CN101714744B - Non-annular cavity type semiconductor laser - Google Patents
Non-annular cavity type semiconductor laser Download PDFInfo
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- CN101714744B CN101714744B CN2009102178864A CN200910217886A CN101714744B CN 101714744 B CN101714744 B CN 101714744B CN 2009102178864 A CN2009102178864 A CN 2009102178864A CN 200910217886 A CN200910217886 A CN 200910217886A CN 101714744 B CN101714744 B CN 101714744B
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Abstract
The invention provides a non-annular cavity type semiconductor laser, adopting a non-annular cavity and comprising an upper electrode (8), an upper waveguide layer (9), an active gain region (10), a lower waveguide layer (11), a substrate (12) and a lower electrode (13) which are all non-annular and sequentially connected. The lower electrode (13) of the non-annular cavity type semiconductor laser is formed by welding solder on a copper heat sink, Compared with a non-circular dick cavity type semiconductor laser, the non-annular resonance cavity not only keeps optical orientation output, but also improves the current injection rate by more than 20%, decreases the lasing threshold of a laser device by more than 20%, improves the electro-optic conversion efficiency of the device by 15-20%, improves the optical output rate by 10-15% and overcomes the defects of the conventional structure. The laser can be applied to a semiconductor material system of an III-V group or a semiconductor material system of an II-VI group and can be also applied to organic fluorescent or laser material systems.
Description
Technical field
The invention belongs to field of semiconductor lasers, relate to non-annular cavity type semiconductor laser.
Background technology
Collar plate shape (little) cavity semiconductor laser is one of most active research topic of current optoelectronic areas, compare with edge-emission semiconductor laser, the collar plate shape cavity semiconductor laser has high-quality-factor, low lasing threshold and be easy to the planar technique preparation and advantage such as two-dimentional light is integrated, therefore have a wide range of applications at aspects such as optical communication, light interconnection and light are integrated, caused people's very big interest; The shortcoming of collar plate shape cavity semiconductor laser is that light output does not have certain directivity, and 360 degree angles have along the disk border.The dish-type cavity semiconductor laser of non-circle then is the emerging representative of this class dish-type cavity semiconductor laser, has directional light output with it, higher Output optical power, good beam quality and be easy to the integrated characteristics of light and be with a wide range of applications in fields such as laser communication, laser acquisition, basic research, medical treatment, the characteristics that are easy to the preparation of semiconductor device planar technique of device make device also have simple for production, low cost and other advantages simultaneously, and the prospect of researching and developing is widely arranged.Cavity resonator structure in the dish-type cavity semiconductor laser of existing non-circle generally adopts ellipse, positive square etc., and emerging
The type structure.The inventor has delivered on " Applied Physics Letters " the 94th phase 251101-1 page or leaf (APPLIEDPHYSICS LETTERS 94,2511012009) of publishing in June, 2009
Type structurally associated device experimental result of study.The dish-type cavity semiconductor laser structure of this non-circle as shown in Figure 1, 2, comprising: top electrode 1, go up ducting layer 2, active gain district 3, lower waveguide layer 4, substrate 5, bottom electrode 6, the bottom electrode 6 of device by scolder be welded to copper heat sink on; The external boundary 7 in the dish-type chamber of non-circle is by polar equation
Expression, R
0Be the characteristic radius size, ε is the deformation factor, ε=0.40.Device injects under the energisation mode at electric current works.The advantage of this non-disk cavity resonator structure is that device is worked under whispering gallery mode, and device can be realized directionality light output, and device making technics is easy, cheapness etc.But owing to adopted this non-collar plate shape cavity configuration, will all carry out electric current to whole dish-type zone and inject, and the whispering gallery mode of light is only advanced near the edge of dish, the electric current of disk center's part is to not contribution of the gain of light; So, will increase the lasing threshold of Laser Devices, reduce the electric light transformation efficiency of Laser Devices, increase the device temperature rise, reduce the optical output power of device.Therefore need a kind of better cavity resonator structure.
Summary of the invention
In order to solve the problem that prior art exists, for this reason, the present invention proposes a kind of non-annular cavity type semiconductor laser.
A kind of non-annular cavity type semiconductor laser of the present invention is made of the top electrode that is non-annular that connects in turn, last ducting layer, active gain district, lower waveguide layer, substrate and bottom electrode; The bottom electrode of described non-annular cavity type semiconductor laser by scolder be welded to copper heat sink on;
The cavity of non-annular cavity type can form with mask wet etching or reactive ion etching method; The external boundary of non-annular cavity type is by polar equation
Expression, the R in the formula
1Be outer characteristic radius, it is of a size of one to 100 times of order magnitude range of non-annular cavity type semiconductor laser emission wavelength, and ε is the deformation factor, ε=0.35-0.45; The inner boundary of non-annular cavity type is by polar equation
Expression, the R in the formula
2Be interior characteristic radius size, its size is less than the outer characteristic radius R of external boundary
1Size; ε is the deformation factor, ε=0.35-0.45; The axial symmetry center of inner and outer boundary overlaps, inner and outer boundary R
1-R
2Difference be that three to five times of non-annular cavity type semiconductor laser emission wavelength are to external boundary R
1/ 2nd of a characteristic radius size.
Non-annular cavity type semiconductor laser injects energisation mode work with electric current.Electric current passes through non-circular ring type electrode, upward ducting layer is injected with the source gain district, electronics and hole are carried out compound, or electronics from high level to the low-lying level transition, produce stimulated emission, last ducting layer and lower waveguide layer play restriction to light in vertical direction, and laser is from the external boundary outgoing of non-annular cavity type.
Described non-annular cavity type semiconductor laser can also be filled insulating heat-conduction material and be played thermolysis in the inner boundary of non-annular cavity type, as aluminium nitride AlN.
The inner boundary of the non-annular cavity type of described non-annular cavity type semiconductor laser can also be circular.
Beneficial effect: a kind of non-annular cavity type semiconductor laser of the present invention, adopt non-annular cavity type, this non-annular resonant cavity is when guaranteeing to realize the directed output of light, compare raising electric current injection efficiency with the dish-type cavity semiconductor laser of non-circle more than 20%, the lasing threshold that reduces Laser Devices is more than 20%, improve the device electro-optical transformation efficiency at 15-20%, improve optical output power, overcome the deficiency of existing structure at 10-15%.A kind of non-annular cavity type semiconductor laser of the present invention can be applied to III-V family semiconductor material system, also can be applied to II-VI family semiconductor material system, can also be applied in organic light emission, laser material system.
Description of drawings
Fig. 1 is non-collar plate shape
Die cavity semiconductor laser structure schematic diagram front view.
Fig. 2 is non-collar plate shape
Die cavity semiconductor laser structure schematic diagram vertical view.
Fig. 3 is a non-annular cavity type semiconductor laser structural representation front view.
Fig. 4 is a non-annular cavity type semiconductor laser structural representation vertical view.
Fig. 5 is that the non-annular cavity type inner boundary is the semiconductor laser structure schematic diagram vertical view of circle.
Embodiment
As shown in Figure 3-4, the top electrode 8 of non-annular cavity type is a gold electrode, upward ducting layer 9 is that InP and bottom electrode 13 be gold electrode for InGaAs/InAlAs quantum well cascade structure, lower waveguide layer 11 for InGaAsP, substrate 12 for InGaAsP, active gain district 10, the outer characteristic size R of non-annular cavity type external boundary 14
1Radius is 100 microns, and the deformation factor is 0.4,10 microns of the emission wavelengths of device, the interior characteristic size R of non-annular cavity type inner boundary 15
2Be 70 microns, the deformation factor is 0.4.Adopt reactive ion etching or wet etching to form annular chamber, the inside and outside degree of depth of the ring that etching forms is identical, expose active gain district 10, corrodes lower waveguide layer 11, near substrate 12.The bottom electrode 13 of described non-annular cavity type semiconductor laser by scolder be welded to copper heat sink on.
In the inner boundary 15 of non-annular cavity type semiconductor laser, fill insulating heat-conduction material AlN; Other is identical with embodiment 1.
The top electrode 8 of non-annular cavity type is a gold electrode, upward ducting layer 9 is that InP and bottom electrode 13 be gold electrode for InGaAs/InAlAs quantum well cascade structure, lower waveguide layer 11 for InGaAsP, substrate 12 for InGaAsP, active gain district 10, the outer characteristic size R of non-annular cavity type external boundary 14
1Radius is 100 microns, and the deformation factor is 0.4, and 10 microns of the emission wavelengths of device, non-annular cavity type inner boundary 23 are circular, and as shown in Figure 5, its radius size is 70 microns, and the deformation factor is 0.4.Adopt reactive ion etching or wet etching to form annular chamber, the inside and outside degree of depth of the ring that etching forms is identical, expose active gain district 10, corrodes lower waveguide layer 11, near substrate 12.The bottom electrode 13 of described non-annular cavity type semiconductor laser by scolder be welded to copper heat sink on.
In the circular inner boundary 23 of non-annular cavity type semiconductor laser, fill insulating heat-conduction material AlN; Other is identical with embodiment 3.
Claims (1)
1. non-annular cavity type semiconductor laser is characterized in that, is made of the top electrode that is non-annular (8) that connects in turn, last ducting layer (9), active gain district (10), lower waveguide layer (11), substrate (12) and bottom electrode (13); The bottom electrode of described non-annular cavity type semiconductor laser (13) by scolder be welded to copper heat sink on;
The external boundary of non-annular cavity type (14) is by polar equation
Expression, the R in the formula
1Be outer characteristic radius, it is of a size of one to 100 times of order magnitude range of non-annular cavity type semiconductor laser emission wavelength, and ε is the deformation factor, ε=0.35-0.45; The inner boundary of non-annular cavity type (15) is by polar equation
Expression, the R in the formula
2Be interior characteristic radius size, its size is less than the outer characteristic radius R of external boundary (14)
1Size; ε is the deformation factor, ε=0.35-0.45; The axial symmetry center of inner and outer boundary overlaps, inner and outer boundary poor
)For three to five times of non-annular cavity type semiconductor laser emission wavelength to external boundary R
1/ 2nd of a characteristic radius size.
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| CN2009102178864A CN101714744B (en) | 2009-11-20 | 2009-11-20 | Non-annular cavity type semiconductor laser |
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| CN101714744B true CN101714744B (en) | 2011-04-20 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102810813A (en) * | 2011-06-02 | 2012-12-05 | 长春理工大学 | Semiconductor laser with elliptical ring cavity |
| CN102412502B (en) * | 2011-11-24 | 2013-06-12 | 电子科技大学 | High-power semiconductor ring laser |
| CN104377546B (en) * | 2014-12-08 | 2018-03-20 | 长春理工大学 | Oval ring chamber micro-cavity laser with high resistance area |
| CN105790069A (en) * | 2015-07-08 | 2016-07-20 | 长春理工大学 | Semiconductor laser with elliptic annular window |
| CN109449758B (en) * | 2018-09-29 | 2020-01-21 | 中国科学院半导体研究所 | High-power low-coherence laser light source directly used for display |
| CN111952839B (en) * | 2020-08-21 | 2022-07-19 | 中国科学院半导体研究所 | Semiconductor laser device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1185238A (en) * | 1995-05-25 | 1998-06-17 | 西北大学 | Microcavity semiconductor laser |
| JP2002141603A (en) * | 2000-11-01 | 2002-05-17 | Ricoh Co Ltd | Semiconductor laser and semiconductor laser array, and method for fabricating the same, transmission module, local area network system, optical data link system and optical interconnection system |
| JP2007005836A (en) * | 2006-10-11 | 2007-01-11 | Advanced Telecommunication Research Institute International | Semiconductor laser |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1185238A (en) * | 1995-05-25 | 1998-06-17 | 西北大学 | Microcavity semiconductor laser |
| JP2002141603A (en) * | 2000-11-01 | 2002-05-17 | Ricoh Co Ltd | Semiconductor laser and semiconductor laser array, and method for fabricating the same, transmission module, local area network system, optical data link system and optical interconnection system |
| JP2007005836A (en) * | 2006-10-11 | 2007-01-11 | Advanced Telecommunication Research Institute International | Semiconductor laser |
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