CN206864867U - A kind of epitaxial structure of near-infrared VCSEL lasers - Google Patents
A kind of epitaxial structure of near-infrared VCSEL lasers Download PDFInfo
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Abstract
The utility model provides a kind of epitaxial structure of near-infrared VCSEL lasers, including GaAs substrates, GaAs cushions, the DBR of n-type doping, active layer, oxidation limiting layer, the DBR and ohmic contact layer of p-type doping are sequentially depositing on gaas substrates, the active layer includes limiting layer successively from bottom to top, ducting layer, SQW, symmetrical ducting layer and symmetrical limiting layer, the SQW is made up of multigroup quantum well layer, thick barrier layer is provided between two adjacent groups quantum well layer, the thickness of the thick barrier layer is more than 50nm.The epitaxial structure of near-infrared VCSEL lasers reduces the leakage loss of carrier by inserting multi-layer thick barrier layer in active area SQW, improve the recombination probability of active area carrier, improve the differential gain of active area, so as to improve the radiant power of VCSEL lasers, the restriction factor of active area photon is added simultaneously, improves the speed of response of VCSEL lasers.
Description
Technical field
The utility model is related to a kind of near-infrared VCSEL lasers, more particularly to a kind of near-infrared VCSEL lasers it is outer
Prolong structure and preparation method thereof.
Background technology
Vcsel (VCSEL) passes through Bragg reflector（DBR）Resonator is formed, light is from vertical
It is emitted in semiconductor substrate surface direction.Compared to edge-emission semiconductor laser, VCSEL is not present optics cavity surface damage, had
Low threshold current, dynamic single mode work, far-field divergence angle are small, subcircular hot spot and light direction perpendicular to substrate surface spy
Property, it is high with optical coupling efficiency, be easily integrated two-dimensional array, thus VCSEL optical interconnection, optical communication, optical signal prosessing and
Had a wide range of applications in WDM fiber communication, neutral net, computer chip.Based on VCSEL, 3D recognitions of face, gesture are known
Not, our many known applications of iris recognition, unmanned laser radar etc. can be accomplished.Answered corresponding to above-mentioned
VCSEL requires such feature, such as high active layer gain, high radiant power, high reliability and controlled polarization.
For example, IEEE PHOTONICSTECHNOLOGY LETTERS, 1999, Vol.11, No.12, pp.1539-1541 (" non-patents
Document ") a kind of VCSEL using AlGaAs materials is disclosed, its radiant power reaches more than 3mW.
Usually, VCSEL consists of the following components：Substrate, N-DBR, active area, oxidation limiting layer, P-DBR, ohm
Contact layer.N-DBR constitutes the optical resonator of VCSEL lasers with P-DBR minute surfaces, and active area is carrier gain media,
The continuous-wave lasing of VCSEL lasers is realized by electric pump.In order to improve lasing power, it is necessary to improve DBR reflectivity, reduce
The loss of photon；In addition, it is necessary to reduce current loss, the common practice is to be injected outside luminous zone using hydrogen ion（inplant
Technique）, make the region carrier-free that is not acted to laser lasing compound.
The epitaxial structure of existing near-infrared VCSEL lasers as shown in Figure 1, 2, including including GaAs substrates 01, in GaAs
GaAs cushions 02, the DBR 03 of n-type doping, active layer 04, oxidation limiting layer 05, p-type doping are sequentially depositing on substrate 01
DBR 06 and ohmic contact layer 07.As shown in Fig. 2 wherein active layer 04 is right by limiting layer 10, ducting layer 11 and SQW 12
Claim ducting layer 13, symmetrical limiting layer 14 forms.Wherein, SQW is made up of 6 groups of quantum base/traps（In diagram, inclined upward to the right
Be barrier layer, inclined upward is well layer to the left）, wherein In0.12Ga0.88As well layer thickness is 4nm, Al0.10Ga0.90As builds
Thickness degree is 6nm.
It is that VCSEL luminous powers are smaller using the defects of this technique, it is difficult to meet answering for most of near infrared sensor
Use demand.The reason for causing drawbacks described above is that the above method is that active area carrier gain is not big enough, it may be possible to active area materials
Growth quality is caused, it is also possible to which active area MQW structure designs are unreasonable to be caused.
Utility model content
In view of the above the shortcomings that prior art, the purpose of this utility model, which is to provide, a kind of can reduce carrier
Leakage, increase the epitaxial structure of the near-infrared VCSEL lasers of the gain of active area carrier.
In order to achieve the above objects and other related objects, the utility model provides a kind of the outer of near-infrared VCSEL lasers
Prolong structure, including GaAs substrates, be sequentially depositing GaAs cushions, the DBR of n-type doping, active layer, oxygen on gaas substrates
Change limiting layer, the DBR and ohmic contact layer of p-type doping, the active layer includes limiting layer, ducting layer, amount successively from bottom to top
Sub- trap, symmetrical ducting layer and symmetrical limiting layer, the SQW are made up of multigroup quantum well layer, between two adjacent groups quantum well layer
Provided with thick barrier layer, the thickness of the thick barrier layer is more than 50nm.
Preferably, the thickness of the thick barrier layer is 50-100nm.
Preferably, 1-5 thickness barrier layer is inserted with the SQW.
Preferably, the trap thickness of quantum well layer is 3nm, barrier thickness 6nm in the SQW.
Preferably, the SQW includes the first quantum well layer, the first thick barrier layer, the second quantum well layer, the second thick barrier layer
And the 3rd quantum well layer, first quantum well layer include two groups of 3nmIn0.12Ga0.88The Al of As traps, 6nm0.10Ga0.90As builds,
The first thick barrier layer includes 100nm Al0.10Ga0.90As builds, and second quantum well layer includes 3nmIn0.12Ga0.88As
The Al of trap, 6nm0.10Ga0.90As builds, 3nmIn0.12Ga0.88As traps, the second thick barrier layer include 100nm Al0.10Ga0.90As
Build, the 3rd quantum well layer includes two groups of 3nmIn0.12Ga0.88The Al of As traps, 6nm0.10Ga0.90As builds.
Preferably, the SQW includes the first quantum well layer, the first thick barrier layer, the second quantum well layer, the second thick barrier layer
And the 3rd quantum well layer, first quantum well layer include 3nmIn0.12Ga0.88The Al of As traps, 6nm0.10Ga0.90As bases,
3nmIn0.12Ga0.88As traps, the first thick barrier layer（1220）Al including 100nm0.10Ga0.90As builds, second quantum
Well layer（1230）Including 3nmIn0.12Ga0.88The Al of As traps, 6nm0.10Ga0.90As builds, 3nmIn0.12Ga0.88As traps, 6nm
Al0.10Ga0.90As builds, 3nmIn0.12Ga0.88As traps, the second thick barrier layer（1240）Al including 100nm0.10Ga0.90As
Build, the 3rd quantum well layer（1250）Including including 3nmIn0.12Ga0.88The Al of As traps, 6nm0.10Ga0.90As bases,
3nmIn0.12Ga0.88As traps.
Preferably, GaAs substrates need the deviation angle with 7-15 degree.
As described above, the epitaxial structure of near-infrared VCSEL lasers of the present utility model has the advantages that：This is near
The epitaxial structure of infrared VCSEL lasers reduces the leakage of carrier by inserting multi-layer thick barrier layer in active area SQW
Loss, the recombination probability of active area carrier is improved, the differential gain of active area is improved, so as to improve the spoke of VCSEL lasers
Power is penetrated, while adds the restriction factor of active area photon, improves the speed of response of VCSEL lasers.
Brief description of the drawings
Fig. 1 is typical VCSEL epitaxial structures schematic diagram.
Fig. 2 is the epitaxial structure schematic diagram of conventional art VCSEL active areas.
Fig. 3 is the epitaxial structure schematic diagram of VCSEL active areas in the utility model first embodiment.
Fig. 4 is the epitaxial structure schematic diagram of VCSEL active areas in the utility model second embodiment.
Embodiment
Embodiment of the present utility model is illustrated by particular specific embodiment below, those skilled in the art can be by this
Content disclosed by specification understands other advantages and effect of the present utility model easily.
Fig. 1 is referred to Fig. 4.It should be clear that structure, ratio, size depicted in this specification institute accompanying drawings etc., only to
Coordinate the content disclosed in specification, so that those skilled in the art understands and reads, be not limited to the utility model
Enforceable qualifications, therefore do not have technical essential meaning, the modification of any structure, the change of proportionate relationship or size
Adjustment, in the case where not influenceing the effect of the utility model can be generated and the purpose that can reach, all should still fall in the utility model
Disclosed technology contents are obtained in the range of covering.Meanwhile in this specification it is cited as " on ", " under ", " left side ",
The term on " right side ", " centre " and " one " etc., understanding for narration is merely convenient to, and it is enforceable to be not used to restriction the utility model
Scope, its relativeness are altered or modified, enforceable when being also considered as the utility model in the case where changing technology contents without essence
Category.
As shown in figure 1, the utility model provides a kind of epitaxial structure of near-infrared VCSEL lasers, including GaAs substrates
01, GaAs cushions 02, the DBR 03 of n-type doping, active layer 04, oxidation limiting layer are sequentially depositing on GaAs substrates 01
05th, the DBR 06 and ohmic contact layer 07 of p-type doping.Wherein active layer 04 is right by limiting layer 10, ducting layer 11 and SQW 12
Claim ducting layer 13, symmetrical limiting layer 14 forms.SQW 12 is made up of multigroup quantum well layer, is set between two adjacent groups quantum well layer
There is thick barrier layer, the thickness of thick barrier layer is more than 50nm.As a kind of preferred embodiment, the thickness of thick barrier layer is 50-100nm, quantum
1-5 thickness barrier layer, preferably 1-3 layers are inserted with trap 12.The trap thickness of every layer of quantum well layer is 3nm, barrier thickness 6nm.
The preparation method of the epitaxial structure of near-infrared VCSEL lasers comprises the following steps：Growth substrates are put into
Being grown in the MOCVD systems of Aixtron companies, chamber pressure 50mbar, growth temperature is 720 DEG C, using H2 as carrier gas,
Trimethyl indium（TMIn）, trimethyl gallium（TMGa）, trimethyl aluminium（TMAl）, diethyl zinc（DeZn）, silane（SiH4）, arsine
（AsH3）And phosphine（PH3）For reaction source gas, the GaAs cushions that Si is adulterated, the Al of Si doping are grown successively0.12Ga0.82As/
Al0.82Ga0.12As DBR, In0.12Ga0.88As/Al0.1Ga0.9The MQW active layers that As is formed, the Al of Zn doping0.98Ga0.02As oxygen
Change limiting layer, the Al of Zn doping0.12Ga0.82As/Al0.82Ga0.12The GaAs ohmic contact layers of As DBR, Zn doping, wherein active
Layer includes limiting layer successively from bottom to top, and ducting layer, SQW, symmetrical ducting layer and symmetrical limiting layer, the SQW is by more
Group quantum well layer is formed, and thick barrier layer is provided between two adjacent groups quantum well layer.
With reference to specific embodiment, the structure and preparation method of this patent are described further.
As shown in figure 3, a specific embodiment as this patent, using electrical conductivity as 2-8x1018cm-2N-type GaAs make
For growth substrates, in order to improve the growth quality of material, GaAs substrates need the deviation angle with 7-15 degree.15 degree of substrates are put
Enter into the MOCVD systems of Aixtron companies and grow, chamber pressure 50mbar, growth temperature is 720 DEG C, using H2 as load
Gas, trimethyl indium（TMIn）, trimethyl gallium（TMGa）, trimethyl aluminium（TMAl）, diethyl zinc（DeZn）, silane（SiH4）, arsenic
Alkane（AsH3）And phosphine（PH3）Deng for reaction source gas, the GaAs cushions of Si doping are grown successively, Si doping
Al0.12Ga0.82As/Al0.82Ga0.12As DBR（Logarithm is 42 groups）；In0.12Ga0.88As/Al0.1Ga0.9The MQW that As is formed is active
Layer, the Al of Zn doping0.98Ga0.02As oxidation limiting layers, the Al of Zn doping0.12Ga0.82As/Al0.82Ga0.12As DBR（Logarithm is
28 groups）, the GaAs ohmic contact layers of Zn doping.Active area with lower epi layer by being formed：
10th layer：60nm Al0.90Ga0.10As limiting layers；
11th layer：50nm Al0.60Ga0.40As to Al0.10Ga0.90The ducting layer of As content gradually variationals；
12nd layer：Multigroup group by In0.12Ga0.88As traps and Al0.10Ga0.90As builds the SQW of composition；
In the utility model structure, SQW 12 include grow successively the first quantum well layer 121, the first thick barrier layer 122,
Second quantum well layer 123, the second thick quantum well layer 125 of barrier layer 124 and the 3rd, the first quantum well layer 121 include two groups
3nmIn0.12Ga0.88The Al of As traps, 6nm0.10Ga0.90As builds, and the first thick barrier layer 122 includes 100nm Al0.10Ga0.90As builds,
Second quantum well layer 123 includes 3nmIn0.12Ga0.88The Al of As traps, 6nm0.10Ga0.90As builds, 3nmIn0.12Ga0.88As traps, the
Two thick barrier layer 124 include 100nm Al0.10Ga0.90As builds, and the 3rd quantum well layer 125 includes two groups of 3nmIn0.12Ga0.88As
The Al of trap, 6nm0.10Ga0.90As builds.
13rd layer：50nmAl0.10Ga0.90As to Al0.60Ga0.40The ducting layer of As content gradually variationals；
14th layer：60nm Al0.90Ga0.10As limiting layers
After the completion of outer layer growth, using known photoetching and etching technics, VCSEL mesa structures are formed, using oxygen
Chemical industry skill aoxidizes oxidation limiting layer, forms 10-14nm oxide-aperture, and front electrode then is deposited on surface C ap layers, and
By GaAs substrate thinnings, backplate is deposited in thinned GaAs substrate backs, that is, completes the making of VCSEL lasers.
Embodiment two,
As shown in figure 4, the difference of structure and embodiment one is the structure design of active area 12, this implementation in the embodiment
Example active area with lower epi layer by being formed：
10th layer：45nm Al0.90Ga0.10As limiting layers；
11th layer：30nm Al0.60Ga0.40As to Al0.10Ga0.90The ducting layer of As content gradually variationals；
12nd layer：Multigroup group by In0.12Ga0.88As traps and Al0.10Ga0.90As builds the SQW of composition；
In the utility model structure, SQW 12 includes the first quantum well layer 1210, the first thick barrier layer 1220, the second quantum
Well layer 1230, the second thick quantum well layer 1250 of barrier layer 1240 and the 3rd, first quantum well layer 1210 include
3nmIn0.12Ga0.88The Al of As traps, 6nm0.10Ga0.90As builds, 3nmIn0.12Ga0.88As traps, the first thick barrier layer 1220 include
100nm Al0.10Ga0.90As builds, and the second quantum well layer 1230 includes 3nmIn0.12Ga0.88The Al of As traps, 6nm0.10Ga0.90As
Build, 3nmIn0.12Ga0.88The Al of As traps, 6nm0.10Ga0.90As builds, 3nmIn0.12Ga0.88As traps, the second thick barrier layer 1240 include
100nm Al0.10Ga0.90As builds, and the 3rd quantum well layer 1250 includes 3nmIn0.12Ga0.88As traps, 6nm
Al0.10Ga0.90As builds, 3nmIn0.12Ga0.88As traps.
13rd layer：50nmAl0.10Ga0.90As to Al0.60Ga0.40The ducting layer of As content gradually variationals；
14th layer：60nm Al0.90Ga0.10As limiting layers.
The epitaxial structure of near-infrared VCSEL lasers is reduced by inserting multi-layer thick barrier layer in active area SQW
The leakage loss of carrier, the recombination probability of active area carrier is improved, the differential gain of active area is improved, so as to improve
The radiant power of VCSEL lasers, while the restriction factor of active area photon is added, improve the response of VCSEL lasers
Speed.So the utility model effectively overcomes various shortcoming of the prior art and has high industrial utilization.
Above-described embodiment only illustrative principle of the present utility model and its effect are new not for this practicality is limited
Type.Any person skilled in the art can all be carried out without prejudice under spirit and scope of the present utility model to above-described embodiment
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the essence disclosed in the utility model
God and all equivalent modifications completed under technological thought or change, should be covered by claim of the present utility model.
Claims (7)
1. a kind of epitaxial structure of near-infrared VCSEL lasers, including GaAs substrates（01）, in GaAs substrates（01）On sink successively
Product has GaAs cushions（02）, n-type doping DBR（ 03）, active layer（04）, oxidation limiting layer（05）, p-type doping DBR
（ 06）And ohmic contact layer（07）, the active layer（04）Include limiting layer successively from bottom to top（10）, ducting layer（11）, amount
Sub- trap（12）, symmetrical ducting layer（13）With symmetrical limiting layer（14）, the SQW（12）It is made up of multigroup quantum well layer, it is special
Sign is：Thick barrier layer is provided between two adjacent groups quantum well layer, the thickness of the thick barrier layer is more than 50nm.
2. the epitaxial structure of near-infrared VCSEL lasers according to claim 1, it is characterised in that：The thick barrier layer
Thickness is 50-100nm.
3. the epitaxial structure of near-infrared VCSEL lasers according to claim 1, it is characterised in that：The SQW
（12）Inside it is inserted with 1-5 thickness barrier layer.
4. the epitaxial structure of near-infrared VCSEL lasers according to claim 1, it is characterised in that：The SQW
（12）The trap thickness of middle quantum well layer is 3nm, barrier thickness 6nm.
5. the epitaxial structure of near-infrared VCSEL lasers according to claim 4, it is characterised in that：The SQW
（12）Including the first quantum well layer（121）, the first thick barrier layer（122）, the second quantum well layer（123）, the second thick barrier layer（124）And
3rd quantum well layer（125）, first quantum well layer（121）Including two groups of 3nmIn0.12Ga0.88As traps, 6nm
Al0.10Ga0.90As builds, the first thick barrier layer（122）Al including 100nm0.10Ga0.90As builds, second quantum well layer
（123）Including 3nmIn0.12Ga0.88The Al of As traps, 6nm0.10Ga0.90As builds, 3nmIn0.12Ga0.88As traps, the described second thick base
Layer（124）Al including 100nm0.10Ga0.90As builds, the 3rd quantum well layer（125）Including two groups of 3nmIn0.12Ga0.88As
The Al of trap, 6nm0.10Ga0.90As builds.
6. the epitaxial structure of near-infrared VCSEL lasers according to claim 4, it is characterised in that：The SQW
（12）Including the first quantum well layer（1210）, the first thick barrier layer（1220）, the second quantum well layer（1230）, the second thick barrier layer
（1240）And the 3rd quantum well layer（1250）, first quantum well layer（1210）Including 3nmIn0.12Ga0.88As traps, 6nm
Al0.10Ga0.90As builds, 3nmIn0.12Ga0.88As traps, the first thick barrier layer（1220）Al including 100nm0.10Ga0.90As
Build, second quantum well layer（1230）Including 3nmIn0.12Ga0.88The Al of As traps, 6nm0.10Ga0.90As bases,
3nmIn0.12Ga0.88The Al of As traps, 6nm0.10Ga0.90As builds, 3nmIn0.12Ga0.88As traps, the second thick barrier layer（1240）Bag
Include 100nm Al0.10Ga0.90As builds, the 3rd quantum well layer（1250）Including including 3nmIn0.12Ga0.88As traps, 6nm
Al0.10Ga0.90As builds, 3nmIn0.12Ga0.88As traps.
7. the epitaxial structure of near-infrared VCSEL lasers according to claim 1, it is characterised in that：GaAs substrates need
The deviation angle with 7-15 degree.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109038217A (en) * | 2018-10-31 | 2018-12-18 | 厦门乾照半导体科技有限公司 | The VCSEL chip and production method and electronic device to prolong the service life |
| CN112563884A (en) * | 2020-12-08 | 2021-03-26 | 中国科学院微电子研究所 | Vertical cavity surface emitting laser and manufacturing method thereof |
| CN112563376A (en) * | 2020-12-11 | 2021-03-26 | 西安立芯光电科技有限公司 | Diode epitaxial structure |
-
2017
- 2017-06-30 CN CN201720776833.6U patent/CN206864867U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109038217A (en) * | 2018-10-31 | 2018-12-18 | 厦门乾照半导体科技有限公司 | The VCSEL chip and production method and electronic device to prolong the service life |
| CN109038217B (en) * | 2018-10-31 | 2024-04-26 | 厦门乾照半导体科技有限公司 | VCSEL chip with prolonged service life, manufacturing method and electronic device |
| CN112563884A (en) * | 2020-12-08 | 2021-03-26 | 中国科学院微电子研究所 | Vertical cavity surface emitting laser and manufacturing method thereof |
| CN112563376A (en) * | 2020-12-11 | 2021-03-26 | 西安立芯光电科技有限公司 | Diode epitaxial structure |
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