CN115117733A - Epitaxial structure of high-quality heterogeneous tunneling junction and preparation method - Google Patents
Epitaxial structure of high-quality heterogeneous tunneling junction and preparation method Download PDFInfo
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- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 12
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- ILXWFJOFKUNZJA-UHFFFAOYSA-N ethyltellanylethane Chemical compound CC[Te]CC ILXWFJOFKUNZJA-UHFFFAOYSA-N 0.000 claims description 6
- 229910000064 phosphane Inorganic materials 0.000 claims description 6
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 6
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Abstract
The invention discloses a high-quality heterogeneous tunneling junction epitaxial structure and a preparation method thereof, wherein the preparation method comprises the following steps: epitaxially growing a buffer layer on the surface of the GaAs substrate in an MOCVD reaction chamber; epitaxially growing an N-type DBR layer on the surface of the buffer layer; sequentially and epitaxially growing a quantum well, a low-doped P-type AlxGa (1-x) As transition layer, a tunneling junction, a GaAs protective layer, a low-doped N-type AlxGa (1-x) As transition layer and a quantum well on the surface of the N-type DBR layer in an alternating mode to form a resonant cavity; epitaxially growing a P-type DBR layer on the surface of the quantum well at the outermost layer of the resonant cavity; and growing an ohmic contact layer on the surface of the P-type DBR layer. The invention effectively inhibits the precipitation of In atoms, reduces InGaP growth defects, ensures the growth quality of a tunneling junction, increases the power of the laser, effectively improves the growth defects of an epitaxial wafer and ensures the light-emitting performance of the vertical-cavity surface-emitting laser.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to an epitaxial structure of a high-quality heterogeneous tunneling junction and a preparation method thereof.
Background
The VCSEL (vertical cavity surface emitting laser) continues to grow rapidly in the market by virtue of its excellent beam quality, simple design and compact size. VCSELs can provide assistance for consumer applications such as face recognition in 3D cameras and mobile devices, as well as industrial applications such as short-range light detection and ranging (LiDAR), machine vision, and robotics, among others. Meanwhile, the VCSEL perfectly provides a chip-based and arrayed laser for the laser radar of the autopilot technology, and also becomes an important technical route in the laser radar, but the traditional single junction VCSEL has a short projection distance due to low power and cannot completely meet the requirements of the laser radar, and the multi-junction VCSEL technology can provide high peak optical power density and high efficiency required by remote application by reducing required current and simplifying an electrical driver and a packaging design so as to increase the projection distance, so that the preparation of the heterojunction tunneling junction with excellent performance becomes a key point for the development of the multi-junction VCSEL at present.
However, a part of the specific tunnel junctions is formed by two different material systems, which are usually AlGaAs/InGaP, and high carrier concentration is required to shorten the depletion region distance, and carrier concentration is usually higher than 1E18 level, so a lower growth temperature is required, while a transition layer P-type AlGaAs layer and an N-type AlGaAs layer with lower carrier concentration are also required to be grown on both sides of the tunnel junctions, respectively, and a higher growth temperature is required for the transition layers on both sides of the tunnel junctions, when the temperature is raised to grow the N-type AlGaAs layer immediately after the growth of the tunnel junctions is finished, a large amount of In atoms are precipitated, which causes the growth defect of the tunnel junctions, causes epitaxial growth defect, affects the performance of devices (VCSELs), and reduces the yield of chips.
Disclosure of Invention
In view of the above defects, the present invention provides an epitaxial structure of high quality hetero-tunneling junction and a method for fabricating the same.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a preparation method of a high-quality heterogeneous tunneling junction epitaxial structure comprises the following steps:
s1, placing the selected GaAs substrate in an MOCVD reaction chamber;
s2, epitaxially growing a buffer layer on the surface of the GaAs substrate in the MOCVD reaction chamber;
s3, in the MOCVD reaction chamber, epitaxially growing an N-type DBR layer on the surface of the buffer layer;
s4, in an MOCVD reaction chamber, sequentially and alternately growing a quantum well, a low-doped P-type AlxGa (1-x) As transition layer, a tunneling junction, a GaAs protective layer, a low-doped N-type AlxGa (1-x) As transition layer and the quantum well on the surface of the N-type DBR layer in an epitaxial manner to form a resonant cavity; the tunneling junction structure comprises high-doped P-type AlxGa (1-x) As and N-type InxGa (1-x) P which are sequentially epitaxially grown on the surface of a low-doped P-type AlxGa (1-x) As transition layer; the GaAs protective layer is epitaxially grown on the surface of the N-type InxGa (1-x) P;
s5, in the MOCVD reaction chamber, epitaxially growing a P-type DBR layer on the surface of the quantum well at the outermost layer of the resonant cavity;
and S6, growing an ohmic contact layer on the surface of the P-type DBR layer in the MOCVD reaction chamber.
Further, in S4, maintaining the growth temperature of the MOCVD reaction chamber at 700 ℃ and the growth pressure at 100mbar, and epitaxially growing a quantum well on the surface of the N-type DBR layer; after the epitaxial growth of the quantum well is finished, keeping the growth temperature and the growth pressure of the MOCVD reaction chamber unchanged, and epitaxially growing a low-doped P-type AlxGa (1-x) As transition layer on the surface of the quantum well; in the low-doped P-type AlxGa (1-x) As transition layer, x is more than or equal to 0.1 and less than or equal to 0.3.
Further, in S4, when the growth of the low-doped P-type AlxGa (1-x) As transition layer is finished, the growth temperature of the MOCVD reaction chamber is adjusted to 650 ℃, and the growth pressure is adjusted to 150mbar, trimethyl gallium (TMGa), trimethyl aluminum (TMAl), arsine (AsH3) are used As the growth source, carbon tetrabromide (CBr4) is used As the P-type doping source, and a layer of high-doped P-type al0.25ga0.75as is grown on the surface of the low-doped P-type AlxGa (1-x) As transition layer.
Preferably, the highly doped P type Al0.25Ga0.75As carrier concentration is 1E20, and the thickness of the epitaxial growth layer is 10 nm.
Further, in S4, after the epitaxial growth of the highly doped P-type al0.25ga0.75as is completed, the growth temperature of the MOCVD reactor is maintained at 650 ℃, the growth pressure is maintained at 150mbar, and an N-type in0.5ga0.5p layer is epitaxially grown on the surface of the highly doped P-type al0.25ga0.75as transition layer by using trimethyl gallium (TMGa), trimethyl indium (TMIn), phosphane (PH3) as a growth source and diethyl tellurium (DeTe) as an N-type doping source.
Preferably, the carrier concentration of the N-type In0.5Ga0.5P layer is 1E20, and the thickness of the epitaxial growth layer is 10 nm.
Further, in S4, after the epitaxial growth of the N-type In0.5Ga0.5P layer in the tunneling junction is finished, maintaining the growth temperature of the MOCVD reaction chamber at 650 ℃ and the growth pressure at 150mbar, and epitaxially growing a GaAs protective layer on the surface of the In0.5Ga0.5P layer; the epitaxial growth thickness of the GaAs protective layer is 2.5 nm.
Further, in S4, when the epitaxial growth of the GaAs protection layer is completed, and the growth temperature in the MOCVD reactor is 700 ℃ and the growth pressure is 100mbar, an epitaxially grown N-type al0.3ga0.7as transition layer and a quantum well are sequentially stacked on the surface of the GaAs protection layer.
Preferably, in S3, the N-type DBR layer is formed by sequentially stacking 30 to 40 sets of al0.9ga0.1as/al0.05ga0.95as grown on the surface of the buffer layer;
in S5, the P-type DBR layer is formed by stacking 20 to 30 sets of al0.9ga0.1as/al0.05ga0.95as sequentially grown on the surface of the quantum well at the outermost layer of the resonator.
In addition, a high-quality heterogeneous tunneling junction epitaxial structure is further provided, and the high-quality heterogeneous tunneling junction epitaxial structure is obtained through the preparation method of the high-quality heterogeneous tunneling junction epitaxial structure.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a preparation method of a high-quality heterogeneous tunneling junction epitaxial structure, which is characterized In that after the growth of N-type InGaP of a heterogeneous tunneling junction is finished, an ultrathin protective layer grows at low temperature, the subsequent growth of N-type Al0.3Ga0.7As doped with low impurities is effectively limited by combining the pressure condition of 150mba, and the precipitation of In (indium) atoms In the temperature rising process overcomes the growth defect of the InGaP, thereby ensuring the growth quality of the tunneling junction, effectively improving the growth defect of an epitaxial wafer, increasing the power of a laser, ensuring the luminous performance of a vertical cavity surface emitting laser and simultaneously improving the yield of chips.
Drawings
FIG. 1 is a flow chart of a method for fabricating a heterotunnel junction epitaxial structure according to the present invention;
FIG. 2 is a schematic diagram of a heterotunnel junction epitaxial structure in the present invention;
FIG. 3 is a diagram of the distribution of VCSEL surface Particle defects containing the high quality heterotunnel junction epitaxial structure of the present invention;
fig. 4 is a diagram of the defect distribution of VCSEL surface particles of the conventional ordinary tunnel junction epitaxial structure.
1-GaAs substrate; 2, a buffer layer; 3-N type DBR layer; 4-quantum well; 5-low doping P type AlxGa (1-x) As transition layer; 6-tunneling junction; 61-a highly doped p-type AlxGa (1-x) As layer; 62-N type InxGa (1-x) layer; 7-GaAs protective layer; 8-low doped N-type AlxGa (1-x) As transition layer; 9-P type DBR layer; 10-ohmic contact layer.
Detailed Description
The present invention will now be described in detail with reference to the drawings, wherein the described embodiments are only some, but not all embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, belong to the scope of the present invention.
The present application is primarily directed to PN junctions (hetero-tunneling junctions) formed of two different material systems, typically AlGaAs/InGaP, and requiring high carrier concentrations, typically above the 1E18 level, to shorten the depletion region distance, thus requiring lower growth temperatures; meanwhile, AlGaAs P-type layers and AlGaAs N-type layers with lower carrier concentration need to be grown on both sides of the tunnel junction, and the AlGaAs P-type layers and the AlGaAs N-type layers need higher growth temperature; therefore, when the AlGaAs N type layer is grown by raising the temperature immediately after the growth of the tunneling junction is finished, a large amount of In atoms are precipitated, the growth defect of the tunneling junction is caused, the epitaxial growth defect is caused, and the performance of a device (VCSEL: vertical cavity surface emitting laser) is influenced; therefore, the preparation of an epitaxial structure with a high quality hetero-tunneling junction becomes an important point for the development of the current multi-junction VCSEL.
In the invention, both InxGa (1-x) P and AlxGa (1-x) As are ternary solid solutions, and are required to be matched with GaAs lattices of a substrate in the epitaxial growth process; the invention adopts MOCVD (Metal-organic Chemical Vapor DePosition) to grow epitaxial layer structure on GaAs substrate.
As shown in fig. 1, an embodiment of the present invention provides a method for manufacturing a high-quality hetero-tunneling junction epitaxial structure, so as to obtain the high-quality hetero-tunneling junction epitaxial structure, which can be applied to an epitaxial layer of a vertical cavity surface emitting laser; specifically, the preparation method of the epitaxial structure of the high-quality heterogeneous tunneling junction comprises the following steps:
s1, placing the selected substrate in an MOCVD reaction chamber; preferably, the substrate is a GaAs substrate 1;
s2, epitaxially growing a buffer layer 2 on the surface of the GaAs substrate 1 in the MOCVD reaction chamber; preferably, the buffer layer 2 is N-type GaAs, and has a thickness of 0.5 nm;
s3, epitaxially growing an N-type DBR layer 3 (N-type distributed Bragg reflector layer) on the surface of the buffer layer 2 under the conditions that the growth temperature is 700 ℃ and the growth pressure is 100mbar in the MOCVD reaction chamber;
s4, in an MOCVD reaction chamber, sequentially and alternately growing quantum wells 4, low-doped P-type AlxGa (1-x) As transition layers 5, tunneling junctions 6, GaAs protective layers 7, low-doped N-type AlxGa (1-x) As transition layers 8 and quantum wells 4 on the surface of the N-type DBR layer 3 in an epitaxial manner to form a resonant cavity; the tunneling junction 6 structure comprises a high-doped P-type AlxGa (1-x) As layer 61 and an N-type InxGa (1-x) P layer 62 which are sequentially epitaxially grown on the surface of the low-doped P-type AlxGa (1-x) As transition layer 5; the GaAs protective layer 7 is epitaxially grown on the surface of the N-type InxGa (1-x) P layer 62; illustratively, in S4, the alternating stacking growth is repeated three times in the order of the surface epitaxial growth of the N-type DBR layer 3, so as to form a resonant cavity in which multiple quantum wells and tunnel junctions are stacked alternately.
S5, in an MOCVD reaction chamber, maintaining the growth temperature at 700 ℃ and the growth pressure at 100mbar, and epitaxially growing a P-type DBR layer 9 on the surface of the outmost quantum well;
and S6, growing the ohmic contact layer 10 on the surface of the P-type DBR layer 9 in the MOCVD reaction chamber under the conditions that the growth temperature is 700 ℃ and the growth pressure is 100 mbar.
Based on the above embodiment, in step S3, the N-type DBR layer 3 is formed of 30-40 sets of Al0.9Ga0.1As and Al0.05Ga0.95As grown in this order on the buffer layer surface, and the optical thicknesses of Al0.9Ga0.1As and Al0.05Ga0.95As are each λ/4.
Based on the above embodiment, further, in step S4, the quantum well 4 is epitaxially grown on the surface of the N-type DBR layer 3 while maintaining the growth temperature of the MOCVD reactor at 700 ℃ and the growth pressure at 100 mbar. After the epitaxial growth of the quantum well 4 is finished, keeping the growth temperature and the growth pressure of the MOCVD reaction chamber unchanged, and epitaxially growing a low-doped P-type AlxGa (1-x) As transition layer 5 on the surface of the quantum well 4, wherein the carrier concentration is 2E 19; preferably, in the low-doped P-type AlxGa (1-x) As transition layer 5, x is more than or equal to 0.1 and less than or equal to 0.3; illustratively, the low-doped P-type AlxGa (1-x) As transition layer 5 may be low-doped P-type al0.1ga0.9as, low-doped P-type al0.2ga0.8as, or low-doped P-type al0.3ga0.7as.
When the growth of the low-doped P-type AlxGa (1-x) As transition layer 5 is finished, the growth temperature of an MOCVD reaction chamber is adjusted to 650 ℃, the growth pressure is adjusted to 150mbar, trimethyl gallium (TMGa), trimethyl aluminum (TMAl) and arsine (AsH3) are used As growth sources, carbon tetrabromide (CBr4) is used As a P-type doping source, a high-doped P-type Al0.25Ga0.75As layer 61 is grown on the surface of the low-doped P-type AlxGa (1-x) As transition layer 5, the carrier concentration of the high-doped P-type Al0.25Ga0.75As layer 61 is 1E20, and the thickness is 10 nm. Due to the fact that lattice constants of Al atoms and Ga atoms are close, lattice mismatch between an AlxGa (1-x) As material system and GaAs is small, x is 0.25, and therefore the P-type AlxGa (1-x) As material in the tunneling junction 6 is made of an Al0.25Ga0.75As semiconductor material.
After the epitaxial growth of the highly doped P-type Al0.25Ga0.75As layer is finished, the growth temperature of an MOCVD reaction chamber is kept at 650 ℃, the growth pressure is kept at 150mbar, trimethyl gallium (TMGa), trimethyl indium (TMIn) and phosphane (PH3) are used as growth sources, diethyl tellurium (DeTe) is used as an N-type doping source, an N-type In0.5Ga0.5P layer 62 is epitaxially grown on the surface of the highly doped P-type Al0.25Ga0.75As layer, the carrier concentration of the N-type In0.5P layer 62 is 1E20, and the thickness is 10 nm. When InxGa (1-x) P is lattice-matched with GaAs, x is 0.5, so an N-type In0.5Ga0.5P semiconductor material is adopted in the tunneling junction; In0.5Ga0.5P, which is grown to ensure lattice matching, has a very high In composition.
Meanwhile, as the low-doped N-type AlGaAs transition layer 8 on the upper surface of the N-type In0.5Ga0.5P layer 62 In the tunneling junction 6 needs high-temperature and low-pressure conditions for epitaxial growth, which can cause In atom diffusion, In order to inhibit growth defects caused by In precipitation at high temperature, the growth temperature is kept at 650 ℃ and the growth pressure is kept at 150mbar In an MOCVD reaction chamber, a very thin GaAs protective layer 7 is grown on the surface of the In0.5Ga0.5P layer, and the precipitation of In can be effectively inhibited by combining the selected pressure (150mbar), the InGaP growth defects are reduced, the epitaxial growth defects are overcome, and the light emitting performance of the vertical cavity surface emitting laser is ensured. Preferably, the thickness of the GaAs protective layer 7 is 2.5nm, and the extremely thin thickness has little influence on the tunneling effect.
When the epitaxial growth of the GaAs protective layer 7 is finished, epitaxially growing a low-doped N-type Al0.3Ga0.7As transition layer on the surface of the GaAs protective layer 7 under the conditions that the growth temperature of an MOCVD reaction chamber is 700 ℃ and the growth pressure is 100 mbar; the thickness of the low-doped N-type Al0.3Ga0.7As transition layer 8 is 16nm, and the carrier concentration of the low-doped N-type Al0.3Ga0.7As transition layer 8 is 2E 19.
After the epitaxial growth of the low-doped N-type Al0.3Ga0.7As transition layer 8 is finished, the growth temperature of the MOCVD reaction chamber is kept at 700 ℃, the growth pressure is kept at 100mbar, and the quantum well 4 is epitaxially grown on the surface of the low-doped N-type Al0.3Ga0.7As transition layer 8.
Based on the above embodiment, in step S5, when the epitaxial growth of the uppermost quantum well 4 in the resonant cavity is finished, the MOCVD reaction chamber is maintained at 700 ℃ and the growth pressure is maintained at 100mbar, and a P-type DBR layer 9 is epitaxially grown on the surface of the quantum well 4, wherein the P-type DBR layer 9 is formed by sequentially stacking 20 to 30 groups of al0.9ga0.1as/al0.05ga0.95as grown on the surface of the uppermost quantum well 4 in the resonant cavity.
In the second embodiment, as shown In fig. 2, according to the epitaxial layer structure obtained by the preparation method of the high-quality hetero-tunneling junction epitaxial structure, an ultra-thin GaAs protective layer 7 is grown on the surface of the N-type InGaP layer of the hetero-tunneling junction at a low temperature, and In precipitation In the subsequent temperature rise process is effectively limited under the pressure condition of 150mba, so that the growth quality of the tunneling junction is ensured, the growth defects of an epitaxial wafer are remarkably reduced, and the device quality is improved.
As shown in fig. 3 and 4, the surface defects of the VCSEL having the high-quality hetero-tunnel junction epitaxial structure in the present embodiment and the VCSEL having the ordinary tunnel junction epitaxial structure are detected, and the following comparative data are obtained;
defect area (um) count table 1 (sample VCSEL of ordinary tunnel junction epitaxial structure):
| distribution of | Lower limit of size | Upper limit of size | Counting number |
| 1 | 0.00 | 20.00 | 31518 |
| 2 | >20.00 | 100.00 | 48376 |
| 3 | >100.00 | 500.00 | 40816 |
| 4 | >500.00 | 3000.00 | 39000 |
| 5 | >3000.00 | 2491 |
Defect area (um) count table 2 (sample is a VCSEL containing a high quality heterotunnel junction epitaxial structure in this application):
| distribution of | Lower limit of size | Upper limit of size | Counting number |
| 1 | 0.00 | 20.00 | 126 |
| 2 | >20.00 | 100.00 | 265 |
| 3 | >100.00 | 500.00 | 425 |
| 4 | >500.00 | 3000.00 | 1496 |
| 5 | >3000.00 | 1 |
Therefore, with reference to fig. 3 and 4, the VCSEL surface Particle defect distribution diagram can be visually and clearly seen, and the data analysis conclusion of the VCSEL having the high-quality hetero-tunneling junction epitaxial structure is that the surface defects of the epitaxial wafer are obviously improved, and the number of defects is obviously reduced. Therefore, the technical scheme effectively limits the precipitation of In the growth and temperature rise process of the low-doped N-type Al0.3Ga0.7As transition layer 8, overcomes the growth defects of InGaP, ensures the growth quality of a tunnel junction, effectively improves the growth defects of an epitaxial wafer and ensures the power of a laser.
It will be appreciated by those skilled in the art that the above embodiments are merely preferred embodiments of the invention, and thus, modifications and variations may be made in the invention by those skilled in the art, which will embody the principles of the invention and achieve the objects and objectives of the invention while remaining within the scope of the invention.
Claims (10)
1. A preparation method of a high-quality heterogeneous tunneling junction epitaxial structure is characterized by comprising the following steps:
s1, placing the selected GaAs substrate in an MOCVD reaction chamber;
s2, epitaxially growing a buffer layer on the surface of the GaAs substrate in the MOCVD reaction chamber;
s3, in the MOCVD reaction chamber, epitaxially growing an N-type DBR layer on the surface of the buffer layer;
s4, in an MOCVD reaction chamber, sequentially and alternately growing a quantum well, a low-doped P-type AlxGa (1-x) As transition layer, a tunneling junction, a GaAs protective layer, a low-doped N-type AlxGa (1-x) As transition layer and the quantum well on the surface of the N-type DBR layer in an epitaxial manner to form a resonant cavity; the tunneling junction structure comprises high-doped P-type AlxGa (1-x) As and N-type InxGa (1-x) P which are sequentially epitaxially grown on the surface of a low-doped P-type AlxGa (1-x) As transition layer; the GaAs protective layer is epitaxially grown on the surface of the N-type InxGa (1-x) P;
s5, in the MOCVD reaction chamber, epitaxially growing a P-type DBR layer on the surface of the quantum well at the outermost layer of the resonant cavity;
and S6, growing an ohmic contact layer on the surface of the P-type DBR layer in the MOCVD reaction chamber.
2. The preparation method of the heterojunction epitaxial structure of the heterojunction as claimed in claim 1, wherein in S4, maintaining the growth temperature of the MOCVD reaction chamber at 700 ℃ and the growth pressure at 100mbar, and epitaxially growing a quantum well on the surface of the N-type DBR layer; after the epitaxial growth of the quantum well is finished, keeping the growth temperature and the growth pressure of the MOCVD reaction chamber unchanged, and epitaxially growing a low-doped P-type AlxGa (1-x) As transition layer on the surface of the quantum well; in the low-doped P-type AlxGa (1-x) As transition layer, x is more than or equal to 0.1 and less than or equal to 0.3.
3. The method of claim 2, wherein in S4, when the growth of the low-doped P-type AlxGa (1-x) As transition layer is finished, the MOCVD reaction chamber growth temperature is adjusted to 650 ℃, and the growth pressure is adjusted to 150mbar, and a layer of highly doped P-type al0.25ga0.75as is grown on the surface of the low-doped P-type AlxGa (1-x) As transition layer by using trimethyl gallium (TMGa), trimethyl aluminum (TMAl), arsine (AsH3) As growth source, carbon tetrabromide (CBr4) As P-type doping source.
4. The method for preparing a heterojunction tunneling junction epitaxial structure according to claim 3, wherein the highly doped P-type Al0.25Ga0.75As carrier concentration is 1E20, and the thickness of the epitaxial growth layer is 10 nm.
5. The preparation method of the heterotunnel junction epitaxial structure of claim 2, wherein in S4, after the epitaxial growth of the highly doped P-type Al0.25Ga0.75As is finished, the growth temperature of the MOCVD reaction chamber is kept at 650 ℃, the growth pressure is maintained at 150mbar, trimethyl gallium (TMGa), trimethyl indium (TMIn) and phosphane (PH3) are used as growth sources, diethyl tellurium (DeTe) is used as an N-type doping source, and an N-type In0.5Ga0.5P layer is epitaxially grown on the surface of the highly doped P-type Al0.25Ga0.75As.
6. The preparation method of the heterojunction epitaxial structure of claim 5, wherein the carrier concentration of the N-type In0.5Ga0.5P layer is 1E20, and the thickness of the epitaxial growth layer is 10 nm.
7. The preparation method of the epitaxial structure of the heterojunction as claimed in claim 5, wherein in S4, when the epitaxial growth of the N-type In0.5Ga0.5P layer in the tunnel junction is finished, the growth temperature of the MOCVD reaction chamber is kept at 650 ℃, the growth pressure is kept at 150mbar, and a GaAs protective layer is epitaxially grown on the surface of the In0.5Ga0.5P layer; the epitaxial growth thickness of the GaAs protective layer is 2.5 nm.
8. The method for preparing a heterotunnel junction epitaxial structure of claim 1, wherein in S4, when the epitaxial growth of the GaAs protective layer is finished, and the growth temperature of the MOCVD reaction chamber is 700 ℃ and the growth pressure is 100mbar, the low-doped N-type al0.3ga0.7as transition layer and quantum well are sequentially stacked and epitaxially grown on the surface of the GaAs protective layer.
9. The method for preparing a heterotunnel junction epitaxial structure according to claim 1, wherein in S3, the N-type DBR layer is formed by sequentially stacking 30-40 al0.9ga0.1as/al0.05ga0.95as layers grown on the surface of the buffer layer;
in S5, the P-type DBR layer is formed by stacking 20 to 30 sets of al0.9ga0.1as/al0.05ga0.95as sequentially grown on the surface of the quantum well at the outermost layer of the resonator.
10. A high-quality heterojunction epitaxial structure obtained by the method for preparing the same according to claims 1 to 9.
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