step S3: preparing a phase adjustment layer on the porous DBR layer obtained in step S2;
step S4: coating quantum dots on the surface of the phase adjustment layer prepared in the step S3 to obtain a quantum dot active layer and drying the quantum dot active layer;
step S5: preparing a quantum dot protective layer on the quantum dot active layer obtained in the step S4; and
step S6: and (5) preparing a dielectric layer on the quantum dot protective layer prepared in the step (S5) so as to finish the preparation of the quantum dot resonant cavity device based on the DBR.
(III) advantageous effects
According to the technical scheme, the quantum dot resonant cavity device based on the DBR and the preparation method have at least one or one part of the following beneficial effects:
(1) the problem of lattice mismatch of the traditional DBR is solved, and a high-quality resonant cavity is obtained;
(2) the repeatability is high, and the practical application is facilitated;
(3) the quality factor of the resonant cavity device can be further improved, so that the light-emitting effect is improved;
(4) the method has great application in the fields of optical storage, optical communication, optical display and the like.
Drawings
Fig. 1 is a schematic structural diagram of a DBR-based quantum dot resonant cavity device according to an embodiment of the present disclosure.
Fig. 2 is a schematic flow chart of a method for manufacturing a quantum dot resonant cavity device based on a DBR according to an embodiment of the present disclosure.
Fig. 3 is a scanning electron microscope picture of the porous DBR layer of fig. 1.
Fig. 4 is a reflection spectrum corresponding to the porous DBR layer shown in fig. 3.
Fig. 5 is a reflection spectrum of the dielectric layer of fig. 1.
Fig. 6 is a transmission electron microscope image of aqueous phase quantum dots according to an embodiment of the disclosure.
FIG. 7 is a PL spectrum of an aqueous phase quantum dot in an embodiment of the disclosure.
Fig. 8 is a photoluminescence spectrum of quantum dot layers before and after formation of a resonant cavity.
[ description of main reference numerals in the drawings ] of the embodiments of the present disclosure
1-a substrate; 2-a buffer layer; 3-a current spreading layer; 4-porous DBR layer;
5-a phase adjusting layer; 6-a quantum dot active layer; 7-a quantum dot protective layer; 8-dielectric layer.
Detailed Description
The invention provides a quantum dot resonant cavity device based on a DBR (distributed Bragg reflector) and a preparation method thereof, wherein a transverse porous GaNDBR is used as a bottom DBR, and only a GaN layer with periodically modulated doping concentration needs to be epitaxially grown in the preparation process of the device, and the device is prepared by adopting an electrochemical corrosion method, so that the problem of lattice mismatch of the traditional DBR is solved, a high-quality resonant cavity can be obtained, and the device is simple in preparation process, high in repeatability and beneficial to practical application; the quantum dot material is adopted as the active layer, and the quality factor of the resonant cavity device can be further improved due to the unique zero-dimensional structure, so that the light-emitting effect is improved. The high-quality resonant cavity has great application in the fields of optical storage, optical communication, optical display and the like.
The inventors consider that the difficulty in obtaining a high quality optical cavity in the prior art is due, on the one hand, to the difficulty in obtaining a high quality, high reflectivity bottom mirror. In general, the bottom DBR may employ a dielectric layer DBR and a nitride semiconductor DBR. The dielectric layer DBR has the advantages that two materials with large refractive index difference can be easily found, so that the requirement of a high-quality resonant cavity on high reflectivity of a bottom reflector is met, but the laser stripping, hot-press bonding and other processes are needed in the preparation process, so that the process cost is greatly improved, the bottom of an epitaxial layer after laser stripping is very uneven, and the stripping surface needs to be flattened through chemical polishing, so that the scattering loss is reduced. In addition, in order to minimize the influence of laser lift-off on the active region, it is often necessary to use a longer cavity length to keep the active region away from the lift-off plane, which may reduce the quality factor of the cavity. The nitride DBR has the advantages that the preparation process is simple, epitaxial growth can be directly carried out on the surface of a substrate, but two materials with small lattice mismatch and large refractive index difference are difficult to find in a nitride material system, the requirement of preparing a high-reflectivity bottom reflector of a high-quality resonant cavity is difficult to meet, more DBR periods are often required to be increased, and a superlattice insertion layer is introduced to meet the requirement of the high-reflectivity bottom reflector of the high-quality resonant cavity, so that the preparation procedure of the nitride DBR is complex, the epitaxial condition is very harsh, and the repetition rate is not high. The transverse porous GaN DBR which attracts people to pay attention recently perfectly solves the difficulty that two materials with smaller lattice mismatch and larger refractive index difference are difficult to find in a nitride material system, and the alternately stacked light and heavy doped layers are directly epitaxially grown on the substrate and are converted into the DBR structure with the alternately stacked porous layers and the non-porous layers through transverse electrochemical corrosion, so that the bottom reflector with high reflection bandwidth is prepared, the cost is low, the repeatability is high, the preparation process is simple, and the transverse porous GaN DBR is the optimal structure as the bottom reflector of the high-quality resonant cavity.
On the other hand, it is because it is difficult to obtain an active layer material of high quality and excellent light emission characteristics. Due to the unique zero-dimensional structure of the quantum dot material, the quantum dot material has a plurality of quantum effects, so that the quantum dot material has the advantages of low threshold current, high optical gain, high response speed and the like when being applied to an optical device, and the radiation wavelength has size dependence. These advantages make quantum dots increasingly the popular material in the field of optics.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
In an embodiment of the present disclosure, a DBR-based quantum dot resonant cavity device is provided, as shown in fig. 1, the DBR-based quantum dot resonant cavity device includes:
a substrate 1;
a buffer layer 2 on the substrate 1;
a current diffusion layer 3 on the buffer layer 2;
a porous DBR layer 4 which is positioned on the n-GaN current diffusion layer 3 and is used as a bottom reflector of the resonant cavity;
the phase adjusting layer 5 is positioned on the porous DBR layer 4 and used for adjusting the electric field distribution in the resonant cavity and increasing the resonant effect of the resonant cavity;
a quantum dot active layer 6 on the phase adjustment layer 5;
a quantum dot protective layer 7 on the quantum dot active layer 6;
the dielectric layer 8 is positioned on the quantum dot protective layer 7 and is used as a reflector at the top of the resonant cavity;
the substrate 1 is a plane or graphic substrate; the preparation material of the substrate 1 comprises any one of sapphire, silicon or silicon carbide;
the buffer layer 2 consists of a low-temperature GaN nucleation layer and an unintentionally doped GaN layer; during preparation, high-purity ammonia gas is used as a nitrogen source, trimethyl gallium or triethyl gallium is used as a Ga source, a GaN nucleation layer grows at low temperature, and an unintended doped GaN layer grows at high temperature. The preparation material of the nucleation layer can also comprise at least one of AlN, ZnO or graphene.
The current diffusion layer 3 is made of n-GaN and is used for electrochemically etching a current diffusion region forming the bottom porous DBR layer.
The porous DBR layer 4 comprises porous layers and non-porous layers which are alternately stacked to form a multi-period DBR structure; the number of cycles of the porous DBR layer 4 was 12.
The bottom DBR layer 4 is obtained by electrochemically etching the lightly doped layer and the heavily doped layer which are alternately stacked, the heavily doped layer is electrochemically etched to obtain a porous layer, and the non-porous layer is the un-etched lightly doped layer.
Typical doping concentration of the heavily doped layer is not less than 1 × 1018cm-3The preparation material comprises any one or the combination of GaN, AlGaN, InGaN and AlInGaN.
The lightly doped layer is made of low-doped or non-doped GaN material;
the phase adjusting layer 5 is made of hydrophilic, transparent material such as SiO2。
The phase adjusting layer 5 is used for adjusting the electric field distribution in the resonant cavity and increasing the resonant effect of the resonant cavity as much as possible;
the quantum dot active layer is formed by uniformly coating quantum dots on the upper surface of the phase adjusting layer 5 by a spin coating method; the quantum dots are commercial water-phase carbon quantum dots, the diameter of the quantum dots is not more than 10nm, and the light-emitting peak is about 511 nm.
The quantum dot protective layer 7 is used for preventing the carbon quantum dots from being damaged in the subsequent process of preparing the top dielectric layer, and the material of the quantum dot protective layer needs to be a transparent material with better thermal stability, and the prepared material comprises PMMA or SiO2Etc.;
the preparation material of the dielectric layer 8 comprises multi-period SiO2/TiO2、SiO2/Ta2O5、TiO2/Al2O3Or ZrO2/SiO2At least one, the dielectric layer 8 acts as a resonator top mirror.
In the disclosed embodiment, the reflectivity of the underlying porous DBR layer 4 (resonator bottom mirror) should be higher than 95% at the emission peak of the quantum dot active layer 6 and higher than the reflectivity of the dielectric layer 8 (resonator top mirror) at the emission peak position of the active layer.
In an embodiment of the present disclosure, a method for manufacturing a quantum dot resonator device based on a DBR is further provided, which is shown in fig. 2 and fig. 1, and includes:
step S1: sequentially growing a buffer layer 2 and a current diffusion layer 3 on a substrate 1;
in the embodiment of the disclosure, a buffer layer and an n-type GaN current diffusion layer are grown on a substrate in sequence; the substrate material is any one of sapphire, silicon or silicon carbide;
the buffer layer is composed of a low-temperature GaN nucleation layer and an unintended doped GaN layer, high-purity ammonia gas is used as a nitrogen source, trimethyl gallium or triethyl gallium is used as a Ga source, the GaN nucleation layer grows at low temperature, and the unintended doped GaN layer grows at high temperature; materials that can be used as nucleation layers also include AlN, ZnO, graphene, and the like;
the n-type GaN current diffusion layer is used for facilitating the formation of porous GaN in the subsequent electrochemical corrosion process;
step S2: preparing the alternately stacked lightly doped layer and heavily doped layer on the current diffusion layer prepared at step S1, and performing lateral etching on the alternately stacked lightly doped layer and heavily doped layer to obtain a porous DBR layer 4 in which porous layers and non-porous layers are alternately stacked;
in the embodiment of the present disclosure, the porous DBR layer is obtained by electrochemically etching the lightly doped layer and the heavily doped layer which are alternately stacked, and the porous layer is obtained by electrochemically etching the heavily doped layer, and the non-porous layer is the unetched lightly doped layer.
Typical doping concentration of the heavily doped layer is not less than 1 × 1018cm-3, the preparation material comprises any one or the combination of GaN, AlGaN, InGaN and AlInGaN.
The lightly doped layer is made of low-doped or non-doped GaN material;
step S3: preparing a phase adjustment layer on the porous DBR layer obtained in step S2;
in step S3, a phase adjustment layer is coated on the porous DBR layer by a spin coating method, so that the active layer is located at the position of the standing wave peak of the cavity of the resonant cavity;
step S4: coating quantum dots on the surface of the phase adjustment layer prepared in the step S3 to obtain a quantum dot active layer and drying the quantum dot active layer;
the quantum dots are commercial water-phase carbon quantum dots, the diameter of the quantum dots is not more than 10nm, and the light-emitting peak is about 511 nm;
step S5: preparing a quantum dot protective layer on the quantum dot active layer obtained in the step S4;
in step S5, a quantum dot protective layer is coated on the dried quantum dot active layer by using a spin coating method; the quantum dot protective layer material needs to be a transparent material with better thermal stability, such as PMMA; the quantum dot protective layer is used for preventing the carbon quantum dots from being damaged in the subsequent process of preparing the top DBR;
step S6: and (5) preparing a dielectric layer on the quantum dot protective layer prepared in the step (S5) so as to finish the preparation of the quantum dot resonant cavity device based on the DBR.
The DBR of the medium layer is multi-period SiO2/TiO2、SiO2/Ta2O5、TiO2/Al2O3Or Zr02/SiO2And (5) structure.
In the embodiment of the present disclosure, as shown in fig. 3, the porous layer is a heavily doped GaN layer that is electrochemically etched to form a porous structure, and the non-porous layer is an unetched lightly doped GaN layer. The porous and non-porous layers have a difference in refractive index due to the introduction of air gaps (pores), and the porous DBR layers 4 are formed after being alternately stacked. In the embodiment of the present disclosure, as shown in fig. 4, the central wavelength of the reflection spectrum of the porous DBR layer is about 511nm, and the reflectivity is close to 1 in the wavelength range of 475nm to 555nm, which satisfies the requirement of high reflectivity of the bottom mirror for the high quality resonator.
In the embodiment of the present disclosure, as shown in fig. 5, the reflectivity of the dielectric layer 8 exceeds 90% at the wavelength of 475-.
In the embodiment of the present disclosure, as shown in fig. 6 and 7, the diameter of the water phase carbon quantum dot is not more than 10nm, and the light emission peak position is about 511nm, which corresponds to the high reflection band of the porous DBR layer and the dielectric layer shown in fig. 4 and 5, and satisfies the resonant cavity resonance condition.
In the embodiment of the present disclosure, as shown in fig. 8, a straight line of a point is a photoluminescence spectrum of the active layer before the dielectric layer 8 is not prepared, that is, the resonant cavity is formed, and a solid line is a photoluminescence spectrum of the active layer after the dielectric layer 8 is prepared, that is, the resonant cavity is formed, compared with a photoluminescence spectrum of the active layer after the resonant cavity is visibly formed, the light emission intensity of the quantum dot active layer is obviously improved, and the monochromaticity is also obviously improved.
So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.
From the above description, those skilled in the art should clearly recognize that the disclosed DBR-based quantum dot resonator device and the fabrication method thereof.
In summary, the present disclosure provides a quantum dot resonator device based on a DBR and a method for manufacturing the same, in which a porous DBR layer in which porous layers and non-porous layers are alternately stacked is used as a bottom mirror of a resonator, thereby realizing the manufacture of the bottom mirror with a high reflection bandwidth. On the basis, the water-phase quantum dots are coated as an active layer, the dielectric layer DBR is used as a top reflector, and the high-quality resonant cavity is obtained, is simple in preparation process and high in repeatability, and is beneficial to practical application; the quantum dot material is adopted as the active layer, and the quality factor of the resonant cavity device can be further improved due to the unique zero-dimensional structure, so that the light-emitting effect is improved. The high-quality resonant cavity has great application in the fields of optical storage, optical communication, optical display and the like.
It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.
And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.
Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The use of ordinal numbers such as "first," "second," "third," etc., in the specification and claims to modify a corresponding element does not by itself connote any ordinal number of the element or any ordering of one element from another or the order of manufacture, and the use of the ordinal numbers is only used to distinguish one element having a certain name from another element having a same name.
In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.
Those skilled in the art will appreciate that the modules in the device in an embodiment may be adaptively changed and disposed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Also in the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.

Claims (10)

1. A DBR-based quantum dot resonant cavity device, comprising:
a substrate;
a buffer layer on the substrate;
a current diffusion layer on the buffer layer;
the porous DBR layer is positioned on the n-GaN current diffusion layer and used as a bottom reflector of the resonant cavity;
the phase adjusting layer is positioned on the porous DBR layer and used for adjusting the electric field distribution in the resonant cavity and increasing the resonance effect of the resonant cavity;
a quantum dot active layer on the phase adjustment layer;
a quantum dot protective layer on the quantum dot active layer; and
and the dielectric layer and the multi-period structure are positioned on the quantum dot protective layer and are used as a reflector at the top of the resonant cavity.
2. The DBR-based quantum dot resonant cavity device of claim 1, wherein the substrate is a planar or a graphical substrate; the preparation material of the substrate comprises any one of sapphire, silicon or silicon carbide.
3. The DBR-based quantum dot resonant cavity device of claim 1, the buffer layer comprised of a low temperature GaN nucleation layer and an unintentionally doped GaN layer.
4. The DBR-based quantum dot resonant cavity device of claim 1, wherein the porous DBR layer comprises alternating stacks of porous and non-porous layers, forming a multi-period DBR structure.
5. The DBR-based quantum dot resonant cavity device of claim 1, wherein the bottom DBR layer is obtained by electrochemically etching the lightly doped and heavily doped layers stacked alternately, the heavily doped layer being electrochemically etched to obtain the porous layer, and the non-porous layer being the non-etched lightly doped layer.
6. The DBR-based quantum dot resonant cavity device of claim 1, wherein the phase adjustment layer is fabricated using a hydrophilic, transparent material.
7. The DBR-based quantum dot resonator device of claim 1, wherein the quantum dot active layer is formed by uniformly coating quantum dots on the upper surface of the phase adjusting layer by spin coating at the position of the peak of the standing wave of the resonator cavity.
8. The DBR-based quantum dot resonant cavity device of claim 7, wherein the quantum dots are aqueous phase quantum dots.
9. The DBR-based quantum dot resonant cavity device of claim 1, wherein the dielectric layer is formed from a material comprising a multi-periodic SiO layer2/TiO2、SiO2/Ta2O5、TiO2/Al2O3Or ZrO2/SiO2At least one of them.
10. A method for preparing a DBR-based quantum dot resonant cavity device, the method for preparing the DBR-based quantum dot resonant cavity device according to any one of claims 1 to 9, comprising:
step S1: sequentially growing a buffer layer and a current diffusion layer on a substrate;
step S2: preparing the alternately stacked lightly doped layers and heavily doped layers on the current diffusion layer prepared in step S1, and performing lateral etching on the alternately stacked lightly doped layers and heavily doped layers to obtain porous DBR layers in which porous layers and non-porous layers are alternately stacked;
step S3: preparing a phase adjustment layer on the porous DBR layer obtained in step S2;
step S4: coating quantum dots on the surface of the phase adjustment layer prepared in the step S3 to obtain a quantum dot active layer and drying the quantum dot active layer;
step S5: preparing a quantum dot protective layer on the quantum dot active layer obtained in the step S4; and
step S6: and (5) preparing a dielectric layer on the quantum dot protective layer prepared in the step (S5) so as to finish the preparation of the quantum dot resonant cavity device based on the DBR.
CN202010638191.XA 2020-07-03 2020-07-03 Quantum dot resonant cavity device based on DBR and preparation method Pending CN111785816A (en)

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