CN112563376A - Diode epitaxial structure - Google Patents
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
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- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Abstract
The invention provides a diode epitaxial structure, which solves the problems of low waveguide refractive index and high optical loss of the conventional diode epitaxial structure. The diode epitaxial structure comprises an N-type GaAs substrate layer, an N-type GaAs buffer layer and an N-type Al layer which are sequentially arranged from bottom to topXGa(1‑X)Lower limit of As layer and AlXGa(1‑X)As waveguide layer and GaYIn(1‑Y)As quantum well layer, GaAs quantum barrier layer, GaYIn(1‑Y)As quantum well layer, GaAs quantum barrier layer, and AlXGa(1‑X)As waveguide layer and P-type AlXGa(1‑X)As lower limiting layer, P-type AlXGa(1‑X)As lower limiting layer, P-type AlXGa(1‑X)Under AsThe current spreading layer comprises a limiting layer, a P-type GaAs current spreading layer and a P-type GaAs electrode contact layer. The structure reduces the waveguide barrier, increases the refractive index of the waveguide, and enhances the constraint of the waveguide to light, thereby improving the luminous efficiency of the device.
Description
Technical Field
The invention belongs to the field of semiconductor illumination, and particularly relates to a diode epitaxial structure.
Background
A light emitting diode is a common photonic device, and a core portion of the light emitting diode is a chip composed of a P-type semiconductor and an N-type semiconductor, and a transition layer called a PN junction is arranged between the P-type semiconductor and the N-type semiconductor. In the PN junction of some semiconductor materials, the injected minority carriers and majority carriers when they recombine release excess energy in the form of light, thereby directly converting electrical energy into light energy.
The light emitting diode is an epitaxial structure generated by adopting an epitaxial growth mode, the epitaxial structure mainly comprises a substrate, an N-type layer for providing electrons, a P-type layer for providing holes and an active layer of a composite region, the epitaxial structure is mainly applied to backlight sources of optical wireless communication, data centers, servers, beauty products and the like, and blue, green and white lights In the backlight sources are mainly formed by depositing materials (Al, Ga, In, As and P) on a gallium arsenide substrate by adopting a metal organic chemical vapor deposition method. However, the conventional diode epitaxial structure has the problems of low waveguide refractive index, high optical loss, high ohmic contact resistance and the like.
Disclosure of Invention
The invention aims to solve the problems of low waveguide refractive index and high optical loss of the conventional diode epitaxial structure and provides a diode epitaxial structure.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a diode epitaxial structure comprises an N-type GaAs substrate layer, an N-type GaAs buffer layer and an N-type Al layer which are sequentially arranged from bottom to topXGa(1-X)Lower limit of As layer and AlXGa(1-X)As waveguide layer and GaYIn(1-Y)As quantum well layer, GaAs quantum barrier layer, GaYIn(1-Y)As quantum well layerGaAs quantum barrier layer, and AlXGa(1-X)As waveguide layer and P-type AlXGa(1-X)As lower limiting layer, P-type AlXGa(1-X)As lower limiting layer, P-type AlXGa(1-X)The GaAs electrode comprises an As lower limiting layer, a P-type GaAs current expanding layer and a P-type GaAs electrode contact layer.
Furthermore, from bottom to top, the doping concentration of the N-type GaAs substrate layer is 1E (18) to 4E (18), the doping concentration of the N-type GaAs buffer layer is 0.8E (18) to 1.5E (18), and the N-type Al isXGa(1-X)The doping concentration of the As lower limit layer is 0.8E (18) to 1.5E (18); p type AlXGa(1-X)The As lower limiting layer has a doping concentration of 0.8E (18) to 1.2E (18), and P-type AlXGa(1-X)The As lower limiting layer has a doping concentration of 0.8E (18) to 1.2E (18), and P-type AlXGa(1-X)The As lower limiting layer has a doping concentration of 2E (18) to 3E (18), the P-type GaAs current spreading layer has a doping concentration of 2E (18) to 3E (18), and the P-type GaAs electrode contact layer has a doping concentration of 1E (19) to 2E (19).
Further, from bottom to top, N-type AlXGa(1-X)X in the As lower limit layer is 0.09-0.11, and AlXGa(1-X)X in the As waveguide layer is 0.09-0.11, GaYIn(1-Y)Y is 0.85 in As quantum well layer, GaYIn(1-Y)Y is 0.85 in As quantum well layer, AlXGa(1-X)X in the As waveguide layer is 0.09-0.11, P type AlXGa(1-X)X in the As lower limiting layer is 0.09-0.11, P type AlXGa(1-X)X in the As lower limiting layer is 0.09-0.11, P type AlXGa(1-X)X in the As lower limiting layer is 0.08-0.09.
Further, from bottom to top, the thickness of the N-type GaAs substrate layer is 350-625 um, the thickness of the N-type GaAs buffer layer is 0.15-0.2 um, and the thickness of the N-type Al buffer layer is N-type AlXGa(1-X)The thickness of the As lower limit layer is 0.5-0.7 um, AlXGa(1-X)The thickness of the As waveguide layer is 0.02-0.03 um, GaYIn(1-Y)The thickness of the As quantum well layer is 7-8 nm, the thickness of the GaAs quantum barrier layer is 50-70 nm, and the GaYIn(1-Y)The thickness of the As quantum well layer is 7-8 nm, the thickness of the GaAs quantum barrier layer is 50-70 nm, and the thickness of the Al quantum well layer isXGa(1-X)The thickness of the As waveguide layer is 0.3-0.5 um, and the P type AlXGa(1-X)The thickness of the As lower limiting layer is 0.5-0.7 um, and the P type AlXGa(1-X)The thickness of the As lower limiting layer is 0.2-0.3 um, and the P type AlXGa(1-X)The thickness of the As lower limiting layer is 2.5-3.5 um, the thickness of the P-type GaAs current expanding layer is 3-4 um, and the thickness of the P-type GaAs electrode contact layer is 3-4 um.
Furthermore, the reaction temperature is 550-700 ℃, and the pressure of the reaction chamber is 40-50 torr.
Further, the pressure of the reaction chamber was 42 torr.
Compared with the prior art, the technical scheme of the invention has the following technical effects:
1. the diode epitaxial structure achieves the effects of reducing the barrier height and reducing the well-barrier mismatch effect by adjusting the structural components of substances, thereby improving the refractive index, for example, reducing the components of a waveguide layer Al; meanwhile, the structure improves the quality of an active layer well by increasing the growth temperature and improving the five-group/three-group ratio; in addition, the structure increases the whole light output quantity by increasing the thickness of the waveguide, thereby reducing the loss of light and improving the luminous efficiency of the device.
2. The structure of the invention can improve the lattice quality of the epitaxial structure by arranging the epitaxial structure, including 2-13 layers of growth, and simultaneously, the structure of the invention increases the carrier concentration of the contact layer and improves the ohmic contact quality.
3. The diode epitaxial structure of the invention reduces the material composition from Al0.4Ga0.6As to Al0.1Ga0.9As by modifying the material composition, the material changes, the corresponding refractive index is increased, and the potential barrier is reduced.
Drawings
Fig. 1 is a structural diagram of a diode epitaxial structure according to the present invention.
Detailed Description
The invention is described in further detail below with reference to the figures and specific embodiments.
The invention provides a diode epitaxial structure, in particular to a 930-950 nm diode epitaxial structure, preferably a 940nm diode epitaxial structure, which reduces a waveguide barrier, increases the refractive index of a waveguide, and enhances the constraint of the waveguide on light, thereby improving the luminous efficiency of a device.
As shown in FIG. 1, the diode epitaxial structure of the invention comprises an N-type GaAs substrate layer, an N-type GaAs buffer layer and an N-type Al layer which are arranged from bottom to top in sequenceXGa(1-X)Lower limit of As layer and AlXGa(1-X)As waveguide layer and GaYIn(1-Y)As quantum well layer, GaAs quantum barrier layer, GaYIn(1-Y)As quantum well layer, GaAs quantum barrier layer, and AlXGa(1-X)As waveguide layer and P-type AlXGa(1-X)As lower limiting layer, P-type AlXGa(1-X)As lower limiting layer, P-type AlXGa(1-X)The GaAs electrode comprises an As lower limiting layer, a P-type GaAs current expanding layer and a P-type GaAs electrode contact layer.
The process growth layer of the diode epitaxial structure and the function of each layer are as follows:
n-type GaAs substrate layer: doping 1E (18) -4E (18); doping type: n; thickness: 350um to 625 um; the function is as follows: and growing a base layer on the epitaxial layer.
N-type GaAs buffer layer: doping 0.8E (18) -1.5E (18); doping type: n; thickness: 0.15-0.2 um; the function is as follows: and (4) carrying out surface connection and surface micro-processing on the substrate and the functional layer.
N type AlXGa(1-X)The As lower limit layer comprises the following components: x is 0.09-0.11; doping: 0.8E (18) to 1.5E (18); doping type: n; thickness: 0.5-0.7 um; the function is as follows: an electron supply layer.
AlXGa(1-X)An As waveguide layer: the components are as follows: x is 0.09-0.11; doping: none; doping type: none; thickness: 0.02-0.03 um; the function is as follows: waveguide layer, electron blocking layer.
GaYIn(1-Y)An As quantum well layer: the components are as follows: y is 0.85; doping: none; doping type: none; thickness: 7-8 nm; the function is as follows: providing a carrier recombination site and increasing the carrier recombination probability.
GaAs quantum barrier layer: the components are as follows: none; doping: none; doping type: none; thickness: 50-70 nm; the function is as follows: the carriers are bound, and the carrier recombination probability is increased.
GaYIn(1-Y)An As quantum well layer: the components are as follows: y is 0.85; doping: none; doping type: none; thickness: 7-8 nm; the function is as follows: providing a carrier recombination site and increasing the carrier recombination probability.
GaAs quantum barrier layer: the components are as follows: none; doping: none; doping type: none; thickness: 50-70 nm; the function is as follows: the carriers are bound, and the carrier recombination probability is increased.
AlXGa(1-X)An As waveguide layer: the components are as follows: x is 0.09-0.11; doping: none; doping type: none; thickness: 0.3-0.5 um; the function is as follows: waveguide layer, hole blocking layer.
P type AlXGa(1-X)As lower limiting layer: the components are as follows: x is 0.09-0.11; doping: 0.8E (18) to 1.2E (18); doping type: p; thickness: 0.5-0.7 um; the function is as follows: a hole-providing layer.
P type AlXGa(1-X)As lower limiting layer: the components are as follows: x is 0.09-0.11; doping: 0.8E (18) to 1.2E (18); doping type: p; thickness: 0.2-0.3 um; the function is as follows: a hole-providing layer.
P type AlXGa(1-X)As lower limiting layer: the components are as follows: x is 0.08-0.09; doping: 2E (18) to 3E (18); doping type: p; thickness: 2.5-3.5 um; the function is as follows: a hole-providing layer, a current spreading layer.
P-type GaAs current spreading layer: the components are as follows: none; doping: 2E (18) to 3E (18); doping type: p; thickness: 3-4 um; the function is as follows: a current spreading layer.
P-type GaAs electrode contact layer: the components are as follows: none; doping: 1E (19) to 2E (19); doping type: p; thickness: 3-4 um; the function is as follows: forming a tunnel junction with the metal.
The epitaxial structure is grown on the GaAs substrate by using MOCVD equipment, and the growth components of the structure grow from bottom to top in sequence, and the growth is briefly described below.
Claims (6)
1. A diode epitaxial structure, comprising: comprises an N-type GaAs substrate layer, an N-type GaAs buffer layer and an N-type Al layer which are arranged from bottom to top in sequenceXGa(1-X)Lower limit of As layer and AlXGa(1-X)As waveguide layer and GaYIn(1-Y)As quantum well layer, GaAs quantum barrier layer, GaYIn(1-Y)As quantum well layer, GaAs quantum barrier layer, and AlXGa(1-X)As waveguide layer and P-type AlXGa(1-X)As lower limiting layer, P-type AlXGa(1-X)As lower limiting layer, P-type AlXGa(1-X)The GaAs electrode comprises an As lower limiting layer, a P-type GaAs current expanding layer and a P-type GaAs electrode contact layer.
2. Diode epitaxy structure according to claim 1, characterised in that: from bottom to top, the doping concentration of the N-type GaAs substrate layer is 1E (18) to 4E (18), the doping concentration of the N-type GaAs buffer layer is 0.8E (18) to 1.5E (18), and the N-type AlXGa(1-X)The doping concentration of the As lower limit layer is 0.8E (18) to 1.5E (18); p type AlXGa(1-X)The As lower limiting layer has a doping concentration of 0.8E (18) to 1.2E (18), and P-type AlXGa(1-X)The As lower limiting layer has a doping concentration of 0.8E (18) to 1.2E (18), and P-type AlXGa(1-X)The As lower limiting layer has a doping concentration of 2E (18) to 3E (18), the P-type GaAs current spreading layer has a doping concentration of 2E (18) to 3E (18), and the P-type GaAs electrode contact layer has a doping concentration of 1E (19) to 2E (19).
3. Diode epitaxy structure according to claim 1 or 2, characterized in that: from bottom to top, N-type AlXGa(1-X)X in the As lower limit layer is 0.09-0.11, and AlXGa(1-X)X in the As waveguide layer is 0.09-0.11, GaYIn(1-Y)Y is 0.85 in As quantum well layer, GaYIn(1-Y)Y is 0 in As quantum well layer.85，AlXGa(1-X)X in the As waveguide layer is 0.09-0.11, P type AlXGa(1-X)X in the As lower limiting layer is 0.09-0.11, P type AlXGa(1-X)X in the As lower limiting layer is 0.09-0.11, P type AlXGa(1-X)X in the As lower limiting layer is 0.08-0.09.
4. A diode epitaxial structure according to claim 3, wherein: from bottom to top, the thickness of the N-type GaAs substrate layer is 350-625 um, the thickness of the N-type GaAs buffer layer is 0.15-0.2 um, and the thickness of the N-type Al buffer layer isXGa(1-X)The thickness of the As lower limit layer is 0.5-0.7 um, AlXGa(1-X)The thickness of the As waveguide layer is 0.02-0.03 um, GaYIn(1-Y)The thickness of the As quantum well layer is 7-8 nm, the thickness of the GaAs quantum barrier layer is 50-70 nm, and the GaYIn(1-Y)The thickness of the As quantum well layer is 7-8 nm, the thickness of the GaAs quantum barrier layer is 50-70 nm, and the thickness of the Al quantum well layer isXGa(1-X)The thickness of the As waveguide layer is 0.3-0.5 um, and the P type AlXGa(1-X)The thickness of the As lower limiting layer is 0.5-0.7 um, and the P type AlXGa(1-X)The thickness of the As lower limiting layer is 0.2-0.3 um, and the P type AlXGa(1-X)The thickness of the As lower limiting layer is 2.5-3.5 um, the thickness of the P-type GaAs current expanding layer is 3-4 um, and the thickness of the P-type GaAs electrode contact layer is 3-4 um.
5. Diode epitaxy structure according to claim 4, characterized in that: the reaction temperature is 550-700 ℃, and the pressure of the reaction chamber is 40-50 torr.
6. Diode epitaxy structure according to claim 5, characterized in that: the pressure in the reaction chamber was 42 torr.
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| CN105633797A (en) * | 2016-03-22 | 2016-06-01 | 中山德华芯片技术有限公司 | High-power quantum well epitaxial wafer structure of semiconductor laser |
| CN107093841A (en) * | 2017-06-30 | 2017-08-25 | 张永 | A kind of epitaxial structure of near-infrared VCSEL lasers and preparation method thereof |
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| CN110854678A (en) * | 2018-08-20 | 2020-02-28 | 山东华光光电子股份有限公司 | Preparation method of GaAs-based high-power laser |
| CN109346585A (en) * | 2018-09-03 | 2019-02-15 | 淮安澳洋顺昌光电技术有限公司 | A kind of epitaxial wafer and growing method reducing gallium nitride based light emitting diode operating voltage |
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