CN105098595A - Fabrication method for integrated semiconductor laser - Google Patents
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- CN105098595A CN105098595A CN201510612638.5A CN201510612638A CN105098595A CN 105098595 A CN105098595 A CN 105098595A CN 201510612638 A CN201510612638 A CN 201510612638A CN 105098595 A CN105098595 A CN 105098595A
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Abstract
The invention discloses an integrated semiconductor laser of a 2-micrometer single-mode high-power GaSb-based metal grating master oscillator power amplifier and a fabrication method of the integrated semiconductor laser. The semiconductor laser comprises a substrate, an epitaxial structure, a gain amplification region, a master oscillator region, a metal grating region and light limitation grooves, wherein the epitaxial structure is grown on the substrate and comprises an N-type lower contact layer, an N-type lower limitation layer, a lower waveguide layer, an active region, an upper waveguide layer, a P-type upper limitation layer and a P-type upper contact layer from bottom to top, the gain amplification region is arranged at the front part, namely an emergent light part of the semiconductor laser and is of an isosceles trapezoid structure formed by downwards etching the P-type upper contact layer, the master oscillator region is arranged at the rear part of the gain amplification region and is of a ridged waveguide structure formed by downwards etching the P-type upper contact layer and the P-type upper limitation layer, the metal grating region is arranged at the rear part of the master oscillator region and is of a periodic grating structure formed on the surface of the upper waveguide layer, the light limitation grooves are symmetrically arranged at the two sides of ridged waveguide structure, and the light limitation grooves and the ridged waveguide structure are arranged in an inclining manner.
Description
Technical field
The present invention relates to middle infrared semiconductor laser, refer to a kind of preparation method of 2 μm of single mode high power GaSb Base Metal grating master oscillator power amplifier (MOPA) integrated semiconductor lasers especially.
Background technology
2-5 mu m waveband comprises very important atmospheric window, contains the characteristic spectral line of many gas molecules, can be widely used in the civilian projects such as atmospheric pollution monitoring, gas detect; And the high power laser being operated in this wave band can be desirably in the military project such as laser radar, electrooptical countermeasures and plays better effect.Traditional Si base, GaAs sill band gap are wider, can not meet the requirement to wavelength.And the band gap of GaSb material relative narrower has inborn advantage, but the F-P cavity semiconductor laser of ordinary construction mostly is multimode operation, when High Speed Modulation, spectrum widening effect can occur.Along with the development of two-forty optical fiber telecommunications system and the raising of environmental monitoring demand precision, all noise spectra of semiconductor lasers is had higher requirement.Development single mode operation, high light beam quality, powerful GaSb laser become the developing important directions of semiconductor laser.
The common Wavelength stabilized method of single longitudinal mode that realizes is DFB structure and dbr structure, for GaSb sill, the problem of the easy oxidation that the high aluminium component in its ducting layer and limiting layer brings makes traditional to need the manufacture difficulty of burying grating DFB of secondary epitaxy very large.GaSb base DFB utilizes the ridge waveguide in epitaxial loayer and Bragg grating to come the index guide structure of light and gain guided, but, in order to ensure the single mode operation of laser, the width of ridge waveguide is at the order of magnitude of several microns, its light-emitting face is long-pending very little, optical power density is very large, catastrophic optical damage (the Catastrophicopticalmirrordamage in face, easy generation chamber, COMD), be unfavorable for the steady operation of laser, its power output has also been limited in lower scope, promoting the most effective method of semiconductor laser power output is that to increase the bar in ridge waveguide district wide, but the wide increase of bar can affect the stability of single mode laser, cannot bonding transverse mode single longitudinal mode operation, narrower ridge waveguide improves optical output power and easily causes catastrophic optical damage again, the research of high-power single-mode laser is a hot issue.
Realizing the most effective method of high-power and high-luminance single-mode output is master oscillator power amplifier (MasterOscillatorPowerAmplifier, MOPA) structure, MOPA is formed primarily of main oscillations (MO) district and amplification (PA) district, main oscillations district Main Function produces high-quality seed light source, excessive demand is not had for power, thus export light to be comparatively easy to do the stability of pattern, keep good beam quality, power amplifying part Main Function is then amplify seed light, high-power output is achieved again while ensure that the high light beam quality exporting light.
Summary of the invention
In view of this, the present invention proposes a kind of semiconductor laser and preparation method thereof, to realize high-power single-mode laser.
According to an aspect of the present invention, which provide a kind of semiconductor laser, it comprises:
Substrate,
Epitaxial structure, it grows on described substrate, comprises from the bottom to top: contact layer in contact layer, N-type lower limit layer, lower waveguide layer, active area, upper ducting layer, P type upper limiting layer, P type under N-type;
Gain amplification region, it is positioned at front portion and the bright dipping part of described semiconductor laser, for etching the isosceles trapezoidal structure that in described P type, contact layer is formed downwards;
Main oscillations district, it is positioned at rear portion, described gain amplification region, for etching the ridged waveguide structure that in described P type, contact layer and P type upper limiting layer are formed downwards;
Metal grating district, it is positioned at rear portion, described main oscillations district, for being formed in preiodic type Prague metal grating structure on described upper ducting layer surface;
Light limiting groove, it is symmetrically distributed in the both sides of described ridged waveguide structure, is obliquely installed with described ridged waveguide structure.
According to a further aspect of the invention, which provide a kind of method for the preparation of semiconductor laser as discussed, comprise the steps:
Step 1: on substrate successively contact layer under deposited n-type, N-type lower limit layer, lower waveguide layer, active area, on ducting layer, P type upper limiting layer, contact layer in P type;
Step 2: gain amplification region prepared by the material described in step 1;
Step 3: main oscillations district prepared by the material described in step 2, wherein adjacent gain amplification region, main oscillations district;
Step 4: metal grating district prepared by the material described in step 3, described metal grating district is positioned at rear portion, main oscillations district, and whole semiconductor laser structure is followed successively by gain amplification region, main oscillations district, metal grating district from front to back;
Step 5: the mask pattern preparing by ducting layer light limiting groove in the P type of both sides, main oscillations district prepared by step 3, and etch P type upper limiting layer, upper ducting layer, active area, lower waveguide layer, N-type lower limit layer downwards;
Step 5: with plasma enhanced chemical vapor deposition method deposition SiN on the whole surface of the structure of step 4 gained
xas insulating barrier and raster filling layer;
Step 6: utilize photoetching on the basis of step 6 resulting structures, prepares pulse current injectingt window in main oscillations district and gain amplification region, then etches described insulating barrier and contact layer in P type is come out, for completing the ohmic contact with metal electrode.
The described semiconductor laser that the present invention proposes is 2 μm of single mode high power GaSb Base Metal grating master oscillator power amplifier (MOPA) integrated semiconductor lasers, its by by oscillator (ridge waveguide district) and power amplifier (tapered gain region) and metal grating on the same chip integrated, define the ridge waveguide Bragg reflector semiconductor laser with gain region.Narrow ridge waveguide district supplies a pattern the good single transverse mode low power laser of quality, the metal grating echo area at rear portion, ridge waveguide district provides the screening of longitudinal mode pattern, improve side mode suppression ratio, ensure that the single mode emission of laser, tapered gain region achieves the amplification of single-mode laser on power that rib region is injected, and ensure that original pattern swashs simultaneously and penetrates.The introducing of light limiting groove avoids the oscillatory feedback of FP mode light, makes laser works pattern more stable.The exiting surface of conical laser is tapered zone end face, and its lighting area is comparatively large, just effectively decreases the power density of shoot laser, thus adds the threshold light power of face, chamber catastrophic optical damage, ensures the high-power steady operation of laser.
Accompanying drawing explanation
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail, wherein:
Fig. 1 is the structural representation of semiconductor laser in the present invention;
Fig. 2 is the vertical view of semiconductor laser structure in the present invention;
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
It should be noted that, the implementation not illustrating in accompanying drawing or describe, is form known to a person of ordinary skill in the art in art.In addition, although herein can providing package containing the demonstration of the parameter of particular value, should be appreciated that, parameter without the need to definitely equaling corresponding value, but can be similar to corresponding value in acceptable error margin or design constraint.In addition, the direction term mentioned in following examples is only the direction with reference to accompanying drawing.Therefore, the direction term of use is used to illustrate and is not used for limiting the present invention.
The invention provides a kind of preparation method of 2 μm of single mode high power GaSb Base Metal grating master oscillator power amplifier (MOPA) integrated semiconductor lasers, by by oscillator (ridge waveguide district) and power amplifier (tapered gain region) and metal grating on the same chip integrated, define the ridge waveguide Bragg reflector semiconductor laser with gain region.Narrow ridge waveguide district supplies a pattern the good single transverse mode low power laser of quality, the dbr region at rear portion, ridge waveguide district provides the screening of longitudinal mode pattern, improve the single mode emission that side mode suppression ratio ensure that laser, because the uneven distribution of charge carrier and thermal effect impact make also to make laser beam quality better while tapered gain region reduces exit facet optical power density, make simpler.
Below respectively the various piece of the present embodiment 2 μm of single mode high power GaSb Base Metal grating master oscillator power amplifier (MOPA) integrated semiconductor lasers is described in detail.
As shown in Figure 1, the invention provides a kind of 2 μm of single mode high power GaSb Base Metal grating master oscillator power amplifier MOPA integrated semiconductor lasers, its epitaxial structure is as follows:
Substrate 1 is (100) face N-type gallium antimony material.
Epitaxial structure, grow on described substrate 1, it comprises from the bottom to top: contact layer 2 under the heavily doped GaSb of N-type; The AlGaAsSb lower limit layer 3 of N-type doping; The lower waveguide layer 4 of undoped; The active area 5 of undoped; Ducting layer 6 on the AlGaAsSb of undoped; The AlGaAsSb upper limiting layer 7 of P type doping; Contact layer 8 on the GaSb of P type doping; Wherein said active area 5 can comprise 1-3 quantum well, and barrier layer is the AlGaAsSb of undoped, and potential well layer is the InGaSb of undoped.Wherein, resilient coating (not shown) can also be comprised between described upper limiting layer 7 and upper contact layer 8, bottom breaker (not shown) can also be comprised between lower contact layer 2 and lower limit layer 3;
Gain amplification region, it is positioned at front portion and the bright dipping part of described laser, for etching the isosceles trapezoidal structure that described upper contact layer 8 is formed downwards;
Main oscillations district, it is positioned at rear portion, described gain amplification region, for etching the ridged waveguide structure of described upper contact layer 8 and upper limiting layer 7 formation downwards;
Metal grating district, it is positioned at rear portion, described main oscillations district, by the preiodic type Prague crome metal Cr optical grating constitution be deposited on upper ducting layer 6
Light limiting groove, it is symmetrically distributed in described ridge waveguide both sides, is obliquely installed with described ridge waveguide.
Alternatively, described lower contact layer is N-type heavily doped gallium antimony material, and thickness is 200nm-500nm, and tellurium doping content is 1e
18-8e
19cm
-3;
The gallium aluminium arsenic antimony material that described lower limit layer 3 adopts N-type to adulterate, its component ratio is Al
0.3-0.9gaAs
0.02-0.04sb, thickness is 1.0 μm-2.5 μm, and tellurium doping content is 1e
17-1e
18cm
-3.
Alternatively, described lower waveguide layer 4 is undoped gallium aluminium arsenic antimony material, and component ratio is Al
0.3-0.6gaAs
0.02-0.04sb thickness is 40nm-500nm.
Alternatively, described active area 5 can comprise 1-3 quantum well, and barrier layer is the AlGaAsSb of undoped, and thickness is 30nm-100nm, and potential well layer is the InGaSb of undoped, and thickness is 5-10nm, and its component ratio is respectively Al
0.05-0.3gaAs
0.02-0.04sb, In
0.05-0.3gaSb.
Alternatively, the gallium aluminium arsenic antimony material that described upper ducting layer 6 adulterates for P type, its component ratio is Al
0.3-0.6gaAs
0.02-0.04sb, thickness is 40nm-500nm.
Alternatively, the gallium aluminium arsenic antimony material that described upper limiting layer 7 adulterates for P type, its component ratio is Al
0.3-0.9gaAs
0.02-0.04sb, thickness is 1.0 μm-2.5 μm, and beryllium doping content is 1e
18-1e
19cm
-3.
Alternatively, described upper contact layer is the gallium antimony material of P type doping, and thickness is 250nm-500nm, and beryllium doping content is 1e
19-8e
19cm
-3.
The AlGaAsSb lower waveguide layer interface of N-type AlGaAsSb lower limit layer and undoped easily forms high-quality heterojunction, reduces interface number, reduces the intensification that interfacial state compound thermal effect causes, thus improves the reliability of laser.
Alternatively, upper ducting layer and upper limiting layer adopt gallium aluminium arsenic antimony material, easily like this obtain high-quality epitaxial material, thus improve the epitaxial wafer rate of finished products of laser.
Upper contact layer 8 can form good ohmic contact with common p side electrode material TiPtAu, thus reduces the interior resistance of laser.
Alternatively, please refer to Fig. 2, in the present embodiment, the top section of P type AlGaAsSb upper limiting layer 7 is etched formation ridge waveguide, but the present invention is not as limit.Those skilled in the art should clear enough, and the degree of depth of this etching can be below P type AlGaAsSb upper limiting layer 7 upper surface, and any degree of depth on the AlGaAsSb of undoped more than ducting layer lower surface.Generally, tapered gain amplification region is isosceles trapezoid, isosceles trapezoid correspond to light-emitting face below, top is near ridge waveguide district, the length of top is 3 μm-30 μm, the height of isosceles trapezoid is 500 μm of-2mm, and the base angle number of degrees of isosceles trapezoid are 30 °-87 °, and tapered gain region etching depth is 250nm-500nm.The length of this ridge waveguide is 800 μm of-2.5mm, and depth H is between 250nm-2.5 μm, and total width is between 3 μm-15 μm.The preiodic type screen periods being wherein distributed in ridge waveguide rear portion is 280nm-2800nm, and grating region total length is 500nm-2.5mm, width 3 μm-100 μm, and the height of chromium Cr metal grating is 20nm-100nm, and grating duty ratio is 0.1-0.5.The length of tapered gain region is 1mm-2.5mm, and etching depth is 250nm-500nm.Light limiting groove is isosceles trapezoid, the long 15-40 micron of waist, the upper length of side 100 μm-150 μm, the lower length of side 155 μm-300 μm.Light limiting groove is axisymmetric is distributed in ridge waveguide both sides, the upper length of side of its isosceles trapezoid is near dbr region, the lower length of side is near gain amplification region, its isosceles trapezoid is parallel with ridge waveguide near the waist of ridge waveguide, the angle of inclination of light limiting groove is 20 °-75 °, the distance the most nearby of light limiting groove distance ridge waveguide is 5 μm-50 μm, and the etching depth of light limiting groove is 500nm-2.5 μm.
The schematic diagram of 2 μm of single mode high power GaSb Base Metal grating master oscillator power amplifier (MOPA) integrated semiconductor lasers as shown in the figure.The rear portion that the grating of preiodic type is positioned at ridge waveguide provides light to screen, in order to the effect making grating effectively play Coupled Feedback, the feedback wavelength of the grating that laser excitation wavelength must be is near required wavelength (2 μm-5 μm), and this numerical value is also close with the material gain peak wavelength of active area.Wherein, described side-coupled screen periods is according to following formulae discovery
In formula (1), entering is distributed feedback laser excitation wavelength, N
efffor the pattern effective refractive index of described active area.M is grating exponent number, and duty ratio is between 0.1-0.5.
So far, the present embodiment 2 μm of single mode high power GaSb Base Metal grating master oscillator power amplifier (MOPA) integrated semiconductor lasers are introduced complete.
In another embodiment of the present invention, additionally provide a kind of preparation method of above-mentioned laser, figure is the flow chart of the embodiment of the present invention 2 μm of single mode high power GaSb Base Metal grating master oscillator power amplifier (MOPA) integrated semiconductor laser preparation methods.This preparation method comprises:
Step 1, GaSb substrate deposits contact layer respectively under the N-type GaSb of 500nm, tellurium doping content 2e
18cm
-3, 1500nm Al
0.7gaAs
0.02sb lower limit layer, tellurium doping content 4e
17cm
-3, 300nm undoped Al
0.4gaAs
0.02the In of the 5nm of Sb lower waveguide layer, undoped
0.1the Al of the undoped of GaSb quantum well layer, 300nm
0.4gaAs
0.02the upper limiting layer of the AlGaAsSb of the P type doping of the upper ducting layer of Sb, 1500nm, beryllium doping content 5e
17cm
-3, 500nm P type doping GaSb on contact layer, beryllium doping content 2e
19cm
-3.
Step 2, gain amplification region prepared by the material described in step 1, and this step comprises further:
Sub-step 2-1, spin coating photoresist on contact layer on the GaSb of P type doping, by common contact exposure method, mask is done with photolithography plate, prepare the mask pattern of gain region, wherein, described gain amplification region is isosceles trapezoid, its isosceles trapezoid correspond to light-emitting face below, top is near described main oscillations district;
Sub-step 2-2, does mask with photoresist, etches, thus obtain gain amplification region by inductively coupled plasma (ICP) method to contact layer in described P type, the length of side 7 μm on gain amplification region.High 1mm, 70 °, base angle, etching depth is 500nm
Step 3, ridge waveguide district prepared by structural material described in step 1, and this step comprises further:
Sub-step 3-1, by the method for common contact photolithography in the structure of step 2 gained, mask is done with photolithography plate, carve the mask pattern of ridge waveguide, described ridge waveguide is adjacent to the rear portion of described gain amplification region, it is while overlap with described the following of gain amplification region, and its another side overlaps with metal grating district.
Sub-step 3-2, mask with photoresist, etch by inductively coupled plasma (ICP) method, successively contact layer and upper limiting layer in described P type are etched, the both sides of ridge waveguide and the metal grating district material at rear portion are all etched simultaneously, are etched to below upper limiting layer upper surface, thus obtain original ridge waveguide at structural material upper surface, the difference in height of ridge waveguide district upper surface and metal grating district upper surface i.e. step etching depth for this reason, etching depth is 2 μm.This ridge waveguide width is 7 μm, and length is 1.5mm.
Step 4, the basis of step 3 is prepared metal grating district, and this step comprises further:
Sub-step 4-1 is the grating mask of 280nm duty ratio 0.4 in the cycle of the rear portion of ridge waveguide formation electron beam adhesive by the method for electron beam exposure on the basis of step 3 resulting structures.
Sub-step 4-2, the Metal Cr that electron beam evaporation 70nm is thick Lift-off form metal grating.Crome metal Cr grating is positioned at and is deposited on ducting layer surface
Step 5, adopts the method for contact photolithography, prepares the mask pattern of light limiting groove in ridge waveguide both sides prepared by step 3, long 22 μm of waist, the upper length of side 110 μm, the lower length of side 165 μm.Light limiting groove is axisymmetric is distributed in ridge waveguide both sides, and the angle of inclination of light limiting groove is 43 °, and the distance the most nearby of light limiting groove distance ridge waveguide is 16 μm.
Step 6, the photoresist mask obtained by step 4, etches P type upper limiting layer downwards with inductance Coupled Plasma Method, upper ducting layer, active area, lower waveguide layer, N-type lower limit layer, and light limiting groove etching depth is 1.5 μm.
Step 7, with the SiN that plasma enhanced chemical vapor deposition (PECVD) method deposition 300nm is high in the structure of step 5 gained
xas insulating barrier and raster filling layer.
Step 8, the basis of step 6 resulting structures utilizes photoetching, prepares pulse current injectingt window, then etch SiN with ICP in ridge waveguide district and gain amplification region
x300nm, makes P type GaSb contact layer come out for completing the ohmic contact with metal electrode.
It should be noted that, the preparation method of this one 2 μm of single mode high power GaSb Base Metal grating master oscillator power amplifier (MOPA) integrated semiconductor lasers also needs upper/lower electrode preparation, device is thinning, multiple technique such as cleavage, it is not emphasis place of the present invention, repeats no more herein.
So far, the preparation method of a kind of 2 μm of single mode high power GaSb Base Metal grating master oscillator power amplifier (MOPA) integrated semiconductor lasers of the present embodiment introduces complete.Describe according to this, those skilled in the art should have the present invention and to be clearly familiar with accurately.
In addition, the above-mentioned definition to each element and method is not limited in the various concrete structure or shape mentioned in execution mode, the replacement that those of ordinary skill in the art can know simply to it, such as:
Inductively coupled plasma (ICP) can also substitute by reactive ion etching (RIE) method;
SiN
xinsulating barrier can use SiO
2substitute;
In sum, the invention provides a kind of preparation method of 2 μm of single mode high power GaSb Base Metal grating master oscillator power amplifier (MOPA) integrated semiconductor lasers.Ridge waveguide narrower in this laser completes the screening to light transverse mode, the Bragg grating being positioned at the rear portion of ridged waveguide structure completes the screening to light longitudinal mode, the basic mode light of tapered gain amplification region to incidence serves the effect that gain is amplified, reduce the optical power density in emergent light face simultaneously, improve the power output of laser, the introducing of light limiting groove avoids the concussion feedback of FP mode light, makes laser works pattern more stable.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. a semiconductor laser, it comprises:
Substrate,
Epitaxial structure, it grows on described substrate, comprises from the bottom to top: contact layer in contact layer, N-type lower limit layer, lower waveguide layer, active area, upper ducting layer, P type upper limiting layer, P type under N-type;
Gain amplification region, it is positioned at front portion and the bright dipping part of described semiconductor laser, for etching the isosceles trapezoidal structure that in described P type, contact layer is formed downwards;
Main oscillations district, it is positioned at rear portion, described gain amplification region, for etching the ridged waveguide structure that in described P type, contact layer and P type upper limiting layer are formed downwards;
Metal grating district, it is positioned at rear portion, described main oscillations district, for being formed in preiodic type Prague metal grating structure on described upper ducting layer surface;
Light limiting groove, it is symmetrically distributed in the both sides of described ridged waveguide structure, is obliquely installed with described ridged waveguide structure.
2. semiconductor laser as claimed in claim 1, wherein, the screen periods in described metal grating district is 280nm-2800nm, grating region total length is 500nm-2.5mm, and width is 3 μm-100 μm, and the height of metal grating is 20nm-100nm, duty ratio is 0.1-0.5, and screen periods is
Wherein, λ is the excitation wavelength of described semiconductor laser, N
efffor the pattern effective refractive index of described active area, m is grating exponent number.
3. semiconductor laser as claimed in claim 1, wherein, the material of described substrate is N-type gallium antimony; Described active area is gallium aluminium arsenic antimony material and the indium-gallium-stibium material of undoped.
4. semiconductor laser as claimed in claim 3, wherein, described semiconductor laser is 2 μm of single mode high power GaSb Base Metal grating master oscillator power amplifier integrated semiconductor lasers.
5. the semiconductor laser as described in any one of claim 1-4, wherein, described lower contact layer is N-type heavily doped gallium antimony material, and thickness is 200nm-500nm, and tellurium doping content is 1e
18-8e
19cm
-3, described lower limit layer is the gallium aluminium arsenic antimony material of N-type doping, and its component ratio is Al
0.3-0.9gaAs
0.02-0.04sb, tellurium doping content is 1e
17-1e
18cm
-3, thickness is 1.0 μm-2.5 μm; Lower waveguide layer is undoped gallium aluminium arsenic antimony material, and component ratio is Al
0.3-0.6gaAs
0.02-0.04sb, thickness is 40nm-500nm; Lower waveguide layer is undoped gallium aluminium arsenic antimony material, and component ratio is Al
0.3-0.6gaAs
0.02-0.04sb thickness is 40nm-500nm; Active area comprises 1-3 quantum well, and barrier layer is the AlGaAsSb of undoped, and thickness is 30nm-100nm, and potential well layer is the InGaSb of undoped, and thickness is 5-10nm, and its component ratio is respectively Al
0.05-0.3gaAs
0.02-0.04sb, In
0.05-0.3gaSb; Upper ducting layer is the gallium aluminium arsenic antimony material of P type doping, and its component ratio is Al
0.3-0.6gaAs
0.02-0.04sb, thickness is 40nm-500nm; Upper limiting layer is the gallium aluminium arsenic antimony material of P type doping, and its component ratio is Al
0.3-0.9gaAs
0.02-0.04sb, thickness is 1.01m-2.5 μm, and beryllium doping content is 1e
18-1e
19cm
-3; Upper contact layer is the gallium antimony material of P type doping, and beryllium doping content is 1e
19-8e
19cm
-3, thickness is 250nm-500nm.
6. the semiconductor laser as described in any one of claim 1-4, wherein, the width of described ridged waveguide structure is 3 μm-10 μm, and length is 800 μm of-2.5mm, and etching depth is 250nm-2.5 μm.
7. the semiconductor laser as described in any one of claim 1-4, wherein, the isosceles trapezoid of described gain amplification region corresponds to light-emitting face below, top is near main oscillations district, the length of top is 3 μm-30 μm, the height of isosceles trapezoid is 500 μm of-2mm, and the base angle number of degrees of isosceles trapezoid are 30 °-87 °, and its etching depth is 250nm-500nm.
8. the semiconductor laser as described in any one of claim 1-4, wherein, light limiting groove is the isosceles trapezoidal structure that axial symmetry is distributed in ridge waveguide both sides, the upper length of side is near metal grating district, the lower length of side is near described gain amplification region, the long 15-40 μm of waist, the upper length of side 100 μm-150 μm, the lower length of side 155 μm-300 μm; The isosceles trapezoid of described smooth limiting groove is parallel with ridge waveguide near the waist of ridge waveguide, and its angle of inclination is 20 °-75, and the distance the most nearby of its distance ridge waveguide is 5 μm-50 μm, and etching depth is 500nm-2.5 μm.
9., for the preparation of a method for the semiconductor laser such as according to any one of claim 1-8, comprise the steps:
Step 1: on substrate successively contact layer under N-type, N-type lower limit layer, lower waveguide layer, active area, on ducting layer, P type upper limiting layer, contact layer in P type;
Step 2: gain amplification region prepared by the material described in step 1;
Step 3: main oscillations district prepared by the material described in step 2, wherein adjacent gain amplification region, main oscillations district:
Step 4: metal grating district prepared by the material described in step 3, described metal grating district is positioned at rear portion, main oscillations district, and whole semiconductor laser structure is followed successively by gain amplification region, main oscillations district, metal grating district from front to back;
Step 5: the mask pattern preparing by ducting layer light limiting groove in the P type of both sides, main oscillations district prepared by step 3, and etch P type upper limiting layer, upper ducting layer, active area, lower waveguide layer, N-type lower limit layer downwards;
Step 5: with plasma enhanced chemical vapor deposition method deposition SiN on the whole surface of the structure of step 4 gained
xas insulating barrier and raster filling layer;
Step 6: utilize photoetching on the basis of step 6 resulting structures, prepares pulse current injectingt window in main oscillations district and gain amplification region, then etches described insulating barrier and contact layer in P type is come out, for completing the ohmic contact with metal electrode.
10. method as claimed in claim 9, wherein, described step 2 specifically comprises:
Step 2-1: spin coating photoresist on contact layer in P type, do mask with photolithography plate, prepare the isosceles trapezoid mask pattern of gain amplification region, described gain amplification region is positioned at the forefront of whole device;
Step 2-2: do mask with photoresist, with contact layer in inductance Coupled Plasma Method etching P type, thus obtains gain amplification region.
11. methods as claimed in claim 9, wherein, described step 3 specifically comprises:
Step 3-1: do mask with photolithography plate in the structure of step 2 gained, carve the mask pattern of ridge waveguide;
Step 3-2: mask with photoresist, etches with inductance Coupled Plasma Method, etches contact layer and P type upper limiting layer in P type successively.
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| CN106785829A (en) * | 2017-01-10 | 2017-05-31 | 中国科学院长春光学精密机械与物理研究所 | A kind of distributed feedback laser and preparation method thereof, distributed feedback laser array |
| CN106953235A (en) * | 2016-03-17 | 2017-07-14 | 中国科学院半导体研究所 | Single mode GaSb base semiconductor lasers and preparation method thereof |
| CN109560464A (en) * | 2017-09-26 | 2019-04-02 | 北京万集科技股份有限公司 | A kind of 1xN type single-chip integration formula semiconductor main oscillations amplifier |
| CN109599743A (en) * | 2018-11-23 | 2019-04-09 | 中国科学院半导体研究所 | Pyramidal photonic crystal laser based on photonic crystal defect state scheme control |
| CN109861079A (en) * | 2019-01-08 | 2019-06-07 | 中国科学院半导体研究所 | One-dimensional radar scanning emitter and preparation method based on micro-structure laser |
| CN110824614A (en) * | 2019-11-19 | 2020-02-21 | 东南大学 | Transverse magnetic mode cut-off transverse electric mode equipartition optical power divider based on three-coupling waveguide |
| CN112421378A (en) * | 2020-11-18 | 2021-02-26 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser |
| CN113206441A (en) * | 2021-04-30 | 2021-08-03 | 中国科学院半导体研究所 | Main oscillation power amplification laser and preparation method thereof |
| CN115021823A (en) * | 2021-03-04 | 2022-09-06 | 华为技术有限公司 | Modulation amplifier, light emitting device, optical network unit and optical line terminal |
| CN115275785A (en) * | 2022-09-27 | 2022-11-01 | 潍坊先进光电芯片研究院 | Semiconductor laser array structure |
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| CN106953235A (en) * | 2016-03-17 | 2017-07-14 | 中国科学院半导体研究所 | Single mode GaSb base semiconductor lasers and preparation method thereof |
| CN106785829B (en) * | 2017-01-10 | 2019-09-27 | 中国科学院长春光学精密机械与物理研究所 | A kind of distributed feedback laser and preparation method thereof, distributed feedback laser array |
| CN106785829A (en) * | 2017-01-10 | 2017-05-31 | 中国科学院长春光学精密机械与物理研究所 | A kind of distributed feedback laser and preparation method thereof, distributed feedback laser array |
| CN109560464A (en) * | 2017-09-26 | 2019-04-02 | 北京万集科技股份有限公司 | A kind of 1xN type single-chip integration formula semiconductor main oscillations amplifier |
| CN109599743A (en) * | 2018-11-23 | 2019-04-09 | 中国科学院半导体研究所 | Pyramidal photonic crystal laser based on photonic crystal defect state scheme control |
| CN109861079B (en) * | 2019-01-08 | 2021-02-23 | 中国科学院半导体研究所 | Microstructure laser-based one-dimensional radar scanning and transmitting device and preparation method |
| CN109861079A (en) * | 2019-01-08 | 2019-06-07 | 中国科学院半导体研究所 | One-dimensional radar scanning emitter and preparation method based on micro-structure laser |
| CN110824614A (en) * | 2019-11-19 | 2020-02-21 | 东南大学 | Transverse magnetic mode cut-off transverse electric mode equipartition optical power divider based on three-coupling waveguide |
| CN110824614B (en) * | 2019-11-19 | 2020-11-03 | 东南大学 | Transverse magnetic mode cut-off transverse electric mode equipartition optical power divider based on three-coupling waveguide |
| CN112421378A (en) * | 2020-11-18 | 2021-02-26 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser |
| CN112421378B (en) * | 2020-11-18 | 2022-02-08 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser |
| CN115021823A (en) * | 2021-03-04 | 2022-09-06 | 华为技术有限公司 | Modulation amplifier, light emitting device, optical network unit and optical line terminal |
| CN115021823B (en) * | 2021-03-04 | 2024-05-03 | 华为技术有限公司 | Modulation amplifier, optical transmitter, optical network unit, and optical line terminal |
| CN113206441A (en) * | 2021-04-30 | 2021-08-03 | 中国科学院半导体研究所 | Main oscillation power amplification laser and preparation method thereof |
| CN115275785A (en) * | 2022-09-27 | 2022-11-01 | 潍坊先进光电芯片研究院 | Semiconductor laser array structure |
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