CN207459396U - A kind of epitaxial structure for VCSEL array laser - Google Patents
A kind of epitaxial structure for VCSEL array laser Download PDFInfo
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Abstract
The utility model provides a kind of epitaxial structure for VCSEL array laser, including GaAs substrates, GaAs buffer layers, N-type DBR layer, active layer, oxidation limiting layer, p-type DBR layer and ohmic contact layer have been sequentially depositing on gaas substrates, the N-type DBR layer is made of AlGaAs/GaAs systems DBR layer with (Al) GaAs/ (Al) GaInP systems DBR layer two parts, and (Al) GaAs/ (Al) GaInP system's DBR layers are close to the active layer.The epitaxial structure of the VCSEL array laser adds (Al) GaAs/ (Al) GaInP systems DBR layer on N-type DBR layer, so when carrying out mesa etch, end after GaInP layers of (Al) is etched into, this ensures that single VCSEL laser mesa all in VCSEL array is highly consistent, so as to ensure that VCSEL array output characteristic of laser is consistent, volume production yield is high.
Description
Technical field
It is more particularly to a kind of to be used for VCSEL array laser the utility model is related to VCSEL array field of laser device technology
Epitaxial structure and this epitaxial structure preparation method.
Background technology
Vertical cavity emitting laser array（VCSEL laser arrays）By integrating hundreds of VCSEL on a chips
Laser and the light output for obtaining hundreds of milliwatts have the characteristics that small, power is big, light beam is concentrated, and can pass through VCSEL's
Different arrangement modes obtain the VCSEL array of different lighting patterns, and device design freedom is big, thus in 3D identifications, industry
The fields such as illumination, night vision illumination, robot 3D visions, printing, laser therapy have a wide range of applications.In order to make VCSEL array
Light output reach preferable design effect and keep the uniformity of volume production, it is desirable that single VCSEL lasers in VCSEL array
Photoelectric characteristic be consistent, this proposes higher requirement to the epitaxial structures of VCSEL lasers with chip technology.
Usually, VCSEL epitaxial layers are several by substrate, N-DBR, active area, oxidation limiting layer, P-DBR, ohmic contact layer etc.
Part is formed, and N-DBR constitutes the optical resonator of VCSEL lasers with P-DBR minute surfaces, and active area is situated between for carrier gain
Matter, the continuous-wave lasing of VCSEL lasers is realized by electric pump, and the introducing of oxidation limiting layer ensures that current convergence is sent out in laser
Penetrate region, it is ensured that the low threshold current of VCSEL lasers.Chip technology includes mesa etch, oxidation, trench fill, anti-reflection
Film vapor deposition, front metal vapor deposition, substrate thinning and back metal vapor deposition etc..Consistent, the battle array for the light output performance of VCSEL array
The photoelectric characteristic requirement of single VCSEL lasers is consistent on row, for material epitaxy angle, it is ensured that active area MQW
Luminous efficiency it is consistent with gain, meanwhile, the reflectivity of DBR and reflection light center will be consistent as far as possible, it is desirable that be continuously improved
The uniformity of VCSEL laser epitaxials growth；For the angle of chip technology, it is ensured that table top size and mesa etch depth
Unanimously and oxidation limiting layer oxidation depth is consistent.
For the VCSEL lasers of traditional structure, researcher puts into industrial circle in VCSEL mesa etch techniques
Substantial amounts of energy：Xin Guofeng et al. is by adjusting the volume ratios of HF/CrO3 corrosive liquids, it is determined that AlxGa1-xAs content gradually variational materials
The etching condition of material；Liu Lin et al. determines GaAs materials and H2SO4/H2O2/H2O using the infrared thermal imagery of linear liquid film（5：
1：50）The reaction starting duration of corrosive liquid is about 0.2s.Yang Ruixia et al. have studied different volumes than citric acid/dioxygen it is water-soluble
Liquid carries out the component and corrosive liquid volume ratio of AlGaAs stop-layers the selective etch characteristic of GaAs/AlGaAs based materials
Optimization；With such as people et al. with 50% Citric Acid Mono solution and 30% hydrogen peroxide, volume ratio 3：1 couple of GaAs/AlAs's
Selective wet etching technique is studied, and obtains preferable VCSEL table tops.
But using the VCSEL lasers of traditional technology growth all using GaAs/AlGaAs material systems, mesa etch
When, since GaAs/AlGaAs material properties are consistent, mesa etch depth is hard to keep unanimously, the VCSEL array light extraction resulted in
Power uniformity is poor.
The reason for causing disadvantages mentioned above is：VCSEL laser epitaxial layers are all using GaAs/AlGaAs material systems, no
Pipe is wet etching or dry etching, due to that can not end etching in itself by epitaxial film materials, but when passing through etching
Between control the depth of etching, there is about 5% process deviation in technique, cause VCSEL land depths inconsistent.
Utility model content
In view of the foregoing deficiencies of prior art, can be effectively ensured the purpose of this utility model is to provide a kind of
The epitaxial structure of the consistent VCSEL array laser of VCSEL array performance.
In order to achieve the above objects and other related objects, the utility model provides a kind of for VCSEL array laser
Epitaxial structure including GaAs substrates, has been sequentially depositing GaAs buffer layers, N-type DBR layer, active layer, oxidation on gaas substrates
Limiting layer, p-type DBR layer and ohmic contact layer, the N-type DBR layer is by DBR layers of AlGaAs/GaAs systems and (Al) GaAs/ (Al)
GaInP systems DBR layer two parts composition, (Al) GaAs/ (Al) GaInP system's DBR layers are close to the active layer.
Preferably, include by low Al components Al for described AlGaAs/GaAs systems DBR layers0.15Ga0.85As is to high Al contents
Al0.90Ga0.10The first gradual transition layer, the Al of As transition0.90Ga0.10As low-index layers, by high Al contents Al0.90Ga0.10As
To low Al components Al0.15Ga0.85The second gradual transition layer, the Al of As transition0.15Ga0.85As high refractive index layers.
Preferably, described AlGaAs/GaAs systems DBR layers of logarithm is 21 groups, every group of AlGaAs/GaAs systems DBR thickness
It spends for 141nm, the thickness of the first gradual transition layer is 20nm, and the thickness of the low-index layer is 53.5nm, described the
The thickness of two gradual transition layers is 20nm, and the thickness of the high refractive index layer is 47.5nm.
Preferably, described AlGaAs/GaAs systems DBR layers of logarithm is 21 groups, every group of AlGaAs/GaAs systems DBR thickness
It spends for 127.5nm, the thickness of the first gradual transition layer is 20nm, and the thickness of the low-index layer is 46.3nm, described
The thickness of second gradual transition layer is 20nm, and the thickness of the high refractive index layer is 41.2nm.
As described above, the utility model for epitaxial structure of VCSEL array laser and preparation method thereof have with
Lower advantageous effect：The epitaxial structure of the VCSEL array laser adds (Al) GaAs/ (Al) GaInP systems on N-type DBR layer
DBR layer so when carrying out mesa etch, ends, this ensures that in VCSEL array after GaInP layers of (Al) is etched into
Single all VCSEL laser mesas is highly consistent, and so as to ensure that VCSEL array output characteristic of laser is consistent, volume production is good
Rate is high, and can be designed according to different VCSEL arrays, obtains different images outputtings.
Description of the drawings
Fig. 1 is the box connection diagram of the utility model embodiment.
Fig. 2 is the outline structural diagram of the utility model embodiment.
Specific embodiment
Illustrate the embodiment of the utility model by particular specific embodiment below, those skilled in the art can be by this
Content disclosed by specification understands other advantages and effect of the utility model easily.
Please refer to Fig.1,2.It should be clear that structure, ratio, size depicted in this specification institute accompanying drawings etc., only matching somebody with somebody
The revealed content of specification is closed, so that those skilled in the art understands and reads, being not limited to the utility model can
The qualifications of implementation, therefore do not have technical essential meaning, the tune of the modification of any structure, the change of proportionate relationship or size
It is whole, in the case where not influencing the effect of the utility model can be generated and the purpose that can reach, should all still fall in the utility model institute
The technology contents of announcement are obtained in the range of covering.Meanwhile in this specification it is cited as " on ", " under ", "left", "right",
The term of " centre " and " one " etc. is merely convenient to understanding rather than to limit the enforceable scope of the utility model for narration,
Its relativeness is altered or modified, in the case where changing technology contents without essence, when being also considered as the enforceable scope of the utility model.
As shown in Figure 1, 2, the utility model provides a kind of epitaxial structure for VCSEL array laser, including
GaAs substrates 00 have been sequentially depositing GaAs buffer layers 01, N-type DBR layer 02, active layer 03, oxidation limiting layer on gaas substrates
04th, p-type DBR layer 05 and ohmic contact layer 06.Wherein N-type DBR layer 02 is by AlGaAs/GaAs systems DBR layers 21 and (Al) GaAs/
(Al) 22 two parts of GaInP systems DBR layer form, and (Al) GaAs/ (Al) GaInP systems DBR layer 22 is close to active layer 03, AlGaAs/
GaAs systems DBR layers 21 are close to GaAs buffer layers 01.AlGaAs/GaAs systems DBR layers 21 are using AlGaAs/GaAs materials
System, (Al) GaAs/ (Al) GaInP systems DBR layer 22 is using (Al) GaAs/ (Al) GaInP material systems, (Al) GaAs/
(Al) GaInP material systems can be GaAs/GaInP material systems or AlGaAs/AlGaInP material systems.
Due to low Al components Al0.15Ga0.85The Al of As and high Al contents0.90Ga0.10Band jump is larger between As, causes electricity
The injection efficiency of excessive influence electric current is hindered, in order to reduce resistance, gradual transition layer can be inserted between DBR.Therefore AlGaAs/
GaAs systems DBR layers 21 may include by low Al components Al0.15Ga0.85As is to high Al contents Al0.90Ga0.10First gradual change of As transition
Transition zone, Al0.90Ga0.10As low-index layers, by high Al contents Al0.90Ga0.10As is to low Al components Al0.15Ga0.85As transition
The second gradual transition layer and Al0.15Ga0.85As high refractive index layers.First gradual transition layer, low-index layer, the second gradual change
Layer, high refractive index layer is crossed to accumulate successively from bottom to top.（Al）GaAs layers with GaInP layers of (Al) can according to the difference of Al components, with
And the difference of reflection peak center, there is different thickness
With traditional N-DBR Structure Comparisons, the utility model passes through (Al) GaInP materials and (Al) GaAs based material characteristics
Difference in mesa etch, can be ended in (Al) GaInP materials by the selective corrosion of wet method, also be carved by dry method
Erosion (Al) GaInP materials end, so as to ensure make VCSEL array when mesa etch depth it is consistent.
The preparation method of the VCSEL array laser specifically comprises the following steps：Using electrical conductivity as 2-8x1018cm-2N
Type GaAs is as growth substrates, and in order to improve the growth quality of material, GaAs substrates need the deviation angle with 7-15 degree.15
Degree substrate, which is put into the MOCVD systems of Aixtron companies, to be grown, and chamber pressure 50mbar, growth temperature is 720 DEG C,
With H2For carrier gas, trimethyl indium（TMIn）, trimethyl gallium（TMGa）, trimethyl aluminium（TMAl）, diethyl zinc（DeZn）, silane
（SiH4）, arsine（AsH3）And phosphine（PH3）Deng the GaAs buffer layers 01 for reaction source gas, successively growth Si doping, Si doping
AlGaAs/GaAs systems DBR layers 21（Logarithm is 21 groups）；(Al) GaAs/ (Al) GaInP systems DBR layer 22 (logarithm is 1 group),
The MQW active layers 03 that InGaAs/AlGaAs is formed, the Al of Zn doping0.98Ga0.02As oxidation limiting layers 04, Zn doping
Al0.15Ga0.85As/Al0.90Ga0.10The p-type DBR layer 05 of As（Logarithm is 17 groups）, the GaAs ohmic contact layers 06 of Zn doping.
In the present embodiment, 03 wavelength of active layer is set as 930nm, Quantum Well In0.18Ga0.82As has certain compressive strain,
Thickness is set as 3nm, and quantum builds Al0.1Ga0.9As thickness is set as 4nm.N-type DBR layer 02 is by DBR layers of AlGaAs/GaAs systems
21 and GaAs/Ga0.5In0.5P systems DBR layer 022 forms.As a kind of specific implementation method AlGaAs/GaAs systems DBR layers 21
Every group of thickness is 141 nm, due to low Al components Al0.15Ga0.85The Al of As and high Al contents0.90Ga0.10Band jump between As
It is larger, cause the excessive injection efficiency for influencing electric current of resistance, in order to reduce resistance, gradual transition layer is inserted between DBR.
The structure of AlGaAs/GaAs systems DBR layers 21 is：The first gradual transition layer of 20nm, the Al of 53.5nm0.90Ga0.10The low foldings of As
Penetrate rate layer, the second gradual transition layer of 20nm, the Al of 47.5nm0.15Ga0.85As high refractive index layers.GaAs/Ga0.5In0.5P systems
022 thickness of DBR layer is 134.4nm, and wherein GaAs layers of thickness is 64nm, Ga0.5In0.5P layer thickness is 70.4nm.N-type DBR
02 structure list of layer is as follows：
After the completion of outer layer growth, VCSEL array is made using the chip technologies such as photoetching, etching and vapor deposition processing procedure.It is special
Not, when etching VCSEL table tops, using warm therapy etching technics, first, formed on epitaxial wafer surface using PR955 photoresists
The figure of table top, glue thickness is 800nm, then with H2SO4/H2O2/H2O is etching liquid, ratio 5：1：1 performs etching, etching liquid
To containing As materials with apparent corrasion, etch rate is about 0.021um/s, but etching liquid will not be etched containing P's completely
Material, therefore, after etching into GaInP layers, solution will not continue downwards to etch.After the completion of mesa etch, made using oxidation technology
Oxidation limiting layer aoxidizes, and forms the light hole of 20-24nm diameters, is then deposited front electrode in ap layers of surface C, and by GaAs
Substrate thinning is deposited backplate in thinned GaAs substrate backs, that is, completes the making of VCSEL laser arrays.
After the completion of outer layer growth, VCSEL array is made using the chip technologies such as photoetching, etching and vapor deposition processing procedure.It is special
Not, when etching VCSEL table tops, using warm therapy etching technics, first, formed on epitaxial wafer surface using PR955 photoresists
The figure of table top, glue thickness is 800nm, then with H2SO4/H2O2/H2O is etching liquid, ratio 5：1：1 performs etching, etching liquid
To containing As materials with apparent corrasion, etch rate is about 0.021um/s, but etching liquid will not be etched containing P's completely
Material, therefore, after etching into GaInP layers, solution will not continue downwards to etch.After the completion of mesa etch, made using oxidation technology
Oxidation limiting layer aoxidizes, and forms the light hole of 20-24nm diameters, is then deposited front electrode in ap layers of surface C, and by GaAs
Substrate thinning is deposited backplate in thinned GaAs substrate backs, that is, completes the making of VCSEL laser arrays.
This patent also discloses another embodiment, and basic structure is similar with growing method with previous embodiment, unlike：
In the present embodiment, 03 wavelength of active layer is set as 835 nm, Quantum Well In0.008Ga0.992As has certain compressive strain, thick
Degree is set as 7nm, and quantum builds Al0.3Ga0.7As thickness is set as 9nm.N-type DBR layer 02 is by AlGaAs/GaAs systems DBR layers 21
And GaAs/Ga0.5In0.5P systems DBR layer 022 forms.The thickness of 21 every groups of AlGaAs/GaAs systems DBR layers is 127.5nm,
The structure of AlGaAs/GaAs systems DBR layers 21 is：The first gradual transition layer of 20nm, the Al of 46.3nm0.90Ga0.10The low foldings of As
Penetrate rate layer, the second gradual transition layer of 20nm, the Al of 41.2m0.15Ga0.85As high refractive index layers.GaAs/Ga0.5In0.5P systems
022 thickness of DBR layer is 124.7nm, and wherein GaAs layers of thickness is 60.1nm, Ga0.5In0.5P layer thickness is 64.6nm.N-type
02 structure list of DBR layer is as follows：
After the completion of outer layer growth, VCSEL array is made using the chip technologies such as photoetching, etching and vapor deposition processing procedure.It is special
Not, when etching VCSEL table tops, using RIE dry etch process, first, AZ5214 photoresists are used on epitaxial wafer surface
The figure of table top is formed, using the SiO2 protective layers of PECVD growth about 150nm thickness, then, using the RIE with terminal detecting
Equipment（Model Sentech SI591）, using Cl2/H2/ Ar etches table top for etching gas, when comprehensive point probe detects P
In the presence of element, etching stopping.Since dry etching can cause the rough surface of etching, this experiment adds the H of 30s2SO4/
H2O2/H2On the one hand the processing of O solution wet imbibition can effectively reduce the burr of etched surface, on the other hand, can be further clear
Except Al0.15Ga0.35In0.5Material containing As remaining more than P.After the completion of mesa etch, SiO is removed2Protective layer, then using oxidation
Technique aoxidizes oxidation limiting layer, forms the light hole of 20-24nm diameters, and front electrode then is deposited in ap layers of surface C, and
By GaAs substrate thinnings, backplate is deposited in thinned GaAs substrate backs, that is, completes the making of VCSEL laser arrays.
The epitaxial structure of the VCSEL array laser adds (Al) GaAs/ (Al) GaInP system DBR on N-type DBR layer
Layer so when carrying out mesa etch, ends after GaInP layers of (Al) is etched into, this ensures that all in VCSEL array
Single VCSEL laser mesa it is highly consistent, so as to ensure that VCSEL array output characteristic of laser is consistent, volume production yield is high,
And can be designed according to different VCSEL arrays, obtain different images outputtings.So the utility model effectively overcomes now
There is the various shortcoming in technology and have high industrial utilization.
The above embodiments are only illustrative of the principle and efficacy of the utility model, new not for this practicality is limited
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
God and all equivalent modifications completed under technological thought or change, should be covered by the claim of the utility model.
Claims (4)
1. a kind of epitaxial structure for VCSEL array laser, including GaAs substrates（00）, in GaAs substrates（00) on successively
Deposition has GaAs buffer layers（01）, N-type DBR layer（02）, active layer（03）, oxidation limiting layer（04）, p-type DBR layer（05）And Europe
Nurse contact layer（06）, it is characterised in that：The N-type DBR layer（02）By DBR layers of AlGaAs/GaAs systems（21）With AlGaAs/
AlGaInP systems DBR layer（ 22）Two parts form, AlGaAs/AlGaInP systems DBR layer（ 22）Close to the active layer
（03）.
2. the epitaxial structure according to claim 1 for VCSEL array laser, it is characterised in that：The AlGaAs/
DBR layers of GaAs systems（21）Including by low Al components Al0.15Ga0.85As is to high Al contents Al0.90Ga0.10First gradual change of As transition
Transition zone, Al0.90Ga0.10As low-index layers, by high Al contents Al0.90Ga0.10As is to low Al components Al0.15Ga0.85As transition
The second gradual transition layer, Al0.15Ga0.85As high refractive index layers.
3. the epitaxial structure according to claim 2 for VCSEL array laser, it is characterised in that：The AlGaAs/
DBR layers of GaAs systems（21）Logarithm for 21 groups, every group of DBR layers of AlGaAs/GaAs system（21）Thickness is 141nm, described first
The thickness of gradual transition layer is 20nm, and the thickness of the low-index layer is 53.5nm, the thickness of the second gradual transition layer
For 20nm, the thickness of the high refractive index layer is 47.5nm.
4. the epitaxial structure according to claim 2 for VCSEL array laser, it is characterised in that：The AlGaAs/
DBR layers of GaAs systems（21）Logarithm for 21 groups, every group of DBR layers of AlGaAs/GaAs system（21）Thickness is 127.5nm, described
The thickness of one gradual transition layer is 20nm, and the thickness of the low-index layer is 46.3nm, the thickness of the second gradual transition layer
It spends for 20nm, the thickness of the high refractive index layer is 41.2nm.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107437723A (en) * | 2017-09-21 | 2017-12-05 | 苏州全磊光电有限公司 | A kind of epitaxial structure for VCSEL array laser and preparation method thereof |
| CN109616871A (en) * | 2018-12-04 | 2019-04-12 | 扬州乾照光电有限公司 | A kind of VCSEL chip and preparation method thereof |
| CN109713566A (en) * | 2019-03-01 | 2019-05-03 | 厦门乾照半导体科技有限公司 | A kind of VCSEL array structure and preparation method thereof |
| CN114268020A (en) * | 2021-11-16 | 2022-04-01 | 深圳市德明利光电有限公司 | Al with high refractive index contrast2O3 AlxGa1-xManufacturing method of As DBR VCSEL |
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2017
- 2017-09-21 CN CN201721212412.7U patent/CN207459396U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107437723A (en) * | 2017-09-21 | 2017-12-05 | 苏州全磊光电有限公司 | A kind of epitaxial structure for VCSEL array laser and preparation method thereof |
| CN109616871A (en) * | 2018-12-04 | 2019-04-12 | 扬州乾照光电有限公司 | A kind of VCSEL chip and preparation method thereof |
| CN109616871B (en) * | 2018-12-04 | 2020-06-26 | 扬州乾照光电有限公司 | VCSEL chip and manufacturing method thereof |
| CN109713566A (en) * | 2019-03-01 | 2019-05-03 | 厦门乾照半导体科技有限公司 | A kind of VCSEL array structure and preparation method thereof |
| CN114268020A (en) * | 2021-11-16 | 2022-04-01 | 深圳市德明利光电有限公司 | Al with high refractive index contrast2O3 AlxGa1-xManufacturing method of As DBR VCSEL |
| CN114268020B (en) * | 2021-11-16 | 2023-11-28 | 深圳市嘉敏利光电有限公司 | Al with high refractive index contrast 2 O 3 Al x Ga 1-x As DBR VCSEL manufacturing method |
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