CN103633559B - The semi-conductor Terahertz vertical surface emitting laser of superpower low divergence - Google Patents
The semi-conductor Terahertz vertical surface emitting laser of superpower low divergence Download PDFInfo
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Abstract
A semi-conductor Terahertz vertical surface emitting laser for superpower low divergence, comprising: the reception substrate of a high doping; Metal wave-guide light limiting layer once, this lower metal wave-guide light limiting layer closes by metal hot key to be formed, and be positioned at and receive on substrate; Contact layer once, is positioned on lower metal wave-guide light limiting layer; One active layer, this active layer grows on lower contact layer; Contact layer on one, on this, contact layer grows on this active layer, and is made into geometric ratio ordered series of numbers concentric-circle grating structure quasi-periodicity; Metal level on one, on this, metal level is by electron beam evaporation on upper contact layer, and is made into geometric ratio ordered series of numbers concentric-circle grating structure quasi-periodicity; Wherein, lower metal layer and lower contact layer form lower plasma body waveguide, and upper metal level and upper contact layer form plasma waveguide, and upper and lower plasma body waveguide forms dual-surface metal waveguide structure; Described lower contact layer, active layer, upper contact layer and upper metal level are made into ring structure, and the active layer of annular defines ring resonator.
Description
Technical field
The present invention relates to terahertz wave band Laser Devices optical waveguide technique field, particularly relate to the semi-conductor Terahertz vertical surface emitting laser of superpower low divergence.
Background technology
Terahertz quantum cascaded laser is a kind of small-sized coherent source. Owing to having great application in medical science, bio-science, atmospheric sciences, safety detection, free space optical communication etc., the research of Terahertz quantum cascaded laser in recent years obtains and pays close attention to widely. Current Terahertz quantum cascaded laser can only work at a lower temperature, it is to increase the working temperature of device will be conducive to the large-scale application of device. High optical output power and low hot spot far-field divergence angle are also conducive to the practical application of device. Terahertz quantum cascaded laser mainly adopts two kinds of waveguiding structures: dual-surface metal waveguide and half insulation plasma body waveguide. Dual-surface metal waveguide structure is as a kind of important waveguiding structure, owing to having very high light limiting factor, reduce the lasing threshold of laser apparatus, decrease injecting power consumption so that the working temperature of device can be promoted greatly compared to half insulation plasma body waveguide. But due to the sub-wavelength dimensions of dual-surface metal waveguide structure in device epitaxial surface direction and high face, chamber reflectivity, dual-surface metal waveguide device is made to have big far-field divergence angle and lower output rating compared to half insulation plasma body waveguide device, improving far-field divergence angle and output rating even if adopting in methods such as laser apparatus light emitting end surface increase Si lens, the far-field divergence angle of the actual acquisition of device can not compared with half insulation plasma body waveguide device with output rating. Which also limits the practicality of dual-surface metal waveguide quanta cascade laser apparatus edge emitting device. If so the higher output rating of acquisition and little far-field divergence angle will can greatly improve the practicality of device while improving device operating temperature. Owing to the limiting factor of dual-surface metal waveguide structure is very high close to 1, it is inside the active layer of about 10 ��m that electromagnetic field is limited in thickness substantially, if producing surface metal second order grating in this kind of structure, grating will have very strong interaction with the light field in active layer, stronger face coupling efficiency can be provided, it is thus possible to obtain higher surface launching output rating compared to half insulation plasma body waveguide. This makes to make surface-emitting device in dual-surface metal waveguide structure becomes a kind of selection. Realizing the method that Terahertz dual-surface metal waveguide surface-emitting device mainly adopts on our times is etch uniform two Prague, rank distributed feed-back gratings on device metal face or produce uniform photon crystal grating structure. This kind of grating structure inherently determines the unsymmetrically pattern that the excitation mode of surface launching is electromagnetic field, owing to the unsymmetrically pattern of electromagnetic field spatially can disappear by coherent phase, this just makes the surface launching output rating of device very low, penetrating if the symmetric pattern that can make electromagnetic field obtains swashing, this just will improve the optical output power of device greatly. The resonator cavity that device is conventional is simple ridge waveguide cavity resonator structure, this kind of structure is owing to result in the asymmetric of far-field divergence angle in both directions in the ununiformity of chamber length and ridge cross direction size, device cavity length direction can effectively reduce far-field divergence angle, but still there is the bigger angle of divergence on ridge cross direction. Although the angle of divergence of device ridge cross direction can be improved by the mode of employing array, but this kind of structural manufacturing process makes complicated, is unfavorable for the extensive making of device. So researchist proposes symmetrical cavity resonator structure: sexangle photonic crystal surface emitting structural and annular chamber concentric-circle grating structure.These two kinds of structures owing to there is symmetrical size at two-dimensional directional, so far-field divergence angle can be improved in two directions. Based on above discussion, in order to obtain the high surface launching output rating of device and the low far-field spot angle of divergence, we have proposed a kind of novel device architecture. This structure adopts ring resonator to improve the hot spot far-field divergence angle of device, and simultaneously in order to improve the surface launching output rating of device, we have designed and produced a kind of novel grating structure-quasi-periodicity geometric ratio ordered series of numbers concentric-circle grating structure at device surface. Being different from traditional even two rank Bragg-grating structures, what is called geometric ratio ordered series of numbers concentric-circle grating structure quasi-periodicity refers to that its grating structure is a series of concentric-circle gratings by circle of ring resonator center, the grating cyclePresent geometric ratio ordered series of numbers mode from ring resonator center to annular resonance cavity edge to change, namelyWherein scale-up factor a < 1, namely the grating cycle diminishes from inside to outside gradually. The symmetric pattern of electromagnetic field can be concentrated on the center of annular chamber by this kind of grating structure, and the unsymmetrically pattern of electromagnetic field is pushed to the edge of ring resonator, forms a kind of photonic quantum trap phenomenon. If we add absorbing boundary condition at the edge of ring resonator, it is to increase the loss of unsymmetrically pattern, this just can make symmetric pattern obtain effectively swashing penetrating, thus greatly improves the optical output power of device. Owing to terahertz wave band wavelength is longer, this kind of grating structure carries out contact photoetching easily via making photomask blank and realizes, and technique is simple, has stronger experiment operability.
In sum, this patent proposes geometric ratio ordered series of numbers concentric-circle grating surface-emitting device structure quasi-periodicity based on ring resonator, and its unique distinction is on ring resonator to produce geometric ratio ordered series of numbers concentric-circle grating quasi-periodicity. The hot spot far-field divergence angle that this kind of structure can improve device can improve again the optical output power of device.
Summary of the invention
It is an object of the invention to, the semi-conductor Terahertz vertical surface emitting laser of a kind of superpower low divergence is provided, it adopts geometric ratio ordered series of numbers concentric-circle grating structure quasi-periodicity based on ring resonator, this kind of device architecture can improve device hot spot far field in the two-dimensional direction, form the far field bundle spot of low divergence, the surface launching output rating of device can be improved again.
The present invention provides the semi-conductor Terahertz vertical surface emitting laser of a kind of superpower low divergence, comprising:
The reception substrate of one high doping;
Metal wave-guide light limiting layer once, this lower metal wave-guide light limiting layer closes by metal hot key to be formed, and be positioned at and receive on substrate;
Contact layer once, is positioned on lower metal wave-guide light limiting layer;
One active layer, this active layer grows on lower contact layer;
Contact layer on one, on this, contact layer grows on this active layer, and is made into geometric ratio ordered series of numbers concentric-circle grating structure quasi-periodicity;
Metal level on one, on this, metal level is by electron beam evaporation on upper contact layer, and is made into geometric ratio ordered series of numbers concentric-circle grating structure quasi-periodicity;
Wherein, lower metal layer and lower contact layer form lower plasma body waveguide, and upper metal level and upper contact layer form plasma waveguide, and upper and lower plasma body waveguide forms dual-surface metal waveguide structure; Described lower contact layer, active layer, upper contact layer and upper metal level are made into ring structure, and the active layer of annular defines ring resonator.
From technique scheme it may be seen that the semi-conductor Terahertz vertical surface emitting laser of the present invention's a kind of superpower low divergence has following useful effect:
1, device adopts annular resonance cavity configuration, utilizes this kind of structure symmetry in the two-dimensional direction to improve device light beam far-field divergence angle in the two-dimensional direction.
2, based on annular resonance cavity configuration, device adopts geometric ratio ordered series of numbers concentric-circle grating quasi-periodicity, and this kind of grating can effectively make the symmetric pattern of electromagnetic field obtain sharp penetrating, it is to increase the surface launching output rating of device. And this kind of preparing grating technique is simple, has stronger experiment operability.
Accompanying drawing explanation
In order to the characteristic sum effect of the present invention is described further, below in conjunction with accompanying drawing, the present invention is described further, wherein:
Fig. 1 show Laser Devices vertical view, and device resonator cavity adopts ring resonator.
Fig. 2 is the cross sectional representation of the device of place shown in Fig. 1. What grating configuration adopted is geometric ratio ordered series of numbers concentric-circle grating structure quasi-periodicity.
Fig. 3 is the surface optical field intensity distribution of cross-section device shown in Fig. 2. Device surface place light intensity concentrates on ring resonator center, and light intensity weakens gradually to edge, forms photonic quantum trap phenomenon.
Embodiment
Referring to shown in Fig. 1 and Fig. 2, the present invention provides the semi-conductor Terahertz vertical surface emitting laser 10 of a kind of superpower low divergence, comprising:
The reception substrate 1 of one high doping, the GaAs substrate that the reception substrate 1 of described high doping adulterates for n type, doping content is 1 �� 1018-2��1018cm-3, this substrate is for carrying out metal hot key conjunction with epitaxial wafer;
Metal wave-guide light limiting layer 2 once, this lower metal wave-guide light limiting layer 2 closes by metal hot key to be formed, and be positioned at and receive on substrate 1, the material of described lower metal wave-guide light limiting layer 2 is In Au, and it adopts the hot bonding technology of dual-surface metal waveguide In/Au to prepare;
Contact layer 3 once, are positioned on lower metal wave-guide light limiting layer 2, and described lower contact layer 3 is the GaAs of the n type doping adopting the growth of MBE method, and doping content is 2 �� 1018cm-3, thickness is 0.2 ��m;
One active layer 4, this active layer 4 grows on lower contact layer 3, and described active layer 4 is by periodic GaAs/Al0.15Ga0.85As superlattice form, and totally 120 cycles, the gain frequency that this active layer 4 material structure is corresponding is 1-5THz;
Contact layer 5 on one, on this, contact layer 5 grows on this active layer 4, and is made into geometric ratio ordered series of numbers concentric-circle grating structure quasi-periodicity, and the material of described upper contact layer 5 is the GaAs of the n type doping grown by MBE, and doping content is 5 �� 1018cm-3, thickness is 0.2 ��m;
Metal level 6 on one, on this, metal level 6 is by electron beam evaporation on upper contact layer 5, and is made into geometric ratio ordered series of numbers concentric-circle grating structure quasi-periodicity, and the material of described upper metal level 6 is Ti/Au, and its thickness is 3/100nm, and with photolithography plate as mask;
The wherein grating cycle of geometric ratio quasi-periodicity ordered series of numbers concentric-circle grating structurePresent geometric ratio ordered series of numbers mode from ring resonator center to annular resonance cavity edge to change, namelyWherein scale-up factor a < 1, namely the grating cycle diminishes from inside to outside gradually. The symmetric pattern of electromagnetic field can be concentrated on the center of annular chamber by this kind of grating structure, and the unsymmetrically pattern of electromagnetic field is pushed to the edge of ring resonator, forms a kind of photonic quantum trap phenomenon. We add absorbing boundary condition at the edge of ring resonator, it is to increase the loss of unsymmetrically pattern, and this just can make symmetric pattern obtain effectively swashing penetrating, thus greatly improves the optical output power of device. Owing to terahertz wave band wavelength is longer, this kind of grating structure carries out contact lithography experiments easily via making photomask blank and realizes, and technique is simple, has stronger experiment operability.
Wherein, lower metal layer 2 and lower contact layer 3 form lower plasma body waveguide, and upper metal level 6 and upper contact layer 5 form plasma waveguide, and upper and lower plasma body waveguide forms dual-surface metal waveguide structure; Described lower contact layer 3, active layer 4, upper contact layer 5 and upper metal level 6 are made into ring structure, and the active layer 4 of annular defines ring resonator.
Referring to Fig. 3, distribution of light intensity 20 weakens from the center of laser apparatus 10 gradually to edge, forms photonic quantum trap phenomenon.
Above-described specific embodiment; the object of the present invention, technical scheme and useful effect have been further described; it is it should be understood that; the foregoing is only specific embodiments of the invention; it is not limited to the present invention; within the spirit and principles in the present invention all, any amendment of making, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a semi-conductor Terahertz vertical surface emitting laser for superpower low divergence, comprising:
The reception substrate of one high doping;
Metal wave-guide light limiting layer once, this lower metal wave-guide light limiting layer closes by metal hot key to be formed, and be positioned at and receive on substrate;
Contact layer once, is positioned on lower metal wave-guide light limiting layer;
One active layer, this active layer grows on lower contact layer;
Contact layer on one, on this, contact layer grows on this active layer, and it is made into geometric ratio ordered series of numbers concentric-circle grating structure quasi-periodicity, this, geometric ratio ordered series of numbers concentric-circle grating structure referred to a series of concentric-circle gratings of its grating by circle of ring resonator center quasi-periodicity, grating periods lambda presents geometric ratio ordered series of numbers mode from ring resonator center to annular resonance cavity edge and changes, i.e. ��b+1=a ��b, wherein scale-up factor a < 1, this geometric ratio ordered series of numbers concentric-circle grating quasi-periodicity number b >=0, namely the grating cycle diminishes from inside to outside gradually;
Metal level on one, on this, metal level is by electron beam evaporation on upper contact layer, and is made into geometric ratio ordered series of numbers concentric-circle grating structure quasi-periodicity;
Wherein, lower metal layer and lower contact layer form lower plasma body waveguide, and upper metal level and upper contact layer form plasma waveguide, and upper and lower plasma body waveguide forms dual-surface metal waveguide structure; Described lower contact layer, active layer, upper contact layer and upper metal level are made into ring structure, and the active layer of annular defines ring resonator.
2. the semi-conductor Terahertz vertical surface emitting laser of superpower low divergence according to claim 1, the reception substrate of wherein said high doping is the GaAs substrate of n type doping, and doping content is 1 �� 1018-2��1018cm-3��
3. the semi-conductor Terahertz vertical surface emitting laser of superpower low divergence according to claim 1, the material of wherein said lower metal wave-guide light limiting layer is In-Au, and it adopts the hot bonding technology of dual-surface metal waveguide In/Au to prepare.
4. the semi-conductor Terahertz vertical surface emitting laser of superpower low divergence according to claim 1, wherein said lower contact layer is the GaAs of the n type doping adopting the growth of MBE method, and doping content is 2 �� 1018cm-3, thickness is 0.2 ��m.
5. the semi-conductor Terahertz vertical surface emitting laser of superpower low divergence according to claim 1, wherein said active layer is by periodic GaAs/Al0.15Ga0.85As superlattice form, totally 120 cycles, and gain frequency corresponding to this active layer material structure is 1-5THz.
6. the semi-conductor Terahertz vertical surface emitting laser of superpower low divergence according to claim 1, the material of wherein said upper contact layer is the GaAs of the n type doping grown by MBE, and doping content is 5 �� 1018cm-3, thickness is 0.2 ��m.
7. the semi-conductor Terahertz vertical surface emitting laser of superpower low divergence according to claim 1, the material of wherein said upper metal level is Ti/Au, and its thickness is 3/100nm, and with photolithography plate as mask.
8. the semi-conductor Terahertz vertical surface emitting laser of superpower low divergence according to claim 1, wherein producing quasi-periodicity geometric ratio ordered series of numbers concentric-circle grating structure on upper contact layer and upper metal level is prepared by the method for photoetching, wet etching.
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| AU2016298390B2 (en) | 2015-07-30 | 2021-09-02 | Optipulse Inc. | Rigid high power and high speed lasing grid structures |
| JP6182230B1 (en) * | 2016-03-15 | 2017-08-16 | 株式会社東芝 | Surface emitting quantum cascade laser |
| CN107359135A (en) * | 2016-05-09 | 2017-11-17 | 中国科学院半导体研究所 | Transfer bonding structure of integrated device and preparation method thereof in Terahertz antenna sheet |
| EP3665793A4 (en) | 2017-08-11 | 2021-05-12 | Optipulse Inc. | Laser grid structures for wireless high speed data transfers |
| US10374705B2 (en) | 2017-09-06 | 2019-08-06 | Optipulse Inc. | Method and apparatus for alignment of a line-of-sight communications link |
| FR3078834B1 (en) * | 2018-03-08 | 2020-03-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | LIGHT EMITTING DEVICE COMPRISING AT LEAST ONE VCSEL AND A DIFFUSION LENS |
| CN109586146B (en) * | 2019-01-10 | 2019-10-15 | 北京邮电大学 | A kind of THz wave generator |
| CN110635353B (en) * | 2019-09-24 | 2020-08-25 | 中国科学院半导体研究所 | Terahertz semiconductor laser, and preparation method and application thereof |
| CN111106533A (en) * | 2019-12-21 | 2020-05-05 | 江西德瑞光电技术有限责任公司 | VCSEL chip and manufacturing method thereof |
| CN113258441B (en) * | 2021-06-07 | 2021-10-01 | 深圳博升光电科技有限公司 | HCG-based coherent light vertical cavity surface emitting laser and laser array |
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