CN115117733B - Epitaxial structure of high-quality hetero-tunneling junction and preparation method - Google Patents
Epitaxial structure of high-quality hetero-tunneling junction and preparation method Download PDFInfo
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
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- 239000000758 substrate Substances 0.000 claims abstract description 12
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- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 12
- ILXWFJOFKUNZJA-UHFFFAOYSA-N ethyltellanylethane Chemical compound CC[Te]CC ILXWFJOFKUNZJA-UHFFFAOYSA-N 0.000 claims description 6
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 claims description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
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- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 3
- 229910000064 phosphane Inorganic materials 0.000 claims description 3
- 239000000969 carrier Substances 0.000 claims 1
- 230000009643 growth defect Effects 0.000 abstract description 12
- 238000001556 precipitation Methods 0.000 abstract description 5
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a high-quality hetero-tunneling junction epitaxial structure and a preparation method thereof, comprising the following steps: in the MOCVD reaction chamber, epitaxially growing a buffer layer on the surface of the GaAs substrate; epitaxially growing an N-type DBR layer on the surface of the buffer layer; alternately and epitaxially growing a quantum well, a low-doped P-type Al xGa(1‑x) transition layer, a tunneling junction, a GaAs protective layer, a low-doped N-type Al xGa(1‑x) As transition layer and a quantum well on the surface of the N-type DBR layer in sequence to form a resonant cavity; epitaxially growing a P-type DBR layer on the surface of the quantum well at the outermost layer of the resonant cavity; and growing an ohmic contact layer on the surface of the P-type DBR layer. The invention effectively inhibits the precipitation of In atoms, reduces InGaP growth defects, ensures the growth quality of tunneling junctions, increases the power of lasers, effectively improves the growth defects of epitaxial wafers and ensures the luminescence performance of the vertical cavity surface emitting lasers.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an epitaxial structure of a high-quality hetero-tunneling junction and a preparation method thereof.
Background
VCSELs (vertical cavity surface emitting lasers) continue to grow rapidly in the market by virtue of excellent beam quality, simple design, and compact size. VCSELs can provide assistance for consumer applications such as face recognition in 3D cameras and mobile devices, as well as industrial applications such as near light detection and ranging (LiDAR), machine vision, and robotics. Meanwhile, the VCSEL can perfectly provide a chip laser and an array laser for the laser radar of an automatic driving technology, and is also an important technical route in the laser radar, but the traditional single junction VCSEL has a relatively short projection distance due to relatively low power, so that the laser radar requirement cannot be completely met, the multi-section VCSEL technology can provide high peak optical power density and high efficiency required by long-distance application by reducing required current and simplifying an electric driver and packaging design, so that the projection distance is increased, and therefore, a heterogeneous tunneling junction with excellent preparation performance is an important point for the current multi-junction VCSEL development.
However, a part of specific tunneling junction is composed of two different material systems, usually AlGaAs/InGaP, and needs high carrier concentration to shorten the depletion region distance, the carrier concentration is usually higher than 1E18 level, so that lower growth temperature is needed, two sides of the tunneling junction are usually required to grow a P-type AlGaAs layer and an N-type AlGaAs layer with lower carrier concentration respectively, and the transition layers at two sides of the tunneling junction need higher growth temperature.
Disclosure of Invention
In view of the above-mentioned drawbacks or shortcomings, an object of the present invention is to provide an epitaxial structure of a high quality hetero-tunneling junction and a method of fabricating the same.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a preparation method of a high-quality hetero-tunneling junction epitaxial structure comprises the following steps:
s1, placing a selected GaAs substrate in an MOCVD reaction chamber;
S2, epitaxially growing a buffer layer on the surface of the GaAs substrate in the MOCVD reaction chamber;
s3, in the MOCVD reaction chamber, epitaxially growing an N-type DBR layer on the surface of the buffer layer;
S4, in the MOCVD reaction chamber, alternately and epitaxially growing a quantum well, a low-doped P-type Al xGa(1-x) As transition layer, a tunneling junction, a GaAs protective layer, a low-doped N-type Al xGa(1-x) As transition layer and a quantum well on the surface of the N-type DBR layer in sequence to form a resonant cavity; the tunneling junction structure comprises high-doped P-type Al xGa(1-x) As and N-type In xGa(1-x) P which are sequentially epitaxially grown on the surface of the low-doped P-type Al xGa(1-x) As transition layer; the GaAs protective layer is epitaxially grown on the surface of the N-type In xGa(1-x) P;
S5, epitaxially growing a P-type DBR layer on the surface of the quantum well at the outermost layer of the resonant cavity in the MOCVD reaction chamber;
and S6, growing an ohmic contact layer on the surface of the P-type DBR layer in the MOCVD reaction chamber.
Further, in S4, maintaining the growth temperature of the MOCVD reaction chamber at 700 , and epitaxially growing a quantum well on the surface of the N-type DBR layer under the condition that the growth pressure is maintained at 100 mbar; after the quantum well epitaxial growth is finished, maintaining the growth temperature and the growth pressure of the MOCVD reaction chamber unchanged, and epitaxially growing a low-doped P-type Al xGa(1-x) As transition layer on the surface of the quantum well; in the low-doped P-type Al xGa(1-x) As transition layer, x is more than or equal to 0.1 and less than or equal to 0.3.
Further, in S4, when the growth of the low doped P-type Al xGa(1-x) As transition layer is completed, the growth temperature of the MOCVD reactor is adjusted to 650 , the growth pressure is adjusted to 150mbar, trimethylgallium (TMGa), trimethylaluminum (TMAl), arsine (AsH 3) is used As a growth source, carbon tetrabromide (CBr 4) is used As a P-type doping source, and a layer of high doped P-type Al 0.25Ga0.75 As is grown on the surface of the low doped P-type Al xGa(1-x) As transition layer.
Preferably, the carrier concentration of the highly doped P-type Al 0.25Ga0.75 As is 1E20, and the thickness of the epitaxial growth layer is 10nm.
Further, in S4, after the epitaxial growth of the highly doped P-type Al 0.25Ga0.75 As is completed, the growth temperature of the MOCVD reactor is maintained at 650 , the growth pressure is maintained at 150mbar, trimethylgallium (TMGa), trimethylindium (TMIn), phosphane (PH 3) are used As growth sources, diethyl tellurium (DeTe) is used As an N-type doping source, and an N-type in0.5ga0.5p layer is epitaxially grown on the surface of the highly doped P-type Al 0.25Ga0.75 As transition layer.
Preferably, the carrier concentration of the N-type In 0.5Ga0.5 P layer is 1E20, and the thickness of the epitaxial growth layer is 10nm.
Further, in S4, after the epitaxial growth of the N-type In 0.5Ga0.5 P layer In the tunneling junction is finished, the growth temperature of the MOCVD reaction chamber is kept at 650 , the growth pressure is kept at 150mbar, and a GaAs protective layer is epitaxially grown on the surface of the In 0.5Ga0.5 P layer; the thickness of the GaAs protective layer in epitaxial growth is 2.5nm.
Further, in S4, when the epitaxial growth of the GaAs protective layer is finished, and the growth temperature of the MOCVD reaction chamber is 700 and the growth pressure is 100mbar, an epitaxial growth low-doped N-type Al 0.3Ga0.7 As transition layer and a quantum well are sequentially laminated on the surface of the GaAs protective layer.
Preferably, in S3, the N-type DBR layer is formed of 30 to 40 groups of Al 0.9Ga0.1As/Al0.05Ga0.95 As sequentially grown on the surface of the buffer layer;
In S5, the P-type DBR layer is formed by 20-30 groups of Al 0.9Ga0.1As/Al0.05Ga0.95 As which are sequentially stacked and grown on the surface of the quantum well at the outermost layer of the resonant cavity.
In addition, a high-quality hetero-tunneling junction epitaxial structure is also provided, and the high-quality hetero-tunneling junction epitaxial structure is obtained by the high-quality hetero-tunneling junction epitaxial structure preparation method.
Compared with the prior art, the invention has the beneficial effects that:
The invention provides a preparation method of a high-quality hetero-tunneling junction epitaxial structure, which comprises the steps of growing an ultrathin protective layer at a low temperature after the growth of N-type InGaP of the hetero-tunneling junction is finished, effectively limiting the growth of subsequent low-doped N-type Al 0.3Ga0.7 As by combining with a pressure condition of 150 mbar, solving the InGaP growth defect In the heating process, ensuring the growth quality of the tunneling junction, effectively improving the growth defect of an epitaxial wafer, increasing the power of a laser, ensuring the luminous performance of a vertical cavity surface emitting laser, and simultaneously improving the chip yield.
Drawings
FIG. 1 is a flow chart of a method for fabricating a heterojunction epitaxial structure in accordance with the present invention;
FIG. 2 is a schematic diagram of a heterojunction epitaxial structure in accordance with the present invention;
FIG. 3 is a graph of Particle defect distribution of a VCSEL surface incorporating a high quality heterojunction epitaxial structure of the present invention;
Fig. 4 is a graph of Particle defect distribution of a VCSEL surface of a conventional common tunnel junction epitaxial structure.
Wherein, a 1-GaAs substrate; 2-a buffer layer; 3-N type DBR layers; 4-quantum well; 5-a low doped P-type Al xGa(1-x) As transition layer; 6-tunneling junction; 61-a highly doped p-type Al xGa(1-x) As layer; 62-N type In xGa(1-x) layers; 7-a GaAs protective layer; 8-a low doped N-type Al xGa(1-x) As transition layer; 9-P-type DBR layers; 10-ohmic contact layer.
Detailed Description
The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention.
The PN junction (hetero tunneling junction) is mainly formed by two different material systems, is usually AlGaAs/InGaP, and needs high carrier concentration to shorten the depletion region distance, and the carrier concentration is usually higher than the 1E18 level, so that lower growth temperature is needed; but at the same time, the AlGaAs P-type layer and the AlGaAs N-type layer with lower carrier concentration are usually grown on the two sides of the tunneling junction, and the AlGaAs P-type layer and the AlGaAs N-type layer need higher growth temperature; therefore, when the AlGaAs N-type layer is grown by heating immediately after the growth of the tunneling junction is finished, a large amount of In atoms are precipitated, the growth defect of the tunneling junction is caused, the epitaxial growth defect is caused, and the performance of a device (VCSEL: vertical cavity surface emitting laser) is affected; therefore, the preparation of epitaxial structures with high quality hetero-tunneling junctions is becoming an important point in the current multi-junction VCSEL development.
In xGa(1-x)P,AlxGa(1-x) As is a ternary solid solution In the invention, and is usually required to be lattice matched with a substrate GaAs In the epitaxial growth process; the invention adopts MOCVD (Metal-organic Chemical Vapor DePosition) to grow an epitaxial layer structure on the GaAs substrate.
As shown in fig. 1, the embodiment of the invention provides a method for preparing a high-quality heterojunction epitaxial structure, which can be applied to an epitaxial layer of a vertical cavity surface emitting laser, and the high-quality heterojunction epitaxial structure is obtained; specifically, the preparation method of the epitaxial structure of the high-quality hetero-tunneling junction comprises the following steps:
S1, placing a selected substrate in an MOCVD reaction chamber; preferably, the substrate is a GaAs substrate 1;
s2, epitaxially growing a buffer layer 2 on the surface of the GaAs substrate 1 in the MOCVD reaction chamber; preferably, the buffer layer 2 is N-type GaAs with the thickness of 0.5nm;
S3, epitaxially growing an N-type DBR layer 3 (N-type distributed Bragg reflector layer) on the surface of the buffer layer 2 under the conditions that the growth temperature is 700 and the growth pressure is 100mbar in the MOCVD reaction chamber;
s4, in the MOCVD reaction chamber, alternately and epitaxially growing a quantum well 4, a low-doped P-type Al xGa(1-x) As transition layer 5, a tunneling junction 6, a GaAs protective layer 7, a low-doped N-type Al xGa(1-x) As transition layer 8 and the quantum well 4 on the surface of the N-type DBR layer 3 in sequence to form a resonant cavity; the tunneling junction 6 structure comprises a high doped P type Al xGa(1-x) As layer 61 and an N type In xGa(1-x) P layer 62 which are sequentially epitaxially grown on the surface of a low doped P type Al xGa(1-x) As transition layer 5; the GaAs protective layer 7 is epitaxially grown on the surface of the N-type In xGa(1-x) P layer 62; in S4, the N-type DBR layer 3 is grown by alternately stacking and repeating the growth three times in order, to form a resonant cavity in which multiple quantum wells and tunneling junctions are alternately stacked.
S5, in the MOCVD reaction chamber, maintaining the growth temperature at 700 , and epitaxially growing a P-type DBR layer 9 on the surface of the outermost quantum well under the condition that the growth pressure is 100 mbar;
s6, in the MOCVD reaction chamber, maintaining the growth temperature at 700 and the growth pressure at 100mbar, and growing an ohmic contact layer 10 on the surface of the P-type DBR layer 9.
Based on the above embodiment, in step S3, the N-type DBR layer 3 is formed of 30 to 40 sets of Al 0.9Ga0.1 As and Al 0.05Ga0.95 As sequentially grown on the buffer layer surface in a stacked manner, and the optical thicknesses of Al 0.9Ga0.1 As and Al 0.05Ga0.95 As are /4.
Based on the above embodiment, further, in step S4, the quantum well 4 is epitaxially grown on the surface of the N-type DBR layer 3 while maintaining the MOCVD reactor growth temperature at 700 and the growth pressure at 100 mbar. After the epitaxial growth of the quantum well 4 is finished, maintaining the growth temperature and the growth pressure of the MOCVD reaction chamber unchanged, epitaxially growing a low-doped P-type Al xGa(1-x) As transition layer 5 on the surface of the quantum well 4, wherein the carrier concentration is 2E19; preferably, in the low-doped P-type Al xGa(1-x) As transition layer 5, x is more than or equal to 0.1 and less than or equal to 0.3; the low doped P-type Al xGa(1-x) As transition layer 5 may be, for example, low doped P-type al0.1ga0.9as, low doped P-type al0.2ga0.8as or low doped P-type al0.3ga0.7as.
When the growth of the low-doped P-type Al xGa(1-x) As transition layer 5 is finished, the growth temperature of the MOCVD reaction chamber is adjusted to 650 , the growth pressure is adjusted to 150mbar, trimethylgallium (TMGa), trimethylaluminum (TMAL) and arsine (AsH 3) are taken As growth sources, carbon tetrabromide (CBr 4) is taken As a P-type doping source, a layer of high-doped P-type Al 0.25Ga0.75 As layer 61 is grown on the surface of the low-doped P-type Al xGa(1-x) As transition layer 5, and the carrier concentration of the high-doped P-type Al 0.25Ga0.75 As layer 61 is 1E20, and the thickness is 10nm. Because the lattice constants of Al atoms and Ga atoms are similar, the lattice mismatch between an Al xGa(1-x) As material system and GaAs is very small, and x is 0.25, so that the P-type Al xGa(1 -x) As material in the tunneling junction 6 adopts an Al 0.25Ga0.75 As semiconductor material.
After the epitaxial growth of the high-doped P-type Al 0.25Ga0.75 As layer is finished, the growth temperature of the MOCVD reaction chamber is kept at 650 , the growth pressure is kept at 150mbar, trimethyl gallium (TMGa), trimethyl indium (TMIn) and phosphane (PH 3) are used As growth sources, diethyl tellurium (DeTe) is used As an N-type doping source, an N-type In 0.5Ga0.5 P layer 62 is epitaxially grown on the surface of the high-doped P-type Al 0.25Ga0.75 As layer, and the carrier concentration of the N-type In 0.5Ga0.5 P layer 62 is 1E20 and the thickness is 10nm. When In xGa(1-x) P is lattice matched with GaAs, x is 0.5, so that an N-type In 0.5Ga0.5 P semiconductor material is adopted In the tunneling junction; in 0.5Ga0.5 P grown to ensure lattice matching, the In (indium) composition is very high.
Meanwhile, as the low-doped N-type AlGaAs transition layer 8 on the upper surface of the N-type In 0.5Ga0.5 P layer 62 In the tunneling junction 6 needs high-temperature and low-pressure conditions for epitaxial growth, in atom diffusion can be caused, in order to inhibit growth defects caused by In precipitation at high temperature, in an MOCVD reaction chamber, the growth temperature is kept at 650 , the growth pressure is kept at 150mbar, a very thin GaAs protective layer 7 is grown on the surface of the In0.5Ga0.5P layer, in combination with the selection of larger pressure (150 mbar), the In precipitation can be effectively inhibited, the InGaP growth defects are reduced, the epitaxial growth defects are overcome, and the light-emitting performance of the vertical cavity surface emitting laser is ensured. Preferably, the thickness of the GaAs protection layer 7 is 2.5nm, and the extremely thin thickness thereof has little influence on tunneling effect.
When the epitaxial growth of the GaAs protective layer 7 is finished, epitaxially growing a low-doped N-type Al 0.3Ga0.7 As transition layer on the surface of the GaAs protective layer 7 under the conditions that the growth temperature of an MOCVD reaction chamber is 700 and the growth pressure is 100 mbar; the thickness of the low-doped N-type Al 0.3Ga0.7 As transition layer 8 is 16nm, and the carrier concentration of the low-doped N-type Al 0.3Ga0.7 As transition layer 8 is 2E19.
After the epitaxial growth of the low-doped N-type Al 0.3Ga0.7 As transition layer 8 is finished, the growth temperature of the MOCVD reaction chamber is kept at 700 , the growth pressure is kept at 100mbar, and the quantum well 4 is epitaxially grown on the surface of the low-doped N-type Al 0.3Ga0.7 As transition layer 8.
Based on the above embodiment, in step S5, when the epitaxial growth of the uppermost quantum well 4 in the resonator is completed, the MOCVD reactor is maintained at 700 , the growth pressure is maintained at 100mbar, and the P-type DBR layer 9 is epitaxially grown on the surface of the quantum well 4, and the P-type DBR layer 9 is formed by 20-30 groups of Al 0.9Ga0.1As/Al0.05Ga0.95 As sequentially grown on the surface of the outermost quantum well 4 in the resonator.
In the second embodiment, as shown In fig. 2, in the epitaxial layer structure obtained by the preparation method of the high-quality hetero-tunneling junction epitaxial structure, a layer of ultrathin GaAs protection layer 7 is grown on the surface of the N-type InGaP layer of the hetero-tunneling junction at a low temperature, and meanwhile, in precipitation In the subsequent temperature rising process is effectively limited under the pressure condition of 150 mbar, so that the growth quality of the tunneling junction is ensured, the growth defect of an epitaxial wafer is obviously reduced, and the quality of a device is improved.
As shown in fig. 3 and fig. 4, surface defects of a VCSEL having a high-quality hetero-tunneling junction epitaxial structure in the present embodiment and a VCSEL having a normal tunneling junction epitaxial structure are detected, and comparison data are obtained as follows;
defect area (um) count table 1 (sample is a VCSEL of normal tunnel junction epitaxial structure):
| Distribution of | Lower limit of size | Upper limit of size | Point count |
| 1 | 0.00 | 20.00 | 31518 |
| 2 | >20.00 | 100.00 | 48376 |
| 3 | >100.00 | 500.00 | 40816 |
| 4 | >500.00 | 3000.00 | 39000 |
| 5 | >3000.00 | 2491 |
Defect area (um) count table 2 (sample is VCSEL with high quality hetero-tunneling junction epitaxial structure in the present application):
| Distribution of | Lower limit of size | Upper limit of size | Point count |
| 1 | 0.00 | 20.00 | 126 |
| 2 | >20.00 | 100.00 | 265 |
| 3 | >100.00 | 500.00 | 425 |
| 4 | >500.00 | 3000.00 | 1496 |
| 5 | >3000.00 | 1 |
Therefore, by combining the figure 3 and the figure 4, the defect distribution diagram of particles on the surface of the VCSEL can be intuitively and clearly seen, and the data analysis conclusion shows that the defects on the surface of an epitaxial wafer of the VCSEL containing a high-quality hetero-tunneling junction epitaxial structure are obviously improved, and the defect number is obviously reduced. Therefore, the technical scheme of the application effectively limits the precipitation of In the growth and temperature rising process of the low-doped N-type Al 0.3Ga0.7 As transition layer 8, overcomes the InGaP growth defect, ensures the growth quality of the tunneling junction, effectively improves the growth defect of the epitaxial wafer and ensures the power of the laser.
It will be apparent to those skilled in the art that the foregoing is merely illustrative of the preferred embodiments of this invention, and that certain modifications and variations may be made in part of this invention by those skilled in the art, all of which are shown and described with the understanding that they are considered to be within the scope of this invention.
Claims (10)
1. The preparation method of the high-quality hetero-tunneling junction epitaxial structure is characterized by comprising the following steps of:
s1, placing a selected GaAs substrate in an MOCVD reaction chamber;
S2, epitaxially growing a buffer layer on the surface of the GaAs substrate in the MOCVD reaction chamber;
s3, in the MOCVD reaction chamber, epitaxially growing an N-type DBR layer on the surface of the buffer layer;
S4, in the MOCVD reaction chamber, alternately and epitaxially growing a quantum well, a low-doped P-type Al xGa(1-x) As transition layer, a tunneling junction, a GaAs protective layer, a low-doped N-type Al xGa(1-x) As transition layer and a quantum well on the surface of the N-type DBR layer in sequence to form a resonant cavity; the tunneling junction structure comprises high-doped P-type Al xGa(1-x) As and N-type In xGa(1-x) P which are sequentially epitaxially grown on the surface of the low-doped P-type Al xGa(1-x) As transition layer; the GaAs protective layer is epitaxially grown on the surface of the N-type In xGa(1-x) P;
S5, epitaxially growing a P-type DBR layer on the surface of the quantum well at the outermost layer of the resonant cavity in the MOCVD reaction chamber;
and S6, growing an ohmic contact layer on the surface of the P-type DBR layer in the MOCVD reaction chamber.
2. The method of fabricating a heterojunction epitaxial structure as claimed in claim 1, wherein in S4, a quantum well is epitaxially grown on the surface of the N-type DBR layer while maintaining a MOCVD reactor growth temperature of 700 and a growth pressure of 100 mbar; after the quantum well epitaxial growth is finished, maintaining the growth temperature and the growth pressure of the MOCVD reaction chamber unchanged, and epitaxially growing a low-doped P-type Al xGa(1-x) As transition layer on the surface of the quantum well; in the low-doped P-type Al xGa(1-x) As transition layer, x is more than or equal to 0.1 and less than or equal to 0.3.
3. The method of claim 2, wherein in S4, when the growth of the low doped P-type Al xGa(1-x) As transition layer is completed, the growth temperature of the MOCVD reactor is adjusted to 650 , the growth pressure is adjusted to 150mbar, and a layer of highly doped P-type al0.25ga0.75as is grown on the surface of the low doped P-type Al xGa(1-x) As transition layer with trimethylgallium (TMGa), trimethylaluminum (TMAl), arsine (AsH 3) As a growth source and carbon tetrabromide (CBr 4) As a P-type doping source.
4. The method of claim 3, wherein the concentration of the highly doped P-type Al 0.25Ga0.75 As carriers is 1E20 and the thickness of the epitaxial growth layer is 10nm.
5. The method of claim 2, wherein In S4, after the epitaxial growth of the highly doped P-type Al 0.25Ga0.75 As is completed, the MOCVD reactor is maintained at 650 , the growth pressure is maintained at 150mbar, trimethylgallium (TMGa), trimethylindium (TMIn), phosphane (PH 3) are used As growth sources, diethyl tellurium (DeTe) is used As an N-type doping source, and an N-type In 0.5Ga0.5 P layer is epitaxially grown on the surface of the highly doped P-type Al 0.25Ga0.75 As.
6. The method of claim 5, wherein the carrier concentration of the N-type In 0.5Ga0.5 P layer is 1E20 and the thickness of the epitaxial growth layer is 10nm.
7. The method for fabricating a hetero-tunneling junction epitaxial structure according to claim 5, wherein In S4, after the epitaxial growth of the N-type In 0.5Ga0.5 P layer In the tunneling junction is completed, the MOCVD reactor is maintained at 650 , the growth pressure is maintained at 150mbar, and a GaAs protection layer is epitaxially grown on the surface of the In 0.5Ga0.5 P layer; the thickness of the GaAs protective layer in epitaxial growth is 2.5nm.
8. The method for preparing a hetero-tunneling junction epitaxial structure according to claim 1, wherein in S4, when the epitaxial growth of the GaAs protection layer is finished, and the growth temperature in the MOCVD reaction chamber is 700 and the growth pressure is 100mbar, a transition layer of low-doped N-type Al 0.3Ga0.7 As and a quantum well are sequentially stacked on the surface of the GaAs protection layer.
9. The method of fabricating a heterojunction epitaxial structure As claimed in claim 1, wherein in S3, the N-type DBR layer is formed of 30-40 sets of Al 0.9Ga0.1As/Al0.05Ga0.95 As sequentially grown on the surface of the buffer layer;
In S5, the P-type DBR layer is formed by 20-30 groups of Al 0.9Ga0.1As/Al0.05Ga0.95 As which are sequentially stacked and grown on the surface of the quantum well at the outermost layer of the resonant cavity.
10. A high quality heterojunction epitaxial structure obtained according to the method for manufacturing a heterojunction epitaxial structure according to any one of claims 1-9.
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| CN112909138A (en) * | 2021-01-04 | 2021-06-04 | 华灿光电(苏州）有限公司 | Epitaxial wafer of AlGaInP light-emitting diode and preparation method thereof |
| CN113964649A (en) * | 2021-11-02 | 2022-01-21 | 福建慧芯激光科技有限公司 | Epitaxial structure of high-power vertical-cavity surface-emitting laser |
| CN114551671A (en) * | 2022-02-21 | 2022-05-27 | 厦门士兰明镓化合物半导体有限公司 | LED epitaxial structure and preparation method thereof |
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| CN112909138A (en) * | 2021-01-04 | 2021-06-04 | 华灿光电(苏州）有限公司 | Epitaxial wafer of AlGaInP light-emitting diode and preparation method thereof |
| CN113964649A (en) * | 2021-11-02 | 2022-01-21 | 福建慧芯激光科技有限公司 | Epitaxial structure of high-power vertical-cavity surface-emitting laser |
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