CN109599743B - Conical photonic crystal laser based on photonic crystal defect state mode control - Google Patents
Conical photonic crystal laser based on photonic crystal defect state mode control Download PDFInfo
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- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
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Abstract
The invention discloses a conical photonic crystal laser based on photonic crystal defect mode control, which comprises: an epitaxial layer structure, the epitaxial layer structure comprising: an N-type substrate; the N-type limiting layer is positioned on the N-type substrate; the perfect one-dimensional photonic crystal is positioned on the N-type limiting layer; the active region is positioned on the perfect one-dimensional photonic crystal; a P-type confinement layer located over the active region; the P-type contact layer is positioned on the P-type limiting layer; and a tapered structure disposed on a P-side of the epitaxial layer, the tapered structure comprising: a ridge waveguide portion; and a tapered waveguide portion connected to the ridge waveguide portion to realize gain; the perfect one-dimensional photonic crystal also comprises a defect layer which destroys the periodicity of the perfect one-dimensional photonic crystal, and the active region is positioned in the defect layer. The laser can improve the beam quality of a semiconductor laser, improve the output power, reduce the divergence angle in the vertical direction and realize stable vertical mode output.
Description
Technical Field
The disclosure belongs to the field of semiconductor lasers, and relates to a conical photonic crystal laser based on photonic crystal defect mode control.
Background
The semiconductor laser has many advantages of light weight, small volume, convenient integration and the like, and can realize high-power and high-efficiency output. At present, semiconductor lasers are applied to various fields such as material processing, communication, military, medical treatment and the like. However, in these applications, including as pump sources for solid state and fiber lasers, laser scalpels, laser weapons, metal cutting welds, laser displays, etc., there are high demands on the brightness of the lasers. The realization of high brightness requires both high output power and high beam quality. The traditional wide-contact semiconductor laser can obtain high single-tube output power and power conversion efficiency, but because the output aperture ratio is wide, lateral multi-mode is easily generated, and the local change of the refractive index easily generates beam wires, and finally the beam quality is poor. Ridge waveguide lasers, on the other hand, are capable of achieving a lateral near diffraction-limited output, but are limited by a small output aperture and gain volume, and are relatively low power.
In some structural designs for improving the beam quality of the laser, the tapered laser has the characteristics of simple structure and process. A tapered laser includes a ridge waveguide section with fundamental mode selection and a tapered gain section for mode amplification. High power near diffraction limit output tapered lasers have been reported. However, the conventional tapered laser has a great disadvantage of a large vertical divergence angle, and the full width at half maximum is usually over 30 ° or even 40 °, which makes the beam shaping more complicated and increases the cost in some applications. To achieve narrow vertical divergence angles, some mode expansion structures have been proposed, including oversized optical cavities, passive waveguides, low-index barrier layers, etc. However, these structures can only reduce the divergence angle to a certain extent, and can obtain a full width half maximum divergence angle of 20 ° or less at the minimum, and cannot further reduce the divergence angle to 10 ° or less. On the other hand, the confinement factor ratio of the fundamental mode to the high-order mode of these mode extension structures is not large enough, and lasing of the high-order mode in the vertical direction is easily caused under a large current. In addition, the refractive index in the vertical direction may vary due to local temperature differences, resulting in a change in the mode profile.
Therefore, it is necessary to provide a photonic crystal laser with good overall performance: the laser can improve the beam quality of the semiconductor laser, improve the output power, reduce the divergence angle in the vertical direction and realize stable vertical mode output.
Disclosure of Invention
Technical problem to be solved
In view of the above, an object of the present disclosure is to provide a tapered photonic crystal laser based on photonic crystal defect mode control, which can improve the beam quality of a semiconductor laser, increase the output power, reduce the vertical divergence angle, and achieve stable vertical mode output.
(II) technical scheme
According to one aspect of the present disclosure, there is provided a tapered photonic crystal laser based on photonic crystal defect mode control, comprising: an epitaxial layer structure, the epitaxial layer structure comprising: an N-type substrate; the N-type limiting layer is positioned on the N-type substrate; the perfect one-dimensional photonic crystal is positioned on the N-type limiting layer; the active region is positioned on the perfect one-dimensional photonic crystal; a P-type confinement layer located over the active region; the P-type contact layer is positioned on the P-type limiting layer; and a tapered structure disposed on a P-side of the epitaxial layer, the tapered structure comprising: a ridge waveguide portion; and a tapered waveguide portion connected to the ridge waveguide portion to realize gain; the perfect one-dimensional photonic crystal also comprises a defect layer which destroys the periodicity of the perfect one-dimensional photonic crystal, and the active region is positioned in the defect layer.
In some embodiments of the present disclosure, a perfect one-dimensional photonic crystal consists of more than one period.
In some embodiments of the present disclosure, each periodic layer of a perfect one-dimensional photonic crystal comprises two materials with alternating refractive indices, and the perfect one-dimensional photonic crystal in any two periodic layers has the same refractive index profile and thickness profile.
In some embodiments of the present disclosure, each periodic layer of a perfect one-dimensional photonic crystal achieves refractive index alternation by changing a certain element composition in a multi-element material, and for conical photonic crystal lasers with different wavelengths, the material system is different, and the elements of the changed composition are also different.
In some embodiments of the present disclosure, the defect layer is formed over a perfect one-dimensional photonic crystal by varying the thickness or refractive index to disrupt the one-dimensional photonic crystal periodic structure.
In some embodiments of the present disclosure, the active layer located at the defect region includes: single, multiple quantum well or quantum dot structures.
In some embodiments of the present disclosure, the width of the ridge waveguide portion is no greater than the cutoff width of the fundamental mode generated at the abrupt transition of the tapered waveguide portion;
preferably, the ridge waveguide portion forms a refractive index guiding structure;
preferably, the contact layers on both sides of the tapered waveguide portion are etched away to form the gain guide, or the tapered waveguide portion is etched to the same depth as the ridge waveguide portion to form the index guide structure.
In some embodiments of the present disclosure, the design of the tapered waveguide portion is matched to the design of the ridge waveguide portion, and the taper angle of the tapered structure is smaller than the fundamental mode diffraction angle.
In some embodiments of the present disclosure, the lengths of the tapered waveguide portion and the ridge waveguide portion are selected according to device design requirements to ensure that sufficient lateral mode filtering characteristics and sufficient gain volume are obtained.
In some embodiments of the present disclosure, a perfect one-dimensional photonic crystal is a periodic structure in which the difference in refractive index between two materials with different refractive indices in each period is greater than the change in refractive index caused by temperature or carrier distribution changes.
(III) advantageous effects
According to the technical scheme, the conical photonic crystal laser based on photonic crystal defect state mode control provided by the disclosure has at least the following beneficial effects:
(1) the photonic crystal is an ordered structure material formed by arranging more than two materials with different refractive indexes in a certain periodic sequence in space, photons can be regulated, a one-dimensional photonic crystal structure is applied to a semiconductor laser in the epitaxial direction to form a photonic crystal laser, the structure of the photonic crystal laser comprises a perfect one-dimensional photonic crystal structure with more than one period and a defect layer for destroying the periodicity of the one-dimensional photonic crystal, and the active region is positioned in the defect layer. The vertical mode is regulated and controlled based on the defect state of the photonic crystal, the basic mode is limited in the defect layer, and the basic mode is quickly attenuated in the perfect one-dimensional photonic crystal outside the defect layer; the higher order modes extend into the entire perfect one-dimensional photonic crystal structure with less overlap with the active region. Therefore, the fundamental mode confinement factor is much larger than the higher order mode confinement factor, thereby achieving stronger mode differentiation. And amplifying the fundamental mode light field by the gain effect of the active region in the defect layer to obtain single mode output in the vertical direction. The structure can reduce the vertical divergence angle, obtain the vertical divergence angle of about 10 degrees or even less than 5 degrees, improve the elliptical spot output of a laser output far field and improve the brightness of the laser. In addition, due to the periodic modulation of the refractive index by the perfect one-dimensional photonic crystal structure, the refractive index difference is usually larger than the refractive index change caused by temperature, and therefore stable vertical mode output is achieved.
(2) On the P surface of the epitaxial layer, a designed conical structure comprises a conical gain part and a ridge waveguide part, and the structural parameters of the conical gain part and the ridge waveguide part are reasonably designed to be matched to form the conical photonic crystal laser. Reasonably designing the structural parameters of the ridge waveguide part to ensure that only the fundamental mode is coupled into the conical gain region and the high-order mode is inhibited; the conical gain part is used for realizing the amplification of the lateral fundamental mode, and meanwhile, the output end face can improve the damage threshold of the catastrophic optical cavity surface due to the fact that the lateral near field size is increased. Finally, high-power light beam output close to the diffraction limit can be obtained.
Drawings
Fig. 1 is a schematic structural diagram of a tapered photonic crystal laser based on photonic crystal defect state mode control in the epitaxial direction according to an embodiment of the present disclosure.
Fig. 2 is a schematic diagram of a distribution of fundamental modes in a vertical direction of a tapered photonic crystal laser according to an embodiment of the present disclosure.
Fig. 3 is a schematic diagram of the vertical far field distribution of the tapered photonic crystal laser shown in fig. 2.
Fig. 4 is a schematic view of a tapered structure of a tapered photonic crystal laser according to an embodiment of the present disclosure.
Fig. 5 is a schematic diagram of the output far field of a tapered photonic crystal laser according to an embodiment of the present disclosure.
Fig. 6 is a schematic diagram of light intensity distribution at a beam waist after beam collimation of a tapered photonic crystal laser according to an embodiment of the present disclosure.
Fig. 7 is a schematic diagram of the three-dimensional structure and output beam of a tapered photonic crystal laser based on photonic crystal defect state mode control according to an embodiment of the present disclosure.
[ notation ] to show
11-P type electrode; a 12-P type contact layer;
13-an insulating layer; 14-P type confinement layer;
15, 43-active region; 16, 44-perfect one-dimensional photonic crystal;
a 17-N type confinement layer; an 18-N type substrate;
19-N type electrodes;
31, 41-ridge waveguide portions; 32, 42-tapered waveguide section.
Detailed Description
The utility model provides a toper photonic crystal laser based on photonic crystal defect mode control, with one-dimensional photonic crystal structure in being applied to semiconductor laser, form photonic crystal laser, its structure includes perfect one-dimensional photonic crystal structure more than a cycle and destroys the periodic defect layer of one-dimensional photonic crystal, the active region is located the defect layer, can regulate and control the vertical mode based on photonic crystal defect state, can improve semiconductor laser beam quality, improve output, reduce vertical direction divergence angle, realize stable vertical mode output.
For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings. In this disclosure, "tapered waveguide section" and "tapered gain section" are synonymous. In the present disclosure, the structure of a "perfect one-dimensional photonic crystal" includes a periodic structure and a defect layer. In the present disclosure, "P-plane of the epitaxial structure" means a plane containing the P-type electrode in the epitaxial structure.
For the purpose of keeping the drawings clean, some conventional structures and components may be shown in the drawings in a simplified schematic form. In addition, some features in the drawings may be slightly enlarged or changed in scale or size for the purpose of facilitating understanding and viewing of the technical features of the present invention, but this is not intended to limit the present invention. The actual dimensions and specifications of the product manufactured according to the present disclosure may be adjusted according to the manufacturing requirements, the characteristics of the product itself, and the invention as disclosed below.
Fig. 1 is a schematic structural diagram of a tapered photonic crystal laser based on photonic crystal defect state mode control in the epitaxial direction according to an embodiment of the present disclosure.
In a first exemplary embodiment of the present disclosure, there is provided a tapered photonic crystal laser based on photonic crystal defect mode control, comprising: an epitaxial layer structure, the epitaxial layer structure comprising: an N-type substrate 18; an N-type confinement layer 17 located over an N-type substrate 18; a perfect one-dimensional photonic crystal 16 located above the N-type confinement layer 17; an active region 15 located above the perfect one-dimensional photonic crystal 16; a P-type confinement layer 14 located over the active region 15; a P-type contact layer 12 located on the P-type confinement layer 14; a P-type electrode 11 located on the P-type contact layer 12; insulating layers 13 on both sides of the P-type contact layer 12 (hereinafter also referred to as a contact layer for ohmic contact) and the P-type electrode 11; and the conical structure is arranged on the P surface of the epitaxial layer and is manufactured by etching the contact layer 12 and the P-type electrode 11, and the conical structure comprises: a ridge waveguide portion; and a tapered waveguide portion connected to the ridge waveguide portion to realize gain; the perfect one-dimensional photonic crystal also comprises a defect layer for destroying the periodicity of the perfect one-dimensional photonic crystal, and the active region is positioned in the defect layer.
Wherein, the perfect one-dimensional photonic crystal is composed of more than one period. Each periodic layer of the perfect one-dimensional photonic crystal comprises two materials with alternating refractive indexes, and the perfect one-dimensional photonic crystals in any two periodic layers have the same refractive index distribution and thickness distribution.
In this embodiment, the perfect one-dimensional photonic crystal includes N periods, and appropriate parameters are selected according to the thickness and refractive index of two layers of materials in the single-period perfect one-dimensional photonic crystal. A perfect one-dimensional photonic crystal consists of two materials with different refractive indices alternating, which are achieved by varying the composition of certain elements, for example Al content for AlGaAs materials.
In the present disclosure, the difference in refractive index of a perfect one-dimensional photonic crystal periodic structure is typically greater than the change in refractive index caused by temperature or carrier distribution changes. The strong refractive index modulation effect enables the conical photonic crystal laser to obtain stable mode characteristics in the vertical direction.
In the present disclosure, a defect layer is formed on a perfect one-dimensional photonic crystal by breaking the one-dimensional photonic crystal periodic structure by changing the thickness or refractive index, and an active region is located in the defect layer.
In the present disclosure, the active region includes no less than one quantum well or quantum dot structure.
In the present disclosure, the vertical mode is modulated based on the photonic crystal defect state. Reasonably designing the structural parameters of the perfect one-dimensional photonic crystal and the defect layer to limit the fundamental mode in the defect layer, and gradually attenuating the fundamental mode in the periodic structure of the perfect one-dimensional photonic crystal far away from the defect layer; and the high-order mode extends into the whole perfect one-dimensional photonic crystal structure and has smaller overlap with the active region. And finally, the limiting factor of the fundamental mode is larger than the limiting factor of the high-order mode, so that stronger mode difference is realized, and the single-mode characteristic in the vertical direction is obtained. The active region is located in the optical defect layer such that only the fundamental mode obtains a gain output.
In the disclosure, the refractive index of the P-type confinement layer is lower than that of the perfect one-dimensional photonic crystal structure, so that the confinement of the optical field is realized.
In the disclosure, a composition gradient layer is designed between different layers of the epitaxial layer of the tapered photonic crystal laser to serve as a buffer layer, so that lattice mismatch is reduced.
According to the method, the thickness of the N-type limiting layer can be reasonably designed, so that the high-order mode can permeate into the N-type substrate, the base mode cannot leak into the substrate, and the loss of the high-order mode is far larger than that of the base mode. An absorption layer may also be introduced in the epitaxial layer so that the higher order modes are absorbed while the fundamental mode is unaffected. Further enhancing the mode differentiation.
Fig. 2 is a schematic diagram of a distribution of fundamental modes in a vertical direction of a tapered photonic crystal laser according to an embodiment of the present disclosure.
As shown in fig. 2, mode modulation based on photonic crystal defect states is also manifested in that the fundamental mode is expanded widely, and mode expansion of different sizes can be obtained by different one-dimensional photonic crystal period numbers. Mode expansion increases the spot size at the output facet. This reduces the vertical divergence angle to below 10 deg. or even 5 deg.. The increase of the mode size can reduce the optical power density of the output cavity surface, improve the catastrophic optical damage threshold of the conical photonic crystal laser, and further improve the output power.
Fig. 3 is a schematic diagram of the vertical far field distribution of the tapered photonic crystal laser shown in fig. 2. As shown in fig. 3, when the fundamental mode is broadened to around 6.7 μm, the far-field divergence angle full width at half maximum is 9.4 °. By further adjusting the vertical mode, a smaller vertical divergence angle can be obtained, and the horizontal divergence angle is usually within 10 degrees, so that a nearly circular output light spot can be obtained.
Preferably, a part of the covering layer or the waveguide layer is etched on both sides of the ridge waveguide part to form a refractive index guiding structure;
preferably, the contact layers on both sides of the tapered waveguide portion are etched away to form the gain guide, or the tapered waveguide portion is etched to the same depth as the ridge waveguide portion to form the index guide structure.
Fig. 4 is a schematic view of a tapered structure of a tapered photonic crystal laser according to an embodiment of the present disclosure. As shown in fig. 4, 31 is a ridge waveguide portion (hereinafter sometimes referred to as ridge portion, ridge waveguide), 32 is a tapered waveguide portion, and hereinafter, in order to highlight its role, it will be also described as a tapered gain portion. Wherein the ridge part forms a ridge waveguide with mode selection function by deep etching. The conical gain part can be manufactured by etching away the contact layers of the areas at two sides of the cone, so that the transverse diffusion of injected carriers is avoided, and a gain guide structure is formed; the tapered gain section may also be etched to the same depth as the ridge waveguide section to form the index guide, which simplifies the process.
In order to ensure the operation of the lateral fundamental mode, the width of the ridge waveguide can be obtained by calculating the cut-off width of the fundamental mode and the thickness of the residual covering layer, and the strip width cannot be larger than the cut-off width of the fundamental mode. In order to ensure low loss transmission, the angle of the tapered gain region is smaller than the diffraction angle of the fundamental mode. Therefore, the energy of the fundamental mode in the transmission of the light beam can be effectively prevented from being coupled into a high-order mode or a radiation mode.
The length design of the tapered portion and the ridge portion in the present disclosure ensures sufficient mode filtering characteristics to obtain lateral single-mode output, while also allowing the device to have as large a gain volume as possible to obtain higher power.
In some embodiments of the present disclosure, the design of the tapered waveguide portion is matched to the design of the ridge waveguide portion, and the taper angle of the tapered structure is smaller than the fundamental mode diffraction angle.
In some embodiments of the present disclosure, the lengths of the tapered waveguide portion and the ridge waveguide portion are selected according to device design requirements to ensure that sufficient lateral mode filtering characteristics and sufficient gain volume are obtained.
In some embodiments of the present disclosure, a composition graded layer is further included between different layers of the epitaxial layer as a buffer layer, so as to reduce lattice mismatch.
Fig. 5 is a schematic diagram of the output far field of a tapered photonic crystal laser according to an embodiment of the present disclosure. As shown in fig. 5, the horizontal direction and the vertical direction correspond to the lateral direction and the vertical direction of the output end face of the tapered photonic crystal laser, respectively. The vertical divergence angle is reduced to a certain extent, and when the vertical divergence angle is close to the horizontal divergence angle, the nearly circular light spot output shown in the figure can be obtained. This small divergence angle near-circular output far field can reduce the cost and complexity of beam shaping in applications.
Fig. 6 is a schematic diagram of light intensity distribution at a beam waist after beam collimation of a tapered photonic crystal laser according to an embodiment of the present disclosure. As shown in fig. 6, the horizontal direction and the vertical direction correspond to the lateral direction and the vertical direction of the output end face of the tapered photonic crystal laser, respectively. The light intensity at the beam waist in the lateral direction and the vertical direction is distributed in a nearly Gaussian single lobe mode, and the fact that the conical photonic crystal laser has the beam quality close to the diffraction limit in the vertical direction and the horizontal direction is shown.
Fig. 7 is a schematic diagram of the three-dimensional structure and output beam of a tapered photonic crystal laser based on photonic crystal defect state mode control according to an embodiment of the present disclosure. As shown in fig. 7, 41 and 42 are an on-plane ridge waveguide portion and a tapered gain portion, respectively, 43 is an active region, and 44 is a periodic structure of a perfect one-dimensional photonic crystal. The laser can achieve near-circular beam output when the divergence angles in the vertical direction and the lateral direction are comparable, and the lateral direction and the vertical direction are single-mode output. The one-dimensional photonic crystal periodic structure reduces the divergence angle by regulating the vertical mode, and obtains stable single-mode output. In addition, the light-emitting aperture of the conical photonic crystal structure is large in the vertical direction and the horizontal direction, the optical power density of the cavity surface is reduced, and the cavity surface damage threshold of the conical photonic crystal laser is improved. Finally, the brightness of the laser is improved from the aspects of both the beam quality and the output power of the chip.
In summary, the present disclosure provides a tapered photonic crystal laser based on photonic crystal defect mode control, in which a one-dimensional photonic crystal structure is applied to a semiconductor laser to form a photonic crystal laser, the structure of the photonic crystal laser includes a perfect one-dimensional photonic crystal structure with more than one period and a defect layer that destroys the periodicity of the one-dimensional photonic crystal, an active region is located in the defect layer, and a vertical mode can be adjusted and controlled based on the photonic crystal defect state, so that the beam quality of the semiconductor laser can be improved, the output power can be increased, the divergence angle in the vertical direction can be reduced, and stable vertical mode output can be realized.
It should be noted that in the drawings or description, the same drawing reference numerals are used for similar or identical parts. Implementations not depicted or described in the drawings are of a form known to those of ordinary skill in the art. Additionally, while exemplifications of parameters including particular values may be provided herein, it is to be understood that the parameters need not be exactly equal to the respective values, but may be approximated to the respective values within acceptable error margins or design constraints. Directional phrases used in the embodiments, such as "upper," "lower," "front," "rear," "left," "right," and the like, refer only to the orientation of the figure. Accordingly, the directional terminology used is intended to be in the nature of words of description rather than of limitation.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.
The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.
Claims (8)
1. A conical photonic crystal laser based on photonic crystal defect mode control is characterized by comprising: an epitaxial layer structure, the epitaxial layer structure comprising:
an N-type substrate;
the N-type limiting layer is positioned on the N-type substrate;
the perfect one-dimensional photonic crystal is positioned on the N-type limiting layer;
the active region is positioned on the perfect one-dimensional photonic crystal;
a P-type confinement layer located over the active region;
the P-type contact layer is positioned on the P-type limiting layer; and
a tapered structure disposed on a P-plane of the epitaxial layer, the tapered structure comprising: a ridge waveguide portion; and a tapered waveguide portion connected to the ridge waveguide portion to realize gain;
the perfect one-dimensional photonic crystal is composed of more than one period, each period layer of the perfect one-dimensional photonic crystal comprises two materials with alternately changed refractive indexes, and the perfect one-dimensional photonic crystals in any two period layers have the same refractive index distribution and thickness distribution;
the perfect one-dimensional photonic crystal also comprises a defect layer for destroying the periodicity of the perfect one-dimensional photonic crystal, and the active region is positioned in the defect layer;
the defect layer is formed on the perfect one-dimensional photonic crystal by changing the thickness or the refractive index to destroy the periodic structure of the one-dimensional photonic crystal;
a perfect one-dimensional photonic crystal is a periodic structure in which the difference in refractive index between two materials with different refractive indices in each period is greater than the change in refractive index caused by temperature or changes in carrier distribution.
2. The tapered photonic crystal laser as claimed in claim 1, wherein each periodic layer of the perfect one-dimensional photonic crystal achieves refractive index alternation by changing the composition of an element in a multi-element material, and the material system is different and the elements of the changed composition are different for tapered photonic crystal lasers with different wavelengths.
3. The tapered photonic crystal laser of claim 1, wherein the active layer located in the defect layer comprises: single, multiple quantum well or quantum dot structures.
4. The tapered photonic crystal laser of claim 1, wherein the width of the ridge waveguide portion is no greater than the cutoff width of the fundamental mode generated at the abrupt transition of the tapered waveguide portion.
5. The tapered photonic crystal laser of claim 4, wherein the ridge waveguide portion forms an index guiding structure.
6. The tapered photonic crystal laser as claimed in claim 5, wherein the contact layers on both sides of the tapered waveguide section are etched away to form the gain guide or the tapered waveguide section is etched to the same depth as the ridge waveguide section to form the index guiding structure.
7. A tapered photonic crystal laser as claimed in claim 1 in which the design of the tapered waveguide section is matched to that of the ridge waveguide section and the taper angle of the tapered structure is less than the fundamental mode diffraction angle.
8. The tapered photonic crystal laser of claim 1, wherein the lengths of the tapered waveguide portion and the ridge waveguide portion are selected according to device design requirements to ensure adequate lateral mode filtering characteristics and adequate gain volume.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1897375A (en) * | 2005-07-15 | 2007-01-17 | 中国科学院半导体研究所 | 2.5-dimensional photon crystal-face transmitting laser |
| CN104409965A (en) * | 2014-07-18 | 2015-03-11 | 中国科学院长春光学精密机械与物理研究所 | A Bragg reflection waveguide GaSb base semiconductor laser |
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