CN106856296A - A kind of long-wavelength vertical cavity surface emitting laser - Google Patents
A kind of long-wavelength vertical cavity surface emitting laser Download PDFInfo
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- CN106856296A CN106856296A CN201611232774.2A CN201611232774A CN106856296A CN 106856296 A CN106856296 A CN 106856296A CN 201611232774 A CN201611232774 A CN 201611232774A CN 106856296 A CN106856296 A CN 106856296A
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- cavity surface
- vertical cavity
- surface emitting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
- H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a kind of long-wavelength vertical cavity surface emitting laser, including substrate, N-shaped DBR, N-shaped space layer, active area, p-type space layer, light hole are followed successively by substrate, p faces electrode is deposited with p-type space layer, and surround light hole, current-limiting layer is provided with the middle of N-shaped DBR, round electric limiting holes are formed with current-limiting layer, substrate and N-shaped DBR are isodiametric circular platform type structure, the diameter of the light hole is had a diameter larger than, less than long-wavelength vertical cavity surface emitting laser last solution off-chip piece lateral dimension.The structure can reduce the series resistance inside long-wavelength vertical cavity surface emitting laser, increase the efficiency of injection carrier, realize the improvement of the high speed characteristics of device.
Description
Technical field
The present invention relates to a kind of long-wavelength vertical cavity surface emitting laser, there is important application in optical-fibre communications field, belong to
In field of semiconductor lasers.
Background technology
Vertical cavity surface emitting laser have circular output facula, the small angle of divergence, low threshold current, high transfer rate,
The advantages of high power conversion efficiency, low electric power loss, elevated operating temperature, high reliability and low cost, and it and light coupling
Close efficiency high, it is easy to be made two bit arrays, can detect in place, be especially suitable for large-scale production, be that optical fiber generally acknowledged in the world leads to
One of most potential cost laser light source in news field.
First, development based on material system, exploitation complexity and device cost are considered, what initial LAN was used
It is the 850nm vertical cavity surface emitting lasers of GaAs bases, transmission rate is 0.1~10Gbit/s.The device is swashed using same
During optical output power, the transmission range under 100Mbit/s speed is 7-8km；When transmission rate is improved to 10Gbit/s, its biography
Defeated distance is only 50m.Optical fiber decay in the wavelength it is minimum be about 2dB/km, so 850nm vertical cavity surface emitting lasers are
The communication need of high-speed local area network can not be met.And during long wavelength's such as 1310nm wave bands, optical fiber attenuation is minimum to be about 0.5dB/km,
0.2dB/km is decayed to during 1550nm wave bands.It can be seen that long-wavelength vertical cavity surface emitting laser be optical-fibre communications field development must
Right trend.
Secondly, the rapid growth of internet and " internet+" has greatly promoted Metropolitan Area Network (MAN), LAN and optical interconnection etc.
Demand of the high-speed light communication field to bandwidth.
So, the high velocity vertical cavity surface emitting lasers (VCSEL) of long wavelength increasingly become the high speed light source of most main flow
One of.High speed of the inside and outside two aspects factor such as Quantum well active district and device parasitic parameter to vertical cavity surface emitting laser device
Special product life influence.And the structure of device directly determines dead resistance and electric capacity in device circuitry.So device architecture is influence
The important factor of high speed characteristics.
At present, the vertical cavity surface emitting laser of traditional long wavelength typically uses indium phosphide (InP) material substrate, (1)
In Grown n-DBR structures, generally from InGaAsP or AlInGaAs quaternary semiconductors material system and InP lattices
Match somebody with somebody, prepare n-DBR structures.To meet the conditions for lasing of vertical cavity surface emitting laser, distribution Bragg reflector needs are prepared
The transition zone of the material of the different component that growth tens pairs is even up to a hundred pairs, (2) growth DBR and active area, is also device waveguide
Layer, (3) growth of device active layer, usually to SQW, (4) grow the transition zone of DBR and active area, (5) growth p-type to 3-7
DBR, p-type DBR equally need the material of the different component of growth tens pairs even up to a hundred pairs with N-shaped DBR.
Usual structure N-shaped structure etches the mesa-shaped structure of active area, then the structure for etching p-type DBR as substrate.
Electrode is grown in n-type substrate bottom surface electrode evaporation and p-type DBR.To flow through loop be that distance is to injection carrier, injection carrier from
Contact electrode moves to the lateral resistance at etching round platform edge from metal electrode to the ohmic contact resistance of semiconductor, has flowed through
The longitudinal electrical resistance of source region, N-shaped DBR resistance.Because long wavelength DBR needs logarithm more, the series connection of vertical cavity surface emitting laser
Resistance Influence is larger, influences the high speed characteristics of device.
The content of the invention
(1) technical problem to be solved
It is an object of the invention to provide a kind of long-wavelength vertical cavity surface emitting laser, to reduce long wavelength vertical cavity surface
Series resistance inside emitting laser, increases the efficiency of injection carrier, realizes the improvement of the high speed characteristics of device.
(2) technical scheme
The invention provides a kind of long-wavelength vertical cavity surface emitting laser, the long-wavelength vertical cavity surface emitting laser by
Under it is supreme successively include substrate 8, N-shaped DBR6, N-shaped space layer 5, active area 4, p-type space layer 3, light hole 9 and p faces electrode 2,
Wherein p faces electrode 2 is deposited with p-type space layer 3, and surrounds light hole 9, and current-limiting layer 10, electric current are provided with the middle of N-shaped DBR6
Round electric limiting holes 11 are formed with limiting layer 10, it is characterised in that
The substrate 8 and N-shaped DBR6 are isodiametric circular platform type structure, have a diameter larger than the diameter of the light hole 9, small
In long-wavelength vertical cavity surface emitting laser last solution off-chip piece lateral dimension.
Wherein, the long-wavelength vertical cavity surface emitting laser also includes：N faces electrode 7, it is deposited with the substrate 8 and N-shaped
The bottom surface and side of the isodiametric circular platform type structure that DBR6 is formed.
Wherein, the substrate 8 is InP materials.
Wherein, the N-shaped DBR6 is semi-conducting material or dielectric material.
Wherein, the semi-conducting material is AlxInyGa(1-x-y)As/InP or InxGa(1-x)AsyP(1-y)/ InP, is given an account of
Electric material is α-Si/Al2O3、MgO/α-Si、CaF2/ α-Si or CaF2/ZnS。
Wherein, the material of N-shaped space layer 5 is InP or the ternary matched with InP or quaternary semiconductor material.
Wherein, the active area 4 is single SQW or multipair quantum well structure.
Wherein, the single SQW or multipair quantum well structure, its quantum-well materials component are AlxInyGa(1-x-y)As/
AlxInyGa(1-x-y)As or InxGa(1-x)AsyP(1-y)/InxGa(1-x)AsyP(1-y), the SQW number is 3-7.
Wherein, the material of p-type space layer 3 is InP or the ternary matched with InP or quaternary semiconductor material.
Wherein, the material of p faces electrode 2 is Cr/Au metals.
Wherein, the p-type DBR1 is semi-conducting material or dielectric material.
Wherein, the semi-conducting material is AlxInyGa(1-x-y)As/InP or InxGa(1-x)AsyP(1-y)/ InP, the dielectric
Material is α-Si/Al2O3、MgO/α-Si、CaF2/ α-Si or CaF2/ZnS。
Wherein, n faces electrode 7 is the encirclement N-shaped DBR6 and the ring pouch-type structure of the circular platform type structure of substrate 8, institute
The material of n faces electrode 7 is stated for Au/Ge/Ni metals.
Wherein, the diameter of the current-confining apertures 11 is less than the diameter of the N-shaped DBR6 and the circular platform type structure of substrate 8 and described
The diameter of light hole 9.
(3) beneficial effect
From above-mentioned technical proposal as can be seen that the present invention is by the substrate and N-shaped DBR using isodiametric circular platform type structure
The series resistance inside long-wavelength vertical cavity surface emitting laser can be reduced, increase the efficiency of injection carrier, realize device
High speed characteristics improvement.
Brief description of the drawings
Fig. 1 is a kind of long-wavelength vertical cavity surface emitting laser structural representation of specific embodiment of the invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention become more apparent, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in further detail.
Fig. 1 is a kind of long-wavelength vertical cavity surface emitting laser structural representation of specific embodiment of the invention.Such as Fig. 1
Shown, the structure includes substrate 8, N-shaped DBR6, N-shaped space layer 5, active area 4, p-type space layer 3, light hole 9, p from bottom to up
Face electrode 2 is deposited with p-type space layer 3, and surrounds light hole 9, and current-limiting layer 10, current limit are provided with the middle of N-shaped DBR6
Round electric limiting holes 11 are formed with layer 10, wherein, the substrate 8 and N-shaped DBR6 are isodiametric circular platform type structure, and its is straight
Footpath is more than the diameter of the light hole 9, less than long-wavelength vertical cavity surface emitting laser last solution off-chip piece lateral dimension.Long wave
Also include n faces electrode 7 in the structure of vertical cavity surface emitting laser long, it is deposited with bottom surface and side in substrate 8 and N-shaped DBR6
Face, n faces electrode 7 is encirclement substrate 8 and the ring pouch-type structure of N-shaped DBR6 circular platform type structures.
A kind of long-wavelength vertical cavity surface emitting laser of specific embodiment of the invention, the manufacture craft of its structure, work
The parameters such as material, material thickness used by skill flow, Each part are as follows：
Substrate 8, is N-shaped InP materials, and thickness is 150 μm；On the substrate 8, using molecular beam epitaxy (MBE) evaporating n type
DBR 6, N-shaped DBR6 are 42 couples of Al0.235Ga0.235In0.53As/InP, Al0.23sGa0.235In0.53The thickness of As is 103.4nm,
The thickness of InP is 91nm, and doping concentration is 3e18cm-3。
In N-shaped DBR6, current-limiting layer 10 is provided with, current-limiting layer 10 is 1 couple in N-shaped DBR6
Al0.235Ga0.235In0.53As/InP, apart from the 3 pairs of DBR positions in N-shaped DBR6 tops, uses ion implanting shape on current-limiting layer 10
Circular current-confining apertures 11, ion implantation dosage is 1 × 1015cm-2, energy is 450KeV, and current-confining apertures 11 are non-conductive
Area level, the dual limitation to electric current and light, in order to realize high speed characteristics, the aperture of current-confining apertures 11 is 13 μm.
Substrate 8 and N-shaped DBR6 are sequentially etched from the method for the back side up use dry etching of substrate 8 and do not carve N-shaped
DBR6 forms isodiametric circular platform type structure, and etching depth is etched a diameter of to the 3 pairs of positions of DBR in the lower section of current-confining apertures 11
50μm。
It is N-shaped space layer 5 on N-shaped DBR 6, the material of N-shaped space layer 5 is InP, or the ternary or four matched with InP
Element, semiconductor material, the present embodiment uses InP materials, and N-shaped space layer 5 is 177nm for the thickness of InP materials.
It is active area 4 in N-shaped space layer 5, active area 4 is component Al0.161Ga0.102In0.74As/
Al0.267Ga0.203In0.53The strained quantum well of As is constituted, Al0.161Ga0.102In0.74As is undoped material, and thickness is 8nm,
Al0.267Ga0.203In0.53As is undoped material, and thickness is 9nm, and SQW number is 4, and its excitation wavelength is 1310nm.
It is p-type space layer 3 on active area 4, p-type space layer 3 is InP materials or the ternary or quaternary that are matched with InP
Semi-conducting material, the present embodiment uses InP materials, and the thickness of material is 177nm.
It is p-type DBR1 in p-type space layer 3, p-type DBR1 is 3 couples of CaF2/ ZnS, CaF is deposited with using electron-beam vapor deposition method2
Thickness 903nm, ZnS thickness be 374nm；P-type DBR1 is performed etching, it is centrally formed round table surface, the circular platform
Face is light hole 9, and a diameter of 30 μm of light hole 9, thickness is the gross thickness of p-type DBR1, i.e. etching depth to p-type space layer
3 upper surfaces.
The long wavelength vertical cavity surface formed after cleavage p-type space layer 3, active area 4, N-shaped space layer 5 and current-limiting layer 10
Emitting laser chip blockage, the size that becomes of blockage is 220 μm.
P faces electrode 2, is deposited with p-type space layer 3, and surrounds light hole 9, and the material of p faces electrode 2 is Cr/Au metals, is
Formation good Ohmic contact, its thickness elects 0.05 μm as.
N faces electrode 7 uses Au/Ge/Ni metals, is to be deposited with the bottom surface of isodiametric circular platform type structure from the back side of substrate 8
And side, the ring pouch-type structure of the circular platform type structure of the bottom surface and side that surround substrate 8 and N-shaped DBR6 is formed, it is good in order to be formed
Good Ohmic contact, its thickness elects 0.05 μm as.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail bright, it should be understood that the foregoing is only specific embodiment of the invention, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc. should be included in protection of the invention
Within the scope of.
Claims (14)
1. a kind of long-wavelength vertical cavity surface emitting laser, the long-wavelength vertical cavity surface emitting laser includes successively from the bottom to top
Substrate (8), N-shaped DBR (6), N-shaped space layer (5), active area (4), p-type space layer (3), light hole (9) and p faces electrode (2),
Wherein p faces electrode (2) is deposited with p-type space layer (3), and surrounds light hole (9), and current limit is provided with the middle of N-shaped DBR (6)
Layer (10), is formed with round electric limiting holes (11) on current-limiting layer (10), it is characterised in that
The substrate (8) and N-shaped DBR (6) are isodiametric circular platform type structure, have a diameter larger than the diameter of the light hole (9),
Less than long-wavelength vertical cavity surface emitting laser last solution off-chip piece lateral dimension.
2. long-wavelength vertical cavity surface emitting laser as claimed in claim 1, it is characterised in that the long wavelength vertical cavity surface is sent out
Penetrating laser also includes：N faces electrode (7), it is deposited with the isodiametric circular platform type formed in the substrate (8) and N-shaped DBR (6)
The bottom surface and side of structure.
3. long-wavelength vertical cavity surface emitting laser as claimed in claim 1, it is characterised in that the substrate (8) is InP materials
Material.
4. long-wavelength vertical cavity surface emitting laser as claimed in claim 1, it is characterised in that the N-shaped DBR (6) is half
Conductor material or dielectric material.
5. long-wavelength vertical cavity surface emitting laser as claimed in claim 4, it is characterised in that the semi-conducting material is
AlxInyGa(1-x-y)As/InP or InxGa(1-x)AsyP(1-y)/ InP, the dielectric material is α-Si/Al2O3、MgO/α-Si、
CaF2/ α-Si or CaF2/ZnS。
6. long-wavelength vertical cavity surface emitting laser as claimed in claim 1, it is characterised in that N-shaped space layer (5) material
Expect ternary or the quaternary semiconductor material matched for InP or with InP.
7. long-wavelength vertical cavity surface emitting laser as claimed in claim 1, it is characterised in that the active area (4) is single
Individual SQW or multipair quantum well structure.
8. long-wavelength vertical cavity surface emitting laser as claimed in claim 7, it is characterised in that the single SQW or many
To quantum well structure, its quantum-well materials component is AlxInyGa(1-x-y)As/AlxInyGa(1-x-y)As or InxGa(1-x)
AsyP(1-y)/InxGa(1-x)AsyP(1-y), the SQW number is 3-7.
9. long-wavelength vertical cavity surface emitting laser as claimed in claim 1, it is characterised in that p-type space layer (3) material
Expect ternary or the quaternary semiconductor material matched for InP or with InP.
10. long-wavelength vertical cavity surface emitting laser as claimed in claim 1, it is characterised in that the p faces electrode (2) material
Expect to be Cr/Au metals.
11. long-wavelength vertical cavity surface emitting lasers as claimed in claim 1, it is characterised in that the p-type DBR (1) is half
Conductor material or dielectric material.
12. long-wavelength vertical cavity surface emitting lasers as claimed in claim 11, it is characterised in that the semi-conducting material is
AlxInyGa(1-x-y)As/InP or InxGa(1-x)AsyP(1-y)/ InP, the dielectric material is α-Si/Al2O3、MgO/α-Si、
CaF2/ α-Si or CaF2/ZnS。
13. long-wavelength vertical cavity surface emitting lasers as claimed in claim 1, it is characterised in that n faces electrode (7) are
The ring pouch-type structure of the circular platform type structure of the N-shaped DBR (6) and substrate (8) is surrounded, the n faces electrode (7) material is Au/Ge/
Ni metals.
14. long-wavelength vertical cavity surface emitting lasers as claimed in claim 1, it is characterised in that the current-confining apertures
(11) diameter is less than the N-shaped DBR (6) and the diameter and the diameter of the light hole (9) of substrate (8) circular platform type structure.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020077649A (en) * | 2018-11-05 | 2020-05-21 | 学校法人 名城大学 | Nitride semiconductor light-emitting element |
| CN113193473A (en) * | 2021-03-30 | 2021-07-30 | 北京工业大学 | Non-magnetized VCSEL laser packaging structure |
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| CN102664347A (en) * | 2012-05-04 | 2012-09-12 | 中国科学院长春光学精密机械与物理研究所 | High-power electrically pumped vertical external cavity surface emitting laser with mode control structure |
| CN102801107A (en) * | 2012-08-08 | 2012-11-28 | 中国科学院长春光学精密机械与物理研究所 | Vertical-cavity surface-emitting laser and manufacturing method thereof |
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| JPH0864869A (en) * | 1994-08-26 | 1996-03-08 | Rohm Co Ltd | Semiconductor light emitting element |
| US5914976A (en) * | 1997-01-08 | 1999-06-22 | W. L. Gore & Associates, Inc. | VCSEL-based multi-wavelength transmitter and receiver modules for serial and parallel optical links |
| US6852557B1 (en) * | 2000-08-21 | 2005-02-08 | Jds Uniphase Corporation | Method of fabricating long-wavelength VCSEL and apparatus |
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| CN113193473A (en) * | 2021-03-30 | 2021-07-30 | 北京工业大学 | Non-magnetized VCSEL laser packaging structure |
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