CN113872051B - GaAs-based high-power laser and preparation method thereof - Google Patents

GaAs-based high-power laser and preparation method thereof Download PDF

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CN113872051B
CN113872051B CN202010610400.XA CN202010610400A CN113872051B CN 113872051 B CN113872051 B CN 113872051B CN 202010610400 A CN202010610400 A CN 202010610400A CN 113872051 B CN113872051 B CN 113872051B
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algaas
gaas
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CN113872051A (en
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李志虎
张新
夏伟
金光勇
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Shandong Huaguang Optoelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to a GaAs-based high-power laser and a preparation method thereof, which belong to the technical field of photoelectrons and comprise the following steps on a GaAs substrateGaAs low-temperature buffer layer and Al sequentially grown from top to bottom x Ga y Lower As confinement layer, lower AlGaAs waveguide layer, quantum well light emitting region, upper AlGaAs waveguide layer, al X Ga Y The GaAs cap layer is a limiting layer on As, wherein X is more than or equal to 0 and less than or equal to 1, Y is more than or equal to 0 and less than or equal to 1, and Y is more than or equal to 0 and less than or equal to 1; the quantum well light emitting region comprises AlGaAs well layers-AlGaAs barrier layers and GaAsP well layers-AlGaAs barrier layers which are alternately grown. The invention adopts the aluminum-free material GaAsP as the quantum well active region, and can ensure the reliability of long-term operation.

Description

GaAs-based high-power laser and preparation method thereof
Technical Field
The invention relates to a GaAs-based high-power laser and a preparation method thereof, belonging to the technical field of photoelectrons.
Background
The high-power semiconductor laser has the advantages of small volume, light weight, high reliability, long service life and low cost, has a plurality of achievements, wide subject penetration and wide application range, and is widely applied to various fields of national economy such as laser processing, laser medical treatment, laser display and scientific research fields.
The GaAs-based high-power laser is one of semiconductor laser packaging structures, and the specific structure is that single Bar semiconductor lasers are uniformly distributed along the slow axis direction. The horizontal array packaging structure is commonly used as a pumping source of a solid laser, a plurality of semiconductor lasers with horizontal array structures are uniformly distributed around the crystal rod, and the crystal rod is respectively irradiated from different directions, so that higher conversion efficiency can be realized. However, the reflected laser light may also directly irradiate the semiconductor laser chip, resulting in thermal damage to the chip, which may seriously affect the reliability and lifetime of the semiconductor laser, and place higher demands on the heat dissipation capability of the semiconductor laser chip.
Because the active region containing aluminum is easy to oxidize and generate dark line defects, the optical power density which can be born by the cavity surface is not high, so that the highest power and the service life of the laser are reduced, and the influence on the high-power laser which needs to work for a long time is more serious. Compared with aluminum-containing materials, the aluminum-free material has higher heat conductivity and electric conductivity, so that the aluminum-free material has higher cavity surface optical catastrophic power density and is not easy to oxidize, thereby being beneficial to improving the power and the reliability of the device and being suitable for the application field of high performance. For the all-aluminum-free material structure, the advantages are provided, but the conduction band step of the heterojunction formed by the quantum well layer, the barrier and the upper limiting layer is smaller, so that stronger carrier leakage can be caused, the threshold current density is increased, the external quantum efficiency is reduced, the temperature characteristic is poor, and the application of the laser in certain environments and fields is limited.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a GaAs-based high-power laser and a preparation method thereof, and the GaAs-based high-power laser adopts an aluminum-free material GaAsP as a quantum well active region, so that the reliability of long-term operation can be ensured.
The invention adopts the following technical scheme:
a GaAs-based high-power laser comprises a GaAs low-temperature buffer layer and Al which are sequentially grown on a GaAs substrate from bottom to top x Ga y Lower As confinement layer, lower AlGaAs waveguide layer, quantum well light emitting region, upper AlGaAs waveguide layer, al X Ga Y The GaAs cap layer is a limiting layer on As, wherein X is more than or equal to 0 and less than or equal to 1, Y is more than or equal to 0 and less than or equal to 1, and Y is more than or equal to 0 and less than or equal to 1;
the quantum well light emitting region comprises AlGaAs well layers-AlGaAs barrier layers and GaAsP well layers-AlGaAs barrier layers which are alternately grown.
Preferably, one AlGaAs well layer and one AlGaAs barrier layer of the AlGaAs well layer-AlGaAs barrier layer form a pair of quantum wells, one GaAsP well layer and one AlGaAs barrier layer of the GaAsP well layer-AlGaAs barrier layer form a pair of quantum wells, and the quantum well logarithm is 2-10 pairs;
preferably, the quantum well pair number is 2 pairs, and the AlGaAs well layer-AlGaAs barrier layer and GaAsP well layer-AlGaAs barrier layer are each 1 pair, i.e., one AlGaAs well layer-AlGaAs barrier layer and one GaAsP well layer-AlGaAs barrier layer, which can be expressed as (well AlGaAs barrier AlGaAs) + (well GaAsP barrier AlGaAs) as shown in fig. 1.
Preferably, the well layer thickness of the quantum well light emitting region (including the total thickness of the AlGaAs well layer and GaAsP well layer) is 6 to 15nm, and the barrier layer thickness (total thickness of the AlGaAs barrier layer) is 10 to 100nm.
In the present invention, the GaAsP duty cycle is related to the wavelength to be achieved, and may be determined according to the forbidden bandwidth.
The preparation method of the GaAs-based high-power laser comprises the following steps:
(1) Placing GaAs substrate in MOCVD equipment growth chamber, at H 2 Heating to 780+ -30deg.C, baking for 30-50 min, and introducing AsH 3 Removing water and oxygen on the surface of the GaAs substrate to finish surface heat treatment;
AsH 3 the flow is preferably 1000ccm-10000ccm;
(2) Slowly reducing the temperature to 700+/-20 ℃, and continuously introducing TMGa and AsH 3 Growing a GaAs low-temperature buffer layer with the thickness of 50-1000nm on the GaAs substrate;
the slow drop can be set according to the process, in this step, the slope of the temperature slow drop is less than or equal to 45 DEG, and TMGa and AsH are introduced 3 The flow rate of (2) can be determined according to the growth thickness, and the V/III ratio is preferably more than 20;
(3) Maintaining the temperature at 700+ -20deg.C, and continuously introducing TMGa, TMAL, and AsH 3 Growing Al on the GaAs low-temperature buffer layer in the step (2) x Ga y An As lower confinement layer, wherein 0.ltoreq.x, y.ltoreq.1;
introducing TMGa, TMAL and AsH 3 When the V/III ratio is above 20, preferably 90, according to SIMS test, the V/III ratio is 90, the self-doping of C in the material can be inhibited, and the crystal quality of the material growth can be improved;
(4) The temperature is reduced to 650 plus or minus 20 ℃ and is equal to Al x Ga y Growing an n-type AlGaAs lower waveguide layer on the As lower limiting layer;
(5) Maintaining the temperature at 650+/-20 ℃, growing a quantum well light-emitting region on the AlGaAs lower waveguide layer In the step (4), and simultaneously introducing TMIn, wherein the molar flow ratio of In is 3% -10%, preferably 4% -6%, and the pressure strain is optimal at the moment through experimental verification;
the quantum well light-emitting region comprises AlGaAs well layers-AlGaAs barrier layers and GaAsP well layers-AlGaAs barrier layers which are alternately grown, namely AlGaAs well layers-AlGaAs barrier layers and aAsP well layers-AlGaAs barrier layers are alternately grown, one AlGaAs well layer and one AlGaAs barrier layer of the AlGaAs well layers-AlGaAs barrier layers form a pair of quantum wells, one GaAsP well layer and one AlGaAs barrier layer of the GaAsP well layers-AlGaAs barrier layers form a pair of quantum wells, the number of pairs of quantum wells is 2, namely AlGaAs well layers-AlGaAs barrier layers and GaAsP well layers-AlGaAs barrier layers are 1 pair respectively, namely (well AlGaAs barrier AlGaAs) + (well GaAlGaAs) structure;
(6) The temperature is kept at 650+/-20 ℃, and a p-type AlGaAs upper waveguide layer grows on the quantum well light-emitting region;
(7) Raising the temperature to 700+ -20deg.C, and continuously introducing TMGa, TMAL and AsH 3 Growth of Al on AlGaAs upper waveguide layer X Ga Y An As upper confinement layer, wherein 0.ltoreq.X, Y.ltoreq.1;
introducing TMGa, TMAL and AsH 3 When the V/III ratio is above 20, preferably 90, according to SIMS test, the V/III ratio is 90, the self-doping of C in the material can be inhibited, and the crystal quality of the material growth can be improved;
(8) Reducing the temperature to 550+/-20 ℃, and continuously introducing TMGa and AsH 3 (preferably, the V/III ratio is 20 or more), in Al X Ga Y Growing a GaAs cap layer on the As upper limiting layer;
(9) And after the epitaxial material is grown, a finished LD device is manufactured by using a conventional LD packaging technology.
Preferably, the thickness of the GaAs low-temperature buffer layer is 100-300nm, and the doping concentration is 1E17-5E18 atoms/cm 3 ；
Preferably, the thickness of the GaAs low-temperature buffer layer is 200nm, and the doping concentration is 1E18 atoms/cm 3 ；
Preferably, the AlGaAs doping concentration in step (3) is 1E17-5E18 atoms/cm 3 X is 0.3-0.5, y is 0.5-0.7;
preferably, the AlGaAs in step (3) has a doping concentration of 5E17 atoms/cm 3 X is 0.35, y is 0.65, al x Ga y The thickness of the As lower confinement layer was 0.3. Mu.m.
Preferably, the thickness of the AlGaAs lower waveguide layer in the step (4) is 0.5-3 μm, and the doping concentration is 1E16-5E19 atoms/cm 3 ；
Preferably, the AlGaAs lower waveguide layer comprises two layers, namely a first-grown waveguide layer and a later-grown SiAlGaAs layer or TeAlGaAs layer, wherein the thickness of the AlGaAs lower waveguide is 2 mu m, the thickness of the first-grown waveguide layer is 1 mu m, and the doping concentration is 1E17 raw materialsSon/cm 3 The thickness of the SiAlGaAs layer or the TeAlGaAs layer which is grown later is 1 μm, and the SiAlGaAs layer is an undoped layer.
Preferably, in the step (5), the thickness of the quantum well light-emitting region is 0.1-0.3 μm, the quantum well logarithm is 2-10 pairs, and the molar ratio of In is 1% -10%;
preferably, the thickness of the quantum well light-emitting region is 0.1 μm, the quantum well logarithm is 2 pairs, namely an AlGaAs well layer-AlGaAs barrier layer and a GaAsP well layer-AlGaAs barrier layer, and the In mole ratio is 5% -7%.
Preferably, the thickness of the AlGaAs upper waveguide layer in the step (6) is 0.1-3 μm, and the doping concentration is 1E18-5E18 atoms/cm 3 ；
Preferably, the thickness of the waveguide layer on AlGaAs is 1 μm, and the doping concentration of 1E17 atoms/cm is 1/2 of the thickness of the waveguide layer away from the quantum well light-emitting region (i.e., 0.5 μm away from the quantum well light-emitting region) 3 The 1/2 thickness of the quantum well light-emitting region (namely 0.5 μm of the quantum well light-emitting region) is undoped, and the doping mode can improve the current expansion of the carrier concentration, and the working voltage can be reduced by 5% -15% under the same condition.
Preferably, the AlGaAs of step (7) has a doping concentration of 1E17-5E18 atoms/cm 3 X is 0.3-0.5, Y is 0.5-0.7,
preferably, the AlGaAs of step (7) has a doping concentration of 5E18 atoms/cm 3 X is 0.5, Y is 0.5, al X Ga Y The As upper confinement layer had a thickness of 1 μm.
Preferably, the pressure of the MOCVD apparatus in the step (1) is 50-200mbar;
the GaAs low-temperature buffer layer and Al x Ga y The N-type doping sources of the As lower limiting layer and the AlGaAs lower waveguide layer are Si 2 H 6 Or DETe; the AlGaAs upper waveguide layer and Al X Ga Y The As upper limiting layer and the GaAs cap layer are respectively doped with DEZn and CBr 4 Or CP 2 Mg; the doping source is introduced by introducing AsH 3 Continuously introducing the designed doping source flow, stopping introducing at intervals of 3-10 s (preferably 5 s), and continuously introducing the rest time periods;
preferably, H 2 The flow rate of (2) is 8000-50000sccm; the purity of TMGa is 99.9999%, and the temperature of a constant temperature tank of TMGa is (-5) to 15 ℃; the purity of TMIn is 99.9999%, and the temperature of a constant temperature tank of TMIn is 15+/-5 ℃; the purity of TMAL is 99.9999%, and the temperature of a constant temperature tank of TMAL is 10-28 ℃; ash (AsH) 3 The purity of (2) is 99.9999%; si (Si) 2 H 6 The purity of (2) is 99.9999%; cp 2 The purity of Mg is 99.9999%, cp 2 The temperature of the constant temperature bath of Mg is 0-25 ℃ and CBr 4 The temperature of the constant temperature tank is 0-10 ℃.
The present invention is not limited to the details of the prior art.
The beneficial effects of the invention are as follows:
the invention adopts aluminum-free material GaAsP as a part of the quantum well active region, adopts low-aluminum AlGaAs as an upper waveguide layer and a lower waveguide layer, and adopts high-aluminum-component-containing material Al with larger conduction band order x Ga y As and Al X Ga Y As is used As a lower limiting layer and an upper limiting layer, the active region structure is made of aluminum-free materials, and long-term working reliability is ensured. The larger conduction band steps between the quantum well light-emitting region and the waveguide layer and between the quantum well light-emitting region and the upper limiting layer can prevent carriers from overflowing, so that the threshold current density is reduced, and the laser can work at high temperature.
The GaAsP/AlGaAs quantum well is tensile strain on the junction plane, when the strain quantity is large enough and the quantum effect of the well is not strong, the light hole of the valence band can move to the upper part of the heavy hole, and the output laser is TM polarized, so that the LD in the TM mode can be used for crystals with special requirements on pumping light.
In addition, the relaxation of the GaAsP/AlGaAs tensile strain quantum well at the end face forms a non-absorption window, so that the absorption of photons by the end face can be reduced.
Drawings
FIG. 1 is a schematic diagram of a GaAs-based high-power laser of the present invention;
wherein, the 1-GaAs low temperature buffer layer and the 2-Al x Ga y An As lower confinement layer, a 3-AlGaAs lower waveguide layer, a 4-quantum well light emitting region, a 5-AlGaAs upper waveguide layer, 6-Al X Ga Y Upper As confinement layer7-GaAs cap layer.
The specific embodiment is as follows:
in order to make the technical problems, technical solutions and advantages to be solved by the present invention more apparent, the following detailed description will be given with reference to the accompanying drawings and specific embodiments, but not limited thereto, and the present invention is not fully described and is according to the conventional technology in the art.
Example 1:
a GaAs-based high-power laser comprises a GaAs low-temperature buffer layer 1 and Al which are sequentially grown on a GaAs substrate from bottom to top x Ga y An As lower confinement layer 2, an AlGaAs lower waveguide layer 3, a quantum well light emitting region 4, an AlGaAs upper waveguide layer 5, al X Ga Y An As upper limiting layer 6 and a GaAs cap layer 7, wherein X, Y and Y are respectively equal to or less than 0 and equal to or less than 1, and 0 and less than or equal to X and Y and less than or equal to 1;
the quantum well light-emitting region comprises AlGaAs well layer-AlGaAs barrier layers and GaAsP well layer-AlGaAs barrier layers which are alternately grown, wherein one AlGaAs well layer and one AlGaAs barrier layer of the AlGaAs well layer-AlGaAs barrier layers form a pair of quantum wells, one GaAsP well layer and one AlGaAs barrier layer of the GaAsP well layer-AlGaAs barrier layers form a pair of quantum wells, the number of pairs of quantum wells is 2, and the AlGaAs well layer-AlGaAs barrier layers and the GaAsP well layer-AlGaAs barrier layers are 1 pair respectively, namely one AlGaAs well layer-AlGaAs barrier layer and one GaAsP well layer-AlGaAs barrier layer, and can be expressed as (well AlGaAs) + (well AlGaAs barrier AlGaAs) as shown in fig. 1;
the thickness of the well layer of the quantum well light-emitting region (comprising the total thickness of the AlGaAs well layer and the GaAsP well layer) is 6-15 nm, and the thickness of the barrier layer (the total thickness of the AlGaAs barrier layer) is 10-100 nm.
Example 2:
the preparation method of the GaAs-based high-power laser comprises the following steps:
(1) Placing GaAs substrate in MOCVD equipment growth chamber, at H 2 Heating to 780+ -30deg.C, baking for 30-50 min, and introducing AsH 3 Removing water and oxygen on the surface of the GaAs substrate to finish surface heat treatment;
AsH 3 the flow is 1000ccm-10000ccm;
(2) Slowly reducing the temperature to 700+/-20 ℃, and continuously introducing TMGa and AsH 3 Growth thickness on GaAs substrateA GaAs low-temperature buffer layer 1 with the thickness of 50-1000 nm;
(3) Maintaining the temperature at 700+ -20deg.C, and continuously introducing TMGa, TMAL, and AsH 3 Growing Al on the GaAs low temperature buffer layer 1 of the step (2) x Ga y An As lower confinement layer 2, wherein 0.ltoreq.x, y.ltoreq.1;
(4) The temperature is reduced to 650 plus or minus 20 ℃ and is equal to Al x Ga y Growing an n-type AlGaAs lower waveguide layer 3 on the As lower confinement layer 2;
(5) The temperature is kept at 650+/-20 ℃, a quantum well light-emitting region 4 grows on the AlGaAs lower waveguide layer 3 In the step (4), and meanwhile TMIn is introduced, wherein the molar flow ratio of In is 4% -6%;
the quantum well light-emitting region comprises AlGaAs well layer-AlGaAs barrier layers and GaAsP well layer-AlGaAs barrier layers which are alternately grown, namely AlGaAs well layer-AlGaAs barrier layers and aAsP well layer-AlGaAs barrier layers are alternately grown, one AlGaAs well layer and one AlGaAs barrier layer of the AlGaAs well layer-AlGaAs barrier layers form a pair of quantum wells, one GaAsP well layer and one AlGaAs barrier layer of the GaAsP well layer-AlGaAs barrier layers form a pair of quantum wells, the number of pairs of quantum wells is 2, namely the AlGaAs well layer-AlGaAs barrier layers and the GaAsP well layer-AlGaAs barrier layers are 1 pair, namely (well AlGaAs barrier AlGaAs) + (well GaAlGaAs) structures, as shown in figure 1;
(6) The temperature is kept at 650+/-20 ℃, and a p-type AlGaAs upper waveguide layer 5 is grown on the quantum well light-emitting region;
(7) Raising the temperature to 700+ -20deg.C, and continuously introducing TMGa, TMAL and AsH 3 Growth of Al on AlGaAs upper waveguide layer X Ga Y An As upper confinement layer, wherein 0.ltoreq.X, Y.ltoreq.1;
(8) Reducing the temperature to 550+/-20 ℃, and continuously introducing TMGa and AsH 3 In Al X Ga Y Growing a GaAs cap layer on the As upper limiting layer;
(9) And after the epitaxial material is grown, a finished LD device is manufactured by using a conventional LD packaging technology.
Example 3:
a preparation method of a GaAs-based high-power laser is shown in embodiment 2, except that the thickness of a GaAs low-temperature buffer layer 1 is 200nm, and the doping concentration is 1E18 atoms/cm 3 ；
The doping concentration of AlGaAs in the step (3) is 5E17 atoms/cm 3 X is 0.35, y is 0.65, al x Ga y The thickness of the As lower confinement layer 2 was 0.3 μm;
the AlGaAs lower waveguide layer 3 comprises two layers, namely a first-grown waveguide layer and a later-grown SiAlGaAs layer or TeAlGaAs layer, wherein the thickness of the AlGaAs lower waveguide is 2 mu m, the thickness of the first-grown waveguide layer is 1 mu m, and the doping concentration is 1E17 atoms/cm 3 The thickness of the SiAlGaAs layer or the TeAlGaAs layer which is grown later is 1 μm, and the SiAlGaAs layer is an undoped layer.
The thickness of the quantum well light-emitting region 4 is 0.1 μm, the number of pairs of quantum wells is 2, namely an AlGaAs well layer-AlGaAs barrier layer and a GaAsP well layer-AlGaAs barrier layer, and the In mole ratio is 5% -7%.
The thickness of the waveguide layer 5 on AlGaAs is 1 μm, and the doping concentration of 1E17 atoms/cm is 1/2 of the thickness away from the quantum well light-emitting region (i.e., 0.5 μm away from the quantum well light-emitting region) 3 The 1/2 thickness near the quantum well light emitting region (i.e., 0.5 μm near the quantum well light emitting region) is undoped.
The doping concentration of AlGaAs in the step (7) is 5E18 atoms/cm 3 X is 0.5, Y is 0.5, al X Ga Y The As upper confinement layer 6 has a thickness of 1 μm.
Example 4:
a method for producing GaAs-based high-power laser, as shown in example 2, except that the MOCVD equipment in step (1) has a pressure of 50 to 200mbar;
GaAs low temperature buffer layer 1, al x Ga y The N-type doping sources of the As lower limiting layer 2 and the AlGaAs lower waveguide layer 3 are Si 2 H 6 Or DETe; alGaAs upper waveguide layer 5, al X Ga Y The As upper limiting layer 6 and the GaAs cap layer 7 are respectively doped with DEZn and CBr 4 Or CP 2 Mg; the doping source is introduced by introducing AsH 3 Continuously introducing the designed doping source flow, stopping introducing at intervals of 5 seconds, and continuously introducing the rest time periods;
H 2 the flow rate of the catalyst is 8000-50000sccm; the purity of TMGa is 99.9999%, and the temperature of a constant temperature tank of TMGa is (-5) to 15 ℃; TMIn purity of 99.9999%, TMThe temperature of the constant temperature bath of In is 15+/-5 ℃; the purity of TMAL is 99.9999%, and the temperature of a constant temperature tank of TMAL is 10-28 ℃; ash (AsH) 3 The purity of (2) is 99.9999%; si (Si) 2 H 6 The purity of (2) is 99.9999%; cp 2 The purity of Mg is 99.9999%, cp 2 The temperature of the constant temperature bath of Mg is 0-25 ℃ and CBr 4 The temperature of the constant temperature tank is 0-10 ℃.
Notably, gaAs and GaAsP materials of the present invention are lattice mismatched heteroepitaxial materials that maintain elastic strain at energies below the energy at which dislocations are formed only when the epitaxial layer is sufficiently thin. Therefore, when designing GaAsP quantum well material, the critical thickness h determined by mismatch stress caused by different lattice constants is considered first c The thickness of the epitaxial layer is required to be smaller than the critical thickness h c 。
Critical thickness h c The relation between critical thickness and mismatch degree f in the elastic strain range can be described by estimating a mechanical balance model of Matthews, as shown in a formula (1-1), wherein a is the lattice constant of a strain layer, the mismatch degree f=Δa/a, v is Poisson ratio v=C11/(C11+C12), C11 and C12 are elastic coefficients of materials, and the dependence relation between the critical thickness and the lattice mismatch degree can be theoretically calculated according to the formula;
Figure BDA0002561920240000071
however, in the actual production process, the actual critical thickness is far smaller than the theoretical calculated value h due to the influence of other factors in epitaxial growth, such as fluctuation of the quantum well thickness c In an actual process experiment, the theoretical calculation result can provide a basic basis for structural design and a directional reference for design growth thickness.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the present invention.

Claims (10)

1. A preparation method of a GaAs-based high-power laser is characterized in that the laser comprises a GaAs low-temperature buffer layer and Al which are sequentially grown on a GaAs substrate from bottom to top x Ga y Lower As confinement layer, lower AlGaAs waveguide layer, quantum well light emitting region, upper AlGaAs waveguide layer, al X Ga Y The GaAs cap layer is a limiting layer on As, wherein X is more than or equal to 0 and less than or equal to 1, Y is more than or equal to 0 and less than or equal to 1, and Y is more than or equal to 0 and less than or equal to 1;
the quantum well light-emitting region comprises AlGaAs well layers-AlGaAs barrier layers and GaAsP well layers-AlGaAs barrier layers which are alternately grown;
the AlGaAs well layer-AlGaAs barrier layer comprises a pair of quantum wells, the GaAsP well layer and the AlGaAs barrier layer comprise a pair of quantum wells, and the quantum well logarithm is 2-10 pairs;
the preparation method comprises the following steps:
(1) Placing GaAs substrate in MOCVD equipment growth chamber, at H 2 Heating to 780+ -30deg.C, baking for 30-50 min, and introducing AsH 3 Removing water and oxygen on the surface of the GaAs substrate to finish surface heat treatment;
(2) Slowly reducing the temperature to 700+/-20 ℃, and continuously introducing TMGa and AsH 3 Growing a GaAs low-temperature buffer layer with the thickness of 50-1000nm on the GaAs substrate;
(3) Maintaining the temperature at 700+ -20deg.C, and continuously introducing TMGa, TMAL, and AsH 3 Growing Al on the GaAs low-temperature buffer layer in the step (2) x Ga y An As lower confinement layer, wherein 0.ltoreq.x, y.ltoreq.1;
(4) The temperature is reduced to 650 plus or minus 20 ℃ and is equal to Al x Ga y Growing an n-type AlGaAs lower waveguide layer on the As lower limiting layer;
(5) The temperature is kept at 650+/-20 ℃, a quantum well light-emitting region grows on the AlGaAs lower waveguide layer in the step (4), and TMIn is introduced at the same time;
the quantum well light-emitting region comprises AlGaAs well layers-AlGaAs barrier layers and GaAsP well layers-AlGaAs barrier layers which are alternately grown, wherein one AlGaAs well layer and one AlGaAs barrier layer of the AlGaAs well layers-AlGaAs barrier layers form a pair of quantum wells, one GaAsP well layer and one AlGaAs barrier layer of the GaAsP well layers-AlGaAs barrier layers form a pair of quantum wells, and the number of pairs of quantum wells is 2, namely 1 pair of AlGaAs well layers-AlGaAs barrier layers and 1 pair of GaAsP well layers-AlGaAs barrier layers;
(6) The temperature is kept at 650+/-20 ℃, and a p-type AlGaAs upper waveguide layer grows on the quantum well light-emitting region;
(7) Raising the temperature to 700+ -20deg.C, and continuously introducing TMGa, TMAL and AsH 3 Growth of Al on AlGaAs upper waveguide layer X Ga Y An As upper confinement layer, wherein 0.ltoreq.X, Y.ltoreq.1;
(8) Reducing the temperature to 550+/-20 ℃, and continuously introducing TMGa and AsH 3 In Al X Ga Y Growing a GaAs cap layer on the As upper limiting layer;
(9) After the epitaxial material is grown, a finished LD device is manufactured by utilizing a conventional LD packaging technology;
when designing GaAsP quantum well material, the critical thickness h determined by mismatch stress caused by different lattice constants is considered c The thickness of the epitaxial layer is smaller than the critical thickness h c ；
Critical thickness h c The relation between the critical thickness and the mismatch degree f in the elastic strain range is described as shown in a formula (1-1), wherein a is the lattice constant of the strain layer, the mismatch degree f=Δa/a, v is poisson ratio v=c11/(c11+c12), C11 and C12 are elastic coefficients of materials, k is the boltzmann constant, and the dependence relation between the critical thickness and the lattice mismatch degree is calculated according to the theory of the formula (1-1);
Figure FDA0004115540840000021
2. the method for manufacturing a GaAs-based high power laser according to claim 1, wherein the well layer thickness of the quantum well light emitting region is 6 to 15nm and the barrier layer thickness is 10 to 100nm.
3. The method for preparing the GaAs-based high-power laser according to claim 2, wherein the thickness of the GaAs low-temperature buffer layer is 100-300nm, and the doping concentration is 1E17-5E18 atoms/cm 3 ；
The doping concentration of AlGaAs in the step (3) is 1E17-5E18 atoms/cm 3 X is 0.3-0.5, y is 0.5-0.7.
4. The method for producing a GaAs-based high power laser according to claim 3, wherein the thickness of the lower waveguide layer of AlGaAs in the step (4) is 0.5 to 3 μm, and the doping concentration is 1E16 to 5E19 atoms/cm 3 。
5. The method of manufacturing a GaAs based high power laser according to claim 4, wherein the AlGaAs lower waveguide layer comprises two layers, respectively a first grown waveguide layer and a second grown SiAlGaAs layer or TeAlGaAs layer, the AlGaAs lower waveguide layer has a thickness of 2 μm, the first grown waveguide layer has a thickness of 1 μm, and the doping concentration is 1E17 atoms/cm 3 The thickness of the SiAlGaAs layer or the TeAlGaAs layer which is grown later is 1 μm, and the SiAlGaAs layer is an undoped layer.
6. The method for preparing a GaAs-based high-power laser according to claim 5, wherein the quantum well light emitting region In step (5) has a thickness of 0.1-0.3 μm, a quantum well pair number of 2-10 pairs, and a molar ratio of In of 1% -10%.
7. The method for manufacturing a GaAs-based high-power laser according to claim 6, wherein the quantum well light emitting region has a thickness of 0.1 μm and the quantum well pair number is 2, i.e., one AlGaAs well layer-AlGaAs barrier layer and one GaAsP well layer-AlGaAs barrier layer, and the In mole ratio is 5% -7%.
8. The method for producing a GaAs-based high power laser device according to claim 7, wherein the thickness of the waveguide layer on AlGaAs in the step (6) is 0.1 to 3 μm, and the doping concentration is 1E18 to 5E18 atoms/cm 3 。
9. The method for producing a GaAs-based high-power laser according to claim 8, wherein the doping concentration of AlGaAs in step (7) is 1E17 to 5E18 atoms/cm 3 X is 0.3-0.5, Y is 0.5-0.7, al X Ga Y The As upper confinement layer had a thickness of 1 μm.
10. The method for producing a GaAs-based high-power laser according to claim 9, wherein the pressure of the MOCVD equipment in step (1) is 50 to 200mbar;
the GaAs low-temperature buffer layer and Al x Ga y The N-type doping sources of the As lower limiting layer and the AlGaAs lower waveguide layer are Si 2 H 6 Or DETe; the AlGaAs upper waveguide layer and Al X Ga Y The As upper limiting layer and the GaAs cap layer are respectively doped with DEZn and CBr 4 Or CP 2 Mg; the doping source is introduced by introducing AsH 3 Continuously introducing the designed doping source flow, stopping introducing at intervals of 3-10 s, and continuously introducing the rest time periods;
H 2 the flow rate of the catalyst is 8000-50000sccm; the purity of TMGa is 99.9999%, and the temperature of a constant temperature tank of TMGa is (-5) to 15 ℃; the purity of TMIn is 99.9999%, and the temperature of a constant temperature tank of TMIn is 15+/-5 ℃; the purity of TMAL is 99.9999%, and the temperature of a constant temperature tank of TMAL is 10-28 ℃; ash (AsH) 3 The purity of (2) is 99.9999%; si (Si) 2 H 6 The purity of (2) is 99.9999%; cp 2 The purity of Mg is 99.9999%, cp 2 The temperature of the constant temperature bath of Mg is 0-25 ℃ and CBr 4 The temperature of the constant temperature tank is 0-10 ℃.
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