CN102324696B - Bragg refractive waveguide edge transmitting semiconductor laser with low horizontal divergence angle - Google Patents
Bragg refractive waveguide edge transmitting semiconductor laser with low horizontal divergence angle Download PDFInfo
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Abstract
The invention relates to a Bragg refractive waveguide edge transmitting semiconductor laser with a low horizontal divergence angle, wherein the P electrode of the laser is placed on the top face of a cover layer and is electrically connected onto the cover layer; the N electrode is positioned on the back face of a substrate and is electrically connected to the substrate; a center cavity is positioned between an upper waveguide layer and a lower waveguide layer; an active area is inserted in the center cavity; a Bragg refractive waveguide formed by periodically distributing a plurality of layers of N-doped materials with a high refractive index and a low refractive index is adopted in the lower waveguide layer on; and a Bragg refractive waveguide formed by periodically distributing a plurality of layers of P-doped materials with a high refractive index and a low refractive index is adopted in the upper waveguide layer. The Bragg refractive waveguide edge transmitting semiconductor laser with the low horizontal divergence angle has the advantages that: effects such as catastrophic damage, hole burning, electric heat overburning, beam filamentization and the like on the end face of the traditional edge transmitting semiconductor laser can be effectively improved, and the laser can realize the large mode-volume and stable single-transverse-mode work because of the great gain loss difference between a basic mode and a high-order mode, the full wave at half maximum (FWHM) of the transverse far-field divergence angle of the laser can reach below 10 DEG.
Description
Technical field:
The invention belongs to semiconductor laser field, relate to a kind of Bragg reflection waveguide edge-emission semiconductor laser of low cross laser beam divergent angle.
Background technology:
High-power semiconductor laser has extremely important application on Materialbearbeitung mit Laserlicht, pumping, medical treatment, sensing, Display Technique, frequency inverted, space communication and national defence; Along with the performance requirement of the expansion noise spectra of semiconductor lasers of application is also increasingly high, like high power output, stable unimodular property, low far-field divergence angle, high beam quality etc.
Traditional semiconductor laser structure comprises N face electrode, substrate, resilient coating, lower limit layer, lower waveguide layer, active area from the bottom to top successively, goes up ducting layer, upper limiting layer, cap rock and p side electrode; P side electrode is placed on the end face of cap rock, and is electrically connected to cap rock, and N face electrode is positioned at the back side of substrate, and is electrically connected to substrate; Active area is between lower waveguide layer and last ducting layer.Because conventional semiconductor laser is laterally adopting high index waveguide to carry out guided wave through total reflection principle; Laser cavity is less, and when it faces a following basic difficult problem during in high-power operation: the breaking-up of end face catastrophe property, hole burning, electric heating burn, light beam becomes silk and beam quality difference etc.In addition; The chamber face is owing to self-diffraction, and laterally (epitaxial growth direction) beam divergence angle is very high, and full width at half maximum (FWHM) is usually between 18 °-40 °; Output beam is oval the distribution; Produce very big astigmatism, therefore must adopt complicated optical system, and its maximum focuses on power density and optical coupling efficiency also is restricted.
The optical mode volume of increase laser helps overcoming above-mentioned restriction with sharp the penetrating of maintenance stable single lateral mode, and expansion light transverse mode volume can improve power output, reduce the risk that light beam one-tenth silk is dispersed and reduced to lateral beam.On the conventional semiconductor laser architecture basics, there is the method for a large amount of expansion waveguides to propose increasing the optical mode volume, limits structures such as heterojunction respectively like large-optical-cavity or super large optical cavity structure, asymmetrical wave guide structure, low-refraction barrier structure, integrating passive waveguide, low-refraction cladding structure, double potential barrier.These methods can increase the optical mode volume to a certain extent, and lateral divergence angle halfwidth is reduced to tens degree.But because these laser structure optical mode volumes are big more; The problem that faces multimode operation is serious more; This can make the far field pattern complicated; Laser beam quality descends greatly, and therefore laterally far-field divergence angle (full width at half maximum FWHM) can only reach about tens degree, is difficult to obtain narrower horizontal far-field divergence angle.In addition; The minimum refraction index changing that these lasers depart from the epitaxial growth structural constituent or variations in temperature causes is very sensitive; Unstable properties such as the power of laser, efficient, pattern, therefore harsh to epitaxial growth, preparation technology and operating current and temperature requirement.
Because conventional laser expansion optical mode volume method contradicts with index guide structure waveguide single mode operation condition, the problem of avoiding many module lasings and obtaining the large model volume simultaneously still exists, so need fundamentally address this problem.
Summary of the invention
The technical problem that the present invention will solve provides a kind of low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser of realizing the stable single lateral mode work of big optical mode volume.
In order to solve the problems of the technologies described above, low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser of the present invention is followed successively by N face electrode, substrate, resilient coating, lower limit layer, lower waveguide layer, center cavity from the bottom to top, goes up ducting layer, upper limiting layer, P cap rock and p side electrode; P side electrode is placed on the end face of cap rock, and is electrically connected to cap rock, and N face electrode is positioned at the back side of substrate, and is electrically connected to substrate; Center cavity is between lower waveguide layer and last ducting layer, and active area is inserted in the center cavity; Said lower waveguide layer adopts the Bragg reflection waveguide of the high and low refractive index material period profile of multilayer N type doping; Last ducting layer adopts the Bragg reflection waveguide of the high and low refractive index material period profile of multilayer P type doping.
The Bragg reflection waveguide is adopted in the waveguide of semiconductor laser N face of the present invention (N type doped portion) and P face (P type doped portion) simultaneously; It is a multilayer high and low refractive index period profile structure (1-D photon crystal); Its leaded light wave mode is different from traditional total reflection pattern, and it utilizes Bragg reflection to limit optical field distribution.Therefore the main feature of this laser is that the lateral light mode volume can significantly be expanded, and can effectively improve the breaking-up of end face catastrophe property, hole burning, electric heating burns with light beam becomes effect such as silk.Making through design Bragg reflection waveguide and center cavity only has a mode confinement in center cavity; Electric field strength decays during away from center cavity; And at the high refracting layer of Bragg reflection waveguide the local peak appears; And all high-rder modes expand in the whole wave guide; Therefore the light restriction factor of basic mode is much larger than high-rder mode, and the relative basic mode of high-rder mode mould has very large leakage losses, and big gain loss difference makes this laser can realize large model volume, stable single lateral mode work between basic mode and the high-rder mode.Because far-field divergence angle is inversely proportional to mode volume, therefore this structure lateral beam disperse can be very little (full width at half maximum FWHM＜10 °), this helps improving optical coupling efficiency and the complexity that reduces the laser application optical system.
Described Bragg reflection waveguide is a height refractive index cycle property modulated structure, forms 1-D photon crystal.When light transmitted in the photonic crystal in unlimited cycle, transmission had Allowed band and forbidden band, when transmission is positioned at the forbidden band, and the light field decay, transmission is under an embargo, so the Bragg reflection waveguide can be used for limiting optical field distribution.Because light field is rapid in preceding several periodic attenuations, therefore only need the limit cycle logarithm to get final product.
Because N face and P face all adopt the Bragg reflection waveguide, optical mode is expanded to both sides, therefore only needs less epitaxy layer thickness can obtain big mode volume.The P face mixes and the employing unsymmetric structure reduces P face resistance and loss through optimizing, and also can obtain high conversion rate.In addition; Adopt two-sided Bragg reflection waveguide, center cavity can adopt low-index material, more helps the expansion of optical mode volume; Under the condition that does not increase epitaxy layer thickness, can obtain littler far-field divergence angle, and the modal gain loss difference between basic mode and the high-rder mode can be bigger.
Said center cavity is the photonic crystal defect layer, and active area is positioned at the photonic crystal defect layer.
The refractive index of said photonic crystal defect layer can be identical with low-index layer refractive index in lower waveguide layer or the last ducting layer, and thickness is greater than lower waveguide layer or go up the low-refraction layer thickness in the single cycle in the ducting layer.
The refractive index of said photonic crystal defect layer can be identical with high refractive index layer refractive index in lower waveguide layer or the last ducting layer, and thickness is greater than lower waveguide layer or go up the high index of refraction layer thickness in the single cycle in the ducting layer.
The thickness of said photonic crystal defect layer can be identical with the low-index layer in the single cycle in lower waveguide layer or the last ducting layer, but refractive index is greater than the low-index layer in lower waveguide layer or the last ducting layer.
Said photonic crystal defect layer thickness can be identical with the high refractive index layer in the single cycle in lower waveguide layer or the last ducting layer, but refractive index is greater than the high refractive index layer in lower waveguide layer or the last ducting layer.
Described photonic crystal defect layer thickness and refractive index all can or go up the low-index layer in the ducting layer greater than lower waveguide layer.
Described photonic crystal defect layer thickness and refractive index all can or go up the high refractive index layer in the ducting layer greater than lower waveguide layer.
Said active area is individual layer SQW (QWs), multi layer quantum well (QWs), quantum dot (QDs) or quantum wire, is inserted in the defect layer at correct position.
As further improvement of the present invention be: the lower waveguide layer of center cavity both sides and/or in the ducting layer place, the strong peak position of high refractive index layer optical field distribution at least one cycle be inserted with the source region.Because the active area that inserts as thin as a wafer, little to the optical field distribution influence, the recombination luminescence district is formed in a plurality of luminous zones, increases power output.
The said periodicity of going up Bragg reflection waveguide in the ducting layer can make light field to the skew of N type doped region less than the periodicity of Bragg reflection waveguide in the lower waveguide layer, reduces the resistance and the absorption loss of P face, improves conversion efficiency.
The said refraction index profile that goes up Bragg reflection waveguide in the ducting layer can be different with the refraction index profile of Bragg reflection waveguide in the lower waveguide layer, and basic mode lateral transport constant is positioned at the overlapping band gap place of two waveguides, and enhancement mode is selected.
Advantage of the present invention:
Because the semiconductor laser that the present invention proposes is laterally adopting Bragg reflection structural limitations optical mode, it has the big advantage of gain loss difference between basic mode and the high-rder mode, can realize very big optical mode volume and stable single transverse mode work.This laser catastrophe light injury threshold power is very high, under chamber not passivation of face condition, also can realize very high-power laser output; The lateral divergence angle of laser very little (full width at half maximum FWHM＜10 °); Output beam is approximately round hot spot; Therefore traditional relatively edge-emission semiconductor laser need carry out the fast and slow axis situation of collimation respectively; It can only adopt a common spherical mirror collimation to get final product, and therefore can reduce the complexity and the cost of laser application optical system greatly; Laser still can keep stable single transverse mode work when high-power operation, beam quality is very high, is beneficial to beam shaping or other direct application; Can introduce the multiple-active-region structure and form the recombination luminescence district, further increase laser output power; N face and P face Bragg reflection waveguide can be adopted symmetrical structure or unsymmetric structure, and the laser structure design flexibility increases, and help improving lasing mode and stablize performances such as reaching electro-optical efficiency.In a word, this Bragg reflection waveguide semiconductor laser have lateral beam disperse ultra narrow, power output is high, mode stability good, the beam quality advantages of higher, has good application prospects in the high brightness semiconductor laser application.
Description of drawings:
Below in conjunction with accompanying drawing and embodiment the present invention is done further explain.
Fig. 1 is a low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser structural representation of the present invention.
Fig. 2 is the refraction index profile sketch map of each layer of low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser.
Fig. 3 (a), 3 (b), 3 (c) are respectively refraction index profile, fundamental transverse mode near field and the far-field distribution sketch map of the laser of embodiment 1.
Be respectively refraction index profile, fundamental transverse mode near field and the far-field distribution sketch map of the laser of embodiment 2 like Fig. 4 (a), 4 (b), 4 (c).
Fig. 5 is the refraction index profile sketch map of 3 one kinds of asymmetric each layers of Bragg reflection waveguide semiconductor laser of embodiment.
Fig. 6 is the refraction index profile sketch map of the low cross angle of divergence Bragg reflection waveguide laser of 4 one kinds of symmetrical multiple-active-regions of embodiment.
Fig. 7 is the refraction index profile sketch map of the low cross angle of divergence Bragg reflection waveguide laser of 5 one kinds of asymmetric multiple-active-regions of embodiment.
Fig. 8 is the refraction index profile sketch map of the low cross angle of divergence Bragg reflection waveguide laser of 6 one kinds of asymmetric multiple-active-regions of embodiment.
Fig. 9 is the refraction index profile sketch map of the low cross angle of divergence Bragg reflection waveguide laser of 7 one kinds of asymmetric multiple-active-regions of embodiment.
Figure 10 is the refraction index profile sketch map of the low cross angle of divergence Bragg reflection waveguide laser of 8 one kinds of asymmetric multiple-active-regions of embodiment.
Embodiment:
As shown in Figure 1, low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser of the present invention is followed successively by N face electrode 10, substrate 1, resilient coating 2, lower limit layer 3, lower waveguide layer 4, center cavity 5 from the bottom to top, goes up ducting layer 6, upper limiting layer 7, cap rock 8 and p side electrode 9; P side electrode 9 is placed on the end face of cap rock 8, and is electrically connected to cap rock 8, and N face electrode 10 is positioned at the back side of substrate 1, and is electrically connected to substrate 1; Center cavity 5 is between lower waveguide layer 4 and last ducting layer 6; Said lower waveguide layer 4 adopts the Bragg reflection waveguide of multilayer N type doping high and low refractive index material period profile; Last ducting layer 6 adopts the Bragg reflection waveguide of multilayer P type doping high and low refractive index material period profile.
As shown in Figure 2, be low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser refractive index profile of the present invention.Lower waveguide layer 4 is made up of the high and low refractive index layer periodic arrangement that the N type mixes, and each cycle comprises a high refractive index layer 4b, a low-index layer 4a and transition graded bedding, and the thickness in each cycle is T
N Last ducting layer 6 is made up of the high and low refractive index layer periodic arrangement that the P type mixes, and each cycle comprises a high refractive index layer 6a, a low-index layer 6b and transition graded bedding, and the thickness in each cycle is T
PT
NWith T
PCan equate or unequal that the high-index material of the high-index material of lower waveguide layer 4 and last ducting layer 6 can be the same or different; The low-index material of the low-index material of lower waveguide layer 4 and last ducting layer 6 can be the same or different; Lower waveguide layer 4 can be the same or different with the high and low refractive index layer thickness of last ducting layer 6; Center cavity 5 is the photonic crystal defect layer between lower waveguide layer 4 and last ducting layer 6.The photonic crystal defect layer is between lower waveguide layer 4 and last ducting layer 6, and it can be refractive index and T
NAnd T
PIn the identical but thickness of low-index layer greater than the layer of low-index layer in the primitive period, also can be thickness and T
NAnd T
PIn the identical but refractive index of low-index layer greater than the layer of low-index layer in the primitive period, also can be refractive index and T
NAnd T
PIn the identical but thickness of high refractive index layer greater than the layer of high refractive index layer in the primitive period, also can be thickness and T
NAnd T
PIn the identical but refractive index of high refractive index layer greater than the layer of high refractive index layer in the primitive period, active area 5a is inserted in the photonic crystal defect layer.
Substrate 1 can be the highly doped III-V compounds of group any commonly used of N type, such as GaAs, and InP, GaSb etc. are used for epitaxial growth laser layers of material above that.Because epitaxial film materials needs and substrate lattice coupling or approximate match, so the selection of substrate depends on the excitation wavelength of design, and the present invention mainly adopts the highly doped GaAs substrate of N type.
Upper limiting layer 7 is grown on the ducting layer 6, and the material lattice constant should be identical with substrate or very approaching, and band gap width is greater than the active layer band gap width, the doping acceptor impurity.Adopt in the present invention under the situation of GaAs substrate, upper limiting layer is selected high aluminium component AlGaAs material, its objective is that restriction light field transverse mode to heavy doping cap rock and metal electrode layer expansion, reduces optical loss.
Cap rock 8 is grown on the upper limiting layer 7, selects and the substrate identical materials usually, and the heavy doping acceptor impurity is beneficial to ohmic contact.Adopt in the present invention under the situation of GaAs substrate, cap rock is selected the heavily doped GaAs material of P type.
Metal electrode is stacked gradually by multiple layer metal and processes, and p side electrode 9 adopts titanium-platinum-Jin (Ti-Pt-Au) material usually, and N face electrode 10 adopts gold-germanium-nickel (Au-Ge-Ni) material.P side electrode 9 is placed on the end face of cap rock 8, and is electrically connected to cap rock.N lateral electrode 10 is positioned at the back side of substrate 1, and is electrically connected on the substrate.
Embodiment 1:
Shown in Fig. 3 (a), 3 (b), 3 (c), be a kind of refraction index profile, fundamental transverse mode near field and far-field distribution sketch map of low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser (wavelength is 980nm) of symmetry.Its N face and P ground roll are led and are all adopted 6 couples of Al
0.1Ga
0.9As/Al
0.3Ga
0.7The As periodic waveguide, the high and low refractive index layer of lower waveguide layer 4 is arranged cycle T
NArrange cycle T with the high and low refractive index layer of last ducting layer 6
PEquate that last ducting layer 6 is identical respectively with the material and the thickness of the high and low refractive index layer of lower waveguide layer in 4 each cycle.Active area is positioned at center cavity central authorities, adopts In
0.2Ga
0.8As/GaAs double quantum well (QWs).The basic mode near field distribution can be found out from Fig. 3 (b), and laser optical transverse mode size increases greatly among the present invention, from Fig. 3 (c), can find out, laterally far-field divergence angle θ
⊥Very low (full width at half maximum FWHM is merely 5.4 °).
Embodiment 2:
Shown in Fig. 4 (a), 4 (b), 4 (c); Be refraction index profile, fundamental transverse mode near field and the far-field distribution sketch map of a kind of asymmetrical low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser (wavelength is 980nm), its N face and P ground roll are led and are adopted 8 couples and 4 couples of Al respectively
0.1Ga
0.9As/Al
0.3Ga
0.7The As periodic waveguide; Lower waveguide layer 4 is identical with high and low refractive index layer material and the thickness of last ducting layer in 6 each cycle, and the cycle logarithm of just going up ducting layer 6 is less than lower waveguide layer 4.Active area adopts In
0.2Ga
0.8As/GaAs double quantum well (QWs).Among the figure, 4 (a) are refraction index profile, and 4 (b) and 4 (c) are respectively horizontal near field distribution of fundamental transverse mode and far-field distribution.Can find out that from Fig. 4 (b) last ducting layer 6 Bragg reflection waveguides are different with lower waveguide layer 4 Bragg reflection waveguide cycle logarithms, reduce the P face thickness; Light field is squinted to the N face; Because P face hole mobility is much smaller than electronics, and the charge carrier absorption loss in hole can reduce absorption loss and device resistance like this greater than electronics; Improve electro-optical efficiency, also can obtain low-down horizontal far-field divergence angle (full width at half maximum FWHM is merely 7.2 °) simultaneously.
Embodiment 3:
As shown in Figure 5; Refraction index profile sketch map for a kind of asymmetrical low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser; High refractive index layer 4b in its lower waveguide layer 4 and the high refractive index layer 6a in the last ducting layer 6, the low-index layer 4a in the lower waveguide layer 4 and material and thickness between the low-index layer 6b in the last ducting layer 6 are incomplete same, the cycle logarithm in two ducting layers can be identical also can be inequality.Center cavity 5 is two kinds of defect layers that photonic crystal is common between lower waveguide layer 4 and last ducting layer 6, its refractive index and thickness and following waveguide 4 and to go up in 6 cycles of waveguide arbitrary layer all incomplete same.The design defect layer makes the lateral transport constant be positioned at two kinds of photonic crystal band overlapping regions, and light field is limited in the center cavity, and this structure also has the function that certain wavelength is selected.
Embodiment 4:
Fig. 6 is a kind of refraction index profile sketch map of low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser of symmetrical multiple-active-region.Except the active area at center light field distribution peak value place, its N face and place, P face light field local peak also insert the gain media of identical logarithm, form the recombination luminescence district, thereby improve the light restriction factor and further increase power output.Numeral among the figure: 1 substrate, 2 resilient coatings, 3 lower limit layers, 4 lower waveguide layers, 5 are compounded with ducting layer on the source region, 6,7 upper limiting layers, 8 cap rocks, 9P face electrode and 10N face electrode and constitute; 11 represent N type doped portion; 12 represent P type doped portion; 5a is a center light field distribution peak value place active area; The active area that on behalf of place, P type doped portion optical field distribution local peak, the active area that on behalf of place, N type doped portion optical field distribution local peak, 5b insert, 5c insert, wherein N type part is identical with the gain media logarithm that the P type partly inserts.
Embodiment 5:
Fig. 7 is a kind of refraction index profile sketch map of low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser of asymmetric multiple-active-region; Except the active area at center light field distribution peak value place, the gain media quantity that the gain media quantity that its N face inserts is inserted more than the P face.Numeral among the figure: 1 substrate, 2 resilient coatings, 3 lower limit layers, 4 lower waveguide layers, 5 are compounded with lower waveguide layer on the source region, 6,7 upper limiting layers, 8 cap rocks, 9P face electrode and 10N face electrode and constitute; 11 represent N type doped portion; 12 represent P type doped portion; 5a is a center light field distribution peak value place active area, the active area that on behalf of place, P type doped portion optical field distribution local peak, the active area that on behalf of place, N type doped portion optical field distribution local peak, 5b and 5c insert, 5d insert.
Embodiment 6:
Fig. 8 is a kind of refraction index profile sketch map of low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser of asymmetric multiple-active-region; Except the active area at center light field distribution peak value place, the gain media number that the gain media quantity that its P face inserts is inserted more than the N face.Numeral among the figure: 1 substrate, 2 resilient coatings, 3 lower limit layers, 4 lower waveguide layers, 5 are compounded with ducting layer on the source region, 6,7 upper limiting layers, 8 cap rocks, 9P face electrode and 10N face electrode and constitute; 11 represent N type doped portion; 12 represent P type doped portion; 5a is a center light field distribution peak value place active area, the active area that on behalf of place, P type doped portion optical field distribution local peak, the active area that on behalf of place, N type doped portion optical field distribution local peak, 5b insert, 5c and 5d insert.
Embodiment 7:
Fig. 9 is a kind of refraction index profile sketch map of low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser of asymmetric multiple-active-region; Except the active area at center light field distribution peak value place, also insert gain media at its place, N face optical field distribution local peak.Numeral among the figure: 1 substrate, 2 resilient coatings, 3 lower limit layers, 4 lower waveguide layers, 5 are compounded with ducting layer on the source region, 6,7 upper limiting layers, 8 cap rocks, 9P face electrode and 10N face electrode and constitute; 11 represent N type doped portion; 12 represent P type doped portion; 5a is a center light field distribution peak value place active area, the gain media that on behalf of place, N type doped portion optical field distribution local peak, 5b insert.
Embodiment 8:
Figure 10 is a kind of refraction index profile sketch map of low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser of asymmetric multiple-active-region; Except the active area at center light field distribution peak value place, its P face optical field distribution local peak position place inserts gain media.Numeral among the figure: 1 substrate, 2 resilient coatings, 3 lower limit layers, 4 lower waveguide layers, 5 are compounded with ducting layer on the source region, 6,7 upper limiting layers, 8 cap rocks, 9P face electrode and 10N face electrode and constitute; 11 represent N type doped portion; 12 represent P type doped portion; 5a is a center light field distribution peak value place active area, the active area that on behalf of place, P type doped portion optical field distribution local peak, 5b insert.
The objective of the invention is to a kind of new Waveguide Mechanism is incorporated in the structure of semiconductor laser; The Bragg reflection waveguide is adopted in N face (N type doped portion) and P face (P type doped portion) waveguide simultaneously; It is a multilayer height refractive index cycle distributed architecture (1-D photon crystal); Its leaded light wave mode is different from traditional total reflection pattern, and it utilizes Bragg reflection to limit the optical mode distribution.Lead-in defective in photonic crystal (destroying the layer of 1-D photon crystal periodic distribution); The design waveguide makes has only basic mode to be limited in the defect layer; And all high-rder modes expand in the whole wave guide, and the light restriction factor of basic mode is much larger than high-rder mode like this, and the relative basic mode of high-rder mode mould has very large leakage losses; Therefore the gain loss difference is very big between this tactic pattern, therefore can realize the very stable single lateral mode work of large model volume.Big mode volume can effectively be improved the breaking-up of end face catastrophe property, hole burning, electric heating burns with light beam becomes effect such as silk, and gain loss difference makes that this laser can the single transverse mode work of stable high power between simultaneously big pattern.Because far-field divergence angle is inversely proportional to mode volume, therefore this structure lateral beam disperse can be very little (full width at half maximum FWHM＜10 °), this helps reducing the complexity and the cost of laser application optical system.The optical field distribution of this structure has a lot of locals peak in addition, can insert a plurality of gain medias at the peak value place, forms the recombination luminescence district, increases the light restriction factor and improves power output.Can also adopt unsymmetric structure, improve electro-optical efficiency and enhancement mode and select.
Claims (7)
1. a low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser is followed successively by N face electrode (10), substrate (1), resilient coating (2), lower limit layer (3), lower waveguide layer (4), center cavity (5) from the bottom to top, goes up ducting layer (6), upper limiting layer (7), P cap rock (8) and p side electrode (9); P side electrode (9) is placed on the end face of cap rock (8), and is electrically connected to cap rock (8), and N face electrode (10) is positioned at the back side of substrate (1), and is electrically connected to substrate (1); Center cavity (5) is positioned between lower waveguide layer (4) and the last ducting layer (6), and active area (5a) is inserted in the center cavity (5); It is characterized in that said lower waveguide layer (4) adopts the Bragg reflection waveguide of the high and low refractive index material period profile of multilayer N type doping; Last ducting layer (6) adopts the Bragg reflection waveguide of the high and low refractive index material period profile of multilayer P type doping.
2. low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser according to claim 1 is characterized in that said center cavity (5) is the photonic crystal defect layer, and active area (5a) is positioned at the photonic crystal defect layer.
3. low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser according to claim 2 is characterized in that said active area (5a) is individual layer SQW, multi layer quantum well, quantum dot or quantum wire.
4. low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser according to claim 2 is characterized in that near the center cavity that optical field distribution local peak position is inserted with the source region in several Bragg reflection waveguide cycles to form the recombination luminescence district.
5. low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser according to claim 1 is characterized in that the said periodicity of going up the periodicity of Bragg reflection waveguide in the ducting layer (6) less than Bragg reflection waveguide in the lower waveguide layer (4).
6. low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser according to claim 1; The refraction index profile that it is characterized in that Bragg reflection waveguide in the said upward ducting layer (6) is different with the refraction index profile of Bragg reflection waveguide in the lower waveguide layer (4), and basic mode lateral transport constant is positioned at the overlapping band gap place of two waveguides.
7. low cross angle of divergence Bragg reflection waveguide edge-emission semiconductor laser according to claim 1; It is characterized in that said substrate (1) adopts the highly doped GaAs of N type; Resilient coating (2) is selected the highly doped GaAs of N type; Lower limit layer (3) is selected the highly doped high aluminium component AlGaAs material of N type, and the high refractive index layer (4b) of lower waveguide layer (4) and low-index layer (4a) are selected the AlGaAs material of different aluminum component, and the high refractive index layer of last ducting layer (6) and low-index layer are selected the AlGaAs material of different aluminum component; Upper limiting layer (7) is selected high aluminium component AlGaAs material, and cap rock (8) is selected P type heavy doping GaAs material.
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| CN102611002B (en) * | 2012-03-23 | 2013-11-27 | 中国科学院长春光学精密机械与物理研究所 | Low divergence angle full Bragg reflector waveguide semiconductor laser array |
| CN102709810B (en) * | 2012-05-25 | 2014-04-16 | 中国科学院长春光学精密机械与物理研究所 | Bragg reflection waveguide double-beam laser and application method thereof |
| CN103117512A (en) * | 2012-12-04 | 2013-05-22 | 北京工业大学 | Semiconductor laser chip structure with wavelength choice layer |
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| CN104409965A (en) * | 2014-07-18 | 2015-03-11 | 中国科学院长春光学精密机械与物理研究所 | A Bragg reflection waveguide GaSb base semiconductor laser |
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| US6813297B2 (en) * | 2002-07-16 | 2004-11-02 | Agilent Technologies, Inc. | Material systems for long wavelength lasers grown on GaSb or InAs substrates |
| JP4599836B2 (en) * | 2003-12-22 | 2010-12-15 | ソニー株式会社 | Semiconductor laser element |
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