CN115085009B - InAs quantum dot laser and preparation method thereof - Google Patents
InAs quantum dot laser and preparation method thereof Download PDFInfo
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- CN115085009B CN115085009B CN202210890606.1A CN202210890606A CN115085009B CN 115085009 B CN115085009 B CN 115085009B CN 202210890606 A CN202210890606 A CN 202210890606A CN 115085009 B CN115085009 B CN 115085009B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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Abstract
An InAs quantum dot laser and a preparation method thereof comprise a substrate, a GaAs buffer layer, a lower coating layer, an InAs quantum dot active region and an upper coating layer which are sequentially stacked, wherein the InAs quantum dot active region comprises an n-type doped quantum dot layer, a GaAs non-doped spacer layer, a p-type doped GaAs layer and a GaAs non-doped spacer layer which are sequentially stacked. The invention provides a novel doping mode based on a GaAs substrate and a Si substrate, specially doped quantum dot active regions, and a small amount of electrons and holes are doped in the active regions which should not be doped, so that the performance of a laser is improved. According to the method, the 1.3 mu m communication waveband quantum dot laser is subjected to p-type modulation doping and n-type direct doping simultaneously, so that a high characteristic temperature T0 and a low threshold current density are achieved.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to an InAs quantum dot laser and a preparation method thereof.
Background
As microelectronics technologies mature, moore's law is approaching the physical, technical, and cost limits. Moore's law is currently facing serious challenges, but at the same time the challenges are accompanied by opportunities. Due to technological limitations and economic cost limitations, heterogeneous integrated circuits are beginning to receive widespread attention. Among them, silicon-based optoelectronics, which integrates a Complementary Metal Oxide Semiconductor (CMOS) process compatible laser, optical modulator, optical waveguide, and optical detector into a microelectronic circuit, has the features of ultra-high transmission processing speed and bandwidth of optical elements, and low cost and small size of electronic devices, and attracts the interest of a great number of researchers. However, group IV elements such as silicon and germanium are indirect bandgap semiconductors and have poor light emitting properties. Even if the material is changed into a direct band gap by means of strain and heavy doping, the light emitting performance still does not reach a commercial level. The materials of III-V group compound semiconductor InAs, gaAs and the like are materials with direct band gaps, and have very good light-emitting characteristics. The quantum dot laser has insensitivity to defects, low threshold current of an electric pump and good high-temperature resistance, and is assisted by a mature growth preparation technology (such as a molecular beam epitaxy technology) and widely applied to communication bands. However, direct epitaxial techniques of silicon-based III-V have inherent technical difficulties such as inversion domains, threading dislocations and microcracks. These dislocations form non-radiative junctions and centers, which severely affect the laser's luminous efficiency and lifetime. So how to reduce dislocations and obtain better quantum dot lasers on native substrates is the main research direction of scientists.
In a traditional InAs/GaAs quantum dot laser, since the energy difference between the ground state and the excited state of charges in quantum dots is larger than that of holes, the holes are more likely to jump from the ground state to the excited state or even to a heterojunction at high temperature, thereby reducing the photoelectric conversion efficiency of the laser, so that a p-type modulation doping technology is used to increase the characteristic temperature of the laser. But p-type modulation doping techniques increase the threshold current density of the laser. Obtaining quantum dot lasers with higher characteristic temperature T0 and low threshold current density is an important milestone for commercialization.
Disclosure of Invention
The technical problem to be solved by the invention is to overcome the defects and defects mentioned in the background technology, and provide an InAs quantum dot laser and a preparation method thereof by specially doping the active region of the quantum dot laser.
In order to solve the technical problems, the technical scheme provided by the invention is as follows:
an InAs quantum dot laser comprises a substrate, a GaAs buffer layer, a lower coating layer, an InAs quantum dot active region and an upper coating layer which are sequentially stacked, wherein the InAs quantum dot active region comprises an n-type doped quantum dot layer, a GaAs non-doped spacer layer, a p-type doped GaAs layer and a GaAs non-doped spacer layer which are sequentially stacked.
The N-type doped quantum dot layer provides luminescent and gain materials for the laser; the N-shaped doping provides additional electrons for the quantum dots; the p-type doped GaAs layer provides additional holes for the quantum dots. The GaAs undoped layer is used for solving the stress problem caused by the quantum dots, so that the lattice constant of the GaAs material is kept in the growth of the next layer of quantum dot material.
Preferably, the thickness of the p-type doped GaAs layer is 5-15nm.
Preferably, the lower cladding layer includes a GaAs lower contact layer, al stacked in this order x Ga 1-x As/GaAs n-type lower strain superlattice, al x Ga 1-x As n-type lower limiting layer, al x Ga 1-x An As/GaAs undoped lower strain superlattice and a GaAs undoped lower waveguide layer; the upper cladding layer comprises a GaAs non-doped upper waveguide layer, an InAs quantum dot active region, and Al x Ga 1-x As or GaAs undoped upper strain superlattice, al x Ga 1-x As p-type upper limiting layer, al x Ga 1-x An As/GaAs p-type upper strained superlattice and a GaAs upper contact layer.
Due to Al x Ga 1-x The A and GaAs materials have different refractive indexes, and the N-type superlattice and the P-type superlattice are respectively used for the upper part and the lower part of an active region of the laser.
Preferably, the Al is x Ga 1-x As/GaAs n-type lower strain superlattice and Al x Ga 1-x The thickness of the As/GaAs p-type upper strain superlattice is 50-100 nm, and the Al is x Ga 1-x As n type lower limiting layer and Al x Ga 1-x The thickness of the As p-type upper limiting layer is 1200-1500 nm, and the Al is x Ga 1-x As/GaAs undoped lower strain superlattice and Al x Ga 1-x The thickness of the As/GaAs non-doped upper strain superlattice is 10-50 nm, and the Al is x Ga 1-x The thickness of As/GaAs p-type upper strain superlattice is 50-100 nm, the thickness of GaAs non-doped lower waveguide layer and GaAs non-doped upper waveguide layer is 40-150 nm, al is added x Ga 1-x X in As is 20% to 95%, and Al x Ga 1-x Al in superlattice material of As/GaAs x Ga 1-x As and GaAs are alternately grown for 10-30 periods.
Preferably, the GaAs lower contact layer is a GaAs n-type lower contact layer with the thickness of 150-300 nm and the doping concentration of 1-5 × 10 18 cm -2 . The GaAs upper contact layer is a GaAs p-type upper contact layer, and the thickness of the GaAs upper contact layer is 150-300 nm.
The contact layer subsequently requires metal deposition on a GaAsn-type lower contact layer and a GaAsp-type upper contact layer, with the possibility of forming electrodes of low resistivity.
Preferably, the substrate includes at least one of a III-V compound substrate and a Si substrate having a defect filtering layer or a Ge buffer layer.
Under the same technical concept, the invention also provides a preparation method of the InAs quantum dot laser, which comprises the following steps:
(1) Removing the surface oxide layer of the substrate, and growing a GaAs buffer layer on the substrate;
(2) Growing a lower coating layer on the GaAs buffer layer;
(3) Growth of InAs quantum dot active region, in x Ga 1-x The thickness of the As quantum well is 30-80 nm, the deposition amount of the quantum dots is 2.5-3.3 atomic layer thickness, in the process of quantum dot growth, n-type doping is carried out on the quantum dots, p-type doping is carried out on 10 nm GaAs in GaAs spacing layers in the quantum dots, and the doping concentration of the n-type doped quantum dot layers is 0.1-5 multiplied by 10 18 cm -3 The temperature is 400-600 ℃, and the doping concentration of the p-type doped quantum dot layer is 1-10 multiplied by 10 17 cm -3 ；In x Ga 1- x X in As quantum wells is 10-20%;
(4) And after the InAs quantum dot active region is grown, growing an upper cladding layer.
Preferably, the removing the oxide layer on the surface of the substrate in the step (1) specifically comprises: and (3) sending the GaAs substrate into a Molecular beam epitaxy Molecular beam epitaxixy chamber of the III-V group material to remove the surface oxide layer, wherein the temperature is 500-650 ℃.
Preferably, the growing of the lower cladding layer in the step (2) specifically comprises:
the method comprises the following steps: growing GaAsn type lower contact layer with doping concentration of 1-5 × 10 on the substrate 18 cm -3 At a temperature of 500-600 ℃ and Al x Ga 1-x The x component in As is 20-90%;
step two: growing Al x Ga 1-x As/GaAs n-type lower superlattice with doping concentration of 1-5 × 10 18 cm -3 At 500-650 ℃ Al x Ga 1-x The x component in As is 20-90%;
step three: growing Al x Ga 1-x An As n-type lower limiting layer with a doping concentration of 1-5 × 10 18 cm -3 At 500-650 deg.C, al x Ga 1-x The x component in As is 20-90%;
step four: growing Al x Ga 1-x As/GaAs undoped lower superlattice at 500-650 deg.C, and Al x Ga 1-x The x component in As is 20-90%;
step five: growing a GaAs undoped lower waveguide layer at the temperature of 400-600 ℃;
preferably, the growing of the upper cladding layer in the step (4) specifically comprises:
step six: after the InAs quantum dot active region is grown, growing a GaAs non-doped upper waveguide layer at the temperature of 400-600 ℃;
step seven: growing Al x Ga 1-x As/GaAs non-doped upper superlattice at 500-650 deg.C, and Al x Ga 1-x The x component in As is 20-90%;
step eight: growing Al x Ga 1-x An As p-type upper limiting layer with a doping concentration of 1-5 × 10 18 cm -3 At 500-650 ℃ Al x Ga 1-x The x component in As is 20-90%;
step nine: growing Al x Ga 1-x As/GaAs p-type superlattice with doping concentration of 2-5 × 10 17 cm -3 At 500-650 ℃ Al x Ga 1-x The x component in As is 20-90%;
step ten: growing a GaAs p-type upper contact layer with a doping concentration of 5-20 × 10 18 cm -3 The temperature is 400-500 ℃.
Compared with the prior art, the invention has the beneficial effects that:
(1) The invention provides a novel doping mode based on a GaAs substrate and a Si substrate, specially doped quantum dot active regions, and a small amount of electrons and holes are doped in the active regions which should not be doped, so that the performance of a laser is improved. According to the method, p-type modulation doping and n-type direct doping are simultaneously carried out on a 1.3 mu m communication waveband quantum dot laser to obtain a high characteristic temperature T0 and a low threshold current density;
(2) The invention does not need to change the whole structure of the laser, but can effectively reduce the threshold current of the quantum dot laser and improve the characteristic temperature T0 of the quantum dot, so that the quantum dot laser has better performance at high temperature. The method effectively combines III-V materials and a doping source, and utilizes the epitaxial growth technology to obtain a method which has no extra cost input and can improve the performance of the quantum dot laser;
(3) The III-V group substrate can be replaced by a Si substrate, and only a defect filter layer or a Ge buffer layer is added in the growth process to reduce the dislocation density, so that a 1.3 < 13211 > InAs quantum dot laser with a waveband on the Si substrate can be realized.
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In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic view of a stack of InAs quantum dot lasers of example 1;
FIG. 2 is a schematic illustration of doping of an InAs quantum dot active region of example 1;
fig. 3 is a graph of output power of the semiconductor lasers fabricated in example 1, comparative example 1, and comparative example 2.
Detailed Description
In order to facilitate understanding of the invention, the invention will be described more fully and in detail with reference to the accompanying drawings and preferred embodiments, but the scope of the invention is not limited to the specific embodiments below.
Unless otherwise defined, all terms of art used hereinafter have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of the present invention.
Unless otherwise specifically stated, various raw materials, reagents, instruments, equipment and the like used in the present invention are commercially available or can be prepared by existing methods.
Example 1:
a preparation method of an InAs quantum dot laser comprises the following steps:
(1) Feeding the GaAs substrate into a Molecular beam epitaxy Molecular beam epi-xy chamber made of III-V material to remove a surface oxide layer, wherein the temperature is 610 ℃, and growing a GaAs buffer layer on the substrate;
(2) Growing a lower coating layer on the GaAs buffer layer, which specifically comprises the following steps:
the method comprises the following steps: growing GaAsn type lower contact layer on the substrate with doping concentration of 5 × 10 18 cm -3 The temperature is 500-600 ℃;
step two: growing AlGaAs/GaAs n-type lower superlattice with period of 25 and doping concentration of 5 × 10 18 cm -3 The temperature is 500-650 ℃;
step three: growing AlGaAs n-type lower limiting layer with doping concentration of 5 × 10 18 cm -3 The temperature is 600 ℃;
step four: growing AlGaAs/GaAs non-doped lower strain superlattice with the period of 15 and the temperature of 600 ℃;
step five: growing a GaAs undoped lower waveguide layer at 590 ℃;
(3) And growing an InAs quantum dot active region and 8 layers of quantum dot materials. First, in is grown at a low temperature of 510 DEG C 0.15 Ga 0.85 The thickness of the As quantum well is 2 nm, then InAs quantum dots with the thickness of about 3ML are grown, and in the process of growing the quantum dots, the quantum dots are doped in an n-type mode. Then depositing 4.5 nm of In on the surface of the quantum dot 0.15 Ga 0.85 As and 4nm GaAs and annealing at high temperature to 600 c and finally growing a 37nm GaAs spacer layer to complete the quantum dot growth of this layer. Wherein 10 nm GaAs in the GaAs spacer layer is p-type doped, and the doping concentration of the n-type doped quantum dot layer is 2 × 10 17 cm -3 The doping concentration of the p-type doped quantum dot layer is 5 multiplied by 10 17 cm -3 ；
(4) After the InAs quantum dot active region is grown, an upper coating layer is grown, and the method specifically comprises the following steps:
step six: after the InAs quantum dot active region is grown, growing a GaAs non-doped upper waveguide layer at the temperature of 590 ℃;
step seven: growing AlGaAs/GaAs non-doped upper strain superlattice with the period of 15 and the temperature of 600 ℃;
step eight: growing AlGaAs p-type upper confinement layer with doping concentration of 5 × 10 17 cm -3 The temperature is 600 ℃;
step nine: growing AlGaAs/GaAs p-type upper superlattice with period of 25 and doping concentration of 2 × 10 17 cm -3 The temperature is 600 ℃;
step ten: growing GaAsp type upper contact layer with doping concentration of 2 × 10 19 cm -3 The temperature was 500 ℃.
The InAs quantum dot laser comprises a substrate, a GaAs buffer layer, a GaAsn lower contact layer with a thickness of 300 nm, and an Al layer with a thickness of 50nm 0.4 Ga 0.6 As/GaAs n-type lower superlattice waveguide layer, and 1400 nm thick Al 0.4 Ga 0.6 As n-type lower limiting layer, 30 nm thick Al 0.4 Ga 0.6 An As/GaAs undoped lower superlattice, a GaAs undoped lower waveguide layer with a thickness of 42.5nm, an InAs quantum dot active region, a GaAs undoped upper waveguide layer with a thickness of 50nm, and Al with a thickness of 30 nm 0.4 Ga 0.6 As/GaAs non-doped upper superlattice and 1400 nm thick Al 0.4 Ga 0.6 As p-type upper limiting layer, 50nm thick Al 0.4 Ga 0.6 An As/GaAs p-type upper superlattice and a 300 nm thick upper contact layer of GaAs.
The InAs quantum dot active region comprises an n-type doped quantum dot layer, a GaAs non-doped spacing layer, a p-type doped GaAs layer with the thickness of 10 nm and a GaAs non-doped spacing layer with the thickness of 16.5 nm which are sequentially stacked.
Comparative example 1
A quantum dot laser in which a quantum dot region is p-type doped, the structure of which is the same as that in example 1 except for (3). The implementation method comprises the following steps:
(3) And growing an InAs quantum dot active region and growing 8 layers of quantum dot materials. First, in is grown at a low temperature of 510 deg.C 0.15 Ga 0.85 The thickness of the As quantum well is 2 nm, and then InAs quantum dots with the thickness of about 3ML are grown. Then depositing 4.5 nm of In on the surface of the quantum dot 0.15 Ga 0.85 As and GaAs with the grain size of 4nm, annealing at high temperature to 600 ℃, and finally growing a GaAs spacer layer with the grain size of 37nm to finish the quantum dot growth of the layer. Wherein 10 nm GaAs in the GaAs spacer layer is p-doped with a quantum dot layer doping concentration of 5 × 10 17 cm -3 ；
Comparative example 2
A quantum dot laser in which a quantum dot region is n-type doped, the structure being the same as in example 1 except for (3). The implementation method comprises the following steps:
(3) And growing an InAs quantum dot active region and growing 8 layers of quantum dot materials. First, in is grown at a low temperature of 510 deg.C 0.15 Ga 0.85 The thickness of the As quantum well is 2 nm, then InAs quantum dots with the thickness of about 3ML are grown, and in the process of growing the quantum dots, the quantum dots are doped in an n-type mode. Then depositing 4.5 nm of In on the surface of the quantum dot 0.15 Ga 0.85 As and GaAs with the grain size of 4nm, annealing at high temperature to 600 ℃, and finally growing a GaAs spacer layer with the grain size of 37nm to finish the quantum dot growth of the layer. The doping concentration of the n-type doped quantum dot layer is 2 multiplied by 10 17 cm -3 ，
FIG. 3 shows example 1, comparative example 1 and comparative example 2, which were manufactured by a laser process and under the same conditions, FP semiconductor lasers with a length of 1mm and a width of 50 μm were manufactured. As shown in fig. 3, the laser (N + P) manufactured in example 1 has a lower lasing threshold than those of comparative examples 1 (P) and 2 (N), thus demonstrating that example 1 has both a higher characteristic temperature T0 and a lower threshold current density, and excellent performance.
Claims (8)
1. An InAs quantum dot laser is characterized by comprising a substrate, a GaAs buffer layer, a lower coating layer, an InAs quantum dot active region and an upper coating layer which are sequentially stacked, wherein the InAs quantum dot active region comprises an n-type doped quantum dot layer, a GaAs non-doped spacer layer, a p-type doped GaAs layer and a GaAs non-doped spacer layer which are sequentially stacked;
the lower coating layer comprises a GaAs lower contact layer and Al which are sequentially stacked x Ga 1-x As/GaAs n-type lower strain superlattice, al x Ga 1-x As n type lower limiting layer, al x Ga 1-x An As/GaAs undoped lower strain superlattice and a GaAs undoped lower waveguide layer; the upper cladding layer comprises a GaAs undoped upper waveguide layer and Al x Ga 1-x As/GaAs undoped upper strain superlattice, al x Ga 1-x As p-type upper confinement layer, al x Ga 1-x An As/GaAs p-type upper strain superlattice and GaAs upper contact layer; wherein Al is x Ga 1-x X in As is 20% to 80%;
the GaAs lower contact layer is a GaAsn type lower contact layer with the thickness of 150-300 nm, and the GaAs upper contact layer is a GaAsp type upper contact layer with the thickness of 150-300 nm.
2. The InAs quantum dot laser of claim 1, wherein the p-type doped GaAs layer is 5-15nm thick.
3. The InAs quantum dot laser of claim 1, wherein the Al is x Ga 1-x As/GaAs n-type lower strain superlattice and Al x Ga 1-x The thickness of As/GaAs p-type upper strain superlattice is 50-100 nm, and the thickness of Al is x Ga 1-x As n-type lower limiting layer and Al x Ga 1-x Asp type upper limiting layer with thickness of 1200-1500 nm, and Al x Ga 1-x As/GaAs undoped lower strain superlattice and Al x Ga 1-x The thickness of the As/GaAs non-doped upper strain superlattice is 10-50 nm, the thickness of the GaAs non-doped lower waveguide layer and the GaAs non-doped upper waveguide layer is 40-150 nm, and the Al is x Ga 1-x Al in superlattice material of As/GaAs x Ga 1-x As and GaAs are alternately grown for 10-30 periods.
4. The InAs quantum dot laser of claim 1, wherein the substrate comprises one of a III-V compound substrate and a Si substrate with a defect filter layer or a Ge buffer layer.
5. A method for preparing an InAs quantum dot laser as claimed in any of claims 1-4, comprising the steps of:
(1) Removing the surface oxide layer of the substrate, and growing a GaAs buffer layer on the substrate;
(2) Growing a lower coating layer on the GaAs buffer layer;
(3) Growing InAs quantum dot active region, in x Ga 1-x The thickness of the As quantum well is 30-80 nm, the deposition amount of the quantum dots is 2.5-3.3 atomic layer thickness, in the process of quantum dot growth, n-type doping is carried out on the quantum dots, p-type doping is carried out on 10 nm GaAs in a GaAs spacing layer in the quantum dots, and the doping concentration of the n-type doped quantum dot layer is 0.1-5 multiplied by 10 18 cm -3 The temperature is 400-600 ℃, and the doping concentration of the p-type doped quantum dot layer is 1-10 multiplied by 10 17 cm -3 ；In x Ga 1- x X in As quantum wells is 10-20%;
(4) And after the InAs quantum dot active region is grown, growing an upper cladding layer.
6. The method for preparing an InAs quantum dot laser according to claim 5, wherein the step (1) of removing the surface oxide layer of the substrate specifically comprises: and (3) conveying the GaAs substrate into a III-V material molecular beam epitaxial cavity to remove a surface oxide layer, wherein the temperature is 500-650 ℃.
7. The method for preparing an InAs quantum dot laser as claimed in claim 5, wherein the growing of the lower cladding layer in step (2) specifically comprises:
the method comprises the following steps: growing GaAsn type lower contact layer on the substrate with doping concentration of 1-5 × 10 18 cm -3 The temperature is 500-600 ℃;
step two: growing Al x Ga 1-x As/GaAs n-type lower strain superlattice with doping concentration of 1-5 × 10 18 cm -3 The temperature is 500-650 ℃;
step three: growing Al x Ga 1-x An As n-type lower limiting layer with a doping concentration of 1-5 × 10 18 cm -3 The temperature is 500-650 ℃;
step four: growing Al x Ga 1-x As/GaAs is not to be mixed under the strain superlattice, the temperature is 500-650 ℃;
step five: growing a GaAs non-doped lower waveguide layer at 400-600 deg.C.
8. The method for preparing an InAs quantum dot laser as claimed in claim 5, wherein the growing of the upper cladding layer in step (4) specifically comprises:
step six: after the InAs quantum dot active region is grown, growing a GaAs non-doped upper waveguide layer at the temperature of 400-600 ℃;
step seven: growing Al x Ga 1-x As/GaAs is not doped and is strained the superlattice, the temperature is 500-650 ℃;
step eight: growing Al x Ga 1-x An As p-type upper limiting layer with a doping concentration of 1-5 × 10 18 cm -3 The temperature is 500-650 ℃;
step nine: growing Al x Ga 1-x As/GaAs p-type upper strain superlattice with doping concentration of 2-5 × 10 17 cm -3 The temperature is 500-650 ℃;
step ten: growing GaAsp-type upper contact layer with doping concentration of 1-10 × 10 18 cm -3 The temperature is 400-500 ℃.
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| CN106480498A (en) * | 2016-10-12 | 2017-03-08 | 北京邮电大学 | A kind of nano graph substrate side epitaxial silicon based quantum dot laser equipment material and preparation method thereof |
| CN107611780A (en) * | 2017-09-22 | 2018-01-19 | 中国科学院半导体研究所 | Si doping InAs/GaAs quantum dot lasers and preparation method thereof |
| CN113178771A (en) * | 2021-04-23 | 2021-07-27 | 湖南汇思光电科技有限公司 | InAs quantum dot laser structure based on GaAsOI substrate and preparation method |
| CN114421283A (en) * | 2022-01-19 | 2022-04-29 | 中国科学院半导体研究所 | Double-doped quantum dot active region epitaxial structure and preparation method and application thereof |
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