CN106785829B - A kind of distributed feedback laser and preparation method thereof, distributed feedback laser array - Google Patents
A kind of distributed feedback laser and preparation method thereof, distributed feedback laser array Download PDFInfo
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- CN106785829B CN106785829B CN201710018822.6A CN201710018822A CN106785829B CN 106785829 B CN106785829 B CN 106785829B CN 201710018822 A CN201710018822 A CN 201710018822A CN 106785829 B CN106785829 B CN 106785829B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
Abstract
The application provides a kind of distributed feedback laser and preparation method thereof, distributed feedback laser array, and distributed feedback laser is that gain couples distributed feedback laser, includes at least: substrate, periodical semiconductor devices, active layer, light wave guide groove；Since gain coupling distributed feedback laser can realize single longitudinal mode lasing directly at bragg wavelength, not stringent to end face requirement, temperature stability is high, saves energy.In addition, excitation wavelength meets formula in distributed feedback laser: Neff* λ/2 Λ=N*, wherein N is the wavelength rank of lasing, N is the positive integer greater than 2, namely provided by the invention is high-order distributed feedback laser, order is higher, and screen periods are longer, processing dimension is bigger, tolerance is made to improve it, and then can be to avoid secondary epitaxy technique is used, only with techniques such as conventional photoetching, etchings, it reduces the production cost, mass production and commercialization easy to accomplish.
Description
Technical field
The present invention relates to semiconductor laser field more particularly to a kind of distributed feedback laser and its production sides
Method, distributed feedback laser array.
Background technique
Traditional distributed feedback laser (Distributed Feedback Laser) is widely used in laser communications, Internet of Things, internet, space
The fields such as communication, hydrospace detection.Currently, requirement of the people to the operation wavelength and work line width of Distributed Feedback Laser is higher and higher, it is all
Such as demand of laser acquisition, wavelength-division multiplex field to the laser of single longitudinal mode tunable wave length is growing.
Due to existing laser there is with electric current seeded wavelength drift about it is larger, be difficult to realize the problems such as single longitudinal mode operation,
It is not able to satisfy the demand of many application fields.For the operating mode and longitudinal mode select permeability for solving regulation Distributed Feedback Laser, usually make
Method has: cooperating the DFB structure of four/wavelength phase shift using the optical grating construction of index-coupled, or uses second order light
The structure of grid and sampled-grating cooperation.
Due to the above method be usually pass through introduce single order or high-order optical grating construction be optically directed to a certain wave band into
Row feedback is allowed to lasing, and inhibits other optical modes, to accomplish selected and longitudinal mode the selection of operating mode, is easy in this way
Cause device itself that cannot need by the interference of Fabry-P é rot (FP) mode of resonance, thus when production in device
Both ends prepare anti-reflection film, lead to the bilateral lasing of device, have half energy to be wasted.Simultaneously as low order raster size compared with
Small, difficulty of processing is big, needs to carry out processing preparation using secondary epitaxy technique, and higher cost causes device to be difficult to high-volume raw
It produces and is commercialized, seriously hinder the application of Distributed Feedback Laser.
Summary of the invention
In view of this, the present invention provides a kind of distributed feedback laser and preparation method thereof, distributed feedback laser array,
It is big to solve distributed feedback laser difficulty of processing in the prior art, it needs to cause asking for higher cost using secondary epitaxy technique
Topic.
To achieve the above object, the invention provides the following technical scheme:
A kind of distributed feedback laser, the distributed feedback laser are that gain couples distributed feedback laser, at least
Include:
Substrate, periodical semiconductor devices, active layer, light wave guide groove；
The excitation wavelength of the gain coupling distributed feedback laser meets formula:
Neff* λ/2 Λ=N*
Wherein, λ is the operation wavelength of laser, and Λ is Bragg grating period, NeffFor optical waveguide effective refractive index, N is
The wavelength rank of lasing, wherein N is the positive integer greater than 2.
The present invention also provides a kind of distributed feedback laser, the distributed feedback laser is that gain coupling distributed feed-back swashs
Light device, includes at least:
Substrate；
Periodical light blocking layer on the substrate；
Deviate from the transparent dielectric layer of the substrate surface positioned at the periodical light blocking layer, is opened up on the transparent dielectric layer
There is light wave guide groove；
It covers the transparent dielectric layer and fills the active layer of the light wave guide groove；
The excitation wavelength of the gain coupling distributed feedback laser meets formula:
Neff* λ/2 Λ=N*
Wherein, λ is the operation wavelength of laser, and Λ is Bragg grating period, NeffFor optical waveguide effective refractive index, N is
The wavelength rank of lasing, wherein N is the positive integer greater than 2.
The present invention also provides a kind of production methods of distributed feedback laser, swash for making distributed feed-back recited above
Light device, comprising:
Substrate is provided；
Fabrication cycle semiconductor devices or periodical light blocking layer；
Production forms active layer；
The substrate, the periodical semiconductor devices electrode layer or periodical light blocking layer or the active layer on
Make light wave guide groove；
Wherein, the substrate, the periodical semiconductor devices or periodical light blocking layer, the active layer and described are made
The manufacture craft used when light wave guide groove includes plated film, lithography and etching technique.
The present invention also provides a kind of distributed feedback laser array, the distributed feedback laser is that gain coupling distribution is anti-
Laser is presented, is included at least:
Substrate, active layer, light wave guide groove array and curved waveguide；
The excitation wavelength of the gain coupling distributed feedback laser meets formula:
Neff* λ/2 Λ=N*
Wherein, λ is the operation wavelength of laser, and Λ is Bragg grating period, NeffFor optical waveguide effective refractive index, N is
The wavelength rank of lasing, wherein N is the positive integer greater than 2；
One end of the curved waveguide is separately connected the light wave guide groove in the light wave guide groove array, and the other end is combined into one
It is a, realize wavelength-division multiplex or light network.
It can be seen via above technical scheme that distributed feedback laser provided by the invention is that gain coupling distributed feed-back swashs
Light device leads to the refractive index of the gain media in resonant cavity since gain coupling distributed feedback laser is based on periodic gain
Imaginary part is spatially at periodic arrangement, so as to cause the light feedback in resonant cavity.Gain couples distributed feedback laser can be with
Single longitudinal mode lasing is realized directly at bragg wavelength, and hardly fed back due to caused by refractive index real part by end face etc. or
The influence of uncertain phase, thus it is not stringent to end face requirement, it can realize that single side go out light and increase lasing power by plated film, and
And temperature stability is high, to solve the bilateral lasing of device in the prior art, there is the problem of half energy is wasted.
Simultaneously as excitation wavelength meets formula in distributed feedback laser provided by the invention: Neff* λ/2 Λ=N*,
Wherein, N is the wavelength rank of lasing, and it is high-order that N, which is greater than 2 positive integer namely distributed feedback laser provided by the invention,
Distributed feedback laser, order is higher, and screen periods are longer, and processing dimension is bigger, to improve distributed feedback laser
Tolerance is made, and then system can be realized only with techniques such as conventional photoetching, etchings to avoid secondary epitaxy technique is used
Make, reduces the cost of manufacture of distributed feedback laser, mass production and commercialization easy to accomplish.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of three dimensional structure diagram for distributed feedback laser that the embodiment of the present invention one provides；
Fig. 2 is a kind of two-dimensional structure schematic diagram in distributed feedback laser section that the embodiment of the present invention one provides；
Fig. 3 is a kind of three dimensional structure diagram of distributed feedback laser provided by Embodiment 2 of the present invention；
Fig. 4 is a kind of two-dimensional structure schematic diagram in distributed feedback laser section provided by Embodiment 2 of the present invention；
Fig. 5 is a kind of three dimensional structure diagram for distributed feedback laser that the embodiment of the present invention three provides；
Fig. 6 is a kind of two-dimensional structure schematic diagram in distributed feedback laser section that the embodiment of the present invention three provides；
Fig. 7 is a kind of three dimensional structure diagram for distributed feedback laser that the embodiment of the present invention four provides；
Fig. 8 is a kind of two-dimensional structure schematic diagram in distributed feedback laser section that the embodiment of the present invention four provides；
A kind of distributed feedback laser array that Fig. 9 provides for the embodiment of the present invention five, three before preparing active layer
Tie up structural schematic diagram；
Figure 10 is a kind of distributed feedback laser array that the embodiment of the present invention five provides, the three-dimensional after completing device preparation
Structural schematic diagram.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Inventor has found although Gain-coupled DFB lasers can solve laser in the prior art in practice process
Bilateral lasing has the problem of half energy is wasted, but is typically only capable to prepare second order grating near active area, passes through system
Standby periodic structure and adjusting doping component, realize the compound working condition of a kind of gain coupling and index-coupled, but this is just
Secondary epitaxy technique and complicated technology of preparing are still needed when resulting in laser fabrication.And due to current periodic structure
Size is smaller, processes still heavy dependence electron beam lithography, and cost is complicated and high, is unfavorable for practical and commercialization.
Further, since structure and technologic limitation, it is difficult to the influence of index-coupled effect is excluded, thus technology develops slowly.
Based on this, the present invention provides a kind of distributed feedback laser, and the distributed feedback laser is gain coupling distribution
Feedback laser includes at least:
Substrate, periodical semiconductor devices, active layer, light wave guide groove；
The excitation wavelength of the gain coupling distributed feedback laser meets formula:
Neff* λ/2 Λ=N*
Wherein, λ is the operation wavelength of laser, and Λ is Bragg grating period, NeffFor optical waveguide effective refractive index, N is
The wavelength rank of lasing, wherein N is the positive integer greater than 2.
It should be noted that the periodicity semiconductor devices is described in distributed feedback laser provided by the invention
The extending direction periodic arrangement of light wave guide groove, so that the separate pumping electrode of waveguide, so that laser is inside waveguide
It when transmission, is influenced by pumping electrode smaller, and then reduces loss of laser when transmitting in the waveguide.
In addition, not limiting the concrete form of pumping configuration in the present invention, it can be electric pump structure and be also possible to optical pumping
Structure.When pumping configuration is electric pump structure, the present invention does not limit the concrete form of the periodical semiconductor devices, can be with
It is the audion for including grid, source electrode and drain electrode, is also possible to LED (Light-Emitting Diode, diode) knot
Structure or OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) structure, the present invention in this is not done
It limits.
The present invention also provides a kind of distributed feedback laser of optical pumping structure, the distributed feedback laser is gain coupling
Distributed feedback laser is closed, is included at least:
Substrate；
Periodical light blocking layer on the substrate；
Deviate from the transparent dielectric layer of the substrate surface positioned at the periodical light blocking layer, is opened up on the transparent dielectric layer
There is light wave guide groove；
It covers the transparent dielectric layer and fills the active layer of the light wave guide groove；
The excitation wavelength of the gain coupling distributed feedback laser meets formula:
Neff* λ/2 Λ=N*
Wherein, λ is the operation wavelength of laser, and Λ is Bragg grating period, NeffFor optical waveguide effective refractive index, N is
The wavelength rank of lasing, wherein N is the positive integer greater than 2.
Distributed feedback laser provided by the invention is that gain couples distributed feedback laser, since gain coupling distribution is anti-
It presents laser and is based on periodic gain, cause the imaginary index of the gain media in resonant cavity spatially at periodical row
Column, so as to cause the light feedback in resonant cavity.Gain coupling distributed feedback laser can be realized directly at bragg wavelength
Single longitudinal mode lasing, and hardly fed back due to caused by refractive index real part by end face etc. or uncertain phase is influenced, because
And it is not stringent to end face requirement, it can realize that single side go out light and increase lasing power by plated film, and temperature stability is high, thus
It solves the bilateral lasing of device in the prior art, there is the problem of half energy is wasted.
Simultaneously as excitation wavelength meets formula in distributed feedback laser provided by the invention: Neff* λ/2 Λ=N*,
Wherein, N is the wavelength rank of lasing, and it is high-order that N, which is greater than 2 positive integer namely distributed feedback laser provided by the invention,
Distributed feedback laser, order is higher, and screen periods are longer, and processing dimension is bigger, to improve distributed feedback laser
Tolerance is made, and then system can be realized only with techniques such as conventional photoetching, etchings to avoid secondary epitaxy technique is used
Make, so that the cost of manufacture of distributed feedback laser is reduced, mass production and commercialization easy to accomplish.
Distributed feedback laser provided by the invention is described in detail below by specific embodiment.
Embodiment one
Referring to Figure 1 and Fig. 2, Fig. 1 are a kind of three dimensional structure diagram of distributed feedback laser provided in this embodiment；
Fig. 2 is a kind of two-dimensional structure schematic diagram in distributed feedback laser section provided in this embodiment；The distributed feedback laser
Distributed feedback laser is coupled for gain, is included at least: substrate, periodical semiconductor devices, active layer, light wave guide groove；Institute
The excitation wavelength for stating gain coupling distributed feedback laser meets formula:
Neff* λ/2 Λ=N*
Wherein, λ is the operation wavelength of laser, and Λ is Bragg grating period, NeffFor optical waveguide effective refractive index, N is
The wavelength rank of lasing, wherein N is the positive integer greater than 2.
Periodicity semiconductor devices described in the present embodiment is triode.Specific as depicted in figs. 1 and 2, distributed feed-back swashs
Light device includes: substrate 11；Grid 12 positioned at 11 surface of substrate；Deviate from the transparent insulating layer on 11 surface of substrate positioned at grid 12
13, the side on transparent insulating layer 13 away from grid 12 offers light wave guide groove 16；Deviate from grid 12 positioned at transparent insulating layer 13
Surface, and be located at 16 liang of 16 extending directions of lateral edge optical waveguide slot of light wave guide groove periodic arrangement source electrode 14 and drain electrode 15；
Deviate from the surface of transparent insulating layer 13 positioned at source electrode 14, drain electrode 15, and fills the active layer 17 of light wave guide groove 16；Cover active layer
17 top covering 18.
Do not limited in the present embodiment substrate 11, grid 12, transparent insulating layer 13, source electrode 14, drain electrode 15, active layer 17 and on
The material of covering 18 can be used according to practical structures and material property selection, illustratively be provided in the present embodiment below
The production method of distributed feedback laser, following material and making step are only practical examples, to material of the invention and production
Step is without limitation.
The production method of the distributed feedback laser provided in the present embodiment includes:
Step 1: preparing the chromium of one layer of 100nm as grid 12 by magnetron sputtering mode in quartz substrate 11.
Step 2: by PECVD, (Plasma Enhanced Chemical Vapor Deposition, plasma increase
Extensive chemical vapour deposition process) mode grows the SiO2 of 200nm thickness as transparent insulating layer 13.
Step 3: preparing 10nm chromium and 50nm gold by magnetron sputtering mode, then pass through light on transparent insulating layer 13
It carves, etching mode prepares source electrode 14 and drain electrode 15.Source electrode 14 and the periods lambda of drain electrode 15 meet: Neff* λ/2 Λ=N*, wherein λ
For the operation wavelength of laser, Λ is Bragg grating period, NeffFor optical waveguide effective refractive index, N is the wavelength rank of lasing
Number, wherein N is the positive integer greater than 2.
Step 4: preparing light wave guide groove 16 by way of alignment, etching.
Step 5: solution spin-coating method or high vacuum thermal evaporation method is used to prepare 200nm organic film as gain media 17,
Gain media 17 is active layer 17.
Step 6: preparing the ZnS of thickness 100nm at a temperature of 25-100 DEG C as protectiveness top covering 18.
In the present embodiment, the processing of metal and medium and the active layer processing sequence of organic film are separately carried out, and right
The metal and medium for needing high temperature to prepare first are processed, and the rear preparation for carrying out organic film can protect the change of organic film
It learns property and stablizes constant, not only contribute to the preparation of organic chip, and be conducive to be mass produced and be commercialized.
Embodiment two
Fig. 3 and Fig. 4 are referred to, Fig. 3 is a kind of three dimensional structure diagram of distributed feedback laser provided in this embodiment；
Fig. 4 is a kind of two-dimensional structure schematic diagram in distributed feedback laser section provided in this embodiment；The distributed feedback laser
Distributed feedback laser is coupled for gain, is included at least: substrate, periodical semiconductor devices, active layer, light wave guide groove；Institute
The excitation wavelength for stating gain coupling distributed feedback laser meets formula:
Neff* λ/2 Λ=N*
Wherein, λ is the operation wavelength of laser, and Λ is Bragg grating period, NeffFor optical waveguide effective refractive index, N is
The wavelength rank of lasing, wherein N is the positive integer greater than 2.
Periodicity semiconductor devices described in the present embodiment is triode.Specific as shown in Figure 3 and Figure 4, distributed feed-back swashs
Light device includes: substrate 21, offers light wave guide groove 26 on a surface of substrate 21；Light wave guide groove 26 is offered positioned at substrate 21
Surface, and be located at 26 liang of 26 extending directions of lateral edge optical waveguide slot of light wave guide groove periodic arrangement source electrode 24 and drain electrode 25；
Deviate from the surface of substrate positioned at source electrode 24, drain electrode 25, and fills the active layer 27 of light wave guide groove 26；Cover the transparent of active layer 27
Insulating layer 23；Cover the grid 22 of transparent insulating layer 23.
Do not limited in the present embodiment substrate 21, grid 22, transparent insulating layer 23, source electrode 24, drain electrode 25, active layer 27 and on
The material of covering 28 can be used according to practical structures and material property selection, illustratively be provided in the present embodiment below
The production method of distributed feedback laser, following material and making step are only practical examples, to material of the invention and production
Step is without limitation.
The production method of the distributed feedback laser provided in the present embodiment includes:
Step 1: preparing 10nm chromium and 50nm gold by magnetron sputtering mode, then pass through photoetching, quarter in quartz substrate 21
Erosion mode prepares source electrode 24 and drain electrode 25.Source electrode 24 and the periods lambda of drain electrode 25 meet: Neff* λ/2 Λ=N*, wherein λ is sharp
The operation wavelength of light device, Λ are Bragg grating period, NeffFor optical waveguide effective refractive index, N is the wavelength rank of lasing,
In, N is the positive integer greater than 2.
Step 2: preparing light wave guide groove 26 by way of alignment, etching.
Step 3: spin coating 200nm perovskite quantum dot film is used as gain media 27, gain media 27 is active layer
27。
Step 4: do not destroy the above material properties at a temperature of prepare magnesium fluoride 300nm be used as in transparent insulating layer 23.
Step 5: preparing 10nm chromium and 100nm gold conduct by magnetron sputtering mode on magnesium fluoride transparent insulating layer 23
Grid 22.
For grid in top surface, such processing step reduces a step alignment and quarter for embodiment one in the present embodiment
Erosion, process flow become simply, to effectively reduce production cost.
Embodiment three
Fig. 5 and Fig. 6 are referred to, Fig. 5 is a kind of three dimensional structure diagram of distributed feedback laser provided in this embodiment；
Fig. 6 is a kind of two-dimensional structure schematic diagram in distributed feedback laser section provided in this embodiment；The distributed feedback laser
Distributed feedback laser is coupled for gain, is included at least: substrate, periodical semiconductor devices, active layer, light wave guide groove；Institute
The excitation wavelength for stating gain coupling distributed feedback laser meets formula:
Neff* λ/2 Λ=N*
Wherein, λ is the operation wavelength of laser, and Λ is Bragg grating period, NeffFor optical waveguide effective refractive index, N is
The wavelength rank of lasing, wherein N is the positive integer greater than 2.
Periodicity semiconductor devices described in the present embodiment is Organic Light Emitting Diode OLED.Specifically such as Fig. 5 and Fig. 6 institute
Show, distributed feedback laser includes: substrate 31；Periodic electrodes 39 positioned at 31 surface of substrate；It is carried on the back positioned at periodic electrodes 39
The first transparency conducting layer 3101 from 31 surface of substrate, the first transparency conducting layer 3101 are opened up away from the surface of periodic electrodes 39
There is light wave guide groove 36；Cover the active layer 37 of the first transparency conducting layer 3101 and filling light wave guide groove 36；It is carried on the back positioned at active layer 37
The second transparency conducting layer 3102 from 31 surface of substrate；Deviate from the face electrode 311 of active layer positioned at the second transparency conducting layer 3102.
It should be noted that can also make top covering in the present embodiment on face electrode 311, whether the top covering is made
Make, can be selected depending on actual conditions.
Substrate 31, periodic electrodes 39, active layer 37, the first transparency conducting layer 3101, second are not limited in the present embodiment
The material of transparency conducting layer 3102 and face electrode 311 can use according to practical structures and material property selection, illustrate one below
The production method of the distributed feedback laser provided in lower the present embodiment, following material and making step are only practical examples, right
Material and making step of the invention is without limitation.
The production method of the distributed feedback laser provided in the present embodiment includes:
Step 1: preparing 10nm chromium and 50nm gold by magnetron sputtering mode, then pass through photoetching, quarter in quartz substrate 31
Erosion mode manufacturing cycle electrode 39.The periods lambda of periodic electrodes 39 meets: Neff* λ/2 Λ=N*, wherein λ is laser
Operation wavelength, Λ is Bragg grating period, NeffFor optical waveguide effective refractive index, N is the wavelength rank of lasing, wherein N
For the positive integer greater than 2.
Step 2: the ITO for preparing 300nm thickness is carried on the back as the first transparency conducting layer 3101 in the first transparency conducting layer 3101
Surface from periodic electrodes 39 offers light wave guide groove 36.
Step 3: preparing 100nm carbon nanocapsule thin film by collosol and gel mode, then spin coating 100nm organic light emitting film is total to
With gain media 37 is used as, gain media 37 is active layer 37.
Step 4: spin coating 300nm electrically conducting transparent high molecular material is as the second transparency conducting layer on gain media 37
3102。
Step 5: making on the second transparency conducting layer 3102 in the at a temperature of vapor deposition 100nm silver for not destroying the above material properties
For face electrode 311.
Two kinds of gain materials are used in the present embodiment, are not only contributed to device work in double wave long status, are also helped benefit
With the nonlinear characteristic of material, realize that stable difference frequency, sum of fundamental frequencies etc. are applied；By adjusting Refractive Index of Material duct thickness, effectively
Refractive index can also carry out wavelength tuning.
Example IV
Fig. 7 and Fig. 8 are referred to, Fig. 7 is a kind of three dimensional structure diagram of distributed feedback laser provided in this embodiment；
Fig. 8 is a kind of two-dimensional structure schematic diagram in distributed feedback laser section provided in this embodiment；Distributed feed-back in the present embodiment
The pumping configuration of laser is optical pumping structure, as shown in Figure 7 and Figure 8, including substrate 41；Periodical gear on substrate 41
Photosphere 412；Deviate from the transparent dielectric layer 413 on 41 surface of substrate positioned at periodical light blocking layer 412, is opened up on transparent dielectric layer 413
There is light wave guide groove 46；Covering transparent dielectric layer 413 and the active layer 47 for filling light wave guide groove 46.
The excitation wavelength of gain coupling distributed feedback laser meets formula:
Neff* λ/2 Λ=N*
Wherein, λ is the operation wavelength of laser, and Λ is Bragg grating period, NeffFor optical waveguide effective refractive index, N is
The wavelength rank of lasing, wherein N is the positive integer greater than 2.
The material of substrate 41, periodical light blocking layer 412, transparent dielectric layer 413, active layer 47 is not limited in the present embodiment,
It can be used according to practical structures and material property selection, the distributed feedback laser illustratively provided in the present embodiment below
Production method, following material and making step are only practical examples, without limitation to material and making step of the invention.
The production method of the distributed feedback laser provided in the present embodiment includes:
Step 1: preparing 100nm chromium by magnetron sputtering mode, then pass through photoetching, etching mode system in quartz substrate 41
Standby periodicity light blocking layer 412.The periods lambda of periodical light blocking layer 412 meets: Neff* λ/2 Λ=N*, wherein λ is laser
Operation wavelength, Λ are Bragg grating period, NeffFor optical waveguide effective refractive index, N is the wavelength rank of lasing, wherein N is
Positive integer greater than 2.
Step 2: preparing the SiO2 of 1000nm thickness as transparent dielectric layer 413.
Step 3: preparing 100nm carbon nanocapsule thin film, then spin coating 100nm organic light emitting film by collosol and gel mode, most
After prepare 100nm quantum dot film collectively as gain media 47, gain media 47 is active layer 47.
The present embodiment is optical pumping, the light field week since optical pumping is under the action of periodical light blocking layer 412, in optical waveguide
The distribution of phase property, forms periodic gain and lasing goes out light, and the present embodiment uses three kinds of materials as gain media 47, not only favorably
It works in device in three wavelength states, for example is directly realized by white light laser from single device, and prepare simple, at low cost
It is honest and clean, the process-cycle is short, either scientific research, which still produces, can obtain rapidly expected results.
Embodiment five
The embodiment of the present invention also provides a kind of distributed feedback laser array, wherein the distributed feedback laser is gain
Distributed feedback laser is coupled, is included at least: substrate, active layer, light wave guide groove array and curved waveguide；Gain coupling distribution
The excitation wavelength of feedback laser meets formula:
Neff* λ/2 Λ=N*
Wherein, λ is the operation wavelength of laser, and Λ is Bragg grating period, NeffFor optical waveguide effective refractive index, N is
The wavelength rank of lasing, wherein N is the positive integer greater than 2；One end of curved waveguide is separately connected the light in light wave guide groove array
Waveguide slot, the other end are combined into one, realize wavelength-division multiplex or light network.
Fig. 9 and Figure 10 are referred to, Fig. 9 is a kind of distributed feedback laser array provided in this embodiment, active preparing
Three dimensional structure diagram before layer；Figure 10 is a kind of distributed feedback laser array provided in this embodiment, completes device system
Three dimensional structure diagram after standby.
The main production method of distributed feedback laser array includes: in the present embodiment
Step 1: preparing the chromium of one layer of 100nm as grid 52 by magnetron sputtering mode in quartz substrate 51.
It should be noted that the material of substrate 51 may be other materials, do not limited this in the present embodiment.And grid
The production method of pole 52 can be magnetron sputtering mode, or other modes, in the present embodiment equally without limitation to this.
Step 2: growing the SiO2 of 200nm thickness as transparent insulating layer 53 by PECVD mode.
Step 3: preparing 10nm chromium and 50nm gold by magnetron sputtering mode, then pass through light on transparent insulating layer 53
It carves, the array structure of etching mode manufacturing cycle source electrode 54 and drain electrode 55.Periodical source electrode 54 and the periods lambda of drain electrode 55 are full
Foot: Neff* Λ=N* λi/ 2, wherein i=1,2,3,4,5；λiIt is the operation wavelength of i-th of array element, Λ is Bragg grating
Period, NeffFor optical waveguide effective refractive index, N is the wavelength rank of lasing, wherein N is the positive integer greater than 2.
Step 4: preparing the array and curved waveguide 514 of light wave guide groove 56 by way of alignment, etching.
Step 5: preparing the molecular film conduct of 100nm doping metals erbium (symbol of element Er) by collosol and gel mode
Gain media 57, the gain media 57 are active layer.
Step 6: do not destroy the above material properties at a temperature of prepare ZnS thickness 100nm as protectiveness top covering
58。
Step 7: exposing grid 52, source electrode 54 and drain electrode 55 by alignment mode, carry out and external electrical contact.
Distributed feedback laser is fabricated to array structure in the present embodiment, is connected by curved waveguide 514, the present embodiment
In array structure, the wavelength of each unit of array device by adjusting the cycle length of each unit, can be realized according to setting
Meter requires slightly have difference, uses advantageous as wavelength division multiplex device or light network device, promotes on-chip optical interconnection and optic communication
The development in field.
It should be noted that being illustrated so that semiconductor periodical in electric pump is audion as an example in the present embodiment point
The structure of cloth feedback laser array to those skilled in the art can also be on the basis of the embodiment of the present invention, not
On the basis of making the creative labor, the distributed feedback laser array of other electric pump structures or optical pumping structure is obtained, this
This is not described in detail in embodiment.
It can be seen that the production method master of various distributed feedback lasers provided in the present invention from above-mentioned each embodiment
Want the following steps are included:
Substrate is provided；
Fabrication cycle semiconductor devices or periodical light blocking layer；
Production forms active layer；
The substrate, the periodical semiconductor devices electrode layer or periodical light blocking layer or the active layer on
Make light wave guide groove；
Wherein, the substrate, the periodical semiconductor devices or periodical light blocking layer, the active layer and described are made
The manufacture craft used when light wave guide groove includes plated film, lithography and etching technique.
That is, due in distributed feedback laser provided by the invention excitation wavelength meet formula: Neff* λ/2 Λ=N*,
Wherein, N is the wavelength rank of lasing, and it is high-order that N, which is greater than 2 positive integer namely distributed feedback laser provided by the invention,
Distributed feedback laser, order is higher, and screen periods are longer, and processing dimension is bigger, to improve distributed feedback laser
Tolerance is made, and then system can be realized only with techniques such as conventional photoetching, etchings to avoid secondary epitaxy technique is used
Make, so that the cost of manufacture of distributed feedback laser is reduced, mass production and commercialization easy to accomplish.
In conclusion distributed feedback laser provided by the invention has at least the following advantages:
1, receiving end face is not rung: having benefited from basic principle-periodic modulation refractive index of Gain-coupled DFB lasers
Selection of the imaginary part to mode characteristic, compared with the existing technology in distributed feedback laser for, the present invention due to refractive index reality
The reflection that portion introduces is negligible, because without by end face cleavage due to generate uncertain phase difference and influence, longitudinal mode stability of characteristics,
Single side lasing can be realized by plated film, to increase laser output power.
2, production tolerance is big: compared to the technical matters of the Nano grades such as electron beam lithography, high-order gain coupling of the invention
The preparation tolerance of DFB edge-emitting laser is closed in micron dimension.Tolerance improve nearly thousand times, can be used common litho machine and usually
Prepared by photolithography plate, without complicated electron beam lithography technique or secondary epitaxy technique, greatly reduce cost of manufacture, and
And large-scale production can be particularly suitable for large-area manufacturing, and manufacture craft is simple, and it is low in cost, it is suitble to commercial applications.
3, have wide range of applications: high-order gain coupling DFB edge-emitting laser of the invention can integrate in other laser
In device, go out light frequency for example as seed source, or for stable laser.When preparing a variety of active area materials and structure, by
Meet the Bragg condition of different rank respectively in different wavelength, the present invention can work in dual wavelength or multi-wavelength work
State generates phase difference stable dual wavelength or multiwavelength laser.If the optical waveguide material for cooperating nonlinear factor bigger
Material, then may be implemented various nonlinear effects, such as sum of fundamental frequencies, difference frequency, frequency multiplication etc., generates Terahertz particularly through difference frequency and swashs
Light.The present invention can widen the function and application field of common DFB edge-emitting laser significantly.
4, cooperate fiber coupling application: high-order gain coupling DFB edge-emitting laser of the invention can integrate in quartz
Etc. in optical substrates, be particularly suitable for carrying out array preparation, by adjusting the period of each device in array, and engagement flex wave
Guide structure carries out on piece and closes beam, and wavelength multiplexing may be implemented, and realizes array for light network, optical oomputing and optical-fibre communications field
Quickly tuning.
It should be noted that all the embodiments in this specification are described in a progressive manner, each embodiment weight
Point explanation is the difference from other embodiments, and the same or similar parts between the embodiments can be referred to each other.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (9)
1. a kind of distributed feedback laser, which is characterized in that the distributed feedback laser is that gain couples the distribution feedback laser
Device includes at least:
Substrate, periodical semiconductor devices, active layer, light wave guide groove, the periodicity semiconductor devices are triode or shine
Diode；
The excitation wavelength of the gain coupling distributed feedback laser meets formula:
Neff* λ/2 Λ=N*
Wherein, λ is the operation wavelength of laser, and Λ is the period of the periodical semiconductor devices, NeffIt is effectively rolled over for optical waveguide
Rate is penetrated, N is the wavelength rank of lasing, wherein N is the positive integer greater than 2.
2. distributed feedback laser according to claim 1, which is characterized in that the periodicity semiconductor devices is described in
The extending direction periodic arrangement of light wave guide groove.
3. distributed feedback laser according to claim 2, which is characterized in that the periodicity semiconductor devices is three poles
Pipe.
4. distributed feedback laser according to claim 3 characterized by comprising
Substrate；
Positioned at the grid of the substrate surface；
Deviate from the transparent insulating layer of the substrate surface positioned at the grid, deviates from the one of the grid on the transparent insulating layer
Side offers light wave guide groove；
Deviate from the surface of the grid positioned at the transparent insulating layer, and is located at light wave guide groove two sides along the light wave guide groove
The source electrode and drain electrode of the periodic arrangement of extending direction；
Deviate from the surface of the transparent insulating layer positioned at the source electrode, the drain electrode, and fills the active layer of the light wave guide groove；
Cover the top covering of the active layer.
5. distributed feedback laser according to claim 3 characterized by comprising
Substrate offers light wave guide groove on one surface of the substrate；
The surface of the light wave guide groove is offered positioned at the substrate, and is located at light wave guide groove two sides along the light wave guide groove
The source electrode and drain electrode of the periodic arrangement of extending direction；
Deviate from the surface of the substrate positioned at the source electrode, the drain electrode, and fills the active layer of the light wave guide groove；
Cover the transparent insulating layer of the active layer；
Cover the grid of the transparent insulating layer.
6. distributed feedback laser according to claim 2, which is characterized in that the periodicity semiconductor devices is luminous
Diode.
7. distributed feedback laser according to claim 6 characterized by comprising
Substrate；
Positioned at the periodic electrodes of the substrate surface；
Deviate from the first transparency conducting layer of the substrate surface positioned at the periodic electrodes, first transparency conducting layer deviates from
The surface of the periodic electrodes offers light wave guide groove；
It covers first transparency conducting layer and fills the active layer of the light wave guide groove；
Deviate from the second transparency conducting layer of the substrate surface positioned at the active layer；
Deviate from the face electrode of the active layer positioned at second transparency conducting layer.
8. a kind of production method of distributed feedback laser, which is characterized in that for making described in claim 1-7 any one
Distributed feedback laser, comprising:
Substrate is provided；
Fabrication cycle semiconductor devices；
Production forms active layer；
The substrate, the periodical semiconductor devices electrode layer or the active layer on make light wave guide groove；
Wherein, the system used when making the substrate, the periodical semiconductor devices, the active layer and the light wave guide groove
It include plated film, lithography and etching technique as technique.
9. a kind of distributed feedback laser array, which is characterized in that the distributed feedback laser is that gain couples distributed feed-back
Laser includes at least:
Substrate, active layer, light wave guide groove array, triode and curved waveguide；
The excitation wavelength of the gain coupling distributed feedback laser meets formula:
Neff* λ/2 Λ=N*
Wherein, λ is the operation wavelength of laser, and Λ is the period of the source electrode and drain electrode in the triode, NeffHave for optical waveguide
Refractive index is imitated, N is the wavelength rank of lasing, wherein N is the positive integer greater than 2；
One end of the curved waveguide is separately connected the light wave guide groove in the light wave guide groove array, and the other end is combined into one, in fact
Existing wavelength-division multiplex or light network.
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| CN107706741B (en) * | 2017-10-13 | 2019-10-25 | 中国科学院长春光学精密机械与物理研究所 | A kind of gain coupling distributed feedback laser series connection linear array structure |
| CN108390247B (en) * | 2018-01-31 | 2020-09-04 | 北京理工大学 | LED pumped perovskite quantum dot continuous laser |
| CN108011292A (en) * | 2017-10-27 | 2018-05-08 | 北京理工大学 | Colloidal Quantum Dots continuous wave laser and preparation method thereof |
| CN108365511B (en) * | 2018-01-31 | 2020-05-22 | 北京理工大学 | LED pumped perovskite quantum dot continuous laser and preparation method thereof |
| CN108063365B (en) * | 2017-12-12 | 2020-11-13 | 中国科学院半导体研究所 | Preparation method of electric pumping perovskite quantum dot laser |
| US10680409B2 (en) * | 2018-03-07 | 2020-06-09 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Laser device |
| CN112072471B (en) * | 2020-09-16 | 2022-04-29 | 中国科学院半导体研究所 | Monolithic integrated multi-wavelength quantum cascade laser array structure and manufacturing method thereof |
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| CN103545711A (en) * | 2013-10-22 | 2014-01-29 | 中国科学院半导体研究所 | Distributed feedback type laser device and manufacturing method thereof |
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