CN114268020B - Al with high refractive index contrast 2 O 3 Al x Ga 1-x As DBR VCSEL manufacturing method - Google Patents
Al with high refractive index contrast 2 O 3 Al x Ga 1-x As DBR VCSEL manufacturing method Download PDFInfo
- Publication number
- CN114268020B CN114268020B CN202111356428.6A CN202111356428A CN114268020B CN 114268020 B CN114268020 B CN 114268020B CN 202111356428 A CN202111356428 A CN 202111356428A CN 114268020 B CN114268020 B CN 114268020B
- Authority
- CN
- China
- Prior art keywords
- dbr
- refractive index
- manufacturing
- high refractive
- index contrast
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 23
- 230000002093 peripheral effect Effects 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 13
- 230000003647 oxidation Effects 0.000 claims abstract description 13
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 13
- 230000008020 evaporation Effects 0.000 claims abstract description 12
- 238000001704 evaporation Methods 0.000 claims abstract description 12
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 9
- 238000009713 electroplating Methods 0.000 claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims abstract description 9
- 238000003486 chemical etching Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 13
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Abstract
The invention relates to a high refractive index contrast Al 2 O 3 Al x Ga 1‑x The manufacturing method of the As DBR VCSEL comprises the following steps: major DBR Al over MQW layer x Ga 1‑x As/Al y Ga 1‑y As(x>y，0≤y<1) Medium and high Al% component Al x Ga 1‑x The part of As is completely oxidized to be converted into Al 2 O 3 Forming Al on a desired optical path 2 O 3 /Al y Ga 1‑y As DBR stack structure and by controlling the low Al% component Al nearer to MQW z Ga 1‑z Al whose oxidation rate controlling center of As is not oxidized z Ga 1‑z The size of the As current aperture; then, the peripheral portion is completely oxidized to form Al 2 O 3 Removing by chemical etching to retain Al of optical path 2 O 3 /Al y Ga 1‑y An As DBR stack structure; removing Al of peripheral portion 2 O 3 The space is filled with ohmic metal by one or more of atomic layer deposition, sputtering, evaporation and electroplating to form a low-resistance electrical conduction path.
Description
Technical Field
The invention relates to the technical field of VCSEL, in particular to an Al with high refractive index contrast 2 O 3 Al x Ga 1-x An As DBR VCSEL manufacturing method.
Background
The existing resonant cavity reflector is made of Al x Ga 1-x As/Al y Ga 1-y As is epitaxially stacked. Due to the small refractive index difference, a relatively large amount of Al is required x Ga 1-x As/Al y Ga 1-y As stacks to achieve a reflectivity of approximately 99%. AlGaAs is a semiconductor material which is difficult to dope, compared with metal, the resistance of the AlGaAs is higher, and the optical resonant cavity and the electrical channel are overlapped and can be influenced by piezoelectric effect.
Disclosure of Invention
In view of the above, it is necessary to propose a high refractive index contrast Al 2 O 3 Al x Ga 1-x An As DBR VCSEL manufacturing method.
In order to solve the technical problems, the invention adopts the following technical scheme: al with high refractive index contrast 2 O 3 Al x Ga 1-x The manufacturing method of the As DBR VCSEL comprises the following steps: major DBR Al over MQW layer x Ga 1-x As/Al y Ga 1-y As(x>y，0≤y<1) Medium and high Al% component Al x Ga 1-x The part of As (when x is 0.98, n is 3.01) is completely oxidized to be converted into Al 2 O 3 (n-1.67), al is formed on a desired optical path 2 O 3 /Al y Ga 1-y As DBR stack structure with at least one layer of low Al% component Al nearest to MQW in the structure z Ga 1-z As forms a current aperture and the size of the current aperture is controlled by controlling the oxidation rate thereof, wherein the Al% component satisfies x>Max (y, z); completely oxidizing the peripheral portion to form Al 2 O 3 Removing by chemical etching to retain Al of optical path 2 O 3 /Al y Ga 1-y An As DBR stack structure; removing Al of peripheral portion 2 O 3 The space is filled with ohmic metal by one or more of atomic layer deposition, sputtering, evaporation and electroplating to form a low-resistance electrical conduction path.
Further, the method also comprises the steps of previous epitaxial growth, platform etching and upper electrode manufacturing.
Further, the method also comprises the step of removing the Al at the peripheral part 2 O 3 The MQW is protected to be close to Al by negative photoresistance before 2 O 3 。
Further, al at the peripheral portion 2 O 3 An etching process is used.
Further, the method also comprises the following steps of secondary mesa etching, lower electrode manufacturing, dielectric layer coating and welding pad evaporation.
The invention has the beneficial effects that: converting the portion of the AlGaAs of the high Al% component of the DBR over the MQW layer to Al 2 O 3 With one or more layers of Al nearest to the MQW in the structure z Ga 1-z As(x>y and x>z) forming a current aperture in the unoxidized central part after the oxidation process, controlling the current aperture size by controlling the oxidation rate, so that the current aperture size can be conveniently adjusted and changed, and filling ohmic metal in one or more combination modes of atomic layer deposition, sputtering, evaporation and electroplating to form a low-resistance electric conduction path, thereby forming a high-heat-conduction, low-resistance and high-power conversion efficiency conduction path by AlGaAs/ohmic metal, and reducing Al in the epitaxial stage x Ga 1-x As/Al y Ga 1-y As(x>y，0≤y<1) DBR layer logarithm. The Al% size relationship in the structure is x>z, the mainstream z today>x>y, the highest aluminum component is changed as the current aperture limiting layer.
Drawings
FIG. 1 shows a high refractive index contrast Al according to an embodiment of the present invention 2 O 3 Al x Ga 1-x Al of As DBR VCSEL fabrication method y Ga 1-y Schematic flow chart of technological structure when y=0 in As;
FIG. 2 shows a high refractive index contrast Al according to an embodiment of the present invention 2 O 3 Al x Ga 1-x The flow chart of the As DBR VCSEL manufacturing method is shown.
Detailed Description
To make the objects, technical solutions and advantages of the present invention more apparent, the present invention relates to a high refractive index contrast Al 2 O 3 Al x Ga 1-x The As DBR VCSEL fabrication method is described in further detail. It should be understood that the detailed description hereinThe examples are only for explaining the present invention and are not intended to limit the present invention.
Referring to FIGS. 1-2, a high refractive index contrast Al 2 O 3 Al x Ga 1-x The manufacturing method of the As DBR VCSEL comprises the following steps: major DBR Al over MQW layer x Ga 1-x As/Al y Ga 1-y As(x>y，0≤y<1) Medium and high Al% component Al x Ga 1-x The part of As is completely oxidized to be converted into Al 2 O 3 Forming Al on a desired optical path 2 O 3 /Al y Ga 1- y As DBR stack structure with at least one layer of low Al% component Al nearest to MQW in the structure z Ga 1-z As forms a current aperture and the size of the current aperture is controlled by controlling the oxidation rate thereof, wherein the Al% component satisfies x>Max (y, z); completely oxidizing the peripheral portion to form Al 2 O 3 Removing by chemical etching to retain Al of optical path 2 O 3 /Al y Ga 1-y An As DBR stack structure; removing Al of peripheral portion 2 O 3 The space is filled with ohmic metal by one or more of atomic layer deposition, sputtering, evaporation and electroplating to form a low-resistance electrical conduction path.
Converting the high Al% component AlGaAs (n-3.01) portion of the DBR over the MQW layer to Al 2 O 3 As the lowest Al% component Al in the structure z Ga 1-z As forms a current aperture and controls the size of the current aperture by controlling the oxidation rate thereof, so that the size of the current aperture can be conveniently adjusted and changed, ohmic metal is filled in one or a plurality of combination modes of atomic layer deposition, sputtering, evaporation and electroplating to form a low-resistance electric conduction path, thereby forming a conduction path with high heat conduction, low resistance and high power conversion efficiency by AlGaAs/ohmic metal, and reducing Al in an epitaxial stage x Ga 1-x As/Al y Ga 1-y As(x>y，0≤y<1) DBR layer logarithm. That is, the Al% size relationship in the structure is x>z, the mainstream z today>x>y is different, and the highest aluminum component is changed as currentThe pore size limiting layer is made.
In particular, high Al% component Al x Ga 1-x As (when x is 0.98, n is 3.01, n is refractive index), and Al 2 O 3 The refractive index of (2) approaches 1.67.
It will be appreciated that x > Max (y, z), i.e., x is greater than the maximum of y and z, i.e., x is greater than y and x is greater than z.
Referring to fig. 1 and 2, the method further includes the previous epitaxial growth, mesa etching/upper electrode fabrication.
Referring to FIGS. 1 and 2, the method further comprises removing Al at the peripheral portion 2 O 3 The MQW is protected to be close to Al by negative photoresistance before 2 O 3 。
Referring to FIGS. 1 and 2, al is present at the peripheral portion 2 O 3 A chemical etching process is employed. The wet etching or dry etching process can be selected according to the requirement.
Referring to fig. 1 and 2, the method further includes a subsequent secondary mesa etching, bottom electrode fabrication, dielectric layer coating, and pad evaporation.
Major DBR Al over MQW layer x Ga 1-x As/Al y Ga 1-y As(x>y，0≤y<1) Medium and high Al% component Al x Ga 1-x The part of As is completely oxidized to be converted into Al 2 O 3 Forming Al on a desired optical path 2 O 3 /Al y Ga 1- y As DBR stack structure and by controlling the low Al% component Al nearer to MQW z Ga 1-z The oxidation rate of As, in turn, controls the Al whose center is not oxidized z Ga 1-z As current pore size, wherein the Al% component satisfies x>y and x>z; completely oxidizing the peripheral portion to form Al 2 O 3 Removing by chemical etching to retain Al of optical path 2 O 3 /Al y Ga 1-y An As DBR stack structure; removing Al of peripheral portion 2 O 3 The space is filled with ohmic metal by one or more of atomic layer deposition, sputtering, evaporation and electroplating to form a low-resistance electrical conduction path.
As can be appreciated, referring to fig. 1 and 2, the overall flow sequentially includes: epitaxially growing to form an epitaxial structure, wherein the epitaxial structure generally mainly comprises an upper DBR layer, an MQW, a lower DBR layer and a substrate; the upper electrode is formed on the primary etching table surface, and the electrode can be formed in a vapor deposition mode generally; oxidation to form HC-DBR (High thermal conductivity-distributed bragg reflectors, highly thermally conductive-distributed Bragg reflector), i.e., the main DBR Al over MQW layer x Ga 1-x As/Al y Ga 1- y As(x>y，0≤y<1) Medium and high Al% component Al x Ga 1-x The part of As (when x is 0.98, n is 3.01) is completely oxidized to be converted into Al 2 O 3 (n-1.67), al is formed on a desired optical path 2 O 3 /Al y Ga 1-y As DBR stack structure with one or more layers of Al nearest to MQW in the structure z Ga 1-z As(x>y and x>z) the central portion which has not been oxidized after the oxidation process forms a current aperture and the size of the current aperture is controlled by controlling the oxidation rate thereof, wherein the Al% component satisfies x>y and x>z; negative photoresist protects MQW from approaching Al 2 O 3 I.e. the upper surface of MQW is exposed out of the primary etching table surface 2 O 3 With the negative resist, the negative resist is typically formed by deposition; chemical etching to remove peripheral Al 2 O 3 I.e. Al formed by complete oxidation of peripheral portions 2 O 3 Removing by chemical etching to retain Al of optical path 2 O 3 /Al y Ga 1-y An As DBR stack structure; ohmic metal filling, namely filling ohmic metal by one or more combination modes of atomic layer deposition, sputtering, evaporation, electroplating and the like to form a low-resistance electric conduction path; etching the secondary mesa, namely immediately etching the lower DBR part below the MQW and above the substrate to form a secondary etched mesa; and manufacturing a lower electrode, namely forming the lower electrode on an electrode contact layer (a part between the lower DBR and the substrate) outside the secondary etching mesa.
Obviously, each ofFor Al 2 O 3 /Al y Ga 1-y The thickness of the As DBR stack layer satisfies the resonant cavity lambda/(2 n) eff ) Wherein lambda is the primary emission wavelength of the laser, n eff The equivalent refractive index at each pair of DBR stacks for that wavelength.
It can be understood that a VCSEL, vertical-Cavity Surface-Emitting Laser (VCSEL for short), translates a Vertical-Cavity Surface-Emitting Laser; MQW, multiple Quantum Well, multiple quantum wells; DBR Distributed Bragg Reflector, bragg mirror when distributed. AL, i.e. aluminium, it being understood that AL 2 O 3 That is, aluminum oxide generally refers to AlGaAs in a VCSEL structure oxidized to Al 2 O 3 Mainly contains a small amount of Ga 2 O 3 GaAs or AlAs. Ga is gallium, and As is arsenic.
It should be noted that, if directional indications (such as up, down, left, right, front, and rear … …) are included in the embodiments of the present invention, the directional indications are merely used to explain the relative positional relationship, movement conditions, etc. between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indications are correspondingly changed.
In conclusion, the invention provides the Al with high refractive index contrast 2 O 3 Al x Ga 1-x A manufacturing method of As DBR VCSEL converts the high Al% component AlGaAs (n-3.01) part of DBR above MQW layer into Al 2 O 3 As the lowest Al% component Al in the structure z Ga 1-z As forms a current aperture and controls the size of the current aperture by controlling the oxidation rate of the current aperture, so that the size of the current aperture can be conveniently adjusted and changed, and one or more combination modes of atomic layer deposition, sputtering, evaporation, electroplating and the like are used for filling ohmic metal to form a low-resistance electric conduction path, so that an on path with high heat conduction, low resistance and high power conversion efficiency is formed by AlGaAs/ohmic metal. That is, the Al% size relationship in the structure is x>z, the mainstream z today>x>y, the highest aluminum component is changed as the current aperture limiting layer.
The present invention is not limited to the above-mentioned embodiments, but is intended to be limited to the following embodiments, and any modifications, equivalent changes and variations in the above-mentioned embodiments can be made by those skilled in the art without departing from the scope of the present invention.
Claims (5)
1. Al with high refractive index contrast 2 O 3 Al x Ga 1-x The manufacturing method of the As DBR VCSEL is characterized by comprising the following steps:
major DBR Al over MQW layer x Ga 1-x As/Al y Ga 1-y As(x>y，0≤y<1) Medium and high Al% component Al x Ga 1-x The part of As is completely oxidized to be converted into Al 2 O 3 Forming Al on a desired optical path 2 O 3 /Al y Ga 1-y As DBR stack structure with at least one layer of low Al% component Al nearest to MQW in the structure z Ga 1-z As forms a current aperture and the size of the current aperture is controlled by controlling the oxidation rate thereof, wherein the Al% component satisfies x>Max(y,z)；
Completely oxidizing the peripheral portion to form Al 2 O 3 Removing by chemical etching to retain Al of optical path 2 O 3 /Al y Ga 1-y An As DBR stack structure;
removing Al of peripheral portion 2 O 3 The space is filled with ohmic metal by one or more of atomic layer deposition, sputtering, evaporation and electroplating to form a low-resistance electrical conduction path.
2. A high refractive index contrast Al according to claim 1 2 O 3 Al x Ga 1-x The manufacturing method of the As DBR VCSEL is characterized by further comprising the steps of epitaxial growth, platform etching and upper electrode manufacturing.
3. A high refractive index contrast Al according to claim 1 2 O 3 Al x Ga 1-x The manufacturing method of the As DBR VCSEL is characterized by further comprising the step of removing the Al at the peripheral part 2 O 3 The MQW is protected to be close to Al by negative photoresistance before 2 O 3 。
4. A high refractive index contrast Al according to claim 1 2 O 3 Al x Ga 1-x A manufacturing method of an As DBR VCSEL is characterized in that the method comprises the following steps of 2 O 3 An etching process is used.
5. A high refractive index contrast Al according to claim 1 2 O 3 Al x Ga 1-x The manufacturing method of the As DBR VCSEL is characterized by further comprising the following steps of secondary mesa etching, lower electrode manufacturing, dielectric layer coating and welding pad evaporation.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111356428.6A CN114268020B (en) | 2021-11-16 | 2021-11-16 | Al with high refractive index contrast 2 O 3 Al x Ga 1-x As DBR VCSEL manufacturing method |
| TW111138069A TWI800464B (en) | 2021-11-16 | 2022-10-06 | Fabrication Method of AlOAlxGa-xAs DBR VCSEL with High Refractive Index Contrast |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111356428.6A CN114268020B (en) | 2021-11-16 | 2021-11-16 | Al with high refractive index contrast 2 O 3 Al x Ga 1-x As DBR VCSEL manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114268020A CN114268020A (en) | 2022-04-01 |
| CN114268020B true CN114268020B (en) | 2023-11-28 |
Family
ID=80825099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111356428.6A Active CN114268020B (en) | 2021-11-16 | 2021-11-16 | Al with high refractive index contrast 2 O 3 Al x Ga 1-x As DBR VCSEL manufacturing method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114268020B (en) |
| TW (1) | TWI800464B (en) |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR980012740A (en) * | 1996-07-30 | 1998-04-30 | 김광호 | Surface light laser and method of manufacturing the same |
| EP0939471A1 (en) * | 1998-02-25 | 1999-09-01 | Nippon Telegraph and Telephone Corporation | Vertical-cavity surface-emitting semiconductor laser |
| JP2000332357A (en) * | 1999-05-20 | 2000-11-30 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JP2002033546A (en) * | 2000-07-19 | 2002-01-31 | Canon Inc | Surface emitting optical element, surface emitting optical element mount, its manufacturing method and optical wiring device using the same |
| KR101466703B1 (en) * | 2013-05-29 | 2014-12-10 | 주식회사 레이칸 | Wideband tunable vertical-cavity surface-emitting laser |
| CN107437723A (en) * | 2017-09-21 | 2017-12-05 | 苏州全磊光电有限公司 | A kind of epitaxial structure for VCSEL array laser and preparation method thereof |
| DE202018001341U1 (en) * | 2017-04-04 | 2018-05-15 | Apple Inc. | VCSELs with improved optical and electrical confinement |
| CN207459396U (en) * | 2017-09-21 | 2018-06-05 | 苏州全磊光电有限公司 | A kind of epitaxial structure for VCSEL array laser |
| WO2019141545A1 (en) * | 2018-01-19 | 2019-07-25 | Koninklijke Philips N.V. | Vertical cavity surface emitting laser device with integrated photodiode |
| CN110433878A (en) * | 2019-08-21 | 2019-11-12 | 北京工业大学 | A kind of liquid detecting chip system of the optical phase difference based on VCSEL coupling array |
| CN111435781A (en) * | 2019-01-15 | 2020-07-21 | 中国科学院半导体研究所 | Vertical cavity surface emitting semiconductor laser structure |
| CN111682402A (en) * | 2020-06-19 | 2020-09-18 | 北京工业大学 | Surface-emitting semiconductor laser chip with symmetrical DBR structure and preparation method thereof |
| CN112018598A (en) * | 2020-10-28 | 2020-12-01 | 深圳市德明利技术股份有限公司 | Method for correcting (100) crystal face oxidation aperture |
| EP3796079A1 (en) * | 2019-09-23 | 2021-03-24 | Samsung Electronics Co., Ltd. | Optical modulator and beam steering system including the same |
| CN113241582A (en) * | 2021-04-19 | 2021-08-10 | 深圳市德明利光电有限公司 | VCSEL chip and manufacturing method thereof |
| CN114188816A (en) * | 2021-11-16 | 2022-03-15 | 深圳市德明利光电有限公司 | Inverted VCSEL structure of high-refractive-index contrast DBR and process method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8855149B2 (en) * | 2011-08-11 | 2014-10-07 | Ludwig-Maximilians-Universität München | Dynamical Fabry-Pérot tuneable filter device |
| TWI710187B (en) * | 2017-02-09 | 2020-11-11 | 光環科技股份有限公司 | Structure of vcsel and method for manufacturing the same |
| WO2019036383A1 (en) * | 2017-08-14 | 2019-02-21 | Trilumina Corp. | A surface-mount compatible vcsel array |
| KR102117084B1 (en) * | 2018-08-20 | 2020-06-01 | 광전자 주식회사 | Highly efficient oxidation-type VCSEL with improved light extraction and method for manufacturing thereof |
| WO2020205166A1 (en) * | 2019-04-01 | 2020-10-08 | Apple Inc. | Vcsel array with tight pitch and high efficiency |
-
2021
- 2021-11-16 CN CN202111356428.6A patent/CN114268020B/en active Active
-
2022
- 2022-10-06 TW TW111138069A patent/TWI800464B/en active
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR980012740A (en) * | 1996-07-30 | 1998-04-30 | 김광호 | Surface light laser and method of manufacturing the same |
| EP0939471A1 (en) * | 1998-02-25 | 1999-09-01 | Nippon Telegraph and Telephone Corporation | Vertical-cavity surface-emitting semiconductor laser |
| JP2000332357A (en) * | 1999-05-20 | 2000-11-30 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JP2002033546A (en) * | 2000-07-19 | 2002-01-31 | Canon Inc | Surface emitting optical element, surface emitting optical element mount, its manufacturing method and optical wiring device using the same |
| KR101466703B1 (en) * | 2013-05-29 | 2014-12-10 | 주식회사 레이칸 | Wideband tunable vertical-cavity surface-emitting laser |
| DE202018001341U1 (en) * | 2017-04-04 | 2018-05-15 | Apple Inc. | VCSELs with improved optical and electrical confinement |
| CN107437723A (en) * | 2017-09-21 | 2017-12-05 | 苏州全磊光电有限公司 | A kind of epitaxial structure for VCSEL array laser and preparation method thereof |
| CN207459396U (en) * | 2017-09-21 | 2018-06-05 | 苏州全磊光电有限公司 | A kind of epitaxial structure for VCSEL array laser |
| WO2019141545A1 (en) * | 2018-01-19 | 2019-07-25 | Koninklijke Philips N.V. | Vertical cavity surface emitting laser device with integrated photodiode |
| CN111435781A (en) * | 2019-01-15 | 2020-07-21 | 中国科学院半导体研究所 | Vertical cavity surface emitting semiconductor laser structure |
| CN110433878A (en) * | 2019-08-21 | 2019-11-12 | 北京工业大学 | A kind of liquid detecting chip system of the optical phase difference based on VCSEL coupling array |
| EP3796079A1 (en) * | 2019-09-23 | 2021-03-24 | Samsung Electronics Co., Ltd. | Optical modulator and beam steering system including the same |
| CN111682402A (en) * | 2020-06-19 | 2020-09-18 | 北京工业大学 | Surface-emitting semiconductor laser chip with symmetrical DBR structure and preparation method thereof |
| CN112018598A (en) * | 2020-10-28 | 2020-12-01 | 深圳市德明利技术股份有限公司 | Method for correcting (100) crystal face oxidation aperture |
| CN113241582A (en) * | 2021-04-19 | 2021-08-10 | 深圳市德明利光电有限公司 | VCSEL chip and manufacturing method thereof |
| CN114188816A (en) * | 2021-11-16 | 2022-03-15 | 深圳市德明利光电有限公司 | Inverted VCSEL structure of high-refractive-index contrast DBR and process method thereof |
Non-Patent Citations (2)
| Title |
|---|
| EFFECTS OF Si, Al2O3 AND SiC SUBSTRATES ON THE CHARACTERISTICS OF DBRS STRUCTURE FOR GaN BASED LASER;N.M. Ahmed;《Journal of Physical Science》;第17卷(第2期);151-156 * |
| 湿法氧化工艺对VCSEL器件性能的影响;李海军;钟景昌;郝永琴;赵英杰;马建立;;中国电子科学研究院学报(第04期);369-372 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114268020A (en) | 2022-04-01 |
| TW202322505A (en) | 2023-06-01 |
| TWI800464B (en) | 2023-04-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6320893B1 (en) | Surface emitting semiconductor laser | |
| US6931042B2 (en) | Long wavelength vertical cavity surface emitting laser | |
| US6661823B1 (en) | Vertical resonator type surface light emitting semiconductor laser device and fabrication method thereof | |
| US20050220160A1 (en) | Vertical cavity surface emitting semiconductor laser device | |
| JPH1197796A (en) | Iii-v compound surface emission laser and fabrication thereof | |
| JPH10233557A (en) | Semiconductor light emitting element | |
| US8218596B2 (en) | Vertical cavity surface emitting laser and method of manufacturing the same | |
| Yu et al. | 1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE | |
| US20110002353A1 (en) | Surface emitting laser, surface emitting laser array, and image formation apparatus | |
| US6846685B2 (en) | Vertical-cavity surface-emitting semiconductor laser | |
| CN114188816B (en) | Flip VCSEL structure of high refractive index contrast DBR and process method thereof | |
| JP2003347670A (en) | Surface-emission semiconductor laser element and laser array | |
| CN114268020B (en) | Al with high refractive index contrast 2 O 3 Al x Ga 1-x As DBR VCSEL manufacturing method | |
| US6737290B2 (en) | Surface-emitting semiconductor laser device and method for fabricating the same, and surface-emitting semiconductor laser array employing the laser device | |
| JP2001332812A (en) | Surface emitting semiconductor laser element | |
| JPWO2007135772A1 (en) | Light emitting element | |
| JP4115125B2 (en) | Surface emitting semiconductor laser device | |
| US20210159668A1 (en) | Vertical cavity surface emitting device with a buried index guiding current confinement layer | |
| JP2007165501A (en) | Surface-emitting semiconductor laser and its manufacturing method | |
| CN113809639A (en) | VCSEL and method for controlling light emitting direction of VCSEL | |
| TW202324865A (en) | Manufacturing method of high-thermal-conductivity and low-resistance VCSEL (Vertical Cavity Surface Emitting Laser) with controllable optical path and VCSEL | |
| CN114204415B (en) | VCSEL structure | |
| CN117134194B (en) | Vertical cavity surface emitting laser and preparation method thereof | |
| CN216085701U (en) | VCSEL (vertical cavity surface emitting laser) | |
| US20030035452A1 (en) | Surface emitting semiconductor laser device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 518000 B125, 1st floor, Shunfeng industrial building, 2 Hongliu Road, Fubao community, Fubao street, Futian District, Shenzhen City, Guangdong Province Applicant after: Shenzhen Jiaminli Photoelectric Co.,Ltd. Address before: 518000 B125, 1st floor, Shunfeng industrial building, 2 Hongliu Road, Fubao community, Fubao street, Futian District, Shenzhen City, Guangdong Province Applicant before: Shenzhen deminli optoelectronics Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |