CN104600562A - High-power laser for 808nm ceiling light field - Google Patents
High-power laser for 808nm ceiling light field Download PDFInfo
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- CN104600562A CN104600562A CN201510055185.0A CN201510055185A CN104600562A CN 104600562 A CN104600562 A CN 104600562A CN 201510055185 A CN201510055185 A CN 201510055185A CN 104600562 A CN104600562 A CN 104600562A
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Abstract
The invention discloses a high-power laser for a 808nm ceiling light field and relates to the technical field of a semiconductor laser; the high-power laser comprises a substrate, wherein a buffer layer, a lower limiting layer, a lower light-field active layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, an upper light-field active layer, an upper limiting layer and an electrode contact layer are sequentially grown on the substrate from top to bottom; the lower light-field active layer is made of a highly doped N-type AlGaAs material, and the upper light-field active layer is made of a highly doped P-type AlGaAs material. The light field top of the fast axis is uniformly distributed, so that the optical power density in the active region can be further reduced, and reliability and durability of the laser are improved.
Description
Technical field
The present invention relates to semiconductor laser field.
Background technology
808nm high power semiconductor lasers obtains in fields such as solid state laser pumping, laser processing, laser medicine, laser display and Military Application and applies more and more widely, particularly in solid state laser pump applications, little with its volume, lightweight, efficiency and high reliability gain great popularity.Within the past ten years, along with high power semiconductor lasers product is ripe further, laser clung to by various structure the linear array that bar is packaged into, the power output of folded array module can reach thousands of watts and even go up myriawatt, have very large growth in the demand in the field such as industrial processes, military affairs.
For high power semiconductor lasers, easily there is damage in the semi-conducting material in its face, chamber under high optical power density, thus destroy reflection or the transmission effect in face, chamber, causes the damage of Laser Devices, Here it is face, chamber catastrophic optical damage phenomenon.The catastrophic optical damage of face, chamber becomes the principal element that restriction semiconductor laser power output improves further.
Traditional high power laser adopts Large optical cavity structure.Adopt the epitaxial structure design increasing duct thickness, increase the spot size in epitaxial loayer direction, reduce optical power density, obtain high face, chamber catastrophic optical damage phenomenon threshold value.But fast axial light field concentrates on active area, active area optical power density is still very high, does not have essence to change laser device reliability problem.There is the defects such as operating voltage is high, electro-optical efficiency is low simultaneously.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of 808nm flat-top light field high power laser, and top, fast axial light field is evenly distributed, and can reduce active area optical power density further, improves reliability and the durability of laser.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
A kind of 808nm flat-top light field high power laser, the resilient coating comprising substrate and grow successively from bottom to up on substrate, lower limit layer, lower light field active layer, lower waveguide layer, quantum well layer, on ducting layer, glazing field action layer, upper limiting layer and contact electrode layer, described lower light field active layer adopts highly doped N-type AlGaAs material, and glazing field action layer adopts highly doped P type AlGaAs material.
Further technical scheme, the doping content of described lower light field active layer is 10
17/ cm
3~ 10
18cm
3, the doping content of glazing field action layer is 10
17/ cm
3~ 10
18cm
3.
Further technical scheme, the thickness of described lower light field active layer is 0.05 μm ~ 1 μm, and the thickness of glazing field action layer is 0.05 μm ~ 1 μm.
Further technical scheme, described lower waveguide layer adopts lightly doped P type AlGaAs material, and thickness is 0.4 μm ~ 1 μm; Described upper ducting layer adopts lightly doped N-type AlGaAs material, and thickness is 0.4 μm ~ 1 μm.
Further technical scheme, the doping content of described lower waveguide layer is not more than 10
18/ cm
3, the doping content of upper ducting layer is not more than 10
18/ cm
3.
Further technical scheme, described contact electrode layer is heavily doped P type AlGaAs material, and described contact electrode layer doping content is not less than 10
20/ cm
3.
Further technical scheme, described quantum well layer is the AlGaInAs material of undoped.
The beneficial effect adopting technique scheme to produce is: under the present invention, light field active layer and glazing field action layer all adopt highly doped AlGaAs material, achieve top, fast axial light field to be evenly distributed, compared with the high power laser of traditional employing Large optical cavity structure, further reduce active area optical power density, further increase near field of light spot size, further reduce face, chamber optical power density, further improve face, chamber catastrophic optical damage threshold, thus improve reliability and the durability of laser; By improving ohmic contact layer concentration, interface gradual change, Wave guide layer-doped, reduce additional magnitude of voltage and resistance value, the thickness wherein going up ducting layer and lower waveguide layer is 0.4 ~ 1 μm, and ducting layer is low-doped, decrease the voltage drop that charge carrier passes through all heterogeneous barrier generations, extra voltage is reduced, and ohmic contact layer concentration is greater than 10
20/ cm
3, reduce further auxiliary voltage and system resistance; Quantum well layer is AlGaInAs strained quantum well, can obtain high luminous quantum efficiency.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is conventional structure optical field distribution figure;
Fig. 3 is flat-top light field light field distribution map of the present invention;
In the accompanying drawings: 1, substrate, 2, resilient coating, 3, lower limit layer, 4, lower light field active layer, 5, lower waveguide layer, 6, quantum well layer, 7, upper ducting layer, 8, glazing field action layer, 9, upper limiting layer, 10, contact electrode layer.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation.
Embodiment 1:
As shown in Figure 1,808nm flat-top light field high power laser, comprises substrate 1, resilient coating 2, lower limit layer 3, lower light field active layer 4, lower waveguide layer 5, quantum well layer 6, upper ducting layer 7, glazing field action layer 8, upper limiting layer 9 and contact electrode layer 10.
Substrate 1, for carrying out the epitaxial growth of semiconductor laser layers of material thereon, in the present invention, substrate 1 is the N-type GaAs in (100) face, can be conducive to the injection of electronics like this, reduces the series resistance of substrate 1 material.
Resilient coating 2 makes on substrate 1, is N-type GaAs material, its objective is and forms high-quality epitaxial surface, reduces the stress of substrate 1 and other each layer, and the defect eliminating substrate 1, to the propagation of other each layer, is beneficial to the growth of other layers of material of device.
Lower limit layer 3 makes on the buffer layer 2, for highly doped N-type AlGaAs, its objective is the expansion of restriction light field transverse mode to resilient coating 2 and substrate 1, reducing the loss of light, is also the diffusion of limiting carrier, reduces hole leakage current, to reduce the threshold current of device, reduce potential barrier simultaneously, reduce voltage loss, raise the efficiency.
Lower light field active layer 4 is produced on lower limit layer 3, is highly doped N-type AlGaAs, its objective is the optical field distribution controlled in waveguide, forms flat-top light field.The thickness of lower light field active layer 4 is 0.05 μm ~ 1 μm, and doping content is 10
17/ cm
3-10
18/ cm
3.
Lower waveguide layer 5 is produced on lower light field active layer 4, and be lightly doped N-type AlGaAs, doping content is not more than 10
18/ cm
3thickness is 0.4 μm ~ 1 μm, its objective is the restriction strengthened light field, reduce the far-field divergence angle of light beam, improve the beam quality of device, reduce face, chamber optical power density simultaneously, light dope is adopted to be to reduce the absorption loss of this layer to light, make can diminish on rank between quantum well layer 6 and lower waveguide layer 5 potential barrier, the bending amplitude of Fermi level diminishes, and reduction falls in extra voltage simultaneously.
Quantum well layer 6 is produced on lower waveguide layer 5, is the Al-Ga-In-As material of undoped, and its effect is the active area as laser, provides enough gains of light, and determines the excitation wavelength of device and the useful life of device.
Upper ducting layer 7 is produced on quantum well layer 6, and be lightly doped P type AlGaAs, doping content is not more than 10
18/ cm
3thickness is 0.4 μm ~ 1 μm, the restriction to light field is strengthened in the effect of upper ducting layer 7, reduce the far-field divergence angle of light beam, improving the beam quality of device, adopting light dope to be to reduce upper ducting layer 7 to the absorption loss of light, make can diminish on rank between quantum well layer 6 and upper ducting layer 7 potential barrier simultaneously, the bending amplitude of Fermi level diminishes, and reduction falls in extra voltage.
Glazing field action layer 8 is produced on ducting layer 7, is highly doped P type AlGaAs, its objective is the optical field distribution controlled in waveguide, forms flat-top light field.The thickness of glazing field action layer 8 is 0.05 μm ~ 1 μm, and doping content is 10
17/ cm
3-10
18/ cm
3.Lower light field active layer 4 has higher refractive index with glazing field action layer 8 compared with other each layers.
Upper limiting layer 9 is produced on glazing field action layer 8, for highly doped P type AlGaAs, its advantage is the increase in the band rank of ducting layer 7 and upper limiting layer 9, can effectively hinder electronics to the diffusion of upper limiting layer 9 and drift, thus reduce the leakage current of electronics, to reduce the threshold current of device, improve injection efficiency, and restriction light field transverse mode is to the expansion of this upper limiting layer 9, reduce the loss of light, also be reduce potential barrier, reduce voltage loss, raise the efficiency.
Contact electrode layer 10 is produced on upper limiting layer 9, and be heavily doped P p type gallium arensidep material, concentration is greater than 10
20/ cm
3, its objective is and realize good ohmic contact, adopting heavy doping to be to reduce series resistance, improve the conversion efficiency of device.
As shown in Figure 2, for the optical field distribution figure under conventional structure, Fig. 3 is optical field distribution figure of the present invention, wherein, C1 is the curve of light distribution, C2 is refractive index distribution curve, as shown in Figure 3, adopt highly doped AlGaAs material, reduce refractive index, thus define flat-top light field, achieve top, fast axial light field to be evenly distributed, compared with the high power laser of traditional employing Large optical cavity structure, further reduce active area optical power density, further increase near field of light spot size, further reduce face, chamber optical power density, further improve face, chamber catastrophic optical damage threshold, thus improve reliability and the durability of laser.
Claims (7)
1. a 808nm flat-top light field high power laser, the resilient coating (2) comprising substrate (1) and grow successively from bottom to up on substrate (1), lower limit layer (3), lower light field active layer (4), lower waveguide layer (5), quantum well layer (6), upper ducting layer (7), glazing field action layer (8), upper limiting layer (9) and contact electrode layer (10), it is characterized in that described lower light field active layer (4) adopts highly doped N-type AlGaAs material, glazing field action layer (8) adopts highly doped P type AlGaAs material.
2. 808nm flat-top light field high power laser according to claim 1, is characterized in that the doping content of described lower light field active layer (4) is 10
17/ cm
3~ 10
18cm
3, the doping content of glazing field action layer (8) is 10
17/ cm
3~ 10
18cm
3.
3. 808nm flat-top light field high power laser according to claim 1, it is characterized in that the thickness of described lower light field active layer (4) is 0.05 μm ~ 1 μm, the thickness of glazing field action layer (8) is 0.05 μm ~ 1 μm.
4. 808nm flat-top light field high power laser according to claim 1, it is characterized in that described lower waveguide layer (5) adopts lightly doped P type AlGaAs material, thickness is 0.4 μm ~ 1 μm; Described upper ducting layer (7) adopts lightly doped N-type AlGaAs material, and thickness is 0.4 μm ~ 1 μm.
5. 808nm flat-top light field high power laser according to claim 4, is characterized in that the doping content of described lower waveguide layer (5) is not more than 10
18/ cm
3, the doping content of upper ducting layer (7) is not more than 10
18/ cm
3.
6. 808nm flat-top light field high power laser according to claim 1, it is characterized in that described contact electrode layer (10) is for heavily doped P type AlGaAs material, the doping content of described contact electrode layer (10) is not less than 10
20/ cm
3.
7. 808nm flat-top light field high power laser according to claim 1, is characterized in that the AlGaInAs material that described quantum well layer (6) is undoped.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106532433A (en) * | 2016-12-30 | 2017-03-22 | 苏州全磊光电有限公司 | Laser with far-field divergence angle in narrow vertical direction and fabrication method of laser |
| CN112563376A (en) * | 2020-12-11 | 2021-03-26 | 西安立芯光电科技有限公司 | Diode epitaxial structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040047379A1 (en) * | 2002-05-29 | 2004-03-11 | Tomoyuki Kitamura | Semiconductor laser device |
| CN1901301A (en) * | 2005-07-21 | 2007-01-24 | 中国科学院半导体研究所 | High injection efficiency high power 808 nm quantum trap semiconductor laser structure |
| CN101159366A (en) * | 2007-09-12 | 2008-04-09 | 长春理工大学 | Inverse wave-guide large optical cavity semiconductor laser device |
| CN101809834A (en) * | 2007-09-24 | 2010-08-18 | 奥斯兰姆奥普托半导体有限责任公司 | Method for producing a radiation-emitting component and radiation-emitting component |
| CN204361476U (en) * | 2015-02-03 | 2015-05-27 | 中国电子科技集团公司第十三研究所 | 808nm flat-top light field high power laser |
-
2015
- 2015-02-03 CN CN201510055185.0A patent/CN104600562B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040047379A1 (en) * | 2002-05-29 | 2004-03-11 | Tomoyuki Kitamura | Semiconductor laser device |
| CN1901301A (en) * | 2005-07-21 | 2007-01-24 | 中国科学院半导体研究所 | High injection efficiency high power 808 nm quantum trap semiconductor laser structure |
| CN101159366A (en) * | 2007-09-12 | 2008-04-09 | 长春理工大学 | Inverse wave-guide large optical cavity semiconductor laser device |
| CN101809834A (en) * | 2007-09-24 | 2010-08-18 | 奥斯兰姆奥普托半导体有限责任公司 | Method for producing a radiation-emitting component and radiation-emitting component |
| CN204361476U (en) * | 2015-02-03 | 2015-05-27 | 中国电子科技集团公司第十三研究所 | 808nm flat-top light field high power laser |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106532433A (en) * | 2016-12-30 | 2017-03-22 | 苏州全磊光电有限公司 | Laser with far-field divergence angle in narrow vertical direction and fabrication method of laser |
| CN112563376A (en) * | 2020-12-11 | 2021-03-26 | 西安立芯光电科技有限公司 | Diode epitaxial structure |
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| CN104600562B (en) | 2017-08-29 |
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