CN107069432B - The preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser - Google Patents
The preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser Download PDFInfo
- Publication number
- CN107069432B CN107069432B CN201710472687.2A CN201710472687A CN107069432B CN 107069432 B CN107069432 B CN 107069432B CN 201710472687 A CN201710472687 A CN 201710472687A CN 107069432 B CN107069432 B CN 107069432B
- Authority
- CN
- China
- Prior art keywords
- layer
- preparation
- difference frequency
- cascade laser
- quantum cascade
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
- H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Semiconductor Lasers (AREA)
Abstract
A kind of preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser, includes the following steps: step 1: sequentially growing lower waveguide layer, lower optical confinement layer, the first active layer, wall, the second active layer, upper optical confinement layer and upper ducting layer on a substrate；Step 2: ducting layer in removal, it is radial on upper optical confinement layer to etch a plurality of grating downwards, form the circular grating of a binary cycle；Step 3: regrow upper ducting layer on upper optical confinement layer after etching；Step 4: etching an annular ridge structure downwards on upper ducting layer, etching depth reaches lower optical confinement layer；Step 5: semi-insulating InP:Fe is filled up in the groove of annular ridge structure after etching；Step 6: evaporation front metal electrode in the annular ridge structure of semi-insulating InP:Fe is filled up in the trench, it is gold-plated；Step 7: by substrate thinning, polishing evaporates back metal electrode at the back side of substrate；Step 8: etching metal electrode prepares second level annular surface metal grating, completes preparation.
Description
Technical field
The present invention relates to infrared semiconductor photoelectric device technical field more particularly to a kind of annular chamber surface launching difference frequency terahertzs
The hereby preparation method of quantum cascade laser.The structure is unique in that, epitaxial wafer is circularized double ditch structures, then
Second level annular metal grating is made on substrate, on the one hand, substrate second level annular metal grating structure can be in entire annular chamber model
Enclose the interior effective extraction for realizing terahertz light；On the other hand, the far field diverging of terahertz light can be improved.
Background technique
Wavelength be 30-300 μm between the infrared THz wave between microwave due to its special spectral position, make its
Light spectrum image-forming, radio astronomy, free-space communication, medical treatment and environmental monitoring etc. have broad application prospects.At present
The available high-power THz source of tradition is very limited, and some electronic devices are because by electron transit time and parasitic time constant
Limitation and be difficult to make the radiation source greater than 1THz, optical device, which is limited by material forbidden bandwidth and is difficult to make, to be less than
The radiation source of 10THz forms the Terahertz gap of so-called 1-10THz.Quantum cascade laser has energy band Scalability
The characteristics of, so sight is targeted by quantum stage naturally by efficiently portable 1-10THz Terahertz light source, researchers in order to obtain
Join laser, it is desirable to realize quantum cascade laser in the lasing of 1-10THz wave band by " cutting " of energy band.Meaning is big within 2002
Sharp scientist R ü degerEt al. successfully produced first lasing in the quantum cascade laser of terahertz wave band,
Hereafter Terahertz quantum cascaded laser develops rapidly, and the high-power output for being greater than 1W under low temperature is realized by 2015, still
It is increased with operating temperature, power declines quickly, cannot use at room temperature.Close coupling between quantum state in quantum cascade laser
Huge nonlinear effect can be generated, theoretically second order nonlinear coefficient can reach 106pm/V, than common nonlinear crystal
High four orders of magnitude, furthermore the mid-infrared light based on quantum cascade laser has been carried out the continuous high pumping function of room temperature
Rate, so the Terahertz quantum cascaded laser based on the intracavitary difference frequency of middle infrared double-wave length, which becomes, realizes the most promising of room temperature
Terahertz light source.M.A.Belkin of Harvard University in 2007 et al. is based on bound state using the matched mode of modal phase
Double active area structures to continuous state and alliteration sub-resonance successfully develop first dual wavelength difference frequency terahertz quanta cascade laser
Device, but due to second order nonlinear coefficient in practice there is no 106pm/V, in infrared multimode lasing, modal phase mismatch, it is outer
Too short etc. reasons of coupling length cause the difference frequency terahertz quantum cascade laser to be not carried out ambient operation and output power
Only nanowatt magnitude, by thickness of improvement doping and ducting layer etc., only with one-year age, the group is achieved that difference frequency terahertz
The ambient operation of quantum cascade laser, but room temperature output power is still less than 1 μ W.Until Karun in 2012
Vijayraghavan et al. by the way of based on Cerenkov phase matched, in the transfer efficiency of infrared-Terahertz mentioned
Height, delivery efficiency are also improved, the difference frequency terahertz quantum cascade laser hereafter based on Cerenkov phase matched mode
It rapidly develops.It is up to currently based on the Terahertz light source pulse peak power of dual wavelength difference frequency quantum cascade laser
1.9mW is the active area structure combination Cerenkov that monophone sub-resonance is used by Northwestern Univ USA's M.Razeghi group in 2015
Phase matched scheme obtains, but its outer coupling efficiency is also only 15%, and room temperature is continuously only microwatt magnitude.By in InP
Substrate, which is glued silicon strip or extracted terahertz light in the long range of entire chamber using surface two-grade grating, can be improved outer coupling efficiency,
But the former substrate still cannot be thinned, device thermal diffusivity is bad, is unfavorable for realizing continuous operation, the latter far field is in ridge wide direction
Diverging still can be larger.It is had reached currently based on emitting quantum cascade laser single-mode output infrared in annular chamber
400mW improves far field diverging, this patent based on the small advantage of annular chamber far-field divergence angle in order to improve outer coupling efficiency simultaneously
It proposes the effective extraction for realizing terahertz light using annular chamber surface launching mechanism while improving the diverging of its far field.
Summary of the invention
The various problems for causing the outer coupling efficiency of terahertz light lower in summary, this patent propose a kind of annular Cavity surface
The preparation method for emitting difference frequency terahertz quantum cascade laser can be improved its outer coupling efficiency and realize the effective of terahertz light
It extracts.Structure single mode infrared first in upper ducting layer production first-order optical grating is realized, it is double to do circlewise ridged for epitaxial wafer
Ditch structure extracts on the face that substrate production realizes terahertz light for the secondary surface metal grating of terahertz light, makes simultaneously
The far-field divergence angle of device reduces.
The present invention provides a kind of preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser, including as follows
Step:
Step 1: lower waveguide layer, lower optical confinement layer, the first active layer, wall, second are sequentially grown on a substrate
Active layer, upper optical confinement layer and upper ducting layer；
Step 2: ducting layer in removal, it is radial on upper optical confinement layer to etch a plurality of grating downwards, form one
The circular grating of binary cycle；
Step 3: regrow upper ducting layer on upper optical confinement layer after etching；
Step 4: etching an annular ridge structure downwards on upper ducting layer, etching depth reaches lower optical confinement layer；
Step 5: semi-insulating InP:Fe is filled up in the groove of annular ridge structure after etching；
Step 6: evaporation front metal electrode in the annular ridge structure of semi-insulating InP:Fe is filled up in the trench, it is gold-plated；
Step 7: by substrate thinning, polishing evaporates back metal electrode at the back side of substrate；
Step 8: etched backside metal electrode prepares second level annular surface metal grating, completes preparation.
The beneficial effects of the present invention are:
1, terahertz light is extracted in substrate surface production second level metal grating using annular chamber, it can be along entire chamber
Terahertz light is extracted in face can effectively improve outer coupling efficiency.
2, substrate is avoided using production second level metal grating structure on substrate and polishes 20-30 ° of angle bring substrate not
Device heat dissipation problem caused by capable of being thinned, the heat dissipation for being conducive to device mutually compatible with device inverse bonding technique improve the continuous function of room temperature
Rate, while improving device and being dissipated in the far field of ridge wide direction.
Detailed description of the invention
Feature and effect in order to further illustrate the present invention do more into one the present invention below with reference to examples and drawings
The explanation of step, in which:
Fig. 1 is preparation flow figure of the invention；
Fig. 2 is structural schematic diagram of the invention.
Specific embodiment
As shown in Figs.1 and 2, the present invention provides a kind of annular chamber surface launching difference frequency terahertz quantum cascade laser
Preparation method, include the following steps:
Step 1: sequentially grown on a substrate 1 lower waveguide layer 2, lower optical confinement layer 3, the first active layer 4, wall 5,
Second active layer 6, upper optical confinement layer 7 and upper ducting layer 8, the material of the substrate 1 are the semi-insulating InP of n-type doping, institute
The material for the lower waveguide layer 2 stated is the InGaAs of n-type doping, and the material of the lower light limiting layer 3 is the InP of n-type doping, institute
The first active layer 4 and the second active layer 6 stated are made of the InGaAs/InAlAs Quantum Well in 20-40 period, this is first active
Layer 4 and the corresponding wavelength of the second active layer 6 are 7-11 μm, and the material of the wall 5 is the InGaAs of n-type doping, described
The material of upper optical confinement layer 7 is the InGaAs of n-type doping, and the material of the upper ducting layer 8 is the InP of n-type doping.；
Step 2: ducting layer 8 in removal, it is radial on upper optical confinement layer 7 to etch a plurality of grating, preparation one downwards
A structure circular grating with binary cycle, the circular grating of the binary cycle are in order to purify wavelength infrared in two, in turn
The THz wave that single mode can be obtained, compared with vertical bar type, theoretically two middle infrared waves do not have chamber in annular optical grating construction
Area loss, threshold current density is lower, can reduce power consumption；
Step 3: regrow upper ducting layer 8 on upper optical confinement layer 7 after etching, forms the optical grating construction,
The material of optical grating construction is InGaAs/InP, which has level-one distributed feedback structure, two periods point of the grating
The not other wavelength combination first-order optical grating formula as corresponding to two active layers: λ=2neffΛIt determines, the material of the upper ducting layer 8
For the InP of n-type doping；
Step 4: etching an annular ridge structure downwards on upper ducting layer 8, etching depth reaches lower optical confinement layer 3；
Step 5: semi-insulating InP:Fe is filled up in the groove of annular ridge structure after etching, filling up semi-insulating InP:Fe is
In order to which device can preferably radiate；
Step 6: filling up evaporation front metal electrode 9 in the annular ridge structure of semi-insulating InP:Fe, gold-plated, plating in the trench
Gold is the heat dissipation characteristics in order to further improve device；
Step 7: substrate 1 being thinned, is polished, evaporates back metal electrode 10 at the back side of substrate 1, substrate 1, which is thinned, also to be had
Conducive to the heat dissipation of device；
Step 8: etching metal electrode prepares second level annular metal grating, the second level annular metal grating is by gold
Category/air composition, which is Ti/Au, and the period of the second level annular metal grating is by formula:Λg=λTHz/(nInP·cos
θc) determine, λTHzFor Terahertz wavelength, nInPRefractive index for THz wave in substrate, θcFor Cerenkov radiation angle, system is completed
It is standby.The purpose for preparing the two-grade grating is to realize that the substrate of Terahertz goes out light.
Compared with existing difference frequency terahertz quantum cascade laser source, the present invention is had the advantage that
One, substrate goes out light, does not influence the thinned of device, polishing and inverse bonding technique, is conducive to the heat dissipation of device；And it adopts at present
The device of 20 ° of -30 ° of light extraction modes is polished with substrate in order to which the more terahertz light substrates of coupling as outer as possible not will do it generally
It is thinned, seriously hinders the heat dissipation of device, be unfavorable for the raising of device performance.Structure of the present invention it is possible to prevente effectively from
This problem.
Two, surface two-grade grating can extract terahertz light along entire device architecture, and terahertz light is with Cerenkov circular cone
To external radiation, the light for extracting only 50% from one side can be collected, and consider further that the coupling efficiency of two-grade grating is 80%-
90%, theoretically the outer coupling efficiency of terahertz light can reach 40%-45%；And current difference frequency terahertz quantum cascade laser
Outer coupling efficiency too it is low be also cause its output power lower one of reason, [Lu Q, Razeghi reported at present
M.Recent advances in room temperature, high-power terahertz quantum cascade
laser sources based on difference-frequency generation[C]/
Photonics.Multidisciplinary Digital Publishing Institute, 2016,3 (3): 42.] highest
The pulse power peak value of difference frequency terahertz quantum cascade laser is 1.9mW, and room temperature continuous power is 14 μ W, but described in it
Outer coupling efficiency is also only 15%.In terms of international development trend, everybody accepts difference frequency terahertz quanta cascade substantially at present
Laser is that thz laser Material Field 1THz frequencies above uniquely being capable of the continuously adjustable electric pump semiconductor of working and room temperature
THz source, so any its outer coupling efficiency and the structure of output power of can be improved all is worth studied.The present invention provides
Structural theory on the outer coupling efficiency of terahertz light can be improved to 40%-45%, terahertz light can be effectively improved
Photoelectric conversion efficiency.
Three, what annular light-emitting window in surface of the present invention can be done is wider much larger than Terahertz wavelength, such one side Terahertz
Wave will not be leaked from two sides, on the other hand can be improved the far field diverging of device, be improved the beam quality of terahertz light.
So far, attached drawing comparative illustration advantage of the invention is had been combined.According to above description, those skilled in the art are answered
When having clear understanding to a kind of annular chamber surface launching difference frequency terahertz quantum cascade laser structure of the present invention.
To the purpose of the present invention, technical solution and have according to structure of the invention described in claims, and below
Beneficial effect has been further described, it should be understood that being only of the invention substantially real described in following claims
Example is applied, is not intended to restrict the invention, all within the spirits and principles of the present invention, any modification for being made equally is replaced
It changes, improve, should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser, includes the following steps:
Step 1: lower waveguide layer, lower optical confinement layer, the first active layer, wall, second active is sequentially grown on a substrate
Layer, upper optical confinement layer and upper ducting layer；
Step 2: ducting layer in removal, it is radial on upper optical confinement layer to etch a plurality of grating downwards, form a double week
The circular grating of phase；
Step 3: regrow upper ducting layer on upper optical confinement layer after etching；
Step 4: etching an annular ridge structure downwards on upper ducting layer, etching depth reaches lower optical confinement layer；
Step 5: semi-insulating InP:Fe is filled up in the groove of annular ridge structure after etching；
Step 6: evaporation front metal electrode in the annular ridge structure of semi-insulating InP:Fe is filled up in the trench, it is gold-plated；
Step 7: by substrate thinning, polishing evaporates back metal electrode at the back side of substrate；
Step 8: etched backside metal electrode prepares second level annular surface metal grating, completes preparation.
2. the preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser according to claim 1, wherein institute
The material for the substrate stated is semi-insulating InP.
3. the preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser according to claim 1, wherein institute
The material for the lower waveguide layer stated is the InGaAs of n-type doping.
4. the preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser according to claim 1, wherein institute
The material for the lower optical confinement layer stated is the InP of n-type doping.
5. the preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser according to claim 1, wherein institute
The first active layer and the second active layer stated are made of the InGaAs/InAlAs Quantum Well in 20-40 period, first active layer
Wavelength corresponding with the second active layer is 7-11 μm.
6. the preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser according to claim 1, wherein institute
The material for stating wall is the InGaAs of n-type doping.
7. the preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser according to claim 1, wherein institute
The material for the upper optical confinement layer (7) stated is the InGaAs of n-type doping, described to prepare on upper optical confinement layer (7)
Optical grating construction be InGaAs/InP, the optical grating construction have level-one distributed feedback structure.
8. the preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser according to claim 1, wherein institute
The material for the upper ducting layer stated is the InP of n-type doping；The material of the front metal electrode is Au/Ge/Ni/Au.
9. the preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser according to claim 1, wherein institute
The material for the back metal electrode stated is Ti/Au.
10. the preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser according to claim 1, wherein institute
The second level annular metal grating stated is made of metal/air, which is Ti/Au, the period of the second level annular metal grating
By formula: Λg=λTHz/(nInP·cosθc) determine, wherein λTHzFor Terahertz wavelength, nInPFor THz wave substrate refraction
Rate, θcFor Cerenkov radiation angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710472687.2A CN107069432B (en) | 2017-06-20 | 2017-06-20 | The preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710472687.2A CN107069432B (en) | 2017-06-20 | 2017-06-20 | The preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107069432A CN107069432A (en) | 2017-08-18 |
| CN107069432B true CN107069432B (en) | 2019-02-15 |
Family
ID=59595324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710472687.2A Active CN107069432B (en) | 2017-06-20 | 2017-06-20 | The preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107069432B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6981820B2 (en) * | 2017-09-06 | 2021-12-17 | 浜松ホトニクス株式会社 | Manufacturing method of quantum cascade laser light source |
| CN108923258B (en) * | 2018-07-12 | 2020-11-03 | 华南师范大学 | Design method of trap type double-phonon active region energy level structure in terahertz quantum cascade laser |
| CN111106533A (en) * | 2019-12-21 | 2020-05-05 | 江西德瑞光电技术有限责任公司 | VCSEL chip and manufacturing method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5274720A (en) * | 1991-08-22 | 1993-12-28 | Olympus Optical Co., Ltd. | Optical system having a ring-shaped waveguide |
| CN102025110B (en) * | 2009-09-09 | 2012-03-28 | 中国科学院半导体研究所 | Inclined cavity surface two-dimensional photonic crystal distribution feedback quantum cascade laser and preparation method |
| CN102545056B (en) * | 2012-02-02 | 2013-12-18 | 中国科学院上海微系统与信息技术研究所 | Surface-emitting terahertz quantum cascade laser and manufacturing method thereof |
| CN103532008B (en) * | 2013-10-23 | 2016-04-20 | 中国科学院半导体研究所 | A kind of low divergence distributed feedback quanta cascaded laser structure and manufacture method |
| CN103532013B (en) * | 2013-10-23 | 2015-12-30 | 中国科学院半导体研究所 | A kind of emitting quantum cascade laser structure of low divergence |
| JP2017050308A (en) * | 2015-08-31 | 2017-03-09 | 浜松ホトニクス株式会社 | Quantum cascade laser |
-
2017
- 2017-06-20 CN CN201710472687.2A patent/CN107069432B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN107069432A (en) | 2017-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107069432B (en) | The preparation method of annular chamber surface launching difference frequency terahertz quantum cascade laser | |
| CN103633559B (en) | The semi-conductor Terahertz vertical surface emitting laser of superpower low divergence | |
| CN102718180A (en) | Concentric ring core nano silicon micro-disk micro-cavity device and preparation method thereof | |
| CN105305229B (en) | The integrated silicon-based laser of high coupling efficiency electrical pumping | |
| CN110441859B (en) | Two-dimensional hexagonal boron nitride photonic crystal heterostructure with optical wave unidirectional transmission | |
| CN105680319B (en) | High brightness semiconductor laser based on modal gain loss regulation and control | |
| CN103532008B (en) | A kind of low divergence distributed feedback quanta cascaded laser structure and manufacture method | |
| CN105428983A (en) | Passive mode-locked laser based on black phosphorus optical saturation absorber | |
| CN106067656B (en) | A kind of Terahertz quantum cascaded image intensifer and preparation method thereof | |
| CN109378707A (en) | A kind of silicon substrate tunable laser | |
| CN109361149A (en) | A kind of silicon substrate tunable laser | |
| CN108054634B (en) | Narrow linewidth semiconductor laser | |
| CN104538481B (en) | InGaAs/QWIP Two-color Infrared Detectors and preparation method thereof | |
| CN109256671B (en) | Method for realizing soliton mode-locked fiber laser based on graphene and tin disulfide composite film | |
| CN109560460A (en) | A kind of large aperture high light beam quality microlaser | |
| CN101714744B (en) | Non-annular cavity type semiconductor laser | |
| CN104577706B (en) | A kind of quantum cascade laser structure of efficiently lateral heat conduction and preparation method thereof | |
| CN1710763A (en) | Optical pump high-power vertical external cavity emitting laser | |
| CN103715607B (en) | A kind of tunable substrate emission quantum cascade laser array device | |
| CN110231679B (en) | Elliptical photonic crystal heterostructure for realizing unidirectional high transmission of light waves | |
| CN104104010B (en) | Non- collar plate shape cavity semiconductor laser with wavelength selection grating | |
| CN204290028U (en) | Based on the practical saturable absorption device of two-dimensional layer material | |
| CN107749565B (en) | Si-based vertical cavity surface emitting chip | |
| CN105098591A (en) | Continuous wave self-Raman laser of wavelength-locked LD resonance pumping | |
| CN114665382A (en) | High-efficiency heat-dissipation deep-etching double-channel ridge quantum cascade laser and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |