CN105790069A - Semiconductor laser with elliptic annular window - Google Patents
Semiconductor laser with elliptic annular window Download PDFInfo
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- CN105790069A CN105790069A CN201510396482.1A CN201510396482A CN105790069A CN 105790069 A CN105790069 A CN 105790069A CN 201510396482 A CN201510396482 A CN 201510396482A CN 105790069 A CN105790069 A CN 105790069A
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Abstract
A traditional vertical cavity surface emission semiconductor laser is in a completely symmetric round shape, output light of the laser is round symmetric light beams, the light beams are not hollow and is in an instable polarization state. The invention provides a semiconductor laser with an elliptic annular window. The structure is shown as figures: the elliptic annular window 1, an upper electrode 2, an ohmic contact layer 3, an upper distributed Bragg reflection mirror 4, an oxide limitation layer 5, a semiconductor material active gain layer 6, a lower distributed Bragg reflection mirror 7, a substrate 8 and a lower electrode 9, the overall structure from the elliptic annular window to the active gain layer is an elliptic cylindrical structure, the ratio selection range between the length of a long shaft and the length of a short shaft of the elliptic structure is 3:2 to 5:4, a central region of the elliptic cylindrical structure is hollow, and an elliptic etching region 10 formed by etching is etched from the ohmic contact layer to the upper distributed Bragg reflection mirror. The semiconductor laser works in an electric pumping mode, elliptic hollow light beams can be emitted under the effect of the elliptic annular window, the emitted elliptic hollow light beams have favorable polarization characteristics, and the polarization is in a stable state.
Description
Technical field
The invention belongs to field of semiconductor lasers, be specifically related to a kind of oval ring Window Semiconductor Lasers.
Background technology
Just energy and the carrier of information, observe at us and play an important role with exploring in the world always.The birth of nineteen sixty laser imparts again the light source that mankind's intensity is high, recognizes for us and utilizes light to start brand-new situation.The formation of laser beam and transmission research are always up the main direction of studying of laser field.In recent years, along with the development of laser technology, a kind of have the novel laser beam that central light strength is zero and gradually form, and develops into special light beam family, hollow laser beam.Hollow laser beam is a kind of central light strength in the propagation direction is the annular beam of zero, in other words, axial intensity be zero light beam be called " hollow beam " or " dark hollow beam ".Series of novel that hollow laser beam has and far-reaching physical attribute, as the studied personnel just gradually such as bread cast light distribution, helicon front, the unusual vortex in center, non-diffraction beam recognize, develop and utilize；These characteristics make hollow laser beam have its unique application in laser trapping with cooling, optical tweezers, the micro-manipulation of optics, Bose-Einstein condensates, optical measurement, calculating holography etc.；Hollow beam, as laser catheter, optical tweezers (light pincers) and optical wrench, has become the powerful realizing microcosmic particle (such as micron particle, nanoparticle and biological cell etc.) accurate manipulation and control at present；Meanwhile, the application of hollow beam also there is a need to the field of the light beam of polarization state ellipsometry distribution, this ellipsometry hollow beam has special focus characteristics, and this characteristic has application widely in guiding and trapped particle, electronics in accelerating high resolution microscope, Metal Cutting, high density storage etc..
The method generally producing hollow laser is utilize one piece of double cone prism to create a branch of hollow beam with double gauss radial intensity distribution on the basis of Gaussian beam, its Beam Transformation principle is: after a Gaussian beam is by first summit refraction of prism, be the hollow beam dispersed by beam splitting；After the second time refraction of prism, produce a branch of approximately parallel bagel annular hollow beam from the other end；Additionally can also produce hollow beam with hollow optic fibre, adopt the experimental provision of micron-scale hollow optical fiber to produce a kind bagel hollow beam；But the method usual optical pathway system of the above tradition hollow laser of generation is extremely complex, manufacture difficulty is big, volume is big, laser pumping mode is also complicated.The system producing oval hollow beam is more complicated, it is usually predominantly and passes through indirect method, method such as optical beam transformation, it is deformed, by known circular hollow light beam, the oval hollow beam obtained through astigmatism, obtained through inclination and distortion by traditional circular hollow light beam, or utilize prism to produce oval hollow Gaussian beam, so the light path complexity of total system is just further increased, manufacture difficulty also increases simultaneously, volume becomes big, can not forming the LASER Light Source directly producing oval hollow beam, the stability of system is also poor.
Vertical cavity surface emitting laser is a kind of Semiconductor Laser, the advantages such as the volume with semiconductor laser is little, efficiency is high, electric pump mode is easy, and there is vertical surface compared with edge-emission semiconductor laser and go out the feature of ray laser, output circular symmetrical beam, and with optical coupling efficiency advantages of higher；Conventional vertical-cavity surface emitting laser structure is as shown in Figure 1: light-emitting window, upper electrode, ohmic contact layer, upper distribution Bragg reflector, oxide confining layer, active gain district, lower distribution Bragg reflector, substrate, bottom electrode, from light-emitting window to the quasiconductor in active gain district generally cylindrical structural；Individual laser package welding time, bottom electrode by solder be welded to heat sink on, in order to improve the radiating effect of device further, it is possible to bottom electrode and heat sink between addition fin, be generally metallized diamond heat sink.The light beam of this structure vertical cavity surface emitting lasers is circle symmetrical Gaussian shape, laser generation output is formed owing to device center region also has electric current to inject, therefore hollow laser beam can not be produced, can not constitute and directly constitute the laser instrument producing oval hollow beam, it is thus desirable to one more preferably semiconductor laser structure, thus form the semiconductor laser that can directly produce oval hollow beam.
Summary of the invention
Oval hollow laser beam can not be directly produced in order to solve prior art, and prior-art devices is complicated, manufacture difficulty is big, volume is big, laser pumping mode is complicated, stablize the problems such as poor, have the advantage of round symmetric figure light beam in conjunction with vertical cavity surface emitting laser, the present invention proposes a kind of oval ring Window Semiconductor Lasers.One has oval ring Window Semiconductor Lasers as shown in Figure 2, including: oval ring window, upper electrode, ohmic contact layer, upper distribution Bragg reflector, oxide confining layer, semi-conducting material active gain layer, lower distribution Bragg reflector, substrate, bottom electrode, from oval ring window to the quasiconductor in active gain district generally elliptical cylinder-shape structure；Electric insulation layer is had between the outer abutment wall and upper electrode of elliptical cylinder-shape structure；Elliptical cylinder-shape architectural feature also reside in the central area of elliptical cylinder-shape structure be hollow by the oval etched area that formed of etching, etch from ohmic contact layer to upper distribution Bragg reflector；The edge of etched area is that hydrion injects the high resistance area, edge formed；Being active increasing layer below etched area, this part active increasing layer is to be injected, by hydrion, the oval high resistance area formed, and high resistance area is from active layer upper surface to its surface lower；It is further characterized in that elliptical cylinder-shape structure, oval ring light-emitting window, oval etched area and oval high resistance area are concentrics, and the ratio selection range of corresponding long axis length and minor axis length is 3:2 to 5:4.The edge of the edge of upper electrode and high resistance area, edge, etched area constitutes oval ring light-emitting window, as shown in Figure 3.
The invention has the beneficial effects as follows: during a kind of oval ring Window Semiconductor Lasers work, electric current is from upper electrode injection, through ohmic contact layer, upper distribution Bragg reflector, oxide current limiting layer enters semiconductor active region, owing to the existence electric current of device center district etch layer and high resistance area can only produce stimulated emission in the oval ring structure that the ovallized column with high resistance area with device is formed, form disc waveguide structure, and upper, go up down the resonator cavity formation laser generation that distribution Bragg reflector is formed, oval hollow laser beam output is formed from upper distribution Bragg reflector outgoing.In oval ring structure, long axis length is 3:2 to 5:4 with the ratio span of minor axis length；When the ratio of long axis length and minor axis length is more than 3:2, difficulty focusing can be caused；When the ratio of long axis length and minor axis length is less than 5:4, causing the elliptical polarization DeGrain of formation, polarization stability is poor simultaneously.By regulate cylindroid size, device center ellipse etched area, oval high resistance area size can produce the oval hollow laser beam of the different oval skin dark stain size of hollow beam, width of light beam, beam radius, annular beam width, to meet the needs of practical application.Meanwhile, a kind of oval ring Window Semiconductor Lasers, this semiconductor laser is owing to forming oval ring etched area in elliptical cylinder-shape structure centre district by etching, and formed high resistance area, edge in edge by hydrion injection, prevent electric current to edge-diffusion, the leakage of injection current is advantageously reduced compared with not processing, it is simultaneously also beneficial to reduce due to the etching abutment wall optical scattering losses caused such as coarse, reduce the threshold current of device more than 20%, improve the electro-optical efficiency of device more than 20%；Etched area by ohmic contact layer until upper distribution Bragg reflector, it is possible to form effective oval ring fiber waveguide；Active increasing layer segment below etched area is injected the oval high resistance area formed by hydrion, make injection current can not enter active area center, laser generation can not be formed in central area, thus creating effective oval ring hollow laser beam, to meet the needs widely of practical application, have that producing method is direct, manufacturing process is simple, volume is little, pumping is easy, reproducible, it is easy to the advantages such as popularization.By at the outer addition electric insulation layer such as silicon dioxide between abutment wall and upper electrode of elliptical cylinder-shape structure in upper electrode, so go up the lead-in wire of electrode by can on the side of elliptical cylinder-shape structure rather than the upper electrode in elliptical cylinder-shape structure, decrease the elliptical cylinder-shape structure caused in contact conductor impaired due to mechanical shock, and the device lattice damage thus caused and performance degradation, so improve device yield and stability more than 50%.
Accompanying drawing explanation
Fig. 1 is conventional vertical-cavity surface emitting laser structure.
Fig. 2 is that one of the present invention has oval ring Window Semiconductor Lasers outside side view.
Fig. 3 is the top view of Fig. 2.
Beneficial effect
During a kind of oval ring Window Semiconductor Lasers work, electric current is from upper electrode injection, semiconductor active region is entered through ohmic contact layer, upper distribution Bragg reflector, oxide current limiting layer, owing to the existence electric current of device center district etch layer and high resistance area can only produce stimulated emission in the oval ring structure that the ovallized column with high resistance area with device is formed, form disc waveguide structure, and the resonator cavity that distribution Bragg reflector is formed on upper and lower forms laser generation, form oval hollow laser beam output from upper distribution Bragg reflector outgoing.In oval ring structure, long axis length is 3:2 to 5:4 with the ratio selection range of minor axis length；When the ratio of long axis length and minor axis length is more than 3:2, difficulty focusing can be caused；When the ratio of long axis length and minor axis length is less than 5:4, causing the elliptical polarization DeGrain of formation, polarization stability is poor simultaneously.By regulate cylindroid size, device center ellipse etched area, oval high resistance area size can produce the oval hollow laser beam of the different oval skin dark stain size of hollow beam, width of light beam, beam radius, annular beam width, to meet the needs of practical application.Meanwhile, a kind of oval ring Window Semiconductor Lasers, this semiconductor laser is owing to forming oval ring etched area in elliptical cylinder-shape structure centre district by etching, and formed high resistance area, edge in edge by hydrion injection, prevent electric current to edge-diffusion, the leakage of injection current is advantageously reduced compared with not processing, it is simultaneously also beneficial to reduce due to the etching abutment wall optical scattering losses caused such as coarse, reduce the threshold current of device more than 20%, improve the electro-optical efficiency of device more than 20%；Etched area by ohmic contact layer until upper distribution Bragg reflector, it is possible to form effective oval ring fiber waveguide；Active increasing layer segment below etched area is injected the oval high resistance area formed by hydrion, make injection current can not enter active area center, laser generation can not be formed in central area, thus creating effective oval ring hollow laser beam, to meet the needs widely of practical application, have that producing method is direct, manufacturing process is simple, volume is little, pumping is easy, reproducible, it is easy to the advantages such as popularization.By at the outer addition electric insulation layer such as silicon dioxide between abutment wall and upper electrode of elliptical cylinder-shape structure in upper electrode, so go up the lead-in wire of electrode by can on the side of elliptical cylinder-shape structure rather than the upper electrode in elliptical cylinder-shape structure, decrease the elliptical cylinder-shape structure caused in contact conductor impaired due to mechanical shock, and the device lattice damage thus caused and performance degradation, so improve device yield and stability more than 50%.
Detailed description of the invention
A kind of oval ring Window Semiconductor Lasers of the present invention includes: oval ring window-1, upper electrode-2 are Ti/Pt/Au, ohmic contact layer-3 is GaAs, upper distribution Bragg reflector-4 is P type 25 cycle Al0.1Ga0.9As/Al0.8Ga0.2As, oxide confining layer-5 are Al2O3, the AlGaAs layer that oxide confining layer is by Al component 0.98 is formed by wet oxidation method, and width is 3-5 micron, active gain district-6 is GaAs/Al0.2Ga0.8As quantum well region, lower distribution Bragg reflector-7 are N-type 40 cycle Al0.1Ga0.9As/Al0.8Ga0.2As, substrate-8 are GaAs, bottom electrode-9 is Au/Ge/Ni, from light-emitting window to the quasiconductor in active gain district generally elliptical cylinder-shape structure, and major axis 120 microns, 90 microns of short axle；It is further characterized in that and adopts in the central area of elliptical cylinder-shape structure dry etching or wet etching technique to form oval etched area-10, its major axis is 90 microns, short axle is 60 microns, the high resistance area-11 formed is injected by hydrion at the edge of oval etched area, width is 3 microns, it is injected, by hydrion, the oval high resistance area-12 formed below oval etched area, its major axis is 90 microns, short axle is 60 microns, and on high resistance area, the lower surface of distribution Bragg reflector layer is up to active layer；Electric insulation layer-13 is had for SiO between elliptical cylinder-shape structure and upper electrode2；The oval ring light-emitting window that the edge of upper electrode is annular with the outward flange composition of etched area, as shown in Figure 3.
It should be noted that the above-mentioned definition to each element is not limited in various concrete material, structure or the shape mentioned in embodiment, those of ordinary skill in the art can replace while it is known simply.
Claims (3)
1. an oval ring Window Semiconductor Lasers, it is characterized in that oval ring window, upper electrode, ohmic contact layer, upper distribution Bragg reflector, oxide confining layer, semi-conducting material active gain layer, lower distribution Bragg reflector, substrate, bottom electrode, from oval ring window to the quasiconductor in active gain district generally elliptical cylinder-shape structure, between the outer abutment wall and upper electrode of elliptical cylinder-shape structure, there is electric insulation layer.
2. an oval ring Window Semiconductor Lasers, its architectural feature is in that the central area of elliptical cylinder-shape structure is hollow, the oval etched area formed by etching, etching is from ohmic contact layer to upper distribution Bragg reflector, the edge of etched area is that hydrion injects the high resistance area, edge formed, and high resistance area is from active layer upper surface to its surface lower.
3. an oval ring Window Semiconductor Lasers, it is further characterized in that elliptical cylinder-shape structure, oval ring light-emitting window, oval etched area and oval high resistance area are concentrics, and long axis length is 3:2 to 5:4 with the ratio span of minor axis length in oval structure, the edge of the edge of upper electrode and high resistance area, edge, etched area constitutes oval ring light-emitting window.
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| JP2018113360A (en) * | 2017-01-12 | 2018-07-19 | ローム株式会社 | Surface emitting laser element and optical device |
| CN108333283A (en) * | 2017-01-20 | 2018-07-27 | 中国科学院上海微系统与信息技术研究所 | A kind of microfluidic chromatography column and preparation method thereof containing streamlined oval micro-pillar array |
| CN108832483A (en) * | 2018-06-27 | 2018-11-16 | 潍坊华光光电子有限公司 | A kind of preparation method of ridged semiconductor laser diode |
| CN111029903A (en) * | 2019-12-25 | 2020-04-17 | 长春理工大学 | Vertical cavity surface emitting semiconductor laser capable of realizing asymmetric trapping of particles |
| CN111224319A (en) * | 2020-01-20 | 2020-06-02 | 常州纵慧芯光半导体科技有限公司 | Vertical cavity surface emitting laser with hollow light emitting region, and manufacturing method and application thereof |
| CN111279563A (en) * | 2017-09-18 | 2020-06-12 | 菲尼萨公司 | VCSEL with elliptical aperture with reduced RIN |
| WO2021003643A1 (en) * | 2019-07-08 | 2021-01-14 | Xiamen Sanan Integrated Circuit Co., Ltd. | Vertical-cavity surface-emitting laser device |
| CN108666867B (en) * | 2018-07-31 | 2023-05-05 | 西安工业大学 | Laser for outputting hollow light beam and manufacturing method thereof |
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| CN108832483A (en) * | 2018-06-27 | 2018-11-16 | 潍坊华光光电子有限公司 | A kind of preparation method of ridged semiconductor laser diode |
| CN108666867B (en) * | 2018-07-31 | 2023-05-05 | 西安工业大学 | Laser for outputting hollow light beam and manufacturing method thereof |
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| CN111029903A (en) * | 2019-12-25 | 2020-04-17 | 长春理工大学 | Vertical cavity surface emitting semiconductor laser capable of realizing asymmetric trapping of particles |
| CN111224319A (en) * | 2020-01-20 | 2020-06-02 | 常州纵慧芯光半导体科技有限公司 | Vertical cavity surface emitting laser with hollow light emitting region, and manufacturing method and application thereof |
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